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Chirag Gupta - Publications

Affiliations: 
2013- Electrical & Computer Engineering University of California, Santa Barbara, Santa Barbara, CA, United States 
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33 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2020 Pasayat SS, Gupta C, Wang Y, DenBaars SP, Nakamura S, Keller S, Mishra UK. Compliant Micron-Sized Patterned InGaN Pseudo-Substrates Utilizing Porous GaN. Materials (Basel, Switzerland). 13. PMID 31947918 DOI: 10.3390/Ma13010213  0.622
2020 Raj A, Krishna A, Hatui N, Gupta C, Jang R, Keller S, Mishra UK. Demonstration of a GaN/AlGaN Superlattice-Based p-Channel FinFET With High ON-Current Ieee Electron Device Letters. 41: 220-223. DOI: 10.1109/Led.2019.2963428  0.786
2020 Hatui N, Krishna A, Li H, Gupta C, Romanczyk B, Acker-James D, Ahmadi E, Keller S, Mishra UK. Ultra-high silicon doped N-polar GaN contact layers grown by metal-organic chemical vapor deposition Semiconductor Science and Technology. 35: 95002. DOI: 10.1088/1361-6641/Ab9727  0.798
2020 Li W, Pasayat SS, Guidry M, Romanczyk B, Zheng X, Gupta C, Hatui N, Keller S, Mishra UK. First experimental demonstration and analysis of electrical transport characteristics of a GaN-based HEMT with a relaxed InGaN channel Semiconductor Science and Technology. 35: 75007. DOI: 10.1088/1361-6641/Ab860A  0.792
2020 Pasayat SS, Hatui N, Li W, Gupta C, Nakamura S, Denbaars SP, Keller S, Mishra UK. Method of growing elastically relaxed crack-free AlGaN on GaN as substrates for ultra-wide bandgap devices using porous GaN Applied Physics Letters. 117: 62102. DOI: 10.1063/5.0017948  0.381
2020 Pasayat SS, Ley R, Gupta C, Wong MS, Lynsky C, Wang Y, Gordon MJ, Nakamura S, Denbaars SP, Keller S, Mishra UK. Color-tunable <10 μm square InGaN micro-LEDs on compliant GaN-on-porous-GaN pseudo-substrates Applied Physics Letters. 117: 61105. DOI: 10.1063/5.0011203  0.438
2020 Pasayat SS, Gupta C, Wong MS, Wang Y, Nakamura S, Denbaars SP, Keller S, Mishra UK. Growth of strain-relaxed InGaN on micrometer-sized patterned compliant GaN pseudo-substrates Applied Physics Letters. 116: 111101. DOI: 10.1063/5.0001480  0.46
2020 Liu W, Sayed I, Gupta C, Li H, Keller S, Mishra U. An improved methodology for extracting interface state density at Si3N4/GaN Applied Physics Letters. 116: 22104. DOI: 10.1063/1.5125645  0.641
2019 Sayed I, Liu W, Chan S, Gupta C, Li H, Keller S, Mishra UK. Flatband voltage stability and time to failure of MOCVD-grown SiO 2 and Si 3 N 4 dielectrics on N-polar GaN Applied Physics Express. 12: 121001. DOI: 10.7567/1882-0786/Ab4D39  0.793
2019 Gupta C, Tsukada Y, Romanczyk B, Pasayat SS, James D, Ahmadi E, Keller S, Mishra UK. First demonstration of improvement in hole conductivity in c-plane III-Nitrides through application of uniaxial strain Japanese Journal of Applied Physics. 58: 30908. DOI: 10.7567/1347-4065/Aaffaa  0.762
2019 Pasayat SS, Gupta C, Acker-James D, Cohen DA, DenBaars SP, Nakamura S, Keller S, Mishra UK, Fellow I. Fabrication of relaxed InGaN pseudo-substrates composed of micron-sized pattern arrays with high fill factors using porous GaN Semiconductor Science and Technology. 34: 115020. DOI: 10.1088/1361-6641/Ab4372  0.348
2019 Pasayat SS, Ahmadi E, Romanczyk B, Koksaldi O, Agarwal A, Guidry M, Gupta C, Wurm C, Keller S, Mishra UK. First demonstration of RF N-polar GaN MIS-HEMTs grown on bulk GaN using PAMBE Semiconductor Science and Technology. 34: 45009. DOI: 10.1088/1361-6641/Ab0761  0.774
2019 Sayed I, Liu W, Chan S, Gupta C, Guidry M, Li H, Keller S, Mishra U. Net negative fixed interface charge for Si3N4 and SiO2 grown in situ on 000-1 N-polar GaN Applied Physics Letters. 115: 32103. DOI: 10.1063/1.5111148  0.821
2019 Gupta C, Chan SH, Pasayat SS, Keller S, Mishra UK. Reverse breakdown studies of GaN MOSCAPs and their implications in vertical GaN power devices Journal of Applied Physics. 125: 124101. DOI: 10.1063/1.5082652  0.771
2018 Chan SH, Bisi D, Tahhan M, Gupta C, DenBaars SP, Keller S, Zanoni E, Mishra UK. Comparing electrical characteristics of in situ and ex situ Al2O3/GaN interfaces formed by metalorganic chemical vapor deposition Applied Physics Express. 11: 41002. DOI: 10.7567/Apex.11.041002  0.791
2018 Ji D, Li W, Agarwal A, Chan SH, Haller J, Bisi D, Labrecque M, Gupta C, Cruse B, Lal R, Keller S, Mishra UK, Chowdhury S. Improved Dynamic RON of GaN Vertical Trench MOSFETs (OG-FETs) Using TMAH Wet Etch Ieee Electron Device Letters. 39: 1030-1033. DOI: 10.1109/Led.2018.2843335  0.776
2018 Ji D, Gupta C, Agarwal A, Chan SH, Lund C, Li W, Keller S, Mishra UK, Chowdhury S. Large-Area In-Situ Oxide, GaN Interlayer-Based Vertical Trench MOSFET (OG-FET) Ieee Electron Device Letters. 39: 711-714. DOI: 10.1109/Led.2018.2813312  0.795
2018 Gupta C, Lund C, Chan SH, Agarwal A, Liu J, Enatsu Y, Keller S, Mishra UK. Corrections to “In Situ Oxide, GaN Interlayer-Based Vertical Trench MOSFET (OG-FET) on Bulk GaN Substrates’ [Mar 17 353-355] Ieee Electron Device Letters. 39: 316-316. DOI: 10.1109/Led.2017.2788598  0.784
2017 Agarwal A, Gupta C, Alhassan A, Mates T, Keller S, Mishra U. Abrupt GaN/p-GaN:Mg junctions grown via metalorganic chemical vapor deposition Applied Physics Express. 10: 111002. DOI: 10.7567/Apex.10.111002  0.782
2017 Gupta C, Chan SH, Agarwal A, Hatui N, Keller S, Mishra UK. First Demonstration of AlSiO as Gate Dielectric in GaN FETs; Applied to a High Performance OG-FET Ieee Electron Device Letters. 38: 1575-1578. DOI: 10.1109/Led.2017.2756926  0.835
2017 Gupta C, Ji D, Chan SH, Agarwal A, Leach W, Keller S, Chowdhury S, Mishra UK. Impact of Trench Dimensions on the Device Performance of GaN Vertical Trench MOSFETs Ieee Electron Device Letters. 38: 1559-1562. DOI: 10.1109/Led.2017.2749540  0.808
2017 Gupta C, Lund C, Chan SH, Agarwal A, Liu J, Enatsu Y, Keller S, Mishra UK. In Situ Oxide, GaN Interlayer-Based Vertical Trench MOSFET (OG-FET) on Bulk GaN substrates Ieee Electron Device Letters. 38: 353-355. DOI: 10.1109/Led.2017.2649599  0.824
2017 Enatsu Y, Gupta C, Keller S, Nakamura S, Mishra UK. P–n junction diodes with polarization induced p-type graded InxGa1–xN layer Semiconductor Science and Technology. 32: 105013. DOI: 10.1088/1361-6641/Aa89D7  0.437
2017 Agarwal A, Koksaldi O, Gupta C, Keller S, Mishra UK. Maskless regrowth of GaN for trenched devices by MOCVD Applied Physics Letters. 111: 233507. DOI: 10.1063/1.5003257  0.794
2017 Chan SH, Keller S, Koksaldi OS, Gupta C, DenBaars SP, Mishra UK. Exploring metalorganic chemical vapor deposition of Si-alloyed Al2O3 dielectrics using disilane Journal of Crystal Growth. 464: 54-58. DOI: 10.1016/J.Jcrysgro.2016.11.096  0.786
2016 Chan SH, Tahhan M, Liu X, Bisi D, Gupta C, Koksaldi O, Li H, Mates T, DenBaars SP, Keller S, Mishra UK. Metalorganic chemical vapor deposition and characterization of (Al,Si)O dielectrics for GaN-based devices Japanese Journal of Applied Physics. 55. DOI: 10.7567/Jjap.55.021501  0.763
2016 Gupta C, Chan SH, Lund C, Agarwal A, Koksaldi OS, Liu J, Enatsu Y, Keller S, Mishra UK. Comparing electrical performance of GaN trench-gate MOSFETs with a-plane and m-plane sidewall channels Applied Physics Express. 9: 121001. DOI: 10.7567/Apex.9.121001  0.759
2016 Enatsu Y, Gupta C, Laurent M, Keller S, Nakamura S, Mishra UK. Polarization induced three-dimensional hole gas in compositionally graded In x Ga1− x N layer Applied Physics Express. 9: 75502. DOI: 10.7567/Apex.9.075502  0.754
2016 Gupta C, Chan SH, Enatsu Y, Agarwal A, Keller S, Mishra UK. OG-FET: An In-Situ ${O}$ xide, ${G}$ aN Interlayer-Based Vertical Trench MOSFET Ieee Electron Device Letters. 37: 1601-1604. DOI: 10.1109/Led.2016.2616508  0.823
2016 Gupta C, Chan SH, Enatsu Y, Agarwal A, Keller S, Mishra UK. A novel device design to lower the on-resistance in GaN trench MOSFETs Device Research Conference - Conference Digest, Drc. 2016. DOI: 10.1109/DRC.2016.7548466  0.771
2016 Agarwal A, Gupta C, Enatsu Y, Keller S, Mishra U. Controlled low Si doping and high breakdown voltages in GaN on sapphire grown by MOCVD Semiconductor Science and Technology. 31: 125018. DOI: 10.1088/0268-1242/31/12/125018  0.813
2016 Gupta C, Enatsu Y, Gupta G, Keller S, Mishra UK. High breakdown voltage p-n diodes on GaN on sapphire by MOCVD Physica Status Solidi (a) Applications and Materials Science. DOI: 10.1002/Pssa.201532554  0.759
2012 Arora VK, Tan MLP, Gupta C. High-field transport in a graphene nanolayer Journal of Applied Physics. 112: 114330. DOI: 10.1063/1.4769300  0.316
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