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K. J. Chang - Publications

Affiliations: 
Physics Korea Advanced Institute of Science and Technology, Daejeon, South Korea 
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Year Citation  Score
2020 Jiang Z, Lou W, Liu Y, Li Y, Song H, Chang K, Duan W, Zhang S. Spin-Triplet Excitonic Insulator: The Case of Semihydrogenated Graphene. Physical Review Letters. 124: 166401. PMID 32383949 DOI: 10.1103/Physrevlett.124.166401  0.502
2019 Cheong BH, Chang KJ. Metastability and chemical bonding of s-induced defects in GaAs and InP. Physical Review Letters. 71: 4354-4357. PMID 10055225 DOI: 10.1103/Physrevlett.71.4354  0.329
2019 Vohra YK, Brister KE, Desgreniers S, Ruoff AL, Chang KJ, Cohen ML. Phase transition studies of germanium to 1.25 Mbar. Physical Review Letters. 56: 1944-1947. PMID 10032817 DOI: 10.1103/Physrevlett.56.1944  0.463
2019 Chang KJ, Dacorogna MM, Cohen ML, Mignot JM, Chouteau G, Martinez G. Superconductivity in high-pressure metallic phases of Si. Physical Review Letters. 54: 2375-2378. PMID 10031324 DOI: 10.1103/Physrevlett.54.2375  0.48
2019 Park CH, Cheong BH, Lee KH, Chang KJ. Structural and electronic properties of cubic, 2H, 4H, and 6H SiC. Physical Review. B, Condensed Matter. 49: 4485-4493. PMID 10011368 DOI: 10.1103/Physrevb.49.4485  0.368
2019 Lee KH, Chang KJ. First-principles study of the optical properties and the dielectric response of Al. Physical Review. B, Condensed Matter. 49: 2362-2367. PMID 10011070 DOI: 10.1103/Physrevb.49.2362  0.307
2019 Park CH, Lee IH, Chang KJ. Efficient modified Jacobi relaxation for minimizing the energy functional. Physical Review. B, Condensed Matter. 47: 15996-15999. PMID 10006010 DOI: 10.1103/Physrevb.47.15996  0.303
2019 Cheong BH, Chang KJ. First-principles study of the atomic structure and local vibrational modes of the DX center in GaAs under pressure. Physical Review. B, Condensed Matter. 46: 13131-13135. PMID 10003352 DOI: 10.1103/Physrevb.46.13131  0.367
2019 Cheong BH, Chang KJ, Cohen ML. Pressure dependences of band gaps and optical-phonon frequency in cubic SiC. Physical Review. B, Condensed Matter. 44: 1053-1056. PMID 9999610 DOI: 10.1103/Physrevb.44.1053  0.431
2019 Lee IH, Chang KJ. Atomic and electronic structure of amorphous Si from first-principles molecular-dynamics simulations. Physical Review. B, Condensed Matter. 50: 18083-18089. PMID 9976239 DOI: 10.1103/Physrevb.50.18083  0.346
2019 Liu AY, Chang KJ, Cohen ML. Theory of electronic, vibrational, and superconducting properties of fcc silicon. Physical Review. B, Condensed Matter. 37: 6344-6348. PMID 9943875 DOI: 10.1103/Physrevb.37.6344  0.514
2019 Chang KJ, Cohen ML. Ab initio pseudopotential study of structural and high-pressure properties of SiC. Physical Review. B, Condensed Matter. 35: 8196-8201. PMID 9941157 DOI: 10.1103/Physrevb.35.8196  0.493
2019 Fahy S, Chang KJ, Louie SG, Cohen ML. Pressure coefficients of band gaps of diamond. Physical Review. B, Condensed Matter. 35: 5856-5859. PMID 9940800 DOI: 10.1103/Physrevb.35.5856  0.581
2019 Chang KJ, Cohen ML. Electron-phonon interactions and superconductivity in Si, Ge, and Sn. Physical Review. B, Condensed Matter. 34: 4552-4557. PMID 9940244 DOI: 10.1103/Physrevb.34.4552  0.494
2019 Wentzcovitch RM, Chang KJ, Cohen ML. Electronic and structural properties of BN and BP. Physical Review. B, Condensed Matter. 34: 1071-1079. PMID 9939723 DOI: 10.1103/Physrevb.34.1071  0.655
2019 Chang KJ, Cohen ML. First-principles study of the structural properties of Ge. Physical Review. B, Condensed Matter. 34: 8581-8590. PMID 9939576 DOI: 10.1103/Physrevb.34.8581  0.479
2019 Chang KJ, Cohen ML. Structural stability of phases of black phosphorus. Physical Review. B, Condensed Matter. 33: 6177-6186. PMID 9939166 DOI: 10.1103/Physrevb.33.6177  0.475
2019 Chang KJ, Cohen ML. Rhombohedral phase stability of the group-VA elements. Physical Review. B, Condensed Matter. 33: 7371-7374. PMID 9938096 DOI: 10.1103/Physrevb.33.7371  0.449
2019 Dacorogna MM, Chang KJ, Cohen ML. Pressure increase of the electron-phonon interaction in superconducting hexagonal silicon. Physical Review. B, Condensed Matter. 32: 1853-1855. PMID 9937240 DOI: 10.1103/Physrevb.32.1853  0.484
2019 Chang KJ, Cohen ML. Solid-solid phase transitions and soft phonon modes in highly condensed Si. Physical Review. B, Condensed Matter. 31: 7819-7826. PMID 9935725 DOI: 10.1103/Physrevb.31.7819  0.454
2019 Kim G, Sung H, Han WH, Lee I, Chang KJ. Self-Encapsulation of Silicene in Cubic Diamond Si: Topological Semimetal in Covalent Bonding Networks Journal of Physical Chemistry C. 123: 1839-1845. DOI: 10.1021/Acs.Jpcc.8B10475  0.358
2018 Chang JS, Kim S, Sung HJ, Yeon J, Chang KJ, Li X, Kim S. Graphene Nanoribbons with Atomically Sharp Edges Produced by AFM Induced Self-Folding. Small (Weinheim An Der Bergstrasse, Germany). e1803386. PMID 30307700 DOI: 10.1002/Smll.201803386  0.499
2018 Sung HJ, Han WH, Lee IH, Chang KJ. Superconducting Open-Framework Allotrope of Silicon at Ambient Pressure. Physical Review Letters. 120: 157001. PMID 29756903 DOI: 10.1103/Physrevlett.120.157001  0.342
2018 Kim M, Kim S, Song D, Oh S, Chang KJ, Cho E. Promotion of electrochemical oxygen evolution reaction by chemical coupling of cobalt to molybdenum carbide Applied Catalysis B: Environmental. 227: 340-348. DOI: 10.1016/J.Apcatb.2018.01.051  0.463
2017 Han W, Kim S, Lee IH, Chang KJ. Prediction of Green Phosphorus with Tunable Direct Band Gap and High Mobility. The Journal of Physical Chemistry Letters. PMID 28889743 DOI: 10.1021/Acs.Jpclett.7B02153  0.531
2017 Kim S, Han WH, Lee IH, Chang KJ. Boron Triangular Kagome Lattice with Half-Metallic Ferromagnetism. Scientific Reports. 7: 7279. PMID 28779140 DOI: 10.1038/S41598-017-07518-9  0.527
2017 Kim S, Song S, Park J, Yu HS, Cho S, Kim D, Baik J, Choe DH, Chang KJ, Lee YH, Kim SW, Yang H. Long-Range Lattice Engineering of MoTe2 by 2D Electride. Nano Letters. PMID 28488868 DOI: 10.1021/Acs.Nanolett.6B05199  0.783
2017 Han WH, Oh YJ, Choe D, Kim S, Lee I, Chang KJ. Three-dimensional buckled honeycomb boron lattice with vacancies as an intermediate phase on the transition pathway from α-B to γ-B Npg Asia Materials. 9. DOI: 10.1038/Am.2017.98  0.779
2017 Sung H, Kim S, Lee I, Chang KJ. Semimetallic carbon allotrope with a topological nodal line in mixed sp2-sp3 bonding networks Npg Asia Materials. 9: e361-e361. DOI: 10.1038/Am.2017.26  0.517
2016 Sung HJ, Choe DH, Chang KJ. Tuning Dirac points by strain in MoX2 nanoribbons (X = S, Se, Te) with a 1T' structure. Physical Chemistry Chemical Physics : Pccp. PMID 27257641 DOI: 10.1039/C6Cp02204A  0.767
2016 Choe DH, Sung HJ, Chang KJ. Understanding topological phase transition in monolayer transition metal dichalcogenides Physical Review B - Condensed Matter and Materials Physics. 93. DOI: 10.1103/Physrevb.93.125109  0.765
2016 Oh YJ, Kim S, Lee IH, Lee J, Chang KJ. Direct band gap carbon superlattices with efficient optical transition Physical Review B - Condensed Matter and Materials Physics. 93. DOI: 10.1103/Physrevb.93.085201  0.516
2016 Han WH, Chang KJ. Subgap States near the Conduction-Band Edge Due to Undercoordinated Cations in Amorphous In-Ga-Zn-O and Zn-Sn-O Semiconductors Physical Review Applied. 6: 44011. DOI: 10.1103/Physrevapplied.6.044011  0.324
2016 Kim GM, Oh YJ, Chang KJ. The effect of Al segregation on Schottky barrier height and effective work function in TiAl/TiN/HfO2 gate stacks Journal of Physics D: Applied Physics. 49. DOI: 10.1088/0022-3727/49/27/275104  0.316
2016 Pratidhina EFN, Kim S, Chang KJ. Design of Dipole-Allowed Direct Band Gaps in Ge/Sn Core–Shell Nanowires Journal of Physical Chemistry C. 120: 28169-28175. DOI: 10.1021/Acs.Jpcc.6B08779  0.506
2015 Oh YJ, Noh HK, Chang KJ. The effects of electric field and gate bias pulse on the migration and stability of ionized oxygen vacancies in amorphous In-Ga-Zn-O thin film transistors. Science and Technology of Advanced Materials. 16: 034902. PMID 27877799 DOI: 10.1088/1468-6996/16/3/034902  0.738
2015 Oh YJ, Lee IH, Kim S, Lee J, Chang KJ. Dipole-allowed direct band gap silicon superlattices. Scientific Reports. 5: 18086. PMID 26656482 DOI: 10.1038/Srep18086  0.556
2015 Cho S, Kim S, Kim JH, Zhao J, Seok J, Keum DH, Baik J, Choe DH, Chang KJ, Suenaga K, Kim SW, Lee YH, Yang H. DEVICE TECHNOLOGY. Phase patterning for ohmic homojunction contact in MoTe₂. Science (New York, N.Y.). 349: 625-8. PMID 26250680 DOI: 10.1126/Science.Aab3175  0.768
2015 Choe DH, Chang KJ. Universal Conductance Fluctuation in Two-Dimensional Topological Insulators. Scientific Reports. 5: 10997. PMID 26055574 DOI: 10.1038/Srep10997  0.745
2015 Song SH, Kim BH, Choe DH, Kim J, Kim DC, Lee DJ, Kim JM, Chang KJ, Jeon S. Bandgap Widening of Phase Quilted, 2D MoS2 by Oxidative Intercalation. Advanced Materials (Deerfield Beach, Fla.). 27: 3152-8. PMID 25867545 DOI: 10.1002/Adma.201500649  0.752
2015 Keum DH, Cho S, Kim JH, Choe DH, Sung HJ, Kan M, Kang H, Hwang JY, Kim SW, Yang H, Chang KJ, Lee YH. Bandgap opening in few-layered monoclinic MoTe2 Nature Physics. 11: 482-486. DOI: 10.1038/Nphys3314  0.749
2015 Lee IH, Oh YJ, Kim S, Lee J, Chang KJ. Ab initio materials design using conformational space annealing and its application to searching for direct band gap silicon crystals Computer Physics Communications. DOI: 10.1016/J.Cpc.2016.02.011  0.481
2014 Lee AT, Ryu B, Lee IH, Chang KJ. Action-derived molecular dynamics simulations for the migration and coalescence of vacancies in graphene and carbon nanotubes. Journal of Physics. Condensed Matter : An Institute of Physics Journal. 26: 115303. PMID 24590224 DOI: 10.1088/0953-8984/26/11/115303  0.75
2014 Lee I, Lee J, Oh YJ, Kim S, Chang K. Computational search for direct band gap silicon crystals Physical Review B. 90: 115209-115209. DOI: 10.1103/Physrevb.90.115209  0.509
2014 Kim S, Chang K, Park J. Finite-size supercell correction scheme for charged defects in one-dimensional systems Physical Review B. 90: 85435-85435. DOI: 10.1103/Physrevb.90.085435  0.718
2014 Sung HJ, Choe DH, Chang KJ. The effects of surface polarity and dangling bonds on the electronic properties of monolayer and bilayer MoS2on α-quartz New Journal of Physics. 16. DOI: 10.1088/1367-2630/16/11/113055  0.79
2014 Lee CH, Kim GM, Oh YJ, Chang KJ. Suppression of boron segregation by interface Ge atoms at SiGe/SiO2 interface Current Applied Physics. 14: 1557-1563. DOI: 10.1016/J.Cap.2014.08.027  0.364
2013 Park JS, Chang KJ. Site preference of Mg acceptors and improvement of p-type doping efficiency in nitride alloys. Journal of Physics. Condensed Matter : An Institute of Physics Journal. 25: 245801. PMID 23709500 DOI: 10.1088/0953-8984/25/24/245801  0.676
2013 Lee AT, Chang K. Effect of edges on the stability and magnetic interaction of Co atoms embedded in zigzag graphene nanoribbons Physical Review B. 87: 85435. DOI: 10.1103/Physrevb.87.085435  0.637
2013 Oh Y, Lee AT, Noh H, Chang K. Hybrid functional versus quasiparticle calculations for the Schottky barrier and effective work function at TiN/HfO 2 interface Physical Review B. 87: 75325. DOI: 10.1103/Physrevb.87.075325  0.796
2013 Kim GM, Oh YJ, Chang KJ. Effects of interface bonding and defects on boron diffusion at Si/SiO 2 interface Journal of Applied Physics. 114. DOI: 10.1063/1.4844415  0.366
2012 Kim S, Park JS, Chang KJ. Stability and segregation of B and P dopants in Si/SiO2 core-shell nanowires. Nano Letters. 12: 5068-73. PMID 22985080 DOI: 10.1021/Nl3013924  0.727
2012 Choe DH, Chang KJ. Effect of dimensionality on the localization behavior in hydrogenated graphene systems. Nano Letters. 12: 5175-80. PMID 22963004 DOI: 10.1021/Nl302207P  0.753
2012 Park J, Chang KJ. Diffusion and Stability of Hydrogen in Mg-Doped GaN: A Density Functional Study Applied Physics Express. 5: 65601-65601. DOI: 10.1143/Apex.5.065601  0.672
2012 Lee AT, Kang J, Wei S, Chang K, Kim Y. Carrier-mediated long-range ferromagnetism in electron-doped Fe-C4 and Fe-N4 incorporated graphene Physical Review B. 86: 165403-165403. DOI: 10.1103/Physrevb.86.165403  0.755
2012 Lee AT, Kang Y, Chang KJ. Transport Properties of Carbon Nanotubes: Effects of Vacancy Clusters and Disorder Journal of Physical Chemistry C. 116: 1179-1184. DOI: 10.1021/Jp207943U  0.727
2012 Noh HK, Oh YJ, Chang KJ. Effect of O-vacancy defects on the Schottky barrier heights in Ni/SiO 2 and Ni/HfO 2 interfaces Physica B: Condensed Matter. 407: 2907-2910. DOI: 10.1016/J.Physb.2011.08.079  0.749
2012 Oh YJ, Noh HK, Chang KJ. First-principles study of the segregation of boron dopants near the interface between crystalline Si and amorphous SiO 2 Physica B: Condensed Matter. 407: 2989-2992. DOI: 10.1016/J.Physb.2011.08.050  0.749
2011 Jeon H, Lee S, Kang T, Chang K, Yeo YK, George T. Magnetic and Electronic Properties of a Mn Delta-doping GaN Layer Journal of the Korean Physical Society. 58: 1361-1364. DOI: 10.3938/Jkps.58.1361  0.31
2011 Chang KJ, Ryu B, Noh H, Bang J, Choi E. Electronic Structure of O-vacancy in High-k Dielectrics and Oxide Semiconductors Mrs Proceedings. 1370. DOI: 10.1557/Opl.2011.771  0.787
2011 Noh H, Chang K, Ryu B, Lee W. Electronic structure of oxygen-vacancy defects in amorphous In-Ga-Zn-O semiconductors Physical Review B. 84: 115205-115205. DOI: 10.1103/Physrevb.84.115205  0.799
2011 Park J, Ryu B, Chang K. Stability of Donor-Pair Defects in Si1–xGex Alloy Nanowires Journal of Physical Chemistry C. 115: 10345-10350. DOI: 10.1021/Jp111886N  0.797
2011 Tsogbadrakh N, Choi E, Lee W, Chang K. Hole doping effect on ferromagnetism in Mn-doped ZnO nanowires Current Applied Physics. 11: 236-240. DOI: 10.1016/J.Cap.2010.07.014  0.756
2010 Yoon H, Lee AT, Choi EA, Seo K, Bagkar N, Cho J, Jo Y, Chang KJ, Kim B. Structure-induced ferromagnetic stabilization in free-standing hexagonal Fe(1.3)Ge nanowires. Journal of the American Chemical Society. 132: 17447-51. PMID 21087015 DOI: 10.1021/Ja104189P  0.748
2010 Park JS, Ryu B, Moon CY, Chang KJ. Defects responsible for the hole gas in Ge/Si core-shell nanowires. Nano Letters. 10: 116-21. PMID 20017562 DOI: 10.1021/Nl9029972  0.796
2010 Bang J, Chang KJ. Localization and one-parameter scaling in hydrogenated graphene Physical Review B - Condensed Matter and Materials Physics. 81. DOI: 10.1103/Physrevb.81.193412  0.686
2010 Choe DH, Bang J, Chang KJ. Electronic structure and transport properties of hydrogenated graphene and graphene nanoribbons New Journal of Physics. 12. DOI: 10.1088/1367-2630/12/12/125005  0.705
2010 Ryu B, Chang K. Defects responsible for the Fermi level pinning in n+ poly-Si/HfO2 gate stacks Applied Physics Letters. 97: 242910. DOI: 10.1063/1.3527929  0.699
2010 Ryu B, Noh H, Choi E, Chang K. O-vacancy as the origin of negative bias illumination stress instability in amorphous In-Ga-Zn-O thin film transistors Applied Physics Letters. 97: 22108-22108. DOI: 10.1063/1.3464964  0.782
2010 Choi E, Lee W, Chang KJ. Enhanced electron-mediated ferromagnetism in Co-doped ZnO nanowires Journal of Applied Physics. 108: 23904. DOI: 10.1063/1.3463412  0.757
2009 Lee W, Choi E, Bang J, Ryu B, Chang K. First-principles Study of the Electronic Structure of CrystallineInGaO$_{ m 3}$(ZnO)$_{ m 3}$ Journal of the Korean Physical Society. 55: 112-115. DOI: 10.3938/Jkps.55.112  0.76
2009 Lee AT, Kang Y, Chang K, Lee I. Reconstruction and alignment of vacancies in carbon nanotubes Physical Review B. 79: 174105-174105. DOI: 10.1103/Physrevb.79.174105  0.716
2009 Noh H, Ryu B, Choi E, Bang J, Chang KJ. Local bonding effect on the defect states of oxygen vacancy in amorphous HfSiO4 Applied Physics Letters. 95: 082905. DOI: 10.1063/1.3216058  0.794
2009 Bang J, Choi E, Chang KJ. The effect of impurities on hydrogen bonding site and local vibrational frequency in ZnO Journal of Applied Physics. 106: 053522. DOI: 10.1063/1.3213387  0.777
2009 Ryu B, Chang K. The electronic properties of the interface structure between ZnO and amorphous HfO2 Physica B-Condensed Matter. 404: 4823-4826. DOI: 10.1016/J.Physb.2009.08.184  0.718
2009 Lee W-, Ryu B, Chang KJ. Electronic structure of oxygen vacancy in crystalline InGaO3(ZnO)m Physica B-Condensed Matter. 404: 4794-4796. DOI: 10.1016/J.Physb.2009.08.178  0.702
2009 Kang Y, Kim Y, Chang KJ. Electrical transport properties of nanoscale devices based on carbon nanotubes Current Applied Physics. 9. DOI: 10.1016/J.Cap.2008.08.028  0.592
2008 Moon CY, Lee WJ, Chang KJ. Formation of dopant-pair defects and doping efficiency in B- and P-doped silicon nanowires. Nano Letters. 8: 3086-91. PMID 18729413 DOI: 10.1021/Nl8009878  0.574
2008 Lee W, Kang J, Chang KJ. p-type doping and compensation in ZnO Journal of the Korean Physical Society. 53: 196-201. DOI: 10.3938/Jkps.53.196  0.729
2008 Kang J, Kim Y, Bang J, Chang KJ. Direct and defect-assisted electron tunneling through ultrathinSiO2layers from first principles Physical Review B. 77. DOI: 10.1103/Physrevb.77.195321  0.698
2008 Kang J, Bang J, Ryu B, Chang KJ. Effect of atomic-scale defects on the low-energy electronic structure of graphene: Perturbation theory and local-density-functional calculations Physical Review B. 77. DOI: 10.1103/Physrevb.77.115453  0.794
2008 Lee W, Choi E, Bang J, Ryu B, Chang KJ. Structural and electronic properties of crystalline InGaO3(ZnO)m Applied Physics Letters. 93: 111901. DOI: 10.1063/1.2980583  0.786
2007 Lee W, Kang J, Chang KJ. The Origin of p-Type Conductivity in P-Doped ZnO Journal of the Korean Physical Society. 50: 602-607. DOI: 10.3938/Jkps.50.602  0.701
2007 Kang Y, Chang K, Kim Y. First-principles study of the electrical conductance of telescopically aligned carbon nanotubes Physical Review B. 76: 205441. DOI: 10.1103/Physrevb.76.205441  0.587
2007 Bang J, Kang J, Lee W, Chang KJ, Kim H. Chemical bonding effect of Ge atoms on B diffusion in Si Physical Review B. 76. DOI: 10.1103/Physrevb.76.064118  0.778
2007 Choi E, Chang K. Stability of the cubic phase in GaN doped with 3d-transition metal ions Physica B-Condensed Matter. 401: 319-322. DOI: 10.1016/J.Physb.2007.08.177  0.692
2007 Bang J, Kim H, Kang J, Lee W, Chang K. Retardation of boron diffusion in SiGe alloy Physica B-Condensed Matter. 401: 196-199. DOI: 10.1016/J.Physb.2007.08.145  0.775
2007 Kang Y, Kang J, Kim Y, Chang KJ. First-principles approach to the electron transport and applications for devices based on carbon nanotubes and ultrathin oxides Computer Physics Communications. 177: 30-33. DOI: 10.1016/J.Cpc.2007.02.031  0.745
2006 Choi E, Kang J, Chang KJ. Energetics of cubic and hexagonal phases in Mn-dopedGaN: First-principles pseudopotential calculations Physical Review B. 74. DOI: 10.1103/Physrevb.74.245218  0.776
2006 Lee W, Kang J, Chang KJ. Defect properties and p -type doping efficiency in phosphorus-doped ZnO Physical Review B. 73: 24117. DOI: 10.1103/Physrevb.73.024117  0.67
2006 Lee EC, Chang KJ. P-type doping with group-I elements and hydrogenation effect in ZnO Physica B: Condensed Matter. 376: 707-710. DOI: 10.1016/J.Physb.2005.12.177  0.313
2006 Lee WJ, Kang J, Chang K. Electronic structure of phosphorus dopants in ZnO Physica B-Condensed Matter. 376: 699-702. DOI: 10.1016/J.Physb.2005.12.175  0.67
2006 Kang J, Chang KJ. The electronic and magnetic properties of Mn-doped GaN Physica B-Condensed Matter. 376: 635-638. DOI: 10.1016/J.Physb.2005.12.160  0.688
2005 Hong H, Kang Y, Moon C-, Chang KJ, Kim HJ. Tubular form of aluminates with metallic conduction : Density-functional calculations Physical Review B. 72: 205435-205435. DOI: 10.1103/Physrevb.72.205435  0.582
2005 Hong H, Kang Y, Kang J, Lee E, Kim Y, Chang KJ. Effect of chemical bonding on the magnetic stability and magnetic moment in Mn-based binary compounds Physical Review B. 72. DOI: 10.1103/Physrevb.72.144408  0.712
2005 Kang J, Chang K, Katayama-Yoshida H. First-principles study of ferromagnetism in Mn-doped GaN Journal of Superconductivity. 18: 55-60. DOI: 10.1007/S10948-005-2150-Z  0.679
2004 Lee EC, Chang KJ. Possible p-type doping with group-I elements in ZnO Physical Review B - Condensed Matter and Materials Physics. 70. DOI: 10.1103/Physrevb.70.115210  0.317
2004 Lee E, Chang KJ. Ferromagnetic versus antiferromagnetic interaction in Co-doped ZnO Physical Review B. 69: 85205-85205. DOI: 10.1103/Physrevb.69.085205  0.372
2003 Kim YS, Lee EC, Chang KJ. Electrically deactivating nearest-neighbor donor-pair defects in Si. Physical Review Letters. 91: 125503. PMID 14525372 DOI: 10.1103/PhysRevLett.91.125503  0.308
2003 Kim Y, Choi J, Chang KJ, Tománek D. Defective fullerenes and nanotubes as molecular magnets: Anab initiostudy Physical Review B. 68. DOI: 10.1103/Physrevb.68.125420  0.321
2003 Lee H, Sim H, Kim D, Chang K. Towards unified understanding of conductance of stretched monatomic contacts Physical Review B. 68: 75424-75424. DOI: 10.1103/Physrevb.68.075424  0.312
2003 Kang J, Lee E, Chang KJ. First-principles study of the structural phase transformation of hafnia under pressure Physical Review B. 68. DOI: 10.1103/Physrevb.68.054106  0.662
2003 Choi J, Kim Y, Chang KJ, Tománek D. Itinerant ferromagnetism in heterostructured C/BN nanotubes Physical Review B. 67. DOI: 10.1103/Physrevb.67.125421  0.302
2003 Lee EC, Chang KJ. Atomic model for the electrical deactivation of N in Si oxynitrides Physica B: Condensed Matter. 340: 974-977. DOI: 10.1016/J.Physb.2003.09.198  0.334
2002 Lee E, Chang KJ. Electrically inactive nitrogen complex in Si oxynitride Physical Review B. 66: 233205-233205. DOI: 10.1103/Physrevb.66.233205  0.329
2001 Kim D, Sim H, Chang K. Electronic and transport properties of single-wall carbon nanotubes encapsulating fullerene-based structures Physical Review B. 64: 115409-115409. DOI: 10.1103/Physrevb.64.115409  0.3
2001 Sim H, Park C, Chang K. Resonant transport in single-wall armchair carbon nanotubes with local mirror-symmetry-breaking deformations Physical Review B. 63: 73402-73402. DOI: 10.1103/Physrevb.63.073402  0.302
2001 Kim Y, Sim H-, Chang KJ. Electronic structure of collapsed C, BN, and BC3 nanotubes Current Applied Physics. 1: 39-44. DOI: 10.1016/S1567-1739(00)00008-0  0.337
1999 Park C, Kim Y, Chang KJ. Band-gap modification by radial deformation in carbon nanotubes Physical Review B. 60: 10656-10659. DOI: 10.1103/Physrevb.60.10656  0.347
1996 Oh JH, Chang KJ, Ihm G. Electronic structure of In1-xGaxAs/GaAs strained quantum wells with a δ-doped layer Journal of Physics Condensed Matter. 8: 1705-1712. DOI: 10.1088/0953-8984/8/11/014  0.367
1995 Lee KH, Chang KJ, Cohen ML. First-principles calculations of the Coulomb pseudopotential micro*: Application to Al. Physical Review. B, Condensed Matter. 52: 1425-1428. PMID 9981185 DOI: 10.1103/Physrevb.52.1425  0.321
1995 Chang KJ, Cheong B. Structure and Stability of the DX Centers in GaAs and InP Modern Physics Letters B. 9: 511-530. DOI: 10.1142/S0217984995000462  0.359
1994 Lee I, Chang KJ, Lee YH. A tight-binding molecular dynamics study of the equilibrium structures of small Si clusters Journal of Physics: Condensed Matter. 6: 741-750. DOI: 10.1088/0953-8984/6/3/014  0.338
1993 Li WH, Chang KJ, Hsieh WT, Lee KC, Lynn JW, Yang HD. Magnetic ordering of Pr in PrBa2Cu2.7Zn0.3O7-y. Physical Review. B, Condensed Matter. 48: 519-523. PMID 10006802 DOI: 10.1103/Physrevb.48.519  0.304
1993 Park CH, Chang KJ. Structural and electronic properties of GaP-AlP (001) superlattices Physical Review B. 47: 12709-12715. DOI: 10.1103/Physrevb.47.12709  0.372
1992 Park CH, Chang KJ. Structural stability of bulk and epitaxial In0.5Ga0.5P-alloy-based ordered superlattices Physical Review B. 45: 11775-11781. DOI: 10.1103/Physrevb.45.11775  0.35
1992 Chang K, Cheong B, Park C. Atomic Model For Hydrogen Passivation Of Dx Centers In Gaas And Alxga1-Xas Alloys Solid State Communications. 84: 1005-1009. DOI: 10.1016/0038-1098(92)90428-C  0.337
1991 Chang KJ, Cohen ML. Erratum:Ab initiopseudopotential study of structural and high-pressure properties of SiC [Phys. Rev. B 35, 8196(1987)] Physical Review B. 43: 12060-12060. DOI: 10.1103/Physrevb.43.12060  0.428
1991 Hyun K, Lee C, Chang KJ, Jang J. Thermally Induced Metastability In Compensated And Delta-Doped Amorphous-Silicon Philosophical Magazine Part B. 64: 689-696. DOI: 10.1080/13642819108207630  0.34
1991 Cho HY, Kim EK, Min S, Chang KJ, Lee C. Metastable behavior of deep levels in hydrogenated GaAs Applied Physics Letters. 58: 1866-1868. DOI: 10.1063/1.105056  0.351
1991 Park CH, Chang KJ. Electronic pairing mechanism and superconducting gap in high-Tc superconductors Physica C: Superconductivity and Its Applications. 184: 81-87. DOI: 10.1016/0921-4534(91)91503-V  0.337
1991 Chang KJ. Atomic structure of shallow acceptor- and donor-hydrogen complexes in GaAs Solid State Communications. 78: 273-277. DOI: 10.1016/0038-1098(91)90196-3  0.318
1990 Tarnow E, Zhang SB, Chang KJ, Chadi DJ. Peculiar Doping Behavior of Si:Be. Mrs Proceedings. 209: 119. DOI: 10.1557/Proc-209-119  0.304
1990 Cho HY, Kim EK, Min SK, Chang KJ, Lee C. Electric-field-enhanced dissociation of the hydrogen-Si donor complex in GaAs Journal of Applied Physics. 68: 5077-5080. DOI: 10.1063/1.347070  0.329
1988 Chadi D, Chang K. Theory of the atomic and electronic structure of DX centers in GaAs and AlxGa1-xAs alloys. Physical Review Letters. 61: 873-876. PMID 10039452 DOI: 10.1103/Physrevlett.61.873  0.333
1988 Chang KJ, Cohen ML, Penn DR. Electronic correlations and satellites in superconducting oxides. Physical Review. B, Condensed Matter. 38: 8691-8696. PMID 9945644 DOI: 10.1103/Physrevb.38.8691  0.426
1987 Bourne LC, Crommie MF, Zettl A, zur Loye HC, Keller SW, Leary KL, Stacy AM, Chang KJ, Cohen ML, Morris DE. Search for isotope effect in superconducting Y-Ba-Cu-O. Physical Review Letters. 58: 2337-2339. PMID 10034719 DOI: 10.1103/Physrevlett.58.2337  0.403
1987 Bourne LC, Zettl A, Chang KJ, Cohen ML, Stacy AM, Ham WK. Elasticity studies of La2-xSrxCuO4. Physical Review. B, Condensed Matter. 35: 8785-8787. PMID 9941252 DOI: 10.1103/Physrevb.35.8785  0.378
1987 Bourne LC, Crommie MF, Zettl A, Loye HZ, Keller SW, Leary KL, Stacy AM, Chang KJ, Cohen ML, Morris DE. Erratum: Search for isotope effect in superconducting Y-Ba-Cu-O [Phys. Rev. Lett. 58, 2337 (1987)] Physical Review Letters. 59: 1492. DOI: 10.1103/Physrevlett.59.1492  0.408
1986 Erskine D, Yu PY, Chang KJ, Cohen ML. Superconductivity and phase transitions in compressed Si to 45 GPa. Physical Review Letters. 57: 2741-2744. PMID 10033849 DOI: 10.1103/Physrevlett.57.2741  0.45
1986 Martinez G, Mignot JM, Chouteau G, Chang KJ, Dacorogna MM, Cohen ML. Superconductivity Of Silicon Physica Scripta. 1986: 226-229. DOI: 10.1088/0031-8949/1986/T13/037  0.466
1985 Cohen ML, Chang KJ, Dacorogna MM. Theoretical study of superconductivity in highly condensed Si Physica B-Condensed Matter. 135: 229-234. DOI: 10.1016/0378-4363(85)90472-3  0.503
1984 Chang KJ, Cohen ML. Structural and electronic properties of the high-pressure hexagonal phases of Si Physical Review B. 30: 5376-5378. DOI: 10.1103/Physrevb.30.5376  0.528
1984 Chang KJ, Cohen ML. High-Pressure Behavior Of Mgo - Structural And Electronic-Properties Physical Review B. 30: 4774-4781. DOI: 10.1103/Physrevb.30.4774  0.484
1984 Chang KJ, Froyen S, Cohen ML. Pressure coefficients of band gaps in semiconductors Solid State Communications. 50: 105-107. DOI: 10.1016/0038-1098(84)90917-7  0.466
1984 Chang KJ, Cohen ML. Theoretical study of BeO: structural and electronic properties Solid State Communications. 50: 487-491. DOI: 10.1016/0038-1098(84)90313-2  0.496
1983 Chang KJ, Froyen S, Cohen ML. Electronic band structures for zinc-blende and wurtzite CdS Physical Review B. 28: 4736-4743. DOI: 10.1103/Physrevb.28.4736  0.458
1983 Chang K, Froyen S, Cohen M. The electronic band structures for zincblende and wurtzite BeO Journal of Physics C: Solid State Physics. 16: 3475-3480. DOI: 10.1088/0022-3719/16/18/017  0.346
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