| Year |
Citation |
Score |
| 2020 |
Doherty TAS, Winchester AJ, Macpherson S, Johnstone DN, Pareek V, Tennyson EM, Kosar S, Kosasih FU, Anaya M, Abdi-Jalebi M, Andaji-Garmaroudi Z, Wong EL, Madéo J, Chiang YH, Park JS, et al. Performance-limiting nanoscale trap clusters at grain junctions in halide perovskites. Nature. 580: 360-366. PMID 32296189 DOI: 10.1038/S41586-020-2184-1 |
0.36 |
|
| 2020 |
Mannodi-Kanakkithodi A, Park J, Martinson ABF, Chan MKY. Defect Energetics in Pseudo-Cubic Mixed Halide Lead Perovskites from First-Principles The Journal of Physical Chemistry C. 124: 16729-16738. DOI: 10.1021/Acs.Jpcc.0C02486 |
0.418 |
|
| 2019 |
Pastor E, Park JS, Steier L, Kim S, Grätzel M, Durrant JR, Walsh A, Bakulin AA. In situ observation of picosecond polaron self-localisation in α-FeO photoelectrochemical cells. Nature Communications. 10: 3962. PMID 31481691 DOI: 10.1038/S41467-019-11767-9 |
0.41 |
|
| 2019 |
Park J, Kim S, Hood SN, Walsh A. Publisher's Note: “Open-circuit voltage deficit in Cu2ZnSnS4 solar cells by interface bandgap narrowing” [Appl. Phys. Lett. 113, 212103 (2018)] Applied Physics Letters. 114: 259901. DOI: 10.1063/1.5094791 |
0.444 |
|
| 2019 |
Mannodi-Kanakkithodi A, Park J, Jeon N, Cao DH, Gosztola DJ, Martinson ABF, Chan MKY. Comprehensive Computational Study of Partial Lead Substitution in Methylammonium Lead Bromide Chemistry of Materials. 31: 3599-3612. DOI: 10.1021/Acs.Chemmater.8B04017 |
0.375 |
|
| 2018 |
Park J, Jung Y, Butler KT, Walsh A. Quick-start guide for first-principles modelling of semiconductor interfaces Journal of Physics: Energy. 1: 016001. DOI: 10.1088/2515-7655/Aad928 |
0.344 |
|
| 2018 |
Park J, Kim S, Hood SN, Walsh A. Open-circuit voltage deficit in Cu2ZnSnS4 solar cells by interface bandgap narrowing Applied Physics Letters. 113: 212103. DOI: 10.1063/1.5063793 |
0.514 |
|
| 2018 |
Park J, Kim S, Walsh A. Stability and electronic properties of planar defects in quaternary I2-II-IV-VI4 semiconductors Journal of Applied Physics. 124: 165705. DOI: 10.1063/1.5053424 |
0.502 |
|
| 2018 |
Monserrat B, Park J, Kim S, Walsh A. Role of electron-phonon coupling and thermal expansion on band gaps, carrier mobility, and interfacial offsets in kesterite thin-film solar cells Applied Physics Letters. 112: 193903. DOI: 10.1063/1.5028186 |
0.531 |
|
| 2018 |
Park J, Chan MKY. Mechanism of Na accumulation at extended defects in Si from first-principles Journal of Applied Physics. 123: 161560. DOI: 10.1063/1.5003385 |
0.429 |
|
| 2018 |
Kim S, Park J, Walsh A. Correction to “Identification of Killer Defects in Kesterite Thin-Film Solar Cells” Acs Energy Letters. 3: 1077-1077. DOI: 10.1021/Acsenergylett.8B00528 |
0.475 |
|
| 2017 |
Kim DH, Park J, Li Z, Yang M, Park JS, Park IJ, Kim JY, Berry JJ, Rumbles G, Zhu K. 300% Enhancement of Carrier Mobility in Uniaxial-Oriented Perovskite Films Formed by Topotactic-Oriented Attachment. Advanced Materials (Deerfield Beach, Fla.). PMID 28417505 DOI: 10.1002/Adma.201606831 |
0.358 |
|
| 2017 |
Kang J, Park J, Stradins P, Wei S. Nonisovalent Si-III-V and Si-II-VI alloys: Covalent, ionic, and mixed phases Physical Review B. 96. DOI: 10.1103/Physrevb.96.045203 |
0.616 |
|
| 2017 |
Hall GN, Stuckelberger M, Nietzold T, Hartman J, Park J, Werner J, Niesen B, Cummings ML, Rose V, Ballif C, Chan MK, Fenning DP, Bertoni MI. The Role of Water in the Reversible Optoelectronic Degradation of Hybrid Perovskites at Low Pressure The Journal of Physical Chemistry C. 121: 25659-25665. DOI: 10.1021/Acs.Jpcc.7B06402 |
0.301 |
|
| 2016 |
Yang JH, Yin WJ, Park JS, Ma J, Wei SH. Review on first-principles study of defect properties of CdTe as a solar cell absorber Semiconductor Science and Technology. 31. DOI: 10.1088/0268-1242/31/8/083002 |
0.419 |
|
| 2016 |
Park JS, Yang JH, Barnes T, Wei SH. Effect of intermixing at CdS/CdTe interface on defect properties Applied Physics Letters. 109. DOI: 10.1063/1.4959848 |
0.458 |
|
| 2016 |
Park JS, Kang J, Yang JH, McMahon WE, Wei SH. Polymerization of defect states at dislocation cores in InAs Journal of Applied Physics. 119. DOI: 10.1063/1.4940743 |
0.664 |
|
| 2016 |
Li Z, Yang M, Park JS, Wei SH, Berry JJ, Zhu K. Stabilizing Perovskite Structures by Tuning Tolerance Factor: Formation of Formamidinium and Cesium Lead Iodide Solid-State Alloys Chemistry of Materials. 28: 284-292. DOI: 10.1021/Acs.Chemmater.5B04107 |
0.302 |
|
| 2015 |
Park JS, Choi S, Yan Y, Yang Y, Luther JM, Wei SH, Parilla P, Zhu K. Electronic Structure and Optical Properties of α-CH3NH3PbBr3 Perovskite Single Crystal. The Journal of Physical Chemistry Letters. 6: 4304-4308. PMID 26722966 DOI: 10.1021/Acs.Jpclett.5B01699 |
0.334 |
|
| 2015 |
Yang JH, Yin WJ, Park JS, Wei SH. Self-regulation of charged defect compensation and formation energy pinning in semiconductors. Scientific Reports. 5: 16977. PMID 26584670 DOI: 10.1038/srep16977 |
0.346 |
|
| 2015 |
Park JS, Yang JH, Kanevce A, Choi S, Repins IL, Wei SH. Ordering-induced direct-to-indirect band gap transition in multication semiconductor compounds Physical Review B - Condensed Matter and Materials Physics. 91. DOI: 10.1103/Physrevb.91.075204 |
0.304 |
|
| 2015 |
Choi SG, Park JS, Donohue AL, Christensen ST, To B, Beall C, Wei SH, Repins IL. Electronic structure and optical properties of cu2zngese4: First-principles calculations and vacuum-ultraviolet spectroscopic ellipsometric studies Physical Review Applied. 4. DOI: 10.1103/Physrevapplied.4.054006 |
0.34 |
|
| 2015 |
Park JS, Kang J, Yang JH, Metzger W, Wei SH. Stability and electronic structure of the low-Σ grain boundaries in CdTe: A density functional study New Journal of Physics. 17. DOI: 10.1088/1367-2630/17/1/013027 |
0.604 |
|
| 2015 |
Yang JH, Yin WJ, Park JS, Burst J, Metzger WK, Gessert T, Barnes T, Wei SH. Enhanced p-type dopability of P and As in CdTe using non-equilibrium thermal processing Journal of Applied Physics. 118. DOI: 10.1063/1.4926748 |
0.368 |
|
| 2014 |
Yang JH, Park JS, Kang J, Metzger W, Barnes T, Wei SH. Tuning the Fermi level beyond the equilibrium doping limit through quenching: The case of CdTe Physical Review B - Condensed Matter and Materials Physics. 90. DOI: 10.1103/Physrevb.90.245202 |
0.643 |
|
| 2014 |
Kim S, Chang K, Park J. Finite-size supercell correction scheme for charged defects in one-dimensional systems Physical Review B. 90: 85435-85435. DOI: 10.1103/Physrevb.90.085435 |
0.558 |
|
| 2014 |
Park JS, Yang JH, Ramanathan K, Wei SH. Defect properties of Sb- and Bi-doped CuInSe2: The effect of the deep lone-pair s states Applied Physics Letters. 105. DOI: 10.1063/1.4904223 |
0.43 |
|
| 2013 |
Park JS, Chang KJ. Site preference of Mg acceptors and improvement of p-type doping efficiency in nitride alloys. Journal of Physics. Condensed Matter : An Institute of Physics Journal. 25: 245801. PMID 23709500 DOI: 10.1088/0953-8984/25/24/245801 |
0.443 |
|
| 2013 |
Noh H, Park J, Chang KJ. Effect of hydrogen incorporation on the negative bias illumination stress instability in amorphous In-Ga-Zn-O thin-film-transistors Journal of Applied Physics. 113: 63712. DOI: 10.1063/1.4792229 |
0.405 |
|
| 2012 |
Kim S, Park JS, Chang KJ. Stability and segregation of B and P dopants in Si/SiO2 core-shell nanowires. Nano Letters. 12: 5068-73. PMID 22985080 DOI: 10.1021/Nl3013924 |
0.558 |
|
| 2012 |
Park J, Chang KJ. Diffusion and Stability of Hydrogen in Mg-Doped GaN: A Density Functional Study Applied Physics Express. 5: 65601-65601. DOI: 10.1143/Apex.5.065601 |
0.423 |
|
| 2011 |
Park J, Ryu B, Chang K. Stability of Donor-Pair Defects in Si1–xGex Alloy Nanowires Journal of Physical Chemistry C. 115: 10345-10350. DOI: 10.1021/Jp111886N |
0.694 |
|
| 2010 |
Park JS, Ryu B, Moon CY, Chang KJ. Defects responsible for the hole gas in Ge/Si core-shell nanowires. Nano Letters. 10: 116-21. PMID 20017562 DOI: 10.1021/Nl9029972 |
0.692 |
|
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