| Year |
Citation |
Score |
| 2023 |
Cai M, Miao MP, Liang Y, Jiang Z, Liu ZY, Zhang WH, Liao X, Zhu LF, West D, Zhang S, Fu YS. Manipulating single excess electrons in monolayer transition metal dihalide. Nature Communications. 14: 3691. PMID 37344472 DOI: 10.1038/s41467-023-39360-1 |
0.546 |
|
| 2022 |
Besse R, Wang H, West D, Da Silva JLF, Zhang S. Prediction of Effective Photoelectron and Hole Separation in Type-I MoS/PtSe van der Waals Junction. The Journal of Physical Chemistry Letters. 6407-6411. PMID 35802831 DOI: 10.1021/acs.jpclett.2c01526 |
0.561 |
|
| 2021 |
Ciesler M, West D, Zhang S. Ligand-Assisted Charge-Transfer Mechanism: The Case of CdSe/Cysteine/MoS Heterostructures. The Journal of Physical Chemistry Letters. 12329-12335. PMID 34935388 DOI: 10.1021/acs.jpclett.1c03232 |
0.517 |
|
| 2021 |
Han N, Xie W, Zhang J, Liu L, Zhao J, West D, Zhang S. Remote Passivation in Two-Dimensional Materials: The Case of the Monolayer-Bilayer Lateral Junction of MoSe. The Journal of Physical Chemistry Letters. 12: 8046-8052. PMID 34433273 DOI: 10.1021/acs.jpclett.1c02457 |
0.535 |
|
| 2021 |
Ghoshal D, Shang H, Sun X, Wen X, Chen D, Wang T, Lu Z, Gupta T, Efstathiadis H, West D, Koratkar N, Lu TM, Zhang S, Shi SF. Orientation-Controlled Large-Area Epitaxial PbI Thin Films with Tunable Optical Properties. Acs Applied Materials & Interfaces. PMID 34196518 DOI: 10.1021/acsami.1c05734 |
0.475 |
|
| 2021 |
Yang G, Wang R, Ge M, Guo M, Wang J, Ma R, Zhang J, West D, Zhang S. Switchable electronic and enhanced magnetic properties of CrI edges. Physical Chemistry Chemical Physics : Pccp. PMID 33899853 DOI: 10.1039/d0cp06155g |
0.537 |
|
| 2021 |
Qin L, Zhang ZH, Jiang Z, Fan K, Zhang WH, Tang QY, Xia HN, Meng F, Zhang Q, Gu L, West D, Zhang S, Fu YS. Realization of AlSb in the Double-Layer Honeycomb Structure: A Robust Class of Two-Dimensional Material. Acs Nano. PMID 33723991 DOI: 10.1021/acsnano.1c00470 |
0.532 |
|
| 2021 |
Zhang H, Holbrook M, Cheng F, Nam H, Liu M, Pan CR, West D, Zhang S, Chou MY, Shih CK. Epitaxial Growth of Two-Dimensional Insulator Monolayer Honeycomb BeO. Acs Nano. PMID 33481561 DOI: 10.1021/acsnano.0c06596 |
0.555 |
|
| 2020 |
Cheng K, Wang H, Bang J, West D, Zhao J, Zhang S. Carrier Dynamics and Transfer Across the CdS/MoS Interface Upon Optical Excitation. The Journal of Physical Chemistry Letters. PMID 32693591 DOI: 10.1021/Acs.Jpclett.0C01188 |
0.561 |
|
| 2020 |
Ma J, Wang H, Nie S, Yi C, Xu Y, Li H, Jandke J, Wulfhekel W, Huang Y, West D, Richard P, Chikina A, Strocov VN, Mesot J, Weng H, et al. Emergence of Nontrivial Low-Energy Dirac Fermions in Antiferromagnetic EuCd As. Advanced Materials (Deerfield Beach, Fla.). e1907565. PMID 32091144 DOI: 10.1002/Adma.201907565 |
0.583 |
|
| 2018 |
Choe DH, West D, Zhang S. Band Alignment and the Built-in Potential of Solids. Physical Review Letters. 121: 196802. PMID 30468617 DOI: 10.1103/Physrevlett.121.196802 |
0.594 |
|
| 2018 |
Li Y, Wang T, Wang H, Li Z, Chen Y, West D, Sankar R, Ulaganathan RK, Chou FC, Wetzel C, Xu CY, Zhang S, Shi S. Enhanced Light Emission from the Ridge of Two-dimensional InSe Flakes. Nano Letters. PMID 30021441 DOI: 10.1021/Acs.Nanolett.8B01940 |
0.584 |
|
| 2018 |
Chen NK, Li XB, Bang J, Wang XP, Han D, West D, Zhang S, Sun HB. Directional Forces by Momentumless Excitation and Order-to-Order Transition in Peierls-Distorted Solids: The Case of GeTe. Physical Review Letters. 120: 185701. PMID 29775378 DOI: 10.1103/Physrevlett.120.185701 |
0.544 |
|
| 2018 |
Lucking MC, Xie W, Choe DH, West D, Lu TM, Zhang SB. Traditional Semiconductors in the Two-Dimensional Limit. Physical Review Letters. 120: 086101. PMID 29543005 DOI: 10.1103/Physrevlett.120.086101 |
0.357 |
|
| 2018 |
Zhang W, West D, Lee SH, Qiu Y, Chang C, Moodera JS, Hor YS, Zhang S, Wu W. Electronic fingerprints of Cr and V dopants in the topological insulator
Sb2Te3 Physical Review B. 98. DOI: 10.1103/Physrevb.98.115165 |
0.568 |
|
| 2018 |
West D, Zhang SB. Thin-film topological insulators for continuously tunable terahertz absorption Applied Physics Letters. 112: 91601. DOI: 10.1063/1.5016803 |
0.355 |
|
| 2017 |
Gao N, Yang L, Gao F, Kurtz R, West D, Zhang S. Long-time atomistic dynamics through a new self-adaptive accelerated molecular dynamics method. Journal of Physics. Condensed Matter : An Institute of Physics Journal. PMID 28059774 DOI: 10.1088/1361-648X/Aa574B |
0.524 |
|
| 2017 |
Wang D, Han D, Li X, Chen N, West D, Meunier V, Zhang S, Sun H. Charged defects in two-dimensional semiconductors of arbitrary thickness and geometry: Formulation and application to few-layer black phosphorus Physical Review B. 96. DOI: 10.1103/Physrevb.96.155424 |
0.554 |
|
| 2016 |
Dai J, West D, Wang X, Wang Y, Kwok D, Cheong SW, Zhang SB, Wu W. Toward the Intrinsic Limit of the Topological Insulator Bi_{2}Se_{3}. Physical Review Letters. 117: 106401. PMID 27636482 DOI: 10.1103/Physrevlett.117.106401 |
0.375 |
|
| 2016 |
Wang H, Bang J, Sun Y, Liang L, West D, Meunier V, Zhang S. The role of collective motion in the ultrafast charge transfer in van der Waals heterostructures. Nature Communications. 7: 11504. PMID 27160484 DOI: 10.1038/Ncomms11504 |
0.565 |
|
| 2016 |
Wang N, Sun Y, Zhang Y, West D, Duan W, Zhang S. Stability investigations on the non-vdW-exfoliated surfaces of the topological insulator Bi2Te3: A first-principles study Physical Review B - Condensed Matter and Materials Physics. 93. DOI: 10.1103/Physrevb.93.115306 |
0.53 |
|
| 2015 |
Liu W, West D, He L, Xu Y, Liu J, Wang K, Wang Y, van der Laan G, Zhang R, Zhang S, Wang KL. Atomic-Scale Magnetism of Cr-Doped Bi2Se3 Thin Film Topological Insulators. Acs Nano. PMID 26348798 DOI: 10.1021/Acsnano.5B03980 |
0.557 |
|
| 2015 |
Seixas L, West D, Fazzio A, Zhang SB. Vertical twinning of the Dirac cone at the interface between topological insulators and semiconductors. Nature Communications. 6: 7630. PMID 26138034 DOI: 10.1038/Ncomms8630 |
0.374 |
|
| 2015 |
Lucking M, Sun YY, West D, Zhang S. A nucleus-coupled electron transfer mechanism for TiO2-catalyzed water splitting. Physical Chemistry Chemical Physics : Pccp. 17: 16779-83. PMID 26050615 DOI: 10.1039/C5Cp01202C |
0.565 |
|
| 2015 |
Wang D, Han D, Li XB, Xie SY, Chen NK, Tian WQ, West D, Sun HB, Zhang SB. Determination of formation and ionization energies of charged defects in two-dimensional materials. Physical Review Letters. 114: 196801. PMID 26024189 DOI: 10.1103/Physrevlett.114.196801 |
0.328 |
|
| 2015 |
Jiang Y, Zhang X, Wang Y, Wang N, West D, Zhang S, Zhang Z. Vertical/Planar Growth and Surface Orientation of Bi2Te3 and Bi2Se3 Topological Insulator Nanoplates. Nano Letters. 15: 3147-52. PMID 25919088 DOI: 10.1021/Acs.Nanolett.5B00240 |
0.534 |
|
| 2015 |
Li Y, West D, Huang H, Li J, Zhang SB, Duan W. Theory of the Dirac half metal and quantum anomalous Hall effect in Mn-intercalated epitaxial graphene Physical Review B - Condensed Matter and Materials Physics. 92. DOI: 10.1103/Physrevb.92.201403 |
0.337 |
|
| 2015 |
Bang J, Sun YY, West D, Meyer BK, Zhang S. Molecular doping of ZnO by ammonia: A possible shallow acceptor Journal of Materials Chemistry C. 3: 339-344. DOI: 10.1039/C4Tc02209B |
0.56 |
|
| 2014 |
Chen Y, Sun YY, Wang H, West D, Xie Y, Zhong J, Meunier V, Cohen ML, Zhang SB. Carbon kagome lattice and orbital-frustration-induced metal-insulator transition for optoelectronics. Physical Review Letters. 113: 085501. PMID 25192104 DOI: 10.1103/Physrevlett.113.085501 |
0.372 |
|
| 2014 |
Fang L, Iyer RG, Tan G, West DJ, Zhang S, Kanatzidis MG. The new phase [Tl₄Sb₆Se₁₀][Sn₅Sb₂Se₁₄]: a naturally formed semiconducting heterostructure with two-dimensional conductance. Journal of the American Chemical Society. 136: 11079-84. PMID 25058471 DOI: 10.1021/Ja505301Y |
0.549 |
|
| 2014 |
Mann C, West D, Miotkowski I, Chen YP, Zhang S, Shih C. Observation of Coulomb repulsion between Cu intercalants inCuxBi2Se3 Physical Review B. 89. DOI: 10.1103/Physrevb.89.155312 |
0.511 |
|
| 2014 |
Wang N, West D, Liu J, Li J, Yan Q, Gu B, Zhang SB, Duan W. Microscopic origin of the p -type conductivity of the topological crystalline insulator SnTe and the effect of Pb alloying Physical Review B. 89: 45142. DOI: 10.1103/Physrevb.89.045142 |
0.381 |
|
| 2014 |
Lucking M, Sun Y, West D, Zhang S. Absolute redox potential of liquid water: a first-principles theory Chemical Science. 5: 1216-1220. DOI: 10.1039/C3Sc52287C |
0.538 |
|
| 2014 |
Liu X, Sun YY, West D, Gao X, Zhang SB. Modulation of the Band Gap Increase in Nanocrystals by Surface Passivation The Journal of Physical Chemistry C. 118: 14026-14030. DOI: 10.1021/Jp503701K |
0.593 |
|
| 2013 |
Mann C, West D, Miotkowski I, Chen YP, Zhang S, Shih CK. Mapping the 3D surface potential in Bi₂Se₃. Nature Communications. 4: 2277. PMID 23912773 DOI: 10.1038/Ncomms3277 |
0.575 |
|
| 2013 |
Jiang Y, Wang Y, Sagendorf J, West D, Kou X, Wei X, He L, Wang KL, Zhang S, Zhang Z. Direct atom-by-atom chemical identification of nanostructures and defects of topological insulators. Nano Letters. 13: 2851-6. PMID 23713705 DOI: 10.1021/Nl401186D |
0.603 |
|
| 2013 |
Bang J, Meng S, Sun YY, West D, Wang Z, Gao F, Zhang SB. Regulating energy transfer of excited carriers and the case for excitation-induced hydrogen dissociation on hydrogenated graphene. Proceedings of the National Academy of Sciences of the United States of America. 110: 908-11. PMID 23277576 DOI: 10.1073/Pnas.1210313110 |
0.572 |
|
| 2012 |
Sun YY, Ruan WY, Gao X, Bang J, Kim Y, Lee K, West D, Liu X, Chan T, Chou MY, Zhang SB. Phase diagram of graphene nanoribbons and band-gap bifurcation of Dirac fermions under quantum confinement Physical Review B. 85. DOI: 10.1103/Physrevb.85.195464 |
0.367 |
|
| 2012 |
West D, Sun YY, Zhang SB, Zhang T, Ma X, Cheng P, Zhang YY, Chen X, Jia JF, Xue QK. Identification of magnetic dopants on the surfaces of topological insulators: Experiment and theory for Fe on Bi2Te3(111) Physical Review B. 85. DOI: 10.1103/Physrevb.85.081305 |
0.31 |
|
| 2012 |
West D, Sun YY, Zhang SB. Importance of the correct Fermi energy on the calculation of defect formation energies in semiconductors Applied Physics Letters. 101: 082105. DOI: 10.1063/1.4745779 |
0.356 |
|
| 2011 |
Chan TL, West D, Zhang SB. Limits on passivating defects in semiconductors: the case of Si edge dislocations. Physical Review Letters. 107: 035503. PMID 21838376 DOI: 10.1103/Physrevlett.107.035503 |
0.371 |
|
| 2010 |
Lee K, Kim YH, Sun YY, West D, Zhao Y, Chen Z, Zhang SB. Hole-mediated hydrogen spillover mechanism in metal-organic frameworks. Physical Review Letters. 104: 236101. PMID 20867253 DOI: 10.1103/Physrevlett.104.236101 |
0.306 |
|
| 2010 |
Han D, West D, Li X, Xie S, Sun H, Zhang SB. Impurity doping in SiO 2 : Formation energies and defect levels from first-principles calculations Physical Review B. 82: 155132. DOI: 10.1103/Physrevb.82.155132 |
0.354 |
|
| 2009 |
West D, Limpijumnong S, Zhang SB. Band structures and native defects of ammonia borane Physical Review B. 80. DOI: 10.1103/Physrevb.80.064109 |
0.396 |
|
| 2008 |
Sanati M, West D, Albers RC. Calculations for displacive ω-phase transformations in Ti-Al alloys with Nb additions at finite temperature Journal of Physics Condensed Matter. 20. DOI: 10.1088/0953-8984/20/46/465206 |
0.323 |
|
| 2007 |
Sanati M, West D, Albers RC. Electronic structure, phase stability, and chemical ordering of the ω phase in a Ti3 Al2 X (X=Nb,V) alloy Physical Review B - Condensed Matter and Materials Physics. 76. DOI: 10.1103/Physrevb.76.174101 |
0.325 |
|
| 2007 |
Sanati M, West D, Albers RC. First-principles study of ω-phase formation in the Ti 3Al2V system Journal of Physics Condensed Matter. 19. DOI: 10.1088/0953-8984/19/38/386221 |
0.333 |
|
| 2006 |
Kohli KK, Davies G, Vinh NQ, West D, Estreicher SK, Gregorkiewicz T, Izeddin I, Itoh KM. Isotope dependence of the lifetime of the vibration of oxygen in silicon. Physical Review Letters. 96: 225503. PMID 16803320 DOI: 10.1103/Physrevlett.96.225503 |
0.306 |
|
| 2006 |
Estreicher SK, West D. Vibrational lifetimes of light impurities in silicon Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions With Materials and Atoms. 253: 196-199. DOI: 10.1016/J.Nimb.2006.10.044 |
0.316 |
|
| 2005 |
Estreicher SK, West D, Sanati M. Cu0*: A metastable configuration of the {Cus,Cui} pair in Si Physical Review B - Condensed Matter and Materials Physics. 72. DOI: 10.1103/Physrevb.72.121201 |
0.31 |
|
| 2004 |
Estreicher SK, Sanati M, West D, Ruymgaart F. Thermodynamics of impurities in semiconductors Physical Review B - Condensed Matter and Materials Physics. 70. DOI: 10.1103/Physrevb.70.125209 |
0.372 |
|
| 2003 |
Estreicher SK, West D, Goss J, Knack S, Weber J. First-principles calculations of pseudolocal vibrational modes: the case of Cu and Cu pairs in Si. Physical Review Letters. 90: 035504. PMID 12570504 DOI: 10.1103/Physrevlett.90.035504 |
0.304 |
|
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