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Christian Wurm - Publications

Affiliations: 
University of California, Santa Barbara, Santa Barbara, CA, United States 
Area:
Electrical and computer engineering
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6 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2020 Romanczyk B, Li W, Guidry M, Hatui N, Krishna A, Wurm C, Keller S, Mishra UK. N-polar GaN-on-Sapphire Deep Recess HEMTs with High W-Band Power Density Ieee Electron Device Letters. 1-1. DOI: 10.1109/Led.2020.3022401  0.746
2020 Shrestha P, Guidry M, Romanczyk B, Hatui N, Wurm C, Krishna A, Pasayat SS, Karnaty RR, Keller S, Buckwalter JF, Mishra UK. High Linearity and High Gain Performance of N-Polar GaN MIS-HEMT at 30 GHz Ieee Electron Device Letters. 41: 681-684. DOI: 10.1109/Led.2020.2980841  0.731
2020 Romanczyk B, Mishra UK, Zheng X, Guidry M, Li H, Hatui N, Wurm C, Krishna A, Ahmadi E, Keller S. W-Band Power Performance of SiN-Passivated N-Polar GaN Deep Recess HEMTs Ieee Electron Device Letters. 41: 349-352. DOI: 10.1109/Led.2020.2967034  0.703
2020 Wurm C, Ahmadi E, Wu F, Hatui N, Keller S, Speck J, Mishra U. Growth of high-quality N-polar GaN on bulk GaN by plasma-assisted molecular beam epitaxy Solid State Communications. 305: 113763. DOI: 10.1016/J.Ssc.2019.113763  0.693
2019 Pasayat SS, Ahmadi E, Romanczyk B, Koksaldi O, Agarwal A, Guidry M, Gupta C, Wurm C, Keller S, Mishra UK. First demonstration of RF N-polar GaN MIS-HEMTs grown on bulk GaN using PAMBE Semiconductor Science and Technology. 34: 45009. DOI: 10.1088/1361-6641/Ab0761  0.582
2018 Lund C, Catalano M, Wang L, Wurm C, Mates T, Kim M, Nakamura S, DenBaars SP, Mishra UK, Keller S. Metal-organic chemical vapor deposition of N-polar InN quantum dots and thin films on vicinal GaN Journal of Applied Physics. 123: 055702. DOI: 10.1063/1.5009904  0.69
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