Jongseok Han - Publications

Affiliations: 
2013-2018 Samsung Display Co 

6 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2021 Han JW, Heo W, Lee D, Kang C, Kim HY, Jun I, So I, Hur H, Lee MG, Jung M, Kim JY. Plasma Membrane Localized GCaMP-MS4A12 by Orai1 Co-Expression Shows Thapsigargin- and Ca-Dependent Fluorescence Increases. Molecules and Cells. 44: 223-232. PMID 33935043 DOI: 10.14348/molcells.2021.2031  0.473
2019 Sohn J, Ko D, Lee H, Han J, Lee S, Lee C. Degradation mechanism of blue thermally activated delayed fluorescent organic light-emitting diodes under electrical stress Organic Electronics. 70: 286-291. DOI: 10.1016/J.Orgel.2019.04.033  0.696
2018 Song H, Han J, Lee G, Sohn J, Kwon Y, Choi M, Lee C. Enhanced light out-coupling in OLED employing thermal-assisted, self-aggregated silver nano particles Organic Electronics. 52: 230-236. DOI: 10.1016/J.Orgel.2017.10.025  0.622
2017 Ryoo CH, Cho I, Han J, Yang JH, Kwon JE, Kim S, Jeong H, Lee C, Park SY. Structure-property correlation in luminescent indolo[3,2-b]indole (IDID) derivatives: unravelling the mechanism of high efficiency thermally activated delayed fluorescence (TADF). Acs Applied Materials & Interfaces. PMID 29111658 DOI: 10.1021/Acsami.7B13158  0.653
2017 Lee G, Lee IH, Park HL, Lee SH, Han J, Lee C, Keum CM, Lee SD. Vertical organic light-emitting transistor showing a high current on/off ratio through dielectric encapsulation for the effective charge pathway Journal of Applied Physics. 121: 24502. DOI: 10.1063/1.4974008  0.484
2016 Han J, Ko D, Park M, Roh J, Jung H, Lee Y, Kwon Y, Sohn J, Bae WK, Chin BD, Lee C. Toward high-resolution, inkjet-printed, quantum dot light-emitting diodes for next-generation displays Journal of the Society For Information Display. DOI: 10.1002/Jsid.467  0.484
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