Year |
Citation |
Score |
2023 |
Zhao F, Turiansky ME, Alkauskas A, Van de Walle CG. Trap-Assisted Auger-Meitner Recombination from First Principles. Physical Review Letters. 131: 056402. PMID 37595230 DOI: 10.1103/PhysRevLett.131.056402 |
0.32 |
|
2020 |
Zhang X, Shen JX, Van de Walle CG. Anomalous Auger Recombination in PbSe. Physical Review Letters. 125: 037401. PMID 32745394 DOI: 10.1103/PhysRevLett.125.037401 |
0.327 |
|
2019 |
Turiansky ME, Alkauskas A, Bassett LC, Van de Walle CG. Dangling Bonds in Hexagonal Boron Nitride as Single-Photon Emitters. Physical Review Letters. 123: 127401. PMID 31633955 DOI: 10.1103/PhysRevLett.123.127401 |
0.339 |
|
2013 |
Zhao Y, Yan Q, Feezell D, Fujito K, Van de Walle CG, Speck JS, DenBaars SP, Nakamura S. Optical polarization characteristics of semipolar (3031) and (3031) InGaN/GaN light-emitting diodes. Optics Express. 21: A53-9. PMID 23389275 DOI: 10.1364/Oe.21.000A53 |
0.571 |
|
2012 |
Alkauskas A, Lyons JL, Steiauf D, Van de Walle CG. First-principles calculations of luminescence spectrum line shapes for defects in semiconductors: the example of GaN and ZnO. Physical Review Letters. 109: 267401. PMID 23368616 |
0.336 |
|
2012 |
Noffsinger J, Kioupakis E, Van de Walle CG, Louie SG, Cohen ML. Phonon-assisted optical absorption in silicon from first principles. Physical Review Letters. 108: 167402. PMID 22680754 DOI: 10.1103/Physrevlett.108.167402 |
0.576 |
|
2012 |
Rinke P, Schleife A, Kioupakis E, Janotti A, Rödl C, Bechstedt F, Scheffler M, Van de Walle CG. First-principles optical spectra for F centers in MgO. Physical Review Letters. 108: 126404. PMID 22540604 DOI: 10.1103/Physrevlett.108.126404 |
0.556 |
|
2011 |
Moses PG, Miao M, Yan Q, Van de Walle CG. Hybrid functional investigations of band gaps and band alignments for AlN, GaN, InN, and InGaN. The Journal of Chemical Physics. 134: 084703. PMID 21361552 DOI: 10.1063/1.3548872 |
0.552 |
|
2009 |
Rinke P, Janotti A, Scheffler M, Van de Walle CG. Defect formation energies without the band-gap problem: combining density-functional theory and the GW approach for the silicon self-interstitial. Physical Review Letters. 102: 026402. PMID 19257298 DOI: 10.1103/Physrevlett.102.026402 |
0.468 |
|
2008 |
Singh AK, Janotti A, Scheffler M, Van de Walle CG. Sources of electrical conductivity in SnO2. Physical Review Letters. 101: 055502. PMID 18764405 DOI: 10.1103/Physrevlett.101.055502 |
0.368 |
|
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