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Qin Zhang - Publications

Affiliations: 
2009 Electrical Engineering University of Notre Dame, Notre Dame, IN, United States 
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28 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2014 Zhang Q, Lu Y, Richter CA, Jena D, Seabaugh A. Optimum bandgap and supply voltage in tunnel FETs Ieee Transactions On Electron Devices. 61: 2719-2724. DOI: 10.1109/Ted.2014.2330805  0.676
2013 Xu K, Zeng C, Zhang Q, Yan R, Ye P, Wang K, Seabaugh AC, Xing HG, Suehle JS, Richter CA, Gundlach DJ, Nguyen NV. Direct measurement of Dirac point energy at the graphene/oxide interface. Nano Letters. 13: 131-6. PMID 23244683 DOI: 10.1021/Nl303669W  0.563
2013 Yan R, Zhang Q, Kirillov OA, Li W, Basham J, Boosalis A, Liang X, Jena D, Richter CA, Seabaugh AC, Gundlach DJ, Xing HG, Nguyen NV. Graphene as transparent electrode for direct observation of hole photoemission from silicon to oxide Applied Physics Letters. 102. DOI: 10.1063/1.4796169  0.563
2013 Zhang Q, Li R, Yan R, Kosel T, Xing HG, Seabaugh AC, Xu K, Kirillov OA, Gundlach DJ, Richter CA, Nguyen NV. A unique photoemission method to measure semiconductor heterojunction band offsets Applied Physics Letters. 102. DOI: 10.1063/1.4772979  0.555
2012 Zhou G, Lu Y, Li R, Zhang Q, Liu Q, Vasen T, Zhu H, Kuo JM, Kosel T, Wistey M, Fay P, Seabaugh A, Xing H. InGaAs/InP tunnel FETs with a subthreshold swing of 93 mV/dec and I ON/I OFF ratio near 10 6 Ieee Electron Device Letters. 33: 782-784. DOI: 10.1109/Led.2012.2189546  0.771
2012 Lu Y, Zhou G, Li R, Liu Q, Zhang Q, Vasen T, Chae SD, Kosel T, Wistey M, Xing H, Seabaugh A, Fay P. Performance of AlGaSb/InAs TFETs with gate electric field and tunneling direction aligned Ieee Electron Device Letters. 33: 655-657. DOI: 10.1109/Led.2012.2186554  0.771
2012 Li R, Lu Y, Zhou G, Liu Q, Chae SD, Vasen T, Hwang WS, Zhang Q, Fay P, Kosel T, Wistey M, Xing H, Seabaugh A. AlGaSb/InAs tunnel field-effect transistor with on-current of 78 μaμm at 0.5 v Ieee Electron Device Letters. 33: 363-365. DOI: 10.1109/Led.2011.2179915  0.77
2012 Zhou G, Li R, Vasen T, Qi M, Chae S, Lu Y, Zhang Q, Zhu H, Kuo JM, Kosel T, Wistey M, Fay P, Seabaugh A, Xing H. Novel gate-recessed vertical InAs/GaSb TFETs with record high I ON of 180 μa/μm at VDS = 0.5 v Technical Digest - International Electron Devices Meeting, Iedm. 32.6.1-32.6.4. DOI: 10.1109/IEDM.2012.6479154  0.66
2012 Jena D, Fang T, Zhang Q, Xing H. Response to "comment on 'Zener tunneling semiconducting nanotubes and graphene nanoribbon p-n junctions'" Applied Physics Letters. 101. DOI: 10.1063/1.4766741  0.308
2012 Yan R, Zhang Q, Li W, Calizo I, Shen T, Richter CA, Hight-Walker AR, Liang X, Seabaugh A, Jena D, Grace Xing H, Gundlach DJ, Nguyen NV. Determination of graphene work function and graphene-insulator- semiconductor band alignment by internal photoemission spectroscopy Applied Physics Letters. 101. DOI: 10.1063/1.4734955  0.593
2012 Zhang Q, Zhou G, Xing HG, Seabaugh AC, Xu K, Sio H, Kirillov OA, Richter CA, Nguyen NV. Tunnel field-effect transistor heterojunction band alignment by internal photoemission spectroscopy Applied Physics Letters. 100. DOI: 10.1063/1.3692589  0.596
2012 Li R, Lu Y, Chae SD, Zhou G, Liu Q, Chen C, Shahriar Rahman M, Vasen T, Zhang Q, Fay P, Kosel T, Wistey M, Xing HG, Koswatta S, Seabaugh A. InAs/AlGaSb heterojunction tunnel field-effect transistor with tunnelling in-line with the gate field Physica Status Solidi (C) Current Topics in Solid State Physics. 9: 389-392. DOI: 10.1002/Pssc.201100241  0.789
2011 Seabaugh A, Chae SD, Fay P, Hwang WS, Kosel T, Li R, Liu Q, Lu Y, Vasen T, Wistey M, Xing H, Zhou G, Zhang Q. III-V tunnel field-effect transistors Ecs Transactions. 41: 227-229. DOI: 10.1149/1.3633302  0.636
2011 Zhao P, Zhang Q, Jena D, Koswatta SO. Influence of metal-graphene contact on the operation and scalability of graphene field-effect transistors Ieee Transactions On Electron Devices. 58: 3170-3178. DOI: 10.1109/Ted.2011.2159507  0.34
2011 Zhou G, Lu Y, Li R, Zhang Q, Hwang WS, Liu Q, Vasen T, Chen C, Zhu H, Kuo JM, Koswatta S, Kosel T, Wistey M, Fay P, Seabaugh A, et al. Vertical InGaAs/InP tunnel FETs with tunneling normal to the gate Ieee Electron Device Letters. 32: 1516-1518. DOI: 10.1109/Led.2011.2164232  0.782
2011 Zhang Q, Zhou G, Xing HG, Seabaugh AC, Xu K, Kirillov OA, Richter CA, Nguyen NV. Band alignment of TFET heterojunctions and post deposition annealing effects by internal photoemission spectroscopy 2011 International Semiconductor Device Research Symposium, Isdrs 2011. DOI: 10.1109/ISDRS.2011.6135253  0.629
2010 Sutar S, Zhang Q, Seabaugh A. InAlAs/InGaAs interband tunnel diodes for SRAM Ieee Transactions On Electron Devices. 57: 2587-2593. DOI: 10.1109/Ted.2010.2059611  0.739
2010 Zhang Q, Lu Y, Xing HG, Koester SJ, Koswatta SO. Scalability of atomic-thin-body (ATB) transistors based on graphene nanoribbons Ieee Electron Device Letters. 31: 531-533. DOI: 10.1109/Led.2010.2045100  0.358
2010 Seabaugh AC, Zhang Q. Low-voltage tunnel transistors for beyond CMOS logic Proceedings of the Ieee. 98: 2095-2110. DOI: 10.1109/JPROC.2010.2070470  0.657
2009 Wheeler D, Kabeer S, Lu Y, Vasen T, Zhang Q, Zhou G, Clark K, Zhu H, Kao YC, Fay P, Kosel T, Xing H, Seabaugh A. Fabrication approach for lateral InGaAs tunnel transistors 2009 International Semiconductor Device Research Symposium, Isdrs '09. DOI: 10.1109/ISDRS.2009.5378160  0.756
2009 Kabeer S, Vasen T, Wheeler D, Zhang Q, Koswatta S, Zhu H, Clark K, Kuo JM, Kao YC, Corcoran S, Doyle B, Fay P, Kosel T, Xing H, Seabaugh A. Effect of dopant profile on current-voltage characteristics of p+n+ In 0.53Ga0.47As tunnel junctions 2009 International Semiconductor Device Research Symposium, Isdrs '09. DOI: 10.1109/ISDRS.2009.5378127  0.751
2009 Zhang Q, Sutar S, Kosel T, Seabaugh A. Fully-depleted Ge interband tunnel transistor: Modeling and junction formation Solid-State Electronics. 53: 30-35. DOI: 10.1016/J.Sse.2008.09.010  0.776
2008 Zhang Q, Fang T, Xing H, Seabaugh A, Jena D. Graphene nanoribbon tunnel transistors Ieee Electron Device Letters. 29: 1344-1346. DOI: 10.1109/Led.2008.2005650  0.638
2008 Zhang Q, Seabaugh A. Can the interband tunnel FET outperform Si CMOS? Device Research Conference - Conference Digest, Drc. 73-74. DOI: 10.1109/DRC.2008.4800740  0.548
2008 Sutar S, Zhang Q, Seabaugh A. Structural sensitivity of interband tunnel diodes for SRAM Device Research Conference - Conference Digest, Drc. 65-66. DOI: 10.1109/DRC.2008.4800736  0.695
2008 Jena D, Fang T, Zhang Q, Xing H. Zener tunneling in semiconducting nanotube and graphene nanoribbon p−n junctions Applied Physics Letters. 93: 112106. DOI: 10.1063/1.2983744  0.383
2007 Zhang Q, Sutar S, Kosel T, Seabaugh A. Rapid melt growth of Ge tunnel junctions for interband tunnel transistors 2007 International Semiconductor Device Research Symposium, Isdrs. DOI: 10.1109/ISDRS.2007.4422291  0.727
2006 Zhang Q, Zhao W, Seabaugh A. Low-subthreshold-swing tunnel transistors Ieee Electron Device Letters. 27: 297-300. DOI: 10.1109/Led.2006.871855  0.701
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