Michael Shur - Publications

Affiliations: 
1967 Physics A. F. Ioffe Institute of Physics and Technology  
 1977-1978 Wayne State University, Detroit, MI, United States 
 1978-1979 Oakland University, Rochester Hills, MI, United States 
 1979-1989 Electrical Engineering University of Minnesota, Twin Cities, Minneapolis, MN 
 1989-1996 University of Virginia, Charlottesville, VA 
 1996- Solid State Electronics Rensselaer Polytechnic Institute, Troy, NY, United States 

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Year Citation  Score
2021 Shur M. Pandemic Equation for Describing and Predicting COVID19 Evolution. Journal of Healthcare Informatics Research. 1-13. PMID 33437912 DOI: 10.1007/s41666-020-00084-2  0.01
2020 Nikoobakht B, Hansen RP, Zong Y, Agrawal A, Shur M, Tersoff J. High-brightness lasing at submicrometer enabled by droop-free fin light-emitting diodes (LEDs). Science Advances. 6: eaba4346. PMID 32851164 DOI: 10.1126/Sciadv.Aba4346  0.01
2020 Ryzhii V, Ryzhii M, Maltsev PP, Karasik VE, Mitin V, Shur MS, Otsuji T. Far-infrared and terahertz emitting diodes based on graphene/black-P and graphene/MoS heterostructures. Optics Express. 28: 24136-24151. PMID 32752399 DOI: 10.1364/Oe.394662  1
2020 Ryzhii V, Ryzhii M, Mitin V, Shur MS, Otsuji T. Far-infrared photodetectors based on graphene/black-AsP heterostructures. Optics Express. 28: 2480-2498. PMID 32121937 DOI: 10.1364/Oe.376299  1
2019 Gorbenko IV, Kachorovskii VY, Shur M. Terahertz plasmonic detector controlled by phase asymmetry. Optics Express. 27: 4004-4013. PMID 30876023 DOI: 10.1364/Oe.27.004004  1
2019 Lavrukhin DV, Yachmenev AE, Glinskiy IA, Khabibullin RA, Goncharov YG, Ryzhii M, Otsuji T, Spector IE, Shur M, Skorobogatiy M, Zaytsev KI, Ponomarev DS. Terahertz photoconductive emitter with dielectric-embedded high-aspect-ratio plasmonic grating for operation with low-power optical pumps Aip Advances. 9: 15112. DOI: 10.1063/1.5081119  1
2019 Ryzhii V, Ryzhii M, Ponomarev DS, Leiman VG, Mitin V, Shur MS, Otsuji T. Negative photoconductivity and hot-carrier bolometric detection of terahertz radiation in graphene-phosphorene hybrid structures Journal of Applied Physics. 125: 151608. DOI: 10.1063/1.5054142  1
2019 Ryzhii M, Otsuji T, Ryzhii V, Aleshkin V, Dubinov A, Karasik VE, Leiman V, Mitin V, Shur MS. Concepts of infrared and terahertz photodetectors based on vertical graphene van der Waals and HgTe-CdHgTe heterostructures Opto-Electronics Review. 27: 219-223. DOI: 10.1016/J.Opelre.2019.06.002  1
2018 Gayduchenko I, Fedorov G, Moskotin M, Yagodkin D, Seliverstov S, Gol'tsman GN, Kuntsevich A, Rybin M, Obraztsova ED, Leiman V, Shur MS, Otsuji T, Ryzhii V. Manifestation of plasmonic response in the detection of sub-terahertz radiation by graphene based devices. Nanotechnology. PMID 29553479 DOI: 10.1088/1361-6528/aab7a5  1
2018 Aleshkin VY, Dubinov AA, Morozov SV, Ryzhii M, Otsuji T, Mitin V, Shur MS, Ryzhii V. Interband infrared photodetectors based on HgTe-CdHgTe quantum-well heterostructures Optical Materials Express. 8: 1349-1358. DOI: 10.1364/Ome.8.001349  1
2018 Ryzhii V, Otsuji T, Karasik VE, Ryzhii M, Leiman VG, Mitin V, Shur MS. Comparison of Intersubband Quantum-Well and Interband Graphene-Layer Infrared Photodetectors Ieee Journal of Quantum Electronics. 54: 1-8. DOI: 10.1109/Jqe.2018.2797912  1
2018 Ryzhii V, Ryzhii M, Svintsov D, Leiman V, Maltsev PP, Ponomarev DS, Mitin V, Shur MS, Otsuji T. Real-space-transfer mechanism of negative differential conductivity in gated graphene-phosphorene hybrid structures: Phenomenological heating model Journal of Applied Physics. 124: 114501. DOI: 10.1063/1.5046135  1
2017 Ryzhii V, Ryzhii M, Svintsov D, Leiman V, Mitin V, Shur MS, Otsuji T. Nonlinear response of infrared photodetectors based on van der Waals heterostructures with graphene layers. Optics Express. 25: 5536-5549. PMID 28380812 DOI: 10.1364/Oe.25.005536  1
2017 Liu G, Rumyantsev S, Bloodgood MA, Salguero TT, Shur M, Balandin AA. Low-Frequency Electronic Noise in Quasi-1D TaSe3 van der Waals Nanowires. Nano Letters. 17: 377-383. PMID 28073263 DOI: 10.1021/Acs.Nanolett.6B04334  1
2017 Lachab M, Sun W, Jain R, Dobrinsky A, Gaevski M, Rumyantsev S, Shur M, Shatalov M. Optical polarization control of photo-pumped stimulated emissions at 238 nm from AlGaN multiple-quantum-well laser structures on AlN substrates Applied Physics Express. 10: 12702. DOI: 10.7567/Apex.10.012702  1
2017 Shur M, Rupper G, Rudin S. Ultimate limits for highest modulation frequency and shortest response time of field effect transistor Proceedings of Spie. 10194. DOI: 10.1117/12.2261105  1
2017 Shatalov M, Jain R, Saxena T, Dobrinsky A, Shur M. Development of Deep UV LEDs and Current Problems in Material and Device Technology Semiconductors and Semimetals. 96: 45-83. DOI: 10.1016/Bs.Semsem.2016.08.002  1
2016 Ahmadivand A, Sinha R, Gerislioglu B, Karabiyik M, Pala N, Shur M. Transition from capacitive coupling to direct charge transfer in asymmetric terahertz plasmonic assemblies. Optics Letters. 41: 5333-5336. PMID 27842126 DOI: 10.1364/Ol.41.005333  1
2016 Stolyarov MA, Liu G, Bloodgood MA, Aytan E, Jiang C, Samnakay R, Salguero TT, Nika DL, Rumyantsev SL, Shur MS, Bozhilov KN, Balandin AA. Breakdown current density in h-BN-capped quasi-1D TaSe3 metallic nanowires: prospects of interconnect applications. Nanoscale. PMID 27531559 DOI: 10.1039/C6Nr03469A  1
2016 Muraviev A, Gutin A, Rupper G, Rudin S, Shen X, Yamaguchi M, Aizin G, Shur M. New optical gating technique for detection of electric field waveforms with subpicosecond resolution. Optics Express. 24: 12730-12739. PMID 27410292 DOI: 10.1364/Oe.24.012730  1
2016 Rimeika R, Čiplys D, Jonkus V, Shur M. Acoustoelectric effects in reflection of leaky-wave-radiated bulk acoustic waves from piezoelectric crystal-conductive liquid interface. Ultrasonics. 64: 196-9. PMID 26391353 DOI: 10.1016/J.Ultras.2015.09.004  1
2016 Coquillat D, Nodjiadjim V, Blin S, Konczykowska A, Dyakonova N, Consejo C, Nouvel P, Pènarier A, Torres J, But D, Ruffenach S, Teppe F, Riet M, Muraviev A, Gutin A, ... Shur M, et al. High-Speed Room Temperature Terahertz Detectors Based on InP Double Heterojunction Bipolar Transistors International Journal of High Speed Electronics and Systems. 25: 1640011. DOI: 10.1142/S0129156416400115  1
2016 Shur M, Rudin S, Rupper G, Muraviev A. Novel ultrasensitive plasmonic detector of terahertz pulses enhanced by femtosecond optical pulses Proceedings of Spie. 9934. DOI: 10.1117/12.2238067  1
2016 Rudin S, Rupper G, Reed ML, Shur M. Plasmonic response of partially gated field effect transistors Proceedings of Spie. 9934. DOI: 10.1117/12.2238036  1
2016 Marcinkevičius S, Jain R, Shatalov M, Gaska R, Shur M. Scanning near-field optical microscopy of AlGaN epitaxial layers Proceedings of Spie. 9926: 992605. DOI: 10.1117/12.2236999  1
2016 Shur M. Recent developments in terahertz sensing technology Proceedings of Spie. 9836. DOI: 10.1117/12.2218682  0.01
2016 Saxena T, Shur M. Silicon-on-Insulator Photoimpedance Sensor Using Capacitance Dispersion Ieee Transactions On Electron Devices. DOI: 10.1109/Ted.2016.2576458  1
2016 Ryzhii V, Ryzhii M, Shur MS, Mitin V, Satou A, Otsuji T. Resonant plasmonic terahertz detection in graphene split-gate field-effect transistors with lateral p–n junctions Journal of Physics D. 49: 315103. DOI: 10.1088/0022-3727/49/31/315103  1
2016 Podlipskas, Aleksiejunas R, Kadys A, Mickevičius J, Jurkevičius J, Tamulaitis G, Shur M, Shatalov M, Yang J, Gaska R. Dependence of radiative and nonradiative recombination on carrier density and Al content in thick AlGaN epilayers Journal of Physics D: Applied Physics. 49. DOI: 10.1088/0022-3727/49/14/145110  1
2016 Ryzhii V, Otsuji T, Ryzhii M, Leiman VG, Fedorov G, Goltzman GN, Gayduchenko IA, Titova N, Coquillat D, But D, Knap W, Mitin V, Shur MS. Two-dimensional plasmons in lateral carbon nanotube network structures and their effect on the terahertz radiation detection Journal of Applied Physics. 120: 44501. DOI: 10.1063/1.4959215  1
2016 Mickevičius J, Jurkevičius J, Kadys A, Tamulaitis G, Shur M, Shatalov M, Yang J, Gaska R. Temperature-dependent efficiency droop in AlGaN epitaxial layers and quantum wells Aip Advances. 6. DOI: 10.1063/1.4947574  1
2016 Podlipskas Ž, Aleksieju¯nas R, Nargelas S, Jurkevičius J, Mickevičius J, Kadys A, Tamulaitis G, Shur MS, Shatalov M, Yang J, Gaska R. Photomodification of carrier lifetime and diffusivity in AlGaN epitaxial layers Current Applied Physics. 16: 633-637. DOI: 10.1016/J.Cap.2016.03.010  1
2016 Sinha R, Karabiyik M, Ahmadivand A, Al-Amin C, Vabbina PK, Shur M, Pala N. Tunable, Room Temperature CMOS-Compatible THz Emitters Based on Nonlinear Mixing in Microdisk Resonators Journal of Infrared, Millimeter, and Terahertz Waves. 37: 230-242. DOI: 10.1007/S10762-015-0227-8  1
2016 Karabiyik M, Ahmadivand A, Sinha R, Al‐Amin C, Vabbina PK, Kaya S, Rupper G, Rudin S, Shur M, Pala N. Plasmonic properties of asymmetric dual grating gate plasmonic crystals (Phys. Status Solidi B 4/2016) Physica Status Solidi B-Basic Solid State Physics. 253: 605-605. DOI: 10.1002/Pssb.201670523  1
2016 Karabiyik M, Ahmadivand A, Sinha R, Al-Amin C, Vabbina PK, Kaya S, Rupper G, Rudin S, Shur M, Pala N. Plasmonic properties of asymmetric dual grating gate plasmonic crystals Physica Status Solidi (B) Basic Research. 253: 671-675. DOI: 10.1002/Pssb.201552609  1
2015 Saxena T, Shur M, Nargelas S, Podlipskas Ž, Aleksiejūnas R, Tamulaitis G, Shatalov M, Yang J, Gaska R. Dynamics of nonequilibrium carrier decay in AlGaN epitaxial layers with high aluminum content. Optics Express. 23: 19646-55. PMID 26367622 DOI: 10.1364/Oe.23.019646  1
2015 Rozhansky IV, Kachorovskii VY, Shur MS. Helicity-Driven Ratchet Effect Enhanced by Plasmons. Physical Review Letters. 114: 246601. PMID 26196993 DOI: 10.1103/PhysRevLett.114.246601  1
2015 Liu A, Khanna A, Dutta PS, Shur M. Red-blue-green solid state light sources using a narrow line-width green phosphor. Optics Express. 23: A309-15. PMID 25968796 DOI: 10.1364/Oe.23.00A309  1
2015 Rumyantsev S, Levinshtein M, Saxena T, Shur M, Cheng L, Palmour J. High current (1225A) optical triggering of 18-kV 4H-SiC thyristor in purely inductive load circuit Materials Science Forum. 821: 893-896. DOI: 10.4028/Www.Scientific.Net/Msf.821-823.893  1
2015 Rimeika R, Čiplys D, Shur M. Acousto-optic diffraction by shear horizontal surface acoustic waves in 36° rotated Y-cut X-propagation lithium tantalate Acta Physica Polonica A. 127: 52-54. DOI: 10.12693/Aphyspola.127.52  1
2015 Shur M. Plasmonic terahertz detectors Ecs Transactions. 66: 139-144. DOI: 10.1149/06607.0139ecst  1
2015 Shur M, Gaevski M, Gaska R, Simin G, Wong H, Braga N, Mickevicius RV. Power loss reduction in perforated-channel HFET switches Ecs Transactions. 66: 179-183. DOI: 10.1149/06601.0179ecst  1
2015 Yermolayev DM, Polushkin EA, Shapoval SY, Popov VV, Marem'yanin KV, Gavrilenko VI, Maleev NA, Ustinov VM, Zemlyakov VE, Yegorkin VI, Bespalov VA, Muravjov AV, Rumyantsev SL, Shur MS. Detection of Terahertz Radiation by Dense Arrays of InGaAs Transistors International Journal of High Speed Electronics and Systems. 24. DOI: 10.1142/S0129156415500020  1
2015 Shur M. Terahertz Sensing Technology International Journal of High Speed Electronics and Systems. 24. DOI: 10.1142/S0129156415500019  1
2015 Otsuji T, Dubinov A, Ryzhii M, Tombet SB, Satou A, Mitin V, Shur MS, Ryzhii V. Graphene active plasmonics for Terahertz device applications Proceedings of Spie - the International Society For Optical Engineering. 9476. DOI: 10.1117/12.2185118  1
2015 Shur M. Terahertz electronics for sensing and imaging applications Proceedings of Spie - the International Society For Optical Engineering. 9467. DOI: 10.1117/12.2085442  1
2015 Shatalov M, Jain R, Dobrinsky A, Sun W, Bilenko Y, Yang J, Shur M, Gaska R. High-efficiency UV LEDs on sapphire Proceedings of Spie - the International Society For Optical Engineering. 9363. DOI: 10.1117/12.2079874  1
2015 Otsuji T, Satou A, Watanabe T, Boubanga-Tombet SA, Ryzhii M, Dubinov A, Popov VV, Mitin V, Shur M, Ryzhii V. Recent advances in the research toward graphene-based terahertz lasers Proceedings of Spie - the International Society For Optical Engineering. 9382. DOI: 10.1117/12.2079411  1
2015 Chao PC, Chu K, Creamer C, Diaz J, Yurovchak T, Shur M, Kallaher R, McGray C, Via GD, Blevins JD. Low-Temperature Bonded GaN-on-Diamond HEMTs With 11 W/mm Output Power at 10 GHz Ieee Transactions On Electron Devices. DOI: 10.1109/Ted.2015.2480756  1
2015 Liu G, Rumyantsev SL, Jiang C, Shur MS, Balandin AA. Selective Gas Sensing with h-BN Capped MoS2 Heterostructure Thin-Film Transistors Ieee Electron Device Letters. 36: 1202-1204. DOI: 10.1109/Led.2015.2481388  1
2015 Rumyantsev SL, Jiang C, Samnakay R, Shur MS, Balandin AA. 1/f noise characteristics of MoS2 thin-film transistors: Comparison of single and multilayer structures Ieee Electron Device Letters. 36: 517-519. DOI: 10.1109/Led.2015.2412536  1
2015 Stolyarov MA, Liu G, Rumyantsev SL, Shur M, Balandin AA. Reduced 1/f noise in high-mobility BN-graphene-BN heterostructure transistors Device Research Conference - Conference Digest, Drc. 2015: 153-154. DOI: 10.1109/DRC.2015.7175601  1
2015 Ryzhii V, Otsuji T, Ryzhii M, Aleshkin VY, Dubinov AA, Svintsov D, Mitin V, Shur MS. Graphene vertical cascade interband terahertz and infrared photodetectors 2d Materials. 2. DOI: 10.1088/2053-1583/2/2/025002  1
2015 Coquillat D, Nodjiadjim V, Konczykowska A, Dyakonova N, Consejo C, Ruffenach S, Teppe F, Riet M, Muraviev A, Gutin A, Shur M, Godin J, Knap W. InP Double Heterojunction Bipolar Transistor for broadband terahertz detection and imaging systems Journal of Physics: Conference Series. 647. DOI: 10.1088/1742-6596/647/1/012036  1
2015 Mickevičius J, Jurkevičius J, Kadys A, Tamulaitis G, Shur M, Shatalov M, Yang J, Gaska R. Low-temperature redistribution of non-thermalized carriers and its effect on efficiency droop in AlGaN epilayers Journal of Physics D: Applied Physics. 48. DOI: 10.1088/0022-3727/48/27/275105  1
2015 Ryzhii V, Otsuji T, Ryzhii M, Mitin V, Shur MS. Resonant plasmonic terahertz detection in vertical graphene-base hot-electron transistors Journal of Applied Physics. 118. DOI: 10.1063/1.4936265  1
2015 Ryzhii V, Ryzhii M, Mitin V, Shur MS, Otsuji T. Negative terahertz conductivity in remotely doped graphene bilayer heterostructures Journal of Applied Physics. 118: 183105. DOI: 10.1063/1.4934856  1
2015 Saxena T, Nargelas S, Mickevičius J, Kravcov O, Tamulaitis G, Shur M, Shatalov M, Yang J, Gaska R. Spectral dependence of carrier lifetime in high aluminum content AlGaN epitaxial layers Journal of Applied Physics. 118. DOI: 10.1063/1.4929499  1
2015 Stolyarov MA, Liu G, Rumyantsev SL, Shur M, Balandin AA. Suppression of 1/ f noise in near-ballistic h -BN-graphene- h- BN heterostructure field-effect transistors Applied Physics Letters. 107. DOI: 10.1063/1.4926872  1
2015 Rudin S, Rupper G, Shur M. Ultimate response time of high electron mobility transistors Journal of Applied Physics. 117. DOI: 10.1063/1.4919706  1
2015 Ryzhii V, Otsuji T, Ryzhii M, Aleshkin Y, Dubinov AA, Mitin V, Shur MS. Vertical electron transport in van der Waals heterostructures with graphene layers Journal of Applied Physics. 117. DOI: 10.1063/1.4918313  1
2015 Siddiqua P, Hadi WA, Salhotra AK, Shur MS, O'Leary SK. Electron transport and electron energy distributions within the wurtzite and zinc-blende phases of indium nitride: Response to the application of a constant and uniform electric field Journal of Applied Physics. 117. DOI: 10.1063/1.4915329  1
2015 Svintsov D, Otsuji T, Mitin V, Shur MS, Ryzhii V. Negative terahertz conductivity in disordered graphene bilayers with population inversion Applied Physics Letters. 106. DOI: 10.1063/1.4915314  1
2015 Jiang C, Rumyantsev SL, Samnakay R, Shur MS, Balandin AA. High-temperature performance of MoS2 thin-film transistors: Direct current and pulse current-voltage characteristics Journal of Applied Physics. 117. DOI: 10.1063/1.4906496  1
2015 Samnakay R, Jiang C, Rumyantsev SL, Shur MS, Balandin AA. Selective chemical vapor sensing with few-layer MoS2 thin-film transistors: Comparison with graphene devices Applied Physics Letters. 106. DOI: 10.1063/1.4905694  1
2015 Rupper G, Rudin S, Shur M. Response of plasmonic terahertz detectors to amplitude modulated signals Solid-State Electronics. 111: 76-79. DOI: 10.1016/J.Sse.2015.05.035  1
2015 Gaska R, Gaevski M, Jain R, Deng J, Islam M, Simin G, Shur M. Novel AlInN/GaN integrated circuits operating up to 500 °C Solid-State Electronics. 113: 22-27. DOI: 10.1016/J.Sse.2015.05.007  1
2015 Gutin A, Ytterdal T, Muraviev A, Shur M. Modelling effect of parasitics in plasmonic FETs Solid-State Electronics. 104: 75-78. DOI: 10.1016/J.Sse.2014.10.013  1
2015 Rimeika R, Sereika R, Čiplys D, Bondarenka V, Sereika A, Shur M. Contactless monitoring of conductivity changes in vanadium pentoxide xerogel layers using surface acoustic waves Physics Procedia. 70: 135-138. DOI: 10.1016/J.Phpro.2015.08.061  1
2015 Rimeika R, Sereika A, Čiplys D, Sereika R, Bondarenka V, Shur M. Acoustoelectric investigation of V2O5·nH2O thin film transition from wet gel to xerogel Journal of Non-Crystalline Solids. 425: 24-27. DOI: 10.1016/J.Jnoncrysol.2015.05.029  1
2015 Mickevičius J, Podlipskas, Aleksiejūnas R, Kadys A, Jurkevičius J, Tamulaitis G, Shur MS, Shatalov M, Yang J, Gaska R. Nonradiative Recombination, Carrier Localization, and Emission Efficiency of AlGaN Epilayers with Different Al Content Journal of Electronic Materials. DOI: 10.1007/S11664-015-4132-7  1
2015 Siddiqua P, Hadi WA, Shur MS, O’Leary SK. A 2015 perspective on the nature of the steady-state and transient electron transport within the wurtzite phases of gallium nitride, aluminum nitride, indium nitride, and zinc oxide: a critical and retrospective review Journal of Materials Science: Materials in Electronics. 26: 4475-4512. DOI: 10.1007/s10854-015-3055-7  1
2015 Otsuji T, Ryzhii V, Tombet SB, Satou A, Ryzhii M, Popov VV, Knap W, Mitin V, Shur M. Terahertz wave generation using graphene and compound semiconductor nano-heterostructures Nanoscale Materials and Devices For Electronics, Photonics and Solar Energy. 237-261. DOI: 10.1007/978-3-319-18633-7_7  1
2015 Mickevičius J, Tamulaitis G, Jurkevičius J, Shur MS, Shatalov M, Yang J, Gaska R. Efficiency droop and carrier transport in AlGaN epilayers and heterostructures Physica Status Solidi (B) Basic Research. 252: 961-964. DOI: 10.1002/Pssb.201451542  1
2014 Tuzikas A, Žukauskas A, Vaicekauksas R, Petrulis A, Vitta P, Shur M. Artwork visualization using a solid-state lighting engine with controlled photochemical safety. Optics Express. 22: 16802-18. PMID 25090498 DOI: 10.1364/Oe.22.016802  1
2014 Mickevi?ius J, Jurkevi?ius J, Tamulaitis G, Shur MS, Shatalov M, Yang J, Gaska R. Influence of carrier localization on high-carrier-density effects in AlGaN quantum wells. Optics Express. 22: A491-7. PMID 24922258 DOI: 10.1364/Oe.22.00A491  1
2014 Rumyantsev S, Levinshtein M, Shur M, Cheng L, Agarwal AK, Palmour JW. Optical triggering of high current (1300 A), high-voltage (12 kV) 4H-SiC thyristor Materials Science Forum. 778: 1021-1024. DOI: 10.4028/Www.Scientific.Net/Msf.778-780.1021  1
2014 Saxena T, Rumyantsev S, Dutta P, Shur M. Tunable and wireless photoimpedance light sensor Materials Research Society Symposium Proceedings. 1666. DOI: 10.1557/Opl.2014.911  1
2014 Hadi WA, Baghani E, Shur MS, O'Leary SK. Electron transport within a zinc-oxide-based two-dimensional electron gas: The impact of variations in the electron effective mass Materials Research Society Symposium Proceedings. 1674. DOI: 10.1557/opl.2014.479  1
2014 Shur M, Simin G, Gaska R. New approaches to realizing high power nitride based field effect transistors Ecs Transactions. 64: 29-34. DOI: 10.1149/06417.0029ecst  1
2014 Shur M, Gaska R, Dobrinsky AD, Shatalov M. Deep ultraviolet light emitting diodes: Physics, performance, and applications Ecs Transactions. 61: 53-63. DOI: 10.1149/06104.0053ecst  1
2014 Gaska I, Bilenko O, Smetona S, Bilenko Y, Gaska R, Shur M. Deep UV LEDs for public health applications International Journal of High Speed Electronics and Systems. 23. DOI: 10.1142/S0129156414500189  1
2014 Otsuji T, Satou A, Tombet SB, Dubinov AA, Popov VV, Ryzhii V, Shur MS. Graphene active plasmonics for new types of terahertz lasers International Journal of High Speed Electronics and Systems. 23. DOI: 10.1142/S0129156414500165  1
2014 Saxena T, Rumyantsev S, Dutta P, Shur M. Frequency tunable photo-impedance sensor Proceedings of Spie - the International Society For Optical Engineering. 9220. DOI: 10.1117/12.2062457  1
2014 Liu A, Sandipan M, Shur M. LED illuminant on the ambient light Proceedings of Spie - the International Society For Optical Engineering. 9190. DOI: 10.1117/12.2062270  1
2014 Otsuji T, Ryzhii V, Tombet SAB, Watanabe T, Satou A, Ryzhii M, Dubinov A, Aleshkin VY, Popov V, Mitin V, Shur M. Graphene plasmonic heterostructures for new types of terahertz lasers Proceedings of Spie - the International Society For Optical Engineering. 9199. DOI: 10.1117/12.2061510  1
2014 Karabiyik M, Sinha R, Al-Amin C, Dyer GC, Pala N, Shur MS. Dispersion studies in THz plasmonic devices with cavities Proceedings of Spie - the International Society For Optical Engineering. 9102. DOI: 10.1117/12.2053447  1
2014 Sinha R, Karabiyik M, Al-Amin C, Vabbina PK, Shur M, Pala N. Microdisk resonators for difference frequency generation in THz range Proceedings of Spie - the International Society For Optical Engineering. 9102. DOI: 10.1117/12.2050650  1
2014 Mitin V, Ryzhii V, Otsuji T, Ryzhii M, Shur MS. Double graphene-layer structures for adaptive devices Proceedings of Spie - the International Society For Optical Engineering. 9083. DOI: 10.1117/12.2050218  1
2014 Nahar S, Gutin A, Muraviev A, Wilke I, Shur M, Hella MM. Terahertz detection using on chip patch and dipole antenna-coupled GaAs High Electron Mobility Transistors Ieee Mtt-S International Microwave Symposium Digest. DOI: 10.1109/MWSYM.2014.6848475  1
2014 Otsuji T, Shur M. Terahertz plasmonics Ieee Microwave Magazine. 15: 43-50. DOI: 10.1109/Mmm.2014.2355712  1
2014 Otsuji T, Satou A, Tombet SB, Ryzhii V, Popov VV, Shur MS. Graphene plasmonic heterostructures for terahertz device applications Proceedings - 2014 International Conference Laser Optics, Lo 2014. DOI: 10.1109/LO.2014.6886421  1
2014 Simin GS, Islam M, Gaevski M, Deng J, Gaska R, Shur MS. Low RC-constant perforated-channel HFET Ieee Electron Device Letters. 35: 449-451. DOI: 10.1109/Led.2014.2304726  1
2014 Otsuji T, Alshkin VY, Dubinov AA, Ryzhii M, Mitin V, Shur MS, Ryzhii V. S7-N2: Terahertz lasing and detection in double-graphene-layer structures Lester Eastman Conference 2014 - High Performance Devices, Lec 2014. DOI: 10.1109/LEC.2014.6951573  1
2014 Gutin A, Muraviev AV, Kamaraju N, Shen X, Yamaguchi Y, Shur MS, But D, Dyakonova N, Knap W, Rudin S, Rupper G. Application of plasma-wave detectors for ultra-short pulse terahertz radiation International Conference On Infrared, Millimeter, and Terahertz Waves, Irmmw-Thz. DOI: 10.1109/IRMMW-THz.2014.6956460  1
2014 Čiplys D, Rimeika R, Monereo O, Xuriguera E, Varea A, Cirera A, Shur M. Sub-second humidity sensing using surface acoustic waves in electrospray-deposited carbon nanofiber and reduced graphene oxide structures Proceedings of Ieee Sensors. 2014: 110-113. DOI: 10.1109/ICSENS.2014.6984945  1
2014 Shur M, Rumyantsev S, Jiang C, Samnakay R, Renteria J, Balandin AA. Selective gas sensing with MoS2 Thin Film Transistors Proceedings of Ieee Sensors. 2014: 55-57. DOI: 10.1109/ICSENS.2014.6984931  1
2014 Otsuji T, Aleshkin VY, Dubinov AA, Ryzhii M, Mitin V, Shur MS, Ryzhii V. Terahertz emission and detection in double-graphene-layer structures Device Research Conference - Conference Digest, Drc. 159-160. DOI: 10.1109/DRC.2014.6872346  1
2014 Ryzhii M, Shur MS, Mitin V, Satou A, Ryzhii V, Otsuji T. Plasma resonant terahertz photomixers based on double graphene layer structures Journal of Physics: Conference Series. 486. DOI: 10.1088/1742-6596/486/1/012032  1
2014 Mitin V, Pogrebnyak V, Shur M, Gaska R, Karasik B, Sergeev A. Hot-electron micro & nanobolometers based on low-mobility 2DEG for high resolution THz spectroscopy Journal of Physics: Conference Series. 486. DOI: 10.1088/1742-6596/486/1/012028  1
2014 Shur M. AlGaN/GaN plasmonic terahertz electronic devices Journal of Physics: Conference Series. 486. DOI: 10.1088/1742-6596/486/1/012025  1
2014 Yermolaev DM, Polushkin YA, Zemlyakov VE, Maleev NA, Popov VV, Muravjov AV, Rumyantsev SL, Shur MS, Shapoval SY. Investigation of wide-aperture plasmonic detectors by a tightly focused terahertz beam Journal of Physics: Conference Series. 486. DOI: 10.1088/1742-6596/486/1/012013  1
2014 Shatalov M, Sun W, Jain R, Lunev A, Hu X, Dobrinsky A, Bilenko Y, Yang J, Garrett GA, Rodak LE, Wraback M, Shur M, Gaska R. High power AlGaN ultraviolet light emitters Semiconductor Science and Technology. 29. DOI: 10.1088/0268-1242/29/8/084007  1
2014 Saxena T, Rumyantsev SL, Dutta PS, Shur M. CdS based novel photo-impedance light sensor Semiconductor Science and Technology. 29. DOI: 10.1088/0268-1242/29/2/025002  1
2014 Rumyantsev SL, Levinshtein ME, Saxena T, Shur MS, Cheng L, Palmour JW, Agarwal A. Optical triggering of 4H-SiC thyristors (18 kV class) to high currents in purely inductive load circuit Semiconductor Science and Technology. 29. DOI: 10.1088/0268-1242/29/11/115003  1
2014 Svintsov D, Leiman VG, Ryzhii V, Otsuji T, Shur MS. Graphene nanoelectromechanical resonators for the detection of modulated terahertz radiation Journal of Physics D: Applied Physics. 47. DOI: 10.1088/0022-3727/47/50/505105  1
2014 Marcinkevičius S, Jain R, Shatalov M, Yang J, Shur M, Gaska R. High spectral uniformity of AlGaN with a high Al content evidenced by scanning near-field photoluminescence spectroscopy Applied Physics Letters. 105. DOI: 10.1063/1.4904710  1
2014 Ryzhii V, Satou A, Otsuji T, Ryzhii M, Mitin V, Shur MS. Graphene vertical hot-electron terahertz detectors Journal of Applied Physics. 116: 114504. DOI: 10.1063/1.4895738  1
2014 Ryzhii V, Otsuji T, Aleshkin VY, Dubinov AA, Ryzhii M, Mitin V, Shur MS. Voltage-tunable terahertz and infrared photodetectors based on double-graphene-layer structures Applied Physics Letters. 104. DOI: 10.1063/1.4873114  1
2014 Renteria J, Samnakay R, Rumyantsev SL, Jiang C, Goli P, Shur MS, Balandin AA. Low-frequency 1/f noise in MoS2 transistors: Relative contributions of the channel and contacts Applied Physics Letters. 104. DOI: 10.1063/1.4871374  1
2014 Dubinov AA, Aleshkin VY, Ryzhii V, Shur MS, Otsuji T. Surface-plasmons lasing in double-graphene-layer structures Journal of Applied Physics. 115. DOI: 10.1063/1.4863797  1
2014 Rudin S, Rupper G, Gutin A, Shur M. Theory and measurement of plasmonic terahertz detector response to large signals Journal of Applied Physics. 115. DOI: 10.1063/1.4862808  1
2014 Tamulaitis G, Mickevičius J, Jurkevičius J, Shur MS, Shatalov M, Yang J, Gaska R. Photoluminescence efficiency in AlGaN quantum wells Physica B: Condensed Matter. 453: 40-42. DOI: 10.1016/J.Physb.2013.12.019  1
2014 Hadi WA, Shur MS, O’Leary SK. Steady-state and transient electron transport within the wide energy gap compound semiconductors gallium nitride and zinc oxide: an updated and critical review Journal of Materials Science: Materials in Electronics. 25: 4675-4713. DOI: 10.1007/s10854-014-2226-2  1
2014 Gaevski M, Deng J, Gaska R, Shur M, Simin G. GaN microwave varactors with insulated electrodes Physica Status Solidi (C) Current Topics in Solid State Physics. 11: 853-856. DOI: 10.1002/Pssc.201300667  1
2014 Gaevski M, Deng J, Dobrinsky A, Gaska R, Shur M, Simin G. Static and transient characteristics of GaN power HFETs with low-conducting coating Physica Status Solidi (C) Current Topics in Solid State Physics. 11: 866-870. DOI: 10.1002/Pssc.201300541  1
2014 Vabbina PK, Karabiyik M, Al-Amin C, Pala N, Das S, Choi W, Saxena T, Shur M. Controlled synthesis of single-crystalline Zno nanoflakes on arbitrary substrates at ambient conditions Particle and Particle Systems Characterization. 31: 190-194. DOI: 10.1002/Ppsc.201300208  1
2014 Turin V, Zebrev G, Makarov S, Iñiguez B, Shur M. The correct account of nonzero differential conductance in the saturation regime in the MOSFET compact model International Journal of Numerical Modelling: Electronic Networks, Devices and Fields. 27: 863-874. DOI: 10.1002/Jnm.1969  1
2013 Ryzhii V, Dubinov AA, Otsuji T, Aleshkin VY, Ryzhii M, Shur M. Double-graphene-layer terahertz laser: concept, characteristics, and comparison. Optics Express. 21: 31567-77. PMID 24514730 DOI: 10.1364/Oe.21.031567  1
2013 Žukauskas A, Vaicekauskas R, Vitta P, Zabili?t? A, Petrulis A, Shur M. Color rendition engineering of phosphor-converted light-emitting diodes. Optics Express. 21: 26642-56. PMID 24216885 DOI: 10.1364/Oe.21.026642  1
2013 Knap W, Rumyantsev S, Vitiello MS, Coquillat D, Blin S, Dyakonova N, Shur M, Teppe F, Tredicucci A, Nagatsuma T. Nanometer size field effect transistors for terahertz detectors. Nanotechnology. 24: 214002. PMID 23618776 DOI: 10.1088/0957-4484/24/21/214002  1
2013 Rumyantsev SL, Levinshtein ME, Shur MS, Saxena T, Zhang QJ, Agarwal AK, Cheng L, Palmour JW. Optical triggering of 12 kv, 1 cm2 4H-SiC thyristors Materials Science Forum. 740: 990-993. DOI: 10.4028/www.scientific.net/MSF.740-742.990  1
2013 Každailis P, Giriuniene R, Rimeika R, Čiplys D, Šliužiene K, Lisauskas V, Vengalis B, Shur MS. Surface acoustic wave propagation in lanthanum strontium manganese oxide - Lithium niobate structures Acta Acustica United With Acustica. 99: 493-497. DOI: 10.3813/AAA.918629  1
2013 Hadi WA, Baghani E, Shur MS, O'Leary SK. Electron transport within the two-dimensional electron gas formed at a ZnO/ZnMgO heterojunction: Recent progress Materials Research Society Symposium Proceedings. 1577: 36-41. DOI: 10.1557/opl.2013.649  1
2013 Hadi WA, Shur MS, O'Leary SK. Steady-state and transient electron transport within bulk wurtzite zinc oxide and the resultant electron device performance Materials Research Society Symposium Proceedings. 1577: 13-18. DOI: 10.1557/opl.2013.535  1
2013 Hadi WA, Shur MS, O'Leary SK. The electron transport within bulk wurtzite zinc oxide in response to strong applied electric field pulses Materials Research Society Symposium Proceedings. 1577: 7-12. DOI: 10.1557/opl.2013.534  1
2013 Žukauskas A, Vaicekauskas R, Vitta P, Zabiliute A, Petrulis A, Shur M. Color rendition engineering of phosphorconverted light-emitting diodes Optics Express. 21: 26642-26656. DOI: 10.1364/OE.21.026642  1
2013 Dobrinsky A, Simin G, Gaska R, Shur M. III-nitride materials and devices for power electronics Ecs Transactions. 58: 129-143. DOI: 10.1149/05804.0129ecst  1
2013 Liu A, Tuzikas A, Žukauskas A, Vaicekauskas R, Vitta P, Shur M. Color preferences revealed by statistical color rendition metric Proceedings of Spie - the International Society For Optical Engineering. 8835. DOI: 10.1117/12.2026688  1
2013 But DB, Diakonova N, Drexler C, Drachenko O, Romanov K, Golenkov OG, Sizov FF, Gutin A, Shur M, Ganichev SD, Knap W. The dynamic range of THz broadband FET detectors Proceedings of Spie - the International Society For Optical Engineering. 8846. DOI: 10.1117/12.2024226  1
2013 Rudin S, Rupper G, Gutin A, Shur M. Response of plasmonic terahertz detector to large signals: Theory and experiment Proceedings of Spie - the International Society For Optical Engineering. 8716. DOI: 10.1117/12.2015330  1
2013 Gutin A, Nahar S, Hella M, Shur M. Modeling terahertz plasmonic Si FETs with SPICE Ieee Transactions On Terahertz Science and Technology. 3: 545-549. DOI: 10.1109/Tthz.2013.2262799  1
2013 Jahan F, Yang YH, Gaevski M, Deng J, Gaska R, Shur M, Simin G. 2-to 20-GHz switch using III-nitride capacitively coupled contact varactors Ieee Electron Device Letters. 34: 208-210. DOI: 10.1109/Led.2012.2231396  1
2013 Rumyantsev S, Liu G, Potyrailo RA, Balandin AA, Shur MS. Selective sensing of individual gases using graphene devices Ieee Sensors Journal. 13: 2818-2822. DOI: 10.1109/Jsen.2013.2251627  1
2013 Hindle F, Shur M, Abbot D, Ozanyan KB. Guest Editorial: THz sensing: Materials, devices, and systems Ieee Sensors Journal. 13: 7. DOI: 10.1109/Jsen.2012.2226647  1
2013 Choi JK, Mitin V, Ramaswamy R, Pogrebnyak VA, Pakmehr MP, Muravjov A, Shur MS, Gill J, Mehdi I, Karasik BS, Sergeev AV. THz Hot-Electron Micro-Bolometer Based on Low-Mobility 2-DEG in GaN Heterostructure Ieee Sensors Journal. 13: 80-88. DOI: 10.1109/Jsen.2012.2224334  1
2013 Gutin A, Ytterdal T, Kachorovskii V, Muraviev A, Shur M. THz SPICE for modeling detectors and nonquadratic response at large input signal Ieee Sensors Journal. 13: 55-62. DOI: 10.1109/Jsen.2012.2224105  1
2013 Liu A, Tuzikas A, Žukauskas A, Vaicekauskas R, Vitta P, Shur M. Cultural preferences to color quality of illumination of different artwork objects revealed by a color rendition engine Ieee Photonics Journal. 5. DOI: 10.1109/Jphot.2013.2276742  1
2013 Popov VV, Polischuk OV, Davoyan AR, Ryzhii V, Otsuji T, Shur MS. Amplification of terahertz radiation by stimulated emission of plasmons in graphene International Conference On Infrared, Millimeter, and Terahertz Waves, Irmmw-Thz. DOI: 10.1109/IRMMW-THz.2013.6665560  1
2013 Wu P, Shur M, Huang ZR. High-speed stacked tunneling PiN electro-optical modulators 2013 Ieee Photonics Conference, Ipc 2013. 42-43. DOI: 10.1109/IPCon.2013.6656357  1
2013 Shur M, Muraviev AV, Rumyantsev SL, Knap W, Liu G, Balandin AA. Plasmonic and bolometric terahertz graphene sensors Ieee Sensors 2013 - Proceedings. DOI: 10.1109/ICSENS.2013.6688554  1
2013 Liu G, Rumyantsev SL, Balandin AA, Shur MS. Surface and volume 1/f noise in multi-layer graphene 2013 22nd International Conference On Noise and Fluctuations, Icnf 2013. DOI: 10.1109/ICNF.2013.6578991  1
2013 Fobelets K, Ahmad MM, Roumyantsev S, Shur M. Influence of ambient on conductivity and 1/f noise in Si nanowire arrays 2013 22nd International Conference On Noise and Fluctuations, Icnf 2013. DOI: 10.1109/ICNF.2013.6578923  1
2013 Gaska R, Simin G, Shur M. AlGaN/GaN HEMTs for energy efficient systems 2013 Ieee Energytech, Energytech 2013. DOI: 10.1109/EnergyTech.2013.6645294  1
2013 Jahan F, Yang YH, Gaevski M, Deng J, Gaska R, Shur M, Simin G. High-performance RF components using capacitively-coupled contacts over III-N heterostructures Proceedings - Electronic Components and Technology Conference. 2002-2005. DOI: 10.1109/ECTC.2013.6575853  1
2013 Shatalov M, Yang J, Bilenko Y, Shur M, Gaska R. AlGaN deep ultraviolet LEDs with external quantum efficiency over 10% Pacific Rim Conference On Lasers and Electro-Optics, Cleo - Technical Digest. DOI: 10.1109/CLEOPR.2013.6599920  1
2013 Polischuk OV, Popov VV, Nikitov SA, Ryzhii V, Otsuji T, Shur MS. Amplification of terahertz radiation by plasmons in graphene with a planar Bragg grating Proceedings of the International Conference On Advanced Optoelectronics and Lasers, Caol. 192-194. DOI: 10.1109/CAOL.2013.6657574  1
2013 Popov VV, Polischuk OV, Nikitov SA, Ryzhii V, Otsuji T, Shur MS. Amplification and lasing of terahertz radiation by plasmons in graphene with a planar distributed Bragg resonator Journal of Optics (United Kingdom). 15. DOI: 10.1088/2040-8978/15/11/114009  1
2013 Simin G, Jahan F, Yang J, Gaevski M, Hu X, Deng J, Gaska R, Shur M. III-nitride microwave control devices and ICs Semiconductor Science and Technology. 28. DOI: 10.1088/0268-1242/28/7/074008  1
2013 Rumyantsev SL, Levinshtein ME, Shur MS, Cheng L, Agarwal AK, Palmour JW. High current (1300 A) optical triggering of a 12 kV 4H-SiC thyristor Semiconductor Science and Technology. 28. DOI: 10.1088/0268-1242/28/4/045016  1
2013 Rumyantsev SL, Levinshtein ME, Shur MS, Cheng L, Agarwal AK, Palmour JW. Optical triggering of high-voltage (18 kV-class) 4H-SiC thyristors Semiconductor Science and Technology. 28. DOI: 10.1088/0268-1242/28/12/125017  1
2013 Levinshtein ME, Rumyantsev SL, Shur MS, Mnatsakanov TT, Yurkov SN, Zhang QJ, Agarwal AK, Cheng L, Palmour JW. Holding current and switch-on mechanisms in 12 kV, 100 A 4H-SiC optically triggered thyristors Semiconductor Science and Technology. 28. DOI: 10.1088/0268-1242/28/1/015008  1
2013 Ryzhii V, Otsuji T, Ryzhii M, Ryabova N, Yurchenko SO, Mitin V, Shur MS. Graphene terahertz uncooled bolometers Journal of Physics D: Applied Physics. 46. DOI: 10.1088/0022-3727/46/6/065102  1
2013 Ryzhii V, Satou A, Otsuji T, Ryzhii M, Mitin V, Shur MS. Dynamic effects in double graphene-layer structures with inter-layer resonant-tunnelling negative conductivity Journal of Physics D: Applied Physics. 46. DOI: 10.1088/0022-3727/46/31/315107  1
2013 Saxena T, Tamulaitis G, Shatalov M, Yang J, Gaska R, Shur MS. Low threshold for optical damage in AlGaN epilayers and heterostructures Journal of Applied Physics. 114. DOI: 10.1063/1.4834520  1
2013 Rumyantsev SL, Coquillat D, Ribeiro R, Goiran M, Knap W, Shur MS, Balandin AA, Levinshtein ME. The effect of a transverse magnetic field on 1/f noise in graphene Applied Physics Letters. 103. DOI: 10.1063/1.4826644  1
2013 Muraviev AV, Rumyantsev SL, Liu G, Balandin AA, Knap W, Shur MS. Plasmonic and bolometric terahertz detection by graphene field-effect transistor Applied Physics Letters. 103. DOI: 10.1063/1.4826139  1
2013 Mickevičius J, Tamulaitis G, Shur M, Shatalov M, Yang J, Gaska R. Correlation between carrier localization and efficiency droop in AlGaN epilayers Applied Physics Letters. 103. DOI: 10.1063/1.4813259  1
2013 Kachorovskii VY, Rumyantsev SL, Knap W, Shur M. Performance limits for field effect transistors as terahertz detectors Applied Physics Letters. 102. DOI: 10.1063/1.4809672  1
2013 Ryzhii V, Ryzhii M, Mitin V, Shur MS, Satou A, Otsuji T. Terahertz photomixing using plasma resonances in double-graphene layer structures Journal of Applied Physics. 113. DOI: 10.1063/1.4804063  1
2013 Hossain MZ, Rumyantsev S, Shur MS, Balandin AA. Reduction of 1/f noise in graphene after electron-beam irradiation Applied Physics Letters. 102. DOI: 10.1063/1.4802759  1
2013 Yan X, Shatalov M, Saxena T, Shur MS. Deep-ultraviolet tailored- and low-refractive index antireflection coatings for light-extraction enhancement of light emitting diodes Journal of Applied Physics. 113. DOI: 10.1063/1.4802663  1
2013 Hadi WA, Guram PK, Shur MS, O'Leary SK. Steady-state and transient electron transport within wurtzite and zinc-blende indium nitride Journal of Applied Physics. 113. DOI: 10.1063/1.4795146  1
2013 Liu G, Rumyantsev S, Shur MS, Balandin AA. Origin of 1/f noise in graphene multilayers: Surface vs. volume Applied Physics Letters. 102. DOI: 10.1063/1.4794843  1
2013 Hadi WA, Shur MS, O'Leary SK. On the applicability of a semi-analytical approach to determining the transient electron transport response of gallium arsenide, gallium nitride, and zinc oxide Journal of Materials Science: Materials in Electronics. 24: 1624-1634. DOI: 10.1007/s10854-012-0986-0  1
2013 Hadi WA, Cheekoori R, Shur MS, O'Leary SK. Transient electron transport in the III-V compound semiconductors gallium arsenide and gallium nitride Journal of Materials Science: Materials in Electronics. 24: 807-813. DOI: 10.1007/s10854-012-0818-2  1
2013 Hadi WA, Shur MS, O'Leary SK. The sensitivity of the steady-state and transient electron transport within bulk wurtzite zinc oxide to variations in the crystal temperature, the doping concentration, and the non-parabolicity coefficient Journal of Materials Science: Materials in Electronics. 24: 2-12. DOI: 10.1007/s10854-012-0782-x  1
2013 Marcinkevičius S, Liuolia V, Billingsley D, Shatalov M, Yang J, Gaska R, Shur MS. Carrier dynamics and localization in AlInN/GaN heterostructures Physica Status Solidi (C) Current Topics in Solid State Physics. 10: 853-856. DOI: 10.1002/Pssc.201200599  1
2013 Dmitriev A, Shur M. Lateral modulation doping of two-dimensional electron or hole gas Physica Status Solidi (B) Basic Research. 250: 318-323. DOI: 10.1002/Pssb.201248222  1
2012 Chivukula VS, Ciplys D, Kim JH, Rimeika R, Xu JM, Shur MS. Surface acoustic wave response to optical absorption by graphene composite film. Ieee Transactions On Ultrasonics, Ferroelectrics, and Frequency Control. 59: 265-70. PMID 24626034 DOI: 10.1109/TUFFC.2012.2186  1
2012 Corr SJ, Raoof M, Mackeyev Y, Phounsavath S, Cheney MA, Cisneros BT, Shur M, Gozin M, McNally PJ, Wilson LJ, Curley SA. Citrate-capped gold nanoparticle electrophoretic heat production in response to a time-varying radiofrequency electric-field. The Journal of Physical Chemistry. C, Nanomaterials and Interfaces. 116: 24380-24389. PMID 23795228 DOI: 10.1021/Jp309053Z  1
2012 Mickevi?ius J, Jurkevi?ius J, Shur MS, Yang J, Gaska R, Tamulaitis G. Photoluminescence efficiency droop and stimulated recombination in GaN epilayers. Optics Express. 20: 25195-200. PMID 23187336 DOI: 10.1364/Oe.20.025195  1
2012 Žukauskas A, Vaicekauskas R, Shur M. Color-dulling solid-state sources of light. Optics Express. 20: 9755-62. PMID 22535067 DOI: 10.1364/Oe.20.009755  1
2012 Rumyantsev S, Liu G, Shur MS, Potyrailo RA, Balandin AA. Selective gas sensing with a single pristine graphene transistor. Nano Letters. 12: 2294-8. PMID 22506589 DOI: 10.1021/Nl3001293  1
2012 Zukauskas A, Vaicekauskas R, Vitta P, Tuzikas A, Petrulis A, Shur M. Color rendition engine. Optics Express. 20: 5356-67. PMID 22418343 DOI: 10.1364/OE.20.005356  1
2012 Popov VV, Pala N, Shur MS. Room temperature terahertz plasmonic detection by antenna arrays of field-effect transistors Nanoscience and Nanotechnology Letters. 4: 1015-1022. DOI: 10.1166/Nnl.2012.1442  1
2012 Shur M. Physics of GaN-based power field effect transistors Ecs Transactions. 50: 129-138. DOI: 10.1149/05003.0129ecst  1
2012 Shatalov M, Sun W, Lunev A, Hu X, Dobrinsky A, Bilenko Y, Yang J, Shur M, Gaska R, Moe C, Garrett G, Wraback M. AlGaN deep-ultraviolet light-emitting diodes with external quantum efficiency above 10% Applied Physics Express. 5. DOI: 10.1143/Apex.5.082101  1
2012 Shatalov M, Lunev A, Hu X, Bilenko O, Gaska I, Sun W, Yang J, Dobrinsky A, Bilenko Y, Gaska R, Shur M. Performance and applications of deep UV LED International Journal of High Speed Electronics and Systems. 21. DOI: 10.1142/S0129156412500115  1
2012 Mitin V, Ramaswamy R, Wang K, Choi JK, Pakmehr M, Muraviev A, Shur M, Gaska R, Pogrebnyak V, Sergeev A. THz detectors based on heating of two-dimensional electron gas in disordered nitride heterostructures Proceedings of Spie - the International Society For Optical Engineering. 8363. DOI: 10.1117/12.919267  1
2012 Balandin AA, Rumyantsev S, Liu G, Shur MS, Potyrailo RA. Selective gas sensing with a single graphene-on-silicon transistor 2012 Ieee Silicon Nanoelectronics Workshop, Snw 2012. DOI: 10.1109/SNW.2012.6243283  1
2012 Dobrinsky A, Shatalov M, Gaska R, Shur M. Physics of visible and UV LED devices 2012 Lester Eastman Conference On High Performance Devices, Lec 2012. DOI: 10.1109/lec.2012.6410995  1
2012 Gutin A, Muraviev A, Shur M, Kachorovskii V, Ytterdal T. Large signal analytical and SPICE model of THz plasmonic FET 2012 Lester Eastman Conference On High Performance Devices, Lec 2012. DOI: 10.1109/lec.2012.6410980  1
2012 Rumyantsev S, Liu G, Potyrailo RA, Balandin AA, Shur MS. Selective gas sensing by graphene Proceedings of Ieee Sensors. DOI: 10.1109/ICSENS.2012.6411434  1
2012 Shatalov M, Sun W, Lunev A, Hu X, Dobrinsky A, Bilenko Y, Yang J, Shur M, Gaska R, Moe C, Garrett G, Wraback M. 278 nm deep ultraviolet LEDs with 11% external quantum efficiency Device Research Conference - Conference Digest, Drc. 255-256. DOI: 10.1109/DRC.2012.6257013  1
2012 Popov VV, Polischuk OV, Davoyan AR, Ryzhii V, Otsuji T, Shur MS. Plasmonic terahertz lasing in an array of graphene nanocavities Physical Review B - Condensed Matter and Materials Physics. 86. DOI: 10.1103/Physrevb.86.195437  1
2012 Rumyantsev SL, Levinshtein ME, Shur MS, Saxena T, Zhang QJ, Agarwal AK, Palmour JW. Optical triggering of 12 kV, 100 A 4H-SiC thyristors Semiconductor Science and Technology. 27. DOI: 10.1088/0268-1242/27/1/015012  1
2012 Wu J, Palai R, Jadwisienczak WM, Shur MS. Bandgap engineering in MBE grown Al 1-xGa xN epitaxial columnar nanostructures Journal of Physics D: Applied Physics. 45. DOI: 10.1088/0022-3727/45/1/015104  1
2012 Hadi WA, Chowdhury S, Shur MS, O'Leary SK. A detailed characterization of the transient electron transport within zinc oxide, gallium nitride, and gallium arsenide Journal of Applied Physics. 112. DOI: 10.1063/1.4771679  1
2012 Marcinkevičius S, Liuolia V, Billingsley D, Shatalov M, Yang J, Gaska R, Shur MS. Transient photoreflectance of AlInN/GaN heterostructures Aip Advances. 2. DOI: 10.1063/1.4768670  1
2012 Mickevičius J, Tamulaitis G, Shur M, Shatalov M, Yang J, Gaska R. Internal quantum efficiency in AlGaN with strong carrier localization Applied Physics Letters. 101. DOI: 10.1063/1.4767657  1
2012 Ryzhii V, Otsuji T, Ryzhii M, Leiman VG, Yurchenko SO, Mitin V, Shur MS. Effect of plasma resonances on dynamic characteristics of double graphene-layer optical modulator Journal of Applied Physics. 112. DOI: 10.1063/1.4766814  1
2012 Mickevičius J, Jurkevičius J, Kazlauskas K, Žukauskas A, Tamulaitis G, Shur MS, Shatalov M, Yang J, Gaska R. Stimulated emission due to localized and delocalized carriers in Al 0.35Ga 0.65N/Al 0.49Ga 0.51N quantum wells Applied Physics Letters. 101. DOI: 10.1063/1.4738791  1
2012 Liuolia V, Marcinkevičius S, Billingsley D, Shatalov M, Yang J, Gaska R, Shur MS. Photoexcited carrier dynamics in AlInN/GaN heterostructures Applied Physics Letters. 100. DOI: 10.1063/1.4729033  1
2012 Mickevičius J, Jurkevičius J, Kazlauskas K, Žukauskas A, Tamulaitis G, Shur MS, Shatalov M, Yang J, Gaska R. Stimulated emission in AlGaN/AlGaN quantum wells with different Al content Applied Physics Letters. 100. DOI: 10.1063/1.3688051  1
2012 Jahan F, Gaevski M, Deng J, Gaska R, Shur M, Simin G. RF power limiter using capacitively-coupled contacts III-nitride varactor Electronics Letters. 48: 1480-1481. DOI: 10.1049/El.2012.3428  1
2012 Pinos A, Marcinkevičius S, Liuolia V, Yang J, Gaska R, Shur MS. Scanning near-field optical spectroscopy of AlGaN epitaxial layers Physica Status Solidi (C) Current Topics in Solid State Physics. 9: 1617-1620. DOI: 10.1002/Pssc.201100570  1
2012 Tamulaitis G, Mickevičius J, Dobrovolskas D, Kuokštis E, Shur MS, Shatalov M, Yang J, Gaska R. Carrier dynamics and efficiency droop in AlGaN epilayers with different Al content Physica Status Solidi (C) Current Topics in Solid State Physics. 9: 1677-1679. DOI: 10.1002/Pssc.201100550  1
2011 Hossain MZ, Rumyantsev SL, Shahil KM, Teweldebrhan D, Shur M, Balandin AA. Low-frequency current fluctuations in "graphene-like" exfoliated thin-films of bismuth selenide topological insulators. Acs Nano. 5: 2657-63. PMID 21413716 DOI: 10.1021/Nn102861D  1
2011 Hadi WA, Shur M, Eastman LF, O'Leary SK. Steady-state and transient electron transport in ZnO: Recent progress Materials Research Society Symposium Proceedings. 1327: 1-6. DOI: 10.1557/Opl.2011.851  1
2011 Bhalerao S, Koudymov A, Shur M, Ytterdal T, Jackson W, Taussig C. Compact capacitance model for printed thin film transistors with non-ideal contacts International Journal of High Speed Electronics and Systems. 20: 801-813. DOI: 10.1142/S0129156411007069  1
2011 Simin G, Wang J, Khan B, Yang J, Sattu A, Gaska R, Shur M. Novel approaches to microwave switching devices using nitride technology International Journal of High Speed Electronics and Systems. 20: 219-227. DOI: 10.1142/S0129156411006556  1
2011 Rumyantsev S, Stillman W, Shur M, Heeg T, Schlom DG, Koveshnikov S, Kambhampati R, Tokranov V, Oktyabrsky S. Low frequency noise and interface density of traps in InGaAs MOSFETs with GdScO3 high-K dielectric International Journal of High Speed Electronics and Systems. 20: 105-113. DOI: 10.1142/S0129156411006441  1
2011 Stillman W, Donais C, Rumyantsev S, Shur M, Veksler D, Hobbs C, Smith C, Bersuker G, Taylor W, Jammy R. Silicon finfets as detectors of terahertz and sub-terahertz radiation International Journal of High Speed Electronics and Systems. 20: 27-42. DOI: 10.1142/S0129156411006374  1
2011 Wetzel C, Xia Y, Zhao W, Li Y, Zhu M, You S, Zhao L, Hou W, Stark C, Dibiccari M, Liu K, Shur MS, Garrett GA, Wraback M, Detchprohm T. How do we lose excitation in the green? International Journal of High Speed Electronics and Systems. 20: 13-25. DOI: 10.1142/S0129156411006362  1
2011 Žukauskas A, Vaicekauskas R, Tuzikas A, Vitta P, Shur M. Statistical approach to color rendition properties of solid state light sources Proceedings of Spie. 8123. DOI: 10.1117/12.893246  1
2011 Ramaswamy R, Wang K, Stier A, Muraviev A, Strasser G, Markelz A, Shur M, Gaska R, Sergeev A, Mitin V. 2DEG GaN hot electron microbolometers and quantum cascade lasers for THz heterodyne sensing Proceedings of Spie - the International Society For Optical Engineering. 8031. DOI: 10.1117/12.883329  1
2011 Shur M. Silicon and nitride FETs for THz sensing Proceedings of Spie. 8031. DOI: 10.1117/12.883309  0.01
2011 Sattu AK, Yang J, Gaska R, Khan MB, Shur M, Simin G. Small- and large-signal performance of III-nitride RF switches with hybrid fast/slow gate design Ieee Microwave and Wireless Components Letters. 21: 305-307. DOI: 10.1109/Lmwc.2011.2138686  1
2011 Sattu A, Deng J, Billingsley D, Yang J, Shur M, Gaska R, Simin G. Enhanced power and breakdown in III-N RF switches with a slow gate Ieee Electron Device Letters. 32: 749-751. DOI: 10.1109/Led.2011.2126557  1
2011 Nogajewski K, Karpierz K, Grynberg M, Knap W, Gaska R, Yang J, Shur MS, Łusakowski J. Magnetooptical studies of resonant plasma excitations in grating-gate GaN/AlGaN-based field-effect transistors Irmmw-Thz 2011 - 36th International Conference On Infrared, Millimeter, and Terahertz Waves. DOI: 10.1109/irmmw-THz.2011.6105195  1
2011 Nogajewski K, Karpierz K, Grynberg M, Knap W, Gaska R, Yang J, Shur MS, Łusakowski J. Magnetotransport properties of grating-gate THz detectors based on high electron mobility GaN/AlGaN heterostructures Irmmw-Thz 2011 - 36th International Conference On Infrared, Millimeter, and Terahertz Waves. DOI: 10.1109/irmmw-THz.2011.6104919  1
2011 Sattu A, Billingsley D, Deng J, Yang J, Gaska R, Shur M, Simin G. Low loss AlInN/GaN Monolithic Microwave Integrated Circuit switch Device Research Conference - Conference Digest, Drc. 55-56. DOI: 10.1109/DRC.2011.5994438  1
2011 Gaska R, Yang J, Billingsley D, Khan B, Simin G, Wong HY, Braga N, Hu X, Deng J, Shur M, Mickevicius R. Insulated-gate integrated III-nitride RF switches Technical Digest - Ieee Compound Semiconductor Integrated Circuit Symposium, Csic. DOI: 10.1109/CSICS.2011.6062470  1
2011 Dobrovolskas D, Mickevičius J, Kuokštis E, Tamulaitis G, Shur M, Shatalov M, Yang J, Gaska R. Confocal spectroscopy of InGaN LED structures Journal of Physics D: Applied Physics. 44. DOI: 10.1088/0022-3727/44/13/135104  1
2011 Pinos A, Liuolia V, Marcinkevičius S, Yang J, Gaska R, Shur MS. Localization potentials in AlGaN epitaxial films studied by scanning near-field optical spectroscopy Journal of Applied Physics. 109. DOI: 10.1063/1.3594239  1
2011 Chivukula V, Čiplys D, Jain R, Yang J, Gaska R, Shur M. Acoustic plate mode propagation and interaction with ultraviolet light in periodic AIN-on-sapphire structure Applied Physics Letters. 98. DOI: 10.1063/1.3557507  1
2011 Sattu A, Billingsley D, Deng J, Yang J, Simin G, Shur M, Gaska R. Low-loss AlInN/GaN microwave switch Electronics Letters. 47: 863-865. DOI: 10.1049/El.2011.1010  1
2011 Hadi WA, O'Leary SK, Shur MS, Eastman LF. The sensitivity of the steady-state electron transport within bulk wurtzite zinc oxide to variations in the non-parabolicity coefficient Solid State Communications. 151: 874-878. DOI: 10.1016/J.Ssc.2011.04.004  1
2011 Young CD, Veksler D, Rumyantsev S, Huang J, Park H, Taylor W, Shur M, Bersuker G. Evaluation of the N- and La-induced defects in the high-κ gate stack using low frequency noise characterization Microelectronic Engineering. 88: 1255-1258. DOI: 10.1016/J.Mee.2011.03.109  1
2011 Billingsley D, Yang J, Gaska R, Shur M. Migration-enhanced metalorganic chemical vapor deposition of Al xIn1-xN/GaN heterostructures (x>0.75) on c-plane sapphire Journal of Crystal Growth. 327: 98-101. DOI: 10.1016/J.Jcrysgro.2011.06.015  1
2011 Tamulaitis G, Mickevičius J, Kazlauskas K, Žukauskas A, Shur MS, Yang J, Gaska R. Efficiency droop in high-Al-content AlGaN/AlGaN quantum wells Physica Status Solidi (C) Current Topics in Solid State Physics. 8: 2130-2132. DOI: 10.1002/Pssc.201000889  1
2010 Rumyantsev S, Liu G, Stillman W, Shur M, Balandin AA. Electrical and noise characteristics of graphene field-effect transistors: ambient effects, noise sources and physical mechanisms. Journal of Physics. Condensed Matter : An Institute of Physics Journal. 22: 395302. PMID 21403224 DOI: 10.1088/0953-8984/22/39/395302  1
2010 Popov VV, Fateev DV, Polischuk OV, Shur MS. Enhanced electromagnetic coupling between terahertz radiation and plasmons in a grating-gate transistor structure on membrane substrate. Optics Express. 18: 16771-6. PMID 20721068  1
2010 Zukauskas A, Vaicekauskas R, Shur M. Solid-state lamps with optimized color saturation ability. Optics Express. 18: 2287-95. PMID 20174057 DOI: 10.1364/Oe.18.002287  1
2010 Ryzhii M, Otsuji T, Mitin V, Shur MS, Ryzhii V. Field-Effect in Multiple Graphene Layer Structures The Japan Society of Applied Physics. DOI: 10.7567/Ssdm.2010.F-1-3  1
2010 Shatalov M, Sun W, Bilenko Y, Sattu A, Hu X, Deng J, Yang J, Shur M, Moe C, Wraback M, Gaska R. Large chip high power deep ultraviolet light-emitting diodes Applied Physics Express. 3. DOI: 10.1143/Apex.3.062101  1
2010 Elkhatib TA, Kachorovskii VY, Stillman WJ, Veksler DB, Salama KN, Zhang X, Shur MS. Enhanced Plasma Wave Detection of Terahertz Radiation Using Multiple High Electron-Mobility Transistors Connected in Series Ieee Transactions On Microwave Theory and Techniques. 58: 331-339. DOI: 10.1109/Tmtt.2009.2037872  1
2010 Shur MS, Gaska R. Deep-ultraviolet light-emitting diodes Ieee Transactions On Electron Devices. 57: 12-25. DOI: 10.1109/TED.2009.2033768  1
2010 Sattu A, Yang J, Shur M, Gaska R, Simin G. AlGaN/GaN microwave switch with hybrid slow and fast gate design Ieee Electron Device Letters. 31: 1389-1391. DOI: 10.1109/Led.2010.2073676  1
2010 Chivukula VS, Čiplys D, Rimeika R, Shur MS, Yang J, Gaska R. Impact of photocapacitance on phase response of GaN/sapphire SAW UV sensor Ieee Sensors Journal. 10: 883-887. DOI: 10.1109/Jsen.2009.2036936  1
2010 Veksler D, Bersuker G, Rumyantsev S, Shur M, Park H, Young C, Lim KY, Taylor W, Jammy R. Understanding noise measurements in MOSFETs: The role of traps structural relaxation Ieee International Reliability Physics Symposium Proceedings. 73-79. DOI: 10.1109/IRPS.2010.5488850  1
2010 Ryzhii M, Ryzhii V, Otsuji T, Mitin V, Shur MS. Electrically-induced n-i-p junctions in multiple graphene layer structures Physical Review B. 82: 75419. DOI: 10.1103/Physrevb.82.075419  1
2010 Pinos A, Marcinkevičius S, Yang J, Gaska R, Shatalov M, Shur MS. Optical studies of degradation of AlGaN quantum well based deep ultraviolet light emitting diodes Journal of Applied Physics. 108. DOI: 10.1063/1.3506697  1
2010 Chivukula V, Ciplys D, Sereika A, Shur M, Yang J, Gaska R. AlGaN based highly sensitive radio-frequency UV sensor Applied Physics Letters. 96. DOI: 10.1063/1.3405692  1
2010 Sun W, Shatalov M, Deng J, Hu X, Yang J, Lunev A, Bilenko Y, Shur M, Gaska R. Efficiency droop in 245-247 nm AlGaN light-emitting diodes with continuous wave 2 mW output power Applied Physics Letters. 96. DOI: 10.1063/1.3302466  1
2010 Muravjov AV, Veksler DB, Popov VV, Polischuk OV, Pala N, Hu X, Gaska R, Saxena H, Peale RE, Shur MS. Temperature dependence of plasmonic terahertz absorption in grating-gate gallium-nitride transistor structures Applied Physics Letters. 96. DOI: 10.1063/1.3292019  1
2010 O'Leary SK, Foutz BE, Shur MS, Eastman LF. Steady-state and transient electron transport within bulk wurtzite zinc oxide Solid State Communications. 150: 2182-2185. DOI: 10.1016/J.Ssc.2010.08.033  1
2010 O'Leary SK, Foutz BE, Shur MS, Eastman LF. The sensitivity of the electron transport within bulk wurtzite indium nitride to variations in the crystal temperature, the doping concentration, and the non-parabolicity coefficient: An updated Monte Carlo analysis Journal of Materials Science: Materials in Electronics. 21: 218-230. DOI: 10.1007/S10854-009-9896-1  1
2010 Shur M, Simin G, Rumyantsev S, Jain R, Gaska R. Insulated gate nitride-based field effect transistors Fundamentals of Iii-V Semiconductor Mosfets. 379-421. DOI: 10.1007/978-1-4419-1547-4_13  1
2010 Garrett GA, Sampath AV, Shen H, Wraback M, Sun W, Shatalov M, Hu X, Yang J, Bilenko Y, Lunev A, Shur MS, Gaska R, Grandusky JR, Schowalter LJ. Evaluation of AlGaN-based deep ultraviolet emitter active regions by temperature dependent time-resolved photoluminescence Physica Status Solidi (C) Current Topics in Solid State Physics. 7: 2390-2393. DOI: 10.1002/Pssc.200983906  1
2010 Deng J, Yang J, Hu X, Gaska R, Khan B, Simin G, Shur M. Insertion loss and linearity of III-nitride microwave switches Physica Status Solidi (C) Current Topics in Solid State Physics. 7: 2423-2425. DOI: 10.1002/Pssc.200983898  1
2010 Tamulaitis G, Mickevičius J, Dobrovolskas D, Kuokštis E, Shur M, Shatalov M, Yang J, Gaska R. Spatially-resolved photoluminescence study of high indium content InGaN LED structures Physica Status Solidi (C) Current Topics in Solid State Physics. 7: 1869-1871. DOI: 10.1002/Pssc.200983477  1
2010 Mickevičius J, Kuokštis E, Liuolia V, Tamulaitis G, Shur MS, Yang J, Gaska R. Photoluminescence dynamics of AlGaN quantum wells with built-in electric fields and localized states Physica Status Solidi (a) Applications and Materials Science. 207: 423-427. DOI: 10.1002/Pssa.200925227  1
2009 Rumyantsev SL, Shur MS, Levinshtein ME, Ivanov PA, Palmour JW, Das MK, Hull BA. Low Frequency Noise in 4H-SiC MOSFETs Materials Science Forum. 817-820. DOI: 10.4028/Www.Scientific.Net/Msf.615-617.817  1
2009 Chivukula VS, Ciplys D, Liu K, Shur MS, Gaska R. Surface acoustic wave propagation in GaN-on-sapphire under pulsed sub-band ultraviolet illumination International Journal of High Speed Electronics and Systems. 19: 77-83. DOI: 10.1142/S0129156409006102  1
2009 Simin G, Shur MS, Gaska R. 5-Terminal THz GaN based transistor with field- and space-charge control electrodes International Journal of High Speed Electronics and Systems. 19: 7-14. DOI: 10.1142/S0129156409006047  1
2009 Peale RE, Saxena H, Buchwald WR, Aizin G, Muravjov AV, Veksler DB, Pala N, Hu X, Gaska R, Shur MS. Grating-gate tunable plasmon absorption in InP and GaN based HEMTs Proceedings of Spie - the International Society For Optical Engineering. 7467. DOI: 10.1117/12.826187  1
2009 Muravjov AV, Veksler DB, Hu X, Gaska R, Pala N, Saxena H, Peale RE, Shur MS. Resonant terahertz absorption by plasmons in grating-gate GaN HEMT structures Proceedings of Spie - the International Society For Optical Engineering. 7311. DOI: 10.1117/12.818726  1
2009 Chivukula VS, Čiplys D, Shur MS, Yang J, Gaska R. Surface acoustic wave interdigital transducer response to deep UV illumination in AlGaN/sapphire Proceedings - Ieee Ultrasonics Symposium. DOI: 10.1109/ULTSYM.2009.5441821  1
2009 Simin G, Gaska R, Shur M. Novel RF devices with multiple capacitively-coupled electrodes Ieee Mtt-S International Microwave Symposium Digest. 445-448. DOI: 10.1109/MWSYM.2009.5165729  1
2009 Jin SH, Park M, Shur MS. Photosensitive Inverter and Ring Oscillator With Pseudodepletion Mode Load for LCD Applications Ieee Electron Device Letters. 30: 943-945. DOI: 10.1109/Led.2009.2026716  1
2009 Simin G, Khan B, Wang J, Koudymov A, Gaevski M, Jain R, Yang J, Hu X, Gaska R, Shur M. Multigate GaN RF switches with capacitively coupled contacts Ieee Electron Device Letters. 30: 895-897. DOI: 10.1109/Led.2009.2025675  1
2009 Koudymov A, Pala N, Tokranov V, Oktyabrsky S, Gaevski M, Jain R, Yang J, Hu X, Shur M, Gaska R, Simin G. HfO2-III-nitride RF switch with capacitively coupled contacts Ieee Electron Device Letters. 30: 478-480. DOI: 10.1109/Led.2009.2017284  1
2009 Koudymov A, Pala N, Tokranov V, Oktyabrsky S, Gaevski M, Jain R, Yang J, Hu X, Shur M, Gaska R, Simin G. RF transmission line method for wide-bandgap heterostructures Ieee Electron Device Letters. 30: 433-435. DOI: 10.1109/Led.2009.2016358  1
2009 Shao Q, Liu G, Teweldebrhan D, Balandin AA, Rumyantsev S, Shur MS, Yan D. Flicker Noise in Bilayer Graphene Transistors Ieee Electron Device Letters. 30: 288-290. DOI: 10.1109/Led.2008.2011929  1
2009 Yang J, Hu X, Deng J, Gaska R, Shur M, Simin G. AlInN/ GaN heterostructure field-effect transistors 2009 International Semiconductor Device Research Symposium, Isdrs '09. DOI: 10.1109/ISDRS.2009.5378095  1
2009 Wang J, Khan B, Sattu A, Yang J, Gaska R, Shur M, Simin G. Traveling-wave microwave switch using III-N gateless devices with capacitively-coupled contacts 2009 International Semiconductor Device Research Symposium, Isdrs '09. DOI: 10.1109/ISDRS.2009.5378054  1
2009 Chivukula VS, Čiplys D, Sereika A, Shur MS, Yang J, Gaska R. Highly sensitive radio-frequency UV sensor based on photocapacitive effect in GaN Proceedings of Ieee Sensors. 1901-1905. DOI: 10.1109/ICSENS.2009.5398375  1
2009 Sun W, Shatalov M, Hu X, Yang J, Lunev A, Bilenko Y, Shur M, Gaska R. Milliwatt power 245 nm deep ultraviolet light-emitting diodes Device Research Conference - Conference Digest, Drc. 109-110. DOI: 10.1109/DRC.2009.5354975  1
2009 Muravjov AV, Veksler DB, Popov VV, Shur MS, Pala N, Hu X, Gaska R, Saxena H, Peale RE. Terahertz plasmons in grating-gate algan/gan hemts Cleo/Europe - Eqec 2009 - European Conference On Lasers and Electro-Optics and the European Quantum Electronics Conference. DOI: 10.1109/CLEOE-EQEC.2009.5191761  1
2009 Rumyantsev SL, Shur MS, Levinshtein ME, Ivanov PA, Palmour JW, Agarwal AK, Hull BA, Ryu S. Channel mobility and on-resistance of vertical double implanted 4H-SiC MOSFETs at elevated temperatures Semiconductor Science and Technology. 24: 75011. DOI: 10.1088/0268-1242/24/7/075011  1
2009 Tamulaitis G, Mickevičius J, Kazlauskas K, Žukauskas A, Kuokštis E, Shur MS, Yang J, Gaska R. Carrier localization and decay in wide-band-gap AlGaN/AlGaN quantum wells Aip Conference Proceedings. 1199: 114-115. DOI: 10.1063/1.3295322  1
2009 Pinos A, Marcinkevičius S, Yang J, Bilenko Y, Shatalov M, Gaska R, Shur MS. Aging of AlGaN quantum well light emitting diode studied by scanning near-field optical spectroscopy Applied Physics Letters. 95. DOI: 10.1063/1.3262964  1
2009 Liuolia V, Marcinkevičius S, Pinos A, Gaska R, Shur MS. Dynamics of carrier recombination and localization in AlGaN quantum wells studied by time-resolved transmission spectroscopy Applied Physics Letters. 95. DOI: 10.1063/1.3222972  1
2009 Rumyantsev SL, Jin SH, Shur MS, Park M. Low frequency noise in amorphous silicon thin film transistors with SiNx gate dielectric Journal of Applied Physics. 105: 124504. DOI: 10.1063/1.3147928  1
2009 Shatalov M, Yang J, Sun W, Kennedy R, Gaska R, Liu K, Shur M, Tamulaitis G. Efficiency of light emission in high aluminum content AlGaN quantum wells Journal of Applied Physics. 105. DOI: 10.1063/1.3103321  1
2009 Simin G, Koudymov A, Yang Z, Hu X, Yang J, Shur M, Gaska R. Cryogenic RF switch using III-nitride MOSHFETs Electronics Letters. 45: 207-208. DOI: 10.1049/El:20092562  1
2009 Čiplys D, Chivukula VS, Sereika A, Rimeika R, Shur MS, Hu X, Gaska R. Wireless UV sensor based on photocapacitive effect in GaN Electronics Letters. 45: 653-654. DOI: 10.1049/El.2009.0324  1
2009 Yang Z, Hu X, Yang J, Simin G, Shur M, Gaska R. Maximum powers of low-loss series-shunt FET RF switches Solid-State Electronics. 53: 117-119. DOI: 10.1016/J.Sse.2008.11.009  1
2008 Popov VV, Tsymbalov GM, Shur MS. Plasma wave instability and amplification of terahertz radiation in field-effect-transistor arrays. Journal of Physics. Condensed Matter : An Institute of Physics Journal. 20: 384208. PMID 21693816 DOI: 10.1088/0953-8984/20/38/384208  1
2008 Ryzhii V, Satou A, Ryzhii M, Otsuji T, Shur MS. Mechanism of self-excitation of terahertz plasma oscillations in periodically double-gated electron channels. Journal of Physics. Condensed Matter : An Institute of Physics Journal. 20: 384207. PMID 21693815 DOI: 10.1088/0953-8984/20/38/384207  1
2008 Mickevicius J, Tamulaitis G, Kuokstis E, Shur MS, Yang J, Gaska R. Influence of electric field and carrier localization on carrier dynamics in AlGaN quantum wells Acta Physica Polonica A. 114: 1247-1252. DOI: 10.12693/Aphyspola.114.1247  1
2008 Mickevičius J, Vitta P, Tamulaitis G, Žukauskas A, Shur MS, Zhang J, Yang J, Gaska R. Luminescence decay kinetics in GaN studied by frequency domain measurements Acta Physica Polonica A. 113: 833-837. DOI: 10.12693/Aphyspola.113.833  1
2008 Koudymov A, Shur M. Non-ideal current transport in heterostructure field effect transistors International Journal of High Speed Electronics and Systems. 18: 935-947. DOI: 10.1142/S0129156408005898  1
2008 Shur MS, Gaska R. III-nitride based deep ultraviolet light sources Proceedings of Spie - the International Society For Optical Engineering. 6894. DOI: 10.1117/12.769128  1
2008 Koudymov A, Shur MS, Simin G, Chu K, Chao PC, Lee C, Jimenez J, Balistreri A. Analytical HFET I-V model in presence of current collapse Ieee Transactions On Electron Devices. 55: 712-720. DOI: 10.1109/Ted.2007.915092  1
2008 Simin G, Wang J, Hu X, Yang J, Yang Z, Gaska R, Shur M. Ultra low-loss high power AlGaN/GaN HFET switches Pesc Record - Ieee Annual Power Electronics Specialists Conference. 85-87. DOI: 10.1109/PESC.2008.4591903  1
2008 Yang Z, Wang J, Hu X, Yang J, Simin G, Shur M, Gaska R. Current crowding in high performance low-loss HFET RF switches Ieee Electron Device Letters. 29: 15-17. DOI: 10.1109/Led.2007.911621  1
2008 Shur MS, Simin G, Gaska R. III-N based electronics International Conference On Solid-State and Integrated Circuits Technology Proceedings, Icsict. 1066-1069. DOI: 10.1109/ICSICT.2008.4734729  1
2008 Yang Z, Kudymov A, Hu X, Yang J, Simin G, Shur M, Gaska R. Sub-0.1 dB loss Ill-nitride MOSHFET RF switches Device Research Conference - Conference Digest, Drc. 291-292. DOI: 10.1109/DRC.2008.4800845  1
2008 Koudymov A, Shur M. GaN-based HFET design for ultra-high frequency operation Device Research Conference - Conference Digest, Drc. 125-126. DOI: 10.1109/DRC.2008.4800766  1
2008 Pinos A, Marcinkevičius S, Liu K, Shur MS, Yang J, Shatalov M, Gaska R. Carrier lifetimes in AlGaN quantum wells: Electric field and excitonic effects Journal of Physics D: Applied Physics. 41. DOI: 10.1088/0022-3727/41/15/155116  1
2008 Rumyantsev SL, Shur MS, Levinshtein ME, Ivanov PA, Palmour JW, Das MK, Hull BA. Low frequency noise in 4H-SiC metal oxide semiconductor field effect transistors Journal of Applied Physics. 104: 94505. DOI: 10.1063/1.3009664  1
2008 Jain R, Sun W, Yang J, Shatalov M, Hu X, Sattu A, Lunev A, Deng J, Shturm I, Bilenko Y, Gaska R, Shur MS. Migration enhanced lateral epitaxial overgrowth of AlN and AlGaN for high reliability deep ultraviolet light emitting diodes Applied Physics Letters. 93. DOI: 10.1063/1.2969402  1
2008 Popov VV, Koudymov AN, Shur M, Polischuk OV. Tuning of ungated plasmons by a gate in the field-effect transistor with two-dimensional electron channel Journal of Applied Physics. 104. DOI: 10.1063/1.2955731  1
2008 Rumyantsev SL, Shur MS, Levinshtein ME, Motayed A, Davydov AV. Low-frequency noise in GaN nanowire transistors Journal of Applied Physics. 103. DOI: 10.1063/1.2895398  1
2008 Pinos A, Marcinkevičius S, Liu K, Shur MS, Kuokštis E, Tamulaitis G, Gaska R, Yang J, Sun W. Screening dynamics of intrinsic electric field in AlGaN quantum wells Applied Physics Letters. 92. DOI: 10.1063/1.2857467  1
2008 Stillman W, Veksler D, Elkhatib TA, Salama K, Guarin F, Shur MS. Sub-terahertz testing of silicon MOSFET Electronics Letters. 44: 1325-1326. DOI: 10.1049/El:20089418  1
2008 Pala N, Shur MS. Plasmonic terahertz detectors for biodetection Electronics Letters. 44: 1391-1393. DOI: 10.1049/El:20082886  1
2008 Pala N, Hu X, Deng J, Yang J, Gaska R, Yang Z, Koudymov A, Shur MS, Simin G. Drain-to-gate field engineering for improved frequency response of GaN-based HEMTs Solid-State Electronics. 52: 1217-1220. DOI: 10.1016/J.Sse.2008.05.010  1
2008 Iñiguez B, Picos R, Veksler D, Koudymov A, Shur MS, Ytterdal T, Jackson W. Universal compact model for long- and short-channel Thin-Film Transistors Solid-State Electronics. 52: 400-405. DOI: 10.1016/j.sse.2007.10.027  1
2008 Mickevicius J, Tamulaitis G, Vitta P, Zukauskas A, Shur MS, Zhang J, Yang J, Gaska R. Carrier dynamics in GaN at extremely low excited carrier densities Solid State Communications. 145: 312-315. DOI: 10.1016/J.Ssc.2007.10.038  1
2008 Gautier S, Aggerstam T, Pinos A, Marcinkevičius S, Liu K, Shur M, O’Malley SM, Sirenko AA, Djebbour Z, Migan-Dubois A, Moudakir T, Ougazzaden A. AlGaN/AlN multiple quantum wells grown by MOVPE on AlN templates using nitrogen as a carrier gas Journal of Crystal Growth. 310: 4927-4931. DOI: 10.1016/J.Jcrysgro.2008.08.040  1
2008 Tamulaitis G, Mickevičius J, Kuokštis E, Liu K, Shur MS, Zhang JP, Gaska R. Carrier dynamics in wide-band-gap AlGaN/AlGaN quantum wells Physica Status Solidi (C) Current Topics in Solid State Physics. 5: 2096-2098. DOI: 10.1002/Pssc.200778448  1
2007 Jackson WB, Almanza-Workman M, Chaiken A, Garcia R, Jeans A, Kim HJ, Kwon O, Luo H, Mei P, Perlov C, Taussig C, Shur MS, Koudymov A. Large area flexible electronics fabricated using self-aligned imprint lithography Ecs Transactions. 8: 197-204. DOI: 10.1149/1.2767308  1
2007 Shur MS, Veksler D, Chivukula V, Koudymov A, Ytterdal T, Iñiguez B, Jackson W. Modeling of thin film transistors with non-ideal contacts Ecs Transactions. 8: 165-170. DOI: 10.1149/1.2767303  1
2007 Deng J, Bilenko Y, Lunev A, Hu X, Katona TM, Zhang J, Shur MS, Gaska R. 247 nm ultra-violet light emitting diodes Japanese Journal of Applied Physics, Part 2: Letters. 46: L263-L264. DOI: 10.1143/Jjap.46.L263  1
2007 Iñiguez B, Picos R, Estrada M, Cerdeira A, Ytterdal TA, Jackson W, Koudymov A, Veksler D, Shur MS. Modelling of thin film transistors for circuit simulation Proceedings of the 14th International Conference "Mixed Design of Integrated Circuits and Systems", Mixdes 2007. 35-40. DOI: 10.1109/MIXDES.2007.4286117  1
2007 Koudymov A, Shur MS, Simin G. Compact model of current collapse in heterostructure field-effect transistors Ieee Electron Device Letters. 28: 332-335. DOI: 10.1109/Led.2007.895389  1
2007 Koudymov AN, Shur MS, Simin GS. Current collapse and reliability mechanisms in GaN HEMTs 2007 International Semiconductor Device Research Symposium, Isdrs. DOI: 10.1109/ISDRS.2007.4422464  1
2007 Simin G, Hu X, Yang Z, Yang J, Shur M, Gaska R. Low-loss high-power AlInGaN RF switches 2007 International Semiconductor Device Research Symposium, Isdrs. DOI: 10.1109/ISDRS.2007.4422461  1
2007 Gaska R, Shur MS, Zhang J. Physics and applications of deep UV LEDs Icsict-2006: 2006 8th International Conference On Solid-State and Integrated Circuit Technology, Proceedings. 842-844. DOI: 10.1109/ICSICT.2006.306525  1
2007 Stillman W, Guarin F, Kachorovskii VY, Pala N, Rumyantsev S, Shur MS, Veksler D. Nanometer scale complementary silicon MOSFETs as detectors of terahertz and sub-terahertz radiation Proceedings of Ieee Sensors. 934-937. DOI: 10.1109/ICSENS.2007.4388556  1
2007 Pala N, Veksler D, Muravjov A, Stillman W, Gaska R, Shur MS. Resonant detection and modulation of terahertz radiation by 2DEG plasmons in GaN grating-gate structures Proceedings of Ieee Sensors. 570-572. DOI: 10.1109/ICSENS.2007.4388462  1
2007 Veksler D, Muravjov A, Stillman W, Pala N, Shur M. Detection and homodyne mixing of terahertz gas laser radiation by submicron GaAs/AlGaAs FETs Proceedings of Ieee Sensors. 443-445. DOI: 10.1109/ICSENS.2007.4388431  1
2007 Saunier P, Lee C, Balistreri A, Dumka D, Jimenez J, Tserng HQ, Kao MY, Chao PC, Chu K, Souzis A, Eliashevich I, Guo S, Del Alamo J, Jon J, Shur M. Progress in GaN performances and reliability 65th Drc Device Research Conference. 35-36. DOI: 10.1109/DRC.2007.4373639  1
2007 Teperik TV, García De Abajo FJ, Popov VV, Shur MS. Strong terahertz absorption bands in a scaled plasmonic crystal Applied Physics Letters. 90. DOI: 10.1063/1.2749869  1
2007 Mickevičius J, Tamulaitis G, Kuokštis E, Liu K, Shur MS, Zhang JP, Gaska R. Well-width-dependent carrier lifetime in AIGaN/AIGaN quantum wells Applied Physics Letters. 90. DOI: 10.1063/1.2717145  1
2007 Marcinkevičius S, Pinos A, Liu K, Veksler D, Shur MS, Zhang J, Gaska R. Intrinsic electric fields in AlGaN quantum wells Applied Physics Letters. 90. DOI: 10.1063/1.2679864  1
2007 Tokranov V, Rumyantsev SL, Shur MS, Gaska R, Oktyabrsky S, Jain R, Pala N. HfO2/AIGaN/GaN structures with HfO2 deposited at ultra low pressure using an e-beam Physica Status Solidi - Rapid Research Letters. 1: 199-201. DOI: 10.1002/Pssr.200701136  1
2007 Koudymov A, Shur MS, Simin G, Gaska R. Current collapse and reliability of III-N heterostructure field effect transistors Physica Status Solidi - Rapid Research Letters. 1: 116-118. DOI: 10.1002/Pssr.200701047  1
2006 Bu G, Ciplys D, Shur M, Schowalter LJ, Schujman S, Gaska R. Surface acoustic wave velocity in single-crystal AlN substrates. Ieee Transactions On Ultrasonics, Ferroelectrics, and Frequency Control. 53: 251-4. PMID 16471453 DOI: 10.1109/Tuffc.2006.1588412  1
2006 Tamulaitis G, Mickevičius J, Vitta P, Žukauskas A, Shur MS, Liu K, Fareed Q, Zhang JP, Gaska R. Carrier lifetimes in GaN revealed by studying photoluminescence decay in time and frequency domains Ecs Transactions. 3: 307-314. DOI: 10.1149/1.2357219  1
2006 Simin G, Khan MA, Shur MS, Gaska R. High-power switching using III-Nitride metal-oxide-semiconductor heterostructures International Journal of High Speed Electronics and Systems. 16: 455-468. DOI: 10.1142/S0129156406003783  1
2006 Rumyantsev SL, Levinshteǐn ME, Gurevich SA, Kozhevin VM, Yavsin DA, Shur MS, Pala N, Khanna A. Low-frequency noise in monodisperse platinum nanostructures near the percolation threshold Physics of the Solid State. 48: 2194-2198. DOI: 10.1134/S106378340611028X  1
2006 Veksler D, Aniel F, Rumyantsev S, Shur MS, Pala N, Hu X, Fareed RSQ, Gaska R. GaN Heterodimensional Schottky diode for THz detection Proceedings of Ieee Sensors. 323-326. DOI: 10.1109/ICSENS.2007.355471  1
2006 Rumyantsev SL, Dmitriev AP, Levinshtein ME, Veksler D, Shur MS, Palmour JW, Das MK, Hull BA. Generation-recombination noise in forward biased 4H-SiC p-n diodes Journal of Applied Physics. 100: 64505. DOI: 10.1063/1.2345037  1
2006 Vijayaraghavan A, Kar S, Rumyantsev S, Khanna A, Soldano C, Pala N, Vajtai R, Kanzaki K, Kobayashi Y, Nalamasu O, Shur MS, Ajayan PM. Effect of ambient pressure on resistance and resistance fluctuations in single-wall carbon nanotube devices Journal of Applied Physics. 100. DOI: 10.1063/1.2218265  1
2006 Gundlach DJ, Zhou L, Nichols JA, Jackson TN, Necliudov PV, Shur MS. An experimental study of contact effects in organic thin film transistors Journal of Applied Physics. 100. DOI: 10.1063/1.2215132  1
2006 Sawyer S, Rumyantsev SL, Shur MS, Pala N, Bilenko Y, Zhang JP, Hu X, Lunev A, Deng J, Gaska R. Current and optical noise of GaN/AlGaN light emitting diodes Journal of Applied Physics. 100. DOI: 10.1063/1.2204355  1
2006 Mickevičius J, Tamulaitis G, Shur MS, Fareed Q, Zhang JP, Gaska R. Saturated gain in GaN epilayers studied by variable stripe length technique Journal of Applied Physics. 99. DOI: 10.1063/1.2196111  1
2006 O'Leary SK, Foutz BE, Shur MS, Eastman LF. Potential performance of indium-nitride-based devices Applied Physics Letters. 88. DOI: 10.1063/1.2193469  1
2006 El Fatimy A, Boubanga Tombet S, Teppe F, Knap W, Veksler DB, Rumyantsev S, Shur MS, Pala N, Gaska R, Fareed Q, Hu X, Seliuta D, Valusis G, Gaquiere C, Theron D, et al. Terahertz detection by GaN/AlGaN transistors Electronics Letters. 42: 1342-1344. DOI: 10.1049/El:20062452  1
2006 Ciplys D, Shur MS, Rimeika R, Sinius J, Gaska R, Bilenko Y, Fareed Q. UV-LED controlled GaN-based SAW phase shifter Electronics Letters. 42: 1254-1255. DOI: 10.1049/El:20062028  1
2006 Tamulaitis G, Mickevičius J, Vitta P, Žukauskas A, Shur MS, Fareed Q, Gaska R. Time- and frequency-domain measurements of carrier lifetimes in GaN epilayers Superlattices and Microstructures. 40: 274-278. DOI: 10.1016/J.Spmi.2006.07.001  1
2006 O'Leary SK, Foutz BE, Eastman LF, Shur MS. Steady-state and transient electron transport within the III-V nitride semiconductors, GaN, AlN, and InN: A review Journal of Materials Science: Materials in Electronics. 17: 87-126. DOI: 10.1007/S10854-006-5624-2  1
2006 Tamulaitis G, Mickevičius J, Shur MS, Fareed RSQ, Zhang JP, Gaska R. Carrier lifetime and diffusion in GaN epilayers grown by MEMOCVD™ Physica Status Solidi (C) Current Topics in Solid State Physics. 3: 1923-1926. DOI: 10.1002/Pssc.200565335  1
2006 Tamulaitis G, Kazlauskas K, Žukauskas A, Mickevičius J, Shur MS, Fareed RSQ, Zhang JP, Gaska R. Study of exciton hopping in AlGaN epilayers by photoluminescence spectroscopy and Monte Carlo simulation Physica Status Solidi (C) Current Topics in Solid State Physics. 3: 2099-2102. DOI: 10.1002/Pssc.200565334  1
2006 Hu X, Deng J, Zhang JP, Lunev A, Bilenko Y, Katona T, Shur MS, Gaska R, Shatalov M, Khan A. Deep ultraviolet light-emitting diodes Physica Status Solidi (a) Applications and Materials Science. 203: 1815-1818. DOI: 10.1002/Pssa.200565266  1
2006 Ciplys D, Shur MS, Sereika A, Rimeika R, Gaska R, Fareed Q, Zhang J, Hu X, Lunev A, Bilenko Y. Deep-UV LED controlled AlGaN-based SAW oscillator Physica Status Solidi (a) Applications and Materials Science. 203: 1834-1838. DOI: 10.1002/Pssa.200565218  1
2005 Salzberg BM, Kosterin PV, Muschol M, Obaid AL, Rumyantsev SL, Bilenko Y, Shur MS. An ultra-stable non-coherent light source for optical measurements in neuroscience and cell physiology. Journal of Neuroscience Methods. 141: 165-9. PMID 15585300 DOI: 10.1016/J.Jneumeth.2004.06.009  1
2005 Braga N, Mickevicius R, Fichtner W, Gaska R, Shur MS, Simin G, Khan MA. Simulation of AlGaN/GaN Heterostructure Field Effect Transistors The Japan Society of Applied Physics. 2005: 1054-1055. DOI: 10.7567/Ssdm.2005.I-7-1  1
2005 Bilenko Y, Lunev A, Hu X, Deng J, Katona TM, Zhang J, Gaska R, Shur MS, Sun W, Adivarahan V, Shatalov M, Khan A. 10 Milliwatt pulse operation of 265 nm AlGaN light emitting diodes Japanese Journal of Applied Physics, Part 2: Letters. 44: L98-L100. DOI: 10.1143/Jjap.44.L98  1
2005 Zhang J, Hu X, Lunev A, Deng J, Bilenko Y, Katona TM, Shur MS, Gaska R, Khan MA. AlGaN deep-ultraviolet light-emitting diodes Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 44: 7250-7253. DOI: 10.1143/Jjap.44.7250  1
2005 Rumyantsev SL, Sawyer S, Pala N, Shur MS, Bilenko Y, Zhang JP, Hu X, Lunev A, Deng J, Gaska R. Low frequency noise of light emitting diodes Proceedings of Spie - the International Society For Optical Engineering. 5844: 75-85. DOI: 10.1117/12.608559  1
2005 Karmalkar S, Shur MS, Simin G, Khan MA. Field-plate engineering for HFETs Ieee Transactions On Electron Devices. 52: 2534-2540. DOI: 10.1109/Ted.2005.859568  1
2005 Lunev A, Zhang J, Bilenko Y, Hu X, Deng J, Katona T, Shur M, Gaska R, Khan MA. A 110 mW AlGaN-based UV lamp emitting at 278 nm Device Research Conference - Conference Digest, Drc. 2005: 21-22. DOI: 10.1109/DRC.2005.1553038  1
2005 Shur MS, Gaska R. Physics of GaN-based heterostructure field effect transistors Technical Digest - Ieee Compound Semiconductor Integrated Circuit Symposium, Csic. 137-140. DOI: 10.1109/CSICS.2005.1531788  1
2005 Stanikūnas R, Vaitkevičius H, Švegžda A, Viliūnas V, Bliznikas Z, Breive K, Vaicekauskas R, Novičkovas A, Kurilčik G, Žukauskas A, Gaska R, Shur MS. Polychromatic solid-state lamps versus tungsten radiator: hue changes of Munsell samples Journal of Physics D. 38: 3202-3207. DOI: 10.1088/0022-3727/38/17/S23  1
2005 Mickevičius J, Shur MS, Fareed RSQ, Zhang JP, Gaska R, Tamulaitis G. Time-resolved experimental study of carrier lifetime in GaN epilayers Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2146061  1
2005 O'Leary SK, Foutz BE, Shur MS, Eastman LF. Steady-state and transient electron transport within bulk wurtzite indium nitride: An updated semiclassical three-valley Monte Carlo simulation analysis Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2135876  1
2005 Kazlauskas K, Žukauskas A, Tamulaitis G, Mickevičius J, Shur MS, Fareed RSQ, Zhang JP, Gaska R. Exciton hopping and nonradiative decay in AlGaN epilayers Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2112169  1
2005 Saygi S, Koudymov A, Adivarahan V, Yang J, Simin G, Khan MA, Deng J, Gaska R, Shur MS. Real-space electron transfer in III-nitride metal-oxide-semiconductor- heterojunction structures Applied Physics Letters. 87. DOI: 10.1063/1.2001745  1
2005 Teppe F, Veksler D, Kachorovski VY, Dmitriev AP, Xie X, Zhang X-, Rumyantsev S, Knap W, Shur MS. Plasma wave resonant detection of femtosecond pulsed terahertz radiation by a nanometer field-effect transistor Applied Physics Letters. 87: 22102. DOI: 10.1063/1.1952578  1
2005 Rumyantsev SL, Sawyer S, Shur MS, Pala N, Bilenko Y, Zhang JP, Hu X, Lunev A, Deng J, Gaska R. Low-frequency noise of GaN-based ultraviolet light-emitting diodes Journal of Applied Physics. 97. DOI: 10.1063/1.1928310  1
2005 Fareed RSQ, Hu X, Tarakji A, Deng J, Gaska R, Shur M, Khan MA. High-power AlGaN∕InGaN∕AlGaN∕GaN recessed gate heterostructure field-effect transistors Applied Physics Letters. 86: 143512. DOI: 10.1063/1.1886902  1
2005 Mickevičius J, Aleksiejūnas R, Shur MS, Sakalauskas S, Tamulaitis G, Fareed Q, Gaska R. Correlation between yellow luminescence intensity and carrier lifetimes in GaN epilayers Applied Physics Letters. 86: 41910. DOI: 10.1063/1.1857090  1
2005 Pala N, Teppe F, Veksler D, Deng Y, Shur MS, Gaska R. Nonresonant detection of terahertz radiation by silicon-on-insulator MOSFETs Electronics Letters. 41: 447-449. DOI: 10.1049/El:20058182  1
2005 Jain RB, Fareed RSQ, Zhang J, Gaska R, Kuokstis E, Yang J, Maruska HP, Khan MA, Mickevicius J, Tamulaitis G, Shur MS. Growth of high resistance thick GaN templates by HVPE Physica Status Solidi C: Conferences. 2: 2091-2094. DOI: 10.1002/Pssc.200461545  1
2005 Fareed RSQ, Zhang JP, Gaska R, Tamulaitis G, Mickevicius J, Aleksiejunas R, Shur MS, Khan MA. Migration enhanced MOCVD (MEMOCVD™) buffers for increased carrier lifetime in GaN and AlGaN epilayers on sapphire and SiC substrate Physica Status Solidi C: Conferences. 2: 2095-2098. DOI: 10.1002/Pssc.200461531  1
2005 Jarasiunas K, Aleksiejünas R, Malinauskas T, Sudzius M, Miasojedovas S, Jursenas S, Zukauskas A, Gaska R, Zhang J, Shur MS, Yang JW, Kuokstis E, Khan MA. Carrier diffusion and recombination in highly excited InGaN/GaN heterostructures Physica Status Solidi (a). 202: 820-823. DOI: 10.1002/Pssa.200461351  1
2005 Dyakonova N, Rumyantsev SL, Shur MS, Meziani Y, Pascal F, Hoffmann A, Fareed Q, Hu X, Bilenko Y, Gaska R, Knap W. High magnetic field studies of 1/f noise in GaN/AlGaN heterostructure field effect transistors Physica Status Solidi (a). 202: 677-679. DOI: 10.1002/Pssa.200460472  1
2005 Mickevičius J, Aleksiejūnas R, Shur MS, Tamulaitis G, Fareed RSQ, Zhang JP, Gaska R, Khan MA. Lifetime of nonequilibrium carriers in high‐Al‐content AlGaN epilayers Physica Status Solidi (a). 202: 126-130. DOI: 10.1002/Pssa.200406903  1
2004 Kolchanova SG, Grinko AA, Zinovieva YA, Sokolov SY, Ustyusganin SS, Shur ML, Blyakhman FA. The regional elastic properties analysis of myocardium based on echocardiographic 3-D reconstruction of the left ventricle. Ultrasound in Medicine & Biology. 30: 311-20. PMID 15063513 DOI: 10.1016/j.ultrasmedbio.2003.11.005  0.01
2004 Tamulaitis G, Yilmaz I, Shur MS, Gaska R, Anderson T. Nonequilibrium Carrier Lifetime and Diffusion Coefficients in 6H-SiC Materials Science Forum. 665-668. DOI: 10.4028/Www.Scientific.Net/Msf.457-460.665  1
2004 Zhong H, Karpowicz N, Xu J, Deng Y, Ussery W, Shur M, Zhang X. Detection of space shuttle insulation foam defects by using a 0.2 THz Gunn diode oscillator and pyroelectric detector Frontiers in Optics. DOI: 10.1364/Fio.2004.Ftug28  1
2004 Bu G, Ciplys D, Shur MS, Schowalter LJ, Schujman SB, Gaska R. Leaky surface acoustic waves in single-crystal AlN substrate International Journal of High Speed Electronics and Systems. 14: 837-846. DOI: 10.1142/S0129156404002922  1
2004 Simin G, Khan MA, Shur MS, Gaska R. Insulated Gate Iii-N Heterostructure Field-Effect Transistors International Journal of High Speed Electronics and Systems. 14: 197-224. DOI: 10.1142/S0129156404002302  1
2004 Rumyantsev SL, Pala N, Shur MS, Levinshtein ME, Gaska R, Khan MA, Simin G. Generation-recombination noise in GaN-based devices International Journal of High Speed Electronics and Systems. 14: 175-195. DOI: 10.1142/S0129156404002296  1
2004 Shmidt NM, Levinshteǐn ME, Lundin WV, Besyul'kin AI, Kop'ev PS, Rumyantsev SL, Pala N, Shur MS. Low-frequency noise in gallium nitride epitaxial layers with different degrees of order of mosaic structure Semiconductors. 38: 998-1000. DOI: 10.1134/1.1797474  1
2004 Sawyer S, Rumyantsev SL, Pala N, Shur MS, Bilenko Y, Gaska R, Kosterin PV, Salzberg BM. Noise characteristics of 340 nm and 280 nm GaN-based light emitting diodes International Journal of High Speed Electronics and Systems. 14: 702-707. DOI: 10.1109/Lechpd.2004.1549675  1
2004 Knap W, Fal’ko VI, Frayssinet E, Lorenzini P, Grandjean N, Maude D, Karczewski G, Brandt BL, Łusakowski J, Grzegory I, Leszczyński M, Prystawko P, Skierbiszewski C, Porowski S, Hu X, ... ... Shur MS, et al. Spin and interaction effects in Shubnikov–de Haas oscillations and the quantum Hall effect in GaN/AlGaN heterostructures Journal of Physics: Condensed Matter. 16: 3421-3432. DOI: 10.1088/0953-8984/16/20/013  1
2004 Vitta P, Žukauskas A, Gaska R, Shur MS. White Complementary Solid-State Lamp Leukos. 1: 59-66. DOI: 10.1080/15502724.2004.10732005  1
2004 Zhang JP, Hu X, Bilenko Y, Deng J, Lunev A, Shur MS, Gaska R, Shatalov M, Yang JW, Khan MA. AlGaN-based 280nm light-emitting diodes with continuous-wave power exceeding 1mW at 25mA Applied Physics Letters. 85: 5532-5534. DOI: 10.1063/1.1831557  1
2004 Braga N, Mickevicius R, Gaska R, Shur MS, Khan MA, Simin G. Simulation of gate lag and current collapse in gallium nitride field-effect transistors Applied Physics Letters. 85: 4780-4782. DOI: 10.1063/1.1823018  1
2004 Bu G, Shur MS, Čiplys D, Rimeika R, Gaska R, Fareed Q. Guided-wave acousto-optic diffraction in AlxGa1−xN epitaxial layers Applied Physics Letters. 85: 2157-2159. DOI: 10.1063/1.1792796  1
2004 Rumyantsev SL, Shur MS, Dyakonova N, Knap W, Meziani Y, Pascal F, Hoffman A, Hu X, Fareed Q, Bilenko Y, Gaska R. 1/f noise in GaN/AlGaN heterostructure field-effect transistors in high magnetic fields at 300 K Journal of Applied Physics. 96: 3845-3847. DOI: 10.1063/1.1787911  1
2004 Tamulaitis G, Yilmaz I, Shur MS, Fareed Q, Gaska R, Khan MA. Photoluminescence of AlGaN grown on bulk AlN substrates Applied Physics Letters. 85: 206-208. DOI: 10.1063/1.1771804  1
2004 Rumyantsev SL, Shur MS, Bilenko Y, Kosterin PV, Salzberg BM. Low frequency noise and long-term stability of noncoherent light sources Journal of Applied Physics. 96: 966-969. DOI: 10.1063/1.1763225  1
2004 Bu G, Ciplys D, Shur M, Schowalter LJ, Schujman S, Gaska R. Electromechanical coupling coefficient for surface acoustic waves in single-crystal bulk aluminum nitride Applied Physics Letters. 84: 4611-4613. DOI: 10.1063/1.1755843  1
2004 Braga N, Mickevicius R, Gaska R, Hu X, Shur MS, Khan MA, Simin G, Yang J. Simulation of hot electron and quantum effects in AlGaN/GaN heterostructure field effect transistors Journal of Applied Physics. 95: 6409-6413. DOI: 10.1063/1.1719262  1
2004 Fareed RSQ, Jain R, Gaska R, Shur MS, Wu J, Walukiewicz W, Khan MA. High quality InN/GaN heterostructures grown by migration enhanced metalorganic chemical vapor deposition Applied Physics Letters. 84: 1892-1894. DOI: 10.1063/1.1686889  1
2004 Tamulaitis G, Yilmaz I, Shur MS, Anderson T, Gaska R. Carrier lifetime in conductive and vanadium-doped 6H-SiC substrates Applied Physics Letters. 84: 335-337. DOI: 10.1063/1.1641172  1
2004 Deng Y, Kersting R, Xu J, Ascazubi R, Zhang XC, Shur MS, Gaska R, Simin GS, Asif Khan M, Ryzhii V. Millimeter wave emission from GaN high electron mobility transistor Applied Physics Letters. 84: 70-72. DOI: 10.1063/1.1638625  1
2004 Pala N, Rumyantsev SL, Sinius J, Talapatra S, Shur MS, Gaska R. CuS thin films on flexible substrates Electronics Letters. 40: 273-274. DOI: 10.1049/El:20040192  1
2004 Deng Y, Kersting R, Roytburd V, Xu J, Ascazubi R, Liu K, Zhang X, Shur MS. Spectrum Determination of Terahertz Sources Using Fabry-Perot Interferometer and Bolometer Detector International Journal of Infrared and Millimeter Waves. 25: 215-228. DOI: 10.1023/B:Ijim.0000017895.96534.E5  1
2003 Pala N, Rumyantsev SL, Shur MS, Levinshtein ME, Asif Khan M, Simin G, Gaska R. Generation-recombination noise in GaN and GaN-based devices Proceedings of Spie - the International Society For Optical Engineering. 5113: 217-231. DOI: 10.1117/12.488468  1
2003 Khan MA, Simin G, Yang J, Zhang J, Koudymov A, Shur MS, Gaska R, Hu X, Tarakji A. Insulating gate III-N heterostructure field-effect transistors for high-power microwave and switching applications Ieee Transactions On Microwave Theory and Techniques. 51: 624-633. DOI: 10.1109/Tmtt.2002.807681  1
2003 Koudymov A, Simin G, Khan MA, Tarakji A, Gaska R, Shur MS. Dynamic Current-Voltage Characteristics of III-N HFETs Ieee Electron Device Letters. 24: 680-682. DOI: 10.1109/Led.2003.818889  1
2003 Adivarahan V, Gaevski M, Sun WH, Fatima H, Koudymov A, Saygi S, Simin G, Yang J, Khan MA, Tarakji A, Shur MS, Gaska R. Submicron gate Si3N4/AlGaN/GaN-metal-insulator-semiconductor heterostructure field-effect transistors Ieee Electron Device Letters. 24: 541-543. DOI: 10.1109/Led.2003.816574  1
2003 Tarakji A, Fatima H, Hu X, Zhang J-, Simin G, Khan MA, Shur MS, Gaska R. Large-signal linearity in III-N MOSDHFETs Ieee Electron Device Letters. 24: 369-371. DOI: 10.1109/Led.2003.813355  1
2003 Simin G, Adivarahan V, Fatima H, Saygi S, Koudymov A, He X, Shuai W, Rai S, Yang J, Khan MA, Tarakji A, Deng J, Gaska R, Shur MS. Insulated gate 111-N devices and ICs 2003 International Semiconductor Device Research Symposium, Isdrs 2003 - Proceedings. 398-399. DOI: 10.1109/ISDRS.2003.1272152  1
2003 Kazlauskas K, Tamulaitis G, Zukauskas A, Khan MA, Yang JW, Zhang J, Simin G, Shur MS, Gaska R. Double-scaled potential profile in a group-III nitride alloy revealed by Monte Carlo simulation of exciton hopping Applied Physics Letters. 83: 3722-3724. DOI: 10.1063/1.1625111  1
2003 Tamulaitis G, Yilmaz I, Shur MS, Gaska R, Chen C, Yang J, Kuokstis E, Khan A, Schujman SB, Schowalter LJ. Photoluminescence of GaN deposited on single-crystal bulk AlN with different polarities Applied Physics Letters. 83: 3507-3509. DOI: 10.1063/1.1623322  1
2003 Kazlauskas K, Tamulaitis G, Žukauskas A, Khan MA, Yang JW, Zhang J, Kuokstis E, Simin G, Shur MS, Gaska R. Exciton and carrier motion in quaternary AlInGaN Applied Physics Letters. 82: 4501-4503. DOI: 10.1063/1.1586782  1
2003 Dmitriev AP, Kachorovskii VY, Shur MS, Gaska R. Nonlinear screening of pyroelectric films and grains in semiconductor matrix Journal of Applied Physics. 94: 566-572. DOI: 10.1063/1.1576491  1
2003 Rumyantsev SL, Pala N, Shur MS, Levinshtein ME, Asif Khan M, Simin G, Yang J. Low frequency noise in GaN/AlGaN heterostructure field effect transistors in non-ohmic region Journal of Applied Physics. 93: 10030-10034. DOI: 10.1063/1.1574599  1
2003 Hu X, Deng J, Pala N, Gaska R, Shur MS, Chen CQ, Yang J, Simin G, Khan MA, Rojo JC, Schowalter LJ. AlGaN/GaN heterostructure field-effect transistors on single-crystal bulk AlN Applied Physics Letters. 82: 1299-1301. DOI: 10.1063/1.1555282  1
2003 Kuokstis E, Zhang J, Fareed Q, Yang JW, Simin G, Khan MA, Gaska R, Shur M, Rojo JC, Schowalter LJ. Erratum: “Near-band-edge photoluminescence of wurtzite-type AlN” [Appl. Phys. Lett. 81, 2755 (2002)] Applied Physics Letters. 82: 1488-1488. DOI: 10.1063/1.1555280  1
2003 Shatalov M, Chitnis A, Mandavilli V, Pachipulusu R, Zhang JP, Adivarahan V, Wu S, Simin G, Khan MA, Tamulaitis G, Sereika A, Yilmaz I, Shur MS, Gaska R. Time-Resolved Electroluminescence of AlGaN-Based Light-Emitting Diodes with Emission at 285 nm Applied Physics Letters. 82: 167-169. DOI: 10.1063/1.1536729  1
2003 Bu G, Ciplys D, Shur M, Schowalter LJ, Schujman S, Gaska R. Temperature coefficient of SAW frequency in single crystal bulk AlN Electronics Letters. 39: 755-757. DOI: 10.1049/El:20030488  1
2003 Shur MS, Gaska R, Zukauskas A. High-brightness light-emitting diodes Access Science. DOI: 10.1036/1097-8542.Yb030515  1
2003 Pala N, Rumyantsev S, Shur M, Gaska R, Hu X, Yang J, Simin G, Khan MA. Low frequency noise in AlGaN/InGaN/GaN double heterostructure field effect transistors Solid-State Electronics. 47: 1099-1104. DOI: 10.1016/S0038-1101(02)00475-6  1
2003 O'Leary SK, Foutz BE, Shur MS, Eastman LF. Steady-state electron transport in the III-V nitride semiconductors: A sensitivity analysis Journal of Electronic Materials. 32: 327-334. DOI: 10.1007/S11664-003-0153-8  1
2003 Kazlauskas K, Tamulaitis G, Žukauskas A, Khan MA, Yang JW, Zhang J, Simin G, Shur MS, Gaska R. Localization and Hopping of Excitons in Quaternary AlInGaN Physica Status Solidi (C). 512-515. DOI: 10.1002/Pssc.200390101  1
2003 Žukauskas A, Kazlauskas K, Tamulaitis G, Khan MA, Yang JW, Zhang J, Simin G, Shur MS, Gaska R. Monte Carlo simulation of the exciton hopping in quaternary AlInGaN Physica Status Solidi (C). 2737-2740. DOI: 10.1002/Pssc.200303284  1
2003 Aleksiejūnas R, Sūdžius M, Gudelis V, Malinauskas T, Jarašiūnas K, Fareed Q, Gaska R, Shur MS, Zhang J, Yang J, Kuokštis E, Khan MA. Carrier transport and recombination in InGaN/GaN heterostructures, studied by optical four-wave mixing technique Physica Status Solidi (C). 2686-2690. DOI: 10.1002/Pssc.200303261  1
2003 Sun WH, Kuokstis E, Gaevski M, Zhang JP, Chen CQ, Wang HM, Yang JW, Simin G, Khan MA, Gaska R, Shur MS. Strong ultraviolet emission from non‐polar AlGaN/GaN quantum wells grown over r‐plane sapphire substrates Physica Status Solidi (a). 200: 48-51. DOI: 10.1002/Pssa.200303422  1
2003 Chitnis A, Adivarahan V, Zhang JP, Shatalov M, Wu S, Yang J, Simin G, Khan MA, Hu X, Fareed Q, Gaska R, Shur MS. Milliwatt power AlGaN quantum well deep ultraviolet light emitting diodes Physica Status Solidi (a). 200: 99-101. DOI: 10.1002/Pssa.200303420  1
2003 Khan MA, Shur MS, Simin G. Strain‐engineered novel III–N electronic devices with high quality dielectric/semiconductor interfaces Physica Status Solidi (a). 200: 155-160. DOI: 10.1002/Pssa.200303339  1
2003 Žukauskas A, Novičkovas A, Vitta P, Shur MS, Gaska R. Raman measurements in water using a high‐power light‐emitting diode Journal of Raman Spectroscopy. 34: 471-473. DOI: 10.1002/Jrs.1015  1
2002 Juršebas S, Miasojedovas S, Kurilčik N, Kurilčik G, Žukauskas A, Yang J, Khan MA, Shur MS, Gaska R. Stimulated emission in InGaN/GaN quantum wells Materials Science Forum. 265-268. DOI: 10.4028/Www.Scientific.Net/Msf.384-385.265  1
2002 Clarke FW, Ho FD, Khan MA, Simin G, Yang J, Gaska R, Shur MS, Deng J, Karmalkar S. Gate Current Modeling for Insulating Gate III-N Heterostructure Field-Effect Transistors Mrs Proceedings. 743. DOI: 10.1557/Proc-743-L9.10  1
2002 Deng J, Ciplys D, Bu G, Shur M, Gaska R. Properties of Surface Acoustic Waves in AlN And GaN Mrs Proceedings. 743. DOI: 10.1557/Proc-743-L6.36  1
2002 Hu X, Gaska R, Chen C, Yang J, Kuokstis E, Khan A, Tamulaitis G, Yilmaz I, Shur MS, Rojo JC, Schowalter LJ. Growth and characterization of deep UV emitter structures grown on single crystal bulk AlN substrates Materials Research Society Symposium - Proceedings. 743: 439-443. DOI: 10.1557/Proc-743-L6.30  1
2002 Tamulaitis G, Yilmaz I, Shur MS, Gaska R, Chen C, Yang J, Kuokstis E, Khan A, Rojo JC, Schowalter LJ. The influence of substrate surface polarity on optical properties of GaN grown on single crystal bulk AlN Materials Research Society Symposium - Proceedings. 743: 193-199. DOI: 10.1557/Proc-743-L3.34  1
2002 Rojo JC, Schowalter LJ, Slack G, Morgan K, Barani J, Schujman S, Biswas S, Raghothamachar B, Dudley M, Shur M, Gaska R, Johnson NM, Kneissl M. Progress in the preparation of aluminum nitride substrates from bulk crystals Materials Research Society Symposium - Proceedings. 722: 5-13. DOI: 10.1557/Proc-722-K1.1  1
2002 Pala N, Rumyantsev S, Shur M, Gaska R, Hu X, Yang J, Simin G, Khan MA. GENERATION-RECOMBINATION AND 1/f NOISE IN Al0.4Ga0.6N THIN FILMS Fluctuation and Noise Letters. 2. DOI: 10.1142/S0219477502000968  1
2002 Rumyantsev SL, Shur MS, Gaska R, Levinshtein ME, Khan MA, Simin G, Yang JW. Low Frequency Noise in Gallium Nitride Field Effect Transistors International Journal of High Speed Electronics and Systems. 12: 449-458. DOI: 10.1142/S012915640200137X  1
2002 Khan A, Yang JW, Simin G, Gaska R, Shur MS. STRAIN ENERGY BAND ENGINEERING APPROACH TO AlN/GaN/InN HETEROJUNCTION DEVICES International Journal of High Speed Electronics and Systems. 12: 401-419. DOI: 10.1142/S0129156402001332  1
2002 Simin G, Koudymov A, Fatima H, Zhang J, Yang J, Khan MA, Hu X, Tarakji A, Gaska R, Shur MS. SiO 2/AlGaN/InGaN/GaN MOSDHFETs Ieee Electron Device Letters. 23: 458-460. DOI: 10.1109/Led.2002.801316  1
2002 Ytterdal T, Fjeldly TA, Baier S, Deng J, Shur MS. Modeling and simulation of optoelectronic interconnect systems using a single kernel simulator Iccdcs 2002 - 4th Ieee International Caracas Conference On Devices, Circuits and Systems. DOI: 10.1109/ICCDCS.2002.1004046  1
2002 Rumyantsev SL, Pala N, Shur MS, Gaska R, Levinshtein ME, Ivanov PA, Asif Khan M, Simin G, Hu X, Yang J. Concentration dependence of the 1/f noise in AlGaN/GaN heterostructure field effect transistors Semiconductor Science and Technology. 17: 476-479. DOI: 10.1088/0268-1242/17/5/312  1
2002 Gaska R, Chen C, Yang J, Kuokstis E, Khan A, Tamulaitis G, Yilmaz I, Shur MS, Rojo JC, Schowalter LJ. Deep-ultraviolet emission of AlGaN/AIN quantum wells on bulk AIN Applied Physics Letters. 81: 4658-4660. DOI: 10.1063/1.1524034  1
2002 Adivarahan V, Wu S, Chitnis A, Pachipulusu R, Mandavilli V, Shatalov M, Zhang JP, Khan MA, Tamulaitis G, Sereika A, Yilmaz I, Shur MS, Gaska R. AlGaN single-quantum-well light-emitting diodes with emission at 285 nm Applied Physics Letters. 81: 3666-3668. DOI: 10.1063/1.1519100  1
2002 Kuokstis E, Zhang J, Fareed Q, Yang JW, Simin G, Khan MA, Gaska R, Shur M, Rojo C, Schowalter L. Near-band-edge photoluminescence of wurtzite-type AlN Applied Physics Letters. 81: 2755-2757. DOI: 10.1063/1.1510586  1
2002 Rumyantsev SL, Deng Y, Borovitskaya E, Dmitriev A, Knap W, Pala N, Shur MS, Levinshtein ME, Khan MA, Simin G, Yang J, Hu X. Low-frequency noise in GaN/AlGaN heterostructure field-effect transistors at cryogenic temperatures Journal of Applied Physics. 92: 4726-4730. DOI: 10.1063/1.1508432  1
2002 Koudymov A, Fatima H, Simin G, Yang J, Khan MA, Tarakji A, Hu X, Shur MS, Gaska R. Maximum current in nitride-based heterostructure field-effect transistors Applied Physics Letters. 80: 3216-3218. DOI: 10.1063/1.1476054  1
2002 Knap W, Deng Y, Rumyantsev S, Lü JQ, Shur MS, Saylor CA, Brunel LC. Resonant detection of subterahertz radiation by plasma waves in a submicron field-effect transistor Applied Physics Letters. 80: 3433-3435. DOI: 10.1063/1.1473685  1
2002 Knap W, Kachorovskii V, Deng Y, Rumyantsev S, Lü JQ, Gaska R, Shur MS, Simin G, Hu X, Khan MA, Saylor CA, Brunel LC. Nonresonant detection of terahertz radiation in field effect transistors Journal of Applied Physics. 91: 9346-9353. DOI: 10.1063/1.1468257  1
2002 Ciplys D, Rimeika R, Shur MS, Rumyantsev S, Gaska R, Sereika A, Yang J, Khan MA. Visible–blind photoresponse of GaN-based surface acoustic wave oscillator Applied Physics Letters. 80: 2020-2022. DOI: 10.1063/1.1459485  1
2002 Ciplys D, Rimeika R, Shur MS, Gaska R, Deng J, Yang JW, Khan MA. Acousto-optic diffraction of blue and red light in GaN Applied Physics Letters. 80: 1701-1703. DOI: 10.1063/1.1458690  1
2002 Knap W, Borovitskaya E, Shur MS, Hsu L, Walukiewicz W, Frayssinet E, Lorenzini P, Grandjean N, Skierbiszewski C, Prystawko P, Leszczynski M, Grzegory I. Acoustic phonon scattering of two-dimensional electrons in GaN/AlGaN heterostructures Applied Physics Letters. 80: 1228-1230. DOI: 10.1063/1.1448401  1
2002 Kuokstis E, Yang JW, Simin G, Khan MA, Gaska R, Shur MS. Two mechanisms of blueshift of edge emission in InGaN-based epilayers and multiple quantum wells Applied Physics Letters. 80: 977-979. DOI: 10.1063/1.1433164  1
2002 Žukauskas A, Vaicekauskas R, Ivanauskas F, Gaska R, Shur MS. Optimization of white polychromatic semiconductor lamps Applied Physics Letters. 80: 234-236. DOI: 10.1063/1.1432107  1
2002 Ciplys D, Rimeika R, Shur MS, Gaska R, Sereika A, Yang J, Khan MA. Radio frequency response of GaN-based SAW oscillator to UV illumination by the Sun and man-made source Electronics Letters. 38: 134-135. DOI: 10.1049/El:20020053  1
2002 Tarakji A, Hu X, Koudymov A, Simin G, Yang J, Khan MA, Shur MS, Gaska R. DC and microwave performance of a GaN/AlGaN MOSHFET under high temperature stress Solid-State Electronics. 46: 1211-1214. DOI: 10.1016/S0038-1101(02)00015-1  1
2002 Pala N, Rumyantsev SL, Shur MS, Hu X, Tarakji A, Gaska R, Asif Khan M, Simin G, Yang J. Transient response of highly doped thin channel GaN metal-semiconductor and metal-oxide-semiconductor field effect transistors Solid-State Electronics. 46: 711-714. DOI: 10.1016/S0038-1101(01)00302-1  1
2002 Carlos Rojo J, Schowalter LJ, Gaska R, Shur M, Khan MA, Yang J, Koleske DD. Growth and characterization of epitaxial layers on aluminum nitride substrates prepared from bulk, single crystals Journal of Crystal Growth. 240: 508-512. DOI: 10.1016/S0022-0248(02)01078-3  1
2002 Rimeika R, Ciplys D, Shur MS, Gaska R, Khan MA, Yang J. Electromechanical Coupling Coefficient for Surface Acoustic Waves in GaN-on-Sapphire Physica Status Solidi B-Basic Solid State Physics. 234: 897-900. DOI: 10.1002/1521-3951(200212)234:3<897::Aid-Pssb897>3.0.Co;2-9  1
2001 Shur MS, Gaska R, Khan A. III-Nitride Power Devices - Good Results and Great Expectations Materials Science Forum. 807-814. DOI: 10.4028/Www.Scientific.Net/Msf.353-356.807  1
2001 Zhang JP, Yang JW, Adivarahan V, Wang HM, Fareed Q, Kuokstis E, Chitnis A, Shatalov M, Simin G, Khan MA, Gaska R, Shur MS. Quaternary AlInGaN MQWs for Ultraviolet LEDs Mrs Proceedings. 693. DOI: 10.1557/Proc-693-I4.4.1  1
2001 Žukauskas A, Shur MS, Gaska R. Light-Emitting Diodes: Progress in Solid-State Lighting Mrs Bulletin. 26: 764-769. DOI: 10.1557/Mrs2001.203  1
2001 Zhang JP, Adivarahan V, Wang HM, Fareed Q, Kuokstis E, Chitnis A, Shatalov M, Yang JW, Simin G, Khan MA, Shur M, Gaska R. Quaternary AlInGaN Multiple Quantum Wells for Ultraviolet Light Emitting Diodes Japanese Journal of Applied Physics. 40: 921. DOI: 10.1143/Jjap.40.L921  1
2001 Simin G, Hu X, Tarakji A, Zhang J, Koudymov A, Saygi S, Yang J, Khan MA, Shur MS, Gaska R. AlGaN/InGaN/GaN Double Heterostructure Field-Effect Transistor Japanese Journal of Applied Physics. 40: 1142. DOI: 10.1143/Jjap.40.L1142  1
2001 Rumyantsev SL, Pala N, Shur MS, Levinshtein ME, Ivanov PA, Khan MA, Simin G, Yang J, Hu X, Tarakji A, Gaska R. Low-Frequency Noise in AlGaN/GaN Heterostructure Field Effect Transistors and Metal Oxide Semiconductor Heterostructure Field Effect Transistors Fluctuation and Noise Letters. 1. DOI: 10.1142/S0219477501000469  1
2001 Simin G, Hu X, Ilinskaya N, Zhang J, Tarakji A, Kumar A, Yang J, Khan MA, Gaska R, Shur MS. Large periphery high-power AlGaN/GaN metal-oxide-semiconductor heterostructure field effect transistors on SiC with oxide-bridging Ieee Electron Device Letters. 22: 53-55. DOI: 10.1109/55.902829  1
2001 Rumyantsev SL, Pala N, Shur MS, Borovitskaya E, Dmitriev AP, Levinshtein ME, Gaska R, Khan MA, Yang J, Hu X, Simin G. Generation-recombination noise in GaN/AlGaN heterostructure field effect transistors Ieee Transactions On Electron Devices. 48: 530-533. DOI: 10.1109/16.906447  1
2001 Kuokstis E, Zhang J, Ryu M-, Yang JW, Simin G, Khan MA, Gaska R, Shur MS. Localization of carriers and polarization effects in quaternary AlInGaN multiple quantum wells Applied Physics Letters. 79: 4375-4377. DOI: 10.1063/1.1429753  1
2001 Adivarahan V, Chitnis A, Zhang JP, Shatalov M, Yang JW, Simin G, Khan MA, Gaska R, Shur MS. Ultraviolet Light-Emitting Diodes at 340 nm using Quaternary AlInGaN Multiple Quantum Wells Applied Physics Letters. 79: 4240-4242. DOI: 10.1063/1.1425453  1
2001 Hu X, Koudymov A, Simin G, Yang J, Asif Khan M, Tarakji A, Shur MS, Gaska R. Si3N4/AlGaN/GaN-metal-insulator-semiconductor heterostructure field-effect transistors Applied Physics Letters. 79: 2832-2834. DOI: 10.1063/1.1412591  1
2001 Simin G, Koudymov A, Tarakji A, Hu X, Yang J, Asif Khan M, Shur MS, Gaska R. Induced strain mechanism of current collapse in AlGaN/GaN heterostructure field-effect transistors Applied Physics Letters. 79: 2651-2653. DOI: 10.1063/1.1412282  1
2001 Adivarahan V, Simin G, Tamulaitis G, Srinivasan R, Yang J, Khan MA, Shur MS, Gaska R. Indium-Silicon Co-Doping of High-Aluminum-Content AlGaN for Solar Blind Photodetectors Applied Physics Letters. 79: 1903-1905. DOI: 10.1063/1.1402159  1
2001 Zhang J, Kuokstis E, Fareed Q, Wang H, Yang J, Simin G, Khan MA, Gaska R, Shur M. Pulsed atomic layer epitaxy of quaternary AlInGaN layers Applied Physics Letters. 79: 925-927. DOI: 10.1063/1.1392301  1
2001 Rumyantsev SL, Pala N, Shur MS, Gaska R, Levinshtein ME, Adivarahan V, Yang J, Simin G, Khan MA. Low-frequency noise in Al0.4Ga0.6N-based Schottky barrier photodetectors Applied Physics Letters. 79: 866-868. DOI: 10.1063/1.1385191  1
2001 Rumyantsev SL, Pala N, Shur MS, Gaska R, Levinshtein ME, Asif Khan M, Simin G, Hu X, Yang J. Low frequency noise in GaN metal semiconductor and metal oxide semiconductor field effect transistors Journal of Applied Physics. 90: 310-314. DOI: 10.1063/1.1372364  1
2001 Tarakji A, Simin G, Ilinskaya N, Hu X, Kumar A, Koudymov A, Yang J, Asif Khan M, Shur MS, Gaska R. Mechanism of radio-frequency current collapse in GaN-AlGaN field-effect transistors Applied Physics Letters. 78: 2169-2171. DOI: 10.1063/1.1363694  1
2001 Adivarahan V, Lunev A, Khan MA, Yang J, Simin G, Shur MS, Gaska R. Very-low-specific-resistance Pd/Ag/Au/Ti/Au alloyed ohmic contact to p GaN for high-current devices Applied Physics Letters. 78: 2781-2783. DOI: 10.1063/1.1353813  1
2001 Gaska R, Shur MS, Hu X, Yang JW, Tarakji A, Simin G, Khan A, Deng J, Werner T, Rumyantsev S, Pala N. Highly doped thin-channel GaN-metal-semiconductor field-effect transistors Applied Physics Letters. 78: 769-771. DOI: 10.1063/1.1344577  1
2001 Shatalov M, Chitnis A, Adivarahan V, Lunev A, Zhang J, Yang JW, Fareed Q, Simin G, Zakheim A, Khan MA, Gaska R, Shur MS. Band-edge luminescence in quaternary AlInGaN light-emitting diodes Applied Physics Letters. 78: 817-819. DOI: 10.1063/1.1343493  1
2001 Ivanov PA, Levinshtein ME, Simin G, Hu X, Yang J, Khan MA, Rumyantsev SL, Shur MS, Gaska R. Drift mobility of electrons in AlGaN/GaN MOSHFET Electronics Letters. 37: 1479-1481. DOI: 10.1049/El:20010982  1
2001 Shur MS, Gaskiene G, Rumyantsev SL, Rimeika R, Gaska R, Sinius J. Photovoltaic effect in threads covered with CdS Electronics Letters. 37: 1036-1038. DOI: 10.1049/El:20010683  1
2001 Rumyantsev SL, Pala N, Shur MS, Gaska R, Levinshtein ME, Khan MA, Simin G, Hu X, Yang J. Thin n-GaN films with low level of 1/f noise Electronics Letters. 37: 720-721. DOI: 10.1049/El:20010468  1
2001 Ciplys D, Rimeika R, Sereika A, Gaska R, Shur MS, Yang JW, Khan MA. GaN-based SAW delay-line oscillator Electronics Letters. 37: 545-546. DOI: 10.1049/El:20010358  1
2001 Shur MS, Sinius J, Gaska R, Rumyantsev S. Photovoltaic effect in CdS on flexible substrate Electronics Letters. 37: 518-519. DOI: 10.1049/El:20010328  1
2001 O'Leary SK, Foutz BE, Shur MS, Eastman LF. Polar optical phonon instability and intervalley transfer in III-V semiconductors Solid State Communications. 118: 79-83. DOI: 10.1016/S0038-1098(01)00049-7  1
2001 Zhang JP, Kuokstis E, Fareed Q, Wang HM, Yang JW, Simin G, Khan MA, Tamulaitis G, Kurilcik G, Jursenas S, Zukauskas A, Gaska R, Shur M. Pulsed Atomic Layer Epitaxy of Quaternary AlInGaN Layers for Ultraviolet Light Emitters Physica Status Solidi (a). 188: 95-99. DOI: 10.1002/1521-396X(200111)188:1<95::Aid-Pssa95>3.0.Co;2-Q  1
2001 Simin G, Tarakji A, Hu X, Koudymov A, Yang J, Khan MA, Shur MS, Gaska R. High‐Temperature Performance of AlGaN/GaN Metal–Oxide–Semiconductor Heterostructure Field‐Effect‐Transistors Physica Status Solidi (a). 188: 219-222. DOI: 10.1002/1521-396X(200111)188:1<219::Aid-Pssa219>3.0.Co;2-L  1
2001 Shatalov M, Chitnis A, Basak D, Yang JW, Fareed Q, Simin G, Asif Khan M, Gaska R, Shur MS. Stripe Geometry Light Emitting Diodes over Pulsed Lateral Epitaxial Overgrown GaN for Solid State White Lighting Physica Status Solidi (a) Applied Research. 188: 147-150. DOI: 10.1002/1521-396X(200111)188:1<147::Aid-Pssa147>3.0.Co;2-L  1
2001 Kuokstis E, Zhang J, Yang JW, Simin G, Khan MA, Gaska R, Shur MS. Polarization Effects and UV Emission in Highly Excited Quaternary AlInGaN Quantum Wells Physica Status Solidi B-Basic Solid State Physics. 228: 559-562. DOI: 10.1002/1521-3951(200111)228:2<559::Aid-Pssb559>3.0.Co;2-V  1
2000 Shur MS, Gaska R, Khan A. Physics of GaN Based Electronic Devices The Japan Society of Applied Physics. 2000: 140-141. DOI: 10.7567/Ssdm.2000.E-2-1  1
2000 Rumyantsev SL, Look DC, Levinshtein ME, Khan MA, Simin G, Adivarahan V, Molnar J, Shur MS. Low Frequency Noise in n-GaN with High Electron Mobility Materials Science Forum. 1603-1608. DOI: 10.4028/Www.Scientific.Net/Msf.338-342.1603  1
2000 Ciplys D, Rimeika R, Khan MA, Yang JW, Gaska R, Shur MS. Characterization of Thick GaN Layers Using Guided Optical Waves Materials Science Forum. 1583-1586. DOI: 10.4028/Www.Scientific.Net/Msf.338-342.1583  1
2000 Pala N, Gaska R, Shur M, Yang JW, Khan MA. Low-Frequency Noise in SiO2 /AlGaN/GaN Heterostructures on SiC and Sapphire Substrates Mrs Internet Journal of Nitride Semiconductor Research. 5: 612-618. DOI: 10.1557/S109257830000483X  1
2000 Borovitskaya E, Knap W, Shur MS, Gaska R, Frayssinet E, Lorenzini P, Grandjen N, Baumont B, Massies J, Skierbiszewski C, Prystawko P, Leszczynski M, Grzegory I, Porowski S. Two-dimensional electron gas scattering mechanisms in AlGaN/GaN heterostructures Mrs Proceedings. 639. DOI: 10.1557/Proc-639-G7.5  1
2000 Knap W, Borovitskaya E, Shur MS, Gaska R, Karczewski G, Brandt B, Maude D, Frayssinet E, Lorenzini P, Grandjean N, Massies J, Yang JW, Hu X, Simin G, Khan MA, et al. High Magnetic Field Studies of AlGaN/GaN Heterostructures Grown on Bulk GaN, SiC, and Sapphire Substrates Mrs Proceedings. 639. DOI: 10.1557/Proc-639-G7.3  1
2000 Wang L, Fjeldly TA, Iniguez B, Slade HC, Shur M. Self-heating and kink effects in a-Si:H thin film transistors Ieee Transactions On Electron Devices. 47: 387-397. DOI: 10.1109/16.822285  1
2000 Rumyantsev S, Levinshtein ME, Gaska R, Shur MS, Yang JW, Khan MA. Low-frequency noise in AlGaN'GaN heterojunction field effect transistors on SiC and sapphire substrates Journal of Applied Physics. 87: 1849-1854. DOI: 10.1063/1.372102  1
2000 Chitnis A, Kumar A, Shatalov M, Adivarahan V, Lunev A, Yang JW, Simin G, Khan MA, Gaska R, Shur M. High-quality p–n junctions with quaternary AlInGaN/InGaN quantum wells Applied Physics Letters. 77: 3800-3802. DOI: 10.1063/1.1331084  1
2000 Rumyantsev SL, Pala N, Shur MS, Gaska R, Levinshtein ME, Khan MA, Simin G, Hu X, Yang J. Effect of gate leakage current on noise properties of AlGaN/GaN field effect transistors Journal of Applied Physics. 88: 6726-6730. DOI: 10.1063/1.1321790  1
2000 Zhang J, Yang J, Simin G, Shatalov M, Khan MA, Shur MS, Gaska R. Enhanced Luminescence in InGaN Multiple Quantum Wells with Quaternary AlInGaN Barriers Applied Physics Letters. 77: 2668-2670. DOI: 10.1063/1.1319531  1
2000 Frayssinet E, Knap W, Lorenzini P, Grandjean N, Massies J, Skierbiszewski C, Suski T, Grzegory I, Porowski S, Simin G, Hu X, Khan MA, Shur MS, Gaska R, Maude D. High Electron Mobility in AlGaN/GaN Heterostructures Grown on Bulk GaN Substrates Applied Physics Letters. 77: 2551-2553. DOI: 10.1063/1.1318236  1
2000 Tamulaitis G, Kazlauskas K, Juršėnas S, Žukauskas A, Khan MA, Yang JW, Zhang J, Simin G, Shur MS, Gaska R. Optical bandgap formation in AlInGaN alloys Applied Physics Letters. 77: 2136-2138. DOI: 10.1063/1.1314288  1
2000 Adivarahan V, Simin G, Yang JW, Lunev A, Khan MA, Pala N, Shur M, Gaska R. SiO 2 -Passivated Lateral-Geometry GaN Transparent Schottky-Barrier Detectors Applied Physics Letters. 77: 863-865. DOI: 10.1063/1.1306647  1
2000 Khan MA, Hu X, Tarakji A, Simin G, Yang J, Gaska R, Shur MS. AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors on SiC substrates Applied Physics Letters. 77: 1339-1341. DOI: 10.1063/1.1290269  1
2000 Gaska R, Shur MS, Bykhovski AD, Yang JW, Khan MA, Kaminski VV, Soloviov SM. Piezoresistive effect in metal–semiconductor–metal structures on p-type GaN Applied Physics Letters. 76: 3956-3958. DOI: 10.1063/1.126833  1
2000 Khan MA, Yang JW, Knap W, Frayssinet E, Hu X, Simin G, Prystawko P, Leszczynski M, Grzegory I, Porowski S, Gaska R, Shur MS, Beaumont B, Teisseire M, Neu G. GaN-AlGaN Heterostructure Field-Effect Transistors over Bulk GaN Substrates Applied Physics Letters. 76: 3807-3809. DOI: 10.1063/1.126788  1
2000 Shur MS, Bykhovski AD, Gaska R, Khan MA, Yang JW. AlGaN–GaN–AlInGaN induced base transistor Applied Physics Letters. 76: 3298-3300. DOI: 10.1063/1.126612  1
2000 Shur MS, Bykhovski AD, Gaska R, Yang JW, Simin G, Khan MA. Accumulation Hole Layer in p-GaN/AlGaN Heterostructures Applied Physics Letters. 76: 3061-3063. DOI: 10.1063/1.126579  1
2000 Juršėnas S, Kurilčik G, Tamulaitis G, Žukauskas A, Gaska R, Shur MS, Khan MA, Yang JW. Dynamic behavior of hot-electron–hole plasma in highly excited GaN epilayers Applied Physics Letters. 76: 2388-2390. DOI: 10.1063/1.126355  1
2000 Ciplys D, Gaska R, Shur MS, Rimeika R, Yang JW, Khan MA. Propagation of guided optical waves in thick GaN layers grown on (0001) sapphire Applied Physics Letters. 76: 2232-2234. DOI: 10.1063/1.126331  1
2000 Khan MA, Yang JW, Simin G, Gaska R, Shur MS, Loye Hz, Tamulaitis G, Zukauskas A, Smith DJ, Chandrasekhar D, Bicknell-Tassius R. Lattice and energy band engineering in AlInGaN/GaN heterostructures Applied Physics Letters. 76: 1161-1163. DOI: 10.1063/1.125970  1
2000 Simin G, Hu X, Ilinskaya N, Kumar A, Koudymov A, Zhang J, Asif Khan M, Gaska R, Shur MS. 7.5kW/mm2 current switch using AlGaN/GaN metal-oxide-semiconductor heterostructure field effect transistors on SiC substrates Electronics Letters. 36: 2043-2044. DOI: 10.1049/El:20001401  1
2000 Rumyantsev SL, Shur MS, Gaska R, Hu X, Khan A, Simin G, Yang J, Zhang N, DenBaars S, Mishra UK. Transient processes in AlGaN/GaN heterostructure field effect transistors Electronics Letters. 36: 757-759. DOI: 10.1049/El:20000573  1
2000 Hu X, Simin G, Yang J, Khan MA, Gaska R, Shur MS. Enhancement mode AlGaN/GaN HFET with selectively grown pn junction gate Electronics Letters. 36: 753-754. DOI: 10.1049/El:20000557  1
2000 Pala N, Lü JQ, Shur MS. Low frequency noise in GaAs heterodimensional junction field effect transistors Electronics Letters. 36: 675-677. DOI: 10.1049/El:20000498  1
2000 Ciplys D, Rimeika R, Gaska R, Shur MS, Khan A, Yang JW. Effect of metallisation on surface acoustic wave velocity in GaN-on-sapphire structures Electronics Letters. 36: 591-592. DOI: 10.1049/El:20000415  1
2000 Pala N, Gaska R, Rumyantsev S, Shur MS, Asif Khan M, Hu X, Simin G, Yang J. Low-frequency noise in AlGaN/GaN MOSHFETs Electronics Letters. 36: 268-270. DOI: 10.1049/El:20000171  1
2000 Dmitriev A, Kachorovski V, Shur MS, Stroscio M. Electron Drift Velocity Of The Two-Dimensional Electron Gas In Compound Semiconductors International Journal of High Speed Electronics and Systems. 10: 103-110. DOI: 10.1016/S0129-1564(00)00013-1  1
2000 Shur MS, Bykhovski AD, Gaska R. Two-dimensional hole gas induced by piezoelectric and pyroelectric charges Solid-State Electronics. 44: 205-210. DOI: 10.1016/S0038-1101(99)00225-7  1
1999 Gaska R, Shur MS, Bykhovski AD. Pyroelectric and Piezoelectric Properties of GaN-Based Materials Mrs Internet Journal of Nitride Semiconductor Research. 4: 57-68. DOI: 10.1557/S1092578300002246  1
1999 Foutz BE, Otleary SK, Shur MS, Eastman LF. Electron transport in the III-V nitride alloys Mrs Proceedings. 572: 445. DOI: 10.1557/Proc-572-445  1
1999 Tager AA, Gaska R, Avrutsky IA, Fay M, Chik H, SpringThorpe A, Eicher S, Xu JM, Shur M. Ion-implanted GaAs-InGaAs lateral current injection laser Ieee Journal On Selected Topics in Quantum Electronics. 5: 664-672. DOI: 10.1109/2944.788433  1
1999 Ytterdal T, Fjeldly TA, Shur MS, Baier SM, Lucero R. Enhanced hetero structure field effect transistor CAD model suitable for simulation of mixed mode circuits Ieee Transactions On Electron Devices. 46: 1577-1588. DOI: 10.1109/16.777144  1
1999 Levinshtein ME, Rumyantsev SL, Look DC, Molnar RJ, Khan MA, Simin G, Adivarahan V, Shur MS. Low-Frequency Noise in n-GaN with High Electron Mobility Journal of Applied Physics. 86: 5075-5078. DOI: 10.1063/1.371482  1
1999 Foutz BE, O’Leary SK, Shur MS, Eastman LF. Transient electron transport in wurtzite GaN, InN, and AlN Journal of Applied Physics. 85: 7727-7734. DOI: 10.1063/1.370577  1
1999 Gaska R, Bykhovski AD, Shur MS, Kaminskii VV, Soloviov SM. Piezoresistive effect in AlN/GaN short range superlattice structures Journal of Applied Physics. 85: 6932-6934. DOI: 10.1063/1.370109  1
1999 Gaska R, Shur MS, Fjeldly TA, Bykhovski AD. Two-channel AlGaN/GaN heterostructure field effect transistor for high power applications Journal of Applied Physics. 85: 3009-3011. DOI: 10.1063/1.369621  1
1999 Khan MA, Yang JW, Simin G, Gaska R, Shur MS, Bykhovski AD. Piezoelectric Doping In Alingan/Gan Heterostructures Applied Physics Letters. 75: 2806-2808. DOI: 10.1063/1.125156  1
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