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Zhanbo Xia - Publications

Affiliations: 
Ohio State University, Columbus, Columbus, OH 
Area:
Solid States
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28 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2020 Cheng J, Wang C, Freeze C, Shoron O, Combs N, Yang H, Kalarickal NK, Xia Z, Stemmer S, Rajan S, Lu W. High-Current Perovskite Oxide BaTiO 3 /BaSnO 3 Heterostructure Field Effect Transistors Ieee Electron Device Letters. 41: 621-624. DOI: 10.1109/Led.2020.2976456  0.656
2020 Kumar N, Vaca D, Joishi C, Xia Z, Rajan S, Kumar S. Ultrafast Thermoreflectance Imaging and Electrothermal Modeling of β-Ga2O3 MESFETs Ieee Electron Device Letters. 41: 641-644. DOI: 10.1109/Led.2020.2975038  0.384
2020 Kalarickal NK, Xia Z, McGlone JF, Liu Y, Moore W, Arehart AR, Ringel SA, Rajan S. High electron density β-(Al0.17Ga0.83)2O3/Ga2O3 modulation doping using an ultra-thin (1 nm) spacer layer Journal of Applied Physics. 127: 215706. DOI: 10.1063/5.0005531  0.657
2020 Razzak T, Chandrasekar H, Hussain K, Lee CH, Mamun A, Xue H, Xia Z, Sohel SH, Rahman MW, Bajaj S, Wang C, Lu W, Khan A, Rajan S. BaTiO3/Al0.58Ga0.42N lateral heterojunction diodes with breakdown field exceeding 8 MV/cm Applied Physics Letters. 116: 23507. DOI: 10.1063/1.5130590  0.645
2020 Xue H, Hwang S, Razzak T, Lee C, Calderon Ortiz G, Xia Z, Hasan Sohel S, Hwang J, Rajan S, Khan A, Lu W. All MOCVD grown Al0.7Ga0.3N/Al0.5Ga0.5N HFET: An approach to make ohmic contacts to Al-rich AlGaN channel transistors Solid-State Electronics. 164: 107696. DOI: 10.1016/J.Sse.2019.107696  0.641
2020 Lee H, Kalarickal NK, Rahman MW, Xia Z, Moore W, Wang C, Rajan S. High-permittivity dielectric edge termination for vertical high voltage devices Journal of Computational Electronics. 1-8. DOI: 10.1007/S10825-020-01553-Y  0.618
2020 Feng Z, Bhuiyan AFMAU, Xia Z, Moore W, Chen Z, McGlone JF, Daughton DR, Arehart AR, Ringel SA, Rajan S, Zhao H. Probing Charge Transport and Background Doping in Metal‐Organic Chemical Vapor Deposition‐Grown (010) β‐Ga 2 O 3 Physica Status Solidi-Rapid Research Letters. 14: 2000145. DOI: 10.1002/Pssr.202000145  0.542
2019 Xue H, Lee CH, Hussian K, Razzak T, Abdullah M, Xia Z, Sohel SH, Khan A, Rajan S, Lu W. Al0.75Ga0.25N/Al0.6Ga0.4N heterojunction field effect transistor with fT of 40 GHz Applied Physics Express. 12: 66502. DOI: 10.7567/1882-0786/Ab1Cf9  0.618
2019 Kumar N, Joishi C, Xia Z, Rajan S, Kumar S. Electrothermal Characteristics of Delta-Doped $\beta$ -Ga2O3 Metal–Semiconductor Field-Effect Transistors Ieee Transactions On Electron Devices. 66: 5360-5366. DOI: 10.1109/Ted.2019.2944628  0.449
2019 Zhang Y, Xia Z, Mcglone J, Sun W, Joishi C, Arehart AR, Ringel SA, Rajan S. Evaluation of Low-Temperature Saturation Velocity in $\beta$ -(AlxGa1–x)2O3/Ga2O3 Modulation-Doped Field-Effect Transistors Ieee Transactions On Electron Devices. 66: 1574-1578. DOI: 10.1109/Ted.2018.2889573  0.642
2019 Xia Z, Wang C, Kalarickal NK, Stemmer S, Rajan S. Design of Transistors Using High-Permittivity Materials Ieee Transactions On Electron Devices. 66: 896-900. DOI: 10.1109/Ted.2018.2888834  0.607
2019 Joishi C, Zhang Y, Xia Z, Sun W, Arehart AR, Ringel S, Lodha S, Rajan S. Breakdown Characteristics of $\beta$ -(Al 0.22 Ga 0.78 ) 2 O 3 /Ga 2 O 3 Field-Plated Modulation-Doped Field-Effect Transistors Ieee Electron Device Letters. 40: 1241-1244. DOI: 10.1109/Led.2019.2921116  0.658
2019 Xia Z, Xue H, Joishi C, Mcglone J, Kalarickal NK, Sohel SH, Brenner M, Arehart A, Ringel S, Lodha S, Lu W, Rajan S. $\beta$ -Ga2O3 Delta-Doped Field-Effect Transistors With Current Gain Cutoff Frequency of 27 GHz Ieee Electron Device Letters. 40: 1052-1055. DOI: 10.1109/Led.2019.2920366  0.647
2019 Xia Z, Chandrasekar H, Moore W, Wang C, Lee AJ, McGlone J, Kalarickal NK, Arehart A, Ringel S, Yang F, Rajan S. Metal/BaTiO3/β-Ga2O3 dielectric heterojunction diode with 5.7 MV/cm breakdown field Applied Physics Letters. 115: 252104. DOI: 10.1063/1.5130669  0.668
2019 Kalarickal NK, Xia Z, McGlone J, Krishnamoorthy S, Moore W, Brenner M, Arehart AR, Ringel SA, Rajan S. Mechanism of Si doping in plasma assisted MBE growth of β-Ga2O3 Applied Physics Letters. 115: 152106. DOI: 10.1063/1.5123149  0.665
2019 McGlone JF, Xia Z, Joishi C, Lodha S, Rajan S, Ringel S, Arehart AR. Identification of critical buffer traps in Si δ-doped β-Ga2O3 MESFETs Applied Physics Letters. 115: 153501. DOI: 10.1063/1.5118250  0.637
2019 Chandrasekar H, Cheng J, Wang T, Xia Z, Combs NG, Freeze CR, Marshall PB, McGlone J, Arehart A, Ringel S, Janotti A, Stemmer S, Lu W, Rajan S. Velocity saturation in La-doped BaSnO3 thin films Applied Physics Letters. 115: 92102. DOI: 10.1063/1.5097791  0.623
2018 Pratiyush AS, Krishnamoorthy S, Kumar S, Xia Z, Muralidharan R, Rajan S, Nath DN. Demonstration of zero bias responsivity in MBE grown β-Ga2O3 lateral deep-UV photodetector Japanese Journal of Applied Physics. 57: 60313. DOI: 10.7567/Jjap.57.060313  0.702
2018 Joishi C, Rafique S, Xia Z, Han L, Krishnamoorthy S, Zhang Y, Lodha S, Zhao H, Rajan S. Low-pressure CVD-grown β-Ga2O3 bevel-field-plated Schottky barrier diodes Applied Physics Express. 11: 31101. DOI: 10.7567/Apex.11.031101  0.718
2018 Pratiyush AS, Xia Z, Kumar S, Zhang Y, Joishi C, Muralidharan R, Rajan S, Nath DN. MBE-Grown $\beta$ -Ga2O3-Based Schottky UV-C Photodetectors With Rectification Ratio ~107 Ieee Photonics Technology Letters. 30: 2025-2028. DOI: 10.1109/Lpt.2018.2874725  0.631
2018 Mcglone JF, Xia Z, Zhang Y, Joishi C, Lodha S, Rajan S, Ringel SA, Arehart AR. Trapping Effects in Si -Doped -Ga2O3 MESFETs on an Fe-Doped -Ga2O3 Substrate Ieee Electron Device Letters. 39: 1042-1045. DOI: 10.1109/Led.2018.2843344  0.593
2018 Xia Z, Joishi C, Krishnamoorthy S, Bajaj S, Zhang Y, Brenner M, Lodha S, Rajan S. Delta Doped $\beta$ -Ga2O3 Field Effect Transistors With Regrown Ohmic Contacts Ieee Electron Device Letters. 39: 568-571. DOI: 10.1109/Led.2018.2805785  0.725
2018 Joishi C, Xia Z, McGlone J, Zhang Y, Arehart AR, Ringel S, Lodha S, Rajan S. Effect of buffer iron doping on delta-doped β-Ga2O3 metal semiconductor field effect transistors Applied Physics Letters. 113: 123501. DOI: 10.1063/1.5039502  0.616
2018 Zhang Y, Joishi C, Xia Z, Brenner M, Lodha S, Rajan S. Demonstration of β-(AlxGa1-x)2O3/Ga2O3 double heterostructure field effect transistors Applied Physics Letters. 112: 233503. DOI: 10.1063/1.5037095  0.644
2018 Zhang Y, Neal A, Xia Z, Joishi C, Johnson JM, Zheng Y, Bajaj S, Brenner M, Dorsey D, Chabak K, Jessen G, Hwang J, Mou S, Heremans JP, Rajan S. Demonstration of high mobility and quantum transport in modulation-doped β-(AlxGa1-x)2O3/Ga2O3 heterostructures Applied Physics Letters. 112: 173502. DOI: 10.1063/1.5025704  0.633
2017 Krishnamoorthy S, Xia Z, Bajaj S, Brenner M, Rajan S. Delta-doped β-gallium oxide field-effect transistor Applied Physics Express. 10: 51102. DOI: 10.7567/Apex.10.051102  0.722
2017 Krishnamoorthy S, Xia Z, Joishi C, Zhang Y, McGlone J, Johnson J, Brenner M, Arehart AR, Hwang J, Lodha S, Rajan S. Modulation-doped β-(Al0.2Ga0.8)2O3/Ga2O3 field-effect transistor Applied Physics Letters. 111: 023502. DOI: 10.1063/1.4993569  0.733
2017 Pratiyush AS, Krishnamoorthy S, Solanke SV, Xia Z, Muralidharan R, Rajan S, Nath DN. High responsivity in molecular beam epitaxy grown beta-Ga2O3 metal semiconductor metal solar blind deep-UV photodetector Applied Physics Letters. 110: 221107. DOI: 10.1063/1.4984904  0.691
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