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Huili Xing, Ph.D.

Affiliations:

2003

University of California, Santa Barbara, Santa Barbara, CA, United States

Area:

Electronics & Photonics

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Parents

Umesh Mishra	grad student	2003	UC Santa Barbara
(Growth, fabrication and characterization of gallium nitride based bipolar transistors.)

Children

Chuanxin Lian	grad student	2009	Notre Dame
David A. Deen	grad student	2011	Notre Dame
Guangle Zhou	grad student	2012	Notre Dame
Berardi Sensale-Rodriguez	grad student	2013	Notre Dame

Collaborators

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Publications

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Geng Y, Luo J, van Deurzen L, et al. (2023) Dephasing by optical phonons in GaN defect single-photon emitters. Scientific Reports. 13: 8678
Zhang Z, Hayashi Y, Tohei T, et al. (2022) Molecular beam homoepitaxy of N-polar AlN: Enabling role of aluminum-assisted surface cleaning. Science Advances. 8: eabo6408
Yu T, Wright J, Khalsa G, et al. (2021) Momentum-resolved electronic structure and band offsets in an epitaxial NbN/GaN superconductor/semiconductor heterojunction. Science Advances. 7: eabi5833
Dang P, Khalsa G, Chang CS, et al. (2021) An all-epitaxial nitride heterostructure with concurrent quantum Hall effect and superconductivity. Science Advances. 7
Jinno R, Chang CS, Onuma T, et al. (2021) Crystal orientation dictated epitaxy of ultrawide-bandgap 5.4- to 8.6-eV α-(AlGa)O on m-plane sapphire. Science Advances. 7
Khan I, Fang Z, Palei M, et al. (2020) Engineering the Berreman mode in mid-infrared polar materials. Optics Express. 28: 28590-28599
Bharadwaj S, Miller J, Lee K, et al. (2020) Enhanced injection efficiency and light output in bottom tunnel-junction light-emitting diodes. Optics Express. 28: 4489-4500
Li L, Nomoto K, Pan M, et al. (2020) GaN HEMTs on Si With Regrown Contacts and Cutoff/Maximum Oscillation Frequencies of 250/204 GHz Ieee Electron Device Letters. 41: 689-692
Li W, Nomoto K, Hu Z, et al. (2020) Field-Plated Ga2O3 Trench Schottky Barrier Diodes With a BV2/$R_{\text{on,sp}}$ of up to 0.95 GW/cm2 Ieee Electron Device Letters. 41: 107-110
Encomendero J, Protasenko V, Rana F, et al. (2020) Fighting Broken Symmetry with Doping: Toward Polar Resonant Tunneling Diodes with Symmetric Characteristics Physical Review Applied. 13

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