Janet L. Pan
Affiliations: | Yale University, New Haven, CT |
Area:
Electronics and Electrical Engineering, Materials Science EngineeringGoogle:
"Janet Pan"Children
Sign in to add trainee| Joseph E. McManis | grad student | 2007 | Yale |
| Manisha Gupta | grad student | 2009 | Yale |
BETA: Related publications
See more...
Publications
|
You can help our author matching system! If you notice any publications incorrectly attributed to this author, please sign in and mark matches as correct or incorrect. |
| Pan JL. (2009) Progress to a Gallium-Arsenide Deep-Center Laser Materials. 2: 1599-1635 |
| Pan JL, McManis JE, Gupta M, et al. (2008) Novel deep centers for high-performance optical materials Applied Physics a: Materials Science and Processing. 90: 105-112 |
| Pan JL. (2006) Gallium-arsenide deep-level materials for THz and 1.5 μm fiber-optic applications Physica B-Condensed Matter. 376: 540-544 |
| Pan JL, McManis J, Grober L, et al. (2004) Gallium-arsenide deep-level tunnel diode with record negative conductance and record peak current density Solid-State Electronics. 48: 2067-2070 |
| Pan JL, McManis JE, Osadchy T, et al. (2003) Gallium arsenide deep-level optical emitter for fibre optics. Nature Materials. 2: 375-8 |
| Pan J, McManis J, Grober L, et al. (2003) Gallium-arsenide deep-level pin tunnel diode with very negative conductance Electronics Letters. 39: 1411 |
| Pan JL. (2001) Optical emission from bound states of semiconductor deep-centers. Optics Express. 9: 796-801 |
| Pan JL, Fonstad CG. (2000) Theory, fabrication and characterization of quantum well infrared photodetectors Materials Science and Engineering R: Reports. 28: 65-147 |
| Pan JL, Fonstad CG, Matney K. (2000) Measurement of layer width uniformity in quantum well infrared photodetectors by high resolution X-ray techniques Journal of Crystal Growth. 219: 335-345 |