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Mark William Nelson - Publications

Affiliations: 
2000 Colorado State University, Fort Collins, CO 
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12 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2000 Schroeder PG, Nelson MW, Parkinson BA, Schlaf R. Investigation of band bending and charging phenomena in frontier orbital alignment measurements of para-quaterphenyl thin films grown on highly oriented pyrolytic graphite and SnS2 Surface Science. 459: 349-364. DOI: 10.1016/S0039-6028(00)00472-6  0.705
2000 Schlaf R, Schroeder PO, Nelson MW, Parkinson BA, Merritt CD, Crisafulli LA, Murata H, Kafafi ZH. Determination of interface dipole and band bending at the Ag/tris (8-hydroxyquinolinato) gallium organic Schottky contact by ultraviolet photoemission spectroscopy Surface Science. 450: 142-152. DOI: 10.1016/S0039-6028(00)00232-6  0.537
1999 Nelson MW, Schroeder PG, Schlaf R, Parkinson BA. Two-dimensional dopant profiling of an integrated circuit using bias-applied phase-imaging tapping mode atomic force microscopy Electrochemical and Solid-State Letters. 2: 475-477. DOI: 10.1149/1.1390875  0.726
1999 Nelson MW, Schroeder PG, Schlaf R, Parkinson BA. Two-dimensional dopant profiling of patterned Si wafers using phase imaging tapping mode atomic force microscopy with applied biases Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 17: 1354. DOI: 10.1116/1.590760  0.728
1999 Schlaf R, Schroeder PG, Nelson MW, Parkinson BA, Lee PA, Nebesny KW, Armstrong NR. Observation of strong band bending in perylene tetracarboxylic dianhydride thin films grown on SnS2 Journal of Applied Physics. 86: 1499-1509. DOI: 10.1063/1.370920  0.683
1999 Schlaf R, Schroeder PG, Nelson MW, Parkinson BA, Lee PA, Nebesny KW, Armstrong NR. Observation of strong band bending in perylene tetracarboxylic dianhydride thin films grown on SnS2 Journal of Applied Physics. 86: 1499-1509. DOI: 10.1063/1.370920  0.675
1999 Nelson MW, Schroeder PG, Schlaf R, Parkinson BA, Almgren CW, Erickson AN. Spatially resolved dopant profiling of patterned Si wafers by bias-applied phase-imaging tapping-mode atomic force microscopy Applied Physics Letters. 74: 1421-1423. DOI: 10.1063/1.123569  0.704
1999 Nelson MW, Schroeder PG, Schlaf R, Parkinson BA, Almgren CW, Erickson AN. Spatially resolved dopant profiling of patterned Si wafers by bias-applied phase-imaging tapping-mode atomic force microscopy Applied Physics Letters. 74: 1421-1423. DOI: 10.1063/1.123569  0.708
1999 Schlaf R, Crisafulli LA, Murata H, Merritt CD, Kafafi ZH, Schroeder PG, Nelson MW, Parkinson BA, Lee PA, Nebesny KW, Armstrong NR. Determination of the electronic structure of organic Schottky contacts by photoemission spectroscopy Proceedings of Spie - the International Society For Optical Engineering. 3797: 189-197.  0.63
1999 Nelson MW. Two-dimensional dopant profiling of patterned Si wafers using phase imaging tapping mode atomic force microscopy with applied biases Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 17: 1354-1360.  0.341
1998 Schlaf R, Schroeder PG, Nelson MW, Stübner R, Tiefenbacher S, Jungblut H, Parkinson BA. Influence of electrostatic forces on the imaging process in scanning tunneling microscopy Thin Solid Films. 331: 203-209. DOI: 10.1016/S0040-6090(98)00920-1  0.721
1997 Schlaf R, Louder D, Nelson MW, Parkinson BA. Influence of electrostatic forces on the investigation of dopant atoms in layered semiconductors by scanning tunneling microscopy/spectroscopy and atomic force microscopy Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 15: 1466-1472. DOI: 10.1116/1.580563  0.577
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