Yi-Mu Lee, Ph.D. - Publications
Affiliations: | North Carolina State University, Raleigh, NC |
Area:
ultra-thin Si oxyitride devicesYear | Citation | Score | |||
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2016 | Park K, Ikushiro H, Seo HS, Shin KO, Kim YI, Kim JY, Lee YM, Yano T, Holleran WM, Elias P, Uchida Y. ER stress stimulates production of the key antimicrobial peptide, cathelicidin, by forming a previously unidentified intracellular S1P signaling complex. Proceedings of the National Academy of Sciences of the United States of America. PMID 26903652 DOI: 10.1073/pnas.1504555113 | 0.411 | |||
2015 | Lee YM, Song BC, Yeum KJ. Impact of Volatile Anesthetics on Oxidative Stress and Inflammation. Biomed Research International. 2015: 242709. PMID 26101769 DOI: 10.1155/2015/242709 | 0.323 | |||
2004 | Lee YM, Wu Y, Lucovsky G. Breakdown and reliability of p-MOS devices with stacked RPECVD oxide/nitride gate dielectric under constant voltage stress Microelectronics Reliability. 44: 207-212. DOI: 10.1016/J.Microrel.2003.07.002 | 0.533 | |||
2003 | Lee YM, Wu Y, Bae C, Hong JG, Lucovsky G. Structural dependence of breakdown characteristics and electrical degradation in ultrathin RPECVD oxide/nitride gate dielectrics under constant voltage stress Solid-State Electronics. 47: 71-76. DOI: 10.1016/S0038-1101(02)00257-5 | 0.602 | |||
2002 | Lee Y, Wu Y, Hong JG, Lucovsky G. Degradation and SILC Effects of RPECVD sub-2.0nm Oxide/Nitride and Oxynitride Dielectrics Under Constant Current Stress Mrs Proceedings. 716. DOI: 10.1557/Proc-716-B2.9 | 0.604 | |||
1999 | Lucovsky G, Wu Y, Lee Y, Yang H, Niimi H. Independent Tunneling Reductions Relative to Homogeneous Oxide Dielectrics From i) Nitrided Interfaces, and ii) Physically-Thicker Stacked Oxide/Nitride and Oxide/Oxynitride Gate Dielectrics Mrs Proceedings. 592. DOI: 10.1557/Proc-592-317 | 0.513 | |||
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