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Dong Niu, Ph.D. - Publications

Affiliations: 
North Carolina State University, Raleigh, NC 
Area:
Nanotechnology
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17 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2016 Lyu L, Niu D, Xie H, Cao N, Zhang H, Zhang Y, Liu P, Gao Y. Orientation-dependent energy level alignment and film growth of 2,7-diocty[1]benzothieno[3,2-b]benzothiophene (C8-BTBT) on HOPG. The Journal of Chemical Physics. 144: 034701. PMID 26801037 DOI: 10.1063/1.4939839  0.357
2016 Xie H, Liu X, Lyu L, Niu D, Wang Q, Huang J, Gao Y. Effects of Precursor Ratios and Annealing on Electronic Structure and Surface Composition of CH3NH3PbI3 Perovskite Films Journal of Physical Chemistry C. 120: 215-220. DOI: 10.1021/Acs.Jpcc.5B07728  0.393
2016 Niu D, Wang Q, Zhang C, Cheng P, Wang Y, Zhang J, Ding G, Xie K, Shao J, Liu Y, Duan L. Preparation, characterization and application of high-temperature Al2O3 insulating film Surface and Coatings Technology. 291: 318-324. DOI: 10.1016/j.surfcoat.2016.02.056  0.356
2016 Tang J, Niu D, Yang Y, Zhou D, Yang C. Preparation of ScAlN films as a function of sputtering atmosphere Journal of Materials Science: Materials in Electronics. 1-6. DOI: 10.1007/s10854-016-4359-y  0.376
2016 Shang Y, Wang L, Niu D, Liu Z, Wang Y, Liu C. Effects of additive for anodizing electrolyte on anodic film of high silicon aluminum alloy International Journal of Electrochemical Science. 11: 1549-1557.  0.364
2015 Zhang L, Yang Y, Huang H, Lyu L, Zhang H, Cao N, Xie H, Gao X, Niu D, Gao Y. Thickness-dependent air-exposure-induced phase transition of CuPc ultrathin films to well-ordered one-dimensional nanocrystals on layered substrates Journal of Physical Chemistry C. 119: 4217-4223. DOI: 10.1021/Jp512613Z  0.333
2014 Liu X, Chen J, Luo M, Leng M, Xia Z, Zhou Y, Qin S, Xue DJ, Lv L, Huang H, Niu D, Tang J. Thermal evaporation and characterization of Sb2Se3 thin film for substrate Sb2Se3/CdS solar cells. Acs Applied Materials & Interfaces. 6: 10687-95. PMID 24922597 DOI: 10.1021/am502427s  0.366
2004 Niu D, Ashcraft RW, Hinkle C, Parsons GN. Effect of N 2 plasma on yttrium oxide and yttrium-oxynitride dielectrics Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 22: 445-451. DOI: 10.1116/1.1666880  0.655
2003 Niu D, Ashcraft RW, Chen Z, Stemmer S, Parsons GN. Chemical, physical, and electrical characterizations of oxygen plasma assisted chemical vapor deposited yttrium oxide on silicon Journal of the Electrochemical Society. 150: F102-F109. DOI: 10.1149/1.1566415  0.693
2003 Ulrich MD, Rowe JE, Niu D, Parsons GN. Bonding and structure of ultrathin yttrium oxide films for Si field effect transistor gate dielectric applications Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 21: 1792-1796. DOI: 10.1116/1.1593647  0.679
2003 Gougousi T, Niu D, Ashcraft RW, Parsons GN. Carbonate formation during post-deposition ambient exposure of high-k dielectrics Applied Physics Letters. 83: 3543-3545. DOI: 10.1063/1.1623316  0.694
2002 Stemmer S, Klenov DO, Chen Z, Niu D, Ashcraft RW, Parsons GN. Reactions of Y2O3 films with (001) Si substrates and with polycrystalline Si capping layers Applied Physics Letters. 81: 712-714. DOI: 10.1063/1.1496500  0.652
2002 Niu D, Ashcraft RW, Chen Z, Stemmer S, Parsons GN. Electron energy-loss spectroscopy analysis of interface structure of yttrium oxide gate dielectrics on silicon Applied Physics Letters. 81: 676-678. DOI: 10.1063/1.1496138  0.662
2002 Niu D, Ashcraft RW, Parsons GN. Water absorption and interface reactivity of yttrium oxide gate dielectrics on silicon Applied Physics Letters. 80: 3575-3577. DOI: 10.1063/1.1477268  0.651
2002 Niu D, Ashcraft RW, Kelly MJ, Chambers JJ, Klein TM, Parsons GN. Elementary reaction schemes for physical and chemical vapor deposition of transition metal oxides on silicon for high-k gate dielectric applications Journal of Applied Physics. 91: 6173-6180. DOI: 10.1063/1.1468253  0.683
1999 Klein T, Niu D, Parsons G. Effect of Al, Ta, and O Precursors on Growth and Properties of Al2O3 and Ta2O5 Thin Films Deposited by Triode PECVD Mrs Proceedings. 567. DOI: 10.1557/Proc-567-445  0.676
1999 Klein TM, Niu D, Epling WS, Li W, Maher DM, Hobbs CC, Hegde RI, Baumvol IJR, Parsons GN. Evidence of aluminum silicate formation during chemical vapor deposition of amorphous Al2O3 thin films on Si(100) Applied Physics Letters. 75: 4001-4003. DOI: 10.1063/1.125519  0.716
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