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Dennis W. Scott, Ph.D. - Publications

Affiliations: 
2013 Electrical and Computer Engineering University of California, Santa Barbara, Santa Barbara, CA, United States 
Area:
Electronics & Photonics
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50 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2017 Gutierrez-Aitken A, Wu BY, Scott D, Sato K, Poust B, Watanabe M, Monier C, Lin N, Zeng X, Nakamura E, Cheng P, Kaneshiro E, Chan W, Smorchkova I, Thai K, et al. A Meeting of Materials: Integrating Diverse Semiconductor Technologies for Improved Performance at Lower Cost Ieee Microwave Magazine. 18: 60-73. DOI: 10.1109/Mmm.2016.2635838  0.467
2017 Radisic V, Scott DW, Loi KK, Monier C, Lai R, Gutierrez-Aitken A. Heterogeneously Integrated W-Band Downconverter Ieee Microwave and Wireless Components Letters. 27: 739-741. DOI: 10.1109/Lmwc.2017.2724001  0.505
2015 Radisic V, Leong KMKH, Scott DW, Monier C, Mei XB, Deal WR, Gutierrez-Aitken A. Sub-millimeter wave InP technologies and integration techniques 2015 Ieee Mtt-S International Microwave Symposium, Ims 2015. DOI: 10.1109/MWSYM.2015.7167151  0.383
2015 Radisic V, Scott DW, Monier C, Wang S, Cavus A, Gutierrez-Aitken A, Deal W. InP HBT transferred substrate amplifiers operating to 600 GHz 2015 Ieee Mtt-S International Microwave Symposium, Ims 2015. DOI: 10.1109/MWSYM.2015.7166750  0.472
2014 Radisic V, Scott DW, Cavus A, Monier C. 220-GHz high-efficiency InP HBT Power Amplifiers Ieee Transactions On Microwave Theory and Techniques. 62: 3001-3005. DOI: 10.1109/Tmtt.2014.2362133  0.537
2014 Radisic V, Scott DW, Monier C. 50 mW 220 GHz InP HBT power amplifier MMIC Ieee Mtt-S International Microwave Symposium Digest. DOI: 10.1109/MWSYM.2014.6848257  0.472
2012 Scott DW, Monier C, Wang S, Radisic V, Nguyen P, Cavus A, Deal WR, Gutierrez-Aitken A. InP HBT transferred to higher thermal conductivity substrate Ieee Electron Device Letters. 33: 507-509. DOI: 10.1109/Led.2012.2185920  0.472
2012 Oyama B, Ching D, Thai K, Gutierrez-Aitken A, Cohen N, Scott D, Hennig K, Kaneshiro E, Nam P, Chen J, Chang-Chien P, Patel VJ. InP HBT/Si CMOS-based 13-Bit 1.33Gsps digital-to-analog converter with >70 dB SFDR Technical Digest - Ieee Compound Semiconductor Integrated Circuit Symposium, Csic. DOI: 10.1109/CSICS.2012.6340082  0.334
2011 Radisic V, Scott D, Wang S, Cavus A, Gutierrez-Aitken A, Deal WR. 235 GHz amplifier using 150 nm InP HBT high power density transistor Ieee Microwave and Wireless Components Letters. 21: 335-337. DOI: 10.1109/Lmwc.2011.2139196  0.57
2010 Ramaswamy A, Johansson LA, Krishnamachari U, Ristic S, Chen CH, Piels M, Bhardwaj A, Coldren LA, Rodwell MJ, Bowers JE, Yoshimitsu R, Scott DW, Davis R. Demonstration of a linear ultra-compact integrated coherent receiver Proceedings - 2010 Ieee International Topical Meeting On Microwave Photonics, Mwp 2010. 31-34. DOI: 10.1109/MWP.2010.5664237  0.593
2010 D'Amore M, Monier C, Lin ST, Oyama B, Scott DW, Kaneshiro EN, Chang PC, Sato KF, Niemi A, Dang L, Cavus A, Gutierrez-Aitken A, Oki AK. A 0.25 μm InP DHBT 200 GHz+ static frequency divider Ieee Journal of Solid-State Circuits. 45: 1992-2002. DOI: 10.1109/JSSC.2010.2058171  0.465
2009 Monier C, D'amore M, Scott D, Cavus A, Kaneshiro E, Lin S, Chang PC, Dang L, Sato K, Radisic V, Truong M, Nam P, Pascua D, Li D, Chan B, et al. 172 Ghz divide-by-two circuit using a 0.25-μm InP HBT technology Conference Proceedings - International Conference On Indium Phosphide and Related Materials. 24-27. DOI: 10.1109/ICIPRM.2009.5012410  0.501
2009 D'Amore M, Monier C, Lin S, Oyama B, Scott D, Kaneshiro E, Gutierrez-Aitken A, Oki A. A 0.25μm InP DHBT 200GHz+ static frequency divider Technical Digest - Ieee Compound Semiconductor Integrated Circuit Symposium, Csic. DOI: 10.1109/csics.2009.5315625  0.491
2008 Gutierrez-Aitken A, Chang-Chien P, Oyama B, Tornquist K, Thai K, Scott D, Sandhu R, Zhou J, Nam P, Phan W. Epitaxial and non-epitaxial heterogeneous integration technologies at NGST Materials Research Society Symposium Proceedings. 1068: 209-215. DOI: 10.1557/Proc-1068-C02-02  0.367
2008 Radisic V, Sawdai D, Scott D, Deal WR, Dang L, Li D, Cavus A, Fung A, Samoska L, To R, Gaier T, Lai R. Demonstration of 184 and 255-GHz amplifiers using inp hbt technology Ieee Microwave and Wireless Components Letters. 18: 281-283. DOI: 10.1109/Lmwc.2008.918952  0.584
2008 Scott DW, Sawdai D, Radisic V, Monier C, Dang L, Li D, Deal WR, Lai R, Gutierrez-Aitken A. InP double heterojunction bipolar transistor technology for 311 GHz oscillator and 255 GHz amplifier Conference Proceedings - International Conference On Indium Phosphide and Related Materials. DOI: 10.1109/ICIPRM.2008.4703035  0.478
2007 Radisic V, Sawdai D, Scott D, Deal WR, Dang L, Li D, Chen J, Fung A, Samoska L, Gaier T, Lai R. Demonstration of a 311-GHz fundamental oscillator using InP HBT technology Ieee Transactions On Microwave Theory and Techniques. 55: 2329-2334. DOI: 10.1109/Tmtt.2007.907722  0.524
2007 Monier C, Scott D, D'Amore M, Chan B, Dang L, Cavus A, Kaneshiro E, Nam P, Sato K, Cohen N, Lin S, Luo K, Wang J, Oyama B, Gutierrez A. High-speed InP HBT technology for advanced mixed-signal and digital applications Technical Digest - International Electron Devices Meeting, Iedm. 671-674. DOI: 10.1109/IEDM.2007.4419033  0.311
2006 Scott DW, Chang PC, Sawdai D, Dang L, Wang J, Barsky M, Phan W, Chan B, Oyama B, Gutierrez-Aitken A, Oki A. Sub-micrometer InP/InGaAs heterojunction bipolar transistors with f T = 400 GHz and fmax > 500 GHz Conference Proceedings - International Conference On Indium Phosphide and Related Materials. 2006: 100-103.  0.501
2005 Griffith Z, Dong Y, Scott D, Wei Y, Parthasarathy N, Dahlström M, Kadow C, Paidi V, Rodwell MJW, Urteaga M, Pierson R, Rowell P, Brar B, Lee S, Nguyen NX, et al. Transistor and circuit design for 100-200-GHz ICs Ieee Journal of Solid-State Circuits. 40: 2061-2068. DOI: 10.1109/JSSC.2005.854609  0.811
2004 Scott DW, Wei Y, Dong Y, Gossard AC, Rodwell MJ. A 183 GHz fτ and 165 GHz fmax regrown-emitter DHBT with abrupt InP emitter Ieee Electron Device Letters. 25: 360-362. DOI: 10.1109/LED.2004.829667  0.355
2004 Wei Y, Scott DW, Dong Y, Gossard AC, Rodwell MJ. A 160-GHz fT and 140-GHz fMAX submicrometer InP DHBT in MBE regrown-emitter technology Ieee Electron Device Letters. 25: 232-234. DOI: 10.1109/Led.2004.826521  0.63
2004 Wei Y, Scott DW, Dong Y, Gossard AC, Rodwell MJ. 280 GHz f T InP DHBT with 1.2 μm 2 base-emitter junction area in MBE regrown-emitter technology Device Research Conference - Conference Digest, Drc. 237-238. DOI: 10.1109/DRC.2004.1367885  0.336
2004 Parthasarathy N, Dong Y, Scott D, Urteaga M, Rodwell MJW. Planar device isolation for InP based DHBTs Device Research Conference - Conference Digest, Drc. 71-72. DOI: 10.1109/DRC.2004.1367788  0.507
2004 Rodwell M, Griffith Z, Scott D, Wei Y, Dong Y, Paidi V, Dahlström M, Parthasarathy N, Kadow C, Urteaga M, Pierson R, Rowell P, Brar B, Lee S, Nguyen N, et al. Transistor and circuit design for 100-200 GHz ICs Technical Digest - Ieee Compound Semiconductor Integrated Circuit Symposium, Csic. 207-210. DOI: 10.1109/CSICS.2004.1392539  0.812
2004 Scott DW, Kadow C, Dong Y, Wei Y, Gossard AC, Rodwell MJW. Low-resistance n-type polycrystalline InAs grown by molecular beam epitaxy Journal of Crystal Growth. 267: 35-41. DOI: 10.1016/J.Jcrysgro.2004.03.049  0.492
2003 Urteaga M, Krishnan S, Scott D, Wei Y, Dahlstrom M, Lee S, Rodwell MJW. Submicron InP-based HBTs for Ultra-high Frequency Amplifiers International Journal of High Speed Electronics and Systems. 13: 457-495. DOI: 10.1142/S0129156403001806  0.801
2003 Krishnan S, Scott D, Griffith Z, Urteaga M, Wei Y, Parthasarathy N, Rodwell M. An 8-GHz continuous-time Σ-Δ analog-digital converter in an InP-based HBT technology Ieee Transactions On Microwave Theory and Techniques. 51: 2555-2561. DOI: 10.1109/TMTT.2003.820176  0.796
2003 Urteaga M, Scott D, Krishnan S, Wei Y, Dahlström M, Griffith Z, Parthasarathy N, Rodwell MJW. G-Band (140-220-GHz) InP-Based HBT Amplifiers Ieee Journal of Solid-State Circuits. 38: 1451-1456. DOI: 10.1109/Jssc.2003.815906  0.811
2003 Dong Y, Scott DW, Wei Y, Gossard AC, Rodwell MJ. Low-resistance p-type polycrystalline GaSb grown by molecular beam epitaxy Journal of Crystal Growth. 256: 223-229. DOI: 10.1016/S0022-0248(03)01346-0  0.629
2003 Wei Y, Urteaga M, Griffith Z, Scott D, Xie S, Paidi V, Parthasarathy N, Rodwell M. 75 GHz 80 mW InP DHBT power amplifier Ieee Mtt-S International Microwave Symposium Digest. 2: 919-921.  0.79
2003 Krishnan S, Scott D, Urteaga M, Griffith Z, Wei Y, Dahlstrom M, Parthasarathy N, Rodwell M. An 8-GHz continuous-time Σ-Δ analog-digital converter in an InP-based DHBT technology Ieee Mtt-S International Microwave Symposium Digest. 2: 1063-1065.  0.749
2002 Scott D, Xing H, Krishnan S, Urteaga M, Parthasarathy N, Rodwell M. InAlAs/InGaAs/InP DHBTs with polycrystalline InAs extrinsic emitter regrowth Device Research Conference - Conference Digest, Drc. 2002: 171-172. DOI: 10.1109/DRC.2002.1029581  0.598
2002 Urteaga M, Scott D, Krishnan S, Wei Y, Dahlström M, Griffith Z, Parthasarathy N, Rodwell M. Multi-stage G-band (140-220 GHz) InP HBT amplifiers Technical Digest - Gaas Ic Symposium (Gallium Arsenide Integrated Circuit). 44-47.  0.779
2002 Wei Y, Sundararajan K, Urteaga M, Griffith Z, Scott D, Paidi V, Parthasarathy N, Rodwell M. 40 GHz MMIC Power Amplifier in InP DHBT Technology Proceedings Ieee Lester Eastman Conference On High Performance Devices. 352-357.  0.786
2002 Scott D, Urteaga M, Parthasarathy N, English JH, Rodwell MJW. Molecular Beam Deposition of Low-Resistance Polycrystalline InAs Proceedings Ieee Lester Eastman Conference On High Performance Devices. 207-212.  0.533
2002 Krishnan S, Griffith Z, Urteaga M, Wei Y, Scott D, Dahlstrom M, Parthasarathy N, Rodwell M. 87 GHz static frequency divider in an InP-based mesa DHBT technology Technical Digest - Gaas Ic Symposium (Gallium Arsenide Integrated Circuit). 294-296.  0.779
2001 RODWELL MJW, URTEAGA M, BETSER Y, MATHEW T, KRISHNAN P, SCOTT D, JAGANATHAN S, MENSA D, GUTHRIE J, PULLELA R, LEE Q, AGARWAL B, BHATTACHARYA U, LONG S, MARTIN SC, et al. SCALING OF InGaAs/InAlAsHBTs FOR HIGH SPEED MIXED-SIGNAL AND mm-WAVE ICs International Journal of High Speed Electronics and Systems. 11: 159-215. DOI: 10.1142/S0129156401000824  0.763
2001 Betser Y, Scott D, Mensa D, Jaganathan S, Mathew T, Rodwell MJ. InAlAs/InGaAs HBTs with simultaneously high values of Fτ and Fmax for mixed analog/digital applications Ieee Electron Device Letters. 22: 56-58. DOI: 10.1109/55.902830  0.709
2001 Jaganathan S, Krishnan S, Mensa D, Mathew T, Betser Y, Wei Y, Scott D, Urteaga M, Rodwell M. An 18-GHz continuous-time Σ-Δ analog-digital converter implemented in InP-transferred substrate HBT technology Ieee Journal of Solid-State Circuits. 36: 1343-1350. DOI: 10.1109/4.944661  0.804
2001 Rodwell MJW, Urteaga M, Mathew T, Scott D, Mensa D, Lee Q, Guthrie J, Betser Y, Martin SC, Smith RP, Jaganathan S, Krishnan S, Long SI, Pullela R, Agarwal B, et al. Submicron scaling of HBTs Ieee Transactions On Electron Devices. 48: 2606-2624. DOI: 10.1109/16.960387  0.826
2001 Mathew T, Jaganathan S, Scott D, Krishnan S, Wei Y, Urteaga M, Rodwell MJW, Long S. 2-bit adder: Carry and sum logic circuits at 19 GHz clock frequency in InAlAs/InGaAs HBT technology Electronics Letters. 37: 1156-1157. DOI: 10.1049/El:20010788  0.802
2001 Mathew T, Kim HJ, Scott D, Jaganathan S, Krishnan S, Wei Y, Urteaga M, Long S, Rodwell MJW. 75 GHz ECL static frequency divider using InAlAs/InGaAs HBTs Electronics Letters. 37: 667-668. DOI: 10.1049/El:20010465  0.791
2001 Mathew T, Jaganathan S, Scott D, Krishnan S, Wei Y, Urteaga M, Rodwell M, Long S. 2-bit adder carry and sum logic circuits clocking at 19 GHz clock frequency in transferred substrate HBT technology Conference Proceedings - International Conference On Indium Phosphide and Related Materials. 505-508.  0.695
2001 Urteaga M, Scott D, Mathew T, Krishnan S, Wei Y, Rodwell MJW. Single-stage G-band HBT amplifier with 6.3 dB gain at 175 GHz Technical Digest - Gaas Ic Symposium (Gallium Arsenide Integrated Circuit). 83-86.  0.461
2001 Urteaga M, Scott D, Mathew T, Krishnan S, Wei Y, Dahlstrom M, Rodwell M. Characteristics of submicron HBTs in the 140-220 GHz band Annual Device Research Conference Digest. 101-102.  0.399
2001 Krishnan S, Dahlstrom M, Mathew T, Wei Y, Scott D, Urteaga M, Rodwell MJW, Liu WK, Lubyshev D, Fang XM, Wu Y. InP/InGaAs/InP double heterojunction bipolar transistors with 300 GHz fmax Conference Proceedings - International Conference On Indium Phosphide and Related Materials. 31-34.  0.313
2001 Urteaga M, Scott D, Mathew T, Krishnan S, Wei Y, Rodwell MJW. 185 GHz monolithic amplifier in InGaAs/InAlAs transferred-substrate HBT technology Ieee Mtt-S International Microwave Symposium Digest. 1: 1713-1716.  0.458
2000 Guthrie JR, Urteaga M, Scott D, Mensa D, Mathew T, Lee Q, Krishnan S, Jaganathan S, Betser Y, Rodwell MJW. HBT MMIC 75 GHz and 78 GHz power amplifiers Conference Proceedings - International Conference On Indium Phosphide and Related Materials. 246-249.  0.792
2000 Jaganathan S, Mensa D, Mathew T, Betser Y, Krishnan S, Wei Y, Scott D, Urteaga M, Rodwell M. An 18 GHz continuous time Σ - Δ modulator implemented in InP transferred substrate HBT technology Technical Digest - Gaas Ic Symposium (Gallium Arsenide Integrated Circuit). 251-254.  0.697
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