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Can Bayram, Ph.D. - Publications

Affiliations: 
2011 Electrical and Computer Engineering Northwestern University, Evanston, IL 
Area:
Electronics and Electrical Engineering, Materials Science Engineering, Condensed Matter Physics
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Year Citation  Score
2020 Lee H, Bayram C. Improving Current ON/OFF Ratio and Subthreshold Swing of Schottky- Gate AlGaN/GaN HEMTs by Postmetallization Annealing Ieee Transactions On Electron Devices. 67: 2760-2764. DOI: 10.1109/Ted.2020.2992014  0.422
2020 Mohamed A, Park K, Bayram C, Dutta M, Stroscio MA. Phonon-assisted reduction of hot spot temperature in AlInN ternaries Journal of Physics D. 53: 365102. DOI: 10.1088/1361-6463/Ab904A  0.372
2020 Liu R, Tucker E, Lee SM, Kasarla K, McCormick C, Bayram C. Cp2Mg-induced transition metal ion contamination and performance loss in MOCVD-grown blue emitting InGaN/GaN multiple quantum wells Applied Physics Letters. 116: 192106. DOI: 10.1063/1.5142505  0.367
2019 Mohamed A, Park K, Bayram C, Dutta M, Stroscio M. Confined and interface optical phonon emission in GaN/InGaN double barrier quantum well heterostructures. Plos One. 14: e0214971. PMID 30998702 DOI: 10.1371/Journal.Pone.0214971  0.398
2019 Bayram C. Novel Semiconductor Quantum Devices Shaping Our Century [Guest Editorial] Ieee Nanotechnology Magazine. 13: 4-4. DOI: 10.1109/Mnano.2019.2893033  0.376
2019 Park K, Bayram C. Impact of dislocations on the thermal conductivity of gallium nitride studied by time-domain thermoreflectance Journal of Applied Physics. 126: 185103. DOI: 10.1063/1.5126970  0.344
2019 Liu R, McCormick C, Bayram C. Comparison of structural and optical properties of blue emitting In0.15Ga0.85N/GaN multi-quantum-well layers grown on sapphire and silicon substrates Aip Advances. 9: 025306. DOI: 10.1063/1.5078743  0.44
2018 Liu R, Schaller R, Chen CQ, Bayram C. High Internal Quantum Efficiency Ultraviolet Emission from Phase-Transition Cubic GaN Integrated on Nanopatterned Si(100). Acs Photonics. 5: 955-963. PMID 30775407 DOI: 10.1021/Acsphotonics.7B01231  0.371
2018 Park K, Mohamed A, Dutta M, Stroscio MA, Bayram C. Electron Scattering via Interface Optical Phonons with High Group Velocity in Wurtzite GaN-based Quantum Well Heterostructure. Scientific Reports. 8: 15947. PMID 30374108 DOI: 10.1038/S41598-018-34441-4  0.363
2017 Bayram C, Liu R. Polarization-free integrated gallium-nitride photonics. Proceedings of Spie--the International Society For Optical Engineering. 10111. PMID 29307953 DOI: 10.1117/12.2251607  0.398
2017 Bayram C. InGaN-based flexible light emitting diodes Proceedings of Spie. 10104. DOI: 10.1117/12.2251618  0.423
2017 Lee K, Bayram C, Piedra D, Sprogis E, Deligianni H, Krishnan B, Papasouliotis G, Paranjpe A, Aklimi E, Shepard K, Palacios T, Sadana D. GaN Devices on a 200 mm Si Platform Targeting Heterogeneous Integration Ieee Electron Device Letters. 38: 1094-1096. DOI: 10.1109/Led.2017.2720688  0.412
2017 Grady R, Bayram C. Simulation of zincblende AlGaN/GaN high electron mobility transistors for normally-off operation Journal of Physics D: Applied Physics. 50: 265104. DOI: 10.1088/1361-6463/Aa74Fc  0.364
2017 Perozek J, Lee H, Krishnan B, Paranjpe A, Reuter KB, Sadana DK, Bayram C. Investigation of structural, optical, and electrical characteristics of an AlGaN/GaN high electron mobility transistor structure across a 200 mm Si(1 1 1) substrate Journal of Physics D: Applied Physics. 50: 055103. DOI: 10.1088/1361-6463/Aa5208  0.42
2017 Park K, Stroscio MA, Bayram C. Investigation of electron mobility and saturation velocity limits in gallium nitride using uniaxial dielectric continuum model Journal of Applied Physics. 121: 245109. DOI: 10.1063/1.4990424  0.312
2016 Lee HP, Perozek J, Rosario LD, Bayram C. Investigation of AlGaN/GaN high electron mobility transistor structures on 200-mm silicon (111) substrates employing different buffer layer configurations. Scientific Reports. 6: 37588. PMID 27869222 DOI: 10.1038/Srep37588  0.43
2016 Liu R, Bayram C. Maximizing cubic phase gallium nitride surface coverage on nano-patterned silicon (100) Applied Physics Letters. 109: 042103. DOI: 10.1063/1.4960005  0.404
2016 Liu R, Bayram C. Cathodoluminescence study of luminescence centers in hexagonal and cubic phase GaN hetero-integrated on Si(100) Journal of Applied Physics. 120: 025106. DOI: 10.1063/1.4958335  0.329
2015 Razeghi M, Ghazinejad M, Bayram C, Yu JS. Front Matter: Volume 9552 Proceedings of Spie. 955201. DOI: 10.1117/12.2205074  0.346
2015 Bayram C, Kim J, Cheng CW, Ott J, Reuter KB, Bedell SW, Sadana DK, Park H, Dimitrakopoulos C. Vertical thinking in blue light emitting diodes: GaN-on-graphene technology Proceedings of Spie - the International Society For Optical Engineering. 9364. DOI: 10.1117/12.2082897  0.444
2015 Bayram C, Ott J, Shiu KT, Cheng CW, Zhu Y, Kim J, Sadana DK, Razeghi M. Polarization-free GaN emitters in the ultraviolet and visible spectra via heterointegration on CMOS-compatible Si (100) Proceedings of Spie - the International Society For Optical Engineering. 9370. DOI: 10.1117/12.2082894  0.561
2014 Kim J, Bayram C, Park H, Cheng CW, Dimitrakopoulos C, Ott JA, Reuter KB, Bedell SW, Sadana DK. Principle of direct van der Waals epitaxy of single-crystalline films on epitaxial graphene. Nature Communications. 5: 4836. PMID 25208642 DOI: 10.1038/Ncomms5836  0.322
2014 Bedell SW, Shahrjerdi D, Fogel K, Lauro P, Bayram C, Hekmatshoar B, Li N, Ott J, Sadana D. Advanced flexible electronics: Challenges and opportunities Proceedings of Spie - the International Society For Optical Engineering. 9083. DOI: 10.1117/12.2051716  0.386
2014 Bayram C, Ott JA, Shiu K, Cheng C, Zhu Y, Kim J, Razeghi M, Sadana DK. Gallium Nitride: Cubic Phase GaN on Nano-grooved Si (100) via Maskless Selective Area Epitaxy (Adv. Funct. Mater. 28/2014) Advanced Functional Materials. 24: 4491-4491. DOI: 10.1002/Adfm.201470185  0.478
2014 Bayram C, Ott JA, Shiu KT, Cheng CW, Zhu Y, Kim J, Razeghi M, Sadana DK. Cubic phase GaN on nano-grooved Si (100) via maskless selective area epitaxy Advanced Functional Materials. 24: 4492-4496. DOI: 10.1002/Adfm.201304062  0.567
2013 Bedell SW, Bayram C, Fogel K, Lauro P, Kiser J, Ott J, Zhu Y, Sadana D. Vertical light-emitting diode fabrication by controlled spalling Applied Physics Express. 6. DOI: 10.7567/Apex.6.112301  0.416
2013 Bayram C, Sadana DK, Razeghi M. AlGaN-based intersubband device technology The Wonder of Nanotechnology: Quantum Optoelectronic Devices and Applications. 175-206. DOI: 10.1117/3.1002245.Ch8  0.418
2013 Bayram C, Shiu KT, Zhu Y, Cheng CW, Sadana DK, Teherani FH, Rogers DJ, Sandana VE, Bove P, Zhang Y, Gautier S, Cho CY, Cicek E, Vashaei Z, McClintock R, et al. Engineering future light emitting diodes and photovoltaics with inexpensive materials: Integrating ZnO and Si into GaN-based devices Proceedings of Spie - the International Society For Optical Engineering. 8626. DOI: 10.1117/12.2009999  0.724
2013 Bayram C, Shiu KT, Zhu Y, Cheng CW, Sadana DK, Vashaei Z, Cicek E, McClintock R, Razeghi M. Gallium nitride on silicon for consumer and scalable photonics Proceedings of Spie - the International Society For Optical Engineering. 8631. DOI: 10.1117/12.2008788  0.685
2013 Zhang Y, Gautier S, Cho CY, Cicek E, Vashaei Z, McClintock R, Bayram C, Bai Y, Razeghi M. Near milliwatt power AlGaN-based ultraviolet light emitting diodes based on lateral epitaxial overgrowth of AlN on Si(111) Applied Physics Letters. 102. DOI: 10.1063/1.4773565  0.752
2013 Shahrjerdi D, Bedell SW, Bayram C, Lubguban CC, Fogel K, Lauro P, Ott JA, Hopstaken M, Gayness M, Sadana D. Ultralight high-efficiency flexible InGaP/(In)GaAs tandem solar cells on plastic Advanced Energy Materials. 3: 566-571. DOI: 10.1002/Aenm.201200827  0.322
2012 Bayram C, Sadana DK, Vashaei Z, Razeghi M. Reliable GaN-based resonant tunneling diodes with reproducible room-temperature negative differential resistance Proceedings of Spie - the International Society For Optical Engineering. 8268. DOI: 10.1117/12.913740  0.573
2012 Shahrjerdi D, Bedell SW, Ebert C, Bayram C, Hekmatshoar B, Fogel K, Lauro P, Gaynes M, Gokmen T, Ott JA, Sadana DK. High-efficiency thin-film InGaP/InGaAs/Ge tandem solar cells enabled by controlled spalling technology Applied Physics Letters. 100. DOI: 10.1063/1.3681397  0.327
2012 Bayram C. High-quality AlGaN/GaN superlattices for near- and mid-infrared intersubband transitions Journal of Applied Physics. 111. DOI: 10.1063/1.3675468  0.413
2011 Vashaei Z, Bayram C, McClintock R, Razeghi M. Effects of substrate quality and orientation on the characteristics of III-nitride resonant tunneling diodes Proceedings of Spie - the International Society For Optical Engineering. 7945. DOI: 10.1117/12.879858  0.698
2010 McClintock R, Cicek E, Vashaei Z, Bayram C, Razeghi M, Ulmer MP. III-Nitride based avalanche photo detectors Proceedings of Spie - the International Society For Optical Engineering. 7780. DOI: 10.1117/12.863962  0.692
2010 Cicek E, Vashaei Z, Bayram C, McClintock R, Razeghi M, Ulmer MP. Comparison of ultraviolet APDs grown on free-standing GaN and sapphire substrates Proceedings of Spie - the International Society For Optical Engineering. 7780. DOI: 10.1117/12.863905  0.719
2010 Razeghi M, Bayram C, Vashaei Z, Cicek E, McClintock R. III-Nitride Optoelectronic Devices: From ultraviolet detectors and visible emitters towards terahertz intersubband devices Photonics. 351-352. DOI: 10.1109/Photonics.2010.5698904  0.534
2010 Bayram C, Vashaei Z, Razeghi M. Reliability in room-temperature negative differential resistance characteristics of low-aluminum content AlGaN/GaN double-barrier resonant tunneling diodes Applied Physics Letters. 97. DOI: 10.1063/1.3515418  0.584
2010 Vashaei Z, Bayram C, Lavenus P, Razeghi M. Photoluminescence characteristics of polar and nonpolar AlGaN/GaN superlattices Applied Physics Letters. 97. DOI: 10.1063/1.3493185  0.548
2010 Bayram C, Vashaei Z, Razeghi M. Room temperature negative differential resistance characteristics of polar III-nitride resonant tunneling diodes Applied Physics Letters. 97. DOI: 10.1063/1.3484280  0.597
2010 Cicek E, Vashaei Z, McClintock R, Bayram C, Razeghi M. Geiger-mode operation of ultraviolet avalanche photodiodes grown on sapphire and free-standing GaN substrates Applied Physics Letters. 96. DOI: 10.1063/1.3457783  0.713
2010 Vashaei Z, Cicek E, Bayram C, McClintock R, Razeghi M. GaN avalanche photodiodes grown on m-plane freestanding GaN substrate Applied Physics Letters. 96. DOI: 10.1063/1.3432408  0.677
2010 Vashaei Z, Bayram C, Razeghi M. Demonstration of negative differential resistance in GaN/AlN resonant tunneling diodes at room temperature Journal of Applied Physics. 107. DOI: 10.1063/1.3372763  0.567
2010 Bayram C, Vashaei Z, Razeghi M. AlN/GaN double-barrier resonant tunneling diodes grown by metal-organic chemical vapor deposition Applied Physics Letters. 96. DOI: 10.1063/1.3294633  0.561
2009 Razeghi M, Bayram C. Material and design engineering of (Al)GaN for high-performance avalanche photodiodes and intersubband applications Proceedings of Spie - the International Society For Optical Engineering. 7366. DOI: 10.1117/12.819390  0.455
2009 Bayram C, Teherani FH, Rogers DJ, Razeghi M. Hybrid green LEDs based on n-ZnO/(InGaN/GaN)multi-quantum-wells/p-GaN Proceedings of Spie - the International Society For Optical Engineering. 7217. DOI: 10.1117/12.817033  0.381
2009 Pau JL, Bayram C, Giedraitis P, McClintock R, Razeghi M. GaN-based nanostructured photodetectors Proceedings of Spie - the International Society For Optical Engineering. 7222. DOI: 10.1117/12.814983  0.615
2009 McClintock R, Pau JL, Bayram C, Fain B, Giedraitis P, Razeghi M, Ulmer MP. III-Nitride avalanche photodiodes Proceedings of Spie - the International Society For Optical Engineering. 7222. DOI: 10.1117/12.809704  0.627
2009 Sandana VE, Rogers DJ, Hosseini Teherani F, McClintock R, Bayram C, Razeghi M, Drouhin HJ, Clochard MC, Sallet V, Garry G, Falyouni F. Comparison of ZnO nanostructures grown using pulsed laser deposition, metal organic chemical vapor deposition, and physical vapor transport Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 27: 1678-1683. DOI: 10.1116/1.3137990  0.656
2009 Bayram C, Razeghi M, Rogers DJ, Teherani FH. Fabrication and characterization of novel hybrid green light emitting diodes based on substituting n-type ZnO for n-type GaN in an inverted p-n junction Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 27: 1784-1788. DOI: 10.1116/1.3116590  0.587
2009 Teherani FH, Razeghi M, Rogers DJ, Bayram C, Mcclintock R. Hybrid green LEDs with n-type ZnO substituted for N-type GaN in an inverted P-N junction Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 401. DOI: 10.1109/LEOS.2009.5343231  0.691
2009 Bayram C, Ṕŕ-Laperne N, Razeghi M. Effects of well width and growth temperature on optical and structural characteristics of AlN/GaN superlattices grown by metal-organic chemical vapor deposition Applied Physics Letters. 95. DOI: 10.1063/1.3267101  0.522
2009 Ṕŕ-Laperne N, Bayram C, Nguyen-Tĥ L, McClintock R, Razeghi M. Tunability of intersubband absorption from 4.5 to 5.3 μm in a GaN/Al0.2Ga0.8N superlattices grown by metalorganic chemical vapor deposition Applied Physics Letters. 95. DOI: 10.1063/1.3242027  0.67
2009 Bayram C, Ṕŕ-Laperne N, McClintock R, Fain B, Razeghi M. Pulsed metal-organic chemical vapor deposition of high-quality AlN/GaN superlattices for near-infrared intersubband transitions Applied Physics Letters. 94. DOI: 10.1063/1.3104857  0.671
2009 Bayram C, Pau JL, McClintock R, Razeghi M. Comprehensive study of blue and green multi-quantum-well light-emitting diodes grown on conventional and lateral epitaxial overgrowth GaN Applied Physics B: Lasers and Optics. 95: 307-314. DOI: 10.1007/S00340-008-3321-Y  0.709
2009 Bayram C, Razeghi M. Stranski-Krastanov growth of InGaN quantum dots emitting in green spectra Applied Physics a: Materials Science and Processing. 96: 403-408. DOI: 10.1007/S00339-009-5186-2  0.507
2009 Bayram C, Razeghi M. Nitrides push performance of UV photodiodes Laser Focus World. 45: 47-51.  0.438
2008 McClintock R, Pau JL, Minder K, Bayram C, Razeghi M. III-Nitride photon counting avalanche photodiodes Proceedings of Spie - the International Society For Optical Engineering. 6900. DOI: 10.1117/12.776265  0.622
2008 Pau JL, McClintock R, Bayram C, Minder K, Silversmith D, Razeghi M. High optical response in forward biased (In,Ga)N-GaN multiquantum-well diodes under barrier illumination Ieee Journal of Quantum Electronics. 44: 346-353. DOI: 10.1109/Jqe.2007.914766  0.769
2008 Pau JL, Bayram C, Giedraitis P, McClintock R, Razeghi M. GaN nanostructured p-i-n photodiodes Applied Physics Letters. 93. DOI: 10.1063/1.3041641  0.727
2008 Bayram C, Pau JL, McClintock R, Razeghi M, Ulmer MP, Silversmith D. High quantum efficiency back-illuminated GaN avalanche photodiodes Applied Physics Letters. 93. DOI: 10.1063/1.3039061  0.725
2008 Bayram C, Pau JL, McClintock R, Razeghi M. Delta-doping optimization for high quality p -type GaN Journal of Applied Physics. 104. DOI: 10.1063/1.3000564  0.673
2008 Bayram C, Teherani FH, Rogers DJ, Razeghi M. A hybrid green light-emitting diode comprised of n-ZnO/ (InGaN/GaN) multi-quantum-wells/ p-GaN Applied Physics Letters. 93. DOI: 10.1063/1.2975165  0.604
2008 Bayram C, Pau JL, McClintock R, Razeghi M. Performance enhancement of GaN ultraviolet avalanche photodiodes with p -type δ -doping Applied Physics Letters. 92. DOI: 10.1063/1.2948857  0.707
2008 Pau JL, Bayram C, McClintock R, Razeghi M, Silversmith D. Back-illuminated separate absorption and multiplication GaN avalanche photodiodes Applied Physics Letters. 92. DOI: 10.1063/1.2897039  0.682
2007 Minder K, Teherani FH, Rogers D, Bayram C, McClintock R, Kung P, Razeghi M. Etching of ZnO towards the Development of ZnO Homostructure LEDs Proceedings of Spie - the International Society For Optical Engineering. 6474. DOI: 10.1117/12.712784  0.611
2007 Minder K, Pau JL, McClintock R, Kung P, Bayram C, Razeghi M, Silversmith D. Scaling in back-illuminated GaN avalanche photodiodes Applied Physics Letters. 91. DOI: 10.1063/1.2772199  0.769
2007 Pau JL, McClintock R, Minder K, Bayram C, Kung P, Razeghi M, Muñoz E, Silversmith D. Geiger-mode operation of back-illuminated GaN avalanche photodiodes Applied Physics Letters. 91. DOI: 10.1063/1.2759980  0.768
2007 McClintock R, Pau JL, Minder K, Bayram C, Kung P, Razeghi M. Hole-initiated multiplication in back-illuminated GaN avalanche photodiodes Applied Physics Letters. 90. DOI: 10.1063/1.2720712  0.757
2006 McClintock R, Minder K, Yasan A, Bayram C, Fuchs F, Kung P. Solar-blind avalanche photodiodes Proceedings of Spie - the International Society For Optical Engineering. 6127. DOI: 10.1117/12.660147  0.786
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