| Year |
Citation |
Score |
| 2023 |
Ewing JJ, Lynsky C, Wong MS, Wu F, Chow YC, Shapturenka P, Iza M, Nakamura S, Denbaars SP, Speck JS. High external quantum efficiency (6.5%) InGaN V-defect LEDs at 600 nm on patterned sapphire substrates. Optics Express. 31: 41351-41360. PMID 38087536 DOI: 10.1364/OE.503732 |
0.442 |
|
| 2023 |
Yao Y, Li H, Wang M, Li P, Lam M, Iza M, Speck JS, DenBaars SP, Nakamura S. High external quantum efficiency (6.8%) UV-A LEDs on AlN templates with quantum barrier optimization. Optics Express. 31: 28649-28657. PMID 37710681 DOI: 10.1364/OE.491622 |
0.302 |
|
| 2023 |
Li P, Li H, Yao Y, Qwah KS, Iza M, Speck JS, Nakamura S, DenBaars SP. Hybrid tunnel junction enabled independent junction control of cascaded InGaN blue/green micro-light-emitting diodes. Optics Express. 31: 7572-7578. PMID 36859886 DOI: 10.1364/OE.480393 |
0.336 |
|
| 2022 |
Anderson R, Zhang H, Trageser E, Palmquist N, Wong M, Nakamura S, DenBaars S. Green edge emitting lasers with porous GaN cladding. Optics Express. 30: 27674-27682. PMID 36236933 DOI: 10.1364/OE.460739 |
0.311 |
|
| 2021 |
Reilly CE, Keller S, Nakamura S, DenBaars SP. Metalorganic chemical vapor deposition of InN quantum dots and nanostructures. Light, Science & Applications. 10: 150. PMID 34285184 DOI: 10.1038/s41377-021-00593-8 |
0.339 |
|
| 2021 |
Li P, Li H, Yao Y, Zhang H, Lynsky C, Qwah KS, Iza M, Speck JS, Nakamura S, DenBaars SP. Fully transparent metal organic chemical vapor deposition-grown cascaded InGaN micro-light-emitting diodes with independent junction control. Optics Express. 29: 22001-22007. PMID 34265974 DOI: 10.1364/OE.430694 |
0.343 |
|
| 2020 |
Back J, Wong MS, Kearns J, DenBaars SP, Weisbuch C, Nakamura S. Violet semipolar (20-2-1) InGaN microcavity light-emitting diode with a 200 nm ultra-short cavity length. Optics Express. 28: 29991-30003. PMID 33114886 DOI: 10.1364/Oe.401640 |
0.472 |
|
| 2020 |
Zhang H, Cohen DA, Chan P, Wong MS, Li P, Li H, Nakamura S, Denbaars SP. High performance of a semipolar InGaN laser with a phase-shifted embedded hydrogen silsesquioxane (HSQ) grating. Optics Letters. 45: 5844-5847. PMID 33057299 DOI: 10.1364/Ol.403679 |
0.393 |
|
| 2020 |
Chow YC, Lee C, Wong MS, Wu YR, Nakamura S, DenBaars SP, Bowers JE, Speck JS. Dependence of carrier escape lifetimes on quantum barrier thickness in InGaN/GaN multiple quantum well photodetectors. Optics Express. 28: 23796-23805. PMID 32752371 DOI: 10.1364/Oe.399924 |
0.394 |
|
| 2020 |
Khoury M, Li H, Bonef B, Mates T, Wu F, Li P, Wong MS, Zhang H, Song J, Choi J, Speck JS, Nakamura S, DenBaars SP. 560 nm InGaN micro-LEDs on low-defect-density and scalable (20-21) semipolar GaN on patterned sapphire substrates. Optics Express. 28: 18150-18159. PMID 32680016 DOI: 10.1364/Oe.387561 |
0.434 |
|
| 2020 |
Lheureux G, Monavarian M, Anderson R, Decrescent RA, Bellessa J, Symonds C, Schuller JA, Speck JS, Nakamura S, DenBaars SP. Tamm plasmons in metal/nanoporous GaN distributed Bragg reflector cavities for active and passive optoelectronics. Optics Express. 28: 17934-17943. PMID 32679995 DOI: 10.1364/Oe.392546 |
0.373 |
|
| 2020 |
Li P, Zhang H, Li H, Iza M, Yao Y, Wong MS, Palmquist N, Speck JS, Nakamura S, DenBaars SP. Size-independent low voltage of InGaN micro-light-emitting diodes with epitaxial tunnel junctions using selective area growth by metalorganic chemical vapor deposition. Optics Express. 28: 18707-18712. PMID 32672165 DOI: 10.1364/Oe.394664 |
0.419 |
|
| 2020 |
Li H, Li P, Zhang H, Chow YC, Wong MS, Pinna S, Klamkin J, Speck JS, Nakamura S, DenBaars SP. Electrically driven, polarized, phosphor-free white semipolar (20-21) InGaN light-emitting diodes grown on semipolar bulk GaN substrate. Optics Express. 28: 13569-13575. PMID 32403828 DOI: 10.1364/Oe.384139 |
0.486 |
|
| 2020 |
Wong MS, Kearns JA, Lee C, Smith JM, Lynsky C, Lheureux G, Choi H, Kim J, Kim C, Nakamura S, Speck JS, DenBaars SP. Improved performance of AlGaInP red micro-light-emitting diodes with sidewall treatments. Optics Express. 28: 5787-5793. PMID 32121793 DOI: 10.1364/Oe.384127 |
0.438 |
|
| 2020 |
Pasayat SS, Gupta C, Wang Y, DenBaars SP, Nakamura S, Keller S, Mishra UK. Compliant Micron-Sized Patterned InGaN Pseudo-Substrates Utilizing Porous GaN. Materials (Basel, Switzerland). 13. PMID 31947918 DOI: 10.3390/Ma13010213 |
0.373 |
|
| 2020 |
Bonef B, Reilly CE, Wu F, Nakamura S, DenBaars SP, Keller S, Speck JS. Quantitative investigation of indium distribution in InN wetting layers and dots grown by metalorganic chemical vapor deposition Applied Physics Express. 13: 65005. DOI: 10.35848/1882-0786/Ab9167 |
0.337 |
|
| 2020 |
Gandrothula S, Kamikawa T, Araki M, Cohen D, Speck JS, Nakamura S, DenBaars SP. An approach to remove homoepitaxially grown GaN layers by cleavage from the substrate surface Applied Physics Express. 13: 41003. DOI: 10.35848/1882-0786/Ab7Bc9 |
0.403 |
|
| 2020 |
Zollner CJ, Almogbel AS, Yao Y, Wang M, Iza M, Speck JS, DenBaars SP, Nakamura S. Superlattice hole injection layers for UV LEDs grown on SiC Optical Materials Express. 10: 2171-2180. DOI: 10.1364/Ome.398146 |
0.428 |
|
| 2020 |
Wong MS, Nakamura S, DenBaars SP. Review—Progress in High Performance III-Nitride Micro-Light-Emitting Diodes Ecs Journal of Solid State Science and Technology. 9: 15012. DOI: 10.1149/2.0302001Jss |
0.368 |
|
| 2020 |
Alkhazragi O, Kang CH, Kong M, Liu G, Lee C, Li K, Zhang H, Wagstaff JM, Alhawaj F, Ng TK, Speck JS, Nakamura S, DenBaars SP, Ooi BS. 7.4-Gbit/s Visible-Light Communication Utilizing Wavelength-Selective Semipolar Micro-Photodetector Ieee Photonics Technology Letters. 1-1. DOI: 10.1109/Lpt.2020.2995110 |
0.349 |
|
| 2020 |
Lynsky C, Alhassan AI, Lheureux G, Bonef B, DenBaars SP, Nakamura S, Wu Y, Weisbuch C, Speck JS. Barriers to carrier transport in multiple quantum well nitride-based c-plane green light emitting diodes Physical Review Materials. 4. DOI: 10.1103/Physrevmaterials.4.054604 |
0.38 |
|
| 2020 |
Marcinkevičius S, Yapparov R, Kuritzky LY, Wu Y, Nakamura S, Speck JS. Low-temperature carrier transport across InGaN multiple quantum wells : Evidence of ballistic hole transport Physical Review B. 101: 75305. DOI: 10.1103/Physrevb.101.075305 |
0.344 |
|
| 2020 |
Pasayat SS, Hatui N, Li W, Gupta C, Nakamura S, Denbaars SP, Keller S, Mishra UK. Method of growing elastically relaxed crack-free AlGaN on GaN as substrates for ultra-wide bandgap devices using porous GaN Applied Physics Letters. 117: 62102. DOI: 10.1063/5.0017948 |
0.362 |
|
| 2020 |
Ley RT, Smith JM, Wong MS, Margalith T, Nakamura S, DenBaars SP, Gordon MJ. Revealing the importance of light extraction efficiency in InGaN/GaN microLEDs via chemical treatment and dielectric passivation Applied Physics Letters. 116: 251104. DOI: 10.1063/5.0011651 |
0.411 |
|
| 2020 |
Pasayat SS, Ley R, Gupta C, Wong MS, Lynsky C, Wang Y, Gordon MJ, Nakamura S, Denbaars SP, Keller S, Mishra UK. Color-tunable <10 μm square InGaN micro-LEDs on compliant GaN-on-porous-GaN pseudo-substrates Applied Physics Letters. 117: 61105. DOI: 10.1063/5.0011203 |
0.47 |
|
| 2020 |
Pasayat SS, Gupta C, Wong MS, Wang Y, Nakamura S, Denbaars SP, Keller S, Mishra UK. Growth of strain-relaxed InGaN on micrometer-sized patterned compliant GaN pseudo-substrates Applied Physics Letters. 116: 111101. DOI: 10.1063/5.0001480 |
0.479 |
|
| 2020 |
Smith JM, Ley R, Wong MS, Baek YH, Kang JH, Kim CH, Gordon MJ, Nakamura S, Speck JS, DenBaars SP. Comparison of size-dependent characteristics of blue and green InGaN microLEDs down to 1 μm in diameter Applied Physics Letters. 116: 71102. DOI: 10.1063/1.5144819 |
0.388 |
|
| 2020 |
Iyer PP, DeCrescent RA, Mohtashami Y, Lheureux G, Butakov NA, Alhassan A, Weisbuch C, Nakamura S, DenBaars SP, Schuller JA. Unidirectional luminescence from InGaN/GaN quantum-well metasurfaces Nature Photonics. 14: 543-548. DOI: 10.1038/S41566-020-0641-X |
0.42 |
|
| 2020 |
SaifAddin BK, Almogbel AS, Zollner CJ, Wu F, Bonef B, Iza M, Nakamura S, DenBaars SP, Speck JS. AlGaN deep-ultraviolet light-emitting diodes grown on SiC substrates Acs Photonics. 7: 554-561. DOI: 10.1021/Acsphotonics.9B00600 |
0.417 |
|
| 2020 |
Zhang H, Li H, Li P, Song J, Speck JS, Nakamura S, DenBaars SP. Room-Temperature Continuous-Wave Electrically Driven Semipolar (202̅1) Blue Laser Diodes Heteroepitaxially Grown on a Sapphire Substrate Acs Photonics. 7: 1662-1666. DOI: 10.1021/Acsphotonics.0C00766 |
0.348 |
|
| 2020 |
Huang X, Li D, Su P, Fu H, Chen H, Yang C, Zhou J, Qi X, Yang T, Montes J, Deng X, Fu K, DenBaars SP, Nakamura S, Ponce FA, et al. Anomalous carrier dynamics and localization effects in nonpolar m-plane InGaN/GaN quantum wells at high temperatures Nano Energy. 76: 105013. DOI: 10.1016/J.Nanoen.2020.105013 |
0.684 |
|
| 2020 |
Khoury M, Li H, Li P, Chow YC, Bonef B, Zhang H, Wong MS, Pinna S, Song J, Choi J, Speck JS, Nakamura S, DenBaars SP. Polarized monolithic white semipolar (20–21) InGaN light-emitting diodes grown on high quality (20–21) GaN/sapphire templates and its application to visible light communication Nano Energy. 67: 104236. DOI: 10.1016/J.Nanoen.2019.104236 |
0.462 |
|
| 2020 |
Chung RB, Sampath AV, Nakamura S. Strain relaxation process of undoped and Si-doped semipolar AlxGa1−xN grown on (202¯1) bulk GaN substrate Journal of Crystal Growth. 533: 125467. DOI: 10.1016/J.Jcrysgro.2019.125467 |
0.323 |
|
| 2020 |
Pasayat SS, Lund C, Tsukada Y, Catalano M, Wang L, Kim MJ, Nakamura S, Keller S, Mishra UK. Optimization of Digital Growth of Thick N-Polar InGaN by MOCVD Journal of Electronic Materials. 49: 3450-3454. DOI: 10.1007/S11664-019-07875-3 |
0.375 |
|
| 2020 |
Reilly CE, Nakamura S, DenBaars SP, Keller S. MOCVD Growth and Characterization of InN Quantum Dots Physica Status Solidi B-Basic Solid State Physics. 257: 1900508. DOI: 10.1002/Pssb.201900508 |
0.314 |
|
| 2020 |
Reilly CE, Lheureux G, Cozzan C, Zeitz E, Margalith T, Nakamura S, Seshadri R, Weisbuch C, DenBaars SP. Transmission Geometry Laser Lighting with A Compact Emitter Physica Status Solidi (a). DOI: 10.1002/Pssa.202000391 |
0.346 |
|
| 2020 |
Kearns JA, Back J, Palmquist NC, Cohen DA, DenBaars SP, Nakamura S. Inhomogeneous Current Injection and Filamentary Lasing of Semipolar (2021¯) Blue GaN‐Based Vertical‐Cavity Surface‐Emitting Lasers with Buried Tunnel Junctions Physica Status Solidi (a). 217: 1900718. DOI: 10.1002/Pssa.201900718 |
0.324 |
|
| 2019 |
Khoury M, Li H, Zhang H, Bonef B, Wong M, Wu F, Cohen D, De Mierry P, Vennéguès P, Speck JS, Nakamura S, DenBaars SP. Demonstration of Electrically Injected Semipolar Laser Diode Grown on Low Cost and Scalable Sapphire Substrates. Acs Applied Materials & Interfaces. PMID 31769651 DOI: 10.1021/Acsami.9B17525 |
0.41 |
|
| 2019 |
Lee S, Forman CA, Kearns J, Leonard JT, Cohen DA, Nakamura S, DenBaars SP. Demonstration of GaN-based vertical-cavity surface-emitting lasers with buried tunnel junction contacts. Optics Express. 27: 31621-31628. PMID 31684392 DOI: 10.1364/Oe.27.031621 |
0.427 |
|
| 2019 |
Anderson R, Cohen D, Mehari S, Nakamura S, DenBaars S. Electrical injection of a 440nm InGaN laser with lateral confinement by nanoporous-GaN. Optics Express. 27: 22764-22769. PMID 31510562 DOI: 10.1364/Oe.27.022764 |
0.448 |
|
| 2019 |
Saifaddin BK, Iza M, Foronda H, Almogbel A, Zollner CJ, Wu F, Alyamani A, Albadri A, Nakamura S, DenBaars SP, Speck JS. Impact of roughening density on the light extraction efficiency of thin-film flip-chip ultraviolet LEDs grown on SiC. Optics Express. 27: A1074-A1083. PMID 31510492 DOI: 10.1364/Oe.27.0A1074 |
0.435 |
|
| 2019 |
Kamikawa T, Gandrothula S, Araki M, Li H, Oliva VB, Wu F, Cohen D, Speck JS, Denbaars SP, Nakamura S. Realization of thin-film m-plane InGaN laser diode fabricated by epitaxial lateral overgrowth and mechanical separation from a reusable growth substrate. Optics Express. 27: 24717-24723. PMID 31510356 DOI: 10.1364/Oe.27.024717 |
0.398 |
|
| 2019 |
Li H, Wong MS, Khoury M, Bonef B, Zhang H, Chow Y, Li P, Kearns J, Taylor AA, De Mierry P, Hassan Z, Nakamura S, DenBaars SP. Study of efficient semipolar (11-22) InGaN green micro-light-emitting diodes on high-quality (11-22) GaN/sapphire template. Optics Express. 27: 24154-24160. PMID 31510309 DOI: 10.1364/Oe.27.024154 |
0.475 |
|
| 2019 |
Kearns JA, Back J, Cohen DA, DenBaars SP, Nakamura S. Demonstration of blue semipolar (202¯1¯) GaN-based vertical-cavity surface-emitting lasers. Optics Express. 27: 23707-23713. PMID 31510271 DOI: 10.1364/Oe.27.023707 |
0.429 |
|
| 2019 |
Zhang H, Cohen DA, Chan P, Wong MS, Mehari S, Becerra DL, Nakamura S, DenBaars SP. Continuous-wave operation of a semipolar InGaN distributed-feedback blue laser diode with a first-order indium tin oxide surface grating. Optics Letters. 44: 3106-3109. PMID 31199392 DOI: 10.1364/Ol.44.003106 |
0.348 |
|
| 2019 |
Hamdy KW, Young EC, Alhassan AI, Becerra DL, DenBaars SP, Speck JS, Nakamura S. Efficient tunnel junction contacts for high-power semipolar III-nitride edge-emitting laser diodes. Optics Express. 27: 8327-8334. PMID 31052652 DOI: 10.1364/Oe.27.008327 |
0.418 |
|
| 2019 |
Wong MS, Lee C, Myers DJ, Hwang D, Kearns JA, Li T, Speck JS, Nakamura S, DenBaars SP. Size-independent peak efficiency of III-nitride micro-light-emitting-diodes using chemical treatment and sidewall passivation Applied Physics Express. 12: 97004. DOI: 10.7567/1882-0786/Ab3949 |
0.378 |
|
| 2019 |
Abbas AS, Alyamani AY, Nakamura S, Dembaars SP. Enhancement of n-type GaN (20–21) semipolar surface morphology in photo-electrochemical undercut etching Applied Physics Express. 12: 36503. DOI: 10.7567/1882-0786/Ab028D |
0.429 |
|
| 2019 |
Mehari S, Cohen DA, Becerra DL, Nakamura S, DenBaars SP. Semipolar InGaN blue laser diodes with a low optical loss and a high material gain obtained by suppression of carrier accumulation in the p-waveguide region Japanese Journal of Applied Physics. 58: 20902. DOI: 10.7567/1347-4065/Aaf4B4 |
0.373 |
|
| 2019 |
Myers DJ, Gelžinytė K, Alhassan AI, Martinelli L, Peretti J, Nakamura S, Weisbuch C, Speck JS. Direct measurement of hot-carrier generation in a semiconductor barrier heterostructure: Identification of the dominant mechanism for thermal droop Physical Review B. 100: 125303. DOI: 10.1103/Physrevb.100.125303 |
0.3 |
|
| 2019 |
Reilly CE, Bonef B, Nakamura S, Speck JS, DenBaars SP, Keller S. Characterization of InGaN quantum dots grown by metalorganic chemical vapor deposition Semiconductor Science and Technology. 34: 125002. DOI: 10.1088/1361-6641/Ab4B93 |
0.354 |
|
| 2019 |
Pasayat SS, Gupta C, Acker-James D, Cohen DA, DenBaars SP, Nakamura S, Keller S, Mishra UK, Fellow I. Fabrication of relaxed InGaN pseudo-substrates composed of micron-sized pattern arrays with high fill factors using porous GaN Semiconductor Science and Technology. 34: 115020. DOI: 10.1088/1361-6641/Ab4372 |
0.316 |
|
| 2019 |
Lund C, Nakamura S, DenBaars SP, Mishra UK, Keller S. Properties of N-polar InGaN/GaN quantum wells grown with triethyl gallium and triethyl indium as precursors Semiconductor Science and Technology. 34: 75017. DOI: 10.1088/1361-6641/Ab1204 |
0.403 |
|
| 2019 |
SaifAddin BK, Almogbel A, Zollner CJ, Foronda H, Alyamani A, Albadri A, Iza M, Nakamura S, DenBaars SP, Speck JS. Fabrication technology for high light-extraction ultraviolet thin-film flip-chip (UV TFFC) LEDs grown on SiC Semiconductor Science and Technology. 34: 35007-35007. DOI: 10.1088/1361-6641/Aaf58F |
0.424 |
|
| 2019 |
Zollner CJ, Almogbel A, Yao Y, SaifAddin BK, Wu F, Iza M, DenBaars SP, Speck JS, Nakamura S. Reduced dislocation density and residual tension in AlN grown on SiC by metalorganic chemical vapor deposition Applied Physics Letters. 115: 161101. DOI: 10.1063/1.5123623 |
0.35 |
|
| 2019 |
Reilly CE, Lund C, Nakamura S, Mishra UK, DenBaars SP, Keller S. Infrared luminescence from N-polar InN quantum dots and thin films grown by metal organic chemical vapor deposition Applied Physics Letters. 114: 241103. DOI: 10.1063/1.5109734 |
0.419 |
|
| 2019 |
Marcinkevičius S, Yapparov R, Kuritzky LY, Wu Y, Nakamura S, DenBaars SP, Speck JS. Interwell carrier transport in InGaN/(In)GaN multiple quantum wells Applied Physics Letters. 114: 151103. DOI: 10.1063/1.5092585 |
0.401 |
|
| 2019 |
Huang X, Li W, Fu H, Li D, Zhang C, Chen H, Fang Y, Fu K, DenBaars SP, Nakamura S, Goodnick SM, Ning C, Fan S, Zhao Y. High-Temperature Polarization-Free III-Nitride Solar Cells with Self-Cooling Effects Acs Photonics. 6: 2096-2103. DOI: 10.1021/Acsphotonics.9B00655 |
0.672 |
|
| 2019 |
Becerra DL, Cohen DA, Mehari S, DenBaars SP, Nakamura S. Compensation effects of high oxygen levels in semipolar AlGaN electron blocking layers and their mitigation via growth optimization Journal of Crystal Growth. 507: 118-123. DOI: 10.1016/J.Jcrysgro.2018.11.008 |
0.345 |
|
| 2018 |
Wong MS, Hwang D, Alhassan AI, Lee C, Ley R, Nakamura S, DenBaars SP. High efficiency of III-nitride micro-light-emitting diodes by sidewall passivation using atomic layer deposition. Optics Express. 26: 21324-21331. PMID 30119435 DOI: 10.1364/Oe.26.021324 |
0.447 |
|
| 2018 |
Myzaferi A, Mughal AJ, Cohen DA, Farrell RM, Nakamura S, Speck JS, DenBaars SP. Zinc oxide clad limited area epitaxy semipolar III-nitride laser diodes. Optics Express. 26: 12490-12498. PMID 29801286 DOI: 10.1364/Oe.26.012490 |
0.445 |
|
| 2018 |
Shen C, Ng TK, Lee C, Nakamura S, Speck JS, DenBaars SP, Alyamani AY, El-Desouki MM, Ooi BS. Semipolar InGaN quantum-well laser diode with integrated amplifier for visible light communications. Optics Express. 26: A219-A226. PMID 29609284 DOI: 10.1364/Oe.26.00A219 |
0.427 |
|
| 2018 |
Alhassan AI, Young NG, Farrell RM, Pynn C, Wu F, Alyamani AY, Nakamura S, DenBaars SP, Speck JS. Development of high performance green c-plane III-nitride light-emitting diodes. Optics Express. 26: 5591-5601. PMID 29529761 DOI: 10.1364/Oe.26.005591 |
0.493 |
|
| 2018 |
Mehari S, Cohen DA, Becerra DL, Nakamura S, DenBaars SP. Demonstration of enhanced continuous-wave operation of blue laser diodes on a semipolar 202¯1¯ GaN substrate using indium-tin-oxide/thin-p-GaN cladding layers. Optics Express. 26: 1564-1572. PMID 29402030 DOI: 10.1364/Oe.26.001564 |
0.424 |
|
| 2018 |
Cozzan C, Lheureux G, O'Dea N, Levin EE, Graser J, Sparks TD, Nakamura S, DenBaars SP, Weisbuch C, Seshadri R. Stable, Heat-Conducting Phosphor Composites for High-Power Laser Lighting. Acs Applied Materials & Interfaces. PMID 29400946 DOI: 10.1021/Acsami.8B00074 |
0.39 |
|
| 2018 |
Lee S, Forman CA, Lee C, Kearns J, Young EC, Leonard JT, Cohen DA, Speck JS, Nakamura S, DenBaars SP. GaN-based vertical-cavity surface-emitting lasers with tunnel junction contacts grown by metal-organic chemical vapor deposition Applied Physics Express. 11: 62703. DOI: 10.7567/Apex.11.062703 |
0.447 |
|
| 2018 |
Alhassan AI, Young EC, Alyamani AY, Albadri A, Nakamura S, DenBaars SP, Speck JS. Reduced-droop green III-nitride light-emitting diodes utilizing GaN tunnel junction Applied Physics Express. 11: 42101. DOI: 10.7567/Apex.11.042101 |
0.472 |
|
| 2018 |
Khoury M, Li H, Bonef B, Kuritzky LY, Mughal AJ, Nakamura S, Speck JS, DenBaars SP. Semipolar GaN templates on sapphire: 432 nm InGaN light-emitting diodes and light extraction simulations Applied Physics Express. 11: 36501. DOI: 10.7567/Apex.11.036501 |
0.43 |
|
| 2018 |
Hwang D, Mughal AJ, Wong MS, Alhassan AI, Nakamura S, DenBaars SP. Micro-light-emitting diodes with III-nitride tunnel junction contacts grown by metalorganic chemical vapor deposition Applied Physics Express. 11: 12102. DOI: 10.7567/Apex.11.012102 |
0.453 |
|
| 2018 |
Zhao Y, Fu H, Wang GT, Nakamura S. Toward ultimate efficiency: progress and prospects on planar and 3D nanostructured nonpolar and semipolar InGaN light-emitting diodes Advances in Optics and Photonics. 10: 246. DOI: 10.1364/Aop.10.000246 |
0.712 |
|
| 2018 |
Hahn W, Lentali J-, Polovodov P, Young N, Nakamura S, Speck J, Weisbuch C, Filoche M, Wu Y-, Piccardo M, Maroun F, Martinelli L, Lassailly Y, Peretti J. Evidence of nanoscale Anderson localization induced by intrinsic compositional disorder in InGaN/GaN quantum wells by scanning tunneling luminescence spectroscopy Physical Review B. 98: 45305. DOI: 10.1103/Physrevb.98.045305 |
0.339 |
|
| 2018 |
Lund C, Agarwal A, Romanczyk B, Mates T, Nakamura S, DenBaars SP, Mishra UK, Keller S. Investigation of Mg δ-doping for low resistance N-polar p-GaN films grown at reduced temperatures by MOCVD Semiconductor Science and Technology. 33: 095014. DOI: 10.1088/1361-6641/Aad5Cf |
0.373 |
|
| 2018 |
Yonkee BP, Young EC, DenBaars SP, Speck JS, Nakamura S. High reflectivity Ohmic contacts to n-GaN utilizing vacuum annealed aluminum Semiconductor Science and Technology. 33: 15015. DOI: 10.1088/1361-6641/Aa972C |
0.324 |
|
| 2018 |
Espenlaub AC, Alhassan AI, Nakamura S, Weisbuch C, Speck JS. Auger-generated hot carrier current in photo-excited forward biased single quantum well blue light emitting diodes Applied Physics Letters. 112: 141106. DOI: 10.1063/1.5021475 |
0.422 |
|
| 2018 |
Lund C, Catalano M, Wang L, Wurm C, Mates T, Kim M, Nakamura S, DenBaars SP, Mishra UK, Keller S. Metal-organic chemical vapor deposition of N-polar InN quantum dots and thin films on vicinal GaN Journal of Applied Physics. 123: 055702. DOI: 10.1063/1.5009904 |
0.434 |
|
| 2018 |
Mounir C, Koslow IL, Wernicke T, Kneissl M, Kuritzky LY, Adamski NL, Oh SH, Pynn CD, DenBaars SP, Nakamura S, Speck JS, Schwarz UT. On the optical polarization properties of semipolar ( 20 2 ¯ 1 ) and ( 20 2 ¯ 1 ¯ ) InGaN/GaN quantum wells Journal of Applied Physics. 123: 85705. DOI: 10.1063/1.5008263 |
0.442 |
|
| 2018 |
Forman CA, Lee S, Young EC, Kearns JA, Cohen DA, Leonard JT, Margalith T, DenBaars SP, Nakamura S. Continuous-wave operation of m-plane GaN-based vertical-cavity surface-emitting lasers with a tunnel junction intracavity contact Applied Physics Letters. 112: 111106. DOI: 10.1063/1.5007746 |
0.425 |
|
| 2018 |
Griffiths S, Pimputkar S, Kearns J, Malkowski TF, Doherty MF, Speck JS, Nakamura S. Growth kinetics of basic ammonothermal gallium nitride crystals Journal of Crystal Growth. 501: 74-80. DOI: 10.1016/J.Jcrysgro.2018.08.028 |
0.324 |
|
| 2018 |
Malkowski TF, Speck JS, DenBaars SP, Nakamura S. An exploratory study of acidic ammonothermal growth in a TZM autoclave at high temperatures Journal of Crystal Growth. 499: 85-89. DOI: 10.1016/J.Jcrysgro.2018.07.025 |
0.304 |
|
| 2018 |
Foronda HM, Wu F, Zollner C, Alif ME, Saifaddin B, Almogbel A, Iza M, Nakamura S, DenBaars SP, Speck JS. Low threading dislocation density aluminum nitride on silicon carbide through the use of reduced temperature interlayers Journal of Crystal Growth. 483: 134-139. DOI: 10.1016/J.Jcrysgro.2017.11.027 |
0.361 |
|
| 2018 |
Feezell D, Nakamura S. Invention, development, and status of the blue light-emitting diode, the enabler of solid-state lighting Comptes Rendus Physique. 19: 113-133. DOI: 10.1016/J.Crhy.2017.12.001 |
0.359 |
|
| 2017 |
Kuritzky LY, Espenlaub AC, Yonkee BP, Pynn CD, DenBaars SP, Nakamura S, Weisbuch C, Speck JS. High wall-plug efficiency blue III-nitride LEDs designed for low current density operation. Optics Express. 25: 30696-30707. PMID 29221097 DOI: 10.1364/Oe.25.030696 |
0.34 |
|
| 2017 |
Li H, Khoury M, Bonef B, Alhassan AI, Mughal AJ, Azimah E, Samsudin MEA, De Mierry P, Nakamura S, Speck J, DenBaars SP. Efficient semipolar (11-22) 550 nm yellow/green InGaN light-emitting diodes on low defect density (11-22) GaN/sapphire templates. Acs Applied Materials & Interfaces. PMID 28960058 DOI: 10.1021/Acsami.7B11718 |
0.481 |
|
| 2017 |
Lee C, Shen C, Cozzan C, Farrell RM, Speck JS, Nakamura S, Ooi BS, DenBaars SP. Gigabit-per-second white light-based visible light communication using near-ultraviolet laser diode and red-, green-, and blue-emitting phosphors. Optics Express. 25: 17480-17487. PMID 28789239 DOI: 10.1364/Oe.25.017480 |
0.433 |
|
| 2017 |
Myzaferi A, Reading AH, Farrell RM, Cohen DA, Nakamura S, DenBaars SP. Semipolar III-nitride laser diodes with zinc oxide cladding. Optics Express. 25: 16922-16930. PMID 28789192 DOI: 10.1364/Oe.25.016922 |
0.432 |
|
| 2017 |
Kowsz SJ, Young EC, Yonkee BP, Pynn CD, Farrell RM, Speck JS, DenBaars SP, Nakamura S. Using tunnel junctions to grow monolithically integrated optically pumped semipolar III-nitride yellow quantum wells on top of electrically injected blue quantum wells. Optics Express. 25: 3841-3849. PMID 28241595 DOI: 10.1364/Oe.25.003841 |
0.494 |
|
| 2017 |
Mughal AJ, Young EC, Alhassan AI, Back J, Nakamura S, Speck JS, DenBaars SP. Polarization-enhanced InGaN/GaN-based hybrid tunnel junction contacts to GaN p–n diodes and InGaN LEDs Applied Physics Express. 10: 121006. DOI: 10.7567/Apex.10.121006 |
0.41 |
|
| 2017 |
Lund C, Hestroffer K, Hatui N, Nakamura S, DenBaars SP, Mishra UK, Keller S. Digital growth of thick N-polar InGaN films on relaxed InGaN pseudosubstrates Applied Physics Express. 10: 111001. DOI: 10.7567/Apex.10.111001 |
0.309 |
|
| 2017 |
Khoury M, Li H, Kuritzky LY, Mughal AJ, DeMierry P, Nakamura S, Speck JS, DenBaars SP. 444 nm InGaN light emitting diodes on low-defect-density GaN templates on patterned sapphire Applied Physics Express. 10: 106501. DOI: 10.7567/Apex.10.106501 |
0.469 |
|
| 2017 |
Shen C, Lee C, Stegenburgs E, Lerma JH, Ng TK, Nakamura S, DenBaars SP, Alyamani AY, El-Desouki MM, Ooi BS. Semipolar III–nitride quantum well waveguide photodetector integrated with laser diode for on-chip photonic system Applied Physics Express. 10: 42201. DOI: 10.7567/Apex.10.042201 |
0.399 |
|
| 2017 |
Hwang D, Mughal A, Pynn CD, Nakamura S, DenBaars SP. Sustained high external quantum efficiency in ultrasmall blue III–nitride micro-LEDs Applied Physics Express. 10: 32101. DOI: 10.7567/Apex.10.032101 |
0.424 |
|
| 2017 |
Lee S, Mishkat-Ul-Masabih S, Leonard JT, Feezell DF, Cohen DA, Speck JS, Nakamura S, DenBaars SP. Smooth and selective photo-electrochemical etching of heavily doped GaN:Si using a mode-locked 355 nm microchip laser Applied Physics Express. 10: 11001. DOI: 10.7567/Apex.10.011001 |
0.411 |
|
| 2017 |
Uždavinys TK, Becerra DL, Ivanov R, DenBaars SP, Nakamura S, Speck JS, Marcinkevičius S. Influence of well width fluctuations on recombination properties in semipolar InGaN quantum wells studied by time- and spatially-resolved near-field photoluminescence Optical Materials Express. 7: 3116-3123. DOI: 10.1364/Ome.7.003116 |
0.353 |
|
| 2017 |
Shen C, Ng TK, Lee C, Leonard JT, Nakamura S, Speck JS, Denbaars SP, Alyamani AY, El-Desouki MM, Ooi BS. Semipolar InGaN-based superluminescent diodes for solid-state lighting and visible light communications Proceedings of Spie. 10104. DOI: 10.1117/12.2251144 |
0.405 |
|
| 2017 |
Ivanov R, Marcinkevičius S, Mensi MD, Martinez O, Kuritzky LY, Myers DJ, Nakamura S, Speck JS. Polarization-Resolved Near-Field Spectroscopy of Localized States in m-Plane InxGa1−xN/GaN Quantum Wells Physical Review Applied. 7. DOI: 10.1103/Physrevapplied.7.064033 |
0.37 |
|
| 2017 |
Enatsu Y, Gupta C, Keller S, Nakamura S, Mishra UK. P–n junction diodes with polarization induced p-type graded InxGa1–xN layer Semiconductor Science and Technology. 32: 105013. DOI: 10.1088/1361-6641/Aa89D7 |
0.387 |
|
| 2017 |
Lund C, Romanczyk B, Catalano M, Wang Q, Li W, DiGiovanni D, Kim MJ, Fay P, Nakamura S, DenBaars SP, Mishra UK, Keller S. Metal-organic chemical vapor deposition of high quality, high indium composition N-polar InGaN layers for tunnel devices Journal of Applied Physics. 121: 185707. DOI: 10.1063/1.4983300 |
0.442 |
|
| 2017 |
Huang X, Fu H, Chen H, Zhang X, Lu Z, Montes J, Iza M, DenBaars SP, Nakamura S, Zhao Y. Nonpolar and semipolar InGaN/GaN multiple-quantum-well solar cells with improved carrier collection efficiency Applied Physics Letters. 110: 161105. DOI: 10.1063/1.4980139 |
0.699 |
|
| 2017 |
Bonef B, Catalano M, Lund C, Denbaars SP, Nakamura S, Mishra UK, Kim MJ, Keller S. Indium segregation in N-polar InGaN quantum wells evidenced by energy dispersive X-ray spectroscopy and atom probe tomography Applied Physics Letters. 110: 143101. DOI: 10.1063/1.4979786 |
0.352 |
|
| 2017 |
Ivanov R, Marcinkevičius S, Uždavinys TK, Kuritzky LY, Nakamura S, Speck JS. Scanning near-field microscopy of carrier lifetimes in m-plane InGaN quantum wells Applied Physics Letters. 110: 31109. DOI: 10.1063/1.4974297 |
0.394 |
|
| 2017 |
Mensi M, Ivanov R, Uzdavinys TK, Kelchner KM, Nakamura S, DenBaars SP, Speck JS, Marcinkevicius S. Direct Measurement of Nanoscale Lateral Carrier Diffusion: Toward Scanning Diffusion Microscopy Acs Photonics. 5: 528-534. DOI: 10.1021/Acsphotonics.7B01061 |
0.309 |
|
| 2017 |
Li P, Bonef B, Khoury M, Lheureux G, Li H, Kang J, Nakamura S, DenBaars SP. Carrier dynamics of two distinct localized centers in 530 nm InGaN green light-emitting diodes Superlattices and Microstructures. 113: 684-689. DOI: 10.1016/J.Spmi.2017.11.058 |
0.391 |
|
| 2017 |
Forman C, Leonard J, Yonkee B, Pynn C, Mates T, Cohen D, Farrell R, Margalith T, DenBaars S, Speck J, Nakamura S. Semipolar (202̅1) III-Nitride P-Down LEDs with in situ anneal to reduce the Mg memory effect Journal of Crystal Growth. 464: 197-200. DOI: 10.1016/J.Jcrysgro.2016.11.058 |
0.375 |
|
| 2017 |
Lund C, Nakamura S, DenBaars SP, Mishra UK, Keller S. Growth of high purity N-polar (In,Ga)N films Journal of Crystal Growth. 464: 127-131. DOI: 10.1016/J.Jcrysgro.2016.11.039 |
0.337 |
|
| 2017 |
Mughal AJ, Carberry B, Speck JS, Nakamura S, DenBaars SP. Structural and Optical Properties of Group III Doped Hydrothermal ZnO Thin Films Journal of Electronic Materials. 46: 1821-1825. DOI: 10.1007/S11664-016-5235-5 |
0.367 |
|
| 2017 |
Mishkat-Ul-Masabih S, Leonard J, Cohen D, Nakamura S, Feezell D. Techniques to reduce thermal resistance in flip‐chip GaN‐based VCSELs Physica Status Solidi (a). 214: 1600819. DOI: 10.1002/Pssa.201600819 |
0.328 |
|
| 2016 |
Hwang D, Yonkee BP, Addin BS, Farrell RM, Nakamura S, Speck JS, DenBaars S. Photoelectrochemical liftoff of LEDs grown on freestanding c-plane GaN substrates. Optics Express. 24: 22875-22880. PMID 27828354 DOI: 10.1364/Oe.24.022875 |
0.422 |
|
| 2016 |
Shen C, Lee C, Ng TK, Nakamura S, Speck JS, DenBaars SP, Alyamani AY, El-Desouki MM, Ooi BS. High-speed 405-nm superluminescent diode (SLD) with 807-MHz modulation bandwidth. Optics Express. 24: 20281-20286. PMID 27607634 DOI: 10.1364/Oe.24.020281 |
0.42 |
|
| 2016 |
Alhassan AI, Farrell RM, Saifaddin B, Mughal A, Wu F, DenBaars SP, Nakamura S, Speck JS. High luminous efficacy green light-emitting diodes with AlGaN cap layer. Optics Express. 24: 17868-17873. PMID 27505754 DOI: 10.1364/Oe.24.017868 |
0.487 |
|
| 2016 |
Shen C, Ng TK, Leonard JT, Pourhashemi A, Nakamura S, DenBaars SP, Speck JS, Alyamani AY, El-Desouki MM, Ooi BS. High-brightness semipolar (2021¯) blue InGaN/GaN superluminescent diodes for droop-free solid-state lighting and visible-light communications. Optics Letters. 41: 2608-2611. PMID 27244426 DOI: 10.1364/Ol.41.002608 |
0.457 |
|
| 2016 |
Yonkee BP, Young EC, Lee C, Leonard JT, DenBaars SP, Speck JS, Nakamura S. Demonstration of a III-nitride edge-emitting laser diode utilizing a GaN tunnel junction contact. Optics Express. 24: 7816-7822. PMID 27137064 DOI: 10.1364/Oe.24.007816 |
0.433 |
|
| 2016 |
Cantore M, Pfaff N, Farrell RM, Speck JS, Nakamura S, DenBaars SP. High luminous flux from single crystal phosphor-converted laser-based white lighting system. Optics Express. 24: A215-21. PMID 26832576 DOI: 10.1364/Oe.24.00A215 |
0.424 |
|
| 2016 |
Oh SH, Yonkee BP, Cantore M, Farrell RM, Speck JS, Nakamura S, DenBaars SP. Semipolar III-nitride light-emitting diodes with negligible efficiency droop up to ∼1 W Applied Physics Express. 9. DOI: 10.7567/Apex.9.102102 |
0.477 |
|
| 2016 |
Becerra DL, Cohen DA, Farrell RM, Denbaars SP, Nakamura S. Effects of active region design on gain and carrier injection and transport of CW (2021) semipolar InGaN laser diodes Applied Physics Express. 9. DOI: 10.7567/Apex.9.092104 |
0.419 |
|
| 2016 |
Enatsu Y, Gupta C, Laurent M, Keller S, Nakamura S, Mishra UK. Polarization induced three-dimensional hole gas in compositionally graded In x Ga1− x N layer Applied Physics Express. 9: 75502. DOI: 10.7567/Apex.9.075502 |
0.321 |
|
| 2016 |
Yonkee BP, SaifAddin B, Leonard JT, DenBaars SP, Nakamura S. Flip-chip blue LEDs grown on {2021} bulk GaN substrates utilizing photoelectrochemical etching for substrate removal Applied Physics Express. 9. DOI: 10.7567/Apex.9.056502 |
0.416 |
|
| 2016 |
Young EC, Yonkee BP, Wu F, Oh SH, DenBaars SP, Nakamura S, Speck JS. Hybrid tunnel junction contacts to III-nitride light-emitting diodes Applied Physics Express. 9. DOI: 10.7567/Apex.9.022102 |
0.442 |
|
| 2016 |
Mensi MD, Becerra DL, Ivanov R, Marcinkevičius S, Nakamura S, Denbaars SP, Speck JS. Properties of near-field photoluminescence in green emitting single and multiple semipolar (2021) plane InGaN/GaN quantum wells Optical Materials Express. 6: 39-45. DOI: 10.1364/Ome.6.000039 |
0.374 |
|
| 2016 |
Kowsz SJ, Pynn CD, Wu F, Farrell RM, Speck JS, DenBaars SP, Nakamura S. Designing optically pumped InGaN quantum wells with long wavelength emission for a phosphor-free device with polarized white-light emission Proceedings of Spie. 9748. DOI: 10.1117/12.2209661 |
0.456 |
|
| 2016 |
Leonard JT, Young EC, Yonkee BP, Cohen DA, Shen C, Margalith T, Ng TK, Denbaars SP, Ooi BS, Speck JS, Nakamura S. Comparison of nonpolar III-nitride vertical-cavity surface-emitting lasers with tunnel junction and ITO intracavity contacts Proceedings of Spie. 9748. DOI: 10.1117/12.2206211 |
0.431 |
|
| 2016 |
Fu H, Lu Z, Zhao X, Zhang Y, DenBaars SP, Nakamura S, Zhao Y. Study of Low-Efficiency Droop in Semipolar ( $20\bar{2}\bar{1}$ ) InGaN Light-Emitting Diodes by Time-Resolved Photoluminescence Journal of Display Technology. 12: 736-741. DOI: 10.1109/Jdt.2016.2521618 |
0.703 |
|
| 2016 |
Kuritzky LY, Becerra DL, Abbas AS, Nedy J, Nakamura S, Denbaars SP, Cohen DA. Chemically assisted ion beam etching of laser diode facets on nonpolar and semipolar orientations of GaN Semiconductor Science and Technology. 31. DOI: 10.1088/0268-1242/31/7/075008 |
0.399 |
|
| 2016 |
Yonkee BP, Young EC, DenBaars SP, Nakamura S, Speck JS. Silver free III-nitride flip chip light-emitting-diode with wall plug efficiency over 70% utilizing a GaN tunnel junction Applied Physics Letters. 109: 191104. DOI: 10.1063/1.4967501 |
0.466 |
|
| 2016 |
Cozzan C, Brady MJ, O’Dea N, Levin EE, Nakamura S, DenBaars SP, Seshadri R. Monolithic translucent BaMgAl10O17:Eu2+ phosphors for laser-driven solid state lighting Aip Advances. 6: 105005. DOI: 10.1063/1.4964925 |
0.383 |
|
| 2016 |
Lee C, Zhang C, Becerra DL, Lee S, Forman CA, Oh SH, Farrell RM, Speck JS, Nakamura S, Bowers JE, Denbaars SP. Dynamic characteristics of 410 nm semipolar (2021) III-nitride laser diodes with a modulation bandwidth of over 5 GHz Applied Physics Letters. 109. DOI: 10.1063/1.4962430 |
0.412 |
|
| 2016 |
Myzaferi A, Reading AH, Cohen DA, Farrell RM, Nakamura S, Speck JS, Denbaars SP. Transparent conducting oxide clad limited area epitaxy semipolar III-nitride laser diodes Applied Physics Letters. 109. DOI: 10.1063/1.4960791 |
0.386 |
|
| 2016 |
Pynn CD, Kowsz SJ, Oh SH, Gardner H, Farrell RM, Nakamura S, Speck JS, DenBaars SP. Green semipolar III-nitride light-emitting diodes grown by limited area epitaxy Applied Physics Letters. 109: 41107. DOI: 10.1063/1.4960001 |
0.45 |
|
| 2016 |
Kowsz SJ, Pynn CD, Oh SH, Farrell RM, DenBaars SP, Nakamura S. Using band engineering to tailor the emission spectra of trichromatic semipolar InGaN light-emitting diodes for phosphor-free polarized white light emission Journal of Applied Physics. 120: 33102. DOI: 10.1063/1.4958308 |
0.443 |
|
| 2016 |
Suihkonen S, Pimputkar S, Speck JS, Nakamura S. Infrared absorption of hydrogen-related defects in ammonothermal GaN Applied Physics Letters. 108. DOI: 10.1063/1.4952388 |
0.75 |
|
| 2016 |
Becerra DL, Kuritzky LY, Nedy J, Saud Abbas A, Pourhashemi A, Farrell RM, Cohen DA, DenBaars SP, Speck JS, Nakamura S. Measurement and analysis of internal loss and injection efficiency for continuous-wave blue semipolar (20 2 ¯ 1 ¯) III-nitride laser diodes with chemically assisted ion beam etched facets Applied Physics Letters. 108. DOI: 10.1063/1.4943143 |
0.385 |
|
| 2016 |
Young NG, Farrell RM, Oh S, Cantore M, Wu F, Nakamura S, DenBaars SP, Weisbuch C, Speck JS. Polarization field screening in thick (0001) InGaN/GaN single quantum well light-emitting diodes Applied Physics Letters. 108. DOI: 10.1063/1.4941815 |
0.452 |
|
| 2016 |
Leonard JT, Yonkee BP, Cohen DA, Megalini L, Lee S, Speck JS, Denbaars SP, Nakamura S. Nonpolar III-nitride vertical-cavity surface-emitting laser with a photoelectrochemically etched air-gap aperture Applied Physics Letters. 108. DOI: 10.1063/1.4940380 |
0.445 |
|
| 2016 |
Pourhashemi A, Farrell RM, Cohen DA, Becerra DL, DenBaars SP, Nakamura S. CW operation of high-power blue laser diodes with polished facets on semi-polar ( 20 2 ¯ 1 ¯ ) GaN substrates Electronics Letters. 52: 2003-2005. DOI: 10.1049/El.2016.3055 |
0.415 |
|
| 2016 |
Mughal AJ, Oh S, Myzaferi A, Nakamura S, Speck JS, DenBaars SP. High-power LEDs using Ga-doped ZnO current-spreading layers Electronics Letters. 52: 304-306. DOI: 10.1049/El.2015.3982 |
0.399 |
|
| 2016 |
Shen C, Ng TK, Leonard JT, Pourhashemi A, Oubei HM, Alias MS, Nakamura S, Denbaars SP, Speck JS, Alyamani AY, Eldesouki MM, Ooi BS. High-Modulation-Efficiency, Integrated Waveguide Modulator-Laser Diode at 448 nm Acs Photonics. 3: 262-268. DOI: 10.1021/Acsphotonics.5B00599 |
0.46 |
|
| 2016 |
Pimputkar S, Malkowski TF, Griffiths S, Espenlaub A, Suihkonen S, Speck JS, Nakamura S. Stability of materials in supercritical ammonia solutions Journal of Supercritical Fluids. 110: 193-229. DOI: 10.1016/J.Supflu.2015.10.020 |
0.728 |
|
| 2016 |
Young NG, Farrell RM, Iza M, Nakamura S, DenBaars SP, Weisbuch C, Speck JS. Germanium doping of GaN by metalorganic chemical vapor deposition for polarization screening applications Journal of Crystal Growth. 455: 105-110. DOI: 10.1016/J.Jcrysgro.2016.09.074 |
0.431 |
|
| 2016 |
Griffiths S, Pimputkar S, Speck JS, Nakamura S. On the solubility of gallium nitride in supercritical ammonia–sodium solutions Journal of Crystal Growth. 456: 5-14. DOI: 10.1016/J.Jcrysgro.2016.08.041 |
0.338 |
|
| 2016 |
Sintonen S, Kivisaari P, Pimputkar S, Suihkonen S, Schulz T, Speck JS, Nakamura S. Incorporation and effects of impurities in different growth zones within basic ammonothermal GaN Journal of Crystal Growth. 456: 43-50. DOI: 10.1016/J.Jcrysgro.2016.08.040 |
0.34 |
|
| 2016 |
Dollen PV, Pimputkar S, Alreesh MA, Nakamura S, Speck JS. A new system for sodium flux growth of bulk GaN. Part II: in situ investigation of growth processes Journal of Crystal Growth. 456: 67-72. DOI: 10.1016/J.Jcrysgro.2016.08.018 |
0.336 |
|
| 2016 |
Dollen PV, Pimputkar S, Alreesh MA, Albrithen H, Suihkonen S, Nakamura S, Speck JS. A new system for sodium flux growth of bulk GaN. Part I: System development Journal of Crystal Growth. 456: 58-66. DOI: 10.1016/J.Jcrysgro.2016.07.044 |
0.335 |
|
| 2016 |
Pimputkar S, Speck JS, Nakamura S. Basic ammonothermal GaN growth in molybdenum capsules Journal of Crystal Growth. 456: 15-20. DOI: 10.1016/J.Jcrysgro.2016.07.034 |
0.341 |
|
| 2016 |
Megalini L, Shenoy R, Rose K, Speck JP, Bowers JE, Nakamura S, Cohen DA, DenBaars SP. Estimation of roughness-induced scattering losses in III-nitride laser diodes with a photoelectrochemically etched current aperture (Phys. Status Solidi A 4∕2016) Physica Status Solidi (a). 213: 1096-1096. DOI: 10.1002/Pssa.201670624 |
0.31 |
|
| 2016 |
Megalini L, Shenoy R, Rose K, Speck JP, Bowers JE, Nakamura S, Cohen DA, Denbaars SP. Estimation of roughness-induced scattering losses in III-nitride laser diodes with a photoelectrochemically etched current aperture Physica Status Solidi (a) Applications and Materials Science. DOI: 10.1002/Pssa.201532540 |
0.362 |
|
| 2015 |
Lee C, Shen C, Oubei HM, Cantore M, Janjua B, Ng TK, Farrell RM, El-Desouki MM, Speck JS, Nakamura S, Ooi BS, DenBaars SP. 2 Gbit/s data transmission from an unfiltered laser-based phosphor-converted white lighting communication system. Optics Express. 23: 29779-87. PMID 26698461 DOI: 10.1364/Oe.23.029779 |
0.381 |
|
| 2015 |
Chi YC, Hsieh DH, Lin CY, Chen HY, Huang CY, He JH, Ooi B, DenBaars SP, Nakamura S, Kuo HC, Lin GR. Phosphorous Diffuser Diverged Blue Laser Diode for Indoor Lighting and Communication. Scientific Reports. 5: 18690. PMID 26687289 DOI: 10.1038/Srep18690 |
0.575 |
|
| 2015 |
Lee C, Zhang C, Cantore M, Farrell RM, Oh SH, Margalith T, Speck JS, Nakamura S, Bowers JE, DenBaars SP. 4 Gbps direct modulation of 450 nm GaN laser for high-speed visible light communication. Optics Express. 23: 16232-7. PMID 26193595 DOI: 10.1364/Oe.23.016232 |
0.401 |
|
| 2015 |
Megalini L, Kuritzky LY, Leonard JT, Shenoy R, Rose K, Nakamura S, Speck JS, Cohen DA, DenBaars SP. Selective and controllable lateral photoelectrochemical etching of nonpolar and semipolar InGaN/GaN multiple quantum well active regions Applied Physics Express. 8. DOI: 10.7567/Apex.8.066502 |
0.425 |
|
| 2015 |
Kuritzky LY, Myers DJ, Nedy J, Kelchner KM, Nakamura S, DenBaars SP, Weisbuch C, Speck JS. Electroluminescence characteristics of blue InGaN quantum wells on m-plane GaN "double miscut" substrates Applied Physics Express. 8. DOI: 10.7567/Apex.8.061002 |
0.416 |
|
| 2015 |
Megalini L, Becerra DL, Farrell RM, Pourhashemi A, Speck JS, Nakamura S, DenBaars SP, Cohen DA. Continuous-wave operation of a (2021) InGaN laser diode with a photoelectrochemically etched current aperture Applied Physics Express. 8. DOI: 10.7567/Apex.8.042701 |
0.409 |
|
| 2015 |
Nakamura S. Background story of the invention of efficient blue InGaN light emitting diodes International Journal of Modern Physics B. 29. DOI: 10.3367/Ufnr.2014.12.037747 |
0.39 |
|
| 2015 |
Nakamura S. Future and present technologies of solid state lighting (Presentation Video) Proceedings of Spie. 9383. DOI: 10.1117/12.2197203 |
0.402 |
|
| 2015 |
Marcinkevičius S, Gelžinyte K, Ivanov R, Zhao Y, Nakamura S, Denbaars SP, Speck JS. Spatial variations of optical properties of semipolar InGaN quantum wells Proceedings of Spie - the International Society For Optical Engineering. 9363. DOI: 10.1117/12.2076973 |
0.694 |
|
| 2015 |
Nakamura S. Nobel Lecture: Background story of the invention of efficient blue InGaN light emitting diodes Reviews of Modern Physics. 87. DOI: 10.1103/Revmodphys.87.1139 |
0.39 |
|
| 2015 |
Nedy JG, Young NG, Kelchner KM, Hu Y, Farrell RM, Nakamura S, DenBaars SP, Weisbuch C, Speck JS. Low damage dry etch for III-nitride light emitters Semiconductor Science and Technology. 30. DOI: 10.1088/0268-1242/30/8/085019 |
0.461 |
|
| 2015 |
Yonkee BP, Farrell RM, Leonard JT, DenBaars SP, Speck JS, Nakamura S. Demonstration of low resistance ohmic contacts to p-type (2021) GaN Semiconductor Science and Technology. 30. DOI: 10.1088/0268-1242/30/7/075007 |
0.364 |
|
| 2015 |
Marcinkevičius S, Sztein A, Nakamura S, Speck JS. Properties of sub-band edge states in AlInN studied by time-resolved photoluminescence of a AlInN/GaN heterostructure Semiconductor Science and Technology. 30. DOI: 10.1088/0268-1242/30/11/115017 |
0.799 |
|
| 2015 |
Keller S, Lund C, Whyland T, Hu Y, Neufeld C, Chan S, Wienecke S, Wu F, Nakamura S, Speck JS, Denbaars SP, Mishra UK. InGaN lattice constant engineering via growth on (In,Ga)N/GaN nanostripe arrays Semiconductor Science and Technology. 30. DOI: 10.1088/0268-1242/30/10/105020 |
0.39 |
|
| 2015 |
Ivanov R, Marcinkevičius S, Zhao Y, Becerra DL, Nakamura S, DenBaars SP, Speck JS. Impact of carrier localization on radiative recombination times in semipolar (20 2 ¯ 1) plane InGaN/GaN quantum wells Applied Physics Letters. 107. DOI: 10.1063/1.4936386 |
0.664 |
|
| 2015 |
Leonard JT, Cohen DA, Yonkee BP, Farrell RM, Denbaars SP, Speck JS, Nakamura S. Smooth e-beam-deposited tin-doped indium oxide for III-nitride vertical-cavity surface-emitting laser intracavity contacts Journal of Applied Physics. 118. DOI: 10.1063/1.4931883 |
0.369 |
|
| 2015 |
Kowsz SJ, Pynn CD, Oh SH, Farrell RM, Speck JS, DenBaars SP, Nakamura S. Demonstration of phosphor-free polarized white light emission from monolithically integrated semipolar InGaN quantum wells Applied Physics Letters. 107. DOI: 10.1063/1.4930304 |
0.458 |
|
| 2015 |
Leonard JT, Young EC, Yonkee BP, Cohen DA, Margalith T, DenBaars SP, Speck JS, Nakamura S. Demonstration of a III-nitride vertical-cavity surface-emitting laser with a III-nitride tunnel junction intracavity contact Applied Physics Letters. 107. DOI: 10.1063/1.4929944 |
0.423 |
|
| 2015 |
Leonard JT, Cohen DA, Yonkee BP, Farrell RM, Margalith T, Lee S, Denbaars SP, Speck JS, Nakamura S. Nonpolar III-nitride vertical-cavity surface-emitting lasers incorporating an ion implanted aperture Applied Physics Letters. 107. DOI: 10.1063/1.4926365 |
0.435 |
|
| 2015 |
Piccardo M, Iveland J, Martinelli L, Nakamura S, Choi JW, Speck JS, Weisbuch C, Peretti J. Low-energy electro- and photo-emission spectroscopy of GaN materials and devices Journal of Applied Physics. 117. DOI: 10.1063/1.4913928 |
0.388 |
|
| 2015 |
Gelžinyte K, Ivanov R, Marcinkevičius S, Zhao Y, Becerra DL, Nakamura S, Denbaars SP, Speck JS. High spatial uniformity of photoluminescence spectra in semipolar (202¯1) plane InGaN/GaN quantum wells Journal of Applied Physics. 117. DOI: 10.1063/1.4905854 |
0.69 |
|
| 2015 |
Pan CC, Yan Q, Fu H, Zhao Y, Wu YR, Van De Walle C, Nakamura S, Denbaars SP. High optical power and low-efficiency droop blue light-emitting diodes using compositionally step-graded InGaN barrier Electronics Letters. 51: 1187-1189. DOI: 10.1049/El.2015.1647 |
0.711 |
|
| 2015 |
Pimputkar S, Suihkonen S, Imade M, Mori Y, Speck JS, Nakamura S. Free electron concentration dependent sub-bandgap optical absorption characterization of bulk GaN crystals Journal of Crystal Growth. 432: 49-53. DOI: 10.1016/J.Jcrysgro.2015.09.016 |
0.763 |
|
| 2015 |
Young EC, Yonkee BP, Wu F, Saifaddin BK, Cohen DA, DenBaars SP, Nakamura S, Speck JS. Ultraviolet light emitting diodes by ammonia molecular beam epitaxy on metamorphic (202-1) AlGaN/GaN buffer layers Journal of Crystal Growth. DOI: 10.1016/J.Jcrysgro.2015.02.081 |
0.458 |
|
| 2015 |
Kelchner KM, Kuritzky LY, Nakamura S, Denbaars SP, Speck JS. Stable vicinal step orientations in m-plane GaN Journal of Crystal Growth. 411: 56-62. DOI: 10.1016/J.Jcrysgro.2014.10.032 |
0.358 |
|
| 2014 |
Koslow IL, McTaggart C, Wu F, Nakamura S, Speck JS, DenBaars SP. Improved performance of (2021) long-wavelength light-emitting diodes grown with wide quantum wells on stress-relaxed InxGa1-xN buffer layers Applied Physics Express. 7. DOI: 10.7567/Apex.7.031003 |
0.452 |
|
| 2014 |
Zhao Y, Wu F, Yang T, Wu Y, Nakamura S, Speck JS. Atomic-scale nanofacet structure in semipolar $(20\bar{2}\bar{1})$ and $(20\bar{2}1)$ InGaN single quantum wells Applied Physics Express. 7: 025503. DOI: 10.7567/Apex.7.025503 |
0.658 |
|
| 2014 |
Hardy MT, Wu F, Huang CY, Zhao Y, Feezell DF, Nakamura S, Speck JS, DenBaars SP. Impact of p-GaN thermal damage and barrier composition on semipolar green laser diodes Ieee Photonics Technology Letters. 26: 43-46. DOI: 10.1109/Lpt.2013.2288927 |
0.774 |
|
| 2014 |
Becerra DL, Zhao Y, Oh SH, Pynn CD, Fujito K, Denbaars SP, Nakamura S. High-power low-droop violet semipolar (30 3 ¯ 1 ¯) InGaN/GaN light-emitting diodes with thick active layer design Applied Physics Letters. 105. DOI: 10.1063/1.4900793 |
0.72 |
|
| 2014 |
Marcinkevičius S, Gelžinyte K, Zhao Y, Nakamura S, Denbaars SP, Speck JS. Carrier redistribution between different potential sites in semipolar (20 2 ¯ 1) InGaN quantum wells studied by near-field photoluminescence Applied Physics Letters. 105. DOI: 10.1063/1.4896034 |
0.693 |
|
| 2014 |
Holder CO, Leonard JT, Farrell RM, Cohen DA, Yonkee B, Speck JS, DenBaars SP, Nakamura S, Feezell DF. Erratum: “Nonpolar III-nitride vertical-cavity surface emitting lasers with a polarization ratio of 100% fabricated using photoelectrochemical etching” [Appl. Phys. Lett. 105, 031111 (2014)] Applied Physics Letters. 105: 89902. DOI: 10.1063/1.4894638 |
0.788 |
|
| 2014 |
Iveland J, Piccardo M, Martinelli L, Peretti J, Choi JW, Young N, Nakamura S, Speck JS, Weisbuch C. Origin of electrons emitted into vacuum from InGaN light emitting diodes Applied Physics Letters. 105. DOI: 10.1063/1.4892473 |
0.394 |
|
| 2014 |
Wu F, Zhao Y, Romanov A, Denbaars SP, Nakamura S, Speck JS. Stacking faults and interface rougheningin semipolar (20 2 ̄ 1 ̄) single InGaN quantum wells for long wavelength emission Applied Physics Letters. 104. DOI: 10.1063/1.4871512 |
0.693 |
|
| 2014 |
Ji Y, Liu W, Erdem T, Chen R, Tiam Tan S, Zhang ZH, Ju Z, Zhang X, Sun H, Sun XW, Zhao Y, Denbaars SP, Nakamura S, Volkan Demir H. Comparative study of field-dependent carrier dynamics and emission kinetics of InGaN/GaN light-emitting diodes grown on (11 2 ̄ 2) semipolar versus (0001) polar planes Applied Physics Letters. 104. DOI: 10.1063/1.4870840 |
0.708 |
|
| 2014 |
Marcinkevičius S, Ivanov R, Zhao Y, Nakamura S, Denbaars SP, Speck JS. Highly polarized photoluminescence and its dynamics in semipolar (20 2 ̄ 1 ̄) InGaN/GaN quantum well Applied Physics Letters. 104. DOI: 10.1063/1.4869459 |
0.688 |
|
| 2014 |
Sztein A, Bowers JE, Denbaars SP, Nakamura S. Polarization field engineering of GaN/AlN/AlGaN superlattices for enhanced thermoelectric properties Applied Physics Letters. 104. DOI: 10.1063/1.4863420 |
0.795 |
|
| 2014 |
Pimputkar S, Kawabata S, Speck JS, Nakamura S. Improved growth rates and purity of basic ammonothermal GaN Journal of Crystal Growth. 403: 7-17. DOI: 10.1016/J.Jcrysgro.2014.06.017 |
0.752 |
|
| 2014 |
Koslow IL, Hardy MT, Shan Hsu P, Wu F, Romanov AE, Young EC, Nakamura S, Denbaars SP, Speck JS. Onset of plastic relaxation in semipolar (11 2 ̄ 2) In xGa1-xN/GaN heterostructures Journal of Crystal Growth. 388: 48-53. DOI: 10.1016/J.Jcrysgro.2013.10.027 |
0.37 |
|
| 2014 |
Marcinkevičius S, Kelchner KM, Nakamura S, Denbaars SP, Speck JS. Optical properties and carrier dynamics in m -plane InGaN quantum wells Physica Status Solidi (C) Current Topics in Solid State Physics. 11: 690-693. DOI: 10.1002/Pssc.201300430 |
0.437 |
|
| 2013 |
Zhao Y, Yan Q, Feezell D, Fujito K, Van de Walle CG, Speck JS, DenBaars SP, Nakamura S. Optical polarization characteristics of semipolar (3031) and (3031) InGaN/GaN light-emitting diodes. Optics Express. 21: A53-9. PMID 23389275 DOI: 10.1364/Oe.21.000A53 |
0.692 |
|
| 2013 |
Keller S, Farrell RM, Iza M, Terao Y, Young N, Mishra UK, Nakamura S, DenBaars SP, Speck JS. Influence of the structure parameters on the relaxation of semipolar InGaN/GaN multi quantum wells Japanese Journal of Applied Physics. 52. DOI: 10.7567/Jjap.52.08Jc10 |
0.45 |
|
| 2013 |
Kawaguchi Y, Huang CY, Wu YR, Zhao Y, DenBaars SP, Nakamura S. Semipolar (20-21) single-quantum-well red light-emitting diodes with a low forward voltage Japanese Journal of Applied Physics. 52. DOI: 10.7567/Jjap.52.08Jc08 |
0.728 |
|
| 2013 |
Bryant BN, Young EC, Wu F, Fujito K, Nakamura S, Speck JS. Basal plane stacking fault suppression by nitrogen carrier gas in m-plane GaN regrowth by hydride vapor phase epitaxy Applied Physics Express. 6. DOI: 10.7567/Apex.6.115502 |
0.362 |
|
| 2013 |
Pfaff NA, Kelchner KM, Feezell DF, Nakamura S, DenBaars SP, Speck JS. Thermal performance of violet and blue single-quantum-well nonpolar m-plane InGaN light-emitting diodes Applied Physics Express. 6. DOI: 10.7567/Apex.6.092104 |
0.427 |
|
| 2013 |
Zhao Y, Oh SH, Wu F, Kawaguchi Y, Tanaka S, Fujito K, Speck JS, DenBaars SP, Nakamura S. Green semipolar (202̄1̄) InGaN light-emitting diodes with small wavelength shift and narrow spectral linewidth Applied Physics Express. 6. DOI: 10.7567/Apex.6.062102 |
0.719 |
|
| 2013 |
Kawaguchi Y, Huang SC, Farrell RM, Zhao Y, Speck JS, DenBaars SP, Nakamura S. Dependence of electron overflow on emission wavelength and crystallographic orientation in single-quantum-well iii-nitride light-emitting diodes Applied Physics Express. 6. DOI: 10.7567/Apex.6.052103 |
0.729 |
|
| 2013 |
Holder C, Feezell D, Speck JS, DenBaars SP, Nakamura S. Demonstration of nonpolar GaN-based vertical-cavity surface-emitting lasers Proceedings of Spie - the International Society For Optical Engineering. 8639. DOI: 10.1117/12.2008277 |
0.828 |
|
| 2013 |
Hsu PS, Farrell RM, Weaver JJ, Fujito K, Denbaars SP, Speck JS, Nakamura S. Comparison of polished and dry etched semipolar (1122) III-Nitride laser facets Ieee Photonics Technology Letters. 25: 2105-2107. DOI: 10.1109/Lpt.2013.2281608 |
0.618 |
|
| 2013 |
Feezell DF, Speck JS, Denbaars SP, Nakamura S. Semipolar (2021) InGaN/GaN light-emitting diodes for high-efficiency solid-state lighting Ieee/Osa Journal of Display Technology. 9: 190-198. DOI: 10.1109/Jdt.2012.2227682 |
0.487 |
|
| 2013 |
Armstrong AM, Kelchner K, Nakamura S, Denbaars SP, Speck JS. Influence of growth temperature and temperature ramps on deep level defect incorporation in m-plane GaN Applied Physics Letters. 103. DOI: 10.1063/1.4841575 |
0.448 |
|
| 2013 |
Hardy MT, Wu F, Shan Hsu P, Haeger DA, Nakamura S, Speck JS, Denbaars SP. True green semipolar InGaN-based laser diodes beyond critical thickness limits using limited area epitaxy Journal of Applied Physics. 114. DOI: 10.1063/1.4829699 |
0.459 |
|
| 2013 |
Shan Hsu P, Wu F, Young EC, Romanov AE, Fujito K, Denbaars SP, Speck JS, Nakamura S. Blue and aquamarine stress-relaxed semipolar (11 2 ̄ 2) laser diodes Applied Physics Letters. 103. DOI: 10.1063/1.4826087 |
0.406 |
|
| 2013 |
Marcinkevičius S, Zhao Y, Kelchner KM, Nakamura S, Denbaars SP, Speck JS. Near-field investigation of spatial variations of (202̄1̄) InGaN quantum well emission spectra Applied Physics Letters. 103. DOI: 10.1063/1.4823589 |
0.689 |
|
| 2013 |
Hardy MT, Holder CO, Feezell DF, Nakamura S, Speck JS, Cohen DA, Denbaars SP. Indium-tin-oxide clad blue and true green semipolar InGaN/GaN laser diodes Applied Physics Letters. 103. DOI: 10.1063/1.4819171 |
0.808 |
|
| 2013 |
Denault KA, Cantore M, Nakamura S, Denbaars SP, Seshadri R. Efficient and stable laser-driven white lighting Aip Advances. 3. DOI: 10.1063/1.4813837 |
0.401 |
|
| 2013 |
Pesach A, Gross E, Huang C-, Lin Y-, Vardi A, Schacham SE, Nakamura S, Bahir G. Non-polar m-plane intersubband based InGaN/(Al)GaN quantum well infrared photodetectors Applied Physics Letters. 103: 22110. DOI: 10.1063/1.4813395 |
0.425 |
|
| 2013 |
Sztein A, Haberstroh J, Bowers JE, Denbaars SP, Nakamura S. Calculated thermoelectric properties of InxGa1-xN, InxAl1-xN, and AlxGa1-xN Journal of Applied Physics. 113. DOI: 10.1063/1.4804174 |
0.779 |
|
| 2013 |
Zhao Y, Wu F, Huang CY, Kawaguchi Y, Tanaka S, Fujito K, Speck JS, Denbaars SP, Nakamura S. Suppressing void defects in long wavelength semipolar (2021) InGaN quantum wells by growth rate optimization Applied Physics Letters. 102. DOI: 10.1063/1.4794864 |
0.677 |
|
| 2013 |
Farrell RM, Haeger DA, Fujito K, Denbaars SP, Nakamura S, Speck JS. Morphological evolution of InGaN/GaN light-emitting diodes grown on free-standing m-plane GaN substrates Journal of Applied Physics. 113. DOI: 10.1063/1.4790636 |
0.452 |
|
| 2013 |
Kelchner KM, Kuritzky LY, Fujito K, Nakamura S, Denbaars SP, Speck JS. Emission characteristics of single InGaN quantum wells on misoriented nonpolar m-plane bulk GaN substrates Journal of Crystal Growth. 382: 80-86. DOI: 10.1016/J.Jcrysgro.2013.08.013 |
0.465 |
|
| 2013 |
Bryant BN, Hirai A, Young EC, Nakamura S, Speck JS. Quasi-equilibrium crystal shapes and kinetic Wulff plots for gallium nitride grown by hydride vapor phase epitaxy Journal of Crystal Growth. 369: 14-20. DOI: 10.1016/J.Jcrysgro.2013.01.031 |
0.358 |
|
| 2013 |
Pimputkar S, Kawabata S, Speck JS, Nakamura S. Surface morphology study of basic ammonothermal GaN grown on non-polar GaN seed crystals of varying surface orientations from m-plane to a-plane Journal of Crystal Growth. 368: 67-71. DOI: 10.1016/J.Jcrysgro.2013.01.022 |
0.756 |
|
| 2013 |
Denbaars SP, Feezell D, Kelchner K, Pimputkar S, Pan CC, Yen CC, Tanaka S, Zhao Y, Pfaff N, Farrell R, Iza M, Keller S, Mishra U, Speck JS, Nakamura S. Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays Acta Materialia. 61: 945-951. DOI: 10.1016/J.Actamat.2012.10.042 |
0.816 |
|
| 2012 |
Reading AH, Richardson JJ, Pan CC, Nakamura S, DenBaars SP. High efficiency white LEDs with single-crystal ZnO current spreading layers deposited by aqueous solution epitaxy. Optics Express. 20: A13-9. PMID 22379670 DOI: 10.1364/Oe.20.000A13 |
0.407 |
|
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