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Mihir Tungare, Ph.D. - Publications

Affiliations: 
2012 Nanoscale Science and Engineering-Nanoscale Engineering State University of New York, Albany, Albany, NY, United States 
Area:
Nanotechnology, Materials Science Engineering, Molecular Physics
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18 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2013 Shahedipour-Sandvik F, Leathersich J, Tompkins RP, Suvarna P, Tungare M, Walsh TA, Kirchner KW, Zhou S, Jones KA. Enhanced performance of an AlGaN/GaN high electron mobility transistor on Si by means of improved adatom diffusion length during MOCVD epitaxy Semiconductor Science and Technology. 28. DOI: 10.1088/0268-1242/28/7/074002  0.805
2013 Tungare M, Weng X, Leathersich JM, Suvarna P, Redwing JM, Shahedipour-Sandvik F. Modification of dislocation behavior in GaN overgrown on engineered AlN film-on-bulk Si substrate Journal of Applied Physics. 113. DOI: 10.1063/1.4798598  0.793
2013 Leathersich J, Suvarna P, Tungare M, Shahedipour-Sandvik F. Homoepitaxial growth of non-polar AlN crystals using molecular dynamics simulations Surface Science. 617: 36-41. DOI: 10.1016/J.Susc.2013.07.017  0.764
2013 Tompkins RP, Walsh TA, Derenge MA, Kirchner KW, Zhou S, Nguyen CB, Jones KA, Mulholland G, Metzger R, Leach JH, Suvarna P, Tungare M, Shahedipour-Sandvik F. HVPE GaN for high power electronic Schottky diodes Solid-State Electronics. 79: 238-243. DOI: 10.1016/J.Sse.2012.07.003  0.77
2013 Suvarna P, Tungare M, Leathersich JM, Agnihotri P, Shahedipour-Sandvik F, Douglas Bell L, Nikzad S. Design and growth of visible-blind and solar-blind III-N APDs on sapphire substrates Journal of Electronic Materials. 42: 854-858. DOI: 10.1007/S11664-013-2537-8  0.78
2013 Leathersich JM, Tungare M, Weng X, Suvarna P, Agnihotri P, Evans M, Redwing J, Shahedipour-Sandvik F. Ion-implantation-induced damage characteristics within AlN and si for GaN-on-Si epitaxy Journal of Electronic Materials. 42: 833-837. DOI: 10.1007/S11664-013-2491-5  0.78
2012 Tungare M, Leathersich JM, Tripathi N, Suvarna P, Shahedipour-Sandvik F, Walsh TA, Tompkins RP, Jones KA. Crack-free III-nitride structures (> 3.5 μm) on silicon Materials Research Society Symposium Proceedings. 1324: 9-15. DOI: 10.1557/Opl.2011.961  0.728
2012 Gagnon JC, Tungare M, Weng X, Leathersich JM, Shahedipour-Sandvik F, Redwing JM. In situ stress measurements during GaN growth on ion-implanted AlN/Si substrates Journal of Electronic Materials. 41: 865-872. DOI: 10.1007/S11664-011-1852-1  0.695
2011 Tompkins RP, Walsh TA, Derenge MA, Kirchner KW, Zhou S, Nguyen CB, Jones KA, Suvarna P, Tungare M, Tripathi N, Shahedipour-Sandvik F. The effect of carbon impurities on lightly doped MOCVD GaN Schottky diodes Journal of Materials Research. 26: 2895-2900. DOI: 10.1557/Jmr.2011.360  0.756
2011 Shahedipour-Sandvik FS, Tungare M, Leathersich J, Suvarna P, Tompkins R, Jones KA. III-Nitride devices on Si: Challenges and opportunities 2011 International Semiconductor Device Research Symposium, Isdrs 2011. DOI: 10.1109/ISDRS.2011.6135260  0.629
2011 Tungare M, Kamineni VK, Shahedipour-Sandvik F, Diebold AC. Dielectric properties and thickness metrology of strain engineered GaN/AlN/Si (111) thin films grown by MOCVD Thin Solid Films. 519: 2929-2932. DOI: 10.1016/J.Tsf.2010.12.079  0.708
2011 Tripathi N, Bell LD, Nikzad S, Tungare M, Suvarna PH, Sandvik FS. Novel Cs-free GaN photocathodes Journal of Electronic Materials. 40: 382-387. DOI: 10.1007/S11664-010-1507-7  0.792
2011 Tungare M, Shi Y, Tripathi N, Suvarna P, Shahedipour-Sandvik F. A Tersoff-based interatomic potential for wurtzite AlN Physica Status Solidi (a) Applications and Materials Science. 208: 1569-1572. DOI: 10.1002/Pssa.201001086  0.741
2009 Reshchikov MA, Shahedipour-Sandvik F, Messer BJ, Jindal V, Tripathi N, Tungare M. Defect-related photoluminescence in Mg-doped GaN nanostructures Physica B: Condensed Matter. 404: 4903-4906. DOI: 10.1016/J.Physb.2009.08.232  0.774
2008 Jindal V, Grandusky J, Tripathi N, Tungare M, Shahedipour-Sandvik F. Effect of interfacial strain on shape and composition of MOCVD grown III-Nitride nanostructures Mrs Proceedings. 1087. DOI: 10.1557/Proc-1087-V07-02  0.76
2008 Jindal V, Grandusky J, Tripathi N, Tungare M, Shahedipour-Sandvik F. Density functional calculations of the binding energies and adatom diffusion on strained AlN (0001) and GaN (0001) surfaces Materials Research Society Symposium Proceedings. 1040: 158-164. DOI: 10.1557/Proc-1040-Q06-02  0.75
2008 Jindal V, Grandusky J, Tripathi N, Tungare M, Shahedipour-Sandvik F, Sandvik P, Tilak V. Development of homoepitaxially grown GaN thin film layers on freestanding bulk m-plane substrates by metalorganic chemical vapor deposition (MOCVD) Materials Research Society Symposium Proceedings. 1040: 171-177. DOI: 10.1557/Proc-1040-Q01-08  0.785
2008 Jindal V, Tripathi N, Tungare M, Paschos O, Haldar P, Shahedipour-Sandvik F. Selective area heteroepitaxy of low dimensional a-plane and c-plane InGaN nanostructures using pulsed MOCVD Physica Status Solidi (C) Current Topics in Solid State Physics. 5: 1709-1711. DOI: 10.1002/Pssc.200778599  0.767
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