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Liwang Ye, Ph.D. - Publications

Affiliations: 
2014 Physics, Applied University of Maryland, Baltimore County, Baltimore, MD, United States 
Area:
Atomic Physics, Nanoscience, Materials Science Engineering
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6 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2017 Ye L, Kropp JA, Gougousi T. In situ infrared spectroscopy study of the surface reactions during the atomic layer deposition of TiO2 on GaAs (100) surfaces Applied Surface Science. 422: 666-674. DOI: 10.1016/J.Apsusc.2017.05.264  0.663
2016 Ye L, Gougousi T. Diffusion and interface evolution during the atomic layer deposition of TiO2 on GaAs(100) and InAs(100) surfaces Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 34. DOI: 10.1116/1.4931568  0.688
2014 Ye L, Gougousi T. In situ infrared spectroscopy study of the interface self-cleaning during the atomic layer deposition of HfO2on GaAs(100) surfaces Applied Physics Letters. 105. DOI: 10.1063/1.4896501  0.67
2014 Lv Y, Xu Z, Ye L, Su G, Zhuang X. Large single crystal growth and characterization of CuX (X=Cl, Br) by temperature reduction method Journal of Crystal Growth. 402: 337-341. DOI: 10.1016/J.Jcrysgro.2014.05.029  0.301
2013 Ye L, Gougousi T. Indium diffusion and native oxide removal during the atomic layer deposition (ALD) of TiO2 films on InAs(100) surfaces. Acs Applied Materials & Interfaces. 5: 8081-7. PMID 23895423 DOI: 10.1021/Am402161F  0.675
2012 Gougousi T, Ye L. Interface between atomic layer deposition Ta 2O 5 films and GaAs(100) surfaces Journal of Physical Chemistry C. 116: 8924-8931. DOI: 10.1021/Jp2101336  0.683
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