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Steven P. Consiglio, Ph.D. - Publications

Affiliations: 
2007 State University of New York, Albany, Albany, NY, United States 
Area:
Materials Science Engineering, General Physics
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34 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2022 Chae K, Lombardo SF, Tasneem N, Tian M, Kumarasubramanian H, Hur J, Chern W, Yu S, Richter C, Lomenzo PD, Hoffmann M, Schroeder U, Triyoso D, Consiglio S, Tapily K, et al. Local Epitaxial Templating Effects in Ferroelectric and Antiferroelectric ZrO. Acs Applied Materials & Interfaces. PMID 35929399 DOI: 10.1021/acsami.2c03151  0.395
2019 Mukundan V, Beckmann K, Tapily K, Consiglio S, Clark R, Leusink G, Cady N, Diebold AC. Structural Correlation of Ferroelectric Behavior in Mixed Hafnia-Zirconia High-k Dielectrics for FeRAM and NCFET Applications Mrs Advances. 4: 545-551. DOI: 10.1557/Adv.2019.148  0.465
2019 Rogers J, Choi H, Gassner S, Nolting W, Pennock D, Consiglio S, LaBella VP. Visualizing metal/HfO2/SiO2/Si(001) interface electrostatic barrier heights with ballistic hole emission microscopy Journal of Applied Physics. 126: 195302. DOI: 10.1063/1.5119867  0.363
2018 Bhuyian MN, Shao P, Sengupta A, Ding Y, Misra D, Tapily K, Clark RD, Consiglio S, Wajda CS, Leusink GJ. Post Plasma Oxidation Processed ALD Al2O3/Hf1-xZrxO2 Thin Films on Ge Substrates: Reliability Ecs Journal of Solid State Science and Technology. 7. DOI: 10.1149/2.0461712Jss  0.626
2018 Clark R, Tapily K, Yu K-, Hakamata T, Consiglio S, O’Meara D, Wajda C, Smith J, Leusink G. Perspective: New process technologies required for future devices and scaling Apl Materials. 6: 58203. DOI: 10.1063/1.5026805  0.3
2017 Dey S, Yu K, Consiglio S, Tapily K, Hakamata T, Wajda CS, Leusink GJ, Jordan-Sweet J, Lavoie C, Muir D, Moreno B, Diebold AC. Atomic layer deposited ultrathin metal nitride barrier layers for ruthenium interconnect applications Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 35: 03E109. DOI: 10.1116/1.4979709  0.503
2016 Dey S, Tapily K, Consiglio S, Yu K, Clark RD, Wajda CS, Leusink GJ, Woll AR, Diebold AC. Higher-k Tetragonal Phase Stabilization in Atomic Layer Deposited Hf1-xZrxO2 (0Mrs Advances. 1: 269-274. DOI: 10.1557/Adv.2016.65  0.649
2016 Consiglio S, Dey S, Yu K, Tapily K, Clark RD, Hasegawa T, Wajda CS, Leusink GJ, Diebold AC. In Situ Ramp Anneal X-ray Diffraction Study of Atomic Layer Deposited Ultrathin TaN and Ta1-xAlxNyFilms for Cu Diffusion Barrier Applications Ecs Journal of Solid State Science and Technology. 5: P509-P513. DOI: 10.1149/2.0201609Jss  0.375
2016 Raley A, Thibaut S, Mohanty N, Subhadeep K, Nakamura S, Ko A, O'Meara D, Tapily K, Consiglio S, Biolsi P. Self-aligned quadruple patterning integration using spacer on spacer pitch splitting at the resist level for sub-32nm pitch applications Proceedings of Spie - the International Society For Optical Engineering. 9782. DOI: 10.1117/12.2219321  0.37
2016 Ding YM, Misra D, Bhuyian MN, Tapily K, Clark RD, Consiglio S, Wajda CS, Leusink GJ. Electrical characterization of dry and wet processed interface layer in Ge/High-K devices Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. 34. DOI: 10.1116/1.4943559  0.484
2016 Bhuyian MNU, Misra D, Tapily K, Clark RD, Consiglio S, Wajda CS, Leusink GJ. Interface state density engineering in Hf1-xZrxO2/SiON/Si gate stack Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. 34. DOI: 10.1116/1.4937916  0.508
2016 Consiglio S, Clark RD, O'Meara D, Wajda CS, Tapily K, Leusink GJ. Comparison of B2O3 and BN deposited by atomic layer deposition for forming ultrashallow dopant regions by solid state diffusion Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 34. DOI: 10.1116/1.4928705  0.655
2016 Dey S, Tapily K, Consiglio S, Clark RD, Wajda CS, Leusink GJ, Woll AR, Diebold AC. Role of Ge and Si substrates in higher-k tetragonal phase formation and interfacial properties in cyclical atomic layer deposition-anneal Hf1−xZrxO2/Al2O3 thin film stacks Journal of Applied Physics. 120: 125304. DOI: 10.1063/1.4963166  0.599
2015 Bhuyian MNU, Poddar S, Misra D, Tapily K, Clark RD, Consiglio S, Wajda CS, Nakamura G, Leusink GJ. Impact of cyclic plasma treatment on oxygen vacancy defects in TiN/HfZrO/SiON/Si gate stacks Applied Physics Letters. 106. DOI: 10.1063/1.4921307  0.413
2014 Bhuyian MN, Misra D, Tapily K, Clark RD, Consiglio S, Wajda CS, Nakamura G, Leusink GJ. Cyclic Plasma Treatment during ALD Hf1-xZrxO2 Deposition Ecs Journal of Solid State Science and Technology. 3. DOI: 10.1149/2.020405Jss  0.387
2014 Tapily K, Consiglio S, Clark RD, Vasić R, Wajda CS, Jordan-Sweet J, Leusink GJ, Diebold AC. Electrical Enhancement and Higher-K Engineering in Ultra-Thin Atomic Layer Deposited Hf1-xAlxOyFilms Ecs Journal of Solid State Science and Technology. 4: N1-N5. DOI: 10.1149/2.0051502Jss  0.497
2014 Consiglio S, Tapily K, Clark RD, Hasegawa T, Amano F, Leusink GJ, Jordan-Sweet J, Vasić R, Medikonda M, Diebold AC. Engineering crystallinity of atomic layer deposited gate stacks containing ultrathin HfO2and a Ti-based metal gate: Effects of postmetal gate anneal and integration schemes Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 32. DOI: 10.1116/1.4869162  0.578
2013 Consiglio S, Tapily K, Clark RD, Nakamura G, Wajda CS, Leusink GJ. HfxZr1−xO2 compositional control using co-injection atomic layer deposition Journal of Vacuum Science and Technology. 31. DOI: 10.1116/1.4764473  0.574
2013 Vasić R, Consiglio S, Clark RD, Tapily K, Sallis S, Chen B, Newby D, Medikonda M, Raja Muthinti G, Bersch E, Jordan-Sweet J, Lavoie C, Leusink GJ, Diebold AC. Multi-technique x-ray and optical characterization of crystalline phase, texture, and electronic structure of atomic layer deposited Hf 1-xZrxO2 gate dielectrics deposited by a cyclical deposition and annealing scheme Journal of Applied Physics. 113. DOI: 10.1063/1.4811446  0.499
2012 Consiglio S, Clark RD, Bersch E, Larose JD, Wells I, Tapily K, Leusink GJ, Diebold AC. Crystallinity of electrically scaled atomic layer deposited HfO 2 from a cyclical deposition and annealing scheme Journal of the Electrochemical Society. 159. DOI: 10.1149/2.101206Jes  0.693
2012 Consiglio S, Clark RD, Nakamura G, Wajda CS, Leusink GJ. Evaluation of high thermal stability cyclopentadienyl Hf precursors with H2O as a co-reactant for advanced gate logic applications Journal of Vacuum Science and Technology. 30. DOI: 10.1116/1.3664106  0.605
2011 Di M, Bersch E, Diebold AC, Consiglio S, Clark RD, Leusink GJ, Kaack T. Comparison of methods to determine bandgaps of ultrathin HfO2 films using spectroscopic ellipsometry Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 29. DOI: 10.1116/1.3597838  0.588
2011 Kamineni VK, Hilfiker JN, Freeouf JL, Consiglio S, Clark R, Leusink GJ, Diebold AC. Extension of Far UV spectroscopic ellipsometry studies of High-κ dielectric films to 130 nm Thin Solid Films. 519: 2894-2898. DOI: 10.1016/J.Tsf.2010.12.080  0.682
2011 Di M, Bersch E, Clark R, Consiglio S, Leusink G, Diebold AC. Spectroscopic ellipsometry characterization of high-k gate stacks with Vt shift layers Thin Solid Films. 519: 2889-2893. DOI: 10.1016/J.Tsf.2010.12.060  0.36
2010 Di M, Bersch E, Clark RD, Consiglio S, Leusink GJ, Diebold AC. Systematic study of the effect of La2 O3 incorporation on the flatband voltage and Si band bending in the TiN/ HfO 2 / SiO2 /p-Si stack Journal of Applied Physics. 108. DOI: 10.1063/1.3516483  0.406
2010 Bersch E, Di M, Consiglio S, Clark RD, Leusink GJ, Diebold AC. Complete band offset characterization of the HfO2/SiO 2/Si stack using charge corrected x-ray photoelectron spectroscopy Journal of Applied Physics. 107. DOI: 10.1063/1.3284961  0.414
2008 Consiglio S, Zeng W, Berliner N, Eisenbraun ET. Plasma-assisted atomic layer deposition of conductive hafnium nitride using tetrakis(ethylmethylamino)hafnium for CMOS gate electrode applications Journal of the Electrochemical Society. 155. DOI: 10.1149/1.2827995  0.767
2007 Papadatos F, Consiglio S, Skordas S, Eisenbraun ET, Kaloyeros AE. A study of ruthenium ultrathin film nucleation on pretreated SiO2 and Hf-silicate dielectric surfaces Journal of Materials Research. 22: 2254-2264. DOI: 10.1557/Jmr.2007.0280  0.787
2006 Consiglio S, Papadatos F, Naczas S, Skordas S, Eisenbraun ET, Kaloyeros AE. Metallorganic chemical vapor deposition of hafnium silicate thin films using a dual source dimethyl-alkylamido approach Journal of the Electrochemical Society. 153. DOI: 10.1149/1.2338634  0.817
2005 Skordas S, Papadatos F, Consiglio S, Eisenbraun ET, Kaloyeros AE, Gusev EP. Electrical properties of ultrathin Al2O3 films grown by metalorganic chemical vapor deposition for advanced complementary metal-oxide semiconductor gate dielectric applications Journal of Materials Research. 20: 1536-1543. DOI: 10.1557/Jmr.2005.0196  0.808
2004 Papadatos F, Consiglio S, Skordas S, Eisenbraun ET, Kaloyeros AE, Peck J, Thompson D, Hoover C. Chemical vapor deposition of ruthenium and ruthenium oxide thin films for advanced complementary metal-oxide semiconductor gate electrode applications Journal of Materials Research. 19: 2947-2955. DOI: 10.1557/Jmr.2004.0372  0.789
2002 Skordas S, Papadatos F, Consiglio S, Eisenbraun E, Kaloyeros A. Interface Quality and Electrical Performance of Low-Temperature Metal Organic Chemical Vapor Deposition Aluminum Oxide Thin Films for Advanced CMOS Gate Dielectric Applications Mrs Proceedings. 745. DOI: 10.1557/Proc-745-N5.18  0.776
2002 Papadatos F, Skordas S, Consiglio S, Kaloyeros AE, Eisenbraun E. Characterization of ruthenium and ruthenium oxide thin films deposited by chemical vapor deposition for CMOS gate electrode applications Materials Research Society Symposium - Proceedings. 745: 61-66. DOI: 10.1557/Proc-745-N3.3  0.812
2002 Papadatos F, Skordas S, Patel Z, Consiglio S, Eisenbraun E. Chemical vapor deposition of Ru and RuO2 for gate electrode applications Materials Research Society Symposium - Proceedings. 716: 79-84. DOI: 10.1557/Proc-716-B2.4  0.812
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