| Year |
Citation |
Score |
| 2017 |
Heinselman KN, Brown RJ, Shealy JR. Hot-wall low pressure chemical vapor deposition growth and characterization of AlN thin films Journal of Crystal Growth. 475: 286-290. DOI: 10.1016/J.Jcrysgro.2017.07.003 |
0.317 |
|
| 2012 |
Harvard E, Shealy JR. 440 v AlSiN-passivated AlGaN/GaN high electron mobility transistor with 40 GHz bandwidth Device Research Conference - Conference Digest, Drc. 75-76. DOI: 10.1109/DRC.2012.6256933 |
0.345 |
|
| 2011 |
Harvard E, Brown R, Shealy JR. Performance of AlGaN/GaN high-electron mobility transistors with AlSiN passivation Ieee Transactions On Electron Devices. 58: 87-94. DOI: 10.1109/Ted.2010.2084370 |
0.45 |
|
| 2009 |
Brannick A, Zakhleniuk NA, Ridley BK, Shealy JR, Schaff WJ, Eastman LF. Influence of field plate on the transient operation of the AlGaN/GaN HEMT Ieee Electron Device Letters. 30: 436-438. DOI: 10.1109/Led.2009.2016680 |
0.551 |
|
| 2009 |
Brown RJ, Harvard E, Shealy JR. AlxSiyNz passivated AlGaN/GaN high electron mobility transistors Device Research Conference - Conference Digest, Drc. 153-154. DOI: 10.1109/DRC.2009.5354962 |
0.316 |
|
| 2009 |
Brannick A, Zakhleniuk NA, Ridley BK, Eastman LF, Shealy JR, Schaff WJ. Hydrodynamic simulation of surface traps in the AlGaN/GaN HEMT Microelectronics Journal. 40: 410-412. DOI: 10.1016/J.Mejo.2008.06.002 |
0.535 |
|
| 2008 |
Shealy JR, Wang J, Brown R. Methodology for small-signal model extraction of AlGaN HEMTs Ieee Transactions On Electron Devices. 55: 1603-1613. DOI: 10.1109/Ted.2008.925335 |
0.388 |
|
| 2008 |
Shealy JR, Brown RJ. Frequency dispersion in capacitance-voltage characteristics of AlGaNGaN heterostructures Applied Physics Letters. 92. DOI: 10.1063/1.2835708 |
0.398 |
|
| 2007 |
Brannick A, Zakhleniuk N, Ridley BK, Eastman LF, Schaff WJ, Shealy JR. Advanced modelling of GaN/AlGaN HEMT devices with field plate Physica Status Solidi (C) Current Topics in Solid State Physics. 4: 651-654. DOI: 10.1002/Pssc.200673349 |
0.559 |
|
| 2007 |
Brannick A, Zakhleniuk NA, Ridley BK, Eastman LF, Shealy JR, Schaff WJ. Modelling of hot electron effects in GaN/AlGaN HEMT with AlN interlayer 2007 International Conference On Simulation of Semiconductor Processes and Devices, Sispad 2007. 281-284. |
0.473 |
|
| 2005 |
Matulionis A, Liberis J, Eastman LF, Schaff WJ, Shealy JR, Chen X, Sun YJ. Electron transport and microwave noise in MBE- and MOCVD-grown AlGaN/AlN/GaN Acta Physica Polonica A. 107: 361-364. DOI: 10.12693/Aphyspola.107.361 |
0.57 |
|
| 2005 |
Danylyuk SV, Vitusevich SA, Kaper V, Tilak V, Klein N, Eastman LF, Shealy JR. Phase noise study of AlGaN/GaN HEMT X-band oscillator Physica Status Solidi C: Conferences. 2: 2615-2618. DOI: 10.1002/Pssc.200461457 |
0.702 |
|
| 2005 |
Ardaravi?ius L, Ramonas M, Kiprijanovic O, Liberis J, Matulionis A, Eastman LF, Shealy JR, Chen X, Sun YJ. Comparative analysis of hot-electron transport in AlGaN/GaN and AlGaN/AlN/GaN 2DEG channels Physica Status Solidi (a) Applications and Materials Science. 202: 808-811. DOI: 10.1002/Pssa.200461618 |
0.553 |
|
| 2004 |
Thompson R, Prunty T, Kaper V, Shealy JR. Performance of the AlGaN HEMT structure with a gate extension Ieee Transactions On Electron Devices. 51: 292-295. DOI: 10.1109/Ted.2003.822036 |
0.474 |
|
| 2004 |
Matulionis A, Liberis J, Ardaravi?ius L, Eastman LF, Shealy JR, Vertiatchikh A. Hot-phonon lifetime in AlGaN/GaN at a high lattice temperature Semiconductor Science and Technology. 19: S421-S423. DOI: 10.1088/0268-1242/19/4/138 |
0.756 |
|
| 2004 |
Cha HY, Choi YC, Thompson RM, Kaper V, Shealy JR, Eastman LF, Spencer MG. Influence of Si 3N 4 passivation on surface trapping in SiC metal-semiconductor field-effect transistors Journal of Electronic Materials. 33: 908-911. DOI: 10.1007/S11664-004-0219-2 |
0.657 |
|
| 2004 |
Ardaravi?ius L, Liberis J, Matulionis A, Eastman LF, Shealy JR, Vertiatchikh A. Self-heating and microwave noise in AlGaN/GaN Physica Status Solidi C: Conferences. 1: 203-206. DOI: 10.1002/Pssa.200303901 |
0.75 |
|
| 2004 |
Ardaravi?ius L, Liberis J, Matulionis A, Eastman LF, Shealy JR, Vertiatchikh A. Self-heating and microwave noise in AlGaN/GaN Physica Status Solidi C: Conferences. 1: 203-206. |
0.7 |
|
| 2003 |
Green BM, Tilak V, Kaper VS, Smart JA, Shealy JR, Eastman LF. Microwave power limits of AlGaN/GaN HEMTs under pulsed-bias conditions Ieee Transactions On Microwave Theory and Techniques. 51: 618-623. DOI: 10.1109/Tmtt.2002.807680 |
0.793 |
|
| 2003 |
Nuttinck S, Gebara E, Laskar J, Shealy J, Harris M. Improved RF modeling techniques for enhanced AlGaN/GaN HFETs Ieee Microwave and Wireless Components Letters. 13: 140-142. DOI: 10.1109/Lmwc.2003.811062 |
0.336 |
|
| 2003 |
Kim H, Thompson RM, Tilak V, Prunty TR, Shealy JR, Eastman LF. Effects of SiN passivation and high-electric field on AlGaN-GaN HFET degradation Ieee Electron Device Letters. 24: 421-423. DOI: 10.1109/Led.2003.813375 |
0.742 |
|
| 2003 |
Kaper VS, Tilak V, Kim H, Vertiatchikh AV, Thompson RM, Prunty TR, Eastman LF, Shealy JR. High-Power Monolithic AlGaN/GaN HEMT Oscillator Ieee Journal of Solid-State Circuits. 38: 1457-1461. DOI: 10.1109/Jssc.2003.815934 |
0.812 |
|
| 2003 |
Matulionis A, Liberis J, Matulionienė I, Ramonas M, Eastman LF, Shealy JR, Tilak V, Vertiatchikh A. Hot-phonon temperature and lifetime in a biased Al x Ga 1 − x N / G a N channel estimated from noise analysis Physical Review B. 68: 35338. DOI: 10.1103/Physrevb.68.035338 |
0.8 |
|
| 2003 |
Ardaravičius L, Matulionis A, Liberis J, Kiprijanovic O, Ramonas M, Eastman LF, Shealy JR, Vertiatchikh A. Electron drift velocity in AlGaN/GaN channel at high electric fields Applied Physics Letters. 83: 4038-4040. DOI: 10.1063/1.1626258 |
0.762 |
|
| 2003 |
Kim H, Vertiatchikh A, Thompson RM, Tilak V, Prunty TR, Shealy JR, Eastman LF. Hot electron induced degradation of undoped AlGaN/GaN HFETs Microelectronics Reliability. 43: 823-827. DOI: 10.1016/S0026-2714(03)00066-0 |
0.802 |
|
| 2003 |
Shealy JR, Prunty TR, Chumbes EM, Ridley BK. Growth and passivation of AlGaN/GaN heterostructures Journal of Crystal Growth. 250: 7-13. DOI: 10.1016/S0022-0248(02)02187-5 |
0.805 |
|
| 2003 |
Thompson R, Kaper V, Prunty T, Shealy JR. Improved fabrication process for obtaining high power density AlGaN/GaN HEMTs Technical Digest - Gaas Ic Symposium (Gallium Arsenide Integrated Circuit). 298-300. |
0.354 |
|
| 2003 |
Tilak V, Kaper V, Thompson R, Prunty T, Kim H, Smart J, Shealy JR, Eastman L. Correlation of pulsed IV measurements and high power performance of AlGaN/GaN HEMTs Institute of Physics Conference Series. 174: 287-290. |
0.587 |
|
| 2003 |
Matulionis A, Liberis J, Matulioniene I, Ramonas M, Eastman LF, Shealy JR, Tilak V, Vertiatchikh A. Hot-phonon temperature and lifetime in a biased AlxGa 1-xN/GaN channel estimated from noise analysis Physical Review B - Condensed Matter and Materials Physics. 68: 353381-353387. |
0.766 |
|
| 2002 |
Kim H, Vertiatchikh A, Tilak V, Thompson RM, Prunty T, Shealy JR, Eastman LF. Hot electron effects on undoped AlGaN/GaN high electron mobility transistors Gaas Reliability Workshop, Proceedings. 2002: 5-6. DOI: 10.1109/GAAS.2002.1167856 |
0.8 |
|
| 2002 |
Kaper V, Tilak V, Green B, Thompson R, Prunty T, Eastman LF, Shealy JR. Time-domain characterization of nonlinear operation of an AlGaN/GaN HEMT 61st Arftg Conference Digest Spring 2003: Measurement Accuracy, Arftg Spring 2003. 97-102. DOI: 10.1109/ARFTGS.2003.1216872 |
0.692 |
|
| 2002 |
Shealy JR, Kaper V, Tilak V, Prunty T, Smart JA, Green B, Eastman LF. An AlGaN/GaN high-electron-mobility transistor with an AlN sub-buffer layer Journal of Physics Condensed Matter. 14: 3499-3509. DOI: 10.1088/0953-8984/14/13/308 |
0.813 |
|
| 2002 |
Matulionis A, Katilius R, Liberis J, Ardaravičius L, Eastman LF, Shealy JR, Smart J. Hot-electron-temperature relaxation time in a two-dimensional electron gas: AlGaN/GaN at 80 K Journal of Applied Physics. 92: 4490-4497. DOI: 10.1063/1.1510166 |
0.531 |
|
| 2002 |
Eastman LF, Tilak V, Kaper V, Smart J, Thompson R, Green B, Shealy JR, Prunty T. Progress in high-power, high frequency AlGaN/GaN HEMTs Physica Status Solidi (a) Applied Research. 194: 433-438. DOI: 10.1002/1521-396X(200212)194:2<433::Aid-Pssa433>3.0.Co;2-R |
0.784 |
|
| 2002 |
Matulionis A, Liberis J, Ardaravičius L, Ramonas M, Zubkute T, Matulioniene I, Eastman LF, Shealy JR, Smart J, Pavlidis D, Hubbard S. Fast and ultrafast processes in AlGaN/GaN channels Physica Status Solidi (B) Basic Research. 234: 826-829. DOI: 10.1002/1521-3951(200212)234:3<826::Aid-Pssb826>3.0.Co;2-4 |
0.526 |
|
| 2002 |
Green BM, Kaper VS, Tilak V, Shealy JR, Eastman LF. Dynamic loadline analysis of AlGaN/GaN HEMTS Proceedings Ieee Lester Eastman Conference On High Performance Devices. 443-452. |
0.711 |
|
| 2002 |
Kaper V, Tilak V, Green B, Prunty T, Smart J, Eastman LF, Shealy JR. Dependence of Power and Efficiency of AlGaN/GaN HEMT's on the Load Resistance for Class B Bias Proceedings Ieee Lester Eastman Conference On High Performance Devices. 118-125. |
0.725 |
|
| 2002 |
Kaper V, Tilak V, Kim H, Thompson R, Prunty T, Smart J, Eastman LF, Shealy JR. High power monolithic AlGaN/GaN HEMT oscillator Technical Digest - Gaas Ic Symposium (Gallium Arsenide Integrated Circuit). 251-254. |
0.657 |
|
| 2001 |
Kim H, Tilak V, Green BM, Cha HY, Smart JA, Shealy JR, Eastman LF. Degradation characteristics of AlGaN-GaN high electron mobility transistors Ieee International Reliability Physics Symposium Proceedings. 2001: 214-218. DOI: 10.1109/RELPHY.2001.922904 |
0.792 |
|
| 2001 |
Lee JW, Green BM, Tilak V, Lee S, Shealy JR, Eastman LF, Webb KJ. A broadband GaN push-pull distributed microwave power amplifier 2001 International Semiconductor Device Research Symposium, Isdrs 2001 - Proceedings. 391-393. DOI: 10.1109/ISDRS.2001.984526 |
0.751 |
|
| 2001 |
Shealy JB, Smart JA, Shealy JR. Low-phase noise AlGaN/GaN FET-based voltage controlled oscillators (VCOs) Ieee Microwave and Wireless Components Letters. 11: 244-245. DOI: 10.1109/7260.928926 |
0.375 |
|
| 2001 |
Tilak V, Green B, Kaper V, Kim H, Prunty T, Smart J, Shealy J, Eastman L. Influence of barrier thickness on the high-power performance of AlGaN/GaN HEMTs Ieee Electron Device Letters. 22: 504-506. DOI: 10.1109/55.962644 |
0.815 |
|
| 2001 |
Green BM, Tilak V, Lee S, Kim H, Smart JA, Webb KJ, Shealy JR, Eastman LF. High-power broad-band AlGaN/GaN HEMT MMICs on SiC substrates Ieee Transactions On Microwave Theory and Techniques. 49: 2486-2493. DOI: 10.1109/22.971640 |
0.782 |
|
| 2001 |
Eastman LF, Tilak V, Smart J, Green BM, Chumbes EM, Dimitrov R, Kim H, Ambacher OS, Weimann N, Prunty T, Murphy M, Schaff WJ, Shealy JR. Undoped AlGaN/GaN HEMTs for microwave power amplification Ieee Transactions On Electron Devices. 48: 479-485. DOI: 10.1109/16.906439 |
0.816 |
|
| 2001 |
Chumbes EM, Schremer AT, Smart JA, Wang Y, MacDonald NC, Hogue D, Komiak JJ, Lichwalla SJ, Leoni RE, Shealy JR. AlGaN/GaN high electron mobility transistors on Si(111) substrates Ieee Transactions On Electron Devices. 48: 420-426. DOI: 10.1109/16.906430 |
0.826 |
|
| 2001 |
Chumbes EM, Smart JA, Prunty T, Shealy JR. Microwave performance of AlGaN/GaN metal insulator semiconductor field effect transistors on sapphire substrates Ieee Transactions On Electron Devices. 48: 416-419. DOI: 10.1109/16.906429 |
0.823 |
|
| 2001 |
Martínez-Criado G, Cros A, Cantarero A, Ambacher O, Miskys CR, Dimitrov R, Stutzmann M, Smart J, Shealy JR. Residual strain effects on the two-dimensional electron gas concentration of AIGaN/GaN heterostructures Journal of Applied Physics. 90: 4735-4740. DOI: 10.1063/1.1408268 |
0.359 |
|
| 2001 |
Kim H, Tilak V, Green BM, Smart JA, Schaff WJ, Shealy JR, Eastman LF. Reliability Evaluation of High Power AlGaN/GaN HEMTs on SiC Substrate Physica Status Solidi (a) Applied Research. 188: 203-206. DOI: 10.1002/1521-396X(200111)188:1<203::Aid-Pssa203>3.0.Co;2-C |
0.81 |
|
| 2001 |
Green BM, Tilak V, Lee S, Kim H, Smart JA, Webb KJ, Shealy JR, Eastman LF. High-power broadband AlGaN/GaN HEMT MMIC's on SiC substrates Ieee Mtt-S International Microwave Symposium Digest. 2: 1059-1062. |
0.759 |
|
| 2001 |
Kim H, Tilak V, Green BM, Cha H, Smart JA, Shealy JR, Eastman LF. Degradation characteristics of AlGaN/GaN high electron mobility transistors Annual Proceedings - Reliability Physics (Symposium). 214-218. |
0.767 |
|
| 2000 |
Tilak V, Dimitrov R, Murphy M, Green B, Smart J, Schaff WJ, Shealy JR, Eastman LF. Electric and morphology studies of ohmic contacts on AlGaN/GaN Materials Research Society Symposium - Proceedings. 622: T741-T746. DOI: 10.1557/Proc-622-T7.4.1 |
0.782 |
|
| 2000 |
Ambacher O, Link A, Hackenbuchner S, Stutzmann M, Dimitrov R, Murphy M, Smart J, Shealy JR, Green B, Schaff WJ, Eastman LF. 2DEGs and 2DHGs induced by spontaneous and piezoelectric polarization in AlGaN/GaN heterostructures Materials Research Society Symposium - Proceedings. 622: T5101-T5106. DOI: 10.1557/Proc-622-T5.10.1 |
0.709 |
|
| 2000 |
Kaiser S, Jakob M, Zweck J, Gebhardt W, Ambacher O, Dimitrov R, Schremer AT, Smart JA, Shealy JR. Structural properties of AlGaN/GaN heterostructures on Si(111) substrates suitable for high-electron mobility transistors Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 18: 733-740. DOI: 10.1116/1.591268 |
0.427 |
|
| 2000 |
Green BM, Chu KK, Smart JA, Tilak V, Kim H, Shealy JR, Eastman LF. Cascode connected AlGaN/GaN HEMTs on SiC substrates Ieee Microwave and Guided Wave Letters. 10: 316-318. DOI: 10.1109/75.862226 |
0.813 |
|
| 2000 |
Green BM, Chu KK, Chumbes EM, Smart JA, Shealy JR, Eastman LF. Effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMT's Ieee Electron Device Letters. 21: 268-270. DOI: 10.1109/55.843146 |
0.808 |
|
| 2000 |
Dimitrov R, Murphy M, Smart J, Schaff W, Shealy JR, Eastman LF, Ambacher O, Stutzmann M. Two-dimensional electron gases in Ga-face and N-face AlGaN/GaN heterostructures grown by plasma-induced molecular beam epitaxy and metalorganic chemical vapor deposition on sapphire Journal of Applied Physics. 87: 3375-3380. DOI: 10.1063/1.372353 |
0.627 |
|
| 2000 |
Ambacher O, Foutz B, Smart J, Shealy JR, Weimann NG, Chu K, Murphy M, Sierakowski AJ, Schaff WJ, Eastman LF, Dimitrov R, Mitchell A, Stutzmann M. Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures Journal of Applied Physics. 87: 334-344. DOI: 10.1063/1.371866 |
0.74 |
|
| 2000 |
Garrido JA, Foutz BE, Smart JA, Shealy JR, Murphy MJ, Schaff WJ, Eastman LF, Munoz E. Low-frequency noise and mobility fluctuations in AlGaN/GaN heterostructure field-effect transistors Applied Physics Letters. 76: 3442-3444. DOI: 10.1063/1.126672 |
0.636 |
|
| 2000 |
Schremer AT, Smart JA, Wang Y, Ambacher O, MacDonald NC, Shealy JR. High electron mobility AIGaN/GaN heterostructure on (111) Si Applied Physics Letters. 76: 736-738. DOI: 10.1063/1.125878 |
0.455 |
|
| 2000 |
Dimitrov R, Tilak V, Yeo W, Green B, Kim H, Smart J, Chumbes E, Shealy JR, Schaff W, Eastman LF, Miskys C, Ambacher O, Stutzmann M. Influence of oxygen and methane plasma on the electrical properties of undoped AlGaN/GaN heterostructures for high power transistors Solid-State Electronics. 44: 1361-1365. DOI: 10.1016/S0038-1101(00)00085-X |
0.806 |
|
| 2000 |
Koley G, Smart J, Shealy JR, Spencer MG. Characterization of dislocations and suface potential in III-V nitride heterostructures Proceedings of the Ieee Cornell Conference On Advanced Concepts in High Speed Semiconductor Devices and Circuits. 200-206. |
0.508 |
|
| 2000 |
Green BM, Kim H, Tilak V, Shealy JR, Smart JA, Eastman LF. Validation of an analytical large signal model for AlGaN/GaN HEMT's on SiC substrates Proceedings of the Ieee Cornell Conference On Advanced Concepts in High Speed Semiconductor Devices and Circuits. 237-241. |
0.638 |
|
| 2000 |
Prunty TR, Smart JA, Chumbes EM, Ridley BK, Eastman LF, Shealy JR. Passivation of AlGaN/GaN heterostructures with silicon nitride for insulated gate transistors Proceedings of the Ieee Cornell Conference On Advanced Concepts in High Speed Semiconductor Devices and Circuits. 208-214. |
0.813 |
|
| 2000 |
Tilak V, Green B, Kim H, Dimitrov R, Smart J, Schaff WJ, Shealy JR, Eastman LF. Effect of passivation on AlGaN/GaN HEMT device performance Ieee International Symposium On Compound Semiconductors, Proceedings. 357-363. |
0.749 |
|
| 2000 |
Eastman LF, Green B, Smart J, Tilak V, Chumbes E, Kim H, Prunty T, Weimann N, Dimitrov R, Ambacher O, Schaff WJ, Shealy JR. Power limits of polarization-induced AlGaN/GaN HEMT's Proceedings of the Ieee Cornell Conference On Advanced Concepts in High Speed Semiconductor Devices and Circuits. 242-246. |
0.739 |
|
| 2000 |
Green BM, Chu KK, Smart JA, Tilak V, Kim H, Shealy JR, Eastman LF. Cascode connected A1GaN/GaN HEMT's on SiC substrates Ieee Microwave and Wireless Components Letters. 10: 316-318. |
0.656 |
|
| 2000 |
Ambacher O, Foutz B, Smart J, Shealy JR, Weimann NG, Chu K, Murphy M, Sierakowski AJ, Schaff WJ, Eastman LF, Dimitrov R, Mitchell A, Stutzmann M. Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures Journal of Applied Physics. 87: 334-344. |
0.316 |
|
| 1999 |
Foutz BE, Murphy MJ, Ambacher O, Tilak V, Smart JA, Shealy JR, Schaff WJ, Eastman LF. The Influence of Spontaneous and Piezoelectric Polarization on Novel AlGaN/GaN/InGaN Device Structures Mrs Proceedings. 572: 501. DOI: 10.1557/Proc-572-501 |
0.753 |
|
| 1999 |
Murphy MJ, Chu K, Wu H, Yeo W, Schaff WJ, Ambacher O, Smart J, Shealy JR, Eastman LF, Eustis TJ. Molecular beam epitaxial growth of normal and inverted two-dimensional electron gases in AlGaN/GaN based heterostructures Journal of Vacuum Science & Technology B. 17: 1252-1254. DOI: 10.1116/1.590733 |
0.782 |
|
| 1999 |
Ambacher O, Smart J, Shealy JR, Weimann NG, Chu K, Murphy M, Schaff WJ, Eastman LF, Dimitrov R, Wittmer L, Stutzmann M, Rieger W, Hilsenbeck J. Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures Journal of Applied Physics. 85: 3222-3233. DOI: 10.1063/1.369664 |
0.75 |
|
| 1999 |
Smart JA, Chumbes EM, Schremer AT, Shealy JR. Single step process for epitaxial lateral overgrowth of GaN on SiC and sapphire substrates Applied Physics Letters. 75: 3820-3822. DOI: 10.1063/1.125467 |
0.798 |
|
| 1999 |
Smart JA, Schremer AT, Weimann NG, Ambacher O, Eastman LF, Shealy JR. AlGaN/GaN heterostructures on insulating AlGaN nucleation layers Applied Physics Letters. 75: 388-390. DOI: 10.1063/1.124384 |
0.559 |
|
| 1999 |
Ambacher O, Dimitrov R, Stutzmann M, Foutz BE, Murphy MJ, Smart JA, Shealy JR, Weimann NG, Chu K, Chumbes M, Green B, Sierakowski AJ, Schaff WJ, Eastman LF. Role of Spontaneous and Piezoelectric Polarization Induced Effects in Group-III Nitride Based Heterostructures and Devices Physica Status Solidi B-Basic Solid State Physics. 216: 381-389. DOI: 10.1002/(Sici)1521-3951(199911)216:1<381::Aid-Pssb381>3.0.Co;2-O |
0.791 |
|
| 1999 |
Chumbes EM, Schremer AT, Smart JA, Hogue D, Komiak J, Shealy JR. Microwave performance of AlGaN/GaN high electron mobility transistors on Si(111) substrates Technical Digest - International Electron Devices Meeting. 397-400. |
0.823 |
|
| 1999 |
Foutz BE, Murphy MJ, Ambacher O, Tilak V, Smart JA, Shealy JR, Schaff WJ, Eastman LF. The influence of spontaneous and piezoelectric polarization on novel AlGaN/GaN/ingan device structures Materials Research Society Symposium - Proceedings. 572: 501-506. |
0.35 |
|
| 1999 |
Ambacher O, Dimitrov R, Stutzmann M, Foutz BE, Murphy MJ, Smart JA, Shealy JR, Weimann NG, Chu K, Chumbes M, Green B, Sierakowski AJ, Schaff WJ, Eastman LF. Role of spontaneous and piezoelectric polarization induced effects in group-III nitride based heterostructures and devices Physica Status Solidi (B) Basic Research. 216: 381-389. |
0.624 |
|
| 1999 |
Ambacher O, Smart J, Shealy JR, Weimann NG, Chu K, Murphy M, Schaff WJ, Eastman LF, Dimitrov R, Wittmer L, Stutzmann M, Rieger W, Hilsenbeck J. Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- And Ga-face AIGaN/GaN heterostructures Journal of Applied Physics. 85: 3222-3233. |
0.333 |
|
| 1998 |
Lee JW, Schremer AT, Shealy JR, Ballantyne JM. GaInP/GaP quantum dots - A material for OEIC on silicon substrates Proceedings of Spie - the International Society For Optical Engineering. 3290: 20-31. DOI: 10.1117/12.298246 |
0.397 |
|
| 1998 |
Wankerl A, Emerson DT, Cook MJ, Shealy JR. Wavelength dependence of UV laser selective AlxGa1-xAs growth via adlayer stimulation in OMVPE Journal of Crystal Growth. 191: 8-17. DOI: 10.1016/S0022-0248(98)00019-0 |
0.32 |
|
| 1997 |
Shealy JR, Macdonald NC, Xu Y, Whittingham KL, Emerson DT, Pitts BL. Direct band gap structures on nanometer-scale, micromachined silicon tips Applied Physics Letters. 70: 3458-3460. DOI: 10.1063/1.119200 |
0.344 |
|
| 1997 |
Lee JW, Salzman J, Emerson D, Shealy JR, Ballantyne JM. Selective area growth of GaP on Si by MOCVD Journal of Crystal Growth. 172: 53-57. DOI: 10.1016/S0022-0248(96)00738-5 |
0.313 |
|
| 1997 |
Lee JW, Schremer AT, Fekete D, Shealy JR, Ballantyne JM. Growth of direct bandgap GaInP quantum dots on GaP substrates Journal of Electronic Materials. 26: 1199-1204. DOI: 10.1007/S11664-997-0020-0 |
0.342 |
|
| 1996 |
Wankerl A, Emerson DT, Cook MJ, Shealy JR. Structural And Optical Characterization Of Al x Ga 1−x As Grown At Low Temperatures By Organometallic Vapor Phase Epitaxy Mrs Proceedings. 442: 479. DOI: 10.1557/Proc-442-479 |
0.31 |
|
| 1996 |
Lee JS, Salzman J, Emerson D, Shealy JR, Ballantyne JM. Selective growth of GaP on Si by metal organic vapor phase epitaxy Materials Research Society Symposium - Proceedings. 417: 301-305. DOI: 10.1557/Proc-417-301 |
0.34 |
|
| 1996 |
Emerson DT, Smart JA, Whittingham KL, Chumbes EM, Shealy JR. Optical and structural characterization of arsenide/phosphide interfaces formed by flow modulation epitaxy Materials Research Society Symposium - Proceedings. 405: 387-392. DOI: 10.1557/Proc-406-497 |
0.779 |
|
| 1996 |
Matragrano MJ, Ast DG, Watson GP, Shealy JR. Measurement of the mean free path of dislocation glide in the InGaAs/GaAs materials system Journal of Applied Physics. 79: 776-780. DOI: 10.1063/1.360824 |
0.322 |
|
| 1996 |
Emerson DT, Shealy JR. Structural investigation of short period GaInAs/InP superlattices Applied Physics Letters. 69: 383-385. DOI: 10.1063/1.118068 |
0.307 |
|
| 1995 |
Whittingham KL, Emerson DT, Shealy JR, Matragrano MJ, Ast DG. Effect of phosphorus composition on the structural quality of GaInP/GaAsP short-period superlattices Applied Physics Letters. 67: 3741. DOI: 10.1063/1.115368 |
0.315 |
|
| 1995 |
Jones ME, Shealy JR, Engstrom JR. Thermal and plasma-assisted nitridation of GaAs(100) using NH3 Applied Physics Letters. 67: 542. DOI: 10.1063/1.115182 |
0.316 |
|
| 1995 |
Whittingham KL, Emerson DT, Shealy JR, Matragrano MJ, Ast DG. Growth of GaInP/GaAsP short period superlattices by flow modulation organometallic vapor phase epitaxy Journal of Electronic Materials. 24: 1611-1615. DOI: 10.1007/Bf02676819 |
0.359 |
|
| 1994 |
Matragrano MJ, Krishnamoorthy V, Ast DG, Shealy JR. Characterization and elimination of surface defects in Gax In1-xP grown by organometallic vapor phase epitaxy Journal of Crystal Growth. 142: 275-283. DOI: 10.1016/0022-0248(94)90332-8 |
0.369 |
|
| 1992 |
Sinaletery J, Shealy JR. The Use of Ultraviolet Radiation at the Congruent Sublimation Temperature of Indium Phosphide to Produce Enhanced Inp “Schottky” Barriers Journal of the Electrochemical Society. 139: 2961-2968. DOI: 10.1149/1.2069016 |
0.395 |
|
| 1992 |
Bradshaw J, Song XJ, Shealy JR, Zhu JG, Østergaard H. Characterization by Raman scattering, x-ray diffraction, and transmission electron microscopy of (AlAs)m(InAs)m short period superlattices grown by migration enhanced epitaxy Journal of Applied Physics. 72: 308-310. DOI: 10.1063/1.352139 |
0.325 |
|
| 1992 |
Pitts BL, Emerson DT, Shealy JR. Arsine flow requirement for the flow modulation growth of high purity GaAs using adduct-grade triethylgallium Applied Physics Letters. 61: 2054-2056. DOI: 10.1063/1.108330 |
0.332 |
|
| 1991 |
O'Brien S, Shealy JR, Wicks GW. Monolithic integration of an (Al)GaAs laser and an intracavity electroabsorption modulator using selective partial interdiffusion Applied Physics Letters. 58: 1363-1365. DOI: 10.1063/1.104309 |
0.575 |
|
| 1990 |
Behfar-Rad A, Shealy JR, Chinn SR, Wong SS. Effect of Cladding Layer Thickness on the Performance of GaAs-AlGaAs Graded Index Separate Confinement Heterostructure Single Quantum-Well Lasers Ieee Journal of Quantum Electronics. 26: 1476-1480. DOI: 10.1109/3.102624 |
0.325 |
|
| 1990 |
O'Brien S, Shealy JR, Bour DP, Elbaum L, Chi JY. Effects of rapid thermal annealing and SiO2 encapsulation on GaInAs/AlInAs heterostructures Applied Physics Letters. 56: 1365-1367. DOI: 10.1063/1.103204 |
0.332 |
|
| 1990 |
Offsey SD, Tasker PJ, Schaff WJ, Kapitan L, Shealy JR, Eastman LF. Vertical integration of an In/sub 0.15/Ga/sub 0.85/As modulation-doped field effect transistor and GaAs laser grown by molecular beam epitaxy Electronics Letters. 26: 350-352. DOI: 10.1049/El:19900228 |
0.535 |
|
| 1989 |
De Cooman BC, Carter CB, Kam Toi C, Shealy JR. The characterization of misfit dislocations at {100} heterojunctions in III-V compound semiconductors Acta Metallurgica. 37: 2779-2793. DOI: 10.1016/0001-6160(89)90312-X |
0.335 |
|
| 1988 |
Mckernan S, De Cooman BC, Carter CB, Bour DP, Shealy JR. Direct observation of ordering in (galn) p Journal of Materials Research. 3: 406-409. DOI: 10.1557/Jmr.1988.0406 |
0.335 |
|
| 1988 |
Bour DP, Shealy JR. Organometallic Vapor Phase Epitaxial Growth of (AlxGax1_x0.5In0.5P and Its Heterostructures Ieee Journal of Quantum Electronics. 24: 1856-1863. DOI: 10.1109/3.7127 |
0.345 |
|
| 1988 |
Carlson NW, Evans GA, Hammer JM, Lurie M, Carr LA, Hawrylo FZ, James EA, Kaiser CJ, Kirk JB, Reichert WF, Truxal DA, Shealy JR, Chinn SR, Zory PS. High-power seven-element grating surface emitting diode laser array with 0.012° far-field angle Applied Physics Letters. 52: 939-941. DOI: 10.1063/1.99234 |
0.334 |
|
| 1988 |
Evans GA, Carlson NW, Hammer JM, Lurie M, Butler JK, Carr LA, Hawrylo FZ, James EA, Kaiser CJ, Kirk JB, Reichert WF, Chinn SR, Shealy JR, Zory PS. Efficient, high-power (>150 mW) grating surface emitting lasers Applied Physics Letters. 52: 1037-1039. DOI: 10.1063/1.99202 |
0.367 |
|
| 1988 |
Shealy JR. High-efficiency superlattice graded-index separate confining heterostructure lasers with AlGaAs single quantum wells Applied Physics Letters. 52: 1455-1457. DOI: 10.1063/1.99096 |
0.34 |
|
| 1988 |
Bour DP, Shealy JR, McKernan S. Ga0.5In0.5P/GaAs interfaces by organometallic vapor-phase epitaxy Journal of Applied Physics. 63: 1241-1243. DOI: 10.1063/1.339992 |
0.372 |
|
| 1988 |
Evans GA, Carlson NW, Hammer JM, Lurie M, Butler JK, Palfrey SL, Amantea R, Carr LA, Hawrylo FZ, James EA, Kaiser CJ, Kirk JB, Reichert WF, Chinn SR, Shealy JR, et al. Coherent, monolithic two-dimensional (10×10) laser arrays using grating surface emission Applied Physics Letters. 53: 2123-2125. DOI: 10.1063/1.100293 |
0.31 |
|
| 1988 |
Rosenberg A, McShea JC, Bogdan AR, Petheram JC, Rosen A, Bechtle D, Zory PS, Sprague JW, Shealy JR. HIGH-POWER, HIGH-EFFICIENCY 770 nm 2D LASERDIODE ARRAY Electronics Letters. 24: 1121-1122. DOI: 10.1049/El:19880762 |
0.327 |
|
| 1987 |
Grande WJ, Braddock WD, Shealy JR, Tang CL. One-step two-level etching technique for monolithic integrated optics Applied Physics Letters. 51: 2189-2191. DOI: 10.1063/1.98935 |
0.303 |
|
| 1987 |
Bour DP, Shealy JR. High-power (1.4 W) AlGaInP graded-index separate confinement heterostructure visible (λ∼658 nm) laser Applied Physics Letters. 51: 1658-1660. DOI: 10.1063/1.98534 |
0.335 |
|
| 1987 |
Bour DP, Shealy JR, Wicks GW, Schaff WJ. Optical properties of AlxIn1-xP grown by organometallic vapor phase epitaxy Applied Physics Letters. 50: 615-617. DOI: 10.1063/1.98098 |
0.53 |
|
| 1987 |
Shealy JR, Wicks GW. Investigation by Raman scattering of the properties of III-V compound semiconductors at high temperature Applied Physics Letters. 50: 1173-1175. DOI: 10.1063/1.97953 |
0.563 |
|
| 1986 |
Cooman BCD, Conner JR, Summerfelt SR, McKernan S, Carter CB, Shealy JR. Imaging of III-V Compound Superlattices by Hrem and Rem Mrs Proceedings. 77. DOI: 10.1557/Proc-77-187 |
0.307 |
|
| 1986 |
Shealy JR, Schaus CF, Eastman LF. Organometallic vapor phase epitaxial growth of GaInP/GaAs (AlGaAs) heterostructures Applied Physics Letters. 48: 242-244. DOI: 10.1063/1.96569 |
0.519 |
|
| 1986 |
Schaus CF, Shealy JR, Eastman LF, Cooman BC, Carter CB. Improved GaAs/AlGaAs quantum-well heterostructures by organometallic vapor-phase epitaxy Journal of Applied Physics. 59: 678-680. DOI: 10.1063/1.336637 |
0.521 |
|
| 1986 |
Schaus CF, Shealy JR, Najjar FE, Eastman LF. Integrated laser/phototransistor optoelectronic switching device by organometallic vapour phase epitaxy Electronics Letters. 22: 454-456. DOI: 10.1049/El:19860309 |
0.339 |
|
| 1986 |
Schaus CF, Schaff WJ, Shealy JR. OMVPE growth of GaxIn1-xP/GaAs(AlyGa1-yAs) heterostructures for optical and electronic device applications Journal of Crystal Growth. 77: 360-366. DOI: 10.1016/0022-0248(86)90324-6 |
0.387 |
|
| 1985 |
Shealy JR, Schaus CF, Wicks GW. Investigation of the properties of organometallic vapor phase epitaxially grown AlGaAs/GaAs heterostructures using Raman scattering Applied Physics Letters. 47: 125-127. DOI: 10.1063/1.96236 |
0.557 |
|
| 1985 |
Shealy JR, Chinn SR. Simultaneous diffusion of zinc and indium into GaAs: A new approach for the formation of low resistance ohmic contacts to compound semiconductors Applied Physics Letters. 47: 410-412. DOI: 10.1063/1.96128 |
0.322 |
|
| 1985 |
Kuesters KH, de Cooman BC, Shealy JR, Carter CB. TEM observations of compositional variations in AlxGa1-xAs grown by OMVPE Journal of Crystal Growth. 71: 514-518. DOI: 10.1016/0022-0248(85)90357-4 |
0.329 |
|
| 1985 |
Schaus CF, Shealy JR, Eastman LF. Optimized growth of GRIN-SCH quantum well lasers by low pressure organometallic vapor phase epitaxy Journal of Crystal Growth. 73: 37-42. DOI: 10.1016/0022-0248(85)90327-6 |
0.529 |
|
| 1985 |
Enquist P, Lunardi LM, Welch DF, Wicks GW, Shealy JR, Eastman LF, Calawa AR. OPTIMIZATION OF THE INJECTION EFFICIENCY ( gamma ) OF THE HBT BY STUDYING ELECTROLUMINESCENCE (EL) OF MBE HETEROJUNCTION DIODES Institute of Physics Conference Series. 599-604. |
0.498 |
|
| 1984 |
Wagner DK, Shealy JR. Graded band-gap AlGaAs solar cells grown by MOVPE Journal of Crystal Growth. 68: 474-476. DOI: 10.1016/0022-0248(84)90452-4 |
0.335 |
|
| 1984 |
Shealy JR, Schaus CF, Eastman LF. Photoluminescence of OMVPE grown AlGaAs: The effect of composition, doping and the substrate Journal of Crystal Growth. 68: 305-310. DOI: 10.1016/0022-0248(84)90430-5 |
0.514 |
|
| 1983 |
Shealy JR, Wicks GW, Ohno H, Eastman LF. Influence of Substrate Temperature on the Growth of AlGaAs/GaAs Quantum Well Heterostructures by Organometallic Vapor Phase Epitaxy Japanese Journal of Applied Physics. 22. DOI: 10.1143/Jjap.22.L639 |
0.643 |
|
| 1983 |
Shealy JR, Kreismanis VG, Wagner DK, Wicks GW, Schaff WJ, Xu ZY, Ballantyne JM, Eastman LF, Griffiths R. CHARACTERIZATION OF HIGH-PURITY GaAs GROWN BY LOW-PRESSURE OMVPE Institute of Physics Conference Series. 109-116. |
0.487 |
|
| 1983 |
Shealy JR, Wicks GW, Ohno H, Eastman LF. INFLUENCE OF SUBSTRATE TEMPERATURE ON THE GROWTH OF AlGaAs/GaAs QUANTUM WELL HETEROSTRUCTURES BY ORGANOMETALLIC VAPOR PHASE EPITAXY Japanese Journal of Applied Physics, Part 2: Letters. 22: 639-641. |
0.523 |
|
| 1982 |
Shealy JR, Woodall JM. A new technique for gettering oxygen and moisture from gases used in semiconductor processing Applied Physics Letters. 41: 88-90. DOI: 10.1063/1.93299 |
0.491 |
|
| 1981 |
Shealy JR, Baliga BJ, Field RJ, Ghandhi SK. Preparation and Properties of Zinc Oxide Films Grown by the Oxidation of Diethylzinc Journal of the Electrochemical Society. 128: 558-561. DOI: 10.1149/1.2127457 |
0.559 |
|
| 1981 |
Baliga BJ, Ehle R, Shealy JR, Garwacki W. Breakdown Characteristics of Gallium Arsenide Ieee Electron Device Letters. 2: 302-304. DOI: 10.1109/Edl.1981.25442 |
0.368 |
|
| 1981 |
Shealy JR. Liquid phase epitaxy of high-purity GaAs on conducting n-type substrates Journal of Applied Physics. 52: 4640-4645. DOI: 10.1063/1.329344 |
0.384 |
|
| 1980 |
Ghandhi SK, Field RJ, Shealy JR. Highly oriented zinc oxide films grown by the oxidation of diethylzinc Applied Physics Letters. 37: 449-451. DOI: 10.1063/1.91960 |
0.576 |
|
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