| Year |
Citation |
Score |
| 2020 |
Mbeunmi ABP, El-Gahouchi M, Arvinte R, Jaouad A, Cheriton R, Wilkins M, Valdivia CE, Hinzer K, Fafard S, Aimez V, Arès R, Boucherif A. Direct growth of GaAs solar cells on Si substrate via mesoporous Si buffer Solar Energy Materials and Solar Cells. 217: 110641. DOI: 10.1016/J.Solmat.2020.110641 |
0.63 |
|
| 2020 |
Mbeunmi ABP, Arvinte R, Pelletier H, Jellite M, Arès R, Fafard S, Boucherif A. Growth of Ge epilayers using iso-butylgermane (IBGe) and its memory effect in an III-V chemical beam epitaxy reactor Journal of Crystal Growth. 547: 125807. DOI: 10.1016/J.Jcrysgro.2020.125807 |
0.392 |
|
| 2019 |
Diallo TM, Mbeunmi ABP, El-Gahouchi M, Jellite M, Arvinte R, Aziziyan MR, Arès R, Fafard S, Boucherif A. Hybrid epitaxy technique for the growth of high-quality AlInAs and GaInAs layers on InP substrates Journal of Vacuum Science & Technology B. 37: 31208. DOI: 10.1116/1.5088962 |
0.327 |
|
| 2019 |
Wilkins MM, Ishigaki M, Provost P, Masson D, Fafard S, Valdivia CE, Dede EM, Hinzer K. Ripple-Free Boost-Mode Power Supply Using Photonic Power Conversion Ieee Transactions On Power Electronics. 34: 1054-1064. DOI: 10.1109/Tpel.2018.2843158 |
0.592 |
|
| 2019 |
York MCA, Proulx F, Gilard O, Bechou L, Ares R, Aimez V, Masson DP, Fafard S. III–V Laser Power Converters With Vertically Stacked Subcells Demonstrating Superior Radiation Resilience Ieee Transactions On Nuclear Science. 66: 938-945. DOI: 10.1109/Tns.2019.2916027 |
0.372 |
|
| 2019 |
Chancerel F, Regreny P, Leclercq J, Brottet S, Volatier M, Jaouad A, Darnon M, Fafard S, Blanchard N, Gendry M, Aimez V. Epitaxial lift-off of InGaAs solar cells from InP substrate using a strained AlAs/InAlAs superlattice as a novel sacrificial layer Solar Energy Materials and Solar Cells. 195: 204-212. DOI: 10.1016/J.Solmat.2019.02.013 |
0.366 |
|
| 2019 |
de Lafontaine M, Pargon E, Petit-Etienne C, Gay G, Jaouad A, Gour M, Volatier M, Fafard S, Aimez V, Darnon M. Influence of plasma process on III-V/Ge multijunction solar cell via etching Solar Energy Materials and Solar Cells. 195: 49-54. DOI: 10.1016/J.Solmat.2019.01.048 |
0.329 |
|
| 2018 |
Richard O, Aimez V, Arès R, Fafard S, Jaouad A. Simulation of through-cell vias contacts under non-uniform concentrated light profiles Solar Energy Materials and Solar Cells. 188: 241-248. DOI: 10.1016/J.Solmat.2018.08.023 |
0.321 |
|
| 2017 |
Chahal S, Wilkins MM, Masson DP, Fafard S, Valdivia CE, Hinzer K. 20-junction photonic power converter performance under non-uniform illumination calculated by 3D distributed circuit model (Conference Presentation) Proceedings of Spie. 10099: 1009908. DOI: 10.1117/12.2252919 |
0.633 |
|
| 2017 |
Wilkins MM, Gupta J, Jaouad A, Bouzazi B, Fafard S, Boucherif A, Valdivia CE, Arès R, Aimez V, Schriemer HP, Hinzer K. Design of thin InGaAsN(Sb) n - i - p junctions for use in four-junction concentrating photovoltaic devices Journal of Photonics For Energy. 7: 022502. DOI: 10.1117/1.Jpe.7.022502 |
0.64 |
|
| 2017 |
de Lafontaine M, Darnon M, Colin C, Bouzazi B, Volatier M, Ares R, Fafard S, Aimez V, Jaouad A. Impact of Via Hole Integration on Multijunction Solar Cells for Through Cell Via Contacts and Associated Passivation Treatment Ieee Journal of Photovoltaics. 7: 1456-1461. DOI: 10.1109/Jphotov.2017.2711423 |
0.413 |
|
| 2017 |
York MCA, Fafard S. High efficiency phototransducers based on a novel vertical epitaxial heterostructure architecture (VEHSA) with thin p/n junctions Journal of Physics D. 50: 173003. DOI: 10.1088/1361-6463/Aa60A6 |
0.401 |
|
| 2016 |
York M, Proulx F, Masson DP, Jaouad A, Bouzazi B, Arès R, Aimez V, Fafard S. Thin n/p GaAs Junctions for Novel High-Efficiency Phototransducers
Based on a Vertical Epitaxial Heterostructure Architecture Mrs Advances. 1: 881-890. DOI: 10.1557/Adv.2016.9 |
0.446 |
|
| 2016 |
Fafard S, Proulx F, York MCA, Wilkins M, Valdivia CE, Bajcsy M, Ban D, Jaouad A, Bouzazi B, Arès R, Aimez V, Hinzer K, Masson DP. Advances with vertical epitaxial heterostructure architecture (VEHSA) phototransducers for optical to electrical power conversion efficiencies exceeding 50 percent Proceedings of Spie - the International Society For Optical Engineering. 9743. DOI: 10.1117/12.2218486 |
0.664 |
|
| 2016 |
Wilkins M, Valdivia CE, Chahal S, Ishigaki M, Masson DP, Fafard S, Hinzer K. Performance impact of luminescent coupling on monolithic 12-junction phototransducers for 12 v photonic power systems Proceedings of Spie - the International Society For Optical Engineering. 9743. DOI: 10.1117/12.2213727 |
0.666 |
|
| 2016 |
York MCA, Proulx F, Masson DP, Jaouad A, Bouzazi B, Arès R, Aimez V, Fafard S. Enhanced photocarrier extraction mechanisms in ultra-thin photovoltaic GaAs n/p junctions Proceedings of Spie. 9743. DOI: 10.1117/12.2212960 |
0.312 |
|
| 2016 |
Cheriton R, Wilkins MM, Sharma P, Valdivia CE, Trojnar AH, Schriemer H, Hinzer K, Gupta J, Bouzazi B, Kolhatkar G, Boucherif A, Jaouad A, Fafard S, Aimez V, Arès R. Design optimizations of InGaAsN(Sb) subcells for concentrator photovoltaic systems Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. 34. DOI: 10.1116/1.4939754 |
0.612 |
|
| 2016 |
Zribi J, Ilahi B, Paquette B, Jaouad A, Theriault O, Hinzer K, Cheriton R, Patriarche G, Fafard S, Aimez V, Ares R, Morris D. Effect of Dot-Height Truncation on the Device Performance of Multilayer InAs/GaAs Quantum Dot Solar Cells Ieee Journal of Photovoltaics. DOI: 10.1109/Jphotov.2016.2514708 |
0.731 |
|
| 2016 |
Fafard S, Proulx F, York MCA, Richard LS, Provost PO, Arès R, Aimez V, Masson DP. High-photovoltage GaAs vertical epitaxial monolithic heterostructures with 20 thin p/n junctions and a conversion efficiency of 60% Applied Physics Letters. 109: 131107. DOI: 10.1063/1.4964120 |
0.436 |
|
| 2016 |
Fafard S, York MCA, Proulx F, Valdivia CE, Wilkins MM, Arès R, Aimez V, Hinzer K, Masson DP. Ultrahigh efficiencies in vertical epitaxial heterostructure architectures Applied Physics Letters. 108. DOI: 10.1063/1.4941240 |
0.657 |
|
| 2016 |
Richard O, Jaouad A, Bouzazi B, Arès R, Fafard S, Aimez V. Simulation of a through cell via contacts architecture for HCPV multi-junction solar cells Solar Energy Materials and Solar Cells. 144: 173-180. DOI: 10.1016/J.Solmat.2015.08.032 |
0.34 |
|
| 2016 |
Proulx F, York MCA, Provost PO, Arès R, Aimez V, Masson DP, Fafard S. Measurement of strong photon recycling in ultra-thin GaAs n/p junctions monolithically integrated in high-photovoltage vertical epitaxial heterostructure architectures with conversion efficiencies exceeding 60% Physica Status Solidi (Rrl) - Rapid Research Letters. 11: 1600385. DOI: 10.1002/Pssr.201600385 |
0.47 |
|
| 2016 |
Kolhatkar G, Boucherif A, Ataellah Bioud Y, Fafard S, Ruediger A, Aimez V, Arès R. Electrical and structural properties of AlGaNAs alloys grown by chemical beam epitaxy Physica Status Solidi (B) Basic Research. 253: 918-922. DOI: 10.1002/Pssb.201552617 |
0.336 |
|
| 2015 |
Valdivia CE, Wilkins MM, Bouzazi B, Jaouad A, Aimez V, Arès R, Masson DP, Fafard S, Hinzer K. Five-volt vertically-stacked, single-cell GaAs photonic power converter Proceedings of Spie - the International Society For Optical Engineering. 9358. DOI: 10.1117/12.2079824 |
0.631 |
|
| 2015 |
Wilkins M, Valdivia CE, Gabr AM, Masson D, Fafard S, Hinzer K. Luminescent coupling in planar opto-electronic devices Journal of Applied Physics. 118. DOI: 10.1063/1.4932660 |
0.671 |
|
| 2015 |
Masson D, Proulx F, Fafard S. Pushing the limits of concentrated photovoltaic solar cell tunnel junctions in novel high‐efficiency GaAs phototransducers based on a vertical epitaxial heterostructure architecture Progress in Photovoltaics. 23: 1687-1696. DOI: 10.1002/Pip.2709 |
0.429 |
|
| 2013 |
Turala A, Jaouad A, Masson DP, Fafard S, Arès R, Aimez V. Isolation of III-V/Ge Multijunction Solar Cells by Wet Etching International Journal of Photoenergy. 2013: 1-7. DOI: 10.1155/2013/583867 |
0.339 |
|
| 2013 |
Miloszewski JM, Wartak MS, Wallace SG, Fafard S. Theoretical investigation of carrier capture and escape processes in cylindrical quantum dots Journal of Applied Physics. 114. DOI: 10.1063/1.4824469 |
0.547 |
|
| 2013 |
Paquette B, De Vita M, Turala A, Kolhatkar G, Boucherif A, Jaouad A, Wilkins M, Wheeldon JF, Walker AW, Hinzer K, Fafard S, Aimez V, Arès R. Chemical beam epitaxy growth of AlGaAs/GaAs tunnel junctions using trimethyl aluminium for multijunction solar cells Aip Conference Proceedings. 1556: 48-52. DOI: 10.1063/1.4822197 |
0.644 |
|
| 2012 |
Kolhatkar G, Wheeldon JF, Valdivia CE, Walker AW, Fafard S, Turala A, Jaouad A, ArÈs R, Aimez V, Hinzer K. Current-voltage measurements within the negative differential resistance region of AlGaAs/AlGaAs tunnel junctions for high concentration photovoltaics International Journal of Nanoscience. 11. DOI: 10.1142/S0219581X12400145 |
0.628 |
|
| 2012 |
Homier R, Jaouad A, Turala A, Valdivia CE, Masson D, Wallace SG, Fafard S, Arès R, Aimez V. Antireflection coating design for triple-junction III-VGe high-efficiency solar cells using low absorption PECVD silicon nitride Ieee Journal of Photovoltaics. 2: 393-397. DOI: 10.1109/Jphotov.2012.2198793 |
0.354 |
|
| 2011 |
Yandt MD, Wheeldon JF, Valdivia CE, Chow S, Thériault O, Johnson A, Szadkowski F, Armstrong M, Motte L, Cassidy T, Sivillà I, Berrios J, Rosier B, Wallace SG, Fafard S, et al. A new on-sun test facility at the 'SUNRISE' quantum-dot-enhanced CPV module demonstration system Aip Conference Proceedings. 1407: 224-227. DOI: 10.1063/1.3658332 |
0.655 |
|
| 2011 |
Wheeldon JF, Walker A, Valdivia CE, Chow S, Theriault O, Beal R, Yandt M, Masson D, Riel B, McMeekin D, Puetz N, Wallace SG, Aimez V, Arès R, Hall TJ, ... Fafard S, et al. Efficiency measurements and simulations of GaInP/InGaAs/Ge quantum dot enhanced solar cells at up to 1000-suns under flash and continuous concentration Aip Conference Proceedings. 1407: 220-223. DOI: 10.1063/1.3658331 |
0.666 |
|
| 2011 |
Wheeldon JF, Valdivia CE, Walker AW, Kolhatkar G, Jaouad A, Turala A, Riel B, Masson D, Puetz N, Fafard S, Araè R, Aimez V, Hall TJ, Hinzer K. Performance comparison of AlGaAs, GaAs and InGaP tunnel junctions for concentrated multijunction solar cells Progress in Photovoltaics: Research and Applications. 19: 442-452. DOI: 10.1002/Pip.1056 |
0.658 |
|
| 2010 |
Chow S, Valdivia CE, Wheeldon JF, Ares R, Arenas OJ, Aimez V, McMeekin D, Fafard S, Hinzer K. Thermal test and simulation of alumina receiver with high efficiency multi-junction solar cell for concentrator systems Proceedings of Spie - the International Society For Optical Engineering. 7750. DOI: 10.1117/12.872894 |
0.596 |
|
| 2010 |
Wheeldon JF, Valdivia CE, Masson D, Proulx F, Riel B, Puetz N, Desfonds E, Fafard S, Rioux B, SpringThorpe AJ, Arès R, Aimez V, Armstrong M, Swinton M, Cook J, et al. High-efficiency commercial grade 1 cm2 AlGaInP/GaAs/Ge solar cells with embedded InAs quantum dots for concentrator demonstration system Proceedings of Spie - the International Society For Optical Engineering. 7750. DOI: 10.1117/12.872890 |
0.675 |
|
| 2010 |
Kolhatkar G, Wheeldon JF, Valdivia CE, Walker AW, Fafard S, Turala A, Jaouad A, Arès R, Aimez V, Hinzer K. Time-dependent analysis of AlGaAs/AlGaAs tunnel junctions for high efficiency multi-junction solar cells Proceedings of Spie - the International Society For Optical Engineering. 7750. DOI: 10.1117/12.872886 |
0.591 |
|
| 2010 |
Valdivia CE, Chow S, Fafard S, Thériault O, Yandt M, Wheeldon JF, Springthorpe AJ, Rioux B, McMeekin D, Masson D, Riel B, Aimez V, Arès R, Cook J, Hall TJ, et al. Measurement of high efficiency 1 cm2 AlGaInP/InGaAs/Ge solar cells with embedded InAs quantum dots at up TO 1000 suns continuous concentration Conference Record of the Ieee Photovoltaic Specialists Conference. 1253-1258. DOI: 10.1109/PVSC.2010.5614192 |
0.703 |
|
| 2010 |
Wheeldon JF, Valdivia CE, Walker A, Kolhatkar G, Masson D, Riel B, Fafard S, Jaouad A, Turala A, Arès R, Aimez V, Hall TJ, Hinzer K. GaAs, AlGaAs and InGaP tunnel junctions for multi-junction solar cells under concentration: Resistance study Aip Conference Proceedings. 1277: 28-31. DOI: 10.1063/1.3509213 |
0.617 |
|
| 2009 |
Wheeldon JF, Valdivia CE, Walker A, Kolhatkar G, Hall TJ, Hinzer K, Masson D, Fafard S, Jaouad A, Turala A, Arés R, Aimez V. AlGaAs tunnel junction for high efficiency multi-junction solar cells: Simulation and measurement of temperature-dependent operation Conference Record of the Ieee Photovoltaic Specialists Conference. 000106-000111. DOI: 10.1109/PVSC.2009.5411723 |
0.608 |
|
| 2008 |
Awirothananon S, Raymond S, Studenikin S, Vachon M, Render W, Sachrajda A, Wu X, Babinski A, Potemski M, Fafard S, Cheng SJ, Korkusinski M, Hawrylak P. Single-exciton energy shell structure in InAs/GaAs quantum dots Physical Review B. 78. DOI: 10.1103/Physrevb.78.235313 |
0.389 |
|
| 2006 |
Babinski A, Ortner G, Raymond S, Potemski M, Bayer M, Sheng W, Hawrylak P, Wasilewski Z, Fafard S, Forchel A. Ground-state emission from a single InAsGaAs self-assembled quantum dot structure in ultrahigh magnetic fields Physical Review B - Condensed Matter and Materials Physics. 74. DOI: 10.1103/Physrevb.74.075310 |
0.386 |
|
| 2006 |
Allen CN, Ortner G, Dion C, Poole PJ, Barrios P, Lapointe J, Pakulski G, Render W, Fafard S, Raymond S. External-cavity quantum-dot laser tunable through 1.55 μm Applied Physics Letters. 88. DOI: 10.1063/1.2185248 |
0.386 |
|
| 2005 |
Ortner G, Oulton R, Kurtze H, Schwab M, Yakovlev DR, Bayer M, Fafard S, Wasilewski Z, Hawrylak P. Energy relaxation of electrons in InAs/GaAs quantum dot molecules Physical Review B - Condensed Matter and Materials Physics. 72. DOI: 10.1103/Physrevb.72.165353 |
0.5 |
|
| 2005 |
Ortner G, Schwab M, Bayer M, Pässler R, Fafard S, Wasilewski Z, Hawrylak P, Forchel A. Temperature dependence of the excitonic band gap in InxGa1-xAs GaAs self-assembled quantum dots Physical Review B - Condensed Matter and Materials Physics. 72. DOI: 10.1103/Physrevb.72.085328 |
0.437 |
|
| 2005 |
Bardot C, Schwab M, Bayer M, Fafard S, Wasilewski Z, Hawrylak P. Exciton lifetime inInAs∕GaAsquantum dot molecules Physical Review B. 72. DOI: 10.1103/Physrevb.72.035314 |
0.52 |
|
| 2005 |
Ulrich SM, Benyoucef M, Michler P, Baer N, Gartner P, Jahnke F, Schwab M, Kurtze H, Bayer M, Fafard S, Wasilewski Z, Forchel A. Correlated photon-pair emission from a charged single quantum dot Physical Review B - Condensed Matter and Materials Physics. 71. DOI: 10.1103/Physrevb.71.235328 |
0.479 |
|
| 2005 |
Ortner G, Yugova I, Baldassarri Höger Von Högersthal G, Larionov A, Kurtze H, Yakovlev DR, Bayer M, Fafard S, Wasilewski Z, Hawrylak P, Lyanda-Geller YB, Reinecke TL, Babinski A, Potemski M, Timofeev VB, et al. Fine structure in the excitonic emission of InAs/GaAs quantum dot molecules Physical Review B - Condensed Matter and Materials Physics. 71. DOI: 10.1103/Physrevb.71.125335 |
0.522 |
|
| 2005 |
Ulrich SM, Benyoucef M, Michler P, Wiersig J, Baer N, Gartner P, Jahnke F, Schwab M, Kurtze H, Oulton R, Bayer M, Fafard S, Wasilewski Z, Forchel A. Single-photon and photon pair emission from individual (In,Ga)As quantum dots Aip Conference Proceedings. 772: 661-664. DOI: 10.1063/1.1994280 |
0.426 |
|
| 2005 |
Ortner G, Yugova I, Larionov A, Baldassarri H.v.h. G, Bayer M, Hawrylak P, Fafard S, Wasilewski Z. Experimental demonstration of coherent coupling of two quantum dots Physica E: Low-Dimensional Systems and Nanostructures. 26: 281-285. DOI: 10.1016/J.Physe.2004.08.064 |
0.547 |
|
| 2005 |
Allen C, Poole P, Barrios P, Marshall P, Pakulski G, Raymond S, Fafard S. External cavity quantum dot tunable laser through 1.55μm Physica E: Low-Dimensional Systems and Nanostructures. 26: 372-376. DOI: 10.1016/J.PHYSE.2004.08.009 |
0.386 |
|
| 2005 |
Langbein W, Borri P, Woggon U, Schwab M, Bayer M, Fafard S, Wasilewski Z, Hawrylak P, Stavarache V, Reuter D, Wieck A. Coherent dynamics in InGaAs quantum dots and quantum dot molecules Physica E: Low-Dimensional Systems and Nanostructures. 26: 400-407. DOI: 10.1016/J.Physe.2004.08.004 |
0.548 |
|
| 2004 |
Fafard S, Hinzer K, Allen CN. Semiconductor Quantum Dot Nanostructures and their Roles in the Future of Photonics Brazilian Journal of Physics. 34: 550-554. DOI: 10.1590/S0103-97332004000400003 |
0.73 |
|
| 2004 |
Awirothananon S, Sheng WD, Babinski A, Studenikin S, Raymond S, Sachrajda A, Potemski M, Fafard S, Ortner G, Bayer M. Electronic and Structural Properties of Interdiffused Self-Assembled Quantum Dots from Magneto-Photoluminescence Japanese Journal of Applied Physics. 43: 2088-2092. DOI: 10.1143/Jjap.43.2088 |
0.516 |
|
| 2004 |
Hinzer K, Bayer M, Stern O, Gorbunov A, Forchel AWB, Hawrylak P, Lapointe J, Fafard S. Single-dot spectroscopy of multiexcitons in AlInAs/AlGaAs quantum dots Proceedings of Spie - the International Society For Optical Engineering. 4087: 559-564. DOI: 10.1117/12.406453 |
0.692 |
|
| 2004 |
Allen CN, Dubowski JJ, Piva PG, Fafard S. Quantum dot intermixing with thermal and laser annealing Proceedings of Spie - the International Society For Optical Engineering. 4087: 1188-1193. DOI: 10.1117/12.406366 |
0.379 |
|
| 2004 |
Ortner G, Yakovlev DR, Bayer M, Rudin S, Reinecke TL, Fafard S, Wasilewski Z, Forchel A. Temperature dependence of the zero-phonon linewidth in InAs/GaAs quantum dots Physical Review B - Condensed Matter and Materials Physics. 70: 201301-1-201301-4. DOI: 10.1103/Physrevb.70.201301 |
0.529 |
|
| 2004 |
Ortner G, Schwab M, Borri P, Langbein W, Woggon U, Bayer M, Fafard S, Wasilewski Z, Hawrylak P, Lyanda-Geller YB, Reinecke TL, Forchel A. Exciton states in self-assembled InAs/GaAs quantum dot molecules Physica E: Low-Dimensional Systems and Nanostructures. 25: 249-260. DOI: 10.1016/J.Physe.2004.06.024 |
0.548 |
|
| 2003 |
Borri P, Langbein W, Woggon U, Schwab M, Bayer M, Fafard S, Wasilewski Z, Hawrylak P. Exciton dephasing in quantum dot molecules. Physical Review Letters. 91: 267401. PMID 14754087 DOI: 10.1103/PhysRevLett.91.267401 |
0.419 |
|
| 2003 |
Ortner G, Bayer M, Larionov A, Timofeev VB, Forchel A, Lyanda-Geller YB, Reinecke TL, Hawrylak P, Fafard S, Wasilewski Z. Fine structure of excitons in InAs/GaAs coupled auantum dots: a sensitive test of electronic coupling. Physical Review Letters. 90: 086404. PMID 12633447 DOI: 10.1103/Physrevlett.90.086404 |
0.404 |
|
| 2003 |
Liu HC, Duboz J-, Dudek R, Wasilewski ZR, Fafard S, Finnie P. Quantum dot infrared photodetectors Physica E-Low-Dimensional Systems & Nanostructures. 17: 631-633. DOI: 10.1016/S1386-9477(02)00913-X |
0.513 |
|
| 2003 |
Bayer M, Ortner G, Larionov A, Kress A, Forchel A, Hawrylak P, Hinzer K, Korkusinski M, Fafard S, Wasilewski Z, Reinecke TL, Lyanda-Geller Y. Entangled exciton states in quantum dot molecules Proceedings of Spie - the International Society For Optical Engineering. 5023: 522-525. DOI: 10.1016/S1386-9477(01)00462-3 |
0.693 |
|
| 2003 |
Allen C, Poole P, Marshall P, Raymond S, Fafard S. Tunable InAs quantum-dot lasers grown on (100) InP Microelectronics Journal. 34: 415-417. DOI: 10.1016/S0026-2692(03)00037-5 |
0.411 |
|
| 2003 |
De Souza CF, Ruda HE, Fafard S. Surface photovoltage studies of multilayered structures Journal of Electroanalytical Chemistry. 559: 49-53. DOI: 10.1016/S0022-0728(03)00041-X |
0.452 |
|
| 2002 |
Ménard S, Beerens J, Morris D, Aimez V, Beauvais J, Fafard S. Magneto–photoluminescence study of intermixed self-assembled InAs/GaAs quantum dots Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 20: 1501. DOI: 10.1116/1.1495504 |
0.462 |
|
| 2002 |
Bayer M, Ortner G, Stern O, Kuther A, Gorbunov AA, Forchel A, Hawrylak P, Fafard S, Hinzer K, Reinecke TL, Walck SN, Reithmaier JP, Klopf F, Schäfer F. Fine structure of neutral and charged excitons in self-assembled In(Ga)As/(Al)GaAs quantum dots Physical Review B. 65. DOI: 10.1103/Physrevb.65.195315 |
0.694 |
|
| 2002 |
Allen CN, Poole PJ, Marshall P, Fraser J, Raymond S, Fafard S. InAs self-assembled quantum-dot lasers grown on (100) InP Applied Physics Letters. 80: 3629-3631. DOI: 10.1063/1.1479200 |
0.402 |
|
| 2002 |
Korkusinski M, Hawrylak P, Bayer M, Ortner G, Forchel A, Fafard S, Wasilewski Z. Entangled states of electron-hole complex in a single InAs/GaAs coupled quantum dot molecule Physica E: Low-Dimensional Systems and Nanostructures. 13: 610-615. DOI: 10.1016/S1386-9477(02)00198-4 |
0.544 |
|
| 2002 |
Hawrylak P, Korkusinski M, Fafard S, Dudek R, Liu H. Photo-current spectroscopy of modulation doped InAs self-assembled quantum dots Physica E: Low-Dimensional Systems and Nanostructures. 13: 246-250. DOI: 10.1016/S1386-9477(01)00530-6 |
0.516 |
|
| 2002 |
Bayer M, Ortner G, Forchel A, Hawrylak P, Fafard S. Fine structure of excitons: A sensitive tool for probing the symmetry of self-assembled quantum dots Physica E: Low-Dimensional Systems and Nanostructures. 13: 123-126. DOI: 10.1016/S1386-9477(01)00501-X |
0.504 |
|
| 2002 |
Bayer M, Ortner G, Larionov A, Timofeev V, Forchel A, Hawrylak P, Hinzer K, Korkusinski M, Fafard S, Wasilewski Z. Entangled exciton states in quantum dot molecules Physica E: Low-Dimensional Systems and Nanostructures. 12: 900-903. DOI: 10.1016/S1386-9477(01)00462-3 |
0.682 |
|
| 2002 |
Riel BJ, Hinzer K, Moisa S, Fraser J, Finnie P, Piercy P, Fafard S, Wasilewski ZR. Inas/Gaas(100) Self-Assembled Quantum Dots, Arsenic Pressure And Capping Effects Journal of Crystal Growth. 236: 145-154. DOI: 10.1016/S0022-0248(01)02391-0 |
0.657 |
|
| 2001 |
Bayer M, Hawrylak P, Hinzer K, Fafard S, Korkusinski M, Wasilewski ZR, Stern O, Forchel A. Coupling and entangling of quantum states in quantum dot molecules. Science (New York, N.Y.). 291: 451-3. PMID 11161192 DOI: 10.1126/Science.291.5503.451 |
0.717 |
|
| 2001 |
Hinzer K, Hawrylak P, Korkusinski M, Fafard S, Bayer M, Stern O, Gorbunov A, Forchel A. Optical spectroscopy of a singleAl0.36In0.64As/Al0.33Ga0.67Asquantum dot Physical Review B. 63. DOI: 10.1103/Physrevb.63.075314 |
0.644 |
|
| 2001 |
Allen CN, Finnie P, Raymond S, Wasilewski ZR, Fafard S. Inhomogeneous broadening in quantum dots with ternary aluminum alloys Applied Physics Letters. 79: 2701-2703. DOI: 10.1063/1.1410333 |
0.479 |
|
| 2001 |
McCaffrey JP, Robertson MD, Poole PJ, Riel BJ, Fafard S. Interpretation and modeling of buried InAs quantum dots on QaAs and InP substrates Journal of Applied Physics. 90: 1784-1787. DOI: 10.1063/1.1384861 |
0.435 |
|
| 2001 |
Hinzer K, Bayer M, McCaffrey JP, Hawrylak P, Korkusinski M, Stern O, Wasilewski ZR, Fafard S, Forchel A. Optical spectroscopy of electronic states in a single pair of vertically coupled self-assembled quantum dots Physica Status Solidi (B) Basic Research. 224: 385-392. DOI: 10.1002/1521-3951(200103)224:2<385::Aid-Pssb385>3.0.Co;2-B |
0.714 |
|
| 2001 |
Bayer M, Forchel A, Hawrylak P, Fafard S, Narvaez G. Excitonic States in In(Ga)As Self-Assembled Quantum Dots Physica Status Solidi (B). 224: 331-336. DOI: 10.1002/1521-3951(200103)224:2<331::Aid-Pssb331>3.0.Co;2-A |
0.525 |
|
| 2000 |
Bayer M, Stern O, Hawrylak P, Fafard S, Forchel A. Hidden symmetries in the energy levels of excitonic 'artificial atoms' Nature. 405: 923-6. PMID 10879527 DOI: 10.1038/35016020 |
0.494 |
|
| 2000 |
Hinzer K, Allen CN, Lapointe J, Picard D, Wasilewski ZR, Fafard S, SpringThorpe AJ. Widely tunable self-assembled quantum dot lasers Journal of Vacuum Science and Technology. 18: 578-581. DOI: 10.1116/1.582229 |
0.699 |
|
| 2000 |
Perret N, Morris D, Franchomme-Fossé L, Côté R, Fafard S, Aimez V, Beauvais J. Origin of the inhomogenous broadening and alloy intermixing in InAs/GaAs self-assembled quantum dots Physical Review B. 62: 5092-5099. DOI: 10.1103/Physrevb.62.5092 |
0.528 |
|
| 2000 |
Raymond S, Hinzer K, Fafard S, Merz JL. Experimental determination of Auger capture coefficients in self-assembled quantum dots Physical Review B. 61. DOI: 10.1103/Physrevb.61.R16331 |
0.72 |
|
| 2000 |
Hinzer K, Lapointe J, Feng Y, Delâge A, Fafard S, SpringThorpe AJ, Griswold EM. Short-wavelength laser diodes based on AlInAs/AlGaAs self-assembled quantum dots Journal of Applied Physics. 87: 1496-1502. DOI: 10.1063/1.372040 |
0.709 |
|
| 2000 |
Dubowski JJ, Allen CN, Fafard S. Laser-induced InAs/GaAs quantum dot intermixing Applied Physics Letters. 77: 3583-3585. DOI: 10.1063/1.1323997 |
0.44 |
|
| 2000 |
McCaffrey JP, Robertson MD, Fafard S, Wasilewski ZR, Griswold EM, Madsen LD. Determination of the size, shape, and composition of indium-flushed self-assembled quantum dots by transmission electron microscopy Journal of Applied Physics. 88: 2272-2277. DOI: 10.1063/1.1287226 |
0.399 |
|
| 2000 |
Piva PG, Goldberg RD, Mitchell IV, Labrie D, Leon R, Charbonneau S, Wasilewski ZR, Fafard S. Enhanced degradation resistance of quantum dot lasers to radiation damage Applied Physics Letters. 77: 624-626. DOI: 10.1063/1.127065 |
0.435 |
|
| 2000 |
Fafard S. Near-surface InAs/GaAs quantum dots with sharp electronic shells Applied Physics Letters. 76: 2707-2709. DOI: 10.1063/1.126450 |
0.406 |
|
| 2000 |
Fafard S, Spanner M, McCaffrey JP, Wasilewski ZR. Coupled InAs/GaAs quantum dots with well-defined electronic shells Applied Physics Letters. 76: 2268-2270. DOI: 10.1063/1.126317 |
0.437 |
|
| 2000 |
Fafard S. Quantum dot structures and devices with sharp adjustable electronic shells Physica E-Low-Dimensional Systems & Nanostructures. 8: 107-116. DOI: 10.1016/S1386-9477(00)00126-0 |
0.539 |
|
| 2000 |
Raymond S, Fafard S, Hinzer K, Charbonneau S, Merz JL. Temporal cross-section for carrier capture by self-assembled quantum dots Microelectronic Engineering. 53: 241-244. DOI: 10.1016/S0167-9317(00)00306-3 |
0.725 |
|
| 1999 |
Wellman J, George T, Leon R, Fafard S, Zou J, Cockayne DJH. Transmission Electron Microscopy Study of InGaAs/GaAs Structural Evolution Near the Stranski-Krastanow Transformation Mrs Proceedings. 570: 175-180. DOI: 10.1557/Proc-570-175 |
0.466 |
|
| 1999 |
Leon R, Marcinkevičius S, Liao XZ, Zou J, Cockayne DJH, Fafard S. Ensemble interactions in strained semiconductor quantum dots Physical Review B. 60. DOI: 10.1103/Physrevb.60.R8517 |
0.528 |
|
| 1999 |
Raymond S, Guo X, Merz JL, Fafard S. Excited-state radiative lifetimes in self-assembled quantum dots obtained from state-filling spectroscopy Physical Review B. 59: 7624-7631. DOI: 10.1103/Physrevb.59.7624 |
0.368 |
|
| 1999 |
Fafard S, Wasilewski ZR, Allen CN, Picard D, Spanner M, McCaffrey JP, Piva PG. Manipulating the energy levels of semiconductor quantum dots Physical Review B. 59: 15368-15373. DOI: 10.1103/Physrevb.59.15368 |
0.52 |
|
| 1999 |
Morris D, Perret N, Fafard S. Carrier energy relaxation by means of Auger processes in InAs/GaAs self-assembled quantum dots Applied Physics Letters. 75: 3593-3595. DOI: 10.1063/1.125398 |
0.446 |
|
| 1999 |
Fafard S, Allen CN. Intermixing in quantum-dot ensembles with sharp adjustable shells Applied Physics Letters. 75: 2374-2376. DOI: 10.1063/1.125019 |
0.552 |
|
| 1999 |
Fafard S, Wasilewski ZR, Spanner M. Evolution of the energy levels in quantum dot ensembles with different densities Applied Physics Letters. 75: 1866-1868. DOI: 10.1063/1.124854 |
0.549 |
|
| 1999 |
Fafard S, Wasilewski ZR, Allen CN, Hinzer K, McCaffrey JP, Feng Y. Lasing in quantum-dot ensembles with sharp adjustable electronic shells Applied Physics Letters. 75: 986-988. DOI: 10.1063/1.124253 |
0.699 |
|
| 1999 |
Leon R, Lobo C, Liao X, Zou J, Cockayne D, Fafard S. Island shape instabilities and surfactant-like effects in the growth of InGaAs/GaAs quantum dots Thin Solid Films. 357: 40-45. DOI: 10.1016/S0040-6090(99)00472-1 |
0.411 |
|
| 1999 |
Wasilewski ZR, Fafard S, McCaffrey JP. Size and shape engineering of vertically stacked self-assembled quantum dots Journal of Crystal Growth. 201202: 1131-1135. DOI: 10.1016/S0022-0248(98)01539-5 |
0.532 |
|
| 1999 |
Yang F, Hinzer K, Allen CN, Fafard S, Aers GC, Feng Y, McCaffrey J, Charbonneau S. Quantum dot p-i-n structure in an electric field Superlattices and Microstructures. 25: 419-424. DOI: 10.1006/Spmi.1998.0669 |
0.726 |
|
| 1999 |
Fafard S, Wasilewski ZR, Allen CN, Picard D, Piva PG, McCaffrey JP. Self-Assembled Quantum Dots : Five Years Later Superlattices and Microstructures. 25: 87-96. DOI: 10.1006/Spmi.1998.0619 |
0.55 |
|
| 1998 |
Piva PG, Goldberg RD, Mitchell IV, Fafard S, Dion M, Buchanan M, Charbonneau S, Hillier G, Miner C. Reduced 980 nm laser facet absorption by band gap shifted extended cavities Journal of Vacuum Science & Technology B. 16: 1790-1793. DOI: 10.1116/1.590230 |
0.362 |
|
| 1998 |
Leon R, Fafard S, Piva PG, Ruvimov S, Liliental-Weber Z. Tunable intersublevel transitions in self-forming semiconductor quantum dots Physical Review B. 58. DOI: 10.1103/Physrevb.58.R4262 |
0.389 |
|
| 1998 |
Leon R, Fafard S. Structural and radiative evolution in quantum dots near the In x Ga 1 − x A s / G a A s Stranski-Krastanow transformation Physical Review B. 58. DOI: 10.1103/Physrevb.58.R1726 |
0.449 |
|
| 1998 |
Raymond S, Reynolds JP, Merz JL, Fafard S, Feng Y, Charbonneau S. Asymmetric Stark shift in Al x In 1-x As/Al y Ga 1-y As self-assembled dots Physical Review B. 58. DOI: 10.1103/Physrevb.58.R13415 |
0.397 |
|
| 1998 |
Lobo C, Leon R, Fafard S, Piva PG. Intermixing induced changes in the radiative emission from III-V quantum dots Applied Physics Letters. 72: 2850-2852. DOI: 10.1063/1.121478 |
0.547 |
|
| 1998 |
Leon R, Lobo C, Chin TP, Woodall JM, Fafard S, Ruvimov S, Liliental-Weber Z, Kalceff MAS. Self-forming InAs/GaP quantum dots by direct island growth Applied Physics Letters. 72: 1356-1358. DOI: 10.1063/1.121070 |
0.52 |
|
| 1998 |
Hinzer K, Fafard S, SpringThorpe AJ, Arlett J, Griswold EM, Feng Y, Charbonneau S. Room temperature operation of AlInAs/AlGaAs quantum dot lasers Physica E-Low-Dimensional Systems & Nanostructures. 2: 729-733. DOI: 10.1016/S1386-9477(98)00149-0 |
0.715 |
|
| 1998 |
Wójs A, Hawrylak P, Fafard S, Jacak L. Theory of luminescence from highly excited self-assembled quantum dots Physica E: Low-Dimensional Systems and Nanostructures. 2: 603-608. DOI: 10.1016/S1386-9477(98)00123-4 |
0.485 |
|
| 1998 |
Fafard S, Hinzer K, Springthorpe AJ, Feng Y, McCaffrey J, Charbonneau S, Griswold EM. Temperature effects in semiconductor quantum dot lasers Materials Science and Engineering B-Advanced Functional Solid-State Materials. 51: 114-117. DOI: 10.1016/S0921-5107(97)00241-9 |
0.698 |
|
| 1998 |
Hinzer K, Fafard S, SpringThorpe AJ, Arlett J, Griswold EM, Feng Y, Charbonneau S. Room temperature operation of AlInAs/AlGaAs quantum dot lasers Physica E: Low-Dimensional Systems and Nanostructures. 2: 729-733. |
0.689 |
|
| 1998 |
Arlett J, Yang F, Hinzer K, Fafard S, Feng Y, Charbonneau S, Leon R. Temperature independent lifetime in InAlAs quantum dots Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 16: 578-581. |
0.675 |
|
| 1997 |
Fafard S. Wavefunction engineering for enhanced quantum well intermixing and integrated infrared spectrometers Journal of Applied Physics. 82: 3857-3860. DOI: 10.1063/1.365751 |
0.335 |
|
| 1997 |
Piva PG, Fafard S, Dion M, Buchanan M, Charbonneau S, Goldberg RD, Mitchell IV. Reduction of InGaAs/GaAs laser facet temperatures by band gap shifted extended cavities Applied Physics Letters. 70: 1662-1664. DOI: 10.1063/1.118663 |
0.313 |
|
| 1997 |
Tsiper EV, Wang PD, Merz JL, Efros AL, Fafard S, Leonard D, Petroff PM. Anomalous magnetophotoluminescence as a result of level repulsion in arrays of quantum dots Solid State Communications. 104: 391-395. DOI: 10.1016/S0038-1098(97)00358-X |
0.399 |
|
| 1997 |
Raymond S, Hawrylak P, Gould C, Fafard S, Sachrajda A, Potemski M, Wojs A, Charbonneau S, Leonard D, Petroff P, Merz J. Exciton droplets in zero dimensional systems in a magnetic field Solid State Communications. 101: 883-887. DOI: 10.1016/S0038-1098(96)00750-8 |
0.36 |
|
| 1997 |
Raymond S, Fafard S, Poole P, Wojs A, Hawrylak P, Gould C, Sachrajda S, Charbonneau S, Leonard D, Leon R, Petroff P, Merz J. State-filling and magneto-photoluminescence of excited states in InGaAs/GaAs self-assembled quantum dots Superlattices and Microstructures. 21: 541-558. DOI: 10.1006/Spmi.1996.0194 |
0.453 |
|
| 1997 |
Wang PD, Merz JL, Medeiros-Ribeiro G, Fafard S, Petroff PM, Akiyama H, Sakaki H. Luminescence spectroscopy of InAs self-assembled quantum dots Superlattices and Microstructures. 21: 259-266. DOI: 10.1006/Spmi.1996.0193 |
0.539 |
|
| 1996 |
Wojs A, Hawrylak P, Fafard S, Jacak L. Electronic structure and magneto-optics of self-assembled quantum dots. Physical Review. B, Condensed Matter. 54: 5604-5608. PMID 9986523 DOI: 10.1103/Physrevb.54.5604 |
0.465 |
|
| 1996 |
Raymond S, Fafard S, Poole PJ, Wojs A, Hawrylak P, Charbonneau S, Leonard D, Leon R, Petroff PM, Merz JL. State filling and time-resolved photoluminescence of excited states in InxGa1-xAs/GaAs self-assembled quantum dots. Physical Review. B, Condensed Matter. 54: 11548-11554. PMID 9984943 DOI: 10.1103/Physrevb.54.11548 |
0.437 |
|
| 1996 |
Wang PD, Merz JL, Fafard S, Leon R, Leonard D, Medeiros-Ribeiro G, Oestreich M, Petroff PM, Uchida K, Miura N, Akiyama H, Sakaki H. Magnetoluminescence studies of InyAl1-yAs self-assembled quantum dots in AlxGa1-xAs matrices. Physical Review. B, Condensed Matter. 53: 16458-16461. PMID 9983487 DOI: 10.1103/Physrevb.53.16458 |
0.513 |
|
| 1996 |
Fafard S, Hinzer K, Raymond S, Dion M, McCaffrey J, Feng Y, Charbonneau S. Red-Emitting Semiconductor Quantum Dot Lasers Science (New York, N.Y.). 274: 1350-3. PMID 8910269 DOI: 10.1126/Science.274.5291.1350 |
0.727 |
|
| 1996 |
Raymond S, Fafard S, Charbonneau S. Temperature dependence of ultrasharp luminescence lines in AlyIn1−yAs/AlxGa1−xAs self-assembled quantum dots Canadian Journal of Physics. 74: 216-219. DOI: 10.1139/P96-862 |
0.372 |
|
| 1996 |
Fafard S, Wasilewski Z, McCaffrey J, Raymond S, Charbonneau S. InAs self-assembled quantum dots on InP by molecular beam epitaxy Applied Physics Letters. 68: 991-993. DOI: 10.1063/1.116122 |
0.507 |
|
| 1996 |
Wang PD, Merz JL, Fafard S, Leon R, Leonard D, Medeiros-Ribeiro G, Oestreich M, Petroff PM, Ledentsov NN, Kop'ev PS, Ustinov VM, Uchida K, Miura N, Akiyama H, Sakaki H, et al. Magneto-optical properties of InAs monolayers and InyAl1−yAs self-assembled quantum dots in Ga(Al)As matrices Physica B-Condensed Matter. 227: 378-383. DOI: 10.1016/0921-4526(96)00447-4 |
0.529 |
|
| 1996 |
Fafard S, Raymond S, Wang G, Leon R, Leonard D, Charbonneau S, Merz JL, Petroff PM, Bowers JE. Temperature effects on the radiative recombination in self-assembled quantum dots Surface Science. 361: 778-782. DOI: 10.1016/0039-6028(96)00532-8 |
0.542 |
|
| 1995 |
Leon R, Petroff PM, Leonard D, Fafard S. Spatially resolved visible luminescence of self-assembled semiconductor quantum dots. Science (New York, N.Y.). 267: 1966-8. PMID 17770108 DOI: 10.1126/Science.267.5206.1966 |
0.513 |
|
| 1995 |
Raymond S, Fafard S, Charbonneau S, Leon R, Leonard D, Petroff PM, Merz JL. Photocarrier recombination in AlyIn1-yAs/AlxGa1-xAs self-assembled quantum dots. Physical Review. B, Condensed Matter. 52: 17238-17242. PMID 9981152 |
0.405 |
|
| 1995 |
Leon R, Fafard S, Leonard D, Merz JL, Petroff PM. Visible luminescence from semiconductor quantum dots in large ensembles Applied Physics Letters. 67: 521-523. DOI: 10.1063/1.115175 |
0.537 |
|
| 1995 |
Sherwin MS, Craig K, Galdrikian B, Heyman J, Markelz A, Campman K, Fafard S, Hopkins PF, Gossard A. Nonlinear quantum dynamics in semiconductor quantum wells Physica D: Nonlinear Phenomena. 83: 229-242. DOI: 10.1016/0167-2789(94)00266-S |
0.478 |
|
| 1994 |
Fafard S. Bound states of near-surface multiple-quantum-well structures: Evolution of the Tamm states with the cap-layer thickness. Physical Review. B, Condensed Matter. 50: 1961-1964. PMID 9976391 |
0.302 |
|
| 1994 |
Fafard S, Leon R, Leonard D, Merz JL, Petroff PM. Visible photoluminescence from N-dot ensembles and the linewidth of ultrasmall AlyIn1-yAs/AlxGa1-xAs quantum dots. Physical Review. B, Condensed Matter. 50: 8086-8089. PMID 9974817 |
0.433 |
|
| 1994 |
Fafard S, Leonard D, Merz JL, Petroff PM. Selective excitation of the photoluminescence and the energy levels of ultrasmall InGaAs/GaAs quantum dots Applied Physics Letters. 65: 1388-1390. DOI: 10.1063/1.112060 |
0.503 |
|
| 1994 |
Wang G, Fafard S, Leonard D, Bowers JE, Merz JL, Petroff PM. Time‐resolved optical characterization of InGaAs/GaAs quantum dots Applied Physics Letters. 64: 2815-2817. DOI: 10.1063/1.111434 |
0.555 |
|
| 1994 |
Fafard S, Leon R, Leonard D, Merz JL, Petroff PM. O-dimensional-induced optical properties in self-assembled quantum dots Superlattices and Microstructures. 16: 303-309. DOI: 10.1016/S0749-6036(09)80020-7 |
0.483 |
|
| 1994 |
Gossard A, Fafard S. Quantum-engineering of III–V semiconductor structures Solid State Communications. 92: 63-70. DOI: 10.1016/0038-1098(94)90859-1 |
0.481 |
|
| 1993 |
Fafard S, Zhang YH, Merz JL. Miniband formation in asymmetric double-quantum-well superlattice structures. Physical Review. B, Condensed Matter. 48: 12308-12311. PMID 10007588 DOI: 10.1103/Physrevb.48.12308 |
0.52 |
|
| 1993 |
Fafard S, Fortin E, Merz JL. Excitation-intensity-dependent photoluminescence quenching due to electric-field screening by photocarriers captured in single-quantum-well structures. Physical Review. B, Condensed Matter. 48: 11062-11066. PMID 10007412 DOI: 10.1103/Physrevb.48.11062 |
0.406 |
|
| 1993 |
Fafard S, Fortin E, Roth AP. Effects of an electric field on the continuum energy levels in InxGa1-xAs/GaAs quantum wells terminated with thin cap layers. Physical Review. B, Condensed Matter. 47: 10588-10595. PMID 10005172 DOI: 10.1103/PhysRevB.47.10588 |
0.357 |
|
| 1992 |
Fafard S, Fortin E, Roth AP. Oscillatory behavior of the continuum states in InxGa1-xAs/GaAs quantum wells due to capping-barrier layers of finite size. Physical Review. B, Condensed Matter. 45: 13769-13772. PMID 10001481 DOI: 10.1103/PhysRevB.45.13769 |
0.357 |
|
| 1991 |
Fafard S, Fortin E, Roth AP. Sequential optical study of the component layers of a semiconductor quantum-well system Canadian Journal of Physics. 69: 346-352. DOI: 10.1139/P91-058 |
0.424 |
|
| 1991 |
Fortin E, Fafard S, Anedda A, Ledda F, Charlebois A. Photoluminescence of MgIn2S4 and HgIn2S4 Solid State Communications. 77: 165-167. DOI: 10.1016/0038-1098(91)90878-Y |
0.328 |
|
| 1989 |
Fortin E, Hua BY, Roth AP, Charlebois A, Fafard S, Lacelle C. Luminescence, level saturation, and optical gain in a single InGaAs/GaAs quantum well Journal of Applied Physics. 66: 4854-4857. DOI: 10.1063/1.343802 |
0.407 |
|
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