Year |
Citation |
Score |
2003 |
Tzeng SY, Cich MJ, Zhao R, Feick H, Weber ER. Generation-recombination low-frequency noise signatures in GaAs metal-semiconductor field-effect transistors on laterally oxidized AlAs Applied Physics Letters. 82: 1063-1065. DOI: 10.1063/1.1555710 |
0.667 |
|
2002 |
Zhao RA, Cich MJ, Specht P, Weber ER. In situ diffuse reflectance spectroscopy investigation of low-temperature-grown GaAs Applied Physics Letters. 80: 2060-2062. DOI: 10.1063/1.1463215 |
0.714 |
|
2001 |
Zhukov AE, Zhao R, Specht P, Ustinov VM, Anders A, Weber ER. MBE growth of (In)GaAsN on GaAs using a constricted DC plasma source Semiconductor Science and Technology. 16: 413-419. DOI: 10.1088/0268-1242/16/5/323 |
0.508 |
|
2001 |
Gebauer J, Zhao R, Specht P, Weber ER, Börner F, Redmann F, Krause-Rehberg R. Does beryllium doping suppress the formation of Ga vacancies in nonstoichiometric GaAs layers grown at low temperatures Applied Physics Letters. 79: 4313-4315. DOI: 10.1063/1.1427150 |
0.661 |
|
2001 |
Gebauer J, Zhao R, Specht P, Börner F, Redmann F, Krause-Rehberg R, Weber ER. Native point defects in non-stoichiometric GaAs doped with beryllium Physica B-Condensed Matter. 308: 812-815. DOI: 10.1016/S0921-4526(01)00810-9 |
0.569 |
|
2001 |
Specht P, Cich MJ, Zhao R, Gebauer J, Luysberg M, Weber ER. Incorporation and thermal stability of defects in highly p-conductive non-stoichiometric GaAs: Be Physica B: Condensed Matter. 308: 808-811. DOI: 10.1016/S0921-4526(01)00809-2 |
0.739 |
|
2001 |
Park Y, Cich MJ, Zhao R, Specht P, Feick H, Weber ER. AFM study of lattice matched and strained InGaAsN layers on GaAs Physica B: Condensed Matter. 308: 98-101. DOI: 10.1016/S0921-4526(01)00669-X |
0.698 |
|
2000 |
Liu WK, Lubyshev DI, Specht P, Zhao R, Weber ER, Gebauer J, SpringThorpe AJ, Streater RW, Vijarnwannaluk S, Songprakob W, Zallen R. Properties of carbon-doped low-temperature GaAs and InP grown by solid-source molecular-beam epitaxy using CBr4 Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 18: 1594-1597. DOI: 10.1116/1.591434 |
0.618 |
|
2000 |
Park Y, Cich MJ, Zhao R, Specht P, Weber ER, Stach E, Nozaki S. Analysis of twin defects in GaAs(111)B molecular beam epitaxy growth Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 18: 1566-1571. DOI: 10.1116/1.591427 |
0.718 |
|
1999 |
Cich MJ, Zhao R, Park Y, Specht P, Weber ER. ELectrical Characterization of Beryllium Doped Low Temperature MBE Grown GaAs Mrs Proceedings. 570: 129. DOI: 10.1557/Proc-570-129 |
0.72 |
|
1999 |
Specht P, Lutz RC, Zhao R, Weber ER, Liu WK, Bacher K, Towner FJ, Stewart TR, Luysberg M. Improvement of molecular beam epitaxy-grown low-temperature GaAs through p doping with Be and C Journal of Vacuum Science & Technology B. 17: 1200-1204. DOI: 10.1116/1.590747 |
0.655 |
|
1999 |
Lutz RC, Specht P, Zhao R, Lam OH, Borner F, Gebauer J, Krause-Rehberg R, Weber ER. Native point defect analysis in non-stoichiometric GaAs: An annealing study Physica B: Condensed Matter. 273: 722-724. DOI: 10.1016/S0921-4526(99)00621-3 |
0.64 |
|
1999 |
Liu WK, Bacher K, Towner FJ, Stewart TR, Reed C, Specht P, Lutz RC, Zhao R, Weber ER. Properties of C-doped LT-GaAs grown by MBE using CBr4 Journal of Crystal Growth. 201202: 217-220. DOI: 10.1016/S0022-0248(98)01325-6 |
0.642 |
|
1998 |
Lutz RC, Specht P, Zhao R, Jeong S, Bokor J, Weber ER. Thermal Stabilization of Non-Stoichiometric GaAs through Beryllium Doping Mrs Proceedings. 510: 55. DOI: 10.1557/Proc-510-55 |
0.533 |
|
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