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Brian S. Swartzentruber, Ph.D. - Publications

Affiliations: 
1983-1986 AT&T Bell Laboratories 
 1986-1992 Physics University of Wisconsin, Madison, Madison, WI 
 1992- Sandia National Laboratories 
Area:
Condensed Matter Physics
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65 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2018 Bussmann E, Gamble JK, Koepke JC, Laroche D, Huang SH, Chuang Y, Li J, Liu CW, Swartzentruber BS, Lilly MP, Carroll MS, Lu T. Atomic-layer doping of SiGe heterostructures for atomic-precision donor devices Physical Review Materials. 2. DOI: 10.1103/Physrevmaterials.2.066004  0.353
2018 Song E, Baranovskiy A, Xu E, Busani T, Swartzentruber B, Zhang S, Amouyal Y, Martinez JA. Manipulating thermal and electronic transports in thermoelectric Bi2Te3 nanowires by porphyrin adsorption Aip Advances. 8: 105010. DOI: 10.1063/1.5046385  0.307
2017 Li Z, Xu E, Losovyj Y, Li N, Chen A, Swartzentruber B, Sinitsyn N, Yoo J, Jia Q, Zhang S. Surface oxidation and thermoelectric properties of indium-doped tin telluride nanowires. Nanoscale. PMID 28832046 DOI: 10.1039/C7Nr04934J  0.393
2016 Xu E, Li Z, Acosta JA, Li N, Swartzentruber B, Zheng S, Sinitsyn N, Htoon H, Wang J, Zhang S. Enhanced thermoelectric properties of topological crystalline insulator PbSnTe nanowires grown by vapor transport Nano Research. 1-11. DOI: 10.1007/S12274-015-0961-1  0.363
2015 Song E, Li Q, Swartzentruber B, Pan W, Wang GT, Martinez JA. Enhanced thermoelectric transport in modulation-doped GaN/AlGaN core/shell nanowires. Nanotechnology. 27: 015204. PMID 26606258 DOI: 10.1088/0957-4484/27/1/015204  0.322
2015 Léonard F, Song E, Li Q, Swartzentruber B, Martinez JA, Wang GT. Simultaneous Thermoelectric and Optoelectronic Characterization of Individual Nanowires. Nano Letters. PMID 26529491 DOI: 10.1021/Acs.Nanolett.5B03572  0.326
2015 Nguyen BM, Swartzentruber B, Ro YG, Dayeh SA. Facet-Selective Nucleation and Conformal Epitaxy of Ge Shells on Si Nanowires. Nano Letters. 15: 7258-64. PMID 26447652 DOI: 10.1021/Acs.Nanolett.5B02313  0.467
2015 Xu EZ, Li Z, Martinez JA, Sinitsyn N, Htoon H, Li N, Swartzentruber B, Hollingsworth JA, Wang J, Zhang SX. Diameter dependent thermoelectric properties of individual SnTe nanowires. Nanoscale. 7: 2869-76. PMID 25623253 DOI: 10.1039/C4Nr05870D  0.324
2013 Martinez JA, Cho J, Liu X, Luk TS, Huang J, Picraux ST, Sullivan JP, Swartzentruber BS. Contribution of radial dopant concentration to the thermoelectric properties of core-shell nanowires Applied Physics Letters. 102: 103101. DOI: 10.1063/1.4794821  0.319
2012 Iza DC, Muñoz-Rojas D, Jia Q, Swartzentruber B, Macmanus-Driscoll JL. Tuning of defects in ZnO nanorod arrays used in bulk heterojunction solar cells. Nanoscale Research Letters. 7: 655. PMID 23186280 DOI: 10.1186/1556-276X-7-655  0.326
2012 Seo MA, Dayeh SA, Upadhya PC, Martinez JA, Swartzentruber BS, Picraux ST, Taylor AJ, Prasankumar RP. Understanding ultrafast carrier dynamics in single quasi-one-dimensional Si nanowires Applied Physics Letters. 100: 071104. DOI: 10.1063/1.3685487  0.373
2011 Harris CT, Martinez JA, Shaner EA, Huang JY, Swartzentruber BS, Sullivan JP, Chen G. Fabrication of a nanostructure thermal property measurement platform. Nanotechnology. 22: 275308. PMID 21602618 DOI: 10.1088/0957-4484/22/27/275308  0.351
2010 Bussmann E, Swartzentruber BS. Ge diffusion at the Si(100) surface. Physical Review Letters. 104: 126101. PMID 20366550 DOI: 10.1103/Physrevlett.104.126101  0.434
2010 Talin AA, Léonard F, Katzenmeyer AM, Swartzentruber BS, Picraux ST, Toimil-Molares ME, Cederberg JG, Wang X, Hersee SD, Rishinaramangalum A. Transport characterization in nanowires using an electrical nanoprobe Semiconductor Science and Technology. 25. DOI: 10.1088/0268-1242/25/2/024015  0.352
2009 Léonard F, Talin AA, Swartzentruber BS, Picraux ST. Diameter-dependent electronic transport properties of Au-catalyst/Ge-nanowire Schottky diodes. Physical Review Letters. 102: 106805. PMID 19392144 DOI: 10.1103/Physrevlett.102.106805  0.344
2009 Talin AA, Swartzentruber BS, Ĺonard F, Wang X, Hersee SD. Electrical transport in GaN nanowires grown by selective epitaxy Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 27: 2040-2043. DOI: 10.1116/1.3123302  0.358
2008 Bussmann E, Bockenhauer S, Himpsel FJ, Swartzentruber BS. One-dimensional defect-mediated diffusion of Si adatoms on the Si(111)-(5×2)-Au surface Physical Review Letters. 101. DOI: 10.1103/PhysRevLett.101.266101  0.38
2007 Anderson ML, Bartelt NC, Feibelman PJ, Swartzentruber BS, Kellogg GL. How Pb-overlayer islands move fast enough to self-assemble on Pb-Cu surface alloys. Physical Review Letters. 98: 096106. PMID 17359178  0.666
2007 Solis KJ, Williams LR, Swartzentruber BS, Han SM. Addimer chain structures: Metastable precursors to island formation on Ge-Si(0 0 1)-(2 × n) alloyed surface Surface Science. 601: 172-177. DOI: 10.1016/J.Susc.2006.09.015  0.367
2006 Anderson M, Bartelt N, Feibelman P, Swartzentruber B, Kellogg G. The effect of embedded Pb on Cu diffusion on Pb/Cu(111) surface alloys Surface Science. 600: 1901-1908. DOI: 10.1016/J.Susc.2006.02.034  0.351
2003 Sanders LM, Stumpf R, Mattsson TR, Swartzentruber BS. Changing the diffusion mechanism of Ge-Si dimers on Si(001) using an electric field. Physical Review Letters. 91: 206104. PMID 14683380 DOI: 10.1103/Physrevlett.91.206104  0.45
2003 Anderson ML, D'Amato MJ, Feibelman PJ, Swartzentruber BS. Vacancy-mediated and exchange diffusion in a Pb/Cu(111) surface alloy: concurrent diffusion on two length scales. Physical Review Letters. 90: 126102. PMID 12688887  0.653
2003 Anderson M, Bartelt N, Swartzentruber B. The importance of Pb-vacancy attractions on diffusion in the Pb/Cu(001) surface alloy Surface Science. 538: 53-58. DOI: 10.1016/S0039-6028(03)00644-7  0.381
2003 Mattsson TR, Swartzentruber B, Stumpf R, Feibelman PJ. Electric field effects on surface dynamics: Si ad-dimer diffusion and rotation on Si() Surface Science. 536: 121-129. DOI: 10.1016/S0039-6028(03)00565-X  0.419
2000 Lu ZY, Liu F, Wang CZ, Qin XR, Swartzentruber BS, Lagally MG, Ho KM. Unique dynamic appearance of a Ge-Si Ad-dimer on Si(001) Physical Review Letters. 85: 5603-5606. PMID 11136057 DOI: 10.1103/Physrevlett.85.5603  0.712
2000 Qin XR, Swartzentruber BS, Lagally MG. Diffusional kinetics of SiGe dimers on Si(100) using atom-tracking scanning tunneling microscopy Physical Review Letters. 85: 3660-3663. PMID 11030975 DOI: 10.1103/Physrevlett.85.3660  0.719
2000 Hannon JB, Hibino H, Bartelt NC, Swartzentruber BS, Ogino T, Kellogg GL. Dynamics of the silicon (111) surface phase transition Nature. 405: 552-554. PMID 10850710 DOI: 10.1038/35014569  0.389
1998 Hannon JB, Swartzentruber BS, Kellogg GL, Bartelt NC. LEEM Measurements of Step Energies at the (001) Surface of Heavily Boron-Doped Silicon Surface Review and Letters. 5: 1159-1165. DOI: 10.1142/S0218625X98001493  0.444
1998 Qin XR, Liu F, Swartzentruber BS, Lagally MG. Modification of Si(100) Substrate Bonding by Adsorbed Ge or Si Dimer Islands Physical Review Letters. 81: 2288-2291. DOI: 10.1103/Physrevlett.81.2288  0.719
1998 Carpinelli JM, Swartzentruber BS. Direct measurement of field effects on surface diffusion Physical Review B. 58: R13423-R13425. DOI: 10.1103/Physrevb.58.R13423  0.456
1998 Zandvliet HJW, Swartzentruber BS, Wulfhekel WCU, Hattink BJ, Poelsema B. Spontaneous formation of an ordered c(4×2)-(2×1) domain pattern on Ge(001) Physical Review B. 57: 6803-6806. DOI: 10.1103/Physrevb.57.R6803  0.321
1998 Adams DP, Mayer TM, Swartzentruber BS. Influence of interfacial hydrogen on Al thin film nucleation on Si Journal of Applied Physics. 83: 4690-4694. DOI: 10.1063/1.367256  0.403
1998 Carpinelli JM, Swartzentruber B. Detailed energetic interactions of adsorbed Si dimers on Si(001) Surface Science. 411: L828-L833. DOI: 10.1016/S0039-6028(98)00400-2  0.533
1997 Hannon JB, Bartelt NC, Swartzentruber BS, Hamilton JC, Kellogg GL. Step Faceting at the (001) Surface of Boron Doped Silicon Physical Review Letters. 79: 4226-4229. DOI: 10.1103/Physrevlett.79.4226  0.423
1997 Swartzentruber BS. Kinetics of Si monomer trapping at steps and islands on Si(001) Physical Review B. 55: 1322-1325. DOI: 10.1103/PHYSREVB.55.1322  0.417
1997 Swartzentruber BS. Atomic-scale dynamics of atoms and dimers on the Si(001) surface Surface Science. 386: 195-206. DOI: 10.1016/S0039-6028(97)00298-7  0.51
1997 Swartzentruber B. Si ad-dimer interactions with steps and islands on Si(001) Surface Science. 374: 277-282. DOI: 10.1016/S0039-6028(96)01199-5  0.483
1997 Adams D, Mayer T, Chason E, Kellerman B, Swartzentruber B. Island structure evolution during chemical vapor deposition Surface Science. 371: 445-454. DOI: 10.1016/S0039-6028(96)01005-9  0.395
1996 Swartzentruber BS, Smith AP, Jonsson H. Experimental and Theoretical Study of the Rotation of Si Ad-dimers on the Si(100) Surface. Physical Review Letters. 77: 2518-2521. PMID 10061974 DOI: 10.1103/Physrevlett.77.2518  0.447
1996 Swartzentruber BS. Direct Measurement of Surface Diffusion Using Atom-Tracking Scanning Tunneling Microscopy Physical Review Letters. 76: 459-462. PMID 10061462 DOI: 10.1103/Physrevlett.76.459  0.445
1996 Adams DP, Mayer TM, Swartzentruber BS. Selective area growth of metal nanostructures Applied Physics Letters. 68: 2210-2212. DOI: 10.1063/1.115861  0.362
1995 Swartzentruber BS, Schacht M. Kinetics of atomic-scale fluctuations of steps on Si (001) measured with variable-temperature STM Surface Science. 322: 83-89. DOI: 10.1016/0039-6028(95)90019-5  0.422
1995 Swartzentruber BS, Matzke CM, Kendall DL, Houston JE. STM measurements of step-flow kinetics during atom removal by low-energy-ion bombardment of Si(001) Surface Science. 329: 83-89. DOI: 10.1016/0039-6028(95)00042-9  0.469
1994 Bouchard AM, Osbourn GC, Swartzentruber BS. New method for empirically determining surface electronic species from multiple-bias STM images: a multivariate classification approach Surface Science. 321: 276-286. DOI: 10.1016/0039-6028(94)90193-7  0.384
1993 Kitamura N, Swartzentruber BS, Lagally MG, Webb MB. Variable-temperature STM measurements of step kinetics on Si(001). Physical Review. B, Condensed Matter. 48: 5704-5707. PMID 10009100 DOI: 10.1103/Physrevb.48.5704  0.745
1991 Swartzentruber BS, Mo YW, Lagally MG. Domain boundary control of edge roughness in vicinal Si(001) Applied Physics Letters. 58: 822-824. DOI: 10.1063/1.104500  0.689
1991 Webb MB, Men FK, Swartzentruber BS, Kariotis R, Lagally MG. Surface step configurations under strain: kinetics and step-step interactions Surface Science. 242: 23-31. DOI: 10.1016/0039-6028(91)90236-L  0.735
1990 Mo Y, Savage DE, Swartzentruber BS, Lagally MG. Kinetic pathway in Stranski-Krastanov growth of Ge on Si(001). Physical Review Letters. 65: 1020-1023. PMID 10043085 DOI: 10.1103/Physrevlett.65.1020  0.642
1990 Swartzentruber BS, Mo Y, Kariotis R, Lagally MG, Webb MB. Direct determination of step and kink energies on vicinal Si(001). Physical Review Letters. 65: 1913-1916. PMID 10042396 DOI: 10.1103/Physrevlett.65.1913  0.759
1990 Swartzentruber BS, Mo YW, Webb MB, Lagally MG. Observations of strain effects on the Si(001) surface using scanning tunneling microscopya) Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 8: 210-213. DOI: 10.1116/1.577068  0.758
1990 Mo YW, Kariotis R, Swartzentruber BS, Webb MB, Lagally MG. Scanning tunneling microscopy study of diffusion, growth, and coarsening of Si on Si (001) Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 8: 201-206. DOI: 10.1116/1.577066  0.775
1990 Webb MB, Men FK, Swartzentruber BS, Lagally MG. The effect of external stress on Si surfaces Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 8: 2658-2661. DOI: 10.1116/1.576689  0.762
1990 Kariotis R, Swartzentruber BS, Lagally MG. Model diffraction profiles parallel to rough step edges Journal of Applied Physics. 67: 2848-2852. DOI: 10.1063/1.345454  0.618
1989 Mo Y, Swartzentruber BS, Kariotis R, Webb MB, Lagally MG. Growth and equilibrium structures in the epitaxy of Si on Si(001). Physical Review Letters. 63: 2393-2396. PMID 10040877 DOI: 10.1103/Physrevlett.63.2393  0.772
1989 Becker RS, Swartzentruber BS, Vickers JS, Klitsner T. Dimer-adatom-stacking-fault (DAS) and non-DAS (111) semiconductor surfaces: A comparison of Ge(111)-c(2 x 8) to Si(111)-(2 x 2), -(5 x 5), -(7 x 7), and -(9 x 9) with scanning tunneling microscopy. Physical Review. B, Condensed Matter. 39: 1633-1647. PMID 9948378 DOI: 10.1103/Physrevb.39.1633  0.448
1989 Swartzentruber BS, Mo Y, Webb MB, Lagally MG. Scanning tunneling microscopy studies of structural disorder and steps on Si surfaces Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 7: 2901-2905. DOI: 10.1116/1.576167  0.787
1989 Lagally MG, Kariotis R, Swartzentruber BS, Mo YW. Ordering kinetics at surfaces Ultramicroscopy. 31: 87-98. DOI: 10.1016/0304-3991(89)90038-7  0.696
1988 Becker RS, Swartzentruber BS, Vickers JS, Hybertsen MS, Louie SG. Geometric and local electronic structure of Si(111)-As. Physical Review Letters. 60: 116-119. PMID 10038213 DOI: 10.1103/Physrevlett.60.116  0.534
1988 Becker RS, Swartzentruber BS, Vickers JS. Tunneling microscopy of silicon and germanium: Si(111) 7x7, SnGe(111) 7 Χ7, GeSi(111) 5 Χ 5, Si(111) 9 Χ 9, Ge(111) 2Χ8, Ge(100) 2Χ1, Si(110) 5 Χ1 Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 6: 472-477. DOI: 10.1116/1.575399  0.521
1987 Becker RS, Golovchenko JA, Swartzentruber BS. Atomic-scale surface modifications using a tunnelling microscope Nature. 325: 419-421. DOI: 10.1007/978-94-011-1812-5_41  0.586
1986 Becker RS, Golovchenko JA, Higashi GS, Swartzentruber BS. New reconstructions on silicon (111) surfaces. Physical Review Letters. 57: 1020-1023. PMID 10034225 DOI: 10.1103/Physrevlett.57.1020  0.629
1985 Becker RS, Golovchenko JA, Swartzentruber BS. Electron interferometry at crystal surfaces. Physical Review Letters. 55: 987-990. PMID 10032501 DOI: 10.1103/Physrevlett.55.987  0.552
1985 Becker RS, Golovchenko JA, Hamann DR, Swartzentruber BS. Real-space observation of surface states on Si(111)7 x 7 with the tunneling microscope. Physical Review Letters. 55: 2032-2034. PMID 10031992 DOI: 10.1103/Physrevlett.55.2032  0.644
1985 Becker RS, Golovchenko JA, McRae EG, Swartzentruber BS. Tunneling images of atomic steps on the Si(111)7 x 7 surface. Physical Review Letters. 55: 2028-2031. PMID 10031991 DOI: 10.1103/Physrevlett.55.2028  0.665
1985 Becker RS, Golovchenko JA, Swartzentruber BS. Tunneling images of germanium surface reconstructions and phase boundaries. Physical Review Letters. 54: 2678-2680. PMID 10031409 DOI: 10.1103/Physrevlett.54.2678  0.633
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