| Year |
Citation |
Score |
| 2019 |
Holden K, Dezelah CL, Conley JF. Atomic Layer Deposition of Transparent p-Type Semiconducting Nickel Oxide using Ni(DAD) and Ozone. Acs Applied Materials & Interfaces. PMID 31345025 DOI: 10.1021/Acsami.9B08926 |
0.408 |
|
| 2019 |
Jenkins M, Austin DZ, Conley JF, Fan J, Groot CHd, Jiang L, Fan Y, Ali R, Ghosh G, Orlowski M, King SW. Review—Beyond the highs and lows: A perspective on the future of dielectrics research for nanoelectronic devices Ecs Journal of Solid State Science and Technology. 8. DOI: 10.1149/2.0161910Jss |
0.303 |
|
| 2019 |
Holden KEK, Conley JF. Characterization of atomic layer deposited semiconducting Co3O4 Journal of Vacuum Science and Technology. 37: 20903. DOI: 10.1116/1.5064469 |
0.379 |
|
| 2019 |
Jenkins MA, Austin DZ, Holden KEK, Allman D, Conley JF. Laminate Al 2 O 3 /Ta 2 O 5 Metal/Insulator/Insulator/Metal (MIIM) Devices for High-Voltage Applications Ieee Transactions On Electron Devices. 66: 5260-5265. DOI: 10.1109/Ted.2019.2948140 |
0.336 |
|
| 2018 |
Septevani AA, Evans DAC, Hosseinmardi A, Martin DJ, Simonsen J, Conley JF, Annamalai PK. Atomic Layer Deposition of Metal Oxide on Nanocellulose for Enabling Microscopic Characterization of Polymer Nanocomposites. Small (Weinheim An Der Bergstrasse, Germany). e1803439. PMID 30328269 DOI: 10.1002/Smll.201803439 |
0.363 |
|
| 2018 |
Septevani AA, Evans DAC, Hosseinmardi A, Martin DJ, Simonsen J, Conley JF, Annamalai PK. Polymer Nanocomposites Characterization: Atomic Layer Deposition of Metal Oxide on Nanocellulose for Enabling Microscopic Characterization of Polymer Nanocomposites (Small 46/2018) Small. 14: 1870217. DOI: 10.1002/Smll.201870217 |
0.305 |
|
| 2016 |
Buesch C, Smith SW, Eschbach P, Conley JF, Simonsen J. The Microstructure of Cellulose Nanocrystal Aerogels as Revealed by Transmission Electron Microscope Tomography. Biomacromolecules. PMID 27500897 DOI: 10.1021/Acs.Biomac.6B00764 |
0.328 |
|
| 2016 |
Murari NM, Mansergh RH, Huang Y, Kast MG, Keszler DA, Conley JF. Aerosol jet fog (ajFOG) deposition of aluminum oxide phosphate thin films from an aqueous fog Journal of Materials Research. 31: 3303-3312. DOI: 10.1557/Jmr.2016.341 |
0.354 |
|
| 2016 |
Valdivia A, Tweet DJ, Conley JF. Atomic layer deposition of two dimensional MoS2 on 150 mm substrates Journal of Vacuum Science and Technology. 34: 21515. DOI: 10.1116/1.4941245 |
0.389 |
|
| 2015 |
Austin DZ, Allman D, Price D, Hose S, Conley JF. Plasma Enhanced Atomic Layer Deposition of Al 2 O 3 /SiO 2 MIM Capacitors Ieee Electron Device Letters. 36: 496-498. DOI: 10.1109/Led.2015.2412685 |
0.319 |
|
| 2015 |
Lampert LF, Barnum A, Smith SW, Conley JF, Jiao J. Phase transitions and in situ dynamics of crystal grain formation of alumina nanotubes templated by vertically aligned carbon nanotubes Rsc Advances. 5: 68251-68259. DOI: 10.1039/C5Ra12337B |
0.304 |
|
| 2014 |
Smith SW, Buesch C, Matthews DJ, Simonsen J, Conley JF. Improved oxidation resistance of organic/inorganic composite atomic layer deposition coated cellulose nanocrystal aerogels Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 32. DOI: 10.1116/1.4882239 |
0.35 |
|
| 2014 |
Smith SW, Wang W, Keszler DA, Conley JF. Solution based prompt inorganic condensation and atomic layer deposition of Al2O3 films: A side-by-side comparison Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 32. DOI: 10.1116/1.4874806 |
0.411 |
|
| 2014 |
Alimardani N, McGlone JM, Wager JF, Conley JF. Conduction processes in metal-insulator-metal diodes with Ta 2O5 and Nb2O5 insulators deposited by atomic layer deposition Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 32. DOI: 10.1116/1.4843555 |
0.348 |
|
| 2014 |
Austin DZ, Allman D, Price D, Hose S, Saly M, Conley JF. Atomic layer deposition of bismuth oxide using Bi(OCMe2iPr)3 and H2O Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 32: 01A113. DOI: 10.1116/1.4840835 |
0.398 |
|
| 2014 |
Alimardani N, Conley JF. Enhancing metal-insulator-insulator-metal tunnel diodes via defect enhanced direct tunneling Applied Physics Letters. 105: 82902. DOI: 10.1063/1.4893735 |
0.373 |
|
| 2014 |
Alimardani N, King SW, French BL, Tan C, Lampert BP, Conley JF. Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes Journal of Applied Physics. 116: 24508. DOI: 10.1063/1.4889798 |
0.382 |
|
| 2014 |
Lampert L, Smith S, Timonen B, Conley JF, Jiao J. Varying phases of alumina nanowires templated by vertically aligned carbon nanotubes grown via atomic layer deposition Microscopy and Microanalysis. 20: 1972-1973. DOI: 10.1017/S1431927614011593 |
0.311 |
|
| 2013 |
Rajachidambaram JS, Murali S, Conley JF, Golledge SL, Herman GS. Bipolar resistive switching in an amorphous zinc tin oxide memristive device Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 31. DOI: 10.1116/1.4767124 |
0.3 |
|
| 2013 |
Murali S, Rajachidambaram JS, Han SY, Chang CH, Herman GS, Conley JF. Resistive switching in zinc-tin-oxide Solid-State Electronics. 79: 248-252. DOI: 10.1016/J.Sse.2012.06.016 |
0.337 |
|
| 2012 |
Smith SW, Chan H, Buesch C, Simonsen J, Conley JF. Improved temperature stability of atomic layer deposition coated cellulose nanocrystal aerogels Materials Research Society Symposium Proceedings. 1465: 44-49. DOI: 10.1557/Opl.2012.1073 |
0.351 |
|
| 2012 |
Alimardani N, Cowell EW, Wager JF, Conley JF, Evans DR, Chin M, Kilpatrick SJ, Dubey M. Impact of electrode roughness on metal-insulator-metal tunnel diodes with atomic layer deposited Al 2O 3 tunnel barriers Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 30. DOI: 10.1116/1.3658380 |
0.318 |
|
| 2011 |
Waggoner T, Triska J, Hoshino K, Wager JF, Conley JF. Zirconium oxide-aluminum oxide nanolaminate gate dielectrics for amorphous oxide semiconductor thin-film transistors Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 29. DOI: 10.1116/1.3609254 |
0.425 |
|
| 2011 |
Herman GS, Rajachidambaram JS, Rajachidambaram MS, Han SY, Chang CH, Murali S, Conley JF. Transparent oxide semiconductors: Recent material developments and new applications Ieee Photonic Society 24th Annual Meeting, Pho 2011. 555-556. DOI: 10.1109/Pho.2011.6110668 |
0.374 |
|
| 2010 |
Huang CC, Pelatt BD, Conley JF. Directed integration of ZnO nanobridge sensors using photolithographically patterned carbonized photoresist. Nanotechnology. 21: 195307. PMID 20407146 DOI: 10.1088/0957-4484/21/19/195307 |
0.304 |
|
| 2010 |
Triska J, Conley JF, Presley R, Wager JF. Bias stress stability of zinc-tin-oxide thin-film transistors with Al 2O3 gate dielectrics Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 28. DOI: 10.1116/1.3455494 |
0.426 |
|
| 2010 |
Conley JF. Instabilities in Amorphous Oxide Semiconductor Thin-Film Transistors Ieee Transactions On Device and Materials Reliability. 10: 460-475. DOI: 10.1109/Tdmr.2010.2069561 |
0.433 |
|
| 2009 |
Conley J, Mason AD, Waggoner TJ, Smith SW, Gibbons B, Price D, Allman D. Hydrothermal Synthesis of Zinc Oxide Nanowires on Kevlar using ALD and Sputtered ZnO Seed Layers Mrs Proceedings. 1178. DOI: 10.1557/Proc-1178-Aa06-38 |
0.312 |
|
| 2009 |
Lenahan PM, Ryan JT, Cochrane CJ, Conley JF. Defects in HfO2 based dielectric gate stacks Materials Research Society Symposium Proceedings. 1155: 3-13. DOI: 10.1557/Proc-1155-C12-01 |
0.609 |
|
| 2009 |
Triska J, Conley JF, Presley R, Wager JF. Bias stability of zinc-tin-oxide thin film transistors with Al 2O3 gate dielectrics Ieee International Integrated Reliability Workshop Final Report. 86-89. DOI: 10.1109/IRWS.2009.5383025 |
0.303 |
|
| 2008 |
Lenahan PM, Knowlton B, Conley JF, Tonti B, Suehle J, Grasser T. Introduction to the Special Issue on the 2007 International Integrated Reliability Workshop Ieee Transactions On Device and Materials Reliability. 8: 490-490. DOI: 10.1109/Tdmr.2008.2006011 |
0.474 |
|
| 2006 |
Green JM, Dong L, Gutu T, Jiao J, Conley JF, Ono Y. ZnO-nanoparticle-coated carbon nanotubes demonstrating enhanced electron field-emission properties Journal of Applied Physics. 99: 94308. DOI: 10.1063/1.2194112 |
0.302 |
|
| 2006 |
Goncher G, Solanki R, Carruthers JR, Conley J, Ono Y. p-n junctions in silicon nanowires Journal of Electronic Materials. 35: 1509-1512. DOI: 10.1007/S11664-006-0140-Y |
0.346 |
|
| 2005 |
Dong L, Bush J, Chirayos V, Solanki R, Jiao J, Ono Y, Conley JF, Ulrich BD. Dielectrophoretically controlled fabrication of single-crystal nickel silicide nanowire interconnects. Nano Letters. 5: 2112-5. PMID 16218748 DOI: 10.1021/Nl051650+ |
0.306 |
|
| 2005 |
Ryan JT, Lenahan PM, Kang AY, Conley JF, Bersuker G, Lysaght P. Identification of the atomic scale defects involved in radiation damage in HfO 2 based MOS devices Ieee Transactions On Nuclear Science. 52: 2272-2275. DOI: 10.1109/Tns.2005.860665 |
0.435 |
|
| 2005 |
Conley JF, Bersuker G, Lenahan PM. Introduction to the special issue on high-k dielectric reliability Ieee Transactions On Device and Materials Reliability. 5: 3-4. DOI: 10.1109/TDMR.2005.847999 |
0.423 |
|
| 2005 |
Conley JF, Stecker L, Ono Y. Directed assembly of ZnO nanowires on a Si substrate without a metal catalyst using a patterned ZnO seed layer Nanotechnology. 16: 292-296. DOI: 10.1088/0957-4484/16/2/020 |
0.361 |
|
| 2004 |
Senzaki Y, Park S, Tweet D, Conley JF, Ono Y. Ozone-Based Atomic Layer Deposition of HfO 2 and Hf x Si 1-x O 2 and Film Characterization Mrs Proceedings. 811. DOI: 10.1557/Proc-811-D7.4 |
0.354 |
|
| 2004 |
Gao W, Conley JF, Ono Y. NbO as gate electrode for n-channel metal-oxide-semiconductor field-effect-transistors Applied Physics Letters. 84: 4666-4668. DOI: 10.1063/1.1759780 |
0.362 |
|
| 2004 |
Conley JF, Ono Y, Tweet DJ. Densification and improved electrical properties of pulse-deposited films via in situ modulated temperature annealing Applied Physics Letters. 84: 1913-1915. DOI: 10.1063/1.1667619 |
0.358 |
|
| 2004 |
Conley JF, Ono Y, Tweet DJ, Solanki R. Pulsed deposition of metal–oxide thin films using dual metal precursors Applied Physics Letters. 84: 398-400. DOI: 10.1063/1.1643545 |
0.412 |
|
| 2003 |
Conley JF, Ono Y, Solanki R, Tweet DJ. Thin HfO 2 Films Deposited via Alternating Pulses of Hf(NO 3 ) 4 and HfCl 4 Mrs Proceedings. 765. DOI: 10.1557/Proc-765-D3.7 |
0.307 |
|
| 2003 |
Gao W, Conley JF, Sharp YO. Stacked Metal Layers as Gates for MOSFET Threshold Voltage Control Mrs Proceedings. 765. DOI: 10.1557/Proc-765-D1.4 |
0.329 |
|
| 2003 |
Kang AY, Lenahan PM, Conley JF. Electron spin resonance observation of trapped electron centers in atomic-layer-deposited hafnium oxide on Si Applied Physics Letters. 83: 3407-3409. DOI: 10.1063/1.1621078 |
0.622 |
|
| 2003 |
He W, Solanki R, Conley JF, Ono Y. Pulsed deposition of silicate films Journal of Applied Physics. 94: 3657-3659. DOI: 10.1063/1.1599976 |
0.409 |
|
| 2003 |
Conley JF, Ono Y, Solanki R, Stecker G, Zhuang W. Electrical properties of HfO2 deposited via atomic layer deposition using Hf(NO3)4 and H2O Applied Physics Letters. 82: 3508-3510. DOI: 10.1063/1.1575934 |
0.442 |
|
| 2003 |
Conley JF, Ono Y, Tweet DJ, Zhuang W, Solanki R. Atomic layer deposition of thin hafnium oxide films using a carbon free precursor Journal of Applied Physics. 93: 712-718. DOI: 10.1063/1.1528306 |
0.391 |
|
| 2003 |
Vandooren A, Cristoloveanu S, Conley JF, Mojarradi M, Kolawa E. A systematic investigation of the degradation mechanisms in SOI n-channel LD-MOSFETs Solid-State Electronics. 47: 1419-1427. DOI: 10.1016/S0038-1101(03)00101-1 |
0.331 |
|
| 2002 |
Conley JF, Ono Y, Tweet DJ, Zhuang W, Solanki R. Atomic Layer Chemical Vapor Deposition of Hafnium Oxide Using Anhydrous Hafnium Nitrate Precursor Mrs Proceedings. 716. DOI: 10.1557/Proc-716-B2.2 |
0.386 |
|
| 2002 |
Conley JF, Ono Y, Zhuang W, Tweet DJ, Gao W, Mohammed SK, Solanki R. Atomic layer deposition of hafnium oxide using anhydrous hafnium nitrate Electrochemical and Solid State Letters. 5. DOI: 10.1149/1.1462875 |
0.414 |
|
| 2002 |
Kang AY, Lenahan PM, Conley JF. The radiation response of the high dielectric-constant hafnium oxide/silicon system Ieee Transactions On Nuclear Science. 49: 2636-2642. DOI: 10.1109/Tns.2002.805334 |
0.602 |
|
| 2002 |
Kang AY, Lenahan PM, Conley JF. Reliability concerns for HfO2/Si devices: Interface and dielectric traps Ieee International Integrated Reliability Workshop Final Report. 2002: 102-107. DOI: 10.1109/IRWS.2002.1194243 |
0.612 |
|
| 2002 |
Kang AY, Lenahan PM, Conley JF, Solanki R. Electron spin resonance study of interface defects in atomic layer deposited hafnium oxide on Si Applied Physics Letters. 81: 1128-1130. DOI: 10.1063/1.1494123 |
0.641 |
|
| 2002 |
Suehle JS, Vogel EM, Roitman P, Conley JF, Johnston AH, Wang B, Bernstein JB, Weintraub CE. Observation of latent reliability degradation in ultrathin oxides after heavy-ion irradiation Applied Physics Letters. 80: 1282-1284. DOI: 10.1063/1.1448859 |
0.341 |
|
| 2001 |
Conley J, Suehle J, Johnston A, Wang B, Miyahara T, Vogel E, Bernstein J. Heavy-ion-induced soft breakdown of thin gate oxides Ieee Transactions On Nuclear Science. 48: 1913-1916. DOI: 10.1109/23.983150 |
0.323 |
|
| 1999 |
Lenahan PM, Mele JJ, Conley JF, Lowry RK, Woodbury D. Predicting radiation response from process parameters: Verification of a physically based predictive model Ieee Transactions On Nuclear Science. 46: 1534-1543. DOI: 10.1109/23.819118 |
0.334 |
|
| 1998 |
Lenahan PM, Conley JF. What can electron paramagnetic resonance tell us about the Si/SiO2 system? Journal of Vacuum Science & Technology B. 16: 2134-2153. DOI: 10.1116/1.590301 |
0.351 |
|
| 1998 |
Conley JF, Lenahan PM, McArthur WF. Preliminary investigation of the kinetics of postoxidation rapid thermal anneal induced hole-trap-precursor formation in microelectronic SiO2 films Applied Physics Letters. 73: 2188-2190. DOI: 10.1063/1.122418 |
0.577 |
|
| 1997 |
Conley J, Lenahan P, Wallace B, Cole P. Quantitative model of radiation induced charge trapping in SiO/sub 2/ Ieee Transactions On Nuclear Science. 44: 1804-1809. DOI: 10.1109/23.658946 |
0.571 |
|
| 1997 |
Lenahan PM, Conley JF, Wallace BD. A model of hole trapping in SiO2 films on silicon Journal of Applied Physics. 81: 6822-6824. DOI: 10.1063/1.365438 |
0.427 |
|
| 1997 |
Lenahan PM, Conley JF. A physically based predictive model of Si/SiO2 interface trap generation resulting from the presence of holes in the SiO2 Applied Physics Letters. 71: 3126-3128. DOI: 10.1063/1.120284 |
0.404 |
|
| 1997 |
Lenahan PM, Conley JF, Wallace BD. A model of hole trapping in SiO2 films on silicon Journal of Applied Physics. 81: 6822-6824. |
0.547 |
|
| 1996 |
Conley JF. Application of Electron Spin Resonance as a Tool for Building In Reliability (BIR) Mrs Proceedings. 428. DOI: 10.1557/Proc-428-293 |
0.334 |
|
| 1996 |
Conley JF, Lenahan PM, Wallace BD. Electron spin resonance characterization of trapping centers in Unibond buried oxides Ieee Transactions On Nuclear Science. 43: 2635-2638. DOI: 10.1109/23.556846 |
0.445 |
|
| 1996 |
Conley JF, Lenahan PM, Wallace BD. Electron spin resonance characterization of trapping centers in unibond® buried oxides Ieee Transactions On Nuclear Science. 43: 2635-2638. |
0.553 |
|
| 1995 |
Conley JF, Lenahan PM. Electron spin resonance evidence for a localized EP (E′δ-like) defect structure Materials Research Society Symposium - Proceedings. 378: 377-380. DOI: 10.1557/Proc-378-377 |
0.567 |
|
| 1995 |
Conley JF, Lenahan PM, Lelis AJ, Oldham TR. Electron Spin Resonance Evidence that E'γ Centers Can Behave as Switching Oxide Traps Ieee Transactions On Nuclear Science. 42: 1744-1749. DOI: 10.1109/23.488774 |
0.622 |
|
| 1995 |
Conley JF, Lenahan PM. Electron Spin Resonance Analysis of EP Center Interactions With H2: Evidence for a Localized EP Center Structure Ieee Transactions On Nuclear Science. 42: 1740-1743. DOI: 10.1109/23.488773 |
0.556 |
|
| 1995 |
Conley JF, Lenahan PM, Lelis AJ, Oldham TR. Electron spin resonance evidence for the structure of a switching oxide trap: Long term structural change at silicon dangling bond sites in SiO2 Applied Physics Letters. 67: 2179-2181. DOI: 10.1063/1.115095 |
0.455 |
|
| 1995 |
Conley JF, Lenahan PM. Hydrogen complexed EP (E′δ) centers and EP H2 interactions: Implications for EP structure Microelectronic Engineering. 28: 35-38. DOI: 10.1016/0167-9317(95)00010-6 |
0.532 |
|
| 1994 |
Conley JF, Lenahan P, Evans H, Lowry R, Morthorst T. The Roles of Several E′ Variants in Thermal Gate Oxide Reliability Mrs Proceedings. 338. DOI: 10.1557/Proc-338-37 |
0.637 |
|
| 1994 |
Conley JF, Lenahan PM, Evans HL, Lowry RK, Morthorst TJ. Observation and electronic characterization of "new" E′ center defects in technologically relevant thermal SiO2 on Si: An additional complexity in oxide charge trapping Journal of Applied Physics. 76: 2872-2880. DOI: 10.1063/1.358428 |
0.601 |
|
| 1994 |
Conley JF, Lenahan PM, Evans HL, Lowry RK, Morthorst TJ. Electron-spin-resonance evidence for an impurity-related E'-like hole trapping defect in thermally grown SiO2 on Si Journal of Applied Physics. 76: 8186-8188. DOI: 10.1063/1.357871 |
0.627 |
|
| 1994 |
Conley JF, Lenahan PM, Evans HL, Lowry RK, Morthorst TJ. Observation and electronic characterization of two E' center charge traps in conventionally processed thermal SiO2 on Si Applied Physics Letters. 65: 2281-2283. DOI: 10.1063/1.112718 |
0.62 |
|
| 1993 |
Conley JF, Lenahan PM. Molecular Hydrogen, E’ Center Hole Traps, and Radiation Induced Interface Traps in MOS Devices Ieee Transactions On Nuclear Science. 40: 1335-1340. DOI: 10.1109/23.273534 |
0.628 |
|
| 1993 |
Conley JF, Lenahan PM. Room temperature reactions involving silicon dangling bond centers and molecular hydrogen in amorphous SiO2 thin films on silicon Applied Physics Letters. 62: 40-42. DOI: 10.1063/1.108812 |
0.604 |
|
| 1993 |
Conley JF, Lenahan PM. Radiation induced interface states and ESR evidence for room temperature interactions between molecular hydrogen and silicon dangling bonds in amorphous SiO2 Films on Si Microelectronic Engineering. 22: 215-218. DOI: 10.1016/0167-9317(93)90160-7 |
0.608 |
|
| 1992 |
Conley JF, Lenahan PM. Room temperature reactions involving silicon dangling bond centers and molecular hydrogen in amorphous SiO2 thin films on silicon Ieee Transactions On Nuclear Science. 39: 2186-2191. DOI: 10.1109/23.211420 |
0.605 |
|
| 1992 |
Conley JF, Lenahan PM, Roitman P. Evidence for a Deep Electron Trap and Charge Compensation in Separation by Implanted Oxygen Oxides Ieee Transactions On Nuclear Science. 39: 2114-2120. DOI: 10.1109/23.211410 |
0.591 |
|
| 1992 |
Conley JF, Lenahan PM, Roitman P. Electron spin resonance of separation by implanted oxygen oxides: Evidence for structural change and a deep electron trap Applied Physics Letters. 60: 2889-2891. DOI: 10.1063/1.106809 |
0.589 |
|
| 1991 |
Conley JF, Roitman P, Lenahan PM. Electron spin resonance study of E′ trapping centers in SIMOX buried oxides Ieee Transactions On Nuclear Science. 38: 1247-1252. DOI: 10.1109/23.124100 |
0.607 |
|
| Low-probability matches (unlikely to be authored by this person) |
| 2011 |
Mason AD, Huang CC, Koesdjojo MT, Stephon ND, Remcho VT, Conley JF. Functionalization and environmental stabilization of ZnO nanobridge sensors fabricated using carbonized photoresist Materials Research Society Symposium Proceedings. 1350: 93-98. DOI: 10.1557/Opl.2011.1334 |
0.297 |
|
| 2011 |
Cowell EW, Alimardani N, Knutson CC, Conley JF, Keszler DA, Gibbons BJ, Wager JF. Advancing MIM electronics: amorphous metal electrodes. Advanced Materials (Deerfield Beach, Fla.). 23: 74-8. PMID 20976677 DOI: 10.1002/Adma.201002678 |
0.288 |
|
| 2011 |
Mason AD, Huang CC, Kondo S, Koesdjojo MT, Tennico YH, Remcho VT, Conley JF. Synthesis, functionalization, and environmental stabilization of ZnO nanobridge transducers for gas and liquid-phase sensing Sensors and Actuators, B: Chemical. 155: 245-252. DOI: 10.1016/J.Snb.2010.11.061 |
0.287 |
|
| 2006 |
Green J, Gutu T, Dong L, Jiao J, Conley J, Ono Y. Electron Microscopy Characterization of Al2O3 and ZnO Coated Carbon Nanotubes Microscopy and Microanalysis. 12: 676-677. DOI: 10.1017/S1431927606067018 |
0.285 |
|
| 2012 |
Huang CC, Mason AD, Conley JF, Heist C, Koesdjojo MT, Remcho VT, Afentakis T. Impact of parylene-A encapsulation on ZnO nanobridge sensors and sensitivity enhancement via continuous ultraviolet illumination Journal of Electronic Materials. 41: 873-880. DOI: 10.1007/S11664-011-1867-7 |
0.284 |
|
| 2014 |
Lampert L, Timonen B, Smith S, Davidge B, Li H, Conley JF, Singer JD, Jiao J. Amorphous alumina nanowire array efficiently delivers Ac-DEVD-CHO to inhibit apoptosis of dendritic cells. Chemical Communications (Cambridge, England). 50: 1234-7. PMID 24336780 DOI: 10.1039/C3Cc48088G |
0.283 |
|
| 1998 |
Lenahan PM, Conley JF. Response to “Comment on ‘A model of hole trapping in SiO2 films on silicon’ ” [J. Appl. Phys. 83, 5591 (1998)] Journal of Applied Physics. 83: 5593-5594. DOI: 10.1063/1.367499 |
0.279 |
|
| 2002 |
Zhuang W, Conley JF, Ono Y, Evans DR, Solanki R. Hafnium Nitrate Precursor Synthesis and HfO 2 Thin Film Deposition Integrated Ferroelectrics. 48: 3-12. DOI: 10.1080/10584580215449 |
0.279 |
|
| 2013 |
Alimardani N, Conley JF. Step tunneling enhanced asymmetry in asymmetric electrode metal-insulator-insulator-metal tunnel diodes Applied Physics Letters. 102: 143501. DOI: 10.1063/1.4799964 |
0.276 |
|
| 2004 |
Conley JF, Tweet DJ, Ono Y, Stecker G. Interval Annealing During Alternating Pulse Deposition Mrs Proceedings. 811. DOI: 10.1557/Proc-811-D1.3 |
0.276 |
|
| 2018 |
Perkins CK, Jenkins M, Chiang TH, Mansergh RH, Gouliouk V, Kenane N, Wager J, Conley JF, Keszler DA. Demonstration of Fowler-Nordheim tunneling in simple solution-processed thin film. Acs Applied Materials & Interfaces. PMID 30259732 DOI: 10.1021/Acsami.8B08986 |
0.273 |
|
| 2017 |
Austin DZ, Jenkins MA, Allman D, Hose S, Price D, Dezelah CL, Conley JF. Atomic Layer Deposition of Ruthenium and Ruthenium Oxide Using a Zero-Oxidation State Precursor Chemistry of Materials. 29: 1107-1115. DOI: 10.1021/Acs.Chemmater.6B04251 |
0.266 |
|
| 2001 |
Vandooren A, Conley JF, Cristoloveanu S, Mojarradi M, Kolawa E. Degradation mechanisms in SOI n-channel LDMOSFETs Microelectronic Engineering. 59: 489-495. DOI: 10.1016/S0167-9317(01)00663-3 |
0.263 |
|
| 2015 |
Du X, Durgan CJ, Matthews DJ, Motley JR, Tan X, Pholsena K, Árnadóttir L, Castle JR, Jacobs PG, Cargill RS, Ward WK, Conley JF, Herman GS. Fabrication of a Flexible Amperometric Glucose Sensor Using Additive Processes. Ecs Journal of Solid State Science and Technology : Jss. 4: P3069-P3074. PMID 26634186 DOI: 10.1149/2.0101504Jss |
0.262 |
|
| 2018 |
Austin DZ, Jenkins MA, Allman D, Hose S, Price D, Dezelah CL, Conley JF. Correction to Atomic Layer Deposition of Ruthenium and Ruthenium Oxide Using a Zero Oxidation State Precursor Chemistry of Materials. 30: 8983-8984. DOI: 10.1021/Acs.Chemmater.8B04816 |
0.252 |
|
| 2018 |
Holden KEK, Jenkins MA, Conley JF. Characterization of Atomic Layer Deposited Cobalt Oxide Ecs Transactions. 85: 735-741. DOI: 10.1149/08513.0735ECST |
0.252 |
|
| 2005 |
Dong L, Chirayos V, Bush J, Jiao J, Dubin VM, Chebian RV, Ono Y, Conley JF, Ulrich BD. Floating-potential dielectrophoresis-controlled fabrication of single-carbon-nanotube transistors and their electrical properties. The Journal of Physical Chemistry. B. 109: 13148-53. PMID 16852637 DOI: 10.1021/Jp051803H |
0.246 |
|
| 2023 |
Hsu WC, Nujhat N, Kupp B, Conley JF, Wang AX. On-chip wavelength division multiplexing filters using extremely efficient gate-driven silicon microring resonator array. Scientific Reports. 13: 5269. PMID 37002281 DOI: 10.1038/s41598-023-32313-0 |
0.239 |
|
| 2017 |
Aier SC, Meduri K, Newman M, Ekeya R, Crawford P, Austin D, Lampert L, Conley JF, Lind E, Jiao J. Effect of Tip Morphology of Vertically Aligned Alumina Nanowire Arrays on Ovalbumin Uptake of Dendritic Cells Microscopy and Microanalysis. 23: 1292-1293. DOI: 10.1017/S1431927617007127 |
0.231 |
|
| 2017 |
Willmering MM, Ma ZL, Jenkins MA, Conley JF, Hayes SE. Enhanced NMR with Optical Pumping (OPNMR) Yields (75)As Signals Selectively from a Buried GaAs Interface. Journal of the American Chemical Society. PMID 28256125 DOI: 10.1021/jacs.6b08970 |
0.225 |
|
| 2024 |
Hsu WC, Nujhat N, Kupp B, Conley JF, Rong H, Kumar R, Wang AX. Sub-volt high-speed silicon MOSCAP microring modulator driven by high-mobility conductive oxide. Nature Communications. 15: 826. PMID 38280874 DOI: 10.1038/s41467-024-45130-4 |
0.221 |
|
| 2006 |
Conley JF, Chen Y, Knowlton B, Sullivan T, Tonti B. Introduction to the Special Issue on the 2005 International Integrated Reliability Workshop Ieee Transactions On Device and Materials Reliability. 6: 115-116. DOI: 10.1109/Tdmr.2006.877374 |
0.217 |
|
| 2005 |
Conley J, McClain D, Jiao J, Gao W, Evans D, Ono Y. Characterization of Nanocones Grown During DC Magnetron Sputtering of an ITO Target Mrs Proceedings. 879. DOI: 10.1557/PROC-879-Z3.37 |
0.212 |
|
| 2018 |
Jenkins MA, Klarr T, Austin DZ, Li W, Nguyen NV, Conley JF. Assessment of Energy Barriers Between ZrCuAlNi Amorphous Metal and Atomic Layer Deposition Insulators Using Internal Photoemission Spectroscopy Physica Status Solidi (Rrl) - Rapid Research Letters. 12: 1700437. DOI: 10.1002/PSSR.201700437 |
0.206 |
|
| 2018 |
Hayes MH, Dezelah CL, Conley JF. Properties of Annealed Atomic-Layer-Deposited Ruthenium from Ru(DMBD)(CO)3and Oxygen Ecs Transactions. 85: 743-749. DOI: 10.1149/08513.0743ECST |
0.205 |
|
| 2006 |
Conley JF, Stecker L, Ono Y. Selective growth and directed integration of ZnO nanobridge devices on si substrates without a metal catalyst using a ZnO seed layer Journal of Electronic Materials. 35: 795-802. DOI: 10.1007/S11664-006-0139-4 |
0.205 |
|
| 2021 |
Jenkins MA, Holden KEK, Smith SW, Brumbach MT, Henry MD, Weiland C, Woicik JC, Jaszewski ST, Ihlefeld JF, Conley JF. Determination of Hafnium Zirconium Oxide Interfacial Band Alignments Using Internal Photoemission Spectroscopy and X-ray Photoelectron Spectroscopy. Acs Applied Materials & Interfaces. PMID 33749229 DOI: 10.1021/acsami.0c17729 |
0.203 |
|
| 2009 |
Smith SW, McAuliffe KG, Conley JF. Atomic layer deposited Al2O3/Ta2O 5 nanolaminate capacitors 2009 International Semiconductor Device Research Symposium, Isdrs '09. DOI: 10.1109/ISDRS.2009.5378151 |
0.198 |
|
| 2010 |
Alimardani N, Conley JF, Cowell EW, Wager JF, Chin M, Kilpatrick S, Dubey M. Stability and bias stressing of metal/insulator/metal diodes Ieee International Integrated Reliability Workshop Final Report. 80-84. DOI: 10.1109/IIRW.2010.5706491 |
0.193 |
|
| 2019 |
Jenkins MA, McGlone JM, Wager JF, Conley JF. Internal photoemission spectroscopy determination of barrier heights between Ta-based amorphous metals and atomic layer deposited insulators Journal of Applied Physics. 125: 55301. DOI: 10.1063/1.5066569 |
0.178 |
|
| 1978 |
Lind EA, Erickson BE, Conley J, O'Barr WM. Social attributions and conversation style in trial testimony Journal of Personality and Social Psychology. 36: 1558-1567. DOI: 10.1037/0022-3514.36.12.1558 |
0.174 |
|
| 2010 |
Smith SW, McAuliffe KG, Conley JF. Atomic layer deposited high-k nanolaminate capacitors Solid-State Electronics. 54: 1076-1082. DOI: 10.1016/j.sse.2010.05.007 |
0.17 |
|
| 2017 |
Fulton BL, Perkins CK, Mansergh RH, Jenkins MA, Gouliouk V, Jackson MN, Ramos JC, Rogovoy NM, Gutierrez-Higgins MT, Boettcher SW, Conley JF, Keszler DA, Hutchison JE, Johnson DW. Minerals to Materials: Bulk Synthesis of Aqueous Aluminum Clusters and Their Use as Precursors for Metal Oxide Thin Films Chemistry of Materials. 29: 7760-7765. DOI: 10.1021/Acs.Chemmater.7B02106 |
0.158 |
|
| 2011 |
Murali S, Rajachidambaram JS, Han SY, Chang CH, Herman GS, Conley JF. Bipolar resistive switching of zinc-tin-oxide resistive random access memory Proceedings of the Ieee Conference On Nanotechnology. 740-743. DOI: 10.1109/NANO.2011.6144646 |
0.145 |
|
| 2011 |
Murali S, Prasertpalichat S, Huang CC, Cann D, Yimnirun R, Conley JF. Conductivity measurement of ZnO nanowires using the powder-solution- composite technique Journal of the Electrochemical Society. 158: G211-G216. DOI: 10.1149/1.3615844 |
0.141 |
|
| 2018 |
Jenkins MA, Klarr T, McGlone JM, Wager JF, Conley JF. Internal Photoemission Spectroscopy Measurements of the Energy Barrier Heights between ALD SiO2and Ta-Based Amorphous Metals Ecs Transactions. 85: 729-734. DOI: 10.1149/08513.0729ECST |
0.124 |
|
| 2010 |
Pelatt B, Huang C, Conley J. ZnO nanobridge devices fabricated using carbonized photoresist Solid-State Electronics. 54: 1143-1149. DOI: 10.1016/J.SSE.2010.05.031 |
0.121 |
|
| 2009 |
Mason AD, Roberts TF, Conley JF, Price DT, Allman DDJ, McGuire MS. Investigation of growth parameter influence on hydrothermally grown ZnO nanowires using a research grade microwave 2009 International Semiconductor Device Research Symposium, Isdrs '09. DOI: 10.1109/ISDRS.2009.5378342 |
0.087 |
|
| 2015 |
Du X, Durgan CJ, Matthews DJ, Motley JR, Tan X, Pholsena K, Árnadoóttir L, Castle JR, Jacobs PG, Cargill RS, Ward WK, Conley JF, Herman GS. Fabrication of a flexible amperometric glucose sensor using additive processes Ecs Journal of Solid State Science and Technology. 4: P3069-P3074. DOI: 10.1149/2.0101504jss |
0.053 |
|
| 2020 |
Ghione G, Xu N, Kuroda R, Alam SM, Narayanan P, Thadesar PA, Phillips J, Conley JF, Park J, Graham S, Letizia R. Fabrication of Microsensor for Detection of Low-Concentration Formaldehyde Gas in Formalin-Treated Fish Ieee Transactions On Electron Devices. 67: 5257-5261. DOI: 10.1109/ted.2020.3032222 |
0.048 |
|
| 2005 |
Hamilton MG, Hill I, Conley J, Sawyer TW, Caneva DC, Lundy PM. Clinical aspects of percutaneous poisoning by the chemical warfare agent VX: effects of application site and decontamination. Military Medicine. 169: 856-62. PMID 15605929 DOI: 10.7205/milmed.169.11.856 |
0.038 |
|
| 2020 |
Ledford AK, Dixon D, Luning CR, Martin BJ, Miles PC, Beckner M, Bennett D, Conley J, Nindl BC. Psychological and Physiological Predictors of Resilience in Navy SEAL Training. Behavioral Medicine (Washington, D.C.). 46: 290-301. PMID 32787719 DOI: 10.1080/08964289.2020.1712648 |
0.029 |
|
| 2004 |
Wong JP, Yang H, Blasetti KL, Schnell G, Conley J, Schofield LN. Liposome delivery of ciprofloxacin against intracellular Francisella tularensis infection. Journal of Controlled Release : Official Journal of the Controlled Release Society. 92: 265-73. PMID 14568408 DOI: 10.1016/s0168-3659(03)00358-4 |
0.02 |
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