| Year |
Citation |
Score |
| 2016 |
Schall D, Mohsin M, Sagade AA, Otto M, Chmielak B, Suckow S, Giesecke AL, Neumaier D, Kurz H. Infrared transparent graphene heater for silicon photonic integrated circuits. Optics Express. 24: 7871-8. PMID 27137229 DOI: 10.1364/Oe.24.007871 |
0.33 |
|
| 2014 |
Plötzing T, Winzer T, Malic E, Neumaier D, Knorr A, Kurz H. Experimental verification of carrier multiplication in graphene. Nano Letters. 14: 5371-5375. PMID 25144320 DOI: 10.1021/Nl502114W |
0.333 |
|
| 2014 |
Mohsin M, Schall D, Otto M, Noculak A, Neumaier D, Kurz H. Graphene based low insertion loss electro-absorption modulator on SOI waveguide. Optics Express. 22: 15292-7. PMID 24977619 DOI: 10.1364/Oe.22.015292 |
0.314 |
|
| 2014 |
Matheisen C, Waldow M, Chmielak B, Sawallich S, Wahlbrink T, Bolten J, Nagel M, Kurz H. Electro-optic light modulation and THz generation in locally plasma-activated silicon nanophotonic devices. Optics Express. 22: 5252-9. PMID 24663865 DOI: 10.1364/Oe.22.005252 |
0.354 |
|
| 2014 |
Schall D, Neumaier D, Mohsin M, Chmielak B, Bolten J, Porschatis C, Prinzen A, Matheisen C, Kuebart W, Junginger B, Templ W, Giesecke AL, Kurz H. 50 GBit/s Photodetectors Based on Wafer-Scale Graphene for Integrated Silicon Photonic Communication Systems Acs Photonics. 1: 781-784. DOI: 10.1021/Ph5001605 |
0.33 |
|
| 2014 |
Prinzen A, Bolten J, Waldow M, Kurz H. Study on fabrication tolerances of SOI based directional couplers and ring resonators Microelectronic Engineering. 121: 51-54. DOI: 10.1016/J.Mee.2014.03.019 |
0.31 |
|
| 2014 |
Bolten J, Manecke C, Wahlbrink T, Waldow M, Kurz H. At low costs: Study on optical propagation losses of silicon waveguides fabricated by electron beam lithography Microelectronic Engineering. 123: 1-3. DOI: 10.1016/J.Mee.2014.03.009 |
0.306 |
|
| 2013 |
Chmielak B, Matheisen C, Ripperda C, Bolten J, Wahlbrink T, Waldow M, Kurz H. Investigation of local strain distribution and linear electro-optic effect in strained silicon waveguides. Optics Express. 21: 25324-32. PMID 24150373 DOI: 10.1364/Oe.21.025324 |
0.303 |
|
| 2013 |
Leuthold J, Koos C, Freude W, Alloatti L, Palmer R, Korn D, Pfeifle J, Lauermann M, Dinu R, Wehrli S, Jazbinsek M, Günter P, Waldow M, Wahlbrink T, Bolten J, ... Kurz H, et al. Silicon-Organic hybrid electro-optical devices Ieee Journal On Selected Topics in Quantum Electronics. 19. DOI: 10.1109/Jstqe.2013.2271846 |
0.332 |
|
| 2013 |
Khandelwal R, Plachetka U, Min B, Moormann C, Kurz H. A comparative study based on optical and electrical performance of micro- and nano-textured surfaces for silicon solar cells Microelectronic Engineering. 111: 220-223. DOI: 10.1016/J.Mee.2013.03.162 |
0.326 |
|
| 2013 |
Kim JW, Plachetka U, Moormann C, Kurz H. Fabrication of inverse micro/nano pyramid structures using soft UV-NIL and wet chemical methods for residual layer removal and Si-etching Microelectronic Engineering. 110: 403-407. DOI: 10.1016/J.Mee.2013.02.098 |
0.317 |
|
| 2013 |
Plachetka U, Kim JW, Khandelwal R, Windgassen H, Moormann C, Kurz H. Tailored etching processes for UV-NIL resist material for Si-antireflective surfaces Microelectronic Engineering. 110: 361-364. DOI: 10.1016/J.Mee.2013.02.063 |
0.34 |
|
| 2012 |
Safiei A, Derix R, Suckow S, Koch H, Breuer U, Pletzer TM, Wolter K, Kurz H. SiliconPV 2012 generation of defect-related acceptor states by laser doping Solar Energy Materials and Solar Cells. 106: 2-6. DOI: 10.1016/J.Solmat.2012.06.045 |
0.317 |
|
| 2012 |
Koo N, Schmidt M, Mollenhauer T, Moormann C, Schlachter F, Kurz H. Fabrication of MOSFETs by 3D soft UV-nanoimprint Microelectronic Engineering. 97: 85-88. DOI: 10.1016/J.Mee.2012.05.015 |
0.337 |
|
| 2012 |
Safiei A, Windgassen H, Wolter K, Kurz H. Emitter Profile Tailoring to Contact Homogeneous High Sheet Resistance Emitter Energy Procedia. 27: 432-437. DOI: 10.1016/J.Egypro.2012.07.089 |
0.344 |
|
| 2011 |
Chmielak B, Waldow M, Matheisen C, Ripperda C, Bolten J, Wahlbrink T, Nagel M, Merget F, Kurz H. Pockels effect based fully integrated, strained silicon electro-optic modulator. Optics Express. 19: 17212-9. PMID 21935084 DOI: 10.1364/Oe.19.017212 |
0.344 |
|
| 2011 |
Nagel M, Michalski A, Botzem T, Kurz H. Near-field investigation of THz surface-wave emission from optically excited graphite flakes. Optics Express. 19: 4667-4672. PMID 21369298 DOI: 10.1364/Oe.19.004667 |
0.358 |
|
| 2011 |
Pletzer TM, Stegemann EFR, Windgassen H, Suckow S, Bätzner DL, Kurz H. Gettering in multicrystalline silicon wafers with screen‐printed emitters Progress in Photovoltaics. 19: 946-953. DOI: 10.1002/Pip.1099 |
0.301 |
|
| 2010 |
Schönenberger S, Stöferle T, Moll N, Mahrt RF, Dahlem MS, Wahlbrink T, Bolten J, Mollenhauer T, Kurz H, Offrein BJ. Ultrafast all-optical modulator with femtojoule absorbed switching energy in silicon-on-insulator. Optics Express. 18: 22485-96. PMID 20941147 DOI: 10.1364/Oe.18.022485 |
0.363 |
|
| 2010 |
Kray S, Spöler F, Hellerer T, Kurz H. Electronically controlled coherent linear optical sampling for optical coherence tomography. Optics Express. 18: 9976-90. PMID 20588852 DOI: 10.1364/Oe.18.009976 |
0.334 |
|
| 2010 |
Wächter M, Matheisen C, Waldow M, Wahlbrink T, Bolten J, Nagel M, Kurz H. Optical generation of terahertz and second-harmonic light in plasma-activated silicon nanophotonic structures Applied Physics Letters. 97: 161107. DOI: 10.1063/1.3503586 |
0.351 |
|
| 2010 |
Szafranek BN, Schall D, Otto M, Neumaier D, Kurz H. Electrical observation of a tunable band gap in bilayer graphene nanoribbons at room temperature Applied Physics Letters. 96: 112103. DOI: 10.1063/1.3364139 |
0.301 |
|
| 2010 |
Berghoff B, Suckow S, Rölver R, Spangenberg B, Kurz H, Sologubenko A, Mayer J. Quantum wells based on Si/SiOx stacks for nanostructured absorbers Solar Energy Materials and Solar Cells. 94: 1893-1896. DOI: 10.1016/J.Solmat.2010.06.033 |
0.314 |
|
| 2010 |
Suckow S, Berghoff B, Kurz H. Geometric broadening in resonant tunneling through Si quantum dots Energy Procedia. 2: 207-212. DOI: 10.1016/J.Egypro.2010.07.030 |
0.304 |
|
| 2009 |
Lemme MC, Gottlob HDB, Echtermeyer TJ, Schmidt M, Kurz H, Endres R, Schwalke U, Czernohorkky M, Tetzlaff D, Osten HJ. Complementary metal oxide semiconductor integration of epitaxial Gd2O3 Journal of Vacuum Science & Technology B. 27: 258-261. DOI: 10.1116/1.3054350 |
0.3 |
|
| 2009 |
Gottlob HDB, Stefani A, Schmidt M, Lemme MC, Kurz H, Mitrovic IZ, Werner M, Davey WM, Hall S, Chalker PR, Cherkaoui K, Hurley PK, Piscator J, Engström O, Newcomb SB. Gd silicate: A high-k dielectric compatible with high temperature annealing Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 27: 249-252. DOI: 10.1116/1.3025904 |
0.325 |
|
| 2009 |
Berghoff B, Suckow S, Rölver R, Spangenberg B, Kurz H, Sologubenko A, Mayer J. Improved charge transport through Si based multiple quantum wells with substoichiometric SiOx barrier layers Journal of Applied Physics. 106. DOI: 10.1063/1.3238294 |
0.32 |
|
| 2009 |
Wächter M, Nagel M, Kurz H. Tapered photoconductive terahertz field probe tip with subwavelength spatial resolution Applied Physics Letters. 95: 41112. DOI: 10.1063/1.3189702 |
0.344 |
|
| 2009 |
Awad M, Nagel M, Kurz H. Tapered Sommerfeld wire terahertz near-field imaging Applied Physics Letters. 94: 51107. DOI: 10.1063/1.3078278 |
0.316 |
|
| 2009 |
Schmidt M, Lemme MC, Gottlob HDB, Driussi F, Selmi L, Kurz H. Mobility extraction in SOI MOSFETs with sub 1 nm body thickness Solid-State Electronics. 53: 1246-1251. DOI: 10.1016/J.Sse.2009.09.017 |
0.341 |
|
| 2009 |
Gottlob HDB, Schmidt M, Stefani A, Lemme MC, Kurz H, Mitrovic IZ, Davey WM, Hall S, Werner M, Chalker PR, Cherkaoui K, Hurley PK, Piscator J, Engström O, Newcomb SB. Scaling potential and MOSFET integration of thermally stable Gd silicate dielectrics Microelectronic Engineering. 86: 1642-1645. DOI: 10.1016/J.Mee.2009.03.084 |
0.317 |
|
| 2009 |
Wahlbrink T, Tsai WS, Waldow M, Först M, Bolten J, Mollenhauer T, Kurz H. Fabrication of high efficiency SOI taper structures Microelectronic Engineering. 86: 1117-1119. DOI: 10.1016/J.Mee.2009.01.047 |
0.309 |
|
| 2008 |
Awad M, Nagel M, Kurz H. Negative-index metamaterial with polymer-embedded wire-pair structures at terahertz frequencies. Optics Letters. 33: 2683-5. PMID 19015708 DOI: 10.1364/Ol.33.002683 |
0.32 |
|
| 2008 |
Kray S, Spöler F, Först M, Kurz H. Dual femtosecond laser multiheterodyne optical coherence tomography. Optics Letters. 33: 2092-4. PMID 18794941 DOI: 10.1364/Ol.33.002092 |
0.318 |
|
| 2008 |
Waldow M, Plötzing T, Gottheil M, Först M, Bolten J, Wahlbrink T, Kurz H. 25ps all-optical switching in oxygen implanted silicon-on-insulator microring resonator. Optics Express. 16: 7693-702. PMID 18545478 DOI: 10.1364/Oe.16.007693 |
0.306 |
|
| 2008 |
Gottlob HDB, Echtermeyer TJ, Schmidt M, Mollenhauer T, Wahlbrink T, Lemme MC, Kurz H. Leakage Current Mechanisms in Epitaxial Gd2O3 High-k Gate Dielectrics Electrochemical and Solid State Letters. 11. DOI: 10.1149/1.2828201 |
0.319 |
|
| 2008 |
Plachetka U, Koo N, Wahlbrink T, Bolten J, Waldow M, Plotzing T, Forst M, Kurz H. Fabrication of Photonic Ring Resonator Device in Silicon Waveguide Technology Using Soft UV-Nanoimprint Lithography Ieee Photonics Technology Letters. 20: 490-492. DOI: 10.1109/Lpt.2008.918386 |
0.314 |
|
| 2008 |
Czernohorsky M, Tetzlaff D, Bugiel E, Dargis R, Osten HJ, Gottlob HDB, Schmidt M, Lemme MC, Kurz H. Stability of crystalline Gd(2)O(3) thin films on silicon during rapid thermal annealing Semiconductor Science and Technology. 23: 35010. DOI: 10.1088/0268-1242/23/3/035010 |
0.311 |
|
| 2008 |
Berghoff B, Suckow S, Rölver R, Spangenberg B, Kurz H, Dimyati A, Mayer J. Resonant and phonon-assisted tunneling transport through silicon quantum dots embedded in SiO2 Applied Physics Letters. 93. DOI: 10.1063/1.2992057 |
0.31 |
|
| 2008 |
Rölver R, Berghoff B, Bätzner DL, Spangenberg B, Kurz H. Lateral Si/SiO2 quantum well solar cells Applied Physics Letters. 92. DOI: 10.1063/1.2936308 |
0.317 |
|
| 2008 |
Wächter M, Nagel M, Kurz H. Low-loss terahertz transmission through curved metallic slit waveguides fabricated by spark erosion Applied Physics Letters. 92: 161102. DOI: 10.1063/1.2913006 |
0.327 |
|
| 2008 |
Rölver R, Berghoff B, Bätzner D, Spangenberg B, Kurz H, Schmidt M, Stegemann B. Si/SiO2 multiple quantum wells for all silicon tandem cells: Conductivity and photocurrent measurements Thin Solid Films. 516: 6763-6766. DOI: 10.1016/J.Tsf.2007.12.087 |
0.338 |
|
| 2008 |
Gottlob HDB, Lemme MC, Schmidt M, Echtermeyer TJ, Mollenhauer T, Kurz H, Cherkaoui K, Hurley PK, Newcomb SB. Gentle FUSI NiSi metal gate process for high-k dielectric screening Microelectronic Engineering. 85: 2019-2021. DOI: 10.1016/J.Mee.2008.03.016 |
0.302 |
|
| 2008 |
Wahlbrink T, Bolten J, Mollenhauer T, Kurz H, Baumann K, Moll N, Stöferle T, Mahrt RF. Fabrication and characterization of Ta2O5 photonic feedback structures Microelectronic Engineering. 85: 1425-1428. DOI: 10.1016/J.Mee.2008.01.059 |
0.327 |
|
| 2007 |
Spöler F, Kray S, Grychtol P, Hermes B, Bornemann J, Först M, Kurz H. Simultaneous dual-band ultra-high resolution optical coherence tomography. Optics Express. 15: 10832-41. PMID 19547440 DOI: 10.1364/Oe.15.010832 |
0.303 |
|
| 2007 |
Först M, Niehusmann J, Plötzing T, Bolten J, Wahlbrink T, Moormann C, Kurz H. High-speed all-optical switching in ion-implanted silicon-on-insulator microring resonators. Optics Letters. 32: 2046-8. PMID 17632638 DOI: 10.1364/Ol.32.002046 |
0.343 |
|
| 2007 |
Wagner JM, Seino K, Bechstedt F, Dymiati A, Mayer J, Rölver R, Först M, Berghoff B, Spangenberg B, Kurz H. Electronic band gap of Si/SiO2 quantum wells: Comparison of ab initio calculations and photoluminescence measurements Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 25: 1500-1504. DOI: 10.1116/1.2779040 |
0.334 |
|
| 2007 |
Awad M, Nagel M, Kurz H, Herfort J, Ploog K. Characterization of low temperature GaAs antenna array terahertz emitters Applied Physics Letters. 91: 181124. DOI: 10.1063/1.2800885 |
0.344 |
|
| 2007 |
Wächter M, Nagel M, Kurz H. Metallic slit waveguide for dispersion-free low-loss terahertz signal transmission Applied Physics Letters. 90: 61111. DOI: 10.1063/1.2472544 |
0.316 |
|
| 2007 |
Kuttge M, Kurz H, Rivas JG, Sánchez-Gil JA, Bolívar PH. Analysis of the propagation of terahertz surface plasmon polaritons on semiconductor groove gratings Journal of Applied Physics. 101: 23707. DOI: 10.1063/1.2409895 |
0.344 |
|
| 2007 |
Echtermeyer T, Gottlob HDB, Wahlbrink T, Mollenhauer T, Schmidt M, Efavi JK, Lemme MC, Kurz H. Investigation of MOS capacitors and SOI–MOSFETs with epitaxial gadolinium oxide (Gd2O3) and titanium nitride (TiN) electrodes Solid-State Electronics. 51: 617-621. DOI: 10.1016/J.Sse.2007.02.008 |
0.304 |
|
| 2007 |
Turchanikov VI, Nazarov AN, Lysenko VS, Ostahov V, Winkler O, Spangenberg B, Kurz H. Charge accumulation in the dielectric of the nanocluster NVM MOS structures under anti- and unipolar W/E window formation Microelectronics Reliability. 47: 626-630. DOI: 10.1016/J.Microrel.2007.01.075 |
0.304 |
|
| 2007 |
Först M, Nagel M, Awad M, Wächter M, Dekorsy T, Kurz H. Coherent and ultrafast optoelectronics in III–V semiconductor compounds Physica Status Solidi B-Basic Solid State Physics. 244: 2971-2987. DOI: 10.1002/Pssb.200675615 |
0.373 |
|
| 2006 |
Nagel M, Marchewka A, Kurz H. Low-index discontinuity terahertz waveguides. Optics Express. 14: 9944-54. PMID 19529388 DOI: 10.1364/Oe.14.009944 |
0.351 |
|
| 2006 |
Fuchs A, Bender M, Plachetka U, Kock L, Wahlbrink T, Gottlob HDB, Efavi JK, Moeller M, Schmidt M, Mollenhauer T, Moormann C, Lemme MC, Kurz H. Nanowire fin field effect transistors via UV-based nanoimprint lithography Journal of Vacuum Science & Technology B. 24: 2964-2967. DOI: 10.1116/1.2395956 |
0.325 |
|
| 2006 |
Gottlob HDB, Mollenhauer T, Wahlbrink T, Schmidt M, Echtermeyer T, Efavi JK, Lemme MC, Kurz H. Scalable gate first process for silicon on insulator metal oxide semiconductor field effect transistors with epitaxial high-k dielectrics Journal of Vacuum Science & Technology B. 24: 710-714. DOI: 10.1116/1.2180256 |
0.345 |
|
| 2006 |
Rölver R, Först M, Winkler O, Spangenberg B, Kurz H. Influence of excitonic singlet-triplet splitting on the photoluminescence of Si∕SiO2 multiple quantum wells fabricated by remote plasma-enhanced chemical-vapor deposition Journal of Vacuum Science and Technology. 24: 141-145. DOI: 10.1116/1.2141620 |
0.376 |
|
| 2006 |
Rivas JG, Sánchez-Gil JA, Kuttge M, Bolivar PH, Kurz H. Optically switchable mirrors for surface plasmon polaritons propagating on semiconductor surfaces Physical Review B. 74: 245324. DOI: 10.1103/Physrevb.74.245324 |
0.337 |
|
| 2006 |
Liberis J, Matulioniene I, Matulionis A, Lemme MC, Kurz H, Först M. Hot-phonon temperature and lifetime in biased boron-implanted SiO2/Si/SiO2 channels Semiconductor Science and Technology. 21: 803-807. DOI: 10.1088/0268-1242/21/6/017 |
0.343 |
|
| 2006 |
Rivas JG, Kuttge M, Kurz H, Bolivar PH, Sánchez-Gil JA. Low-frequency active surface plasmon optics on semiconductors Applied Physics Letters. 88: 82106. DOI: 10.1063/1.2177348 |
0.342 |
|
| 2006 |
Lemme MC, Efavi JK, Mollenhauer T, Schmidt M, Gottlob HDB, Wahlbrink T, Kurz H. Nanoscale TiN metal gate technology for CMOS integration Microelectronic Engineering. 83: 1551-1554. DOI: 10.1016/J.Mee.2006.01.161 |
0.302 |
|
| 2005 |
Wåchter M, Nagel M, Kurz H. Frequency-dependent characterization of THz Sommerfeld wave propagation on single-wires Optics Express. 13: 10815-10822. PMID 19503299 DOI: 10.1364/Opex.13.010815 |
0.307 |
|
| 2005 |
Gómez Rivas J, Janke C, Bolivar P, Kurz H. Transmission of THz radiation through InSb gratings of subwavelength apertures. Optics Express. 13: 847-59. PMID 19494946 DOI: 10.1364/Opex.13.000847 |
0.322 |
|
| 2005 |
Janke C, Rivas JG, Bolivar PH, Kurz H. All-optical switching of the transmission of electromagnetic radiation through subwavelength apertures. Optics Letters. 30: 2357-9. PMID 16196318 DOI: 10.1364/Ol.30.002357 |
0.337 |
|
| 2005 |
Janke C, Först M, Nagel M, Kurz H, Bartels A. Asynchronous optical sampling for high-speed characterization of integrated resonant terahertz sensors. Optics Letters. 30: 1405-7. PMID 15981548 DOI: 10.1364/Ol.30.001405 |
0.339 |
|
| 2005 |
Rölver R, Brüninghoff S, Först M, Spangenberg B, Kurz H. Fabrication of a Si∕SiO2 multiple-quantum-well light emitting diode using remote plasma enhanced chemical vapor deposition Journal of Vacuum Science & Technology B. 23: 3214-3218. DOI: 10.1116/1.2074867 |
0.322 |
|
| 2005 |
Rivas JG, Benet AF, Niehusmann J, Bolivar PH, Kurz H. Time-resolved broadband analysis of slow-light propagation and superluminal transmission of electromagnetic waves in three-dimensional photonic crystals Physical Review B. 71: 155110. DOI: 10.1103/Physrevb.71.155110 |
0.316 |
|
| 2005 |
Kim D, Merget F, Laurenzis M, Bolivar PH, Kurz H. Electrical percolation characteristics of Ge2Sb2Te5 and Sn doped Ge2Sb2Te5 thin films during the amorphous to crystalline phase transition Journal of Applied Physics. 97: 83538. DOI: 10.1063/1.1875742 |
0.32 |
|
| 2005 |
Turchanikov VI, Nazarov AN, Lysenko VS, Winkler O, Spangenberg B, Kurz H. Study of the unipolar bias recharging phenomenon in the nonvolatile memory cells containing silicon nanodots Materials Science and Engineering B-Advanced Functional Solid-State Materials. 124: 517-520. DOI: 10.1016/J.Mseb.2005.08.068 |
0.323 |
|
| 2005 |
Rölver R, Winkler O, Först M, Spangenberg B, Kurz H. Light emission from Si/SiO2 superlattices fabricated by RPECVD Microelectronics Reliability. 45: 915-918. DOI: 10.1016/J.Microrel.2004.11.025 |
0.357 |
|
| 2005 |
Schmidt M, Mollenhauer T, Gottlob HDB, Wahlbrink T, Efavi JK, Ottaviano L, Cristoloveanu S, Lemme MC, Kurz H. Nickel-silicide process for ultra-thin-body SOI-MOSFETs Microelectronic Engineering. 82: 497-502. DOI: 10.1016/J.Mee.2005.07.049 |
0.313 |
|
| 2005 |
Efavi JK, Mollenhauer T, Wahlbrink T, Gottlob HDB, Lemme MC, Kurz H. Tungsten work function engineering for dual metal gate nano-CMOS Journal of Materials Science: Materials in Electronics. 16: 433-436. DOI: 10.1007/S10854-005-2310-8 |
0.316 |
|
| 2004 |
Rivas JG, Kuttge M, Bolivar PH, Kurz H, Sánchez-Gil JA. Propagation of surface plasmon polaritons on semiconductor gratings. Physical Review Letters. 93: 256804. PMID 15697927 DOI: 10.1103/Physrevlett.93.256804 |
0.366 |
|
| 2004 |
Niehusmann J, Vörckel A, Bolivar PH, Wahlbrink T, Henschel W, Kurz H. Ultrahigh-quality-factor silicon-on-insulator microring resonator. Optics Letters. 29: 2861-3. PMID 15645805 DOI: 10.1364/Ol.29.002861 |
0.313 |
|
| 2004 |
Rivas JG, Bolivar PH, Kurz H. Thermal switching of the enhanced transmission of terahertz radiation through subwavelength apertures. Optics Letters. 29: 1680-1682. PMID 15309858 DOI: 10.1364/Ol.29.001680 |
0.323 |
|
| 2004 |
Laurenzis M, Först M, Bolivar PH, Kurz H. Influence of Hot Carrier Diffusion on the Density Limitation of Optical Data Storage Japanese Journal of Applied Physics. 43: 4700-4703. DOI: 10.1143/Jjap.43.4700 |
0.337 |
|
| 2004 |
Hadjiloucas S, Galvao RKH, Becerra VM, Bowen JW, Martini R, Brucherseifer M, Pellemans HPM, Bolivar PH, Kurz H, Chamberlain JM. Comparison of subspace and ARX models of a waveguide's terahertz transient response after optimal wavelet filtering Ieee Transactions On Microwave Theory and Techniques. 52: 2409-2419. DOI: 10.1109/Tmtt.2004.835983 |
0.539 |
|
| 2004 |
Saxler J, Gómez Rivas J, Janke C, Pellemans HPM, Haring Bolívar P, Kurz H. Time-domain measurements of surface plasmon polaritons in the terahertz frequency range Physical Review B - Condensed Matter and Materials Physics. 69: 155427-1-155427-4. DOI: 10.1103/Physrevb.69.155427 |
0.359 |
|
| 2004 |
Lemme MC, Moormann C, Lerch H, Moller M, Vratzov B, Kurz H. Triple-gate metal?oxide?semiconductor field effect transistors fabricated with interference lithography Nanotechnology. 15. DOI: 10.1088/0957-4484/15/4/016 |
0.306 |
|
| 2004 |
Henschel W, Wahlbrink T, Georgiev YM, Lemme MC, Mollenhauer T, Vratzov B, Fuchs A, Kurz H, Kittler M, Schwierz F. Electrical characterization of 12 nm EJ-MOSFETs on SOI substrates Solid-State Electronics. 48: 739-745. DOI: 10.1016/J.Sse.2003.09.037 |
0.325 |
|
| 2004 |
Lemme MC, Mollenhauer T, Henschel W, Wahlbrink T, Baus M, Winkler O, Granzner R, Schwierz F, Spangenberg B, Kurz H. Subthreshold behavior of triple-gate MOSFETs on SOI material Solid-State Electronics. 48: 529-534. DOI: 10.1016/J.Sse.2003.09.027 |
0.302 |
|
| 2004 |
Mizoguchi K, Hino T, Nakayama M, Dekorsy T, Bartels A, Kurz H, Nakashima S. Umklapp process in observation of coherent folded longitudinal acoustic phonons in a GaAs/AlAs long-period superlattice Physica E-Low-Dimensional Systems & Nanostructures. 21: 646-650. DOI: 10.1016/J.Physe.2003.11.096 |
0.323 |
|
| 2004 |
Efavi J, Lemme M, Mollenhauer T, Wahlbrink T, Bobek T, Wang D, Gottlob H, Kurz H. Investigation of NiAlN as gate-material for submicron CMOS technology Microelectronic Engineering. 76: 354-359. DOI: 10.1016/J.Mee.2004.07.050 |
0.331 |
|
| 2004 |
Winkler O, Baus M, Spangenberg B, Kurz H. Floating nano-dot MOS capacitor memory arrays without cell transistors Microelectronic Engineering. 73: 719-724. DOI: 10.1016/J.Mee.2004.03.041 |
0.317 |
|
| 2004 |
Baus M, Lemme MC, Chmielus S, Sittig R, Spangenberg B, Kurz H. Fabrication of monolithic bidirectional switch devices Microelectronic Engineering. 73: 463-467. DOI: 10.1016/J.Mee.2004.03.018 |
0.3 |
|
| 2004 |
Lemme MC, Mollenhauer T, Gottlob H, Henschel W, Efavi J, Welch C, Kurz H. Highly selective HBr etch process for fabrication of triple-gate nano-scale SOI-MOSFETs Microelectronic Engineering. 73: 346-350. DOI: 10.1016/J.Mee.2004.02.065 |
0.33 |
|
| 2004 |
Nüsse S, Wolter F, Bolivar PH, Köhler K, Hey R, Grahn HT, Kurz H. Intraband coherence of Bloch oscillations after momentum scattering Applied Physics A. 78: 491-495. DOI: 10.1007/S00339-003-2409-9 |
0.321 |
|
| 2004 |
Rivas JG, Janke C, Bolívar PH, Kurz H. Surface-plasmon-polariton enhanced tunneling of THz radiation through arrays of sub-wavelength apertures Springer Series in Chemical Physics. 690-692. DOI: 10.1007/3-540-27213-5_209 |
0.328 |
|
| 2004 |
Först M, Kurz H, Dekorsy T, Leavitt RP. Well-width dependence of coupled Bloch-phonon oscillations in biased InGaAs/InAlAs superlattices Physica Status Solidi (C). 1: 2702-2705. DOI: 10.1002/Pssc.200405315 |
0.383 |
|
| 2003 |
Hadjiloucas S, Galvão RKH, Bowen JW, Martini R, Brucherseifer M, Pellemans HPM, Bolívar PH, Kurz H, Digby J, Parkhurst GM, Chamberlain JM. Measurement of propagation constant in waveguides with wideband coherent terahertz spectroscopy Journal of the Optical Society of America B. 20: 391. DOI: 10.1364/Josab.20.000391 |
0.582 |
|
| 2003 |
Henschel W, Wahlbrink T, Georgiev YM, Lemme M, Mollenhauer T, Vratzov B, Fuchs A, Kurz H. Fabrication of 12 nm electrically variable shallow junction metal–oxide–semiconductor field effect transistors on silicon on insulator substrates Journal of Vacuum Science & Technology B. 21: 2975-2979. DOI: 10.1116/1.1621670 |
0.355 |
|
| 2003 |
Vorckel A, Monster M, Henschel W, Bolivar PH, Kurz H. Asymmetrically coupled silicon-on-insulator microring resonators for compact add-drop multiplexers Ieee Photonics Technology Letters. 15: 921-923. DOI: 10.1109/Lpt.2003.813419 |
0.308 |
|
| 2003 |
Rivas JG, Schotsch C, Bolivar PH, Kurz H. Enhanced transmission of THz radiation through subwavelength holes Physical Review B. 68: 201306. DOI: 10.1103/Physrevb.68.201306 |
0.333 |
|
| 2003 |
Janke C, Bolivar PH, Bartels A, Kurz H, Künzel H. Inversionless amplification of coherent terahertz radiation Physical Review B. 67: 155206. DOI: 10.1103/Physrevb.67.155206 |
0.33 |
|
| 2003 |
Först M, Kurz H, Dekorsy T, Leavitt RP. Bloch-phonon coupling and tunneling-induced coherent phonon excitation in semiconductor superlattices Physical Review B. 67. DOI: 10.1103/Physrevb.67.085305 |
0.371 |
|
| 2003 |
Zedler M, Janke C, Bolivar PH, Kurz H, Künzel H. Improved coherent terahertz emission by modification of the dielectric environment Applied Physics Letters. 83: 4196-4198. DOI: 10.1063/1.1628400 |
0.361 |
|
| 2003 |
Nositschka WA, Beneking C, Voigt O, Kurz H. Texturisation of multicrystalline silicon wafers for solar cells by reactive ion etching through colloidal masks Solar Energy Materials and Solar Cells. 76: 155-166. DOI: 10.1016/S0927-0248(02)00214-3 |
0.306 |
|
| 2003 |
Hofmann K, Spangenberg B, Luysberg M, Kurz H. Properties of evaporated titanium thin films and their possible application in single electron devices Thin Solid Films. 436: 168-174. DOI: 10.1016/S0040-6090(03)00582-0 |
0.311 |
|
| 2002 |
Bartels A, Kurz H. Generation of a broadband continuum by a Ti:sapphire femtosecond oscillator with a 1-GHz repetition rate. Optics Letters. 27: 1839-41. PMID 18033380 DOI: 10.1364/Ol.27.001839 |
0.352 |
|
| 2002 |
Nagel M, Bolivar PH, Brucherseifer M, Kurz H, Bosserhoff A, Büttner R. Integrated planar terahertz resonators for femtomolar sensitivity label-free detection of DNA hybridization. Applied Optics. 41: 2074-8. PMID 11936814 DOI: 10.1364/Ao.41.002074 |
0.323 |
|
| 2002 |
Hofmann K, Spangenberg B, Kurz H. Modified design for fabrication of metal based single electron transistors Journal of Vacuum Science & Technology B. 20: 271-273. DOI: 10.1116/1.1434969 |
0.311 |
|
| 2002 |
Brucherseifer M, Bolivar PH, Kurz H. Combined optical and spatial modulation THz-spectroscopy for the analysis of thin-layered systems Applied Physics Letters. 81: 1791-1793. DOI: 10.1063/1.1505118 |
0.349 |
|
| 2002 |
Herbst M, Schramm C, Brunner K, Asperger T, Riedl H, Abstreiter G, Vörckel A, Kurz H, Müller E. Structural and optical properties of vertically correlated Ge island layers grown at low temperatures Materials Science and Engineering B-Advanced Functional Solid-State Materials. 89: 54-57. DOI: 10.1016/S0921-5107(01)00756-5 |
0.359 |
|
| 2001 |
Sekine N, Hirakawa K, Voßebürger M, Bolivar PH, Kurz H. Crossover from coherent to incoherent excitation of two-dimensional plasmons in GaAs/Al x Ga 1-x As single quantum wells by femtosecond laser pulses Physical Review B. 64: 201323. DOI: 10.1103/Physrevb.64.201323 |
0.354 |
|
| 2001 |
Kyrsta S, Cremer R, Neuschütz D, Laurenzis M, Bolivar PH, Kurz H. Deposition and characterization of Ge–Sb–Te layers for applications in optical data storage Applied Surface Science. 179: 55-60. DOI: 10.1016/S0169-4332(01)00263-X |
0.36 |
|
| 2001 |
Bobek T, Facsko S, Dekorsy T, Kurz H. Ordered quantum dot formation on GaSb surfaces during ion sputtering Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms. 178: 101-104. DOI: 10.1016/S0168-583X(00)00468-7 |
0.309 |
|
| 2001 |
Hofmann K, Spangenberg B, Kurz H. In situ fabrication of vertical tunnel junctions for SET devices Microelectronic Engineering. 57: 851-856. DOI: 10.1016/S0167-9317(01)00563-9 |
0.31 |
|
| 2001 |
Kyrsta S, Cremer R, Neuschütz D, Laurenzis M, Bolivar PH, Kurz H. Characterization of Ge–Sb–Te thin films deposited using a composition-spread approach Thin Solid Films. 398: 379-384. DOI: 10.1016/S0040-6090(01)01384-0 |
0.312 |
|
| 2001 |
Nagel M, Dekorsy T, Brucherseifer M, Bolívar PH, Kurz H. Characterization of polypropylene thin-film microstrip lines at millimeter and submillimeter wavelengths Microwave and Optical Technology Letters. 29: 97-100. DOI: 10.1002/Mop.1096 |
0.304 |
|
| 2000 |
Bartels A, Dekorsy T, Kurz H. Impulsive excitation of phonon-pair combination states by second-order raman scattering Physical Review Letters. 84: 2981-4. PMID 11018991 DOI: 10.1103/Physrevlett.84.2981 |
0.323 |
|
| 2000 |
Dekorsy T, Bartels A, Kurz H, Kohler K, Hey R, Ploog K. Coupled bloch-phonon oscillations in semiconductor superlattices Physical Review Letters. 85: 1080-3. PMID 10991479 DOI: 10.1103/Physrevlett.85.1080 |
0.359 |
|
| 2000 |
Hofmann K, Luysberg M, Spangenberg B, Kurz H. Electrical And Microscopic Investigation Of E-Gun Evaporated Titanium Thin Films Mrs Proceedings. 615. DOI: 10.1557/Proc-615-G6.5.1 |
0.301 |
|
| 2000 |
Trappe C, Béchevet B, Hyot B, Winkler O, Facsko S, Kurz H. Recrystallization Dynamics of Phase Change Optical Disks with a Nitrogen Interface Layer Japanese Journal of Applied Physics. 39: 766-769. DOI: 10.1143/Jjap.39.766 |
0.341 |
|
| 2000 |
Först M, Segschneider G, Dekorsy T, Kurz H, Köhler K. Midbandgap electro-optic detection of Bloch oscillations Physical Review B. 61. DOI: 10.1103/Physrevb.61.R10563 |
0.371 |
|
| 2000 |
Hawker P, Kent AJ, Challis LJ, Bartels A, Dekorsy T, Kurz H, Köhler K. Observation of coherent zone-folded acoustic phonons generated by Raman scattering in a superlattice Applied Physics Letters. 77: 3209-3211. DOI: 10.1063/1.1324981 |
0.359 |
|
| 2000 |
Dekorsy T, Bartels A, Kurz H, Ghosh A, Jönsson L, Wilkins J, Köhler K, Hey R, Ploog K. Coupled Bloch-phonon oscillations in GaAs/AlGaAs superlattices: theory and experiment Physica E: Low-Dimensional Systems and Nanostructures. 7: 279-284. DOI: 10.1016/S1386-9477(99)00289-1 |
0.346 |
|
| 2000 |
Wilke I, Khazan M, Rieck CT, Kuzel P, Jaekel C, Kurz H. Time-domain Terahertz spectroscopy as a diagnostic tool for the electrodynamic properties of high temperature superconductors Physica C-Superconductivity and Its Applications. 341: 2271-2272. DOI: 10.1016/S0921-4534(00)00981-3 |
0.312 |
|
| 2000 |
Bobek T, Stein J, Dekorsy T, Kurz H. Sensitivity of SHG-measurements on oxide deposition process parameters Thin Solid Films. 364: 95-97. DOI: 10.1016/S0040-6090(99)00899-8 |
0.338 |
|
| 2000 |
Cremer R, Witthaut M, Neuschütz D, Trappe C, Laurenzis M, Winkler O, Kurz H. Deposition and characterization of metastable Cu3N layers for applications in optical data storage Mikrochimica Acta. 133: 299-302. DOI: 10.1007/S006040070109 |
0.328 |
|
| 1999 |
Bartels A, Dekorsy T, Kurz H. Femtosecond Ti:sapphire ring laser with a 2-GHz repetition rate and its application in time-resolved spectroscopy. Optics Letters. 24: 996-8. PMID 18073921 DOI: 10.1364/Ol.24.000996 |
0.312 |
|
| 1999 |
Koester T, Goldschmidtboeing F, Hadam B, Stein J, Altmeyer S, Spangenberg B, Kurz H, Neumann R, Brunner K, Abstreiter G. Coulomb Blockade Effects in a Highly Doped Silicon Quantum Wire Fabricated on Novel Molecular Beam Epitaxy Grown Material Japanese Journal of Applied Physics. 38: 465-468. DOI: 10.1143/Jjap.38.465 |
0.351 |
|
| 1999 |
Bartels A, Dekorsy T, Kurz H, Köhler K. Coherent zone-folded longitudinal acoustic phonons in semiconductor superlattices : excitation and detection Physical Review Letters. 82: 1044-1047. DOI: 10.1103/Physrevlett.82.1044 |
0.302 |
|
| 1999 |
Sekine N, Yamanaka K, Hirakawa K, Voßebürger M, Haring-Bolivar P, Kurz H. Observation of terahertz radiation from higher-order two-dimensional plasmon modes in GaAs/AlGaAs single quantum wells Applied Physics Letters. 74: 1006-1008. DOI: 10.1063/1.123437 |
0.309 |
|
| 1999 |
Bartels A, Dekorsy T, Kurz H, Köhler K. Coherent acoustic phonons in GaAs/AlAs superlattices Physica B-Condensed Matter. 263: 45-47. DOI: 10.1016/S0921-4526(98)01192-2 |
0.316 |
|
| 1999 |
Sekine N, Hirakawa K, Vossebuerger M, Haring-Bolivar P, Kurz H. Excitation process of two-dimensional plasmons excited by femtosecond laser pulses Microelectronic Engineering. 47: 289-292. DOI: 10.1016/S0167-9317(99)00216-6 |
0.365 |
|
| 1999 |
Bolivar PH, Dekorsy T, Kurz H. Chapter 4 Optically Excited Bloch Oscillations—Fundamentals and Application Perspectives Semiconductors and Semimetals. 66: 187-217. DOI: 10.1016/S0080-8784(08)60207-0 |
0.363 |
|
| 1999 |
Wolter F, Martini R, Tolk S, Haring Bolivar P, Kurz H, Hey R, Grahn H. Influence of carrier–carrier scattering on intraband dephasing Superlattices and Microstructures. 26: 93-102. DOI: 10.1006/Spmi.1999.0763 |
0.561 |
|
| 1999 |
Först M, Cho GC, Dekorsy T, Kurz H. Chirped Bloch oscillations in strain-balanced InGaAs/InGaAs superlattices Superlattices and Microstructures. 26: 83-92. DOI: 10.1006/Spmi.1999.0762 |
0.336 |
|
| 1999 |
Dekorsy T, Bartels A, Kurz H, Mizoguchi K, Nakayama M, Kohler K. Coherent Acoustic Phonons in Semiconductor Superlattices Physica Status Solidi B-Basic Solid State Physics. 215: 425-430. DOI: 10.1002/(Sici)1521-3951(199909)215:1<425::Aid-Pssb425>3.0.Co;2-O |
0.325 |
|
| 1998 |
Vossebürger M, Brucherseifer M, Cho GC, Roskos HG, Kurz H. Propagation effects in electro-optic sampling of terahertz pulses in GaAs. Applied Optics. 37: 3368-71. PMID 18273296 DOI: 10.1364/Ao.37.003368 |
0.335 |
|
| 1998 |
Roskos HG, Pfeifer T, Heiliger H-, Löffler T, Kurz H. Optical Probing of Ultrafast Devices Materials Science Forum. 59-66. DOI: 10.4028/Www.Scientific.Net/Msf.297-298.59 |
0.302 |
|
| 1998 |
Bakker HJ, Cho GC, Kurz H, Wu Q, Zhang XC. Distortion of terahertz pulses in electro-optic sampling Journal of the Optical Society of America B: Optical Physics. 15: 1795-1801. DOI: 10.1364/Josab.15.001795 |
0.531 |
|
| 1998 |
Dekorsy T, Cho GC, Kurz H. Coherent Phonons in Semiconductors and Semiconductor Heterostructures Journal of Nonlinear Optical Physics & Materials. 7: 201-213. DOI: 10.1142/S021886359800017X |
0.369 |
|
| 1998 |
Koester T, Goldschmidtboeing F, Hadam B, Stein J, Altmeyer S, Spangenberg B, Kurz H, Neumann R, Brunner K, Abstreiter G. Direct patterning of single electron tunneling transistors by high resolution electron beam lithography on highly doped molecular beam epitaxy grown silicon films Journal of Vacuum Science & Technology B. 16: 3804-3807. DOI: 10.1116/1.590412 |
0.358 |
|
| 1998 |
Hu S, Hamidi A, Altmeyer S, Köster T, Spangenberg B, Kurz H. Fabrication of silicon and metal nanowires and dots using mechanical atomic force lithography Journal of Vacuum Science & Technology B. 16: 2822-2824. DOI: 10.1116/1.590277 |
0.301 |
|
| 1998 |
Pfeifer T, Loffler T, Roskos HG, Kurz H, Singer M, Biebl EM. Electro-optic near-field mapping of planar resonators Ieee Transactions On Antennas and Propagation. 46: 284-291. DOI: 10.1109/8.660974 |
0.32 |
|
| 1998 |
Bakker H, Hunsche S, Kurz H. Coherent phonon polaritons as probes of anharmonic phonons in ferroelectrics Reviews of Modern Physics. 70: 523-536. DOI: 10.1103/Revmodphys.70.523 |
0.331 |
|
| 1998 |
Lüpke G, Busch O, Meyer C, Kurz H, Brandt O, Yang H, Trampert A, Ploog KH, Lucovsky G. Interface electronic transition observed by optical second-harmonic spectroscopy in β − G a N / G a A s ( 001 ) heterostructures Physical Review B. 57: 3722-3725. DOI: 10.1103/Physrevb.57.3722 |
0.34 |
|
| 1998 |
Dekorsy T, Segschneider G, Kim AMT, Hunsche S, Kurz H. Nonlinear optics in semiconductors and multiple quantum wells Pure and Applied Optics (Print Edition) (United Kingdom). 7: 313-318. DOI: 10.1088/0963-9659/7/2/020 |
0.381 |
|
| 1998 |
Bartels A, Dekorsy T, Kurz H, Köhler K. Coherent control of acoustic phonons in semiconductor superlattices Applied Physics Letters. 72: 2844-2846. DOI: 10.1063/1.121476 |
0.314 |
|
| 1998 |
Nagel M, Meyer C, Heiliger H, Dekorsy T, Kurz H, Hey R, Ploog K. Optical second-harmonic probe for ultra-high frequency on-chip interconnects with benzocyclobutene Applied Physics Letters. 72: 1018-1020. DOI: 10.1063/1.120952 |
0.378 |
|
| 1998 |
Köster T, Hadam B, Goldschmidtböing F, Hofmann K, Gondermann J, Stein J, Hu S, Altmeyer S, Spangenberg B, Kurz H. MOS-compatible fabrication and characterization of tunnel junctions in BESOI-material Microelectronic Engineering. 41: 531-534. DOI: 10.1016/S0167-9317(98)00124-5 |
0.351 |
|
| 1998 |
Hollkott J, Kahlmann F, Jaekel C, Hu S, Spangenberg B, Kurz H. Sub-100 nm lithography and high aspect-ratio masks for fabrication of Josephson devices by ion implantation Microelectronic Engineering. 41: 403-406. DOI: 10.1016/S0167-9317(98)00093-8 |
0.301 |
|
| 1998 |
Mikkelsen H, Hunderi O, Dekorsy T, Hunsche S, Kurz H. Coupling of exciton states in superlattice and bulk GaAs optoelectronic modulators, studied by density matrix models and optical modulation spectroscopy Superlattices and Microstructures. 23: 191-194. DOI: 10.1006/Spmi.1996.0374 |
0.364 |
|
| 1998 |
Bakker HJ, Dekorsy T, Cho GC, Kurz H, Leisching P, Köhler H. Coherent dynamics of continuum and excitonic states in quantum confined systems Physica Status Solidi (B) Basic Research. 206: 443-453. DOI: 10.1002/(Sici)1521-3951(199803)206:1<443::Aid-Pssb443>3.0.Co;2-X |
0.493 |
|
| 1998 |
Bakker HJ, Hunsche S, Kurz H. Coherent phonon polaritons as probes of anharmonic phonons in ferroelectrics Reviews of Modern Physics. 70: 523-536. |
0.458 |
|
| 1998 |
Cho GC, Bakker HJ, Kurz H. THz pulse distortion in electro-optic detection by phonon-polariton propagation Conference On Lasers and Electro-Optics Europe - Technical Digest. 60-61. |
0.468 |
|
| 1997 |
Köster T, Hadam B, Hofmann K, Gondermann J, Stein J, Hu S, Altmeyer S, Spangenberg B, Kurz H. Metal–oxide–semiconductor-compatible silicon based single electron transistor using bonded and etched back silicon on insulator material Journal of Vacuum Science & Technology B. 15: 2836-2839. DOI: 10.1116/1.589739 |
0.35 |
|
| 1997 |
Jaekel C, Roskos HG, Kurz H. Ultrafast optoelectronic switches based on high-T/sub c/ superconductors Ieee Transactions On Applied Superconductivity. 7: 3722-3725. DOI: 10.1109/77.622227 |
0.328 |
|
| 1997 |
Nüsse S, Haring Bolivar P, Kurz H, Klimov V, Levy F. Carrier cooling and exciton formation in GaSe Physical Review B. 56: 4578-4583. DOI: 10.1103/Physrevb.56.4578 |
0.365 |
|
| 1997 |
Mizoguchi K, Matsutani K, Nakashima S, Dekorsy T, Kurz H, Nakayama M. Observation Of Coherent Acoustic Phonons In Fibonacci Superlattices Physical Review B. 55: 9336-9339. DOI: 10.1103/Physrevb.55.9336 |
0.302 |
|
| 1997 |
Ohlhoff C, Lupke G, Meyer C, Kurz H. Static and high-frequency electric fields in silicon MOS and MS structures probed by optical second-harmonic generation Physical Review B. 55: 4596-4606. DOI: 10.1103/Physrevb.55.4596 |
0.325 |
|
| 1997 |
Bartels G, Cho GC, Dekorsy T, Kurz H, Stahl A, Köhler K. Coherent signature of differential transmission signals in semiconductors: Theory and experiment Physical Review B. 55: 16404-16413. DOI: 10.1103/Physrevb.55.16404 |
0.325 |
|
| 1997 |
Cho GC, Ziebell A, Dekorsy T, Bakker HJ, Opitz B, Kohl A, Kurz H. Time-resolved study of coherent and incoherent transport in an InGaAsP/InGaAsP superlattice electro-optic modulator Journal of Applied Physics. 82: 4400-4407. DOI: 10.1063/1.366540 |
0.568 |
|
| 1997 |
Altmeyer S, Hamidi A, Spangenberg B, Kurz H. 77 K single electron transistors fabricated with 0.1 μm technology Journal of Applied Physics. 81: 8118-8120. DOI: 10.1063/1.365374 |
0.327 |
|
| 1997 |
Segschneider G, Dekorsy T, Kurz H, Hey R, Ploog K. Energy resolved ultrafast relaxation dynamics close to the band edge of low-temperature grown GaAs Applied Physics Letters. 71: 2779-2781. DOI: 10.1063/1.120131 |
0.337 |
|
| 1997 |
Heiliger H-, Nagel M, Roskos HG, Kurz H, Schnieder F, Heinrich W, Hey R, Ploog K. Low-dispersion thin-film microstrip lines with cyclotene (benzocyclobutene) as dielectric medium Applied Physics Letters. 70: 2233-2235. DOI: 10.1063/1.118849 |
0.327 |
|
| 1997 |
Meyer C, Lüpke G, Kamienski ESv, Gölz A, Kurz H. Nonlinear optical mapping of 3C-inclusions in 6H-SiC-epilayers Diamond and Related Materials. 6: 1374-1377. DOI: 10.1016/S0925-9635(97)00097-6 |
0.311 |
|
| 1997 |
Kamienski EGSv, Leonhard C, Scharnholz S, Gölz A, Kurz H. Passivation of interface traps in MOS-devices on n- and p-type 6H-SiC Diamond and Related Materials. 6: 1497-1499. DOI: 10.1016/S0925-9635(97)00049-6 |
0.303 |
|
| 1997 |
Debey D, Bluhm R, Habets N, Kurz H. Fabrication of planar thermocouples for real-time measurements of temperature profiles in polymer melts Sensors and Actuators a-Physical. 58: 179-184. DOI: 10.1016/S0924-4247(97)01389-7 |
0.303 |
|
| 1997 |
Lucovsky G, Banerjee A, Niimi H, Koh K, Hinds B, Meyer C, Lüpke G, Kurz H. Elimination of sub-oxide transition regions at SiSiO2 interfaces by rapid thermal annealing at 900°C Applied Surface Science. 202-206. DOI: 10.1016/S0169-4332(97)80079-7 |
0.313 |
|
| 1997 |
Gölz A, Scharnholz S, Kurz H. The role of oxygen and nitrogen at the interface Microelectronic Engineering. 36: 187-190. DOI: 10.1016/S0167-9317(97)00045-2 |
0.309 |
|
| 1997 |
Gölz A, Lucovsky G, Koh K, Wolfe D, Niimi H, Kurz H. Plasma-assisted formation of low defect density silicon carbide-silicon dioxide, SiCSiO2, interfaces Microelectronic Engineering. 36: 73-76. DOI: 10.1016/S0167-9317(97)00018-X |
0.312 |
|
| 1997 |
Gondermann J, Schiepanski J, Hadam B, Köster T, Röwer T, Stein J, Spangenberg B, Roskos H, Kurz H. New concept for ultra small N-MOSFET's Microelectronic Engineering. 35: 305-308. DOI: 10.1016/S0167-9317(96)00134-7 |
0.307 |
|
| 1997 |
Köster T, Stein J, Hadam B, Gondermann J, Spangenberg B, Roskos HG, Kurz H, Holzmann M, Riedinger M, Abstreiter G. Fabrication and characterisation of SiGe based in-plane-gate transistors Microelectronic Engineering. 35: 301-304. DOI: 10.1016/S0167-9317(96)00132-3 |
0.352 |
|
| 1997 |
Lövenich R, Victor K, Bartels G, Stahl A, Müller A, Haring-Bolivar P, Dekorsy T, Kurz H. The resonant interband contribution to the TEOS signal Solid State Communications. 101: 167-171. DOI: 10.1016/S0038-1098(96)00562-5 |
0.319 |
|
| 1997 |
Lü ZG, Cho GC, Lüpke G, Kurz H. Visible fs-pulses generated by dispersive frequency doubling in Lithium Triborate Optics Communications. 133: 263-267. DOI: 10.1016/S0030-4018(96)00299-4 |
0.308 |
|
| 1997 |
Hunsche S, Kurz H. Coherent lattice dynamics of highly photo-excited tellurium Applied Physics A. 65: 221-229. DOI: 10.1007/S003390050570 |
0.371 |
|
| 1997 |
Nüsse S, Haring Bolivar P, Kurz H, Klimov V, Lévy F. Femtosecond Study of Carrier Cooling and Exciton Formation in the Layered III–VI Semiconductor GaSe Physica Status Solidi (B). 204: 98-101. DOI: 10.1002/1521-3951(199711)204:1<98::Aid-Pssb98>3.0.Co;2-G |
0.372 |
|
| 1997 |
Wolter F, Roskos HG, Bolivar PH, Bartels G, Kurz H, Köhler K, Grahn HT, Hey R. Influence of LO-Phonon Emission on Bloch Oscillations in Semiconductor Superlattices Physica Status Solidi B-Basic Solid State Physics. 204: 83-86. DOI: 10.1002/1521-3951(199711)204:1<83::Aid-Pssb83>3.0.Co;2-B |
0.332 |
|
| 1996 |
Dekorsy T, Kim AM, Cho GC, Hunsche S, Bakker HJ, Kurz H, Chuang SL, Köhler K. Quantum Coherence of Continuum States in the Valence Band of GaAs Quantum Wells. Physical Review Letters. 77: 3045-3048. PMID 10062117 DOI: 10.1103/Physrevlett.77.3045 |
0.533 |
|
| 1996 |
Scheidler M, Lemmer U, Kersting R, Karg S, Riess W, Cleve B, Mahrt RF, Kurz H, Bässler H, Göbel EO, Thomas P. Monte Carlo study of picosecond exciton relaxation and dissociation in poly(phenylenevinylene). Physical Review. B, Condensed Matter. 54: 5536-5544. PMID 9986515 DOI: 10.1103/Physrevb.54.5536 |
0.323 |
|
| 1996 |
Cho GC, Dekorsy T, Bakker HJ, Kurz H, Kohl A, Opitz B. Bloch oscillations in In-Ga-As-P/In-Ga-As-P heterostructures observed with time-resolved transmission spectroscopy. Physical Review. B, Condensed Matter. 54: 4420-4423. PMID 9986386 DOI: 10.1103/Physrevb.54.4420 |
0.52 |
|
| 1996 |
Martini R, Klose G, Roskos H, Kurz H, Grahn H, Hey R. Superradiant emission from Bloch oscillations in semiconductor superlattices. Physical Review B. 54: 14325-14328. PMID 9985518 DOI: 10.1103/Physrevb.54.R14325 |
0.58 |
|
| 1996 |
Jaekel C, Roskos HG, Kurz H. Emission of picosecond electromagnetic pulses from optically excited superconducting bridges. Physical Review B. 54. PMID 9984406 DOI: 10.1103/Physrevb.54.R6889 |
0.34 |
|
| 1996 |
Dekorsy T, Auer H, Bakker HJ, Roskos HG, Kurz H. THz electromagnetic emission by coherent infrared-active phonons. Physical Review. B, Condensed Matter. 53: 4005-4014. PMID 9983955 DOI: 10.1103/Physrevb.53.4005 |
0.566 |
|
| 1996 |
Dekorsy T, Kim AM, Cho GC, Kurz H, Kuznetsov AV, Förster A. Subpicosecond coherent carrier-phonon dynamics in semiconductor heterostructures. Physical Review. B, Condensed Matter. 53: 1531-1538. PMID 9983616 DOI: 10.1103/Physrevb.53.1531 |
0.366 |
|
| 1996 |
Cho GC, Bakker HJ, Dekorsy T, Kurz H. Time-resolved observation of coherent phonons by the Franz-Keldysh effect. Physical Review. B, Condensed Matter. 53: 6904-6907. PMID 9982118 DOI: 10.1103/Physrevb.53.6904 |
0.547 |
|
| 1996 |
Trappe C, Schütze M, Lüpke G, Kurz H. Nonresonant Multiphoton Double Ionization Of Ga And As Probed By A Picosecond Double-Pulse Technique Physical Review A. 53: 4320-4325. PMID 9913404 DOI: 10.1103/Physreva.53.4320 |
0.304 |
|
| 1996 |
Voßebürger M, Roskos HG, Wolter F, Waschke C, Kurz H, Hirakawa K, Wilke I, Yamanaka K. Radiative decay of optically excited coherent plasmons in a two-dimensional electron gas Journal of the Optical Society of America B-Optical Physics. 13: 1045-1053. DOI: 10.1364/Josab.13.001045 |
0.378 |
|
| 1996 |
Leisching P, Dekorsy T, Bakker HJ, Roskos HG, Kurz H, Köhler K. Dephasing and selection rules of interband and intraband polarizations in superlattices Journal of the Optical Society of America B. 13: 1009. DOI: 10.1364/Josab.13.001009 |
0.539 |
|
| 1996 |
Köster T, Gondermann J, Hadam B, Spangenberg B, Schütze M, Roskos HG, Kurz H, Brunner J, Abstreiter G. Optical properties of reactive‐ion‐etched Si/Si1−xGex heterostructures Journal of Vacuum Science & Technology B. 14: 698-706. DOI: 10.1116/1.589159 |
0.365 |
|
| 1996 |
Gondermann J, Röwer T, Hadam B, Köster T, Stein J, Spangenberg B, Roskos H, Kurz H. A triangle‐shaped nanoscale metal–oxide–semiconductor device Journal of Vacuum Science & Technology B. 14: 4042-4045. DOI: 10.1116/1.588640 |
0.313 |
|
| 1996 |
Pfeifer T, Heiliger H-, Loffler T, Ohlhoff C, Meyer C, Lupke G, Roskos HG, Kurz H. Optoelectronic on-chip characterization of ultrafast electric devices: Measurement techniques and applications Ieee Journal of Selected Topics in Quantum Electronics. 2: 586-604. DOI: 10.1109/2944.571758 |
0.355 |
|
| 1996 |
Heiliger H‐, Vossebürger M, Roskos HG, Kurz H, Hey R, Ploog K. Application of liftoff low‐temperature‐grown GaAs on transparent substrates for THz signal generation Applied Physics Letters. 69: 2903-2905. DOI: 10.1063/1.117357 |
0.326 |
|
| 1996 |
Meyer C, Lüpke G, Kamienski ESv, Gölz A, Kurz H. Nonlinear Optical Mapping Of Silicon Carbide Polytypes In 6H-Sic Epilayers Applied Physics Letters. 69: 2243-2245. DOI: 10.1063/1.117141 |
0.315 |
|
| 1996 |
Kim AMT, Hunsche S, Dekorsy T, Kurz H, Köhler K. Time-resolved study of intervalence band thermalization in a GaAs quantum well Applied Physics Letters. 68: 2956-2958. DOI: 10.1063/1.116367 |
0.34 |
|
| 1996 |
Ohlhoff C, Meyer C, Lüpke G, Löffler T, Pfeifer T, Roskos HG, Kurz H. Optical Second-Harmonic Probe For Silicon Millimeter-Wave Circuits Applied Physics Letters. 68: 1699-1701. DOI: 10.1063/1.115910 |
0.326 |
|
| 1996 |
Pfeifer T, Loffler T, Roskos HG, Kurz H, Singer M, Biebl EM. Electro-optic measurement of the electric near-field distribution of 7 GHz planar resonator Electronics Letters. 32: 1305-1307. DOI: 10.1049/El:19960881 |
0.328 |
|
| 1996 |
Dekorsy T, Auer H, Waschke C, Bakker HJ, Roskos HG, Kurz H. THz-wave emission by coherent optical phonons Physica B-Condensed Matter. 219: 775-777. DOI: 10.1016/0921-4526(95)00882-9 |
0.555 |
|
| 1996 |
Heiliger H-, Pfeifer T, Roskos HG, Kurz H. External photoconductive switches as generators and detectors of picosecond electric transients Microelectronic Engineering. 31: 415-426. DOI: 10.1016/0167-9317(95)00364-9 |
0.323 |
|
| 1996 |
Löffler T, Pfeifer T, Roskos HG, Kurz H, Weide DWvd. Stable optoelectronic detection of free-running microwave signals with 150-GHz bandwidth Microelectronic Engineering. 31: 397-408. DOI: 10.1016/0167-9317(95)00362-2 |
0.343 |
|
| 1996 |
Pfeifer T, Heiliger H-, Löffler T, Roskos HG, Kurz H. Picosecond optoelectronic on-wafer characterization of coplanar waveguides on high-resistivity Si and Si/SiO 2 substrates Microelectronic Engineering. 31: 385-395. DOI: 10.1016/0167-9317(95)00361-4 |
0.381 |
|
| 1996 |
Barth R, Hamidi AH, Hadam B, Holkott J, Dunkmann D, Auge J, Kurz H. Electron beam lithography and ion implantation techniques for fabrication of high-T c Josephson junctions Microelectronic Engineering. 30: 407-410. DOI: 10.1016/0167-9317(95)00274-X |
0.3 |
|
| 1996 |
Altmeyer S, Spangenberg B, Kühnel F, Kurz H. Step edge cut off: a new fabrication process for metal-based single electron devices Microelectronic Engineering. 30: 399-402. DOI: 10.1016/0167-9317(95)00272-3 |
0.325 |
|
| 1996 |
Köster T, Hadam B, Gondermann J, Spangenberg B, Roskos HG, Kurz H, Brunner J, Abstreiter G. Investigation of Si/SiGe heterostructures patterned by reactive ion etching Microelectronic Engineering. 30: 341-344. DOI: 10.1016/0167-9317(95)00259-6 |
0.378 |
|
| 1996 |
Barth R, Siewert J, Spangenberg B, Jaekel C, Kurz H, Utz B, Prusseit W, Kinder H, Wolf H. Silicon micromachining technique for fabricating high temperature superconducting microbolometers Vacuum. 47: 1129-1132. DOI: 10.1016/0042-207X(96)00141-8 |
0.307 |
|
| 1996 |
Hirakawa K, Wilke I, Yamanaka K, Roskos HG, Voßbürger M, Wolter F, Waschke C, Kurz H, Grayson M, Tsui DC. Coherent submillimeter-wave emission from non-equilibrium two-dimensional free carrier plasmas in AlGa/AsGaAs heterojunctions Surface Science. 368-371. DOI: 10.1016/0039-6028(96)00423-2 |
0.339 |
|
| 1996 |
Dekorsy T, Ott R, Leisching P, Bakker H, Waschke C, Roskos H, Kurz H, Köhler K. Time-resolved optical investigations of bloch oscillations in semiconductor superlattices Solid-State Electronics. 40: 551-554. DOI: 10.1016/0038-1101(95)00288-X |
0.566 |
|
| 1996 |
Leisching P, Beck W, Kurz H, Köhler K, Schäfer W, Leo K. Nonlinear optical studies of Bloch oscillations Solid-State Electronics. 40: 545-549. DOI: 10.1016/0038-1101(95)00287-1 |
0.486 |
|
| 1996 |
Hunsche S, Dekorsy T, Klimov V, Kurz H. Ultrafast dynamics of carrier-induced absorption changes in highly-excited CdSe nanocrystals Applied Physics B. 62: 3-10. DOI: 10.1007/Bf01081240 |
0.348 |
|
| 1996 |
Klimov VI, Haring-Bolivar P, Kurz H, Karavanskii VA. Optical nonlinearities and carrier trapping dynamics in CdS and CuxS nanocrystals Superlattices and Microstructures. 20: 395-404. DOI: 10.1006/Spmi.1996.0095 |
0.314 |
|
| 1996 |
Schütze M, Trappe C, Tabellion M, Lüpke G, Kurz H. All-optical mass spectrometric system based on picosecond laser pulses Surface and Interface Analysis. 24: 399-404. DOI: 10.1002/(Sici)1096-9918(199606)24:6<399::Aid-Sia134>3.0.Co;2-N |
0.315 |
|
| 1995 |
Lüpke G, Meyer C, Ohlhoff C, Kurz H, Lehmann S, Marowsky G. Optical second-harmonic generation as a probe of electric-field-induced perturbation of centrosymmetric media. Optics Letters. 20: 1997-1999. PMID 19862229 DOI: 10.1364/Ol.20.001997 |
0.324 |
|
| 1995 |
Hunsche S, Wienecke K, Dekorsy T, Kurz H. Impulsive Softening of Coherent Phonons in Tellurium. Physical Review Letters. 75: 1815-1818. PMID 10060398 DOI: 10.1103/Physrevlett.75.1815 |
0.36 |
|
| 1995 |
Leisching P, Ott R, Bolivar PH, Dekorsy T, Bakker HJ, Roskos HG, Kurz H, Köhler K. External-field-induced electric dipole moment of biexcitons in a semiconductor. Physical Review. B, Condensed Matter. 52: 16993-16996. PMID 9981113 DOI: 10.1103/Physrevb.52.R16993 |
0.524 |
|
| 1995 |
Leisching P, Dekorsy T, Bakker HJ, Kurz H, Köhler K. Exceptionally slow dephasing of electronic continuum states in a semiconductor. Physical Review. B, Condensed Matter. 51: 18015-18018. PMID 9978844 DOI: 10.1103/Physrevb.51.18015 |
0.523 |
|
| 1995 |
Dekorsy T, Ott R, Kurz H, Köhler K. Bloch Oscillations At Room Temperature Physical Review B. 51: 17275-17278. PMID 9978755 DOI: 10.1103/Physrevb.51.17275 |
0.352 |
|
| 1995 |
Leisching P, Beck W, Kurz H, Schäfer W, Leo K, Köhler K. External field-dependent enhancement of internal Coulomb interactions in time-resolved four-wave mixing Physical Review B. 51: 7962-7965. PMID 9977400 DOI: 10.1103/Physrevb.51.7962 |
0.478 |
|
| 1995 |
Roskos HG, Waschke C, Victor K, Köhler K, Kurz H. Bloch oscillations in semiconductor superlattices Japanese Journal of Applied Physics. 34: 1370-1375. DOI: 10.1143/Jjap.34.1370 |
0.366 |
|
| 1995 |
Loffler T, Pfeifer T, Roskos HG, Kurz H. Detection of free-running electric signals up to 75 GHz using a femtosecond-pulse laser Ieee Photonics Technology Letters. 7: 1189-1191. DOI: 10.1109/68.466586 |
0.317 |
|
| 1995 |
Pfeifer T, Heiliger H-, Roskos HG, Kurz H. Generation and detection of picosecond electric pulses with freely positionable photoconductive probes Ieee Transactions On Microwave Theory and Techniques. 43: 2856-2862. DOI: 10.1109/22.475646 |
0.331 |
|
| 1995 |
Barth R, Siewert J, Jaekel C, Spangenberg B, Kurz H, Prusseit W, Utz B, Wolf H. Epitaxial YBa2Cu3O7−δ air‐bridge microbolometers on silicon substrates Journal of Applied Physics. 78: 4218-4221. DOI: 10.1063/1.360745 |
0.355 |
|
| 1995 |
Altmeyer S, Spangenberg B, Kurz H. A New Concept For The Design And Realization Of Metal Based Single Electron Devices : Step Edge Cut-Off Applied Physics Letters. 67: 569-571. DOI: 10.1063/1.115172 |
0.312 |
|
| 1995 |
Pfeifer T, Heiliger H–, Kamienski ESv, Roskos HG, Kurz H. Charge accumulation effects and microwave absorption of coplanar waveguides fabricated on high–resistivity Si with SiO2 insulation layer Applied Physics Letters. 67: 2624-2626. DOI: 10.1063/1.114316 |
0.362 |
|
| 1995 |
Hermanns JP, Rüders F, Kamienski ESv, Roskos HG, Kurz H, Hollricher O, Buchal C, Mantl S. Vertical silicon metal–semiconductor–metal photodetectors with buried CoSi2 contact Applied Physics Letters. 66: 866-868. DOI: 10.1063/1.113413 |
0.345 |
|
| 1995 |
Barth R, Siewert J, Spangenberg B, Jaekel C, Kurz H, Utz B, Prusseit W, Wolf H. High-Tc air-bridge microbolometers fabricated by silicon micromachining technique Microelectronic Engineering. 27: 499-502. DOI: 10.1016/0167-9317(94)00153-L |
0.308 |
|
| 1995 |
Gondermann J, Spangenberg B, Köster T, Hadam B, Roskos HG, Kurz H, Brunner J, Schittenhelm P, Abstreiter G, Goβner H, Eisele I. Fabrication and characterization of Si/SiGe nanometer structures Microelectronic Engineering. 27: 83-86. DOI: 10.1016/0167-9317(94)00061-X |
0.336 |
|
| 1995 |
Brunner J, Schittenhelm P, Gondermann J, Spangenberg B, Hadam B, Köster T, Roskos HG, Kurz H, Gossner H, Eisele I, Abstreiter G. SiGe wires and dots grown by local epitaxy Journal of Crystal Growth. 150: 1060-1064. DOI: 10.1016/0022-0248(95)80101-H |
0.317 |
|
| 1995 |
Brunner J, Jung W, Schittenhelm P, Gail M, Abstreiter G, Gonderman J, Hadam B, Koester T, Spangenberg B, Roskos HG, Kurz H, Gossner H, Eisele I. Local epitaxy of Si/SiGe wires and dots Journal of Crystal Growth. 157: 270-275. DOI: 10.1016/0022-0248(95)00325-8 |
0.345 |
|
| 1995 |
Leisching P, Ott R, Bolivar PH, Dekorsy T, Bakker HJ, Roskos HG, Kurz H, Köhler K. Coherent dynamics of excitonic and biexcitonic wave packets in semiconductor superlattices Il Nuovo Cimento D. 17: 1573-1578. DOI: 10.1007/Bf02457246 |
0.332 |
|
| 1995 |
Beck W, Leisching P, Kurz H, Schäfer W, Leo K, Köhler K. External-field-dependent enhancement of internal Coulomb interactions in time-resolved four-wave mixing Il Nuovo Cimento D. 17: 1355-1358. DOI: 10.1007/Bf02457209 |
0.478 |
|
| 1995 |
Klimov V, Hunsche S, Kurz H. Coulomb effects in femtosecond nonlinear transmission of semiconductor nanocrystals Physica Status Solidi (B). 188: 259-267. DOI: 10.1002/Pssb.2221880123 |
0.372 |
|
| 1994 |
Kersting R, Lemmer U, Deussen M, Bakker HJ, Mahrt RF, Kurz H, Arkhipov VI, Bässler H, Göbel EO. Ultrafast field-induced dissociation of excitons in conjugated polymers. Physical Review Letters. 73: 1440-1443. PMID 10056793 DOI: 10.1103/Physrevlett.73.1440 |
0.529 |
|
| 1994 |
Hunsche S, Leo K, Kurz H, Köhler K. Exciton absorption saturation by phase-space filling: Influence of carrier temperature and density. Physical Review. B, Condensed Matter. 49: 16565-16568. PMID 10010811 DOI: 10.1103/Physrevb.49.16565 |
0.487 |
|
| 1994 |
Hunsche S, Leo K, Kurz H, Köhler K. Femtosecond intersubband relaxation in GaAs quantum wells. Physical Review. B, Condensed Matter. 50: 5791-5794. PMID 9976941 DOI: 10.1103/Physrevb.50.5791 |
0.496 |
|
| 1994 |
Bakker HJ, Hunsche S, Kurz H. Investigation of anharmonic lattice vibrations with coherent phonon polaritons. Physical Review. B, Condensed Matter. 50: 914-920. PMID 9975757 DOI: 10.1103/Physrevb.50.914 |
0.481 |
|
| 1994 |
Klimov V, Hunsche S, Kurz H. Biexciton effects in femtosecond nonlinear transmission of semiconductor quantum dots. Physical Review. B, Condensed Matter. 50: 8110-8113. PMID 9974823 DOI: 10.1103/Physrevb.50.8110 |
0.354 |
|
| 1994 |
Dekorsy T, Leisching P, Köhler K, Kurz H. Electro-optic detection of Bloch oscillations. Physical Review B. 50: 8106-8109. PMID 9974822 DOI: 10.1103/Physrevb.50.8106 |
0.342 |
|
| 1994 |
Bakker HJ, Kurz H. Polariton effects in four-wave mixing. Physical Review. B, Condensed Matter. 50: 7805-7808. PMID 9974767 DOI: 10.1103/Physrevb.50.7805 |
0.503 |
|
| 1994 |
Pfeifer T, Heiliger H-, Kamienski ESv, Roskos HG, Kurz H. Fabrication and characterization of freely positionable silicon-on-sapphire photoconductive probes Journal of the Optical Society of America B-Optical Physics. 11: 2547-2552. DOI: 10.1364/Josab.11.002547 |
0.34 |
|
| 1994 |
Leisching P, Bolivar PH, Schwedler R, Leo K, Kurz H, Kohler K, Ganser P. Investigation of Bloch oscillations in a GaAs/AlGaAs superlattice by spectrally resolved four-wave mixing Semiconductor Science and Technology. 9: 419-421. DOI: 10.1088/0268-1242/9/5S/003 |
0.485 |
|
| 1994 |
Waschke C, Roskos HG, Leo K, Kurz H, Kohler K. Experimental realization of the Bloch oscillator in a semiconductor superlattice Semiconductor Science and Technology. 9: 416-418. DOI: 10.1088/0268-1242/9/5S/002 |
0.497 |
|
| 1994 |
Dekorsy T, Leisching P, Waschke C, Kohler K, Leo K, Roskos HG, Kurz H. Terahertz Bloch oscillations in semiconductor superlattices Semiconductor Science and Technology. 9: 1959-1964. DOI: 10.1088/0268-1242/9/11S/017 |
0.528 |
|
| 1994 |
Averin SV, Kamienski ESv, Roskos HG, Kersting R, Pletner J, Geelen H, Kohl A, Spangenberg B, Leo K, Kurz H, Hollricher O. Heterobarrier photodiode MSM structures with subpicosecond temporal resolution Quantum Electronics. 24: 814-818. DOI: 10.1070/Qe1994V024N09Abeh000249 |
0.486 |
|
| 1994 |
Schwedler R, Mikkelsen H, Wolter K, Laschet D, Hergeth J, Kurz H. InGaAs/InP multiple quantum well modulators in experiment and theory Journal De Physique Iii. 4: 2341-2359. DOI: 10.1051/Jp3:1994281 |
0.324 |
|
| 1994 |
Barth R, Siewert J, Spangenberg B, Jaekel C, Kurz H, Prusseit W, Kinder H. Free-standing epitaxial YBa2Cu3O7 microbolometers on silicon substrates Cryogenics. 34: 871-874. DOI: 10.1016/S0011-2275(05)80205-X |
0.351 |
|
| 1994 |
Yasuda T, Bjorkman C, Ma Y, Lu Z, Lucovsky G, Emmerichs U, Meyer C, Leo K, Kurz H. Integration of wet-chemical processing with low-temperature plasma-assisted processes for the formation of device-quality Si/SiO2 interfaces on Si(111) surfaces Microelectronic Engineering. 25: 217-222. DOI: 10.1016/0167-9317(94)90018-3 |
0.468 |
|
| 1994 |
Misra V, Hattangady S, Xu XL, Watkins MJ, Hornung B, Lucovsky G, Wortman JJ, Emmerichs U, Meyer C, Leo K, Kurz H. Integrated processing of stacked-gate heterostructures: plasma-assisted low temperature processing combined with rapid thermal high-temperature processing Microelectronic Engineering. 25: 209-214. DOI: 10.1016/0167-9317(94)90017-5 |
0.486 |
|
| 1994 |
Waschke C, Leisching P, Bolivar PH, Schwedler R, Brüggemann F, Roskos HG, Leo K, Kurz H, Köhler K. Detection of Bloch oscillations in a semiconductor superlattice by time-resolved terahertz spectroscopy and degenerate four-wave mixing Solid-State Electronics. 37: 1321-1326. DOI: 10.1016/0038-1101(94)90417-0 |
0.499 |
|
| 1994 |
Hunsche S, Heesel H, Kurz H. Influence of reflectivity on femtosecond transmission spectroscopy of thin GaAs films Optics Communications. 109: 258-264. DOI: 10.1016/0030-4018(94)90690-4 |
0.336 |
|
| 1994 |
Emmerichs U, Bakker H, Kurz H. Generation of high-repetition rate femtosecond pulses tunable in the mid-infrared Optics Communications. 111: 497-501. DOI: 10.1016/0030-4018(94)90526-6 |
0.502 |
|
| 1994 |
Mahrt RF, Lemmer U, Greiner A, Wada Y, Bässler H, Göbel EO, Kersting R, Leo K, Kurz H. Time resolved luminescence spectroscopy of conjugated polymers Journal of Luminescence. 60: 479-481. DOI: 10.1016/0022-2313(94)90196-1 |
0.423 |
|
| 1994 |
Kersting R, Schwedler R, Kohl A, Leo K, Kurz H. Ultrafast carrier dynamics in In1?x Ga x As/InP heterostructures Optical and Quantum Electronics. 26: S705-S718. DOI: 10.1007/Bf00326657 |
0.507 |
|
| 1994 |
Roskos HG, Waschke C, Schwedler R, Leisching P, Dhaibi Y, Kurz H, Köhler K. Bloch oscillations in GaAs/AlGaAs superlattices after excitation well above the bandgap Superlattices and Microstructures. 15: 281-281. DOI: 10.1006/Spmi.1994.1054 |
0.341 |
|
| 1994 |
Schwedler R, Brüggemann F, Ziebell A, Opitz B, Kohl A, Kurz H. Valence band structure of fractional Wannier-Stark effect shallow InGaAs/InGaAs superlattices Superlattices and Microstructures. 15: 145-149. DOI: 10.1006/Spmi.1994.1029 |
0.338 |
|
| 1994 |
Dekorsy T, Leisching P, Beck W, Ott R, Dhaibi Y, Schwedler R, Roskos HG, Kurz H, Köhler K. Internal field dynamics of coherent bloch oscillations in superlattices Superlattices and Microstructures. 15: 11. DOI: 10.1006/Spmi.1994.1003 |
0.333 |
|
| 1993 |
Waschke C, Roskos HG, Schwedler R, Leo K, Kurz H, Köhler K. Coherent submillimeter-wave emission from Bloch oscillations in a semiconductor superlattice. Physical Review Letters. 70: 3319-3322. PMID 10053838 DOI: 10.1103/Physrevlett.70.3319 |
0.489 |
|
| 1993 |
Hunsche S, Heesel H, Ewertz A, Kurz H, Collet JH. Spectral-hole burning and carrier thermalization in GaAs at room temperature. Physical Review. B, Condensed Matter. 48: 17818-17826. PMID 10008412 DOI: 10.1103/Physrevb.48.17818 |
0.342 |
|
| 1993 |
Dekorsy T, Pfeifer T, Kütt W, Kurz H. Subpicosecond carrier transport in GaAs surface-space-charge fields. Physical Review B. 47: 3842-3849. PMID 10006492 DOI: 10.1103/Physrevb.47.3842 |
0.357 |
|
| 1993 |
Esser A, Heesel H, Kurz H, Wang C, Parsons GN, Lucovsky G. Transport properties of optically generated free carriers in hydrogenated amorphous silicon in the femtosecond time regime. Physical Review. B, Condensed Matter. 47: 3593-3597. PMID 10006458 DOI: 10.1103/Physrevb.47.3593 |
0.38 |
|
| 1993 |
Heesel H, Hunsche S, Mikkelsen H, Dekorsy T, Leo K, Kurz H. Dynamics of electric field screening in a bulk GaAs modulator. Physical Review. B, Condensed Matter. 47: 16000-16003. PMID 10006011 DOI: 10.1103/Physrevb.47.16000 |
0.491 |
|
| 1993 |
Hohenester U, Supancic P, Kocevar P, Zhou XQ, Kütt W, Kurz H. Subpicosecond thermalization and relaxation of highly photoexcited electrons and holes in intrinsic and p-type GaAs and InP. Physical Review B. 47: 13233-13245. PMID 10005628 DOI: 10.1103/Physrevb.47.13233 |
0.365 |
|
| 1993 |
Bjorkman CH, Yasuda T, Lucovsky G, Emmerichs U, Meyer C, Leo K, Kurz H. Second-Harmonic Generation: A New Technique for Probing Chemical Bonding on Vicinal Si(III) Surfaces The Japan Society of Applied Physics. DOI: 10.7567/Ssdm.1993.S-Iii-2 |
0.438 |
|
| 1993 |
Yasuda T, Lee DR, Bjorkman CH, Ma Y, Lucovsky G, Emmerichs U, Meyer C, Leo K, Kurz H. A Low-Temperature Process for Device Quality Si/SiO2 Interfaces on Si(111) Mrs Proceedings. 315. DOI: 10.1557/Proc-315-375 |
0.457 |
|
| 1993 |
Dekorsky T, Kütt W, Pfeifer T, Kurz H. Coherent control of LO-phonon dynamics in opaque semiconductors by femtosecond laser pulses Epl. 23: 223-228. DOI: 10.1209/0295-5075/23/3/011 |
0.377 |
|
| 1993 |
Lucovsky G, Bjorkman CH, Yasuda T, Emmerichs U, Meyer C, Leo K, Kurz H. Thermal Relaxation Phenomena in the Formation of Device-Quality SiO2/Si Interfaces Japanese Journal of Applied Physics. 32: 6196-6199. DOI: 10.1143/Jjap.32.6196 |
0.48 |
|
| 1993 |
HUNSCHE S, BAKKER H, KURZ H. TIME-RESOLVED STUDY OF PHONON-POLARITONS IN LiTaO3 AT ROOM TEMPERATURE Modern Physics Letters B. 7: 797-811. DOI: 10.1142/S0217984993000783 |
0.499 |
|
| 1993 |
Bjorkman CH, Shearon CE, Ma Y, Yasuda T, Lucovsky G, Emmerichs U, Meyer C, Leo K, Kurz H. Second‐harmonic generation in Si–SiO2 heterostructures formed by chemical, thermal, and plasma‐assisted oxidation and deposition processes Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 11: 964-970. DOI: 10.1116/1.578576 |
0.47 |
|
| 1993 |
Stephens DJ, He SS, Lucovsky G, Mikkelsen H, Leo K, Kurz H. Effects of thin film deposition rates, and process‐induced interfacial layers on the optical properties of plasma‐deposited SiO2/Si3N4 Bragg reflectors Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 11: 893-899. DOI: 10.1116/1.578323 |
0.503 |
|
| 1993 |
Gondermann J, Kamienski EGSv, Roskos HG, Kurz H. Al-SiO/sub 2/-Al sandwich microstrip lines for high-frequency on-chip interconnects Ieee Transactions On Microwave Theory and Techniques. 41: 2087-2091. DOI: 10.1109/22.260691 |
0.308 |
|
| 1993 |
Esser A, Heesel H, Kurz H, Wang C, Parsons GN, Lucovsky G. Femtosecond spectroscopic study of ultrafast carrier relaxation in hydrogenated amorphous silicon a-Si:H Journal of Applied Physics. 73: 1235-1239. DOI: 10.1063/1.353263 |
0.346 |
|
| 1993 |
Dekorsy T, Kurz H, Zhou XQ, Ploog K. Investigation of field, carrier, and coherent phonon dynamics in low‐temperature grown GaAs Applied Physics Letters. 63: 2899-2901. DOI: 10.1063/1.110291 |
0.355 |
|
| 1993 |
Kersting R, Plettner J, Leo K, Averin S, Kurz H. Time‐resolved luminescence study of ultrafast carrier transport in GaAs metal‐semiconductor‐metal devices Applied Physics Letters. 62: 732-734. DOI: 10.1063/1.108853 |
0.479 |
|
| 1993 |
SCHWEDLER R, BRÜGGEMANN F, OPITZ B, KOHL A, WOLTER K, LEO K, KURZ H. Observation of type-I and type-II Wannier-stark-effect in InGaAs/InGaAs superlattices Le Journal De Physique Iv. 3: 445-448. DOI: 10.1051/Jp4:1993596 |
0.46 |
|
| 1993 |
Schwedler R, Gallmann B, Wolter K, Kohl A, Leo K, Kurz H, Baumann F. Interface properties of strained InGaAs/InP quantum wells grown by low pressure, metallo-organic vapour phase epitaxy Materials Science and Engineering: B. 20: 66-68. DOI: 10.1016/0921-5107(93)90398-7 |
0.489 |
|
| 1993 |
Kohl A, Juillaguet S, Fraisse B, Schwedler R, Royo F, Peyre H, Bruggeman F, Wolter K, Leo K, Kurz H, Camassel J. Growth and characterization of In0.53Ga0.47As/InxGa1−xAs strained-layer superlattices Materials Science and Engineering: B. 21: 244-248. DOI: 10.1016/0921-5107(93)90358-T |
0.439 |
|
| 1993 |
Dekorsy T, Zhou X, Ploog K, Kurz H. Subpicosecond electric field dynamics in low-temperature-grown GaAs observed by reflective electro-optic sampling Materials Science and Engineering: B. 22: 68-71. DOI: 10.1016/0921-5107(93)90225-C |
0.421 |
|
| 1993 |
Schwedler R, Gallmann B, Wolter K, Kohl A, Leo K, Kurz H, Juillaguet S, Massone E, Camassel J, Laurenti JP, Baumann FH. Interface characterization of strained InGaAs/InP quantum wells after a growth interruption sequence Applied Surface Science. 63: 187-190. DOI: 10.1016/0169-4332(93)90087-R |
0.488 |
|
| 1993 |
Langheinrich W, Spangenberg B, Barth R, Kurz H. Superconducting submicron bridges fabricated by electron beam lithography and dry etching Microelectronic Engineering. 21: 479-482. DOI: 10.1016/0167-9317(93)90115-L |
0.333 |
|
| 1993 |
Zettler J-, Mikkelsen H, Trepk T, Leo K, Kurz H, Richter W. Modulated ellipsometry for characterization of multiple quantum wells and superlattices Thin Solid Films. 233: 112-116. DOI: 10.1016/0040-6090(93)90070-6 |
0.491 |
|
| 1993 |
Kurz H, Esser A, Heesel H, Lucovsky G, Wang C, Parsons G. Optical detection of photoconductivity in hydrogenated amorphous silicon, a-Si:H, in the Sub-picosecond time domain Journal of Non-Crystalline Solids. 575-578. DOI: 10.1016/0022-3093(93)90617-7 |
0.34 |
|
| 1993 |
Lemmer U, Rischer R, Feldmann J, Mahrt RF, Yang J, Greiner A, Bässler H, Göbel EO, Heesel H, Kurz H. Time-resolved studies of two-photon absorption processes in poly(p-phenylenevinylene)s Chemical Physics Letters. 203: 28-32. DOI: 10.1016/0009-2614(93)89304-Z |
0.312 |
|
| 1993 |
Albrecht W, Kruse T, Leo K, Kurz H. Oxygen dependence of the fermi-level and electron-phonon coupling constant in YBa2Cu3Ox films Applied Physics A. 56: 463-465. DOI: 10.1007/Bf00332583 |
0.468 |
|
| 1993 |
Albrecht W, Kruse T, Leo K, Kurz H. Dynamics of optically excited quasiparticles in YBa2Cu3O7 Applied Physics A. 57: 203-206. DOI: 10.1007/Bf00331446 |
0.476 |
|
| 1993 |
Schwedler R, Br�ggemann F, Kohl A, Wolter K, Leo K, Kurz H. Type-I and type-II Wannier-Stark effect in InGaAs/InGaAs superlattices Applied Physics a Solids and Surfaces. 57: 199-201. DOI: 10.1007/Bf00331445 |
0.456 |
|
| 1993 |
Trappe C, Schütze M, Raff M, Hannot R, Kurz H. Use of ultrashort laser pulses for desorption from semiconductor surfaces and nonresonant post-ionization of sub-monolayers Fresenius Journal of Analytical Chemistry. 346: 368-373. DOI: 10.1007/Bf00321453 |
0.315 |
|
| 1992 |
Albrecht W, Kruse T, Kurz H. Time-resolved observation of coherent phonons in superconducting YBa 2 Cu 3 O 7 − δ thin films Physical Review Letters. 69: 1451-1454. PMID 10047220 DOI: 10.1103/Physrevlett.69.1451 |
0.336 |
|
| 1992 |
Bakker HJ, Hunsche S, Kurz H. Observation of THz phonon-polariton beats in LiTaO3. Physical Review Letters. 69: 2823-2826. PMID 10046598 DOI: 10.1103/Physrevlett.69.2823 |
0.542 |
|
| 1992 |
Zettler J-, Mikkelsen H, Leo K, Kurz H, Carius R, Förster A. Modulated ellipsometric measurements and transfer-matrix calculation of the field-dependent dielectric function of a multiple quantum well Physical Review B. 46: 15955-15962. PMID 10003736 DOI: 10.1103/Physrevb.46.15955 |
0.503 |
|
| 1992 |
Emmerichs U, Meyer C, Leo K, Kurz H, Bjorkman CH, Shearon CE, Ma Y, Yasuda T, Lucovsky G. Chemically Modified Second Harmonic Generation at Surfaces on Vicinal Si(111) Wafers Mrs Proceedings. 281. DOI: 10.1557/Proc-281-815 |
0.463 |
|
| 1992 |
Stephens DJ, He SS, Lucovsky G, Mkkelsen H, Leo K, Kurz H. The Optical Properties of Plasma-Deposited SiO2 and Si3N4 Bragg Reflectors in the Spectral Range from 1.8 to 3.0 eV Mrs Proceedings. 281. DOI: 10.1557/Proc-281-809 |
0.504 |
|
| 1992 |
Scholz R, Stahl A, Zhou X, Leo K, Kurz H. Subpicosecond hot luminescence in III-V compounds Ieee Journal of Quantum Electronics. 28: 2473-2485. DOI: 10.1109/3.159554 |
0.477 |
|
| 1992 |
Kutt WA, Albrecht W, Kurz H. Generation of coherent phonons in condensed media Ieee Journal of Quantum Electronics. 28: 2434-2444. DOI: 10.1109/3.159550 |
0.396 |
|
| 1992 |
Hohenester U, Supancic P, Kocevar P, Zhou XQ, Lemmer U, Cho GC, Kutt W, Kurz H. Doping dependence of the ultrafast thermalization and relaxation of highly photoexcited carriers in bulk polar semiconductors Semiconductor Science and Technology. 7. DOI: 10.1088/0268-1242/7/3B/043 |
0.366 |
|
| 1992 |
Kurz H. Femtosecond spectroscopy of hot carrier relaxation in bulk semiconductors Semiconductor Science and Technology. 7. DOI: 10.1088/0268-1242/7/3B/029 |
0.387 |
|
| 1992 |
Kutt W, Cho GC, Pfeifer T, Kurz H. Subpicosecond generation and decay of coherent phonons in III-V compounds Semiconductor Science and Technology. 7. DOI: 10.1088/0268-1242/7/3B/018 |
0.35 |
|
| 1992 |
Prusseit W, Corsépius S, Zwerger M, Berberich P, Kinder H, Eibl O, Jaekel C, Breuer U, Kurz H. Epitaxial YBa2Cu3O7−δ films on silicon using combined YSZ/Y2O3 buffer layers: A comprehensive study Physica C-Superconductivity and Its Applications. 201: 249-256. DOI: 10.1016/0921-4534(92)90470-W |
0.302 |
|
| 1992 |
Esser A, Maidorn G, Kurz H. Photoinduced transient reflectance investigation of process-induced near-surface defects in silicon Applied Surface Science. 54: 482-489. DOI: 10.1016/0169-4332(92)90091-B |
0.333 |
|
| 1992 |
Schwedler R, Gallman B, Wolter K, Kohl A, Leo K, Kurz H, Juillaguet S, Camassel J, Laurenti J, Baumann F. Interface properties of strained InGaAs/InP quantum wells grown by LP-MOVPE Microelectronic Engineering. 19: 891-894. DOI: 10.1016/0167-9317(92)90566-A |
0.344 |
|
| 1992 |
Pfeifer T, Dekorsy T, Kütt W, Kurz H. Generation mechanism for coherent LO phonons in surface-space-charge fields of III-V-compounds Applied Physics A. 55: 482-488. DOI: 10.1007/Bf00348337 |
0.344 |
|
| 1992 |
Kersting R, Kohl A, Voss T, Leo K, Kurz H. Ultrafast carrier dynamics in strained In1?xGaxAs/InP heterostructures Applied Physics a Solids and Surfaces. 55: 596-598. DOI: 10.1007/Bf00331679 |
0.467 |
|
| 1991 |
Esser A, Heesel H, Kurz H, Wang C, Williams MJ, Lucovsky G. The role of dangling bond states in the picosecond recovery of photoinduced absorption in a-Si:H Journal of Non-Crystalline Solids. 535-538. DOI: 10.1016/S0022-3093(05)80173-5 |
0.312 |
|
| 1991 |
Kütt W, Cho GC, Strahnen M, Kurz H. Electro-optic sampling of surface space-charge fields on III–V compounds Applied Surface Science. 50: 325-329. DOI: 10.1016/0169-4332(91)90192-M |
0.354 |
|
| 1991 |
Albrecht TF, Seibert K, Kurz H. Chirp measurement of large-bandwidth femtosecond optical pulses using two-photon absorption Optics Communications. 84: 223-227. DOI: 10.1016/0030-4018(91)90076-P |
0.303 |
|
| 1990 |
Esser A, Seibert K, Kurz H, Parsons GN, Wang C, Davidson BN, Lucovsky G, Nemanich RJ. Ultrafast recombination and trapping in amorphous silicon. Physical Review. B, Condensed Matter. 41: 2879-2884. PMID 9994054 DOI: 10.1016/0022-3093(89)90654-6 |
0.331 |
|
| 1990 |
Laurenti JP, Camassel J, Reynes B, Grutzmacher D, Wolter K, Kurz H. Optical properties of GaInAs/InP multi-quantum wells grown by low-pressure MOVPE Semiconductor Science and Technology. 5: 222-228. DOI: 10.1088/0268-1242/5/3/007 |
0.349 |
|
| 1990 |
Kersting R, Zhou XQ, Wolter K, Grützmacher D, Kurz H. Subpicosecond luminescence study of carrier transfer in InGaAs/InP multiple quantum wells Superlattices and Microstructures. 7: 345-348. DOI: 10.1016/0749-6036(90)90223-T |
0.308 |
|
| 1990 |
Esser A, Kütt W, Strahnen M, Maidorn G, Kurz H. Femtosecond transient reflectivity measurements as a probe for process-induced defects in silicon Applied Surface Science. 46: 446-450. DOI: 10.1016/0169-4332(90)90187-5 |
0.303 |
|
| 1990 |
Breuer U, Albrecht W, Kurz H. SNMS studies of high temperature superconductor films on silicon Journal of the Less Common Metals. 1164-1171. DOI: 10.1016/0022-5088(90)90532-O |
0.321 |
|
| 1990 |
Klocke V, Pfau A, Albrecht W, Valder C, Breuer U, Kurz H, Fleuster M, Güntherodt G. Electron-beam evaporation and interface characterization of Bi2Sr2Ca1Cu2Oy thin films on SrTiO3- and Si-substrates Journal of the Less-Common Metals. 164: 671-678. DOI: 10.1016/0022-5088(90)90275-O |
0.311 |
|
| 1989 |
Zhou XQ, Cho GC, Lemmer U, Kütt W, Wolter K, Kurz H. Hot carrier relaxation in InP and GaAs on a subpicosecond time scale Solid-State Electronics. 32: 1591-1595. DOI: 10.1016/0038-1101(89)90279-7 |
0.359 |
|
| 1989 |
Davidson BN, Lucovsky G, Parsons GN, Nemanich RJ, Esser A, Seibert K, Kurz H. Free carrier absorption and the transient optical properties of amorphous silicon thin films: A model including time dependent free carrier, and static and dispersive interband contributions to the complex dielectric constant Journal of Non-Crystalline Solids. 114: 579-581. DOI: 10.1016/0022-3093(89)90656-X |
0.367 |
|
| 1988 |
Kurz H, Kuett W, Seibert K, Strahnen M. Hot carrier relaxation in highly excited III–V compounds Solid-State Electronics. 31: 447-450. DOI: 10.1016/0038-1101(88)90315-2 |
0.33 |
|
| 1985 |
Malvezzi AM, Kurz H, Bloembergen N. Nonlinear photoemission from picosecond irradiated silicon Applied Physics a Solids and Surfaces. 36: 143-146. DOI: 10.1007/BF00624934 |
0.455 |
|
| 1984 |
Lompré LA, Liu JM, Kurz H, Bloembergen N. Optical heating of electron-hole plasma in silicon by picosecond pulses Applied Physics Letters. 44: 3-5. DOI: 10.1063/1.94543 |
0.496 |
|
| 1984 |
Liu JM, Lompre LA, Kurz H, Bloembergen N. Phenomenology of picosecond heating and evaporation of silicon surfaces coated with SiO2 layers Applied Physics a Solids and Surfaces. 34: 25-29. DOI: 10.1007/BF00617570 |
0.449 |
|
| 1983 |
Lompré LA, Liu JM, Kurz H, Bloembergen N. Time-resolved temperature measurement of picosecond laser irradiated silicon Applied Physics Letters. 43: 168-170. DOI: 10.1063/1.94268 |
0.483 |
|
| 1983 |
Kurz H, Liu JM, Bloembergen N. Pulsed laser annealing of semiconductors experimental facts and open questions Physica B+C. 117: 1010-1013. DOI: 10.1016/0378-4363(83)90722-2 |
0.465 |
|
| 1982 |
Liu JM, Kurz H, Bloembergen N. Picosecond time-resolved plasma and temperature-induced changes of reflectivity and transmission in silicon Applied Physics Letters. 41: 643-646. DOI: 10.1063/1.93611 |
0.471 |
|
| 1982 |
Yen R, Liu JM, Kurz H, Bloembergen N. Space-time resolved reflectivity measurements of picosecond laser-pulse induced phase transitions in (111) silicon surface layers Applied Physics a Solids and Surfaces. 27: 153-160. DOI: 10.1007/BF00616666 |
0.492 |
|
| 1981 |
Liu JM, Yen R, Kurz H, Bloembergen N. Phase transformation on and charged particle emission from a silicon crystal surface, induced by picosecond laser pulses Applied Physics Letters. 39: 755-757. DOI: 10.1063/1.92843 |
0.465 |
|
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