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Paolo Paletti - Publications

Affiliations: 
2019 Electrical Engineering University of Notre Dame, Notre Dame, IN, United States 
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5 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2020 Fathipour S, Paletti P, Fullerton-Shirey SK, Seabaugh AC. Electric-double-layer p-i-n junctions in WSe. Scientific Reports. 10: 12890. PMID 32732940 DOI: 10.1038/S41598-020-69523-9  0.603
2020 Liu M, Wei S, Shahi S, Jaiswal HN, Paletti P, Fathipour S, Remškar M, Jiao J, Hwang W, Yao F, Li H. Enhanced carrier transport by transition metal doping in WS field effect transistors. Nanoscale. PMID 32329484 DOI: 10.1039/D0Nr01573C  0.627
2020 Asghari Heidarlou M, Paletti P, Jariwala B, Robinson JA, Fullerton-Shirey SK, Seabaugh AC. Batch-Fabricated WSe₂-on-Sapphire Field-Effect Transistors Grown by Chemical Vapor Deposition Ieee Transactions On Electron Devices. 67: 1839-1844. DOI: 10.1109/Ted.2020.2974450  0.673
2020 Paletti P, Fathipour S, Remškar M, Seabaugh A. Quantitative, experimentally-validated, model of MoS2 nanoribbon Schottky field-effect transistors from subthreshold to saturation Journal of Applied Physics. 127: 65705. DOI: 10.1063/1.5127769  0.603
2018 Lu H, Paletti P, Li W, Fay P, Ytterdal T, Seabaugh A. Tunnel FET Analog Benchmarking and Circuit Design Ieee Journal On Exploratory Solid-State Computational Devices and Circuits. 4: 19-25. DOI: 10.1109/Jxcdc.2018.2817541  0.605
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