Year |
Citation |
Score |
2013 |
Chen Y, Lin YC, Zhong X, Cheng HC, Duan X, Huang Y. Kinetic manipulation of silicide phase formation in Si nanowire templates. Nano Letters. 13: 3703-8. PMID 23795557 DOI: 10.1021/Nl401593F |
0.387 |
|
2012 |
Liu L, Zhou H, Cheng R, Chen Y, Lin YC, Qu Y, Bai J, Ivanov IA, Liu G, Huang Y, Duan X. A systematic study of atmospheric pressure chemical vapor deposition growth of large-area monolayer graphene. Journal of Materials Chemistry. 22: 1498-1503. PMID 25414547 DOI: 10.1039/C1Jm14272K |
0.73 |
|
2012 |
Lin YC, Chen Y, Chen R, Ghosh K, Xiong Q, Huang Y. Crystallinity control of ferromagnetic contacts in stressed nanowire templates and the magnetic domain anisotropy. Nano Letters. 12: 4341-8. PMID 22823105 DOI: 10.1021/Nl302113R |
0.335 |
|
2012 |
Cheng R, Bai J, Liao L, Zhou H, Chen Y, Liu L, Lin YC, Jiang S, Huang Y, Duan X. High-frequency self-aligned graphene transistors with transferred gate stacks. Proceedings of the National Academy of Sciences of the United States of America. 109: 11588-92. PMID 22753503 DOI: 10.1073/Pnas.1205696109 |
0.754 |
|
2012 |
Chen Y, Lin YC, Huang CW, Wang CW, Chen LJ, Wu WW, Huang Y. Kinetic competition model and size-dependent phase selection in 1-D nanostructures. Nano Letters. 12: 3115-20. PMID 22545743 DOI: 10.1021/Nl300990Q |
0.319 |
|
2012 |
Liu G, Lin YC, Liao L, Liu L, Chen Y, Liu Y, Weiss NO, Zhou H, Huang Y, Duan X. Domain wall motion in synthetic Co2Si nanowires. Nano Letters. 12: 1972-6. PMID 22469009 DOI: 10.1021/Nl204510P |
0.39 |
|
2012 |
Lin Y, Chen Y, Huang Y. The growth and applications of silicides for nanoscale devices Nanoscale. 4: 1412-1421. PMID 21987008 DOI: 10.1039/C1Nr10847F |
0.43 |
|
2011 |
Lu KC, Wu WW, Ouyang H, Lin YC, Huang Y, Wang CW, Wu ZW, Huang CW, Chen LJ, Tu KN. The influence of surface oxide on the growth of metal/semiconductor nanowires. Nano Letters. 11: 2753-8. PMID 21657260 DOI: 10.1021/Nl201037M |
0.424 |
|
2011 |
Qu Y, Bai J, Liao L, Cheng R, Lin YC, Huang Y, Guo T, Duan X. Synthesis and electric properties of dicobalt silicide nanobelts. Chemical Communications (Cambridge, England). 47: 1255-7. PMID 21103514 DOI: 10.1039/C0Cc03922E |
0.683 |
|
2010 |
Qu Y, Xue T, Zhong X, Lin YC, Liao L, Choi J, Duan X. Heterointegration of Pt/Si/Ag Nanowire Photodiodes and Their Photocatalytic Properties. Advanced Functional Materials. 20: 3005-3011. PMID 21629399 DOI: 10.1002/Adfm.201000857 |
0.664 |
|
2010 |
Lin YC, Chen Y, Xu D, Huang Y. Growth of nickel silicides in Si and Si/SiOx core/shell nanowires. Nano Letters. 10: 4721-6. PMID 20942385 DOI: 10.1021/Nl103156Q |
0.389 |
|
2010 |
Liao L, Bai J, Cheng R, Lin YC, Jiang S, Qu Y, Huang Y, Duan X. Sub-100 nm channel length graphene transistors. Nano Letters. 10: 3952-6. PMID 20815334 DOI: 10.1021/Nl101724K |
0.757 |
|
2010 |
Liao L, Lin YC, Bao M, Cheng R, Bai J, Liu Y, Qu Y, Wang KL, Huang Y, Duan X. High-speed graphene transistors with a self-aligned nanowire gate. Nature. 467: 305-8. PMID 20811365 DOI: 10.1038/Nature09405 |
0.77 |
|
2010 |
Liao L, Bai J, Lin YC, Qu Y, Huang Y, Duan X. High-performance top-gated graphene-nanoribbon transistors using zirconium oxide nanowires as high-dielectric-constant gate dielectrics. Advanced Materials (Deerfield Beach, Fla.). 22: 1941-5. PMID 20526997 DOI: 10.1002/Adma.200904415 |
0.752 |
|
2010 |
Lin Y, Chen Y, Shailos A, Huang Y. Detection of Spin Polarized Carrier in Silicon Nanowire with Single Crystal MnSi as Magnetic Contacts Nano Letters. 10: 2281-2287. PMID 20499889 DOI: 10.1021/Nl101477Q |
0.426 |
|
2010 |
Liao L, Bai J, Cheng R, Lin YC, Jiang S, Huang Y, Duan X. Top-gated graphene nanoribbon transistors with ultrathin high-k dielectrics. Nano Letters. 10: 1917-21. PMID 20380441 DOI: 10.1021/Nl100840Z |
0.763 |
|
2010 |
Qu Y, Liao L, Cheng R, Wang Y, Lin YC, Huang Y, Duan X. Rational design and synthesis of freestanding photoelectric nanodevices as highly efficient photocatalysts. Nano Letters. 10: 1941-9. PMID 20373781 DOI: 10.1021/Nl101010M |
0.337 |
|
2010 |
Liao L, Bai J, Qu Y, Lin YC, Li Y, Huang Y, Duan X. High-kappa oxide nanoribbons as gate dielectrics for high mobility top-gated graphene transistors. Proceedings of the National Academy of Sciences of the United States of America. 107: 6711-5. PMID 20308584 DOI: 10.1073/Pnas.0914117107 |
0.752 |
|
2009 |
Lin Y, Bai J, Huang Y. Self-aligned nanolithography in a nanogap. Nano Letters. 9: 2234-2238. PMID 19413343 DOI: 10.1021/Nl9000597 |
0.679 |
|
2008 |
Lin YC, Lu KC, Wu WW, Bai J, Chen LJ, Tu KN, Huang Y. Single crystalline PtSi nanowires, PtSi/Si/PtSi nanowire heterostructures, and nanodevices. Nano Letters. 8: 913-8. PMID 18266331 DOI: 10.1021/Nl073279R |
0.712 |
|
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