| Year |
Citation |
Score |
| 2020 |
Lee K, Cho Y, Schowalter LJ, Toita M, Xing HG, Jena D. Surface control and MBE growth diagram for homoepitaxy on single-crystal AlN substrates Applied Physics Letters. 116: 262102. DOI: 10.1063/5.0010813 |
0.485 |
|
| 2020 |
Cho Y, Chang CS, Lee K, Gong M, Nomoto K, Toita M, Schowalter LJ, Muller DA, Jena D, Xing HG. Molecular beam homoepitaxy on bulk AlN enabled by aluminum-assisted surface cleaning Applied Physics Letters. 116: 172106. DOI: 10.1063/1.5143968 |
0.377 |
|
| 2018 |
Moe CG, Sugiyama S, Kasai J, Grandusky JR, Schowalter LJ. AlGaN Light‐Emitting Diodes on AlN Substrates Emitting at 230 nm Physica Status Solidi (a). 215: 1700660. DOI: 10.1002/Pssa.201700660 |
0.37 |
|
| 2011 |
Gibb SR, Grandusky JR, Mendrick M, Schowalter LJ. Performance of pseudomorphic ultraviolet LEDs grown on bulk aluminum nitride substrates International Journal of High Speed Electronics and Systems. 20: 497-504. DOI: 10.1142/S0129156411006787 |
0.395 |
|
| 2011 |
Grandusky JR, Gibb SR, Mendrick M, Schowalter LJ. Reliability and performance of pseudomorphic ultraviolet light emitting diodes on bulk aluminum nitride substrates Physica Status Solidi (C) Current Topics in Solid State Physics. 8: 1528-1533. DOI: 10.1002/Pssc.201000892 |
0.398 |
|
| 2010 |
Grandusky JR, Gibb SR, Mendrick MC, Schowalter LJ. Properties of mid-ultraviolet light emitting diodes fabricated from pseudomorphic layers on bulk aluminum nitride substrates Applied Physics Express. 3. DOI: 10.1143/Apex.3.072103 |
0.39 |
|
| 2010 |
Garrett GA, Sampath AV, Shen H, Wraback M, Sun W, Shatalov M, Hu X, Yang J, Bilenko Y, Lunev A, Shur MS, Gaska R, Grandusky JR, Schowalter LJ. Evaluation of AlGaN-based deep ultraviolet emitter active regions by temperature dependent time-resolved photoluminescence Physica Status Solidi (C) Current Topics in Solid State Physics. 7: 2390-2393. DOI: 10.1002/Pssc.200983906 |
0.311 |
|
| 2010 |
Grandusky J, Cui Y, Gibb S, Mendrick M, Schowalter L. Performance and reliability of ultraviolet-C pseudomorphic light emitting diodes on bulk AlN substrates Physica Status Solidi (C) Current Topics in Solid State Physics. 7: 2199-2201. DOI: 10.1002/Pssc.200983635 |
0.411 |
|
| 2009 |
Grandusky JR, Smart JA, Mendrick MC, Schowalter LJ, Chen KX, Schubert EF. Pseudomorphic growth of thick n-type AlxGa1-xN layers on low-defect-density bulk AlN substrates for UV LED applications Journal of Crystal Growth. 311: 2864-2866. DOI: 10.1016/J.Jcrysgro.2009.01.101 |
0.383 |
|
| 2009 |
Mueller SG, Bondokov RT, Morgan KE, Slack GA, Schujman SB, Grandusky J, Smart JA, Schowalter LJ. The progress of AlN bulk growth and epitaxy for electronic applications Physica Status Solidi (a) Applications and Materials Science. 206: 1153-1159. DOI: 10.1002/Pssa.200880758 |
0.429 |
|
| 2008 |
Bondokov RT, Mueller SG, Morgan KE, Slack GA, Schujman S, Wood MC, Smart JA, Schowalter LJ. Large-area AlN substrates for electronic applications: An industrial perspective Journal of Crystal Growth. 310: 4020-4026. DOI: 10.1016/J.Jcrysgro.2008.06.032 |
0.413 |
|
| 2008 |
Schujman SB, Schowalter LJ, Bondokov RT, Morgan KE, Liu W, Smart JA, Bettles T. Structural and surface characterization of large diameter, crystalline AlN substrates for device fabrication Journal of Crystal Growth. 310: 887-890. DOI: 10.1016/J.Jcrysgro.2007.11.134 |
0.442 |
|
| 2008 |
Mitchel WC, Elhamri S, Landis G, Gaska R, Schujman SB, Schowalter LJ. Electrical characterization of AlGaN/GaN on AlN substrates Physica Status Solidi (C) Current Topics in Solid State Physics. 5: 1550-1552. DOI: 10.1002/Pssc.200778470 |
0.364 |
|
| 2007 |
Kneissl M, Yang Z, Teepe M, Knollenberg C, Schmidt O, Kiesel P, Johnson NM, Schujman S, Schowalter LJ. Ultraviolet semiconductor laser diodes on bulk AlN Journal of Applied Physics. 101. DOI: 10.1063/1.2747546 |
0.323 |
|
| 2007 |
Ren Z, Sun Q, Kwon SY, Han J, Davitt K, Song YK, Nurmikko AV, Liu W, Smart J, Schowalter L. AlGaN deep ultraviolet LEDs on bulk AlN substrates Physica Status Solidi (C) Current Topics in Solid State Physics. 4: 2482-2485. DOI: 10.1002/Pssc.200674758 |
0.308 |
|
| 2006 |
Bondokov RT, Morgan KE, Slack GA, Schowalter LJ. Fabrication and characterization of 2-inch diameter AIN single-crystal wafers cut from bulk crystals Materials Research Society Symposium Proceedings. 955: 22-27. DOI: 10.1557/Proc-0955-I03-08 |
0.448 |
|
| 2006 |
Bondokov RT, Morgan KE, Shetty R, Liu W, Slack GA, Goorsky M, Schowalter LJ. Defect content evaluation in single-crystal AlN wafers Materials Research Society Symposium Proceedings. 892: 763-768. DOI: 10.1557/Proc-0892-Ff30-03 |
0.388 |
|
| 2006 |
Schowalter LJ, Schujman SB, Liu W, Goorsky M, Wood MC, Grandusky J, Shahedipour-Sandvik F. Development of native, single crystal AlN substrates for device applications Physica Status Solidi (a) Applications and Materials Science. 203: 1667-1671. DOI: 10.1002/Pssa.200565385 |
0.447 |
|
| 2005 |
Shahedipour-Sandvik F, Grandusky JR, Jamil M, Jindal V, Schujman SB, Schowalter LJ, Liu R, Ponce FA, Cheung M, Cartwright A. Deep gireenn emissnion at 570nm from InGaN/GaN MQW active region growm on bulk AIN substrate Proceedings of Spie - the International Society For Optical Engineering. 5941: 1-8. DOI: 10.1117/12.617829 |
0.419 |
|
| 2005 |
Biswas SK, Schowalter LJ, Jung YJ, Vijayaraghavan A, Ajayan PM, Vajtai R. Room-temperature resonant tunneling of electrons in carbon nanotube junction quantum wells Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1915528 |
0.546 |
|
| 2005 |
Silveira E, Freitas JA, Slack GA, Schowalter LJ, Kneissl M, Treat DW, Johnson NM. Depth-resolved cathodoluminescence of a homoepitaxial AlN thin film Journal of Crystal Growth. 281: 188-193. DOI: 10.1016/J.Jcrysgro.2005.03.024 |
0.395 |
|
| 2004 |
Silveira E, Freitas JA, Kneissl M, Treat DW, Johnson NM, Slack GA, Schowalter LJ. Near-bandedge cathodoluminescence of an AIN homoepitaxial film Applied Physics Letters. 84: 3501-3503. DOI: 10.1063/1.1738929 |
0.391 |
|
| 2004 |
Biswas SK, Vajtai R, Wei B, Meng G, Schowalter LJ, Ajayan PM. Vertically aligned conductive carbon nanotube junctions and arrays for device applications Applied Physics Letters. 84: 2889-2891. DOI: 10.1063/1.1702130 |
0.53 |
|
| 2003 |
Biswas SK, Schujman SB, Vajtai R, Wei B, Parker A, Schowalter LJ, Ajayan PM. AFM-based electrical characterization of nano-structures Materials Research Society Symposium - Proceedings. 738: 331-337. DOI: 10.1557/Proc-761-Nn6.2/G9.2 |
0.511 |
|
| 2003 |
Tamulaitis G, Yilmaz I, Shur MS, Gaska R, Chen C, Yang J, Kuokstis E, Khan A, Schujman SB, Schowalter LJ. Photoluminescence of GaN deposited on single-crystal bulk AlN with different polarities Applied Physics Letters. 83: 3507-3509. DOI: 10.1063/1.1623322 |
0.352 |
|
| 2003 |
Shusterman YV, Yakovlev NL, Dovidenko K, Schowalter LJ. Growth and structure of epitaxial Al and Cu films on CaF2 Thin Solid Films. 443: 23-27. DOI: 10.1016/S0040-6090(03)00927-1 |
0.777 |
|
| 2003 |
Raghothamachar B, Dudley M, Rojo JC, Morgan K, Schowalter LJ. X-ray characterization of bulk AIN single crystals grown by the sublimation technique Journal of Crystal Growth. 250: 244-250. DOI: 10.1016/S0022-0248(02)02253-4 |
0.359 |
|
| 2003 |
Schowalter LJ, Slack GA, Whitlock JB, Morgan K, Schujman SB, Raghothamachar B, Dudley M, Evans KR. Fabrication of native, single-crystal AlN substrates Physica Status Solidi C: Conferences. 1997-2000. DOI: 10.1002/Pssc.200303462 |
0.415 |
|
| 2003 |
Silveira E, Freitas JA, Slack GA, Schowalter LJ. Cathodoluminescence studies of large bulk AlN crystals Physica Status Solidi C: Conferences. 2618-2622. DOI: 10.1002/Pssc.200303286 |
0.384 |
|
| 2002 |
Hu X, Gaska R, Chen C, Yang J, Kuokstis E, Khan A, Tamulaitis G, Yilmaz I, Shur MS, Rojo JC, Schowalter LJ. Growth and characterization of deep UV emitter structures grown on single crystal bulk AlN substrates Materials Research Society Symposium - Proceedings. 743: 439-443. DOI: 10.1557/Proc-743-L6.30 |
0.411 |
|
| 2002 |
Tamulaitis G, Yilmaz I, Shur MS, Gaska R, Chen C, Yang J, Kuokstis E, Khan A, Rojo JC, Schowalter LJ. The influence of substrate surface polarity on optical properties of GaN grown on single crystal bulk AlN Materials Research Society Symposium - Proceedings. 743: 193-199. DOI: 10.1557/Proc-743-L3.34 |
0.349 |
|
| 2002 |
Rojo JC, Schowalter LJ, Slack G, Morgan K, Barani J, Schujman S, Biswas S, Raghothamachar B, Dudley M, Shur M, Gaska R, Johnson NM, Kneissl M. Progress in the preparation of aluminum nitride substrates from bulk crystals Materials Research Society Symposium - Proceedings. 722: 5-13. DOI: 10.1557/Proc-722-K1.1 |
0.565 |
|
| 2002 |
Schujman SB, Vajtai R, Shusterman Y, Biswas S, Dewhirst B, Schowalter LJ, Wei BQ, Ajayan PM. AFM-based surface potential measurements on carbon nanotubes Materials Research Society Symposium - Proceedings. 706: 377-382. DOI: 10.1557/Proc-706-Z11.10.1 |
0.738 |
|
| 2002 |
Gaska R, Chen C, Yang J, Kuokstis E, Khan A, Tamulaitis G, Yilmaz I, Shur MS, Rojo JC, Schowalter LJ. Deep-ultraviolet emission of AlGaN/AIN quantum wells on bulk AIN Applied Physics Letters. 81: 4658-4660. DOI: 10.1063/1.1524034 |
0.383 |
|
| 2002 |
Kuokstis E, Zhang J, Fareed Q, Yang JW, Simin G, Khan MA, Gaska R, Shur M, Rojo C, Schowalter L. Near-band-edge photoluminescence of wurtzite-type AlN Applied Physics Letters. 81: 2755-2757. DOI: 10.1063/1.1510586 |
0.343 |
|
| 2002 |
Schujman SB, Vajtai R, Biswas S, Dewhirst B, Schowalter LJ, Ajayan P. Electrical behavior of isolated multiwall carbon nanotubes characterized by scanning surface potential microscopy Applied Physics Letters. 81: 541-543. DOI: 10.1063/1.1490401 |
0.531 |
|
| 2002 |
Carlos Rojo J, Schowalter LJ, Gaska R, Shur M, Khan MA, Yang J, Koleske DD. Growth and characterization of epitaxial layers on aluminum nitride substrates prepared from bulk, single crystals Journal of Crystal Growth. 240: 508-512. DOI: 10.1016/S0022-0248(02)01078-3 |
0.46 |
|
| 2001 |
Rojo JC, Schowalter LJ, Morgan K, Florescu DI, Pollak FH, Raghothamachar B, Dudley M. Single-crystal aluminum nitride substrate preparation from bulk crystals Materials Research Society Symposium Proceedings. 680: 1-7. DOI: 10.1557/Proc-680-E2.7 |
0.319 |
|
| 2001 |
Shusterman YV, Yakovlev NL, Dovidenko K, Schowalter LJ. Epitaxial Al and Cu films grown on CaF2/Si(111) Materials Research Society Symposium - Proceedings. 648: P11381-P11386. DOI: 10.1557/Proc-648-P11.38 |
0.76 |
|
| 2001 |
Rojo JC, Slack GA, Morgan K, Schowalter LJ, Dudley M. Growth of self-seeded aluminum nitride by sublimation-recondensation and substrate preparation Materials Research Society Symposium - Proceedings. 639: G1.10.1-G1.10.6. DOI: 10.1557/Proc-639-G1.10 |
0.362 |
|
| 2001 |
Shusterman YV, Yakovlev NL, Schowalter LJ. Ultra-thin epitaxial Al and Cu films on CaF2/Si(1 1 1) Applied Surface Science. 175: 27-32. DOI: 10.1016/S0169-4332(01)00033-2 |
0.782 |
|
| 2001 |
Yakovlev NL, Rojo JC, Schowalter LJ. Morphology of facets on vapor-grown AIN crystals Surface Science. 493: 519-525. DOI: 10.1016/S0039-6028(01)01261-4 |
0.416 |
|
| 2001 |
Carlos Rojo J, Slack GA, Morgan K, Raghothamachar B, Dudley M, Schowalter LJ. Report on the growth of bulk aluminum nitride and subsequent substrate preparation Journal of Crystal Growth. 231: 317-321. DOI: 10.1016/S0022-0248(01)01452-X |
0.401 |
|
| 2000 |
Schowalter LJ, Rojo JC, Yakolev N, Shusterman Y, Dovidenko K, Wang R, Bhat I, Slack GA. Preparation and characterization of single-crystal aluminum nitride substrates Materials Research Society Symposium - Proceedings. 595: W671-W676. DOI: 10.1557/S1092578300004622 |
0.737 |
|
| 2000 |
Schowalter LJ, Rojo JC, Slack GA, Shusterman Y, Wang R, Bhat I, Arunmozhi G. Epitaxial growth of AlN and Al0.5Ga0.5N layers on aluminum nitride substrates Journal of Crystal Growth. 211: 78-81. DOI: 10.1016/S0022-0248(99)00778-2 |
0.769 |
|
| 1999 |
Schowalter LJ, Shusterman Y, Wang R, Bhat I, Aninmozhi G, Slack OA. Epitaxial growth of hi-nitride layers on aluminum nitride substrates Materials Research Society Symposium - Proceedings. 537: G3.76. DOI: 10.1557/S1092578300002817 |
0.766 |
|
| 1999 |
Kaveev AK, Kyutt RN, Moisseeva MM, Schowalter LJ, Shusterman YV, Sokolov NS, Suturin SM, Yakovlev NL. Molecular beam epitaxy and characterization of CdF2 layers on CaF2(1 1 1) Journal of Crystal Growth. 201: 1105-1108. DOI: 10.1016/S0022-0248(98)01536-X |
0.78 |
|
| 1999 |
Schowalter LJ, Shusterman Y, Wang R, Bhat I, Arunmozhi G, Slack GA. Epitaxial growth of III-Nitride layers on aluminum nitride substrates Mrs Internet Journal of Nitride Semiconductor Research. 4: 6d. |
0.754 |
|
| 1998 |
Labella VP, Shusterman Y, Schowalter LJ, Ventrice CA. Measurements of epitaxially grown Pt/CaF2/Si(111) structures by ballistic electron emission microscopy and scanning tunneling microscopy Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 16: 1692-1696. DOI: 10.1116/1.581286 |
0.794 |
|
| 1998 |
Lee BC, Khilko AY, Shusterman YV, Yakovlev NL, Sokolov NS, Kyutt RN, Suturin SM, Schowalter LJ. Structural and electrical characterization of epitaxial CdF2 layers grown on Si(111) and CaF2(111) substrates Applied Surface Science. 123: 590-594. DOI: 10.1016/S0169-4332(97)00574-6 |
0.797 |
|
| 1998 |
LaBella VP, Ventrice CA, Schowalter LJ. Ballistic electron emission microscopy measurements of epitaxially grown Pt/CaF2/Si(111) structures Applied Surface Science. 123: 213-218. DOI: 10.1016/S0169-4332(97)00543-6 |
0.702 |
|
| 1997 |
Lu H, Bhat IB, Lee B, Slack GA, Schowalter LJ. MOCVD Growth of GaN on bulk AlN Substrates Mrs Proceedings. 482: 277. DOI: 10.1557/Proc-482-277 |
0.482 |
|
| 1997 |
Khilko AY, Kyutt RN, Mosina GN, Sokolov NS, Shusterman YV, Schowalter LJ. Structural studies of epitaxial CdF2 layers on Si(111) Materials Research Society Symposium - Proceedings. 441: 457-462. DOI: 10.1557/Proc-441-457 |
0.769 |
|
| 1997 |
Deelman PW, Schowalter LJ, Thundat T. In-situ measurements of islanding and strain relaxation of Ge/Si(111) Materials Research Society Symposium - Proceedings. 441: 373-378. DOI: 10.1557/Proc-441-373 |
0.384 |
|
| 1997 |
LaBella VP, Schowalter LJ, Ventrice CA. Scanning tunneling microscopy and ballistic electron emission spectroscopy studies of molecular beam epitaxially grown Pt/CaF2/Si(111) structures Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 15: 1191-1195. DOI: 10.1116/1.589437 |
0.706 |
|
| 1997 |
Ventrice CA, LaBella VP, Schowalter LJ. Design of a scanning tunneling microscope for in situ topographic and spectroscopic measurements within a commercial molecular beam epitaxy machine Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 15: 830-835. DOI: 10.1116/1.580716 |
0.687 |
|
| 1997 |
Deelman PW, Schowalter LJ, Thundat T. In situ measurements of temperature-dependent strain relaxation of Ge/Si(111) Journal of Vacuum Science and Technology. 15: 930-935. DOI: 10.1116/1.580626 |
0.418 |
|
| 1997 |
Persans PD, Deelman PW, Stokes KL, Schowalter LJ, Byrne A, Thundat T. Optical studies of Ge islanding on Si(111) Applied Physics Letters. 70: 472-474. DOI: 10.1063/1.118169 |
0.369 |
|
| 1997 |
Schujman SB, Soss SR, Stokes K, Schowalter LJ. Self-assembled InAs islands on GaAs(1̄1̄1̄) substrates Surface Science. 385. DOI: 10.1016/S0039-6028(97)00387-7 |
0.359 |
|
| 1997 |
Schowalter LJ, Kim BM, Thundat TG, Ventrice CA, LaBella VP. Effect of strain relaxation mechanisms on the electrical properties of epitaxial CaF2/Si(111) heterostructures Materials Research Society Symposium - Proceedings. 466: 21-26. |
0.638 |
|
| 1996 |
Ventrice CA, LaBella VP, Ramaswamy G, Yu H, Schowalter LJ. Measurement of hot-electron scattering processes at Au/Si(100) Schottky interfaces by temperature-dependent ballistic-electron-emission microscopy. Physical Review. B, Condensed Matter. 53: 3952-3959. PMID 9983947 DOI: 10.1103/Physrevb.53.3952 |
0.679 |
|
| 1996 |
Kushibe M, Shusterman YV, Yakovlev NL, Schowalter LJ. Slow Decay of Reflection High Energy Electron Diffraction Oscillations in Cal1-xMgxF2 Mrs Proceedings. 441. DOI: 10.1557/Proc-441-45 |
0.721 |
|
| 1996 |
Stokes KL, Deelman P, Kang HS, Schowalter LJ, Persans PD. Photomodulation spectroscopy of thin Ge films formed by molecular beam epitaxy on Si (111) Materials Research Society Symposium - Proceedings. 417: 165-168. DOI: 10.1557/Proc-417-165 |
0.416 |
|
| 1996 |
Deelman PW, Schowalter LJ, Thundat T. Temperature-dependent strain relaxation and islanding of Ge/Si(111) Materials Research Society Symposium - Proceedings. 417: 227-232. DOI: 10.1557/Proc-399-295 |
0.376 |
|
| 1996 |
Kim BM, Soss SR, Overney RM, Schowalter LJ. Effect of substrate misorientation on the evolution of surface morphology in epitaxially grown CaF2/Si(111) heterostructures Materials Research Society Symposium - Proceedings. 399: 177-182. DOI: 10.1557/Proc-399-177 |
0.527 |
|
| 1996 |
Ventrice CA, LaBella VP, Ramaswamy G, Yu HP, Schowalter LJ. Hot-electron scattering at Au/Si(100) Schottky interfaces measured by temperature dependent ballistic electron emission microscopy Applied Surface Science. 104: 274-281. DOI: 10.1016/S0169-4332(96)00215-2 |
0.696 |
|
| 1996 |
Deelman PW, Thundat T, Schowalter LJ. AFM and RHEED study of Ge islanding on Si(111) and Si(100) Applied Surface Science. 104: 510-515. DOI: 10.1016/S0169-4332(96)00195-X |
0.468 |
|
| 1996 |
Kim BM, Ventrice CA, Mercer T, Overney R, Schowalter LJ. Molecular beam epitaxial growth of thin CaF2 films on vicinal Si(111) surfaces Applied Surface Science. 104: 409-416. DOI: 10.1016/S0169-4332(96)00179-1 |
0.493 |
|
| 1995 |
Rodrigues RG, Yang K, Schowalter LJ, Borrego JM. Laser-aided measurements of electric fields on III-V semiconductor structures using modulation spectroscopy: solar cell P-N junctions and [111] strained layer superlattices Materials Science Forum. 173: 355-360. DOI: 10.4028/Www.Scientific.Net/Msf.173-174.355 |
0.307 |
|
| 1995 |
Li W, Thundat T, Anan T, Schowalter LJ. Surface morphology of epitaxial CaF2/Si(111) and its influence on subsequent GaAs epitaxy Journal of Vacuum Science & Technology B. 13: 670-673. DOI: 10.1116/1.587938 |
0.501 |
|
| 1994 |
Wu Z, Arakawa ET, Inagaki T, Thundat T, Schowalter LJ. Experimental observations of a long-range surface mode in metal island films. Physical Review. B, Condensed Matter. 49: 7782-7785. PMID 10009531 DOI: 10.1103/Physrevb.49.7782 |
0.322 |
|
| 1994 |
Deelman PW, Thundat T, Schowalter LJ. Ge Nanocrystals Grown on Si(111) by Molecular Beam Epitaxy with and without CaF 2 Buffer Layers Mrs Proceedings. 358. DOI: 10.1557/Proc-358-139 |
0.478 |
|
| 1994 |
Rodrigues RG, Yang K, Schowalter LJ, Borrego JM. Photoreflectance characterization of InGaAs/GaAs superlattices grown on [111]-oriented substrates Materials Research Society Symposium Proceedings. 324: 217-223. DOI: 10.1557/Proc-324-217 |
0.43 |
|
| 1994 |
Turner BR, Schowalter LJ, Lee EY, Jimenez JR. Study of PtSi/Si(100) interfaces by ballistic-electron-emission microscopy Materials Research Society Symposium Proceedings. 320: 217-220. DOI: 10.1557/Proc-320-217 |
0.432 |
|
| 1994 |
Schowalter LJ, Yang K, Thundat T, .Orr B. Atomic step organization in homoepitaxial growth on GaAs(111)B substrates Scanning Microscopy. 8: 889-896. DOI: 10.1116/1.587805 |
0.395 |
|
| 1994 |
Li W, Anan T, Schowalter LJ. Molecular beam epitaxial growth of GaAs on CaF2/Si(111) substrate Journal of Vacuum Science & Technology B. 12: 1067-1070. DOI: 10.1116/1.587089 |
0.487 |
|
| 1994 |
Yang K, Anan T, Schowalter LJ. Strain in pseudomorphic films grown on arbitrarily oriented substrates Applied Physics Letters. 65: 2789-2791. DOI: 10.1063/1.112564 |
0.355 |
|
| 1994 |
Li W, Anan T, Schowalter LJ. Nucleation of GaAs on CaF2/Si(111) substrates Applied Physics Letters. 65: 595-597. DOI: 10.1063/1.112310 |
0.474 |
|
| 1994 |
Li W, Anan T, Schowalter LJ. Optimization of GaAs epitaxy on CaF2/Si(111) substrates Journal of Crystal Growth. 135: 78-84. DOI: 10.1016/0022-0248(94)90728-5 |
0.503 |
|
| 1993 |
Wu Z, Arakawa ET, Jimenez JR, Schowalter LJ. Optical properties of epitaxial CoSi2 on Si from 0.062 to 22.3 eV. Physical Review. B, Condensed Matter. 47: 4356-4362. PMID 10006582 DOI: 10.1103/Physrevb.47.4356 |
0.36 |
|
| 1993 |
Li W, Anan T, Thundat T, Schowalter LJ. Initiation and Evolution of Epitaxial Growth of GaAs on CaF2/Si (111) Substrates Mrs Proceedings. 317. DOI: 10.1557/Proc-317-59 |
0.464 |
|
| 1993 |
Li W, Hymes S, Murarka SP, Schowalter LJ. Barriers to Strain Relaxation in Epitaxial Fluorides on Si(111) Mrs Proceedings. 308: 451. DOI: 10.1557/Proc-308-451 |
0.383 |
|
| 1993 |
Taylor AP, Kim BM, Persans PD, Schowalter LJ. Si and Ge nanocrystallites embedded in CaF2 by molecular beam epitaxy (MBE) Materials Research Society Symposium Proceedings. 298: 103-107. DOI: 10.1557/Proc-298-103 |
0.456 |
|
| 1993 |
Taylor AP, Stokes K, Wu ZC, Persans PD, Schowalter LJ, LeGoues FK. Nanocrystallites of Si embedded in CaF2 by molecular beam epitaxy (MBE) Materials Research Society Symposium Proceedings. 283: 71-75. DOI: 10.1557/Proc-283-71 |
0.376 |
|
| 1993 |
Lee EY, Turner BR, Schowalter LJ, Jimenez JR. Diffusive and inelastic scattering in ballistic-electron-emission spectroscopy and ballistic-electron-emission microscopy Journal of Vacuum Science & Technology B. 11: 1579-1583. DOI: 10.1116/1.586973 |
0.419 |
|
| 1993 |
Yang K, Schowalter LJ, Laurich BK, Campell IH, Smith DL. Molecular‐beam epitaxy on exact and vicinal GaAs(1̄1̄1̄) substrates Journal of Vacuum Science & Technology B. 11: 779-782. DOI: 10.1116/1.586787 |
0.413 |
|
| 1993 |
Schowalter LJ, Li W. Residual strains in epitaxial fluorides on Si(111) substrates Applied Physics Letters. 62: 696-698. DOI: 10.1063/1.108843 |
0.425 |
|
| 1992 |
Lee EY, Schowalter LJ. Electron-hole pair creation and metal/semiconductor interface scattering observed by ballistic-electron-emission microscopy. Physical Review. B, Condensed Matter. 45: 6325-6328. PMID 10000391 DOI: 10.1103/Physrevb.45.6325 |
0.366 |
|
| 1992 |
Yang K, Schowalter LJ, Thundat TG. Estimation of Surface Diffusion Length from AFM Images of Faceted GaAs( 1 1 1 ) Homoepitaxial Films Mrs Proceedings. 280: 143. DOI: 10.1557/Proc-280-143 |
0.385 |
|
| 1992 |
Schowalter LJ, Taylor AP, Petruzzello J, Gaines J, Olego D. Control of threading dislocations in lattice-mismatched heteroepitaxy Mrs Proceedings. 263: 485-490. DOI: 10.1557/Proc-263-485 |
0.38 |
|
| 1992 |
Li W, Taylor AP, Schowalter LJ. Strain Relief in SrF 2 Epitaxial Films on Si(111) Substrates Mrs Proceedings. 263: 433. DOI: 10.1557/Proc-263-433 |
0.452 |
|
| 1992 |
Yang K, Schowalter LJ. Films Grown on Vicinal GaAs(111) Substrates By Molecular Beam Epitaxy Mrs Proceedings. 263: 151-156. DOI: 10.1557/Proc-263-151 |
0.4 |
|
| 1992 |
Schowalter LJ, Lee EY, Turner BR, Jimenez JR. Fundamental studies of Schottkybarrier infrared detectors by ballistic-electron-emission microscopy Proceedings of Spie. 1683: 152-157. DOI: 10.1117/12.137768 |
0.439 |
|
| 1992 |
Wu ZC, Arakawa ET, Jimenez JR, Schowalter LJ. Optical properties of epitaxial CoSi2/Si and CoSi2 particles in Si from 0.062 to 2.76 eV Journal of Applied Physics. 71: 5601-5605. DOI: 10.1063/1.350539 |
0.392 |
|
| 1992 |
Ayers JE, Schowalter LJ, Ghandhi SK. Post-growth thermal annealing of GaAs on Si(001) grown by organometallic vapor phase epitaxy Journal of Crystal Growth. 125: 329-335. DOI: 10.1016/0022-0248(92)90346-K |
0.484 |
|
| 1991 |
Yang K, Schowalter LJ, Laurich BK, Smith DL. Growth of GaAs, InxGa1−xAs, and AlxGa1−xAs on GaAs (111)B Substrates by Molecular Beam Epitaxy Mrs Proceedings. 240. DOI: 10.1557/Proc-240-265 |
0.363 |
|
| 1991 |
Yang K, Li W, Taylor AP, Xiao Q-, Schowalter LJ, Laurich BK, Smith DL. Growth Condition Dependence Of Rheed Pattern From GaAs (111)B Surface Mrs Proceedings. 228: 261. DOI: 10.1557/Proc-228-261 |
0.339 |
|
| 1991 |
Xiao QF, Jimenez JR, Schowalter LJ, Luo L, Mitchell TE, Gibson WM. Epitaxial growth of silicon on CoSi2(001)/Si(001) Mrs Proceedings. 220. DOI: 10.1557/Proc-220-519 |
0.437 |
|
| 1991 |
Rajan K, Hsiung LM, Jimenez JR, Schowalter LJ, Ramanathan KV, Thompson RD, Iyer SS. Microstructural stability of epitaxial CoSi2/Si (001) interfaces Journal of Applied Physics. 70: 4853-4856. DOI: 10.1063/1.349026 |
0.474 |
|
| 1991 |
Luo L, Muenchausen RE, Maggiore CJ, Jimenez JR, Schowalter LJ. Growth of YBa2Cu3O7-x thin films on Si with a CoSi2 buffer layer Applied Physics Letters. 58: 419-421. DOI: 10.1063/1.104655 |
0.343 |
|
| 1991 |
Schowalter LJ, Jimenez JR, Hsiung LM, Rajan K, Hashimoto S, Thompson RD, Iyer SS. Control of misoriented grains and pinholes in CoSi2 grown on Si(001) Journal of Crystal Growth. 111: 948-956. DOI: 10.1016/0022-0248(91)91113-O |
0.451 |
|
| 1991 |
Ayers JE, Ghandhi SK, Schowalter LJ. Crystallographic tilting of heteroepitaxial layers Journal of Crystal Growth. 113: 430-440. DOI: 10.1016/0022-0248(91)90077-I |
0.36 |
|
| 1990 |
Ayers JE, Ghandhi SK, Schowalter LJ. Threading Dislocation Densities in Mismatched Heteroepitaxial (001) Semiconductors Mrs Proceedings. 209: 661. DOI: 10.1557/Proc-209-661 |
0.353 |
|
| 1990 |
Schowalter LJ, Ayers JE, Ghandhi SK, Hashimoto S, Gibson WM, LeGoues FK, Claxton PA. Strain in epitaxial GaAs on CaF2/Si(111) Journal of Vacuum Science & Technology B. 8: 246-249. DOI: 10.1116/1.584819 |
0.465 |
|
| 1990 |
Schowalter LJ, Hall EL, Lewis N, Shin Hashimoto. Strain relief of large lattice mismatch heteroepitaxial films on silicon by tilting Thin Solid Films. 184: 437-445. DOI: 10.1016/0040-6090(90)90442-G |
0.471 |
|
| 1989 |
Zegenhagen J, Huang K, Gibson WM, Hunt BD, Schowalter LJ. Structural properties of epitaxial NiSi2 on Si(111) investigated with x-ray standing waves. Physical Review. B, Condensed Matter. 39: 10254-10260. PMID 9947807 DOI: 10.1103/Physrevb.39.10254 |
0.341 |
|
| 1989 |
Schowalter LJ, Ayers JE, Ghandhi SK, Hashimoto S, Gibson WM, LeGoues FK, Claxton PA. Strain in Epitaxial GaAs on CaF 2 /Si(111) Mrs Proceedings. 160. DOI: 10.1557/Proc-160-527 |
0.45 |
|
| 1989 |
Jimenez JR, Hsiung LM, Thompson RD, Hashimoto S, Ramanathan KV, Arndt R, Rajan K, Iyer SS, Schowalter LJ. Growth and Characterization of Epitaxial CoSi 2 on Si(001) Mrs Proceedings. 160: 237. DOI: 10.1557/Proc-160-237 |
0.439 |
|
| 1989 |
Schowalter LJ, Fathauer RW. Growth and characterization of single crystal insulators on silicon Critical Reviews in Solid State and Materials Sciences. 15: 367-421. DOI: 10.1080/10408438908243740 |
0.38 |
|
| 1989 |
Jimenez JR, Wu ZC, Schowalter LJ, Hunt BD, Fathauer RW, Grunthaner PJ, Lin TL. Optical properties of epitaxial CoSi2 and NiSi2 films on silicon Journal of Applied Physics. 66: 2738-2741. DOI: 10.1063/1.344217 |
0.366 |
|
| 1989 |
Abedin MN, Schowalter LJ, Das P. Transverse acoustoelectric voltage measurements of GaAs grown directly on (100) Si substrates Journal of Applied Physics. 66: 4218-4222. DOI: 10.1063/1.343961 |
0.334 |
|
| 1989 |
Hashimoto S, Gibson WM, Schowalter LJ, Lee EY, Claxton PA. Reduction of strain in GaAs grown on CaF2/Si heteroepitaxial substrates Journal of Crystal Growth. 95: 403-404. DOI: 10.1016/0022-0248(89)90429-6 |
0.428 |
|
| 1988 |
Tromp RM, LeGoues FK, Krakow W, Schowalter LJ. Structural characterization of the Si(111)-CaF2 interface by high-resolution transmission electron microscopy. Physical Review Letters. 61: 2274. PMID 10039034 DOI: 10.1103/Physrevlett.61.2274 |
0.317 |
|
| 1988 |
Schowalter LJ, Hall EL, Lewis N, Hashimoto S. Strain Relief by Tilting of Epitaxial GaAs Films on Si Mrs Proceedings. 130: 171. DOI: 10.1557/Proc-130-171 |
0.452 |
|
| 1988 |
Schowalter LJ. Heteroepitaxy on Silicon by Molecular Beam Epitaxy Mrs Proceedings. 116. DOI: 10.1557/Proc-116-3 |
0.319 |
|
| 1988 |
Hashimoto S, Schowalter LJ, Smith GA, Lee EY, Gibson WM, Claxton PA. Reduction of Strain in Epitaxial GaAs on CaF 2 /Si Substrates Mrs Proceedings. 116: 257. DOI: 10.1557/Proc-116-257 |
0.427 |
|
| 1987 |
Schowalter LJ, Hashimoto S, Smith GA, Gibson WM, Lewis N, Hall EL, Sullivan PW. Strain in Epitaxial GaAs on Si and CaF2/Si Mrs Proceedings. 102. DOI: 10.1557/Proc-102-449 |
0.474 |
|
| 1987 |
Fathauer RW, Hunt BD, Schowalter LJ. Summary Abstract: Molecular‐beam epitaxy of insulator/metal/silicon structures: CaF2/NiSi2/Si(111) and CaF2/CoSi2/Si(111) Journal of Vacuum Science & Technology B. 5: 743-743. DOI: 10.1116/1.583779 |
0.413 |
|
| 1987 |
Zegenhagen J, Huang KG, Hunt BD, Schowalter LJ. Interface structure and lattice mismatch of epitaxial CoSi2 on Si(111) Applied Physics Letters. 51: 1176-1178. DOI: 10.1063/1.98724 |
0.309 |
|
| 1986 |
Hashimoto S, Schowalter LJ, Gibson WM, Fathauer RW. Summary Abstract: MeV ion channeling study of CaF2/Si(111) epitaxy Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 4: 901-902. DOI: 10.1116/1.574003 |
0.323 |
|
| 1986 |
Chrenko RM, Schowalter LJ, Turner LG, DeBlois RW. Summary Abstract: p‐type doping of Si molecular beam epitaxy layers using a Ga liquid metal ion source Journal of Vacuum Science and Technology. 4: 999-1000. DOI: 10.1116/1.573774 |
0.37 |
|
| 1986 |
Fathauer RW, Hunt BD, Schowalter LJ, Okamoto M, Hashimoto S. Heteroepitaxy of insulator/metal/silicon structures: CaF 2/NiSi2/Si(111) and CaF2/CoSi 2/Si(111) Applied Physics Letters. 49: 64-66. DOI: 10.1063/1.97353 |
0.514 |
|
| 1986 |
Fathauer RW, Lewis N, Hall EL, Schowalter LJ. Heteroepitaxy of semiconductor-on-insulator structures: Si and Ge on CaF2/Si(111) Journal of Applied Physics. 60: 3886-3894. DOI: 10.1063/1.337561 |
0.483 |
|
| 1986 |
Hunt BD, Lewis N, Hall EL, Turner LG, Schowalter LJ, Okamoto M, Hashimoto S. GROWTH AND CHARACTERIZATION OF EPITAXIAL Si/CoSi//2 AND Si/CoSi//2/Si HETEROSTRUCTURES Materials Research Society Symposia Proceedings. 56: 151-156. |
0.311 |
|
| 1985 |
Okamoto M, Hashimoto S, Hunt BD, Schowalter LJ, Gibson WM. STRAIN MEASUREMENT IN EPITAXIAL NiSi 2 /Si(lll) BY MeV ION CHANNELING Mrs Proceedings. 56. DOI: 10.1557/Proc-56-157 |
0.399 |
|
| 1985 |
Hunt BD, Schowalter LJ, Lewis N, Hall EL, Hauenstein RJ, Schlesrnger TE, McGill TC, Okamoto M, Hashimoto S. Structural Characterization and Schottky Barrier Height Measurements of Epitaxial NiSi2 on Si Mrs Proceedings. 54. DOI: 10.1557/Proc-54-479 |
0.416 |
|
| 1985 |
Fathauer RW, Schowalter LJ, Lewis N, Hall EL. Heteroepitaxy of Si and Ge on CaF2/Si (111) Mrs Proceedings. 54. DOI: 10.1557/Proc-54-313 |
0.393 |
|
| 1985 |
Fathauer RW, Lewis N, Schowalter LJ, Hall EL. Electron microscopy of epitaxial Si/CaF2/Si structures Journal of Vacuum Science & Technology B. 3: 736-738. DOI: 10.1116/1.583129 |
0.496 |
|
| 1985 |
Hashimoto S, Peng JL, Gibson WM, Schowalter LJ, Fathauer RW. Strain measurement of epitaxial CaF2 on Si (111) by MeV ion channeling Applied Physics Letters. 47: 1071-1073. DOI: 10.1063/1.96383 |
0.42 |
|
| 1985 |
Schowalter LJ, Fathauer RW, Goehner RP, Turner LG, Deblois RW, Hashimoto S, Peng JL, Gibson WM, Krusius JP. Epitaxial growth and characterization of CaF2 on Si Journal of Applied Physics. 58: 302-308. DOI: 10.1063/1.335676 |
0.461 |
|
| 1985 |
Fathauer RW, Schowalter LJ, Lewis N, Hall EL. EPITAXIAL GROWTH OF Si AND Ge ON HETEROEPITAXIAL CaF//2/Si STRUCTURES Proceedings - the Electrochemical Society. 85: 277-284. |
0.328 |
|
| 1984 |
Schowalter LJ, Steranka FM, Salamon MB, Wolfe JP. Evidence for separate Mott and liquid-gas transitions in photoexcited, strained germanium Physical Review B. 29: 2970-2985. DOI: 10.1103/Physrevb.29.2970 |
0.401 |
|
| 1984 |
Fathauer RW, Schowalter LJ. Surface morphology of epitaxial CaF2 films on Si substrates Applied Physics Letters. 45: 519-521. DOI: 10.1063/1.95299 |
0.342 |
|
| 1984 |
Schowalter LJ, Fathauer RW, DeBlois RW, Turner LG, Krusius JP. EPITAXIAL INSULATING FILMS OF CaF//2 ON Si Proceedings - the Electrochemical Society. 84: 448-454. |
0.313 |
|
| 1982 |
Schowalter LJ, Steranka FM, Salamon MB, Wolfe JP. Separate Mott and liquid-gas transitions in a coulomb gas: Photoexcited germanium Solid State Communications. 44: 795-799. DOI: 10.1016/0038-1098(82)90276-9 |
0.435 |
|
| 1981 |
Schowalter LJ, Steranka FM, Salamon MB, Wolfe JP. Long lifetimes of excitons in stressed Ge Solid State Communications. 37: 319-324. DOI: 10.1016/0038-1098(81)90368-9 |
0.449 |
|
| 1977 |
Schowalter LJ, Salamon MB, Tsuei CC, Craven RA. The critical specific heat of a glassy ferromagnet Solid State Communications. 24: 525-529. DOI: 10.1016/0038-1098(77)90155-7 |
0.41 |
|
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