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Vinod K. Sangwan, Ph.D. - Publications

Affiliations: 
Physics University of Maryland, College Park, College Park, MD 
Area:
Nanostructures
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63 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2023 Rangnekar SV, Sangwan VK, Jin M, Khalaj M, Szydłowska BM, Dasgupta A, Kuo L, Kurtz HE, Marks TJ, Hersam MC. Electroluminescence from Megasonically Solution-Processed MoS Nanosheet Films. Acs Nano. PMID 37606956 DOI: 10.1021/acsnano.3c06034  0.311
2023 Bradshaw NP, Hirani Z, Kuo L, Li S, Williams NX, Sangwan VK, Chaney LE, Evans AM, Dichtel WR, Hersam MC. Aerosol-Jet-Printable Covalent Organic Framework Colloidal Inks and Temperature-Sensitive Nanocomposite Films. Advanced Materials (Deerfield Beach, Fla.). e2303673. PMID 37288981 DOI: 10.1002/adma.202303673  0.333
2020 Zhu W, Spencer AP, Mukherjee S, Alzola JM, Sangwan VK, Amsterdam SH, Swick SM, Jones LO, Heiber MC, Herzing AA, Li G, Stern CL, DeLongchamp DM, Kohlstedt KL, Hersam MC, et al. Crystallography, Morphology, Electronic Structure, and Transport in non-Fullerene/non-Indacenodithienothiophene Polymer:Y6 Solar Cells. Journal of the American Chemical Society. PMID 32698577 DOI: 10.1021/Jacs.0C05560  0.382
2020 Beck ME, Shylendra A, Sangwan VK, Guo S, Gaviria Rojas WA, Yoo H, Bergeron H, Su K, Trivedi AR, Hersam MC. Spiking neurons from tunable Gaussian heterojunction transistors. Nature Communications. 11: 1565. PMID 32218433 DOI: 10.1038/S41467-020-15378-7  0.351
2020 Sangwan VK, Hersam MC. Neuromorphic nanoelectronic materials. Nature Nanotechnology. PMID 32123381 DOI: 10.1038/S41565-020-0647-Z  0.384
2020 Li S, Zhong C, Henning A, Sangwan VK, Zhou Q, Liu X, Rahn MS, Wells SA, Park HY, Luxa J, Sofer Z, Facchetti A, Darancet P, Marks TJ, Lauhon LJ, et al. Molecular-Scale Characterization of Photoinduced Charge Separation in Mixed-Dimensional InSe-Organic van der Waals Heterostructures. Acs Nano. PMID 32078300 DOI: 10.1021/Acsnano.9B09661  0.337
2020 Moraes ACMd, Obrzut J, Sangwan VK, Downing JR, Chaney LE, Patel DK, Elmquist RE, Hersam MC. Elucidating Charge Transport Mechanisms in Cellulose-Stabilized Graphene Inks Journal of Materials Chemistry C. DOI: 10.1039/D0Tc03309J  0.372
2020 Sangwan VK, Kang J, Lam D, Gish JT, Wells SA, Luxa J, Male JP, Snyder GJ, Sofer Z, Hersam MC. Intrinsic carrier multiplication in layered Bi 2 O 2 Se avalanche photodiodes with gain bandwidth product exceeding 1 GHz Nano Research. 1-6. DOI: 10.1007/S12274-020-3059-3  0.34
2019 Sangwan VK, Zhu M, Clark S, Luck KA, Marks TJ, Kanatzidis MG, Hersam MC. Low Frequency Carrier Kinetics in Perovskite Solar Cells. Acs Applied Materials & Interfaces. PMID 30896169 DOI: 10.1021/Acsami.9B03884  0.303
2019 Seo JT, Zhu J, Sangwan VK, Secor EB, Wallace SG, Hersam MC. Fully Inkjet-Printed, Mechanically Flexible MoS2 Nanosheet Photodetectors. Acs Applied Materials & Interfaces. PMID 30693759 DOI: 10.1021/Acsami.8B19817  0.428
2019 Sangwan VK, Kang J, Hersam MC. Thickness-dependent charge transport in exfoliated indium selenide vertical field-effect transistors Applied Physics Letters. 115: 243104. DOI: 10.1063/1.5128808  0.415
2019 Liu X, Balla I, Sangwan VK, Usta H, Facchetti A, Marks TJ, Hersam MC. Ultrahigh Vacuum Self-Assembly of Rotationally Commensurate C8-BTBT/MoS2/Graphene Mixed-Dimensional Heterostructures Chemistry of Materials. 31: 1761-1766. DOI: 10.1021/Acs.Chemmater.8B05348  0.369
2018 Chen Y, Huang W, Sangwan VK, Wang B, Zeng L, Wang G, Huang Y, Lu Z, Bedzyk MJ, Hersam MC, Marks TJ, Facchetti A. Polymer Doping Enables a Two-Dimensional Electron Gas for High-Performance Homojunction Oxide Thin-Film Transistors. Advanced Materials (Deerfield Beach, Fla.). e1805082. PMID 30499146 DOI: 10.1002/Adma.201805082  0.36
2018 Wells SA, Henning A, Gish JT, Sangwan VK, Lauhon LJ, Hersam MC. Suppressing Ambient Degradation of Exfoliated InSe Nanosheet Devices via Seeded Atomic Layer Deposition Encapsulation. Nano Letters. PMID 30418785 DOI: 10.1021/Acs.Nanolett.8B03689  0.389
2018 Islam SM, Sangwan VK, Li Y, Kang J, Zhang X, He Y, Zhao J, Murthy AA, Ma S, Dravid VP, Hersam MC, Kanatzidis MG. Abrupt Thermal Shock of (NH4)2Mo3S13 Leads to Ultrafast Synthesis of Porous Ensembles of MoS2 Nanocrystals for High Gain Photodetectors. Acs Applied Materials & Interfaces. PMID 30299078 DOI: 10.1021/Acsami.8B12406  0.364
2018 Kang J, Wells SA, Sangwan VK, Lam D, Liu X, Luxa J, Sofer Z, Hersam MC. Solution-Based Processing of Optoelectronically Active Indium Selenide. Advanced Materials (Deerfield Beach, Fla.). e1802990. PMID 30095182 DOI: 10.1002/Adma.201802990  0.418
2018 Senanayak SP, Sangwan V, McMorrow JJ, Everaerts K, Chen Z, Facchetti A, Hersam MC, Marks TJ, Narayan KS. Self-Assembled Photochromic Molecular Dipoles for High Performance Polymer Thin-Film Transistors. Acs Applied Materials & Interfaces. PMID 29847908 DOI: 10.1021/Acsami.8B05401  0.406
2018 Zhong C, Sangwan VK, Wang C, Bergeron H, Hersam MC, Weiss EA. Mechanisms of Ultrafast Charge Separation in a PTB7/Monolayer MoS van der Waals Heterojunction. The Journal of Physical Chemistry Letters. PMID 29688016 DOI: 10.1021/Acs.Jpclett.8B00628  0.345
2018 Henning A, Sangwan VK, Bergeron H, Balla I, Sun Z, Hersam MC, Lauhon LJ. Charge Separation at Mixed-Dimensional Single and Multilayer MoS/Silicon Nanowire Heterojunctions. Acs Applied Materials & Interfaces. PMID 29682958 DOI: 10.1021/Acsami.8B03133  0.352
2018 Sangwan VK, Lee HS, Bergeron H, Balla I, Beck ME, Chen KS, Hersam MC. Multi-terminal memtransistors from polycrystalline monolayer molybdenum disulfide. Nature. 554: 500-504. PMID 29469093 DOI: 10.1038/Nature25747  0.352
2018 Sangwan VK, Hersam MC. Electronic Transport in Two-Dimensional Materials. Annual Review of Physical Chemistry. PMID 29463170 DOI: 10.1146/Annurev-Physchem-050317-021353  0.352
2018 Sangwan VK, Beck ME, Henning A, Luo J, Bergeron H, Kang J, Balla I, Inbar H, Lauhon L, Hersam MC. Self-Aligned van der Waals Heterojunction Diodes and Transistors. Nano Letters. PMID 29385342 DOI: 10.1021/Acs.Nanolett.7B05177  0.402
2018 Kang J, Sangwan VK, Lee H, Liu X, Hersam MC. Solution-Processed Layered Gallium Telluride Thin-Film Photodetectors Acs Photonics. 5: 3996-4002. DOI: 10.1021/Acsphotonics.8B01066  0.369
2017 Behranginia A, Yasaei P, Majee AK, Sangwan VK, Long F, Foss CJ, Foroozan T, Fuladi S, Hantehzadeh MR, Shahbazian-Yassar R, Hersam MC, Aksamija Z, Salehi-Khojin A. Direct Growth of High Mobility and Low-Noise Lateral MoS2 -Graphene Heterostructure Electronics. Small (Weinheim An Der Bergstrasse, Germany). PMID 28626881 DOI: 10.1002/Smll.201604301  0.405
2017 Chen KS, Xu R, Luu NS, Secor EB, Hamamoto K, Li Q, Kim S, Sangwan VK, Balla I, Guiney LM, Seo JT, Yu X, Liu W, Wu J, Wolverton C, et al. Comprehensive Enhancement of Nanostructured Lithium-Ion Battery Cathode Materials via Conformal Graphene Dispersion. Nano Letters. PMID 28240911 DOI: 10.1021/Acs.Nanolett.7B00274  0.316
2017 Kang J, Sangwan VK, Wood JD, Hersam MC. Solution-Based Processing of Monodisperse Two-Dimensional Nanomaterials. Accounts of Chemical Research. PMID 28240855 DOI: 10.1021/Acs.Accounts.6B00643  0.345
2017 Bettis Homan S, Sangwan VK, Balla I, Bergeron H, Weiss EA, Hersam MC. Ultrafast Exciton Dissociation and Long-Lived Charge Separation in a Photovoltaic Pentacene-MoS2 van der Waals Heterojunction. Nano Letters. 17: 164-169. PMID 28073273 DOI: 10.1021/Acs.Nanolett.6B03704  0.328
2017 Wang K, Stanev TK, Valencia D, Charles J, Henning A, Sangwan VK, Lahiri A, Mejia D, Sarangapani P, Povolotskyi M, Afzalian A, Maassen J, Klimeck G, Hersam MC, Lauhon LJ, et al. Control of interlayer physics in 2H transition metal dichalcogenides Journal of Applied Physics. 122: 224302. DOI: 10.1063/1.5005958  0.331
2017 McMorrow JJ, Cress CD, Arnold HN, Sangwan VK, Jariwala D, Schmucker SW, Marks TJ, Hersam MC. Vacuum ultraviolet radiation effects on two-dimensional MoS2 field-effect transistors Applied Physics Letters. 110: 073102. DOI: 10.1063/1.4976023  0.369
2017 Bergeron H, Sangwan VK, McMorrow JJ, Campbell GP, Balla I, Liu X, Bedzyk MJ, Marks TJ, Hersam MC. Chemical vapor deposition of monolayer MoS2 directly on ultrathin Al2O3 for low-power electronics Applied Physics Letters. 110: 053101. DOI: 10.1063/1.4975064  0.411
2016 Arnold HN, Sangwan VK, Schmucker SW, Cress CD, Luck KA, Friedman AL, Robinson JT, Marks TJ, Hersam MC. Reducing flicker noise in chemical vapor deposition graphene field-effect transistors Applied Physics Letters. 108. DOI: 10.1063/1.4942468  0.33
2015 Jariwala D, Howell S, Chen KS, Kang J, Sangwan VK, Filippone SA, Turrisi R, Marks TJ, Lauhon LJ, Hersam MC. Hybrid, Gate-Tunable, van der Waals p-n Heterojunctions from Pentacene and MoS2. Nano Letters. PMID 26651229 DOI: 10.1021/Acs.Nanolett.5B04141  0.374
2015 McMorrow JJ, Walker A, Sangwan VK, Jariwala D, Hoffman EE, Everaerts K, Facchetti A, Hersam MC, Marks TJ. Solution-Processed Self-Assembled Nanodielectrics on Template-Stripped Metal Substrates. Acs Applied Materials & Interfaces. PMID 26479833 DOI: 10.1021/Acsami.5B07744  0.429
2015 Sangwan VK, Jariwala D, Kim IS, Chen KS, Marks TJ, Lauhon LJ, Hersam MC. Gate-tunable memristive phenomena mediated by grain boundaries in single-layer MoS2. Nature Nanotechnology. 10: 403-6. PMID 25849785 DOI: 10.1038/Nnano.2015.56  0.385
2015 Howell SL, Jariwala D, Wu CC, Chen KS, Sangwan VK, Kang J, Marks TJ, Hersam MC, Lauhon LJ. Investigation of band-offsets at monolayer-multilayer MoS₂ junctions by scanning photocurrent microscopy. Nano Letters. 15: 2278-84. PMID 25807012 DOI: 10.1021/Nl504311P  0.374
2015 Jariwala D, Sangwan VK, Seo JW, Xu W, Smith J, Kim CH, Lauhon LJ, Marks TJ, Hersam MC. Large-area, low-voltage, antiambipolar heterojunctions from solution-processed semiconductors. Nano Letters. 15: 416-21. PMID 25438195 DOI: 10.1021/Nl5037484  0.465
2015 Senanayak SP, Sangwan VK, McMorrow JJ, Everaerts K, Chen Z, Facchetti A, Hersam MC, Marks TJ, Narayan KS. Self-Assembled Nanodielectrics for High-Speed, Low-Voltage Solution-Processed Polymer Logic Circuits Advanced Electronic Materials. 1. DOI: 10.1002/Aelm.201500226  0.384
2014 Wood JD, Wells SA, Jariwala D, Chen KS, Cho E, Sangwan VK, Liu X, Lauhon LJ, Marks TJ, Hersam MC. Effective passivation of exfoliated black phosphorus transistors against ambient degradation. Nano Letters. 14: 6964-70. PMID 25380142 DOI: 10.1021/Nl5032293  0.343
2014 Kim IS, Sangwan VK, Jariwala D, Wood JD, Park S, Chen KS, Shi F, Ruiz-Zepeda F, Ponce A, Jose-Yacaman M, Dravid VP, Marks TJ, Hersam MC, Lauhon LJ. Influence of stoichiometry on the optical and electrical properties of chemical vapor deposition derived MoS2. Acs Nano. 8: 10551-8. PMID 25223821 DOI: 10.1021/Nn503988X  0.377
2014 Jariwala D, Sangwan VK, Lauhon LJ, Marks TJ, Hersam MC. Emerging device applications for semiconducting two-dimensional transition metal dichalcogenides. Acs Nano. 8: 1102-20. PMID 24476095 DOI: 10.1021/Nn500064S  0.386
2014 Sangwan VK, Jariwala D, Everaerts K, McMorrow JJ, He J, Grayson M, Lauhon LJ, Marks TJ, Hersam MC. Wafer-scale solution-derived molecular gate dielectrics for low-voltage graphene electronics Applied Physics Letters. 104. DOI: 10.1063/1.4866387  0.412
2014 Sangwan V, Ballarotto V, Hines D, Fuhrer M, Williams E. Corrigendum to “Controlled growth, patterning and placement of carbon nanotube thin films” [Solid-State Electron. 54 (2010) 1204–1210] Solid-State Electronics. 93: 66. DOI: 10.1016/J.Sse.2013.07.002  0.677
2013 Jariwala D, Sangwan VK, Wu CC, Prabhumirashi PL, Geier ML, Marks TJ, Lauhon LJ, Hersam MC. Gate-tunable carbon nanotube-MoS2 heterojunction p-n diode. Proceedings of the National Academy of Sciences of the United States of America. 110: 18076-80. PMID 24145425 DOI: 10.1073/Pnas.1317226110  0.436
2013 Sangwan VK, Arnold HN, Jariwala D, Marks TJ, Lauhon LJ, Hersam MC. Low-frequency electronic noise in single-layer MoS2 transistors. Nano Letters. 13: 4351-5. PMID 23944940 DOI: 10.1021/Nl402150R  0.318
2013 Everaerts K, Emery JD, Jariwala D, Karmel HJ, Sangwan VK, Prabhumirashi PL, Geier ML, McMorrow JJ, Bedzyk MJ, Facchetti A, Hersam MC, Marks TJ. Ambient-processable high capacitance hafnia-organic self-assembled nanodielectrics. Journal of the American Chemical Society. 135: 8926-39. PMID 23688160 DOI: 10.1021/Ja4019429  0.411
2013 Sangwan VK, Jariwala D, Filippone SA, Karmel HJ, Johns JE, Alaboson JM, Marks TJ, Lauhon LJ, Hersam MC. Quantitatively enhanced reliability and uniformity of high-κ dielectrics on graphene enabled by self-assembled seeding layers. Nano Letters. 13: 1162-7. PMID 23387502 DOI: 10.1021/Nl3045553  0.364
2013 Behnam A, Sangwan VK, Zhong X, Lian F, Estrada D, Jariwala D, Hoag AJ, Lauhon LJ, Marks TJ, Hersam MC, Pop E. High-field transport and thermal reliability of sorted carbon nanotube network devices. Acs Nano. 7: 482-90. PMID 23259715 DOI: 10.1021/Nn304570U  0.404
2013 Jariwala D, Sangwan VK, Lauhon LJ, Marks TJ, Hersam MC. Carbon nanomaterials for electronics, optoelectronics, photovoltaics, and sensing. Chemical Society Reviews. 42: 2824-60. PMID 23124307 DOI: 10.1039/C2Cs35335K  0.43
2013 Shastry TA, Seo JW, Lopez JJ, Arnold HN, Kelter JZ, Sangwan VK, Lauhon LJ, Marks TJ, Hersam MC. Large-area, electronically monodisperse, aligned single-walled carbon nanotube thin films fabricated by evaporation-driven self-assembly. Small (Weinheim An Der Bergstrasse, Germany). 9: 45-51. PMID 22987547 DOI: 10.1002/Smll.201201398  0.455
2013 Tselev A, Sangwan VK, Jariwala D, Marks TJ, Lauhon LJ, Hersam MC, Kalinin SV. Near-field microwave microscopy of high-κ oxides grown on graphene with an organic seeding layer Applied Physics Letters. 103. DOI: 10.1063/1.4847675  0.398
2013 Jariwala D, Sangwan VK, Late DJ, Johns JE, Dravid VP, Marks TJ, Lauhon LJ, Hersam MC. Band-like transport in high mobility unencapsulated single-layer MoS 2 transistors Applied Physics Letters. 102. DOI: 10.1063/1.4803920  0.317
2013 Sczygelski E, Sangwan VK, Wu CC, Arnold HN, Everaerts K, Marks TJ, Hersam MC, Lauhon LJ. Extrinsic and intrinsic photoresponse in monodisperse carbon nanotube thin film transistors Applied Physics Letters. 102. DOI: 10.1063/1.4793519  0.444
2013 Wu CC, Jariwala D, Sangwan VK, Marks TJ, Hersam MC, Lauhon LJ. Elucidating the photoresponse of ultrathin MoS2 field-effect transistors by scanning photocurrent microscopy Journal of Physical Chemistry Letters. 4: 2508-2513. DOI: 10.1021/Jz401199X  0.364
2012 Sangwan VK, Ortiz RP, Alaboson JM, Emery JD, Bedzyk MJ, Lauhon LJ, Marks TJ, Hersam MC. Fundamental performance limits of carbon nanotube thin-film transistors achieved using hybrid molecular dielectrics. Acs Nano. 6: 7480-8. PMID 22783918 DOI: 10.1021/Nn302768H  0.511
2011 Sangwan VK, Southard A, Moore TL, Ballarotto VW, Hines DR, Fuhrer MS, Williams ED. Transfer printing approach to all-carbon nanoelectronics Microelectronic Engineering. 88: 3150-3154. DOI: 10.1016/J.Mee.2011.06.017  0.743
2010 Sangwan VK, Ballarotto VW, Siegrist K, Williams ED. Characterizing voltage contrast in photoelectron emission microscopy. Journal of Microscopy. 238: 210-7. PMID 20579259 DOI: 10.1111/J.1365-2818.2009.03342.X  0.687
2010 Sangwan VK, Behnam A, Ballarotto VW, Fuhrer MS, Ural A, Williams ED. Optimizing transistor performance of percolating carbon nanotube networks Applied Physics Letters. 97. DOI: 10.1063/1.3469930  0.555
2010 Sangwan VK, Ballarotto VW, Hines DR, Fuhrer MS, Williams ED. Controlled growth, patterning and placement of carbon nanotube thin films Solid-State Electronics. 54: 1204-1210. DOI: 10.1016/j.sse.2010.05.027  0.634
2009 Southard A, Sangwan V, Cheng J, Williams ED, Fuhrer MS. Solution-processed single walled carbon nanotube electrodes for organic thin-film transistors Organic Electronics: Physics, Materials, Applications. 10: 1556-1561. DOI: 10.1016/J.Orgel.2009.09.001  0.583
2008 Sangwan VK, Ballarotto VW, Fuhrer MS, Williams ED. Facile fabrication of suspended as-grown carbon nanotube devices Applied Physics Letters. 93. DOI: 10.1063/1.2987457  0.593
2007 Hines DR, Southard AE, Sangwan V, Chen JH, Fuhrer MS, Williams ED. Organic and carbon-based electronics printed onto flexible substrates 2007 International Semiconductor Device Research Symposium, Isdrs. DOI: 10.1109/ISDRS.2007.4422520  0.631
2006 Sangwan VK, Hines DR, Ballarotto VW, Esen G, Fuhrer MS, Williams ED. Patterned Carbon Nanotube Thin-Film Transistors with Transfer-Print Assembly Mrs Proceedings. 963: 94-100. DOI: 10.1557/Proc-0963-Q10-57  0.639
2006 Sangwan VK, Hines DR, Ballarotto VW, Esen G, Fuhrer MS, Williams ED. Patterned carbon nanotube thin-film transistors with transfer-print assembly Materials Research Society Symposium Proceedings. 963: 94-100.  0.657
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