| Year |
Citation |
Score |
| 2019 |
Forchel A, Cebulla U, Tränkle G, Lach E, Reinecke TL, Kroemer H, Subbanna S, Griffiths G. 2Eg transitions in GaSb-AlSb quantum-well structures. Physical Review Letters. 57: 3217-3220. PMID 10033987 DOI: 10.1103/Physrevlett.57.3217 |
0.362 |
|
| 2019 |
Santos PV, Etchegoin P, Cardona M, Brar B, Kroemer H. Optical anisotropy in InAs/AlSb superlattices. Physical Review. B, Condensed Matter. 50: 8746-8754. PMID 9974895 DOI: 10.1103/Physrevb.50.8746 |
0.326 |
|
| 2019 |
Tränkle G, Lach E, Forchel A, Scholz F, Ell C, Haug H, Weimann G, Griffiths G, Kroemer H, Subbanna S. General relation between band-gap renormalization and carrier density in two-dimensional electron-hole plasmas. Physical Review. B, Condensed Matter. 36: 6712-6714. PMID 9942395 DOI: 10.1103/Physrevb.36.6712 |
0.322 |
|
| 2014 |
Hurni CA, Kroemer H, Mishra UK, Speck JS. M-plane (1010) and (2021) GaN/AlxGa1-xN conduction band offsets measured by capacitance-voltage profiling Applied Physics Letters. 105. DOI: 10.1063/1.4903180 |
0.312 |
|
| 2012 |
Kroemer H. Self-inflicted weirdness Physics World. 25: 21-21. DOI: 10.1088/2058-7058/25/08/31 |
0.347 |
|
| 2012 |
Hurni CA, Kroemer H, Mishra UK, Speck JS. Capacitance-voltage profiling on polar III-nitride heterostructures Journal of Applied Physics. 112. DOI: 10.1063/1.4757940 |
0.302 |
|
| 2008 |
Masui H, Kroemer H, Schmidt MC, Kim KC, Fellows NN, Nakamura S, DenBaars SP. Electroluminescence efficiency of (1 0 1̄ 0)-oriented InGaN-based light-emitting diodes at low temperature Journal of Physics D: Applied Physics. 41. DOI: 10.1088/0022-3727/41/8/082001 |
0.344 |
|
| 2004 |
Kroemer H. The 6.1 Å family (InAs, GaSb, AlSb) and its heterostructures: a selective review Physica E-Low-Dimensional Systems & Nanostructures. 20: 196-203. DOI: 10.1016/J.Physe.2003.08.003 |
0.435 |
|
| 2003 |
Kroemer H. Speculations about future directions Journal of Crystal Growth. 251: 17-22. DOI: 10.1016/S0022-0248(02)02199-1 |
0.37 |
|
| 2002 |
Kroemer H. Quasi-Electric Fields And Band Offsets: Teaching Electrons New Tricks International Journal of Modern Physics B. 16: 677-697. DOI: 10.1142/S0217979202010245 |
0.309 |
|
| 2001 |
Nakagawa S, Hall E, Almuneau G, Kim JK, Buell DA, Kroemer H, Coldren LA. 1.55-μm InP-lattice-matched VCSELs with AlGaAsSb-AlAsSb DBRs Ieee Journal On Selected Topics in Quantum Electronics. 7: 224-230. DOI: 10.1109/2944.954134 |
0.367 |
|
| 2000 |
Brosig S, Ensslin K, Jansen AG, Nguyen C, Brar B, Thomas M, Kroemer H. InAs-AlSb quantum wells in tilted magnetic fields Physical Review B. 61: 13045-13049. DOI: 10.1103/Physrevb.61.13045 |
0.333 |
|
| 2000 |
Eckhause TA, Tsujino S, Lehnert KW, Gwinn EG, Allen SJ, Thomas M, Kroemer H. Midinfrared studies of the contact region at superconductor–semiconductor interfaces Applied Physics Letters. 76: 215-217. DOI: 10.1063/1.125706 |
0.398 |
|
| 2000 |
Warburton RJ, Weilhammer K, Jabs C, Kotthaus JP, Thomas M, Kroemer H. Collective effects in intersubband transitions Physica E-Low-Dimensional Systems & Nanostructures. 7: 191-199. DOI: 10.1016/S1386-9477(99)00285-4 |
0.332 |
|
| 2000 |
Eckhause TA, Tsujino S, Gwinn EG, Thomas M, Kroemer H. Intersubband absorption in Nb-clad InAs quantum wells Physica E: Low-Dimensional Systems and Nanostructures. 6: 856-859. DOI: 10.1016/S1386-9477(99)00231-3 |
0.394 |
|
| 1999 |
Lehnert KW, Argaman N, Blank H, Wong KC, Allen SJ, Hu EL, Kroemer H. Nonequilibrium ac Josephson Effect in Mesoscopic Nb-InAs-Nb Junctions Physical Review Letters. 82: 1265-1268. DOI: 10.1103/Physrevlett.82.1265 |
0.329 |
|
| 1999 |
Brosig S, Ensslin K, Warburton RJ, Nguyen C, Brar B, Thomas M, Kroemer H. Zero-field spin splitting in InAs-AlSb quantum wells revisited Physical Review B. 60. DOI: 10.1103/Physrevb.60.R13989 |
0.374 |
|
| 1999 |
Bhargava S, Blank HR, Hall E, Chin MA, Kroemer H, Narayanamurti V. Staggered to straddling band lineups in InAs/Al(As, Sb) Applied Physics Letters. 74: 1135-1137. DOI: 10.1063/1.123466 |
0.326 |
|
| 1999 |
Hall E, Almuneau G, Kim J, Sjölund O, Kroemer H, Coldren L. Electrically-pumped, single-epitaxial VCSELs at 1.55 [micro sign]m with Sb-based mirrors Electronics Letters. 35: 1337. DOI: 10.1049/El:19990965 |
0.336 |
|
| 1999 |
Lehnert KW, Argaman N, Blank HR, Wong KC, Allen SJ, Hu EL, Kroemer H. Nonequilibrium supercurrents in mesoscopic Nb-InAs-Nb junctions Microelectronic Engineering. 47: 377-379. DOI: 10.1016/S0167-9317(99)00238-5 |
0.32 |
|
| 1999 |
Hall E, Kroemer H. Surface morphology of GaSb grown on (1 1 1)B GaAs by molecular beam epitaxy Journal of Crystal Growth. 203: 297-301. DOI: 10.1016/S0022-0248(99)00132-3 |
0.33 |
|
| 1999 |
Kroemer H. Quasiparticle dynamics in ballistic weak links under weak voltage bias: an elementary treatment Superlattices and Microstructures. 25: 877-889. DOI: 10.1006/Spmi.1999.0704 |
0.336 |
|
| 1998 |
Thomas M, Blank H, Wong KC, Kroemer H, Hu E. Current-voltage characteristics of semiconductor-coupled superconducting weak links with large electrode separations Physical Review B. 58: 11676-11684. DOI: 10.1103/Physrevb.58.11676 |
0.351 |
|
| 1998 |
Brar B, Kroemer H. Hole Transport Across The (Al,Ga)(As,Sb) Barrier In Inas-(Al,Ga)(As,Sb) Heterostructures Journal of Applied Physics. 83: 894-899. DOI: 10.1063/1.366774 |
0.342 |
|
| 1998 |
Rosa JC, Wendel M, Lorenz H, Kotthaus JP, Thomas M, Kroemer H. Direct patterning of surface quantum wells with an atomic force microscope Applied Physics Letters. 73: 2684-2686. DOI: 10.1063/1.122553 |
0.34 |
|
| 1998 |
Thomas M, Kroemer H, Blank H, Wong KC. Induced superconductivity and residual resistance in InAs quantum wells contacted with superconducting Nb electrodes Physica E-Low-Dimensional Systems & Nanostructures. 2: 894-898. DOI: 10.1016/S1386-9477(98)00182-9 |
0.354 |
|
| 1998 |
Kroemer H. Supercurrent flow through a semiconductor: the transport properties of superconductor–semiconductor hybrid structures Physica E-Low-Dimensional Systems & Nanostructures. 2: 887-893. DOI: 10.1016/S1386-9477(98)00181-7 |
0.338 |
|
| 1998 |
Rubin ME, Blank HR, Chin MA, Kroemer H, Narayanamurti V. Imaging and local transport measurements of GaSb self-assembled quantum dots on GaAs Physica E: Low-Dimensional Systems and Nanostructures. 2: 682-684. DOI: 10.1016/S1386-9477(98)00139-8 |
0.389 |
|
| 1998 |
Brosig S, Ensslin K, Brar B, Thomas M, Kroemer H. Scattering mechanisms in InAs-AlSb quantum wells Physica E-Low-Dimensional Systems & Nanostructures. 2: 214-217. DOI: 10.1016/S1386-9477(98)00046-0 |
0.382 |
|
| 1998 |
Brosig S, Ensslin K, Brar B, Thomas M, Kroemer H. Landau and spin levels in InAs quantum wells resolved with in-plane and parallel magnetic fields Physica B-Condensed Matter. 256: 239-242. DOI: 10.1016/S0921-4526(98)00520-1 |
0.33 |
|
| 1998 |
Blank HR, Mathis S, Hall E, Bhargava S, Behres A, Heuken M, Kroemer H, Narayanamurti V. Al(As,Sb) heterobarriers on InAs: Growth, structural properties and electrical transport Journal of Crystal Growth. 187: 18-28. DOI: 10.1016/S0022-0248(97)00851-8 |
0.371 |
|
| 1997 |
Resch-Esser U, Esser N, Brar B, Kroemer H. Microscopic structure of GaSb(001) c(2{times}6) surfaces prepared by Sb decapping of MBE-grown samples Physical Review B. 55: 15401-15404. DOI: 10.1103/Physrevb.55.15401 |
0.314 |
|
| 1997 |
Blank H-, Kroemer H, Mathis S, Speck JS. Structural and electrical properties of low-temperature-grown Al(As,Sb) Applied Physics Letters. 71: 3534-3536. DOI: 10.1063/1.120382 |
0.313 |
|
| 1997 |
Rubin ME, Blank HR, Chin MA, Kroemer H, Narayanamurti V. Local conduction band offset of GaSb self-assembled quantum dots on GaAs Applied Physics Letters. 70: 1590-1592. DOI: 10.1063/1.118624 |
0.399 |
|
| 1997 |
Bhargava S, Blank HR, Narayanamurti V, Kroemer H. Fermi-level pinning position at the Au-InAs interface determined using ballistic electron emission microscopy Applied Physics Letters. 70: 759-761. DOI: 10.1063/1.118271 |
0.341 |
|
| 1997 |
Thomas M, Blank H-, Wong KC, Kroemer H. Buffer-dependent mobility and morphology of InAs(Al,Ga)Sb quantum wells Journal of Crystal Growth. 894-897. DOI: 10.1016/S0022-0248(96)00920-7 |
0.424 |
|
| 1997 |
Kroemer H, Thomas M. Induced superconductivity in InAs quantum wells with superconducting contacts Superlattices and Microstructures. 21: 61-67. DOI: 10.1006/Spmi.1996.0169 |
0.407 |
|
| 1996 |
Thomas M, Blank HR, Wong KC, Nguyen C, Kroemer H, Hu EL. Flux-periodic resistance oscillations in arrays of superconducting weak links based on InAs-AlSb quantum wells with Nb electrodes. Physical Review. B, Condensed Matter. 54: R2311-R2314. PMID 9986165 DOI: 10.1103/Physrevb.54.R2311 |
0.364 |
|
| 1996 |
Warburton R, Gauer C, Wixforth A, Kotthaus JP, Brar B, Kroemer H. Intersubband resonances in InAs/AlSb quantum wells: Selection rules, matrix elements, and the depolarization field Physical Review B. 53: 7903-7910. PMID 9982243 DOI: 10.1103/Physrevb.53.7903 |
0.353 |
|
| 1996 |
Jenichen B, Stepanov SA, Brar B, Kroemer H. Interface roughness of InAs/AlSb superlattices investigated by x-ray scattering Journal of Applied Physics. 79: 120-124. DOI: 10.1063/1.360918 |
0.334 |
|
| 1996 |
Blank H‐, Thomas M, Wong KC, Kroemer H. Influence of the buffer layers on the morphology and the transport properties in InAs/(Al,Ga)Sb quantum wells grown by molecular beam epitaxy Applied Physics Letters. 69: 2080-2082. DOI: 10.1063/1.116886 |
0.43 |
|
| 1996 |
Sun CK, Wang G, Bowers JE, Brar B, Blank HR, Kroemer H, Pilkuhn MH. Optical investigations of the dynamic behavior of GaSb/GaAs quantum dots Applied Physics Letters. 68: 1543-1545. DOI: 10.1063/1.115693 |
0.415 |
|
| 1996 |
Gauer C, Hartung M, Wixforth A, Kotthaus JP, Brar B, Kroemer H. Zero-field spin-splitting in InAs/AlSb quantum wells Surface Science. 361: 472-475. DOI: 10.1016/0039-6028(96)00448-7 |
0.359 |
|
| 1996 |
Yuh EL, Harris JGE, Eckhause T, Wong KC, Gwinn EG, Kroemer H, Allen SJ. Far-infrared studies of induced superconductivity in quantum wells Surface Science. 361: 315-319. DOI: 10.1016/0039-6028(96)00411-6 |
0.4 |
|
| 1996 |
Drexler H, Harris JGE, Yuh EL, Wong KC, Allen SJ, Gwinn EG, Kroemer H, Hu EL. Superconductivity and the Josephson effect in a periodic array of Nb-InAs-Nb junctions Surface Science. 361: 306-310. DOI: 10.1016/0039-6028(96)00409-8 |
0.315 |
|
| 1996 |
Goletti C, Resch-Esser U, Foeller J, Esser N, Richter W, Brar B, Kroemer H. A reflectance anisotropy spectroscopy study of GaSb(100)c(2 × 6) surfaces prepared by Sb decapping Surface Science. 771-775. DOI: 10.1016/0039-6028(95)01226-5 |
0.316 |
|
| 1996 |
Warburton R, Brar B, Gauer C, Wixforth A, Kotthaus JP, Kroemer H. Cyclotron resonance of electron-hole systems in InAs/GaSb/AlSb Solid-State Electronics. 40: 679-682. DOI: 10.1016/0038-1101(95)00385-1 |
0.329 |
|
| 1996 |
Warburton R, Gauer C, Wixforth A, Kotthaus JP, Brar B, Kroemer H. Collective effects in the intersubband resonance of InAs/AlSb quantum wells Superlattices and Microstructures. 19: 365-374. DOI: 10.1006/Spmi.1996.0040 |
0.367 |
|
| 1996 |
Gauer C, Wixforth A, Kotthaus JP, Brar B, Kroemer H. Spin phenomena in intersubband transitions Superlattices and Microstructures. 19: 241-249. DOI: 10.1006/Spmi.1996.0027 |
0.328 |
|
| 1995 |
Gauer C, Wixforth A, Kotthaus JP, Kubisa M, Zawadzki W, Brar B, Kroemer H. Magnetic-Field-Induced Spin-Conserving and Spin-Flip Intersubband Transitions in InAs Quantum Wells. Physical Review Letters. 74: 2772-2775. PMID 10058014 DOI: 10.1103/Physrevlett.74.2772 |
0.302 |
|
| 1995 |
Brar B, Kroemer H. Influence of impact ionization on the drain conductance in InAs-AlSb quantum well heterostructure field-effect transistors Ieee Electron Device Letters. 16: 548-550. DOI: 10.1109/55.475583 |
0.367 |
|
| 1995 |
Gauer C, Wixforth A, Kotthaus JP, Kubisa M, Zawadzki W, Brar B, Kroemer H. Magnetic-Field-Induced Spin-Conserving and Spin-Flip Intersubband Transitions in InAs Quantum Wells [Phys. Rev. Lett. 74, 2772 (1995)] Physical Review Letters. 75: 3374. DOI: 10.1103/Physrevlett.75.3374.2 |
0.311 |
|
| 1995 |
Spitzer J, Höpner A, Kuball M, Cardona M, Jenichen B, Neuroth H, Brar B, Kroemer H. Influence of the interface composition of InAs/AlSb superlattices on their optical and structural properties Journal of Applied Physics. 77: 811-820. DOI: 10.1063/1.359004 |
0.321 |
|
| 1995 |
Makimoto T, Brar B, Kroemer H. Hole accumulation in (In)GaSb/AlSb quantum wells induced by the Fermi-level pinning of an InAs surface Journal of Crystal Growth. 150: 883-886. DOI: 10.1016/0022-0248(95)80066-L |
0.437 |
|
| 1994 |
J Koester S, Bolognesi CR, Hu EL, Kroemer H, Rooks MJ. Quantized conductance in an InAs/AlSb split-gate ballistic constriction with 1.0 microm channel length. Physical Review. B, Condensed Matter. 49: 8514-8517. PMID 10009627 DOI: 10.1103/Physrevb.49.8514 |
0.553 |
|
| 1994 |
Koester SJ, Bolognesi CR, Thomas M, Hu EL, Kroemer H, Rooks MJ. Determination of one-dimensional subband spacings in InAs/AlSb ballistic constrictions using magnetic-field measurements. Physical Review. B, Condensed Matter. 50: 5710-5712. PMID 9976920 DOI: 10.1103/Physrevb.50.5710 |
0.553 |
|
| 1994 |
Abramovich Y, Poplawski J, Ehrenfreund E, Gershoni D, Brar B, Kroemer H. Intersubband L-valley and heavy-hole transitions in undoped GaSb/AlSb superlattices. Physical Review B. 50: 8922-8925. PMID 9974928 DOI: 10.1103/Physrevb.50.8922 |
0.301 |
|
| 1994 |
Brar B, Samoska L, Kroemer H, English JH. Electrical And Optical Properties Of Heavily N-Doped Gasb-Alsb Multiquantum Well Structures For Infrared Photodetector Applications Journal of Vacuum Science & Technology B. 12: 1242-1245. DOI: 10.1116/1.587055 |
0.382 |
|
| 1994 |
Bolognesi CR, Caine EJ, Kroemer H. Improved charge control and frequency performance in InAs/AlSb-based heterostructure field-effect transistors Ieee Electron Device Letters. 15: 16-18. DOI: 10.1109/55.289476 |
0.579 |
|
| 1994 |
Gauer C, Scriba J, Wixforth A, Kotthaus JP, Bolognesi CR, Nguyen C, Brar B, Kroemer H. Energy-dependant cyclotron mass in InAs/AlSb quantum wells Semiconductor Science and Technology. 9: 1580-1583. DOI: 10.1088/0268-1242/9/9/002 |
0.417 |
|
| 1994 |
Markelz AG, Asmar NG, Gwinn EG, Sherwin MS, Nguyen C, Kroemer H. Subcubic power dependence of third-harmonic generation for in-plane, far-infrared excitation of InAs quantum wells Semiconductor Science and Technology. 9: 634-637. DOI: 10.1088/0268-1242/9/5S/063 |
0.358 |
|
| 1994 |
Nguyen C, Kroemer H, Hu EL. Contact resistance of superconductor‐semiconductor interfaces: The case of Nb‐InAs/AlSb quantum‐well structures Applied Physics Letters. 65: 103-105. DOI: 10.1063/1.113047 |
0.343 |
|
| 1994 |
Brar B, Ibbetson J, Kroemer H, English JH. Effects of the interface bonding type on the optical and structural properties of InAs‐AlSb quantum wells Applied Physics Letters. 64: 3392-3394. DOI: 10.1063/1.111285 |
0.393 |
|
| 1994 |
Kroemer H, Nguyen C, Hu EL, Yuh EL, Thomas M, Wong KC. Quasiparticle transport and induced superconductivity in InAs-AlSb quantum wells with Nb electrodes Physica B: Condensed Matter. 203: 298-306. DOI: 10.1016/0921-4526(94)90073-6 |
0.403 |
|
| 1994 |
Sundaram M, Allen S, Nguyen C, Brar B, Jayaraman V, Kroemer H. Infrared spectroscopy of lateral-density-modulated 2DES in InAs/AlSb quantum wells Solid-State Electronics. 37: 1293-1295. DOI: 10.1016/0038-1101(94)90411-1 |
0.375 |
|
| 1994 |
Markelz AG, Gwinn EG, Sherwin MS, Nguyen C, Kroemer H. Giant third-order nonlinear susceptibilities for in-plane far-infrared excitation of single InAs quantum wells Solid State Electronics. 37: 1243-1245. DOI: 10.1016/0038-1101(94)90399-9 |
0.384 |
|
| 1994 |
Kroemer H, Nguyen C, Hu EL. Electronic interactions at superconductor-semiconductor interfaces Solid-State Electronics. 37: 1021-1025. DOI: 10.1016/0038-1101(94)90349-2 |
0.36 |
|
| 1994 |
Utzmeier T, Schlösser T, Ensslin K, Kotthaus JP, Bolognesi CR, Nguyen C, Kroemer H. Lateral potential modulation in InAs/AlSb quantum wells by wet etching Solid-State Electronics. 37: 575-578. DOI: 10.1016/0038-1101(94)90250-X |
0.63 |
|
| 1993 |
Markelz AG, Gwinn EG, Sherwin MS, Heyman JN, Nguyen C, Kroemer H, Hopkins PF, Gossard AC. Far-infrared harmonic generation from semiconductor heterostructures Proceedings of Spie. 1854: 48-55. DOI: 10.1117/12.148116 |
0.321 |
|
| 1993 |
Kroemer H. Semiconductor heterojunctions at the Conference on the Physics and Chemistry of Semiconductor Interfaces: A device physicist’s perspective Journal of Vacuum Science & Technology B. 11: 1354-1361. DOI: 10.1116/1.586940 |
0.336 |
|
| 1993 |
Bolognesi CR, Sela I, Ibbetson J, Brar B, Kroemer H, English JH. On the interface structure in InAs/AlSb quantum wells grown by molecular‐beam epitaxy Journal of Vacuum Science & Technology B. 11: 868-871. DOI: 10.1116/1.586768 |
0.366 |
|
| 1993 |
Nguyen C, Brar B, Kroemer H. Surface‐layer modulation of electron concentrations in InAs–AlSb quantum wells Journal of Vacuum Science & Technology B. 11: 1706-1709. DOI: 10.1116/1.586509 |
0.405 |
|
| 1993 |
Bolognesi CR, Werking JD, Caine EJ, Kroemer H, Hu EL. Microwave performance of a digital alloy barrier Al(Sb,As)/AlSb/InAs heterostructure field-effect transistor Ieee Electron Device Letters. 14: 13-15. DOI: 10.1109/55.215085 |
0.596 |
|
| 1993 |
Bolognesi CR, Caine EJ, Kroemer H. Improved charge control and the frequency performance in InAs/AlSb HFET's Ieee Transactions On Electron Devices. 40: 2114. DOI: 10.1109/16.239786 |
0.59 |
|
| 1993 |
Gauer C, Scriba J, Wixforth A, Kotthaus JP, Nguyen C, Tuttle G, English JH, Kroemer H. Photoconductivity in AlSb/InAs quantum wells Semiconductor Science and Technology. 8. DOI: 10.1088/0268-1242/8/1S/031 |
0.428 |
|
| 1993 |
Scriba J, Wixforth A, Kotthaus JP, Bolognesi CR, Nguyen C, Tuttle G, English JH, Kroemer H. The effect of Landau quantization on cyclotron resonance in a non-parabolic quantum wells Semiconductor Science and Technology. 8. DOI: 10.1088/0268-1242/8/1S/030 |
0.395 |
|
| 1993 |
Nguyen C, Brar B, Jayaraman V, Lorke A, Kroemer H. Magnetotransport in lateral periodic potentials formed by surface‐layer‐induced modulation in InAs‐AlSb quantum wells Applied Physics Letters. 63: 2251-2253. DOI: 10.1063/1.110543 |
0.403 |
|
| 1993 |
Wong KC, Krishnamurthy M, Brar B, Yi JC, Kroemer H, English JH. Growth and characterization of serpentine superlattices in the GaSb‐AlSb system Applied Physics Letters. 63: 1211-1213. DOI: 10.1063/1.109774 |
0.338 |
|
| 1993 |
Spitzer J, Fuchs HD, Etchegoin P, Ilg M, Cardona M, Brar B, Kroemer H. Quality of AlAs‐like and InSb‐like interfaces in InAs/AlSb superlattices: An optical study Applied Physics Letters. 62: 2274-2276. DOI: 10.1063/1.109393 |
0.314 |
|
| 1993 |
Samoska LA, Brar B, Kroemer H. Strong far-infrared intersubband absorption under normal incidence in heavily n-type doped nonalloy GaSb-AlSb superlattices Applied Physics Letters. 62: 2539-2541. DOI: 10.1063/1.109289 |
0.334 |
|
| 1993 |
Brar B, Kroemer H, Ibbetson J, English JH. Photoluminescence from narrow InAs-AlSb quantum wells Applied Physics Letters. 62: 3303-3305. DOI: 10.1063/1.109053 |
0.43 |
|
| 1993 |
Koester SJ, Bolognesi CR, Rooks MJ, Hu EL, Kroemer H. Quantized conductance of ballistic constrictions in InAs/AlSb quantum wells Applied Physics Letters. 62: 1373-1375. DOI: 10.1063/1.108683 |
0.632 |
|
| 1993 |
Simon A, Scriba J, Gauer C, Wixforth A, Kotthaus JP, Bolognesi CR, Nguyen C, Tuttle G, Kroemer H. Intersubband transitions in InAs/AlSb quantum wells Materials Science and Engineering B. 21: 201-204. DOI: 10.1016/0921-5107(93)90349-R |
0.405 |
|
| 1993 |
Scriba J, Wixforth A, Kotthaus JP, Bolognesi C, Nguyen C, Kroemer H. Spin-and Landau-splitting of the cyclotron resonance in a nonparabolic two-dimensional electron system Solid State Communications. 86: 633-636. DOI: 10.1016/0038-1098(93)90829-C |
0.596 |
|
| 1993 |
Nguyen C, Kroemer H, Hu EL, English JH. Low-temperature (4.2–9K) transport along InAs-AlSb quantum wells with δ-doped barriers and superconducting niobium electrodes Journal of Crystal Growth. 127: 845-848. DOI: 10.1016/0022-0248(93)90745-I |
0.432 |
|
| 1993 |
Brar B, Kroemer H, English J. “Quasi-direct” narrow GaSb-AlSb (100) quantum wells Journal of Crystal Growth. 127: 752-754. DOI: 10.1016/0022-0248(93)90725-C |
0.394 |
|
| 1993 |
Nguyen C, Brar B, Bolognesi CR, Pekarik JJ, Kroemer H, English JH. Growth of InAs-AlSb quantum wells having both high mobilities and high concentrations Journal of Electronic Materials. 22: 255-258. DOI: 10.1007/Bf02665035 |
0.648 |
|
| 1992 |
Nguyen C, Kroemer H, Hu EL. Anomalous Andreev conductance in InAs-AlSb quantum well structures with Nb electrodes. Physical Review Letters. 69: 2847-2850. PMID 10046604 DOI: 10.1103/Physrevlett.69.2847 |
0.381 |
|
| 1992 |
Sela I, Smith DL, Subbanna S, Kroemer H. Raman scattering near the (E0+Δ0)resonance from [211]-oriented Ga1-xInxAs/GaAs multiple quantum wells Physical Review B. 46: 1480-1488. PMID 10003790 DOI: 10.1103/Physrevb.46.1480 |
0.357 |
|
| 1992 |
Sela I, Bolognesi CR, Kroemer H. Single-mode behavior of AlSb1-xAsx alloys. Physical Review. B, Condensed Matter. 46: 16142-16143. PMID 10003753 DOI: 10.1103/Physrevb.46.16142 |
0.55 |
|
| 1992 |
Sela I, Samoska LA, Bolognesi CR, Gossard AC, Kroemer H. Raman scattering from interface modes in Ga1-xInxSb/InAs superlattices. Physical Review. B, Condensed Matter. 46: 7200-7203. PMID 10002432 DOI: 10.1103/Physrevb.46.7200 |
0.588 |
|
| 1992 |
Weman H, Miller ML, Pryor CE, Petroff PM, Kroemer H, Merz JL. Luminescence polarization anisotropy in (Al,Ga)As serpentine quantum wire arrays Semiconductors. 1675: 120-127. DOI: 10.1117/12.137586 |
0.403 |
|
| 1992 |
Pekarik JJ, Kroemer H, English JH. An AlSb–InAs–AlSb double‐heterojunction P‐n‐P bipolar transistor Journal of Vacuum Science & Technology B. 10: 1032-1034. DOI: 10.1116/1.586407 |
0.351 |
|
| 1992 |
Kroemer H, Nguyen C, Brar B. Are there Tamm-state donors at the InAs-AlSb quantum well interface? Journal of Vacuum Science & Technology B. 10: 1769-1772. DOI: 10.1116/1.586238 |
0.396 |
|
| 1992 |
Nguyen C, Brar B, Kroemer H, English J. Effects of barrier thicknesses on the electron concentration in not‐intentionally doped InAs–AlSb quantum wells Journal of Vacuum Science & Technology B. 10: 898-900. DOI: 10.1116/1.586147 |
0.386 |
|
| 1992 |
Bolognesi CR, Kroemer H, English JH. Well width dependence of electron transport in molecular‐beam epitaxially grown InAs/AlSb quantum wells Journal of Vacuum Science & Technology B. 10: 877-879. DOI: 10.1116/1.586141 |
0.448 |
|
| 1992 |
Werking JD, Bolognesi CR, Chang L-, Nguyen C, Hu EL, Kroemer H. High-transconductance InAs/AlSb heterojunction field-effect transistors with delta -doped AlSb upper barriers Ieee Electron Device Letters. 13: 164-166. DOI: 10.1109/55.144998 |
0.624 |
|
| 1992 |
Bolognesi CR, Kroemer H, English JH. Interface roughness scattering in InAs/AlSb quantum wells Applied Physics Letters. 61: 213-215. DOI: 10.1063/1.108221 |
0.646 |
|
| 1992 |
Chalmers SA, Weman H, Yi JC, Kroemer H, Merz JL, Dagli N. Photoluminescence study of lateral carrier confinement and compositional intermixing in (Al,Ga)Sb lateral superlattices Applied Physics Letters. 60: 1676-1678. DOI: 10.1063/1.107234 |
0.376 |
|
| 1992 |
Nguyen C, Brar B, Kroemer H, English JH. Surface donor contribution to electron sheet concentrations in not‐intentionally doped InAs‐AlSb quantum wells Applied Physics Letters. 60: 1854-1856. DOI: 10.1063/1.107189 |
0.403 |
|
| 1992 |
Sela I, Bolognesi CR, Samoska LA, Kroemer H. Study of interface composition and quality in AlSb/InAs/AlSb quantum wells by Raman scattering from interface modes Applied Physics Letters. 60: 3283-3285. DOI: 10.1063/1.106720 |
0.62 |
|
| 1992 |
Nguyen C, Ensslin K, Kroemer H. Magneto-transport in InAs/AlSb quantum wells with large electron concentration modulation Surface Science. 267: 549-552. DOI: 10.1016/0039-6028(92)91197-J |
0.422 |
|
| 1992 |
Scriba J, Seitz S, Wixforth A, Kotthaus JP, Tuttle G, English JH, Kroemer H. Electronic properties and far infrared spectroscopy of InAs/AlSb quantum wells Surface Science. 267: 483-487. DOI: 10.1016/0039-6028(92)91182-B |
0.401 |
|
| 1991 |
Petroff PM, Krishnamurthy M, Wassermeier M, Miller M, Weman H, Kroemer H, Merz J. Epitaxial Growth of GaAs-AIGaAs Quantum Wire Superlattices on Vicinal Surfaces. Mrs Proceedings. 237. DOI: 10.1557/Proc-237-467 |
0.384 |
|
| 1991 |
Sela I, Campbell IH, Laurich BK, Smith DL, Samoska LA, Bolognesi CR, Gossard AC, Kroemer H. Raman scattering study of InAs/GaInSb strained layer superlattices Journal of Applied Physics. 70: 5608-5614. DOI: 10.1063/1.350174 |
0.618 |
|
| 1991 |
Chang LD, Tseng MZ, Samoska LA, O’Shea JJ, Li YJ, Caine EJ, Hu EL, Petroff PM, Kroemer H. In situ YBa2Cu3O7−x superconductor films on GaAs/AlAs superlattices Journal of Applied Physics. 70: 5108-5110. DOI: 10.1063/1.349020 |
0.309 |
|
| 1991 |
Campbell IH, Watkins DE, Smith DL, Subbanna S, Kroemer H. Electrooptic modulation in polar growth axis InGaAs/GaAs multiple quantum wells Applied Physics Letters. 59: 1711-1713. DOI: 10.1063/1.106226 |
0.341 |
|
| 1991 |
Campbell IH, Sela I, Laurich BK, Smith DL, Bolognesi CR, Samoska LA, Gossard AC, Kroemer H. Far-infrared photoresponse of the InAs/GaInSb superlattice Applied Physics Letters. 59: 846-848. DOI: 10.1063/1.105255 |
0.59 |
|
| 1991 |
Hopkins PF, Rimberg AJ, Westervelt RM, Tuttle G, Kroemer H. Quantum Hall effect in InAs/AlSb quantum wells Applied Physics Letters. 58: 1428-1430. DOI: 10.1063/1.105188 |
0.448 |
|
| 1991 |
Fuchs G, Hauβer S, Hangleiter A, Griffiths G, Kroemer H, Subbanna S. Recombination in multiple QWS under high excitation conditions Superlattices and Microstructures. 10: 361-364. DOI: 10.1016/0749-6036(91)90342-O |
0.302 |
|
| 1991 |
Ensslin K, Chalmers SA, Petroff PM, Gossard AC, Kroemer H. Anisotropic magnetotransport in an antiwire array inserted in a GaAs heterostructure Superlattices and Microstructures. 9: 119-121. DOI: 10.1016/0749-6036(91)90106-2 |
0.38 |
|
| 1991 |
Chalmers SA, Kroemer H, Gossard AC. The growth of (Al,Ga)Sb tilted superlattices and their heteroepitaxy with InAs to form corrugated-barrier quantum wells Journal of Crystal Growth. 111: 647-650. DOI: 10.1016/0022-0248(91)91057-H |
0.355 |
|
| 1991 |
Petroff P, Miller M, Lu Y, Chalmers S, Metiu H, Kroemer H, Gossard A. MBE growth of tilted superlattices: advances and novel structures Journal of Crystal Growth. 111: 360-365. DOI: 10.1016/0022-0248(91)91001-Q |
0.322 |
|
| 1991 |
Miller M, Pryor C, Weman H, Samoska L, Kroemer H, Petroff P. Serpentine superlattice: concept and first results Journal of Crystal Growth. 111: 323-327. DOI: 10.1016/0022-0248(91)90994-G |
0.373 |
|
| 1990 |
Tuttle G, Kroemer H, English JH. Effects of interface layer sequencing on the transport properties of InAs/AlSb quantum wells: Evidence for antisite donors at the InAs/AlSb interface Journal of Applied Physics. 67: 3032-3037. DOI: 10.1063/1.345426 |
0.436 |
|
| 1990 |
Chalmers SA, Kroemer H, Gossard AC. Step‐flow growth on strained surfaces: (Al,Ga)Sb tilted superlattices Applied Physics Letters. 57: 1751-1753. DOI: 10.1063/1.104056 |
0.331 |
|
| 1990 |
Nguyen C, Werking J, Kroemer H, Hu EL. InAs‐AlSb quantum well as superconducting weak link with high critical current density Applied Physics Letters. 57: 87-89. DOI: 10.1063/1.103546 |
0.37 |
|
| 1990 |
Werking J, Tuttle G, Nguyen C, Hu EL, Kroemer H. InAs-AlSb heterostructure field-effect transistors fabricated using argon implantation for device isolation Applied Physics Letters. 57: 905-907. DOI: 10.1063/1.103400 |
0.323 |
|
| 1990 |
Nakagawa A, Pekarik JJ, Kroemer H, English JH. Deep levels in Te‐doped AlSb grown by molecular beam epitaxy Applied Physics Letters. 57: 1551-1553. DOI: 10.1063/1.103350 |
0.347 |
|
| 1990 |
Rao MR, Tarsa EJ, Samoska LA, English JH, Gossard AC, Kroemer H, Petroff PM, Hu EL. Superconducting YBaCuO thin films on GaAs/AlGaAs Applied Physics Letters. 56: 1905-1907. DOI: 10.1063/1.103041 |
0.328 |
|
| 1990 |
Petroff PM, Ensslin K, Miller M, Chalmers S, Weman H, Merz J, Kroemer H, Gossard AC. Novel approaches in 2 and 3 dimensional confinement structures : processing and properties Superlattices and Microstructures. 8: 35-39. DOI: 10.1016/0749-6036(90)90271-8 |
0.375 |
|
| 1989 |
Tuttle G, Kroemer H, English JH. Electron Transport in InAs/AlSb Quantum Wells: Interface Sequencing Effects Mrs Proceedings. 145: 415. DOI: 10.1557/Proc-145-415 |
0.425 |
|
| 1989 |
Liu TY, Petroff PM, Kroemer H, Gossard AC. Electronic Properties of Dislocations in Heavily Dislocated Quantum well Structures: Doping Effects Mrs Proceedings. 145. DOI: 10.1557/Proc-145-393 |
0.443 |
|
| 1989 |
Subbanna S, Gaines J, Tuttle G, Kroemer H, Chalmers S, English JH. Reflection high‐energy electron diffraction oscillations during molecular‐beam epitaxy growth of gallium antimonide, aluminum antimonide, and indium arsenide Journal of Vacuum Science & Technology B. 7: 289-295. DOI: 10.1116/1.584735 |
0.321 |
|
| 1989 |
Tuttle G, Kroemer H, English JH. Electron concentrations and mobilities in AlSb/InAs/AlSb quantum wells Journal of Applied Physics. 65: 5239-5242. DOI: 10.1063/1.343167 |
0.425 |
|
| 1989 |
Nakagawa A, Kroemer H, English JH. Electrical properties and band offsets of InAs/AlSb n‐N isotype heterojunctions grown on GaAs Applied Physics Letters. 54: 1893-1895. DOI: 10.1063/1.101233 |
0.372 |
|
| 1989 |
Petroff P, Gaines J, Tsuchiya M, Simes R, Coldren L, Kroemer H, English J, Gossard A. Band gap modulation in two dimensions by MBE growth of tilted superlattices and applications to quantum confinement structures Journal of Crystal Growth. 95: 260-265. DOI: 10.1016/0022-0248(89)90397-7 |
0.405 |
|
| 1989 |
Kroemer H, Liu T, Petroff PM. GaAs on Si and related systems: Problems and prospects Journal of Crystal Growth. 95: 96-102. DOI: 10.1016/0022-0248(89)90359-X |
0.386 |
|
| 1988 |
Zielinski E, Schweizer H, Griffiths G, Kroemer H, Subbanna S. Auger recombination in GaSbAlSb multi quantum well heterostructures Superlattices and Microstructures. 4: 473-478. DOI: 10.1016/0749-6036(88)90220-0 |
0.392 |
|
| 1988 |
Subbanna S, Gossard A, Kroemer H. Direct-to-indirect band gap conversion by application of electric field in the quantum well system Superlattices and Microstructures. 4: 693-696. DOI: 10.1016/0749-6036(88)90196-6 |
0.406 |
|
| 1988 |
Cebulla U, Zollner S, Forchel A, Subbanna S, Griffiths G, Kroemer H. Hot carrier relaxation and recombination in GaSb/AlSb quantum wells Solid-State Electronics. 31: 507-510. DOI: 10.1016/0038-1101(88)90329-2 |
0.372 |
|
| 1988 |
Subbanna S, Tuttle G, Kroemer H. N- type doping of gallium antimonide and aluminum antimonide grown by molecular beam epitaxy using lead telluride as a tellurium dopant source Journal of Electronic Materials. 17: 297-303. DOI: 10.1007/Bf02652109 |
0.351 |
|
| 1987 |
Liliental-Weber Z, Weber ER, Washburn J, Liu TY, Kroemer H. THE STRUCTURE OF GaAs/Si(211) HETEROEPITAXIAL LAYERS Mrs Proceedings. 91. DOI: 10.1557/Proc-91-91 |
0.354 |
|
| 1987 |
Cebulla U, Forchel A, Tränkle G, Subbanna S, Griffiths G, Kroemer H. Verification of Direct-Indirect Cross-Over in GaSb/AlSb MQW's by Time Resolved Spectroscopy Physica Scripta. 35: 517-519. DOI: 10.1088/0031-8949/35/4/019 |
0.391 |
|
| 1987 |
Forchel A, Cebulla U, Tränkle G, Ziem U, Kroemer H, Subbanna S, Griffiths G. E0+Δ0 transitions in GaSb/AlSb quantum wells Applied Physics Letters. 50: 182-184. DOI: 10.1063/1.97655 |
0.394 |
|
| 1987 |
Rao MA, Caine EJ, Kroemer H, Long SI, Babic DI. Determination of valence and conduction‐band discontinuities at the (Ga,In) P/GaAs heterojunction byC‐Vprofiling Journal of Applied Physics. 61: 643-649. DOI: 10.1063/1.338931 |
0.309 |
|
| 1987 |
Tränkle G, Lach E, Forchel A, Ell C, Haug H, Weimann G, Griffiths G, Kroemer H, Subbanna S. Universal Relation Between Band Renormalization And Carrier Density In Two-Dimensional Electron-Hole Plasmas Le Journal De Physique Colloques. 48. DOI: 10.1051/Jphyscol:1987582 |
0.318 |
|
| 1987 |
Forchel A, Cebulla U, Tränkle G, Ossau W, Griffiths G, Subbanna S, Kroemer H. TEMPERATURE AND MAGNETIC FIELD INDUCED BANDSTRUCTURE REVERSAL IN GaSb/AlSb QUANTUM WELLS Le Journal De Physique Colloques. 48. DOI: 10.1051/Jphyscol:1987531 |
0.358 |
|
| 1987 |
Cebulla U, Forchel A, Tränkle G, Griffiths G, Subbanna S, Kroemer H. Direct-indirect band gap crossover in two-dimensional GaSb/AlSb-quantum-well-structures Superlattices and Microstructures. 3: 429-434. DOI: 10.1016/0749-6036(87)90218-7 |
0.354 |
|
| 1987 |
Cebulla U, Ziem U, Tränkle G, Forchel A, Griffiths G, Subbanna S, Kroemer H. Optical spectroscopy on Eo+Δo transitions in GaSbAlSb quantum wells Superlattices and Microstructures. 3: 1-4. DOI: 10.1016/0749-6036(87)90166-2 |
0.357 |
|
| 1987 |
Kroemer H. Polar-on-nonpolar epitaxy Journal of Crystal Growth. 81: 193-204. DOI: 10.1016/0022-0248(87)90391-5 |
0.314 |
|
| 1986 |
Kroemer H. MBE Growth of GaAs on Si: Problems and Progress Mrs Proceedings. 67: 3. DOI: 10.1557/Proc-67-3 |
0.318 |
|
| 1986 |
Uppal PN, Kroemer H. Summary Abstract: Growth of device‐quality GaAs and (Al,Ga)As on (211)‐oriented silicon substrates, with thin (0.1 μm) superlattice buffer layers Journal of Vacuum Science & Technology B. 4: 641-641. DOI: 10.1116/1.583584 |
0.313 |
|
| 1986 |
Subbanna S, Kroemer H, Merz JL. Summary Abstract: Growth and selected properties of GaAs layers and GaAs/(Al,Ga)As superlattices with the (211) orientation Journal of Vacuum Science & Technology B. 4: 515-516. DOI: 10.1116/1.583412 |
0.325 |
|
| 1986 |
Subbanna S, Kroemer H, Merz JL. Molecular‐beam‐epitaxial growth and selected properties of GaAs layers and GaAs/(Al,Ga)As superlattices with the (211) orientation Journal of Applied Physics. 59: 488-494. DOI: 10.1063/1.336658 |
0.339 |
|
| 1986 |
Forchel A, Cebulla U, Tränkle G, Kroemer H, Subbanna S, Griffiths G. Size-induced direct-to-indirect gap transition in GaSb/AlSb multiple quantum well structures Surface Science. 174: 143-147. DOI: 10.1016/0039-6028(86)90399-7 |
0.375 |
|
| 1985 |
Kroemer H. Determination of heterojunction band offsets by capacitance‐voltage profiling through nonabrupt isotype heterojunctions Applied Physics Letters. 46: 504-505. DOI: 10.1063/1.95572 |
0.318 |
|
| 1985 |
Banerjee I, Chung DW, Kroemer H. Properties of (Ge2)x(GaAs)1-x alloys grown by molecular beam epitaxy Applied Physics Letters. 46: 494-496. DOI: 10.1063/1.95569 |
0.329 |
|
| 1985 |
Kroemer H. Heterostructure Device Physics: Band Discontinuities as Device Design Parameters Vlsi Electronics Microstructure Science. 10: 121-166. DOI: 10.1016/B978-0-12-234110-6.50009-0 |
0.33 |
|
| 1985 |
Babic DI, Kroemer H. The role of nonuniform dielectric permittivity in the determination of heterojunction band offsets by C-V profiling through isotype heterojunctions Solid State Electronics. 28: 1015-1017. DOI: 10.1016/0038-1101(85)90032-2 |
0.314 |
|
| 1984 |
Chang Y, Kroemer H. Protection of an interrupted molecular‐beam epitaxially grown surface by a thin epitaxial layer of InAs Applied Physics Letters. 45: 449-451. DOI: 10.1063/1.95211 |
0.327 |
|
| 1984 |
Caine EJ, Subbanna S, Kroemer H, Merz JL, Cho AY. Staggered‐lineup heterojunctions as sources of tunable below‐gap radiation: Experimental verification Applied Physics Letters. 45: 1123-1125. DOI: 10.1063/1.95040 |
0.366 |
|
| 1984 |
Banerjee I, Kroemer H, Chung DW. Observation of phase separation in (Ge2)x(GaAs)1-x alloys grown by molecular beam epitaxy Materials Letters. 2: 189-193. DOI: 10.1016/0167-577X(84)90021-1 |
0.317 |
|
| 1983 |
Kroemer H, Griffiths G. Staggered-lineup heterojunctions as sources of tunable below-gap radiation: Operating principle and semiconductor selection Ieee Electron Device Letters. 4: 20-22. DOI: 10.1109/Edl.1983.25631 |
0.412 |
|
| 1983 |
Griffiths G, Mohammed K, Subbana S, Kroemer H, Merz JL. GaSb/AlSb multiquantum well structures: molecular beam epitaxial growth and narrow-well photoluminescence Applied Physics Letters. 43: 1059-1061. DOI: 10.1063/1.94235 |
0.419 |
|
| 1983 |
Kroemer H. Heterostructure devices: A device physicist looks at interfaces Surface Science Letters. 132: 543-576. DOI: 10.1016/0039-6028(83)90561-7 |
0.326 |
|
| 1981 |
Kroemer H. Simple rate equation model for hypothetical doubly stimulated emission of both photons and phonons in quantum-well lasers Applied Physics Letters. 38: 959-961. DOI: 10.1063/1.92235 |
0.327 |
|
| 1980 |
Kroemer H, Polasko KJ, Wright SC. On the (110) orientation as the preferred orientation for the molecular beam epitaxial growth of GaAs on Ge, GaP on Si, and similar zincblende-on- diamond systems Applied Physics Letters. 36: 763-765. DOI: 10.1063/1.91643 |
0.322 |
|
| 1978 |
Kroemer H. Hot-electron relaxation effects in devices☆ Solid-State Electronics. 21: 61-67. DOI: 10.1016/0038-1101(78)90115-6 |
0.312 |
|
| 1977 |
Frensley WR, Kroemer H. Theory of the energy-band lineup at an abrupt semiconductor heterojunction Physical Review B. 16: 2642-2652. DOI: 10.1103/Physrevb.16.2642 |
0.302 |
|
| 1976 |
Frensley WR, Kroemer H. Prediction of semiconductor heterojunction discontinuities from bulk band structures Journal of Vacuum Science and Technology. 13: 810-815. DOI: 10.1116/1.568995 |
0.313 |
|
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