Sang W. Kang, Ph.D. - Publications
Affiliations: | University of Florida, Gainesville, Gainesville, FL, United States |
Area:
advanced electronic materialsYear | Citation | Score | |||
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2007 | Kang SW, Park HJ, Won YS, Kryliouk O, Anderson T, Khokhlov D, Burbaev T. Prevention of In droplets formation by HCl addition during metal organic vapor phase epitaxy of InN Applied Physics Letters. 90: 161126. DOI: 10.1063/1.2730582 | 0.594 | |||
2005 | Park HJ, Kang SW, Kryliouk O, Anderson T. Morphological study of InN films and nanorods grown by H-MOVPE Mrs Proceedings. 892. DOI: 10.1557/Proc-0892-Ff11-09 | 0.505 | |||
2005 | Kang SW, Park HJ, Kim T, Dann T, Kryliouk O, Anderson T. The influence of interdiffusion on strain energy in the GaN–sapphire system Physica Status Solidi (C). 2: 2420-2423. DOI: 10.1002/Pssc.200461562 | 0.589 | |||
2005 | Park HJ, Park C, Yeo S, Kang S, Mastro M, Kryliouk O, Anderson TJ. Epitaxial strain energy measurements of GaN on sapphire by Raman spectroscopy Physica Status Solidi (C). 2: 2446-2449. DOI: 10.1002/Pssc.200461513 | 0.6 | |||
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