Year |
Citation |
Score |
2020 |
Li N, Lim J, Azoulay JD, Ng TN. Tuning the charge blocking layer to enhance photomultiplication in organic shortwave infrared photodetectors Journal of Materials Chemistry C. DOI: 10.1039/D0Tc03013A |
0.4 |
|
2019 |
Kim H, Wu Z, Eedugurala N, Azoulay JD, Ng TN. Solution-Processed Phototransistors Combining Organic Absorber and Charge Transporting Oxide for Visible to Infrared Light Detection. Acs Applied Materials & Interfaces. PMID 31524369 DOI: 10.1021/Acsami.9B08622 |
0.385 |
|
2018 |
Wu Z, Zhai Y, Kim H, Azoulay JD, Ng TN. Emerging Design and Characterization Guidelines for Polymer-Based Infrared Photodetectors. Accounts of Chemical Research. PMID 30520307 DOI: 10.1021/Acs.Accounts.8B00446 |
0.376 |
|
2018 |
Sulas DB, London AE, Huang L, Xu L, Wu Z, Ng TN, Wong BM, Schlenker CW, Azoulay JD, Sfeir MY. Preferential Charge Generation at Aggregate Sites in Narrow Band Gap Infrared Photoresponsive Polymer Semiconductors Advanced Optical Materials. 6: 1701138. DOI: 10.1002/Adom.201701138 |
0.324 |
|
2018 |
Wu Z, Yao W, London AE, Azoulay JD, Ng TN. Elucidating the Detectivity Limits in Shortwave Infrared Organic Photodiodes Advanced Functional Materials. 28: 1800391. DOI: 10.1002/Adfm.201800391 |
0.398 |
|
2017 |
Guo X, Xu Y, Ogier S, Ng TN, Caironi M, Perinot A, Li L, Zhao J, Tang W, Sporea RA, Nejim A, Carrabina J, Cain P, Yan F. Current Status and Opportunities of Organic Thin-Film Transistor Technologies Ieee Transactions On Electron Devices. 64: 1906-1921. DOI: 10.1109/Ted.2017.2677086 |
0.338 |
|
2017 |
Mei P, Krusor B, Schwartz DE, Ng TN, Daniel G, Ready S, Whiting GL. Digital Fabrication and Integration of a Flexible Wireless Sensing Device Ieee Sensors Journal. 17: 7114-7122. DOI: 10.1109/Jsen.2017.2753740 |
0.334 |
|
2016 |
Wu Z, Yao W, London AE, Azoulay JD, Ng TN. Temperature-Dependent Detectivity of Near-Infrared Organic Bulk Heterojunction Photodiodes. Acs Applied Materials & Interfaces. PMID 27989105 DOI: 10.1021/Acsami.6B12162 |
0.38 |
|
2014 |
Hammock ML, Knopfmacher O, Ng TN, Tok JB, Bao Z. Electronic readout enzyme-linked immunosorbent assay with organic field-effect transistors as a preeclampsia prognostic. Advanced Materials (Deerfield Beach, Fla.). 26: 6138-44. PMID 25047764 DOI: 10.1002/Adma.201401829 |
0.363 |
|
2014 |
Street RA, Ng TN, Lujan RA, Son I, Smith M, Kim S, Lee T, Moon Y, Cho S. Sol-gel solution-deposited InGaZnO thin film transistors. Acs Applied Materials & Interfaces. 6: 4428-37. PMID 24593772 DOI: 10.1021/Am500126B |
0.337 |
|
2014 |
Mei P, Ng TN, Lujan RA, Schwartz DE, Kor S, Krusor BS, Veres J. Utilizing high resolution and reconfigurable patterns in combination with inkjet printing to produce high performance circuits Applied Physics Letters. 105. DOI: 10.1063/1.4896547 |
0.315 |
|
2013 |
Fujieda I, Ng T, Hoshino T, Hanasaki T. Photo-induced threshold and onset voltage shifts in organic thin-film transistors Ieice Transactions On Electronics. 1360-1366. DOI: 10.1587/Transele.E96.C.1360 |
0.315 |
|
2013 |
Ng TN, Fujieda I, Street RA, Veres J. Persistent photoconductivity effects in printed n-channel organic transistors Journal of Applied Physics. 113. DOI: 10.1063/1.4794097 |
0.377 |
|
2012 |
Ng TN, Schwartz DE, Lavery LL, Whiting GL, Russo B, Krusor B, Veres J, Bröms P, Herlogsson L, Alam N, Hagel O, Nilsson J, Karlsson C. Scalable printed electronics: an organic decoder addressing ferroelectric non-volatile memory. Scientific Reports. 2: 585. PMID 22900143 DOI: 10.1038/Srep00585 |
0.331 |
|
2011 |
Ng TN, Russo B, Arias AC. Solution-processed memristive junctions used in a threshold indicator Ieee Transactions On Electron Devices. 58: 3435-3443. DOI: 10.1109/Ted.2011.2162334 |
0.34 |
|
2010 |
Arias AC, Daniel J, Ng TN, Garner S, Whiting GL, Lavery L, Russo B, Krusor B. Flexible printed sensor tape based on solution processed materials 2010 23rd Annual Meeting of the Ieee Photonics Society, Photinics 2010. 18-19. DOI: 10.1109/Photonics.2010.5698733 |
0.652 |
|
2009 |
Ng TN, Russo B, Arias AC. Degradation mechanisms of organic ferroelectric field-effect transistors used as nonvolatile memory Journal of Applied Physics. 106. DOI: 10.1063/1.3253758 |
0.379 |
|
2009 |
Sambandan S, Kist RJP, Lujan R, Ng T, Arias AC, Street RA. Compact model for forward subthreshold characteristics in polymer semiconductor transistors Journal of Applied Physics. 106. DOI: 10.1063/1.3233927 |
0.343 |
|
2009 |
Ng TN, Wong WS, Lujan RA, Street RA. Characterization of charge collection in photodiodes under mechanical strain: Comparison between organic bulk heterojunction and amorphous silicon Advanced Materials. 21: 1855-1859. DOI: 10.1002/Adma.200803046 |
0.323 |
|
2008 |
Ng TN, Wong WS, Chabinyc ML, Sambandan S, Street RA. Flexible image sensor array with bulk heterojunction organic photodiode Applied Physics Letters. 92. DOI: 10.1063/1.2937018 |
0.361 |
|
2008 |
Ng TN, Daniel JH, Sambandan S, Arias AC, Chabinyc ML, Street RA. Gate bias stress effects due to polymer gate dielectrics in organic thin-film transistors Journal of Applied Physics. 103. DOI: 10.1063/1.2884535 |
0.361 |
|
2007 |
Ng TN, Silveira WR, Marohn JA. Dependence of charge injection on temperature, electric field, and energetic disorder in an organic semiconductor. Physical Review Letters. 98: 066101. PMID 17358957 DOI: 10.1103/Physrevlett.98.066101 |
0.724 |
|
2007 |
Wong WS, Ng T, Chabinyc ML, Lujan RA, Apte RB, Sambandan S, Limb S, Street RA. Flexible a-Si:H-based image sensors fabricated by digital lithography Materials Research Society Symposium Proceedings. 989: 197-203. DOI: 10.1557/Proc-0989-A09-03 |
0.337 |
|
2007 |
Ng TN, Lujan RA, Sambandan S, Street RA, Limb S, Wong WS. Low temperature a-Si:H photodiodes and flexible image sensor arrays patterned by digital lithography Applied Physics Letters. 91. DOI: 10.1063/1.2767981 |
0.325 |
|
2007 |
Silveira WR, Muller EM, Ng TN, Dunlap D, Marohn JA. High-sensitivity electric force microscopy of organic electronic materials and devices Scanning Probe Microscopy. 2: 788-830. DOI: 10.1007/978-0-387-28668-6_30 |
0.711 |
|
2006 |
Ng TN, Silveira WR, Marohn JA. Non-ideal behavior in a model system: Contact degradation in a molecularly doped polymer revealed by variable-temperature electric force microscopy Proceedings of Spie - the International Society For Optical Engineering. 6336. DOI: 10.1117/12.681010 |
0.738 |
|
2006 |
Ng TN, Jenkins NE, Marohn JA. Thermomagnetic fluctuations and hysteresis loops of magnetic cantilevers for magnetic resonance force microscopy Ieee Transactions On Magnetics. 42: 378-381. DOI: 10.1109/Tmag.2006.870259 |
0.723 |
|
2006 |
Ng TN, Marohn JA, Chabinyc ML. Comparing the kinetics of bias stress in organic field-effect transistors with different dielectric interfaces Journal of Applied Physics. 100. DOI: 10.1063/1.2358410 |
0.654 |
|
2004 |
Jenkins NE, DeFlores LP, Allen J, Ng TN, Garner SR, Kuehn S, Dawlaty JM, Marohn JA. Batch fabrication and characterization of ultrasensitive cantilevers with submicron magnetic tips Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 22: 909-915. DOI: 10.1116/1.1695336 |
0.649 |
|
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