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Hong Wu, Ph.D. - Publications

Affiliations: 
2003 Cornell University, Ithaca, NY, United States 
Area:
Compound semiconductor materials and high frequency high speed devices; molecular beam epitaxy; microwave and millimeter wave transistors and integrated circuits; semiconductor lasers and photodetectors and their integration with transistors
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18 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2009 Hofstetter D, Baumann E, Giorgetta FR, Théron R, Wu H, Schaff WJ, Dawlaty J, George PA, Eastman LF, Rana F, Kandaswamy PK, Leconte S, Monroy E. Photodetectors based on intersubband transitions using III-nitride superlattice structures. Journal of Physics. Condensed Matter : An Institute of Physics Journal. 21: 174208. PMID 21825412 DOI: 10.1088/0953-8984/21/17/174208  0.555
2006 Wang Z, Reimann K, Woerner M, Elsaesser T, Hofstetter D, Baumann E, Giorgetta FR, Wu H, Schaff WJ, Eastman LF. Ultrafast hole burning in intersubband absorption lines of GaN/AlN superlattices Applied Physics Letters. 89. DOI: 10.1063/1.2360218  0.442
2006 Cha HOY, Chen X, Wu H, Schaff WJ, Spencer MG, Eastman LF. Ohmic contact using the Si nano-interiayer for undoped-AIGaN/GaN heterostructures Journal of Electronic Materials. 35: 406-410. DOI: 10.1007/Bf02690526  0.637
2005 Baumann E, Giorgetta FR, Hofstetter D, Wu H, Schaff WJ, Eastman LF, Kirste L. Tunneling effects and intersubband absorption in AlN/GaN superlattices Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1849418  0.513
2005 Baumann E, Giorgetta FR, Hofstetter D, Wu H, Schaff WJ, Eastman LF, Kirste L. Resonant tunnelling and intersubband absorption in AlN - GaN superlattices Physica Status Solidi C: Conferences. 2: 1014-1018. DOI: 10.1002/Pssc.200460611  0.519
2003 Furis M, Cartwright AN, Wu H, Schaff WJ. Emission Mechanisms in UV Emitting GaN/AlN Multiple Quantum Well Structures Mrs Proceedings. 798. DOI: 10.1557/Proc-798-Y10.5  0.395
2003 Furis M, Cartwright AN, Wu H, Schaff WJ. Room-temperature ultraviolet emission from GaN/AlN multiple-quantum-well heterostructures Applied Physics Letters. 83: 3486-3488. DOI: 10.1063/1.1623335  0.365
2003 Mkhoyan KA, Silcox J, Wu H, Schaff WJ, Eastman LF. Nonuniformities in GaN/AlN quantum wells Applied Physics Letters. 83: 2668-2670. DOI: 10.1063/1.1614439  0.51
2003 Hofstetter D, Schad SS, Wu H, Schaff WJ, Eastman LF. GaN/AlN-based quantum-well infrared photodetector for 1.55 μm Applied Physics Letters. 83: 572-574. DOI: 10.1063/1.1594265  0.453
2002 Wu H, Schaff WJ, Koley G, Furis M, Cartwright AN, Mkhoyan KA, Silcox J, Henderson W, Doolittle WA, Osinsky AV. Molecular Beam Epitaxial Growth of AlN/GaN Multiple Quantum Wells Mrs Proceedings. 743: 375-380. DOI: 10.1557/Proc-743-L6.2  0.45
2002 Furis M, Chen F, Cartwright AN, Wu H, Schaff WJ. Room-Temperature Time–Resolved Photoluminescence Studies of UV Emission from GaN/AlN Quantum Wells Mrs Proceedings. 743. DOI: 10.1557/Proc-743-L11.14  0.361
2001 Lu H, Schaff WJ, Hwang J, Wu H, Koley G, Eastman LF. Effect of an AlN buffer layer on the epitaxial growth of InN by molecular-beam epitaxy Applied Physics Letters. 79: 1489-1491. DOI: 10.1063/1.1402649  0.709
2000 Lu H, Schaff WJ, Hwang J, Wu H, Yeo W, Pharkya A, Eastman LF. Improvement on epitaxial grown of InN by migration enhanced epitaxy Applied Physics Letters. 77: 2548-2550. DOI: 10.1063/1.1318235  0.645
2000 Schaff WJ, Wu H, Praharaj CJ, Murphy M, Eustis T, Foutz B, Ambacher O, Eastman LF. GaN/SiC heterojunction bipolar transistors Solid-State Electronics. 44: 259-264. DOI: 10.1016/S0038-1101(99)00232-4  0.72
1999 Murphy MJ, Foutz BE, Chu K, Wu H, Yeo W, Schaff WJ, Ambacher O, Eastman LF, Eustis TJ, Dimitrov R, Stutzmann M, Rieger W. Normal and Inverted Algan/Gan Based Piezoelectric Field Effect Transistors Grown by Plasma Induced Molecular Beam Epitaxy Mrs Internet Journal of Nitride Semiconductor Research. 4: 840-845. DOI: 10.1557/S1092578300003501  0.698
1999 Murphy MJ, Chu K, Wu H, Yeo W, Schaff WJ, Ambacher O, Smart J, Shealy JR, Eastman LF, Eustis TJ. Molecular beam epitaxial growth of normal and inverted two-dimensional electron gases in AlGaN/GaN based heterostructures Journal of Vacuum Science & Technology B. 17: 1252-1254. DOI: 10.1116/1.590733  0.764
1999 Murphy MJ, Chu K, Wu H, Yeo W, Schaff WJ, Ambacher O, Eastman LF, Eustis TJ, Silcox J, Dimitrov R, Stutzmann M. High-frequency AlGaN/GaN polarization-induced high electron mobility transistors grown by plasma-assisted molecular-beam epitaxy Applied Physics Letters. 75: 3653-3655. DOI: 10.1063/1.125418  0.729
1998 Murphy MJ, Foutz BE, Chu K, Wu H, Yeo W, Schaff WJ, Ambacher O, Eastman LF, Eustis TJ, Dimitrov R, Stutzmann M, Rieger W. Normal and Inverted Algan/Gan Based Piezoelectric Field effect Transistors Grown by Plasma Induced Molecular Beam Epitaxy Mrs Proceedings. 537. DOI: 10.1557/Proc-537-G8.4  0.698
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