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Malcolm S. Carroll, Ph.D. - Publications

Affiliations: 
2001 Princeton University, Princeton, NJ 
Area:
Biological & Biomedical,Energy & Environment,Materials & Devices,Nanotechnologies
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92 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2019 Curry MJ, Rudolph M, England TD, Mounce AM, Jock RM, Bureau-Oxton C, Harvey-Collard P, Sharma PA, Anderson JM, Campbell DM, Wendt JR, Ward DR, Carr SM, Lilly MP, Carroll MS. Single-Shot Readout Performance of Two Heterojunction-Bipolar-Transistor Amplification Circuits at Millikelvin Temperatures. Scientific Reports. 9: 16976. PMID 31740683 DOI: 10.1038/S41598-019-52868-1  0.356
2019 Harvey-Collard P, Jacobson NT, Bureau-Oxton C, Jock RM, Srinivasa V, Mounce AM, Ward DR, Anderson JM, Manginell RP, Wendt JR, Pluym T, Lilly MP, Luhman DR, Pioro-Ladrière M, Carroll MS. Spin-orbit Interactions for Singlet-Triplet Qubits in Silicon. Physical Review Letters. 122: 217702. PMID 31283344 DOI: 10.1103/Physrevlett.122.217702  0.324
2019 Rochette S, Rudolph M, Roy A, Curry MJ, Eyck GAT, Manginell RP, Wendt JR, Pluym T, Carr SM, Ward DR, Lilly MP, Carroll MS, Pioro-Ladrière M. Quantum dots with split enhancement gate tunnel barrier control Applied Physics Letters. 114: 083101. DOI: 10.1063/1.5091111  0.418
2018 Jock RM, Jacobson NT, Harvey-Collard P, Mounce AM, Srinivasa V, Ward DR, Anderson J, Manginell R, Wendt JR, Rudolph M, Pluym T, Gamble JK, Baczewski AD, Witzel WM, Carroll MS. A silicon metal-oxide-semiconductor electron spin-orbit qubit. Nature Communications. 9: 1768. PMID 29720586 DOI: 10.1038/S41467-018-04200-0  0.382
2018 Harvey-Collard P, D’Anjou B, Rudolph M, Jacobson NT, Dominguez J, Ten Eyck GA, Wendt JR, Pluym T, Lilly MP, Coish WA, Pioro-Ladrière M, Carroll MS. High-Fidelity Single-Shot Readout for a Spin Qubit via an Enhanced Latching Mechanism Physical Review X. 8. DOI: 10.1103/Physrevx.8.021046  0.309
2018 Bussmann E, Gamble JK, Koepke JC, Laroche D, Huang SH, Chuang Y, Li J, Liu CW, Swartzentruber BS, Lilly MP, Carroll MS, Lu T. Atomic-layer doping of SiGe heterostructures for atomic-precision donor devices Physical Review Materials. 2. DOI: 10.1103/Physrevmaterials.2.066004  0.452
2018 Shirkhorshidian A, Gamble JK, Maurer L, Carr SM, Dominguez J, Ten Eyck GA, Wendt JR, Nielsen E, Jacobson NT, Lilly MP, Carroll MS. Spectroscopy of Multielectrode Tunnel Barriers Physical Review Applied. 10. DOI: 10.1103/Physrevapplied.10.044003  0.332
2017 Pacheco JL, Singh M, Perry DL, Wendt JR, Ten Eyck G, Manginell RP, Pluym T, Luhman DR, Lilly MP, Carroll MS, Bielejec E. Ion implantation for deterministic single atom devices. The Review of Scientific Instruments. 88: 123301. PMID 29289172 DOI: 10.1063/1.5001520  0.324
2017 Harvey-Collard P, Jacobson NT, Rudolph M, Dominguez J, Ten Eyck GA, Wendt JR, Pluym T, Gamble JK, Lilly MP, Pioro-Ladrière M, Carroll MS. Coherent coupling between a quantum dot and a donor in silicon. Nature Communications. 8: 1029. PMID 29044099 DOI: 10.1038/S41467-017-01113-2  0.358
2017 Yitamben EN, Butera RE, Swartzentruber BS, Simonson RJ, Misra S, Carroll MS, Bussmann E. Heterogeneous nucleation of pits via step pinning during Si(100) homoepitaxy New Journal of Physics. 19: 113023. DOI: 10.1088/1367-2630/Aa9397  0.377
2016 Gamble JK, Harvey-Collard P, Jacobson NT, Baczewski AD, Nielsen E, Maurer L, Montaño I, Rudolph M, Carroll MS, Yang CH, Rossi A, Dzurak AS, Muller RP. Valley splitting of single-electron Si MOS quantum dots Applied Physics Letters. 109: 253101. DOI: 10.1063/1.4972514  0.398
2016 Lu TM, Gamble JK, Muller RP, Nielsen E, Bethke D, Ten Eyck GA, Pluym T, Wendt JR, Dominguez J, Lilly MP, Carroll MS, Wanke MC. Fabrication of quantum dots in undoped Si/Si0.8Ge0.2 heterostructures using a single metal-gate layer Applied Physics Letters. 109. DOI: 10.1063/1.4961889  0.457
2016 Tracy LA, Luhman DR, Carr SM, Bishop NC, Ten Eyck GA, Pluym T, Wendt JR, Lilly MP, Carroll MS. Single shot spin readout using a cryogenic high-electron-mobility transistor amplifier at sub-Kelvin temperatures Applied Physics Letters. 108. DOI: 10.1063/1.4941421  0.381
2016 Singh M, Pacheco JL, Perry D, Garratt E, Ten Eyck G, Bishop NC, Wendt JR, Manginell RP, Dominguez J, Pluym T, Luhman DR, Bielejec E, Lilly MP, Carroll MS. Electrostatically defined silicon quantum dots with counted antimony donor implants Applied Physics Letters. 108. DOI: 10.1063/1.4940421  0.35
2015 Shirkhorshidian A, Bishop NC, Dominguez J, Grubbs RK, Wendt JR, Lilly MP, Carroll MS. Transport spectroscopy of low disorder silicon tunnel barriers with and without Sb implants. Nanotechnology. 26: 205703. PMID 25927489 DOI: 10.1088/0957-4484/26/20/205703  0.363
2015 Bussmann E, Rudolph M, Subramania GS, Misra S, Carr SM, Langlois E, Dominguez J, Pluym T, Lilly MP, Carroll MS. Scanning capacitance microscopy registration of buried atomic-precision donor devices. Nanotechnology. 26: 085701. PMID 25649193 DOI: 10.1088/0957-4484/26/8/085701  0.37
2015 Douglas EA, Sheng JJ, Verley JC, Carroll MS. Argon-germane in situ plasma clean for reduced temperature Ge on Si epitaxy by high density plasma chemical vapor deposition Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 33. DOI: 10.1116/1.4921590  0.417
2015 Witzel WM, Montaño I, Muller RP, Carroll MS. Multiqubit gates protected by adiabaticity and dynamical decoupling applicable to donor qubits in silicon Physical Review B - Condensed Matter and Materials Physics. 92. DOI: 10.1103/Physrevb.92.081407  0.355
2015 Curry MJ, England TD, Bishop NC, Ten-Eyck G, Wendt JR, Pluym T, Lilly MP, Carr SM, Carroll MS. Cryogenic preamplification of a single-electron-transistor using a silicon-germanium heterojunction-bipolar-transistor Applied Physics Letters. 106. DOI: 10.1063/1.4921308  0.31
2014 Lee WC, McKibbin SR, Thompson DL, Xue K, Scappucci G, Bishop N, Celler GK, Carroll MS, Simmons MY. Lithography and doping in strained Si towards atomically precise device fabrication. Nanotechnology. 25: 145302. PMID 24633016 DOI: 10.1088/0957-4484/25/14/145302  0.436
2014 Rudolph M, Carr SM, Subramania G, Ten Eyck G, Dominguez J, Pluym T, Lilly MP, Carroll MS, Bussmann E. Probing the limits of Si:P δ-doped devices patterned by a scanning tunneling microscope in a field-emission mode Applied Physics Letters. 105. DOI: 10.1063/1.4899255  0.381
2013 Nguyen KT, Lilly MP, Nielsen E, Bishop N, Rahman R, Young R, Wendt J, Dominguez J, Pluym T, Stevens J, Lu TM, Muller R, Carroll MS. Charge sensed Pauli blockade in a metal-oxide-semiconductor lateral double quantum dot. Nano Letters. 13: 5785-90. PMID 24199677 DOI: 10.1021/Nl4020759  0.365
2013 Sheng JJ, Leonhardt D, Han SM, Johnston SW, Cederberg JG, Carroll MS. Empirical correlation for minority carrier lifetime to defect density profile in germanium on silicon grown by nanoscale interfacial engineering Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 31. DOI: 10.1116/1.4816488  0.456
2013 Gao X, Nielsen E, Muller RP, Young RW, Salinger AG, Bishop NC, Lilly MP, Carroll MS. Quantum computer aided design simulation and optimization of semiconductor quantum dots Journal of Applied Physics. 114. DOI: 10.1063/1.4825209  0.315
2013 Tracy LA, Lu TM, Bishop NC, Ten Eyck GA, Pluym T, Wendt JR, Lilly MP, Carroll MS. Electron spin lifetime of a single antimony donor in silicon Applied Physics Letters. 103. DOI: 10.1063/1.4824128  0.355
2013 Lee WCT, Bishop N, Thompson DL, Xue K, Scappucci G, Cederberg JG, Gray JK, Han SM, Celler GK, Carroll MS, Simmons MY. Thermal processing of strained silicon-on-insulator for atomically precise silicon device fabrication Applied Surface Science. 265: 833-838. DOI: 10.1016/J.Apsusc.2012.11.129  0.357
2012 Witzel WM, Rahman R, Carroll MS. Nuclear spin induced decoherence of a quantum dot in Si confined at a SiGe interface: Decoherence dependence on 73Ge Physical Review B - Condensed Matter and Materials Physics. 85. DOI: 10.1103/Physrevb.85.205312  0.448
2012 Rahman R, Nielsen E, Muller RP, Carroll MS. Voltage controlled exchange energies of a two-electron silicon double quantum dot with and without charge defects in the dielectric Physical Review B - Condensed Matter and Materials Physics. 85. DOI: 10.1103/Physrevb.85.125423  0.375
2012 Nielsen E, Muller RP, Carroll MS. Configuration interaction calculations of the controlled phase gate in double quantum dot qubits Physical Review B - Condensed Matter and Materials Physics. 85. DOI: 10.1103/Physrevb.85.035319  0.3
2012 Takita M, Bradbury FR, Gurrieri TM, Wilkel KJ, Eng K, Carroll MS, Lyon SA. Spatial distribution of electrons on a superfluid helium charge-coupled device Journal of Physics: Conference Series. 400. DOI: 10.1088/1742-6596/400/4/042059  0.313
2012 Jock RM, Shankar S, Tyryshkin AM, He J, Eng K, Childs KD, Tracy LA, Lilly MP, Carroll MS, Lyon SA. Probing band-tail states in silicon metal-oxide-semiconductor heterostructures with electron spin resonance Applied Physics Letters. 100. DOI: 10.1063/1.3675862  0.459
2011 Bradbury FR, Takita M, Gurrieri TM, Wilkel KJ, Eng K, Carroll MS, Lyon SA. Efficient clocked electron transfer on superfluid helium. Physical Review Letters. 107: 266803. PMID 22243176 DOI: 10.1103/Physrevlett.107.266803  0.304
2011 Stalford H, Young RW, Nordberg EP, Pinilla CB, Levy JE, Carroll MS. Capacitance modeling of complex topographical silicon quantum dot structures Ieee Transactions On Nanotechnology. 10: 855-864. DOI: 10.1109/Tnano.2010.2087035  0.337
2011 Levy JE, Carroll MS, Ganti A, Phillips CA, Landahl AJ, Gurrieri TM, Carr RD, Stalford HL, Nielsen E. Implications of electronics constraints for solid-state quantum error correction and quantum circuit failure probability New Journal of Physics. 13. DOI: 10.1088/1367-2630/13/8/083021  0.302
2011 Lu TM, Bishop NC, Pluym T, Means J, Kotula PG, Cederberg J, Tracy LA, Dominguez J, Lilly MP, Carroll MS. Enhancement-mode buried strained silicon channel quantum dot with tunable lateral geometry Applied Physics Letters. 99. DOI: 10.1063/1.3615288  0.465
2011 Leonhardt D, Sheng J, Cederberg JG, Carroll MS, Li Q, Romero MJ, Kuciauskas D, Friedman DJ, Han SM. Removal of stacking faults in Ge grown on Si through nanoscale openings in chemical SiO2 Thin Solid Films. 519: 7664-7671. DOI: 10.1016/J.Tsf.2011.05.044  0.436
2010 Witzel WM, Carroll MS, Morello A, Cywiński L, Das Sarma S. Electron spin decoherence in isotope-enriched silicon. Physical Review Letters. 105: 187602. PMID 21231138 DOI: 10.1103/Physrevlett.105.187602  0.349
2010 Bielejec E, Seamons JA, Carroll MS. Single ion implantation for single donor devices using Geiger mode detectors. Nanotechnology. 21: 85201. PMID 20101077 DOI: 10.1088/0957-4484/21/8/085201  0.315
2010 Rahman R, Muller RP, Levy JE, Carroll MS, Klimeck G, Greentree AD, Hollenberg LCL. Coherent electron transport by adiabatic passage in an imperfect donor chain Physical Review B - Condensed Matter and Materials Physics. 82. DOI: 10.1103/Physrevb.82.155315  0.353
2010 Nielsen E, Young RW, Muller RP, Carroll MS. Implications of simultaneous requirements for low-noise exchange gates in double quantum dots Physical Review B - Condensed Matter and Materials Physics. 82. DOI: 10.1103/Physrevb.82.075319  0.313
2010 Tracy LA, Nordberg EP, Young RW, Borrás Pinilla C, Stalford HL, Ten Eyck GA, Eng K, Childs KD, Wendt JR, Grubbs RK, Stevens J, Lilly MP, Eriksson MA, Carroll MS. Double quantum dot with tunable coupling in an enhancement-mode silicon metal-oxide semiconductor device with lateral geometry Applied Physics Letters. 97. DOI: 10.1063/1.3518058  0.391
2010 Leonhardt D, Sheng J, Cederberg JG, Li Q, Carroll MS, Han SM. Nanoscale interfacial engineering to grow Ge on Si as virtual substrates and subsequent integration of GaAs Thin Solid Films. 518: 5920-5927. DOI: 10.1016/J.Tsf.2010.05.085  0.472
2010 Tracy LA, Eng K, Childs K, Carroll MS, Lilly MP. Enhancement of valley splitting in (100) Si MOSFETs at high magnetic fields Solid State Communications. 150: 231-234. DOI: 10.1016/J.Ssc.2009.11.015  0.349
2010 Cederberg JG, Leonhardt D, Sheng JJ, Li Q, Carroll MS, Han SM. GaAs/Si epitaxial integration utilizing a two-step, selectively grown Ge intermediate layer Journal of Crystal Growth. 312: 1291-1296. DOI: 10.1016/J.Jcrysgro.2009.10.061  0.459
2009 Nordberg EP, Ten Eyck GA, Stalford HL, Muller RP, Young RW, Eng K, Tracy LA, Childs KD, Wendt JR, Grubbs RK, Stevens J, Lilly MP, Eriksson MA, Carroll MS. Enhancement-mode double-top-gated metal-oxide-semiconductor nanostructures with tunable lateral geometry Physical Review B - Condensed Matter and Materials Physics. 80. DOI: 10.1103/Physrevb.80.115331  0.451
2009 Tracy LA, Hwang EH, Eng K, Ten Eyck GA, Nordberg EP, Childs K, Carroll MS, Lilly MP, Das Sarma S. Observation of percolation-induced two-dimensional metal-insulator transition in a Si MOSFET Physical Review B - Condensed Matter and Materials Physics. 79. DOI: 10.1103/Physrevb.79.235307  0.307
2009 Nordberg EP, Stalford HL, Young R, Ten Eyck GA, Eng K, Tracy LA, Childs KD, Wendt JR, Grubbs RK, Stevens J, Lilly MP, Eriksson MA, Carroll MS. Charge sensing in enhancement mode double-top-gated metal-oxide- semiconductor quantum dots Applied Physics Letters. 95. DOI: 10.1063/1.3259416  0.323
2008 Carroll MS, Suh YS, Levy R. Nonlocal reduced boron diffusivity in silicon below strained Si 1-xGex surfaces Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 26: 72-75. DOI: 10.1116/1.2817631  0.398
2008 Kerr DC, Gering JM, McKay TG, Carroll MS, Neve CR, Raskin JP. Identification of RF harmonic distortion on Si substrates and its reduction using a trap-rich layer 2008 Ieee Topical Meeting On Silicon Monolithic Integrated Circuits in Rf Systms - Digest of Papers, Sirf. 151-154. DOI: 10.1109/SMIC.2008.44  0.316
2008 Carroll MS, Childs K, Jarecki R, Bauer T, Saiz K. Ge-Si separate absorption and multiplication avalanche photodiode for Geiger mode single photon detection Applied Physics Letters. 93. DOI: 10.1063/1.3020297  0.419
2008 Seamons JA, Bielejec E, Carroll MS, Childs KD. Room temperature single ion detection with Geiger mode avalanche diode detectors Applied Physics Letters. 93. DOI: 10.1063/1.2967211  0.341
2008 Pan W, Kotula PG, Carroll MS, Monson T, Wang YQ. Hysteretic magnetophotoluminescence in Mn ion implanted silicon rich oxide thin films Applied Physics Letters. 92. DOI: 10.1063/1.2952277  0.327
2008 Pan W, Dunn RG, Carroll MS, Banks JC, Brewer LN. Photoluminescence in silicon rich oxide thin films under different thermal treatments Journal of Non-Crystalline Solids. 354: 975-977. DOI: 10.1016/J.Jnoncrysol.2007.08.008  0.448
2007 Carroll M, Childs K, Serkland D, Jarecki R, Bauer T, Saiz K. Germanium-silicon separate absorption and multiplication avalanche photodetectors fabricated with low temperature high density plasma chemical vapor deposited germanium Materials Research Society Symposium Proceedings. 989: 293-298. DOI: 10.1557/Proc-0989-A12-05  0.474
2007 Pan W, Dunn RG, Carroll MS, Wang YQ. Experimental studies of photoluminescence in Mn-ion implanted silicon rich oxide thin film Materials Research Society Symposium Proceedings. 910: 225-229. DOI: 10.1557/Proc-0910-A08-08  0.384
2007 Carroll MS, Brewer L, Verley JC, Banks J, Sheng JJ, Pan W, Dunn R. Silicon nanocrystal growth in the long diffusion length regime using high density plasma chemical vapour deposited silicon rich oxides Nanotechnology. 18. DOI: 10.1088/0957-4484/18/31/315707  0.479
2007 Carroll MS, Verley JC, Sheng JJ, Banks J. Roughening transition in nanoporous hydrogenated amorphous germanium: Roughness correlation to film stress Journal of Applied Physics. 101. DOI: 10.1063/1.2433699  0.344
2006 Carroll M, Sheng J, Verley JC. Low-temperature hetero-epitaxial growth of Ge on Si by high density plasma chemical vapor deposition Materials Research Society Symposium Proceedings. 934: 13-19. DOI: 10.1557/Proc-0934-I09-02  0.429
2006 Sheng JJ, Carroll MS. Minority carrier lifetime measurement in germanium on silicon heterostructures for optoelectronic applications Materials Research Society Symposium Proceedings. 891: 585-590. DOI: 10.1557/Proc-0891-Ee12-09  0.503
2006 Suh YS, Carroll MS, Levy RA, Bisognin G, De Salvador D, Sahiner MA. Implantation and activation of high concentrations of boron and phosphorus in Germanium Materials Research Society Symposium Proceedings. 891: 303-308. DOI: 10.1557/Proc-0891-Ee07-20  0.323
2005 Stewart EJ, Carroll MS, Sturm JC. Boron segregation in single-crystal Si1-x-yGexC y and Si1-yCy alloys Journal of the Electrochemical Society. 152: G500-G505. DOI: 10.1149/1.1915209  0.668
2005 Suh YS, Carroll MS, Levy RA, Bisognin G, De Salvador D, Sahiner MA, King CA. Implantation and activation of high concentrations of boron in germanium Ieee Transactions On Electron Devices. 52: 2416-2421. DOI: 10.1109/Ted.2005.857183  0.375
2005 Suh YS, Carroll MS, Levy RA, Sahiner MA, Bisognin G, King CA. Modeling of boron and phosphorus implantation into (100) germanium Ieee Transactions On Electron Devices. 52: 91-98. DOI: 10.1109/Ted.2004.841340  0.307
2005 Carroll MS, King CA. Shortened photoconductance lifetime of Si/SiGe heterostructures due to interfacial oxygen or carbon from incomplete in-situ hydrogen cleans Thin Solid Films. 473: 137-144. DOI: 10.1016/J.Tsf.2004.07.082  0.499
2005 Carroll MS, Suh YS, Levy R. Suppressed boron diffusion in bulk silicon below strained (100) Si 1-xGe x surfaces during nitrogen annealing Proceedings - Electrochemical Society. 446-454.  0.409
2004 Carroll MS, Sturm JC. Boron diffusion and silicon self-interstitial recycling between SiGeC layers Materials Research Society Symposium - Proceedings. 810: 85-90. DOI: 10.1557/Proc-810-C3.5  0.378
2004 Sahiner MA, Ansari P, Carroll MS, Magee CW, Novak SW, Woicik JC. Xafs as a direct local structural probe in revealing the effects of c presence in b diffusion in siGe layers Materials Research Society Symposium - Proceedings. 810: 481-487. DOI: 10.1557/Proc-810-C11.10  0.408
2004 Suh YS, Carroll MS, Levy RA, Sahiner A, King CA. Phosphorus and Boron Implantation into (100) Germanium Materials Research Society Symposium Proceedings. 809: 243-249. DOI: 10.1557/Proc-809-B8.11  0.321
2004 Stewart EJ, Carroll MS, Sturm JC. Boron segregation and electrical properties in polycrystalline Si 1-x-yGe xC y and Si 1-yC y alloys Journal of Applied Physics. 95: 4029-4035. DOI: 10.1063/1.1649452  0.702
2003 Carroll MS, King CA. Dependence of the electron minority carrier lifetime on interstitial oxygen and substitutional carbon in pseudomorphically strained SiGeC heterostructures Journal of Applied Physics. 93: 1656-1660. DOI: 10.1063/1.1536025  0.361
2002 Carroll MS, Sturm JC. Quantification of substitutional carbon loss from Si0.998C 0.002 due to silicon self-interstitial injection during oxidation Applied Physics Letters. 81: 1225-1227. DOI: 10.1063/1.1500411  0.639
2002 Napolitani E, De Salvador D, Coati A, Berti M, Drigo AV, Carroll MS, Sturm JC, Stangl J, Bauer G, Spinella C. Diffusion and clustering of supersaturated carbon in SiGeC layers under oxidation Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions With Materials and Atoms. 186: 212-217. DOI: 10.1016/S0168-583X(01)00868-0  0.416
2002 De Salvador D, Coati A, Napolitani E, Berti M, Drigo AV, Carroll MS, Sturm JC, Stangl J, Bauer G, Lazzarini L. Carbon precipitation and diffusion in SiGeC alloys under silicon self-interstitial injection Applied Physics a: Materials Science and Processing. 75: 667-672. DOI: 10.1007/S003390201291  0.443
2002 Carroll MS, Sturm JC, Napolitani E, De Salvador D, Berti M. Thermal stability and substitutional carbon incorporation far above solid-solubility in Si1-xCx and Si1-x-yGexCy layers grown by chemical vapor deposition using disilane Materials Research Society Symposium - Proceedings. 717: 155-161.  0.393
2001 Stewart EJ, Carroll MS, Sturm JC. Boron segregation and electrical properties in polycrystalline SiGeC Materials Research Society Symposium - Proceedings. 669: J691-J696. DOI: 10.1557/Proc-669-J6.9  0.673
2001 De Salvador D, Napolitani E, Coati A, Berti M, Drigo AV, Carroll M, Sturm JC, Stangl J, Bauer G, Lazzarini L. Carbon diffusion and clustering in SiGeC layers under thermal oxidation Materials Research Society Symposium - Proceedings. 669: J681-J686. DOI: 10.1557/Proc-669-J6.8  0.426
2001 Carroll MS, Sturm JC, Napolitani E, Salvador DD, Berti M, Stangl J, Bauer G, Tweet DJ. Silicon Interstitial Driven Loss of Substitutional Carbon from SiGeC Structures Mrs Proceedings. 669. DOI: 10.1557/PROC-669-J6.7  0.562
2001 Carroll MS, Sturm JC, Napolitani E, De Salvador D, Berti M, Stangl J, Bauer G, Tweet DJ. Silicon interstitial driven loss of substitutional carbon from SiGeC structures Materials Research Society Symposium - Proceedings. 669: J671-J676. DOI: 10.1557/Proc-669-J6.7  0.47
2001 Stewart EJ, Carroll MS, Sturm JC. Suppression of boron penetration in P-channel MOSFETs using polycrystalline Si1-x-yGexCy gate layers Ieee Electron Device Letters. 22: 574-576. DOI: 10.1109/55.974581  0.672
2001 Carroll MS, Sturm JC, Büyüklimanli T. Quantitative measurement of the surface silicon interstitial boundary condition and silicon interstitial injection into silicon during oxidation Physical Review B. 64. DOI: 10.1103/PhysRevB.64.085316  0.52
2001 Carroll MS, Sturm JC, Büyüklimanli T. Quantitative measurement of the surface silicon interstitial boundary condition and silicon interstitial injection into silicon during oxidation Physical Review B - Condensed Matter and Materials Physics. 64: 853161-853167. DOI: 10.1103/Physrevb.64.085316  0.465
2001 Carroll MS, Sturm JC, Napolitani E, De Salvador D, Berti M, Stangl J, Bauer G, Tweet DJ. Diffusion enhanced carbon loss from SiGeC layers due to oxidation Physical Review B. 64. DOI: 10.1103/PhysRevB.64.073308  0.483
2001 Carroll MS, Sturm JC, Napolitani E, De Salvador D, Berti M, Stangl J, Bauer G, Tweet DJ. Diffusion enhanced carbon loss from SiGeC layers due to oxidation Physical Review B - Condensed Matter and Materials Physics. 64: 733081-733084. DOI: 10.1103/Physrevb.64.073308  0.482
2000 Carroll MS, Sturm JC. Quantitative measurement of interstitial flux and surface super-saturation during oxidation of silicon Materials Research Society Symposium - Proceedings. 610: B.4.10.1-B.4.10.6. DOI: 10.1557/Proc-610-B4.10  0.457
2000 Carroll MS, Sturm JC, Yang M. Low-temperature preparation of oxygen- and carbon-free silicon and silicon-germanium surfaces for silicon and silicon-germanium epitaxial growth by rapid thermal chemical vapor deposition Journal of the Electrochemical Society. 147: 4652-4659. DOI: 10.1149/1.1394118  0.564
2000 Yang M, Carroll M, Sturm JC, Büyüklimanli T. Phosphorus doping and sharp profiles in silicon and silicon-germanium epitaxy by rapid thermal chemical vapor deposition Journal of the Electrochemical Society. 147: 3541-3545. DOI: 10.1149/1.1393934  0.626
1999 Carroll MS, Sturm JC, Chang CL. Quantitative measurement of reduction of phosphorus diffusion by substitutional carbon incorporation Materials Research Society Symposium - Proceedings. 568: 181-186. DOI: 10.1557/Proc-527-417  0.436
1999 Yang M, Chang CL, Carroll M, Sturm JC. 25-nm p-channel vertical MOSFET's with SiGeC source-drains Ieee Electron Device Letters. 20: 301-303. DOI: 10.1109/55.767105  0.344
1998 Carroll MS, Lanzerotti LD, Sturm JC. Quantitative Measurement of Reduction of Boron Diffusion by Substitutional Carbon Incorporation Mrs Proceedings. 527. DOI: 10.1557/PROC-527-417  0.524
1998 Sturm JC, Yang M, Chang CL, Carroll MS. Novel Applications of Rapid Thermal Chemical Vapor Deposition for Nanoscale MOSFET’s Mrs Proceedings. 525. DOI: 10.1557/PROC-525-273  0.571
1998 Sturm JC, Yang M, Chang CL, Carroll MS. Novel applications of Rapid Thermal Chemical Vapor Deposition for nanoscale MOSFET's Materials Research Society Symposium - Proceedings. 525: 273-281. DOI: 10.1557/Proc-525-273  0.478
1998 Carroll MS, Chang CL, Sturm JC, Büyüklimanli T. Complete suppression of boron transient-enhanced diffusion and oxidation-enhanced diffusion in silicon using localized substitutional carbon incorporation Applied Physics Letters. 73: 3695-3697. DOI: 10.1063/1.122866  0.603
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