| Year |
Citation |
Score |
| 2020 |
Dong B, Yang Y, Shi Q, Xu S, Sun Z, Zhu S, Zhang Z, Kwong DL, Zhou G, Ang KW, Lee C. Wearable Triboelectric-Human-Machine-Interface (THMI) Using Robust Nanophotonic Readout. Acs Nano. PMID 32574036 DOI: 10.1021/Acsnano.0C03728 |
0.308 |
|
| 2020 |
Zhou H, Zhu X, Gu T, Wu J, Deng G, Huang S, Ophir N, Yu M, Kwong D, Zhou S, Bergman K, Wong CW. Error-free data transmission through fast broadband all-optical modulation in graphene–silicon optoelectronics Applied Physics Letters. 116: 221106. DOI: 10.1063/5.0006596 |
0.32 |
|
| 2019 |
Xu Z, Dong Y, Tseng CK, Hu T, Tong J, Zhong Q, Li N, Sim L, Lai KH, Lin Y, Li D, Li Y, Bliznetsov V, Fu YH, Zhu S, ... ... Kwong DL, et al. CMOS-compatible all-Si metasurface polarizing bandpass filters on 12-inch wafers. Optics Express. 27: 26060-26069. PMID 31510466 DOI: 10.1364/Oe.27.026060 |
0.358 |
|
| 2019 |
Dong B, Luo X, Zhu S, Hu T, Li M, Hasan D, Zhang L, Chua SJ, Wei J, Chang Y, Ma Y, Vachon P, Lo GQ, Ang KW, Kwong DL, et al. Thermal annealing study of the mid-infrared aluminum nitride on insulator (AlNOI) photonics platform. Optics Express. 27: 19815-19826. PMID 31503736 DOI: 10.1364/Oe.27.019815 |
0.323 |
|
| 2019 |
Dong B, Luo X, Zhu S, Li M, Hasan D, Zhang L, Chua SJ, Wei J, Chang Y, Lo GQ, Ang KW, Kwong DL, Lee C. Aluminum nitride on insulator (AlNOI) platform for mid-infrared photonics. Optics Letters. 44: 73-76. PMID 30645551 DOI: 10.1364/Ol.44.000073 |
0.343 |
|
| 2019 |
Zheng S, Cai H, Song J, Zou J, Liu PY, Lin Z, Kwong D, Liu A. A Single-Chip Integrated Spectrometer via Tunable Microring Resonator Array Ieee Photonics Journal. 11: 1-9. DOI: 10.1109/Jphot.2019.2939580 |
0.354 |
|
| 2018 |
Yao B, Huang SW, Liu Y, Vinod AK, Choi C, Hoff M, Li Y, Yu M, Feng Z, Kwong DL, Huang Y, Rao Y, Duan X, Wong CW. Gate-tunable frequency combs in graphene-nitride microresonators. Nature. PMID 29892031 DOI: 10.1038/S41586-018-0216-X |
0.324 |
|
| 2018 |
Dong B, Luo X, Hu T, Guo TX, Wang H, Kwong D, Lo PG, Lee C. Compact Low Loss Mid-Infrared Wavelength-Flattened Directional Coupler (WFDC) for Arbitrary Power Splitting Ratio Enabled by Rib Waveguide Dispersion Engineering Ieee Journal of Selected Topics in Quantum Electronics. 24: 1-8. DOI: 10.1109/Jstqe.2018.2811902 |
0.316 |
|
| 2017 |
Huang Y, Flores JGF, Cai Z, Yu M, Kwong DL, Wen G, Churchill L, Wong CW. A low-frequency chip-scale optomechanical oscillator with 58 kHz mechanical stiffening and more than 100(th)-order stable harmonics. Scientific Reports. 7: 4383. PMID 28663563 DOI: 10.1038/S41598-017-04882-4 |
0.304 |
|
| 2016 |
Ogawa K, Goi K, Ishikura N, Ishihara H, Sakamoto S, Liow TY, Tu X, Lo GQ, Kwong DL, Lim ST, Sun MJ, Png CE. Silicon-based phase shifters for high figure of merit in optical modulation Proceedings of Spie - the International Society For Optical Engineering. 9752. DOI: 10.1117/12.2218184 |
0.324 |
|
| 2015 |
Goi K, Oka A, Kusaka H, Ogawa K, Liow TY, Tu X, Lo GQ, Kwong DL. Low-loss partial rib polarization rotator consisting only of silicon core and silica cladding. Optics Letters. 40: 1410-3. PMID 25831345 DOI: 10.1364/Ol.40.001410 |
0.303 |
|
| 2015 |
Ogawa K, Goi K, Oka A, Mashiko Y, Liow TY, Tu X, Lo GQ, Kwong DL, Lim ST, Sun MJ, Png CE. Design and characterisation of high-speed monolithic silicon modulators for digital coherent communication Proceedings of Spie - the International Society For Optical Engineering. 9367. DOI: 10.1117/12.2078080 |
0.337 |
|
| 2015 |
Zhang S, Yen SC, Xiang Z, Liao LD, Kwong DL, Lee C. Development of Silicon Probe With Acute Study on In Vivo Neural Recording and Implantation Behavior Monitored by Integrated Si-Nanowire Strain Sensors Journal of Microelectromechanical Systems. DOI: 10.1109/Jmems.2015.2417678 |
0.35 |
|
| 2014 |
Chen B, Wang X, Gao B, Fang Z, Kang J, Liu L, Liu X, Lo GQ, Kwong DL. Highly compact (4F2) and well behaved nano-pillar transistor controlled resistive switching cell for neuromorphic system application. Scientific Reports. 4: 6863. PMID 25359219 DOI: 10.1038/Srep06863 |
0.528 |
|
| 2014 |
Luan X, Huang Y, Li Y, McMillan JF, Zheng J, Huang SW, Hsieh PC, Gu T, Wang D, Hati A, Howe DA, Wen G, Yu M, Lo G, Kwong DL, et al. An integrated low phase noise radiation-pressure-driven optomechanical oscillator chipset. Scientific Reports. 4: 6842. PMID 25354711 DOI: 10.1038/Srep06842 |
0.303 |
|
| 2014 |
Goi K, Oka A, Kusaka H, Terada Y, Ogawa K, Liow TY, Tu X, Lo GQ, Kwong DL. Low-loss high-speed silicon IQ modulator for QPSK/DQPSK in C and L bands. Optics Express. 22: 10703-9. PMID 24921771 DOI: 10.1364/Oe.22.010703 |
0.325 |
|
| 2014 |
Ogawa K, Ishihara H, Goi K, Mashiko Y, Lim ST, Sun MJ, Seah S, Png CE, Liow TY, Tu X, Lo GQ, Kwong DL. Fundamental characteristics and high-speed applications of carrier-depletion silicon mach-zehnder modulators Ieice Electronics Express. 11. DOI: 10.1587/Elex.11.20142010 |
0.367 |
|
| 2014 |
Kimerling LC, Kwong D, Wada K. Scaling computation with silicon photonics Mrs Bulletin. 39: 687-695. DOI: 10.1557/Mrs.2014.165 |
0.352 |
|
| 2014 |
Park MK, Liu Q, Kim KW, Shin Y, Kee JS, Song J, Lo GQ, Kwong DL. Integrated silicon microring resonator devices for point-of-care diagnostic applications Proceedings of Spie - the International Society For Optical Engineering. 8990. DOI: 10.1117/12.2040908 |
0.351 |
|
| 2014 |
Zhu S, Lin B, Lo GQ, Kwong DL. High-performance to switches on compact cu-dielectric-si hybrid plasmonic WRRs Ieee Photonics Technology Letters. 26: 2495-2498. DOI: 10.1109/Lpt.2014.2359455 |
0.418 |
|
| 2014 |
Fang Z, Wang XP, Sohn J, Weng BB, Zhang ZP, Chen ZX, Tang YZ, Lo GQ, Provine J, Wong SS, Wong HSP, Kwong DL. The role of ti capping layer in HfOx-Based RRAM Devices Ieee Electron Device Letters. 35: 912-914. DOI: 10.1109/Led.2014.2334311 |
0.366 |
|
| 2014 |
Gu T, Zhou H, McMillan JF, Petrone N, Van Der Zande A, Hone JC, Yu M, Lo GQ, Kwong DL, Wong CW. Coherent Four-Wave Mixing on Hybrid Graphene-Silicon Photonic Crystals Ieee Journal On Selected Topics in Quantum Electronics. 20. DOI: 10.1109/Jstqe.2013.2290274 |
0.325 |
|
| 2014 |
Pitchappa P, Pei Ho C, Kropelnicki P, Singh N, Kwong DL, Lee C. Micro-electro-mechanically switchable near infrared complementary metamaterial absorber Applied Physics Letters. 104. DOI: 10.1063/1.4879284 |
0.388 |
|
| 2014 |
Pitchappa P, Ho CP, Kropelnicki P, Singh N, Kwong DL, Lee C. Dual band complementary metamaterial absorber in near infrared region Journal of Applied Physics. 115. DOI: 10.1063/1.4878459 |
0.305 |
|
| 2014 |
Zhang S, Tsang WM, Srinivas M, Sun T, Singh N, Kwong DL, Lee C. Development of silicon electrode enhanced by carbon nanotube and gold nanoparticle composites on silicon neural probe fabricated with complementary metal-oxide-semiconductor process Applied Physics Letters. 104. DOI: 10.1063/1.4875961 |
0.336 |
|
| 2013 |
Goi K, Oda K, Kusaka H, Oka A, Terada Y, Ogawa K, Liow T, Tu X, Lo G, Kwong D. Characterization of Silicon Mach-Zehnder Modulator in 20-Gbps NRZ-BPSK Transmission Ieice Transactions On Electronics. 96: 974-980. DOI: 10.1587/Transele.E96.C.974 |
0.316 |
|
| 2013 |
Goi K, Ogawa K, Tan YT, Dixit V, Lim ST, Png CE, Liow T, Tu X, Lo G, Kwong D. Silicon Mach-Zehnder modulator using low-loss phase shifter with bottom PN junction formed by restricted-depth doping Ieice Electronics Express. 10: 20130552-20130552. DOI: 10.1587/Elex.10.20130552 |
0.313 |
|
| 2013 |
Ogawa K, Goi K, Kusaka H, Terada Y, Liow T, Tu X, Lo G, Kwong D, Dixit V, Lim ST, Png CE. Low-loss high-speed silicon Mach-Zehnder modulator for optical-fiber telecommunications Proceedings of Spie. 8629. DOI: 10.1117/12.2002311 |
0.312 |
|
| 2013 |
Zhu S, Chu H, Lo G, Kwong D. CMOS-Compatible Plasmonic Bragg Reflectors Based on Cu-Dielectric-Si Structures Ieee Photonics Technology Letters. 25: 2115-2118. DOI: 10.1109/Lpt.2013.2281995 |
0.36 |
|
| 2013 |
Zhu S, Lo G, Xie J, Kwong D. Toward Athermal Plasmonic Ring Resonators Based on Cu-${\rm TiO}_{2}$-Si Hybrid Plasmonic Waveguide Ieee Photonics Technology Letters. 25: 1161-1164. DOI: 10.1109/Lpt.2013.2261804 |
0.339 |
|
| 2013 |
Zhang W, Zhu WM, Cai H, Tsai M-J, Lo G, Tsai DP, Tanoto H, Teng J, Zhang X, Kwong D, Liu A. Resonance Switchable Metamaterials Using MEMS Fabrications Ieee Journal of Selected Topics in Quantum Electronics. 19: 4700306-4700306. DOI: 10.1109/Jstqe.2013.2238217 |
0.319 |
|
| 2013 |
Lee J, Sharma J, Singh N, Kwong D. Development and evaluation of a two-level functional structure for the thin film encapsulation Journal of Micromechanics and Microengineering. 23: 075013. DOI: 10.1088/0960-1317/23/7/075013 |
0.325 |
|
| 2013 |
Kwong D. Silicon Device Processing Materials Science and Technology. 407-487. DOI: 10.1002/9783527603978.Mst0263 |
0.4 |
|
| 2012 |
Song J, Luo X, Tu X, Park MK, Kee JS, Zhang H, Yu M, Lo GQ, Kwong DL. Electrical tracing-assisted dual-microring label‑free optical bio/chemical sensors. Optics Express. 20: 4189-97. PMID 22418176 DOI: 10.1364/Oe.20.004189 |
0.324 |
|
| 2012 |
Zhang F, Li X, Gao B, Chen B, Huang P, Fu Y, Chen Y, Liu L, Kang J, Singh N, Guo-Qiang L, Kwong D. Complementary Metal Oxide Semiconductor Compatible Hf-Based Resistive Random Access Memory with Ultralow Switching Current/Power Japanese Journal of Applied Physics. 51: 04DD08. DOI: 10.1143/Jjap.51.04Dd08 |
0.375 |
|
| 2012 |
Zhang X, Rajoo R, Selvanayagam CS, Kumar A, Rao VS, Khan N, Kripesh V, Lau JH, Kwong D, Sundaram V, Tummala RR. Application of Piezoresistive Stress Sensor in Wafer Bumping and Drop Impact Test of Embedded Ultrathin Device Ieee Transactions On Components, Packaging and Manufacturing Technology. 2: 935-943. DOI: 10.1109/Tcpmt.2012.2192731 |
0.31 |
|
| 2012 |
Zhu S, Lo G, Kwong D. Experimental Demonstration of Vertical ${\rm Cu}\hbox{-}{\rm SiO}_{2}\hbox{-}{\rm Si}$ Hybrid Plasmonic Waveguide Components on an SOI Platform Ieee Photonics Technology Letters. 24: 1224-1226. DOI: 10.1109/Lpt.2012.2199979 |
0.397 |
|
| 2012 |
Luo X, Song J, Feng S, Poon AW, Liow T, Yu M, Lo G, Kwong D. Silicon High-Order Coupled-Microring-Based Electro-Optical Switches for On-Chip Optical Interconnects Ieee Photonics Technology Letters. 24: 821-823. DOI: 10.1109/Lpt.2012.2188829 |
0.364 |
|
| 2012 |
Singh P, Miao J, Pott V, Park WT, Kwong DL. Piezoresistive sensing performance of junctionless nanowire FET Ieee Electron Device Letters. 33: 1759-1761. DOI: 10.1109/Led.2012.2217112 |
0.341 |
|
| 2012 |
Kamath A, Chen Z, Shen N, Singh N, Lo GQ, Kwong D, Kasprowicz D, Pfitzner A, Maly W. Realizing and and or Functions With Single Vertical-Slit Field-Effect Transistor Ieee Electron Device Letters. 33: 152-154. DOI: 10.1109/Led.2011.2176309 |
0.376 |
|
| 2012 |
Wang N, Tsai JML, Hsiao FL, Soon BW, Kwong DL, Palaniapan M, Lee C. Micromechanical resonators based on silicon two-dimensional phononic crystals of square lattice Journal of Microelectromechanical Systems. 21: 801-810. DOI: 10.1109/Jmems.2011.2174416 |
0.327 |
|
| 2012 |
Lou L, Zhang S, Park WT, Tsai JM, Kwong DL, Lee C. Optimization of NEMS pressure sensors with a multilayered diaphragm using silicon nanowires as piezoresistive sensing elements Journal of Micromechanics and Microengineering. 22. DOI: 10.1088/0960-1317/22/5/055012 |
0.321 |
|
| 2012 |
Wang N, Hsiao FL, Tsai JM, Palaniapan M, Kwong DL, Lee C. Investigation on the optimized design of alternate-hole-defect for 2D phononic crystal based silicon microresonators Journal of Applied Physics. 112. DOI: 10.1063/1.4740085 |
0.308 |
|
| 2012 |
Yu H, Sun Y, Singh N, Lo G, Kwong D. Perspective of flash memory realized on vertical Si nanowires Microelectronics Reliability. 52: 651-661. DOI: 10.1016/J.Microrel.2011.10.025 |
0.377 |
|
| 2011 |
Li Y, Yu H, Li J, Wong SM, Sun XW, Li X, Cheng C, Fan HJ, Wang J, Singh N, Lo PG, Kwong DL. Novel silicon nanohemisphere-array solar cells with enhanced performance. Small (Weinheim An Der Bergstrasse, Germany). 7: 3138-43. PMID 21898793 DOI: 10.1002/Smll.201100950 |
0.351 |
|
| 2011 |
Lim AE, Liow TY, Qing F, Duan N, Ding L, Yu M, Lo GQ, Kwong DL. Novel evanescent-coupled germanium electro-absorption modulator featuring monolithic integration with germanium p-i-n photodetector. Optics Express. 19: 5040-6. PMID 21445139 DOI: 10.1364/Oe.19.005040 |
0.309 |
|
| 2011 |
Ren FF, Ang KW, Ye J, Yu M, Lo GQ, Kwong DL. Split Bull's eye shaped aluminum antenna for plasmon-enhanced nanometer scale germanium photodetector. Nano Letters. 11: 1289-93. PMID 21306111 DOI: 10.1021/Nl104338Z |
0.325 |
|
| 2011 |
Liow T, Fang Q, Lim AE, Ding L, Zhang QX, Zhang J, Duan N, Song J, Ren F, Cai H, Silalahi STH, Yu M, Lo G, Kwong D. Silicon photonic integrated circuits: from devices to integration Proceedings of Spie. 7942. DOI: 10.1117/12.877905 |
0.397 |
|
| 2011 |
Wong SM, Yu HY, Li Y, Li J, Sun XW, Singh N, Lo PGQ, Kwong D. Boosting Short-Circuit Current With Rationally Designed Periodic Si Nanopillar Surface Texturing for Solar Cells Ieee Transactions On Electron Devices. 58: 3224-3229. DOI: 10.1109/Ted.2011.2159978 |
0.347 |
|
| 2011 |
Wang J, Yu M, Lo G, Kwong D, Lee S. Silicon Waveguide Integrated Germanium JFET Photodetector With Improved Speed Performance Ieee Photonics Technology Letters. 23: 765-767. DOI: 10.1109/Lpt.2011.2132794 |
0.398 |
|
| 2011 |
Fang Q, Song JF, Liow T, Cai H, Yu MB, Lo GQ, Kwong D. Ultralow Power Silicon Photonics Thermo-Optic Switch With Suspended Phase Arms Ieee Photonics Technology Letters. 23: 525-527. DOI: 10.1109/Lpt.2011.2114336 |
0.368 |
|
| 2011 |
Lou L, Park WT, Zhang S, Lim LS, Kwong DL, Lee C. Characterization of silicon nanowire embedded in a mems diaphragm structure within large compressive strain range Ieee Electron Device Letters. 32: 1764-1766. DOI: 10.1109/Led.2011.2169931 |
0.321 |
|
| 2011 |
Singh P, Singh N, Miao J, Park WT, Kwong DL. Gate-all-around junctionless nanowire mosfet with improved low-frequency noise behavior Ieee Electron Device Letters. 32: 1752-1754. DOI: 10.1109/Led.2011.2169645 |
0.349 |
|
| 2011 |
Li X, Chen Z, Shen N, Sarkar D, Singh N, Banerjee K, Lo GQ, Kwong DL. Vertically stacked and independently controlled twin-gate MOSFETs on a single si nanowire Ieee Electron Device Letters. 32: 1492-1494. DOI: 10.1109/Led.2011.2165693 |
0.422 |
|
| 2011 |
Wang N, Tsai JM, Hsiao FL, Soon BW, Kwong DL, Palaniapan M, Lee C. Experimental investigation of a cavity-mode resonator using a micromachined two-dimensional silicon phononic crystal in a square lattice Ieee Electron Device Letters. 32: 821-823. DOI: 10.1109/Led.2011.2136311 |
0.316 |
|
| 2011 |
Singh P, Miao J, Shao L, Kotlanka RK, Park WT, Kwong DL. Microcantilever sensors with embedded piezoresistive transistor read-out: Design and characterization Sensors and Actuators, a: Physical. 171: 178-185. DOI: 10.1016/J.Sna.2011.08.012 |
0.373 |
|
| 2011 |
Lou L, Zhang S, Lim L, Park WT, Feng H, Kwong DL, Lee C. Characteristics of NEMS piezoresistive silicon nanowires pressure sensors with various diaphragm layers Procedia Engineering. 25: 1433-1436. DOI: 10.1016/J.Proeng.2011.12.354 |
0.318 |
|
| 2010 |
Fang Q, Liow TY, Song JF, Tan CW, Yu MB, Lo GQ, Kwong DL. Suspended optical fiber-to-waveguide mode size converter for silicon photonics. Optics Express. 18: 7763-9. PMID 20588617 DOI: 10.1364/Oe.18.007763 |
0.303 |
|
| 2010 |
Fang Q, Liow TY, Song JF, Ang KW, Yu MB, Lo GQ, Kwong DL. WDM multi-channel silicon photonic receiver with 320 Gbps data transmission capability. Optics Express. 18: 5106-13. PMID 20389523 DOI: 10.1364/Oe.18.005106 |
0.349 |
|
| 2010 |
Chatterjee R, Yu M, Stein A, Kwong DL, Kimerling LC, Wong CW. Demonstration of a hitless bypass switch using nanomechanical perturbation for high-bitrate transparent networks. Optics Express. 18: 3045-58. PMID 20174135 DOI: 10.1364/Oe.18.003045 |
0.302 |
|
| 2010 |
Ren F, Ang K, Lo G, Kwong D. Nanometer germanium photodetector with aluminum surface plasmon antenna for enhanced photo-response Proceedings of Spie. 7719. DOI: 10.1117/12.854179 |
0.325 |
|
| 2010 |
Fang Q, Liow T, Ang KW, Phang YT, Yu MB, Lo GQ, Kwong D. 320 Gbps monolithic silicon photonic DWDM receiver Proceedings of Spie. 7719: 771918. DOI: 10.1117/12.854103 |
0.371 |
|
| 2010 |
Ang K, Liow T, Yu M, Fang Q, Song J, Lo GQ, Kwong D. Monolithically fabricated germanium-on-SOI photodetector and Si CMOS circuit for integrated photonic applications Proceedings of Spie. 7719. DOI: 10.1117/12.854101 |
0.399 |
|
| 2010 |
Liow T, Ang K, Fang Q, Song J, Xiong Y, Yu M, Lo G, Kwong D. Monolithic integration and optimization of waveguide silicon modulators and germanium photodetectors Proceedings of Spie. 7719. DOI: 10.1117/12.854097 |
0.406 |
|
| 2010 |
Lim AE, Ang KW, Fang Q, Liow TY, Yu M, Lo GQ, Kwong DL. Design and fabrication of a novel evanescent germanium electro-absorption (EA) modulator Proceedings of Spie - the International Society For Optical Engineering. 7719. DOI: 10.1117/12.854089 |
0.39 |
|
| 2010 |
Wei C, Xiong Y, Zhou X, Singh N, Yuan X, Lo GQ, Chan L, Kwong D. Comparative Study of $\hbox{1}/f$ Noise Degradation Caused by Fowler–Nordheim Tunneling Stress in Silicon Nanowire Transistors and FinFETs Ieee Transactions On Electron Devices. 57: 2774-2779. DOI: 10.1109/Ted.2010.2061853 |
0.342 |
|
| 2010 |
Zhang Q, Zhang J, Yu M, Tan CW, Lo G, Kwong D. A Two-Wafer Approach for Integration of Optical MEMS and Photonics on Silicon Substrate Ieee Photonics Technology Letters. 22: 269-271. DOI: 10.1109/Lpt.2009.2038236 |
0.362 |
|
| 2010 |
Ma F, Rustagi SC, Samudra GS, Zhao H, Singh N, Lo G, Kwong D. Modeling of Stress-Retarded Thermal Oxidation of Nonplanar Silicon Structures for Realization of Nanoscale Devices Ieee Electron Device Letters. 31: 719-721. DOI: 10.1109/Led.2010.2047375 |
0.322 |
|
| 2010 |
Li J, Yu H, Wong SM, Zhang G, Lo G, Kwong D. Si nanocone array optimization on crystalline Si thin films for solar energy harvesting Journal of Physics D: Applied Physics. 43: 255101. DOI: 10.1088/0022-3727/43/25/255101 |
0.338 |
|
| 2009 |
Chin SK, Ligatchev V, Rustagi SC, Zhao H, Samudra GS, Singh N, Lo GQ, Kwong D. Self-Consistent SchrÖdinger–Poisson Simulations on Capacitance–Voltage Characteristics of Silicon Nanowire Gate-All-Around MOS Devices With Experimental Comparisons Ieee Transactions On Electron Devices. 56: 2312-2318. DOI: 10.1109/Ted.2009.2028402 |
0.381 |
|
| 2009 |
Zhao H, Rustagi SC, Ma F, Samudra GS, Singh N, Lo GQ, Kwong D. Charge-Based Capacitance Measurement Technique for Nanoscale Devices: Accuracy Assessment Based on TCAD Simulations Ieee Transactions On Electron Devices. 56: 1157-1160. DOI: 10.1109/Ted.2009.2016396 |
0.323 |
|
| 2009 |
Lim AE-, Kwong D, Yeo Y. Work Function Engineering Within a Single Metal Gate Stack: Manipulating Terbium- and Aluminum-Induced Interface Dipoles of Opposing Polarity Ieee Transactions On Electron Devices. 56: 466-473. DOI: 10.1109/Ted.2008.2011572 |
0.368 |
|
| 2009 |
Fang Q, Song J, Zhang G, Yu M, Liu Y, Lo G, Kwong D. Monolithic Integration of a Multiplexer/Demultiplexer With a Thermo-Optic VOA Array on an SOI Platform Ieee Photonics Technology Letters. 21: 319-321. DOI: 10.1109/Lpt.2008.2011142 |
0.355 |
|
| 2009 |
Wei C, Jiang Y, Xiong Y, Zhou X, Singh N, Rustagi SC, Lo GQ, Kwong D. Impact of Gate Electrodes on $\hbox{1}/f$ Noise of Gate-All-Around Silicon Nanowire Transistors Ieee Electron Device Letters. 30: 1081-1083. DOI: 10.1109/Led.2009.2027614 |
0.367 |
|
| 2009 |
Chen M, Yu HY, Singh N, Sun Y, Shen NS, Yuan X, Lo G, Kwong D. Vertical-Si-Nanowire SONOS Memory for Ultrahigh-Density Application Ieee Electron Device Letters. 30: 879-881. DOI: 10.1109/Led.2009.2024442 |
0.356 |
|
| 2009 |
Wei C, Xiong Y, Zhou X, Singh N, Rustagi SC, Lo GQ, Kwong D. Investigation of Low-Frequency Noise in Silicon Nanowire MOSFETs in the Subthreshold Region Ieee Electron Device Letters. 30: 668-671. DOI: 10.1109/Led.2009.2019975 |
0.339 |
|
| 2009 |
Lo G, Zhu C, Fu J, Kwong D, Singh N. Integration of High- $\kappa$ Dielectrics and Metal Gate on Gate-All-Around Si-Nanowire-Based Architecture for High-Speed Nonvolatile Charge-Trapping Memory Ieee Electron Device Letters. 30: 662-664. DOI: 10.1109/Led.2009.2019254 |
0.426 |
|
| 2009 |
Yang J, Chen J, Wise R, Steinmann P, Yu M, Kwong D, Li M, Yeo Y, Zhu C. Effective Modulation of Quadratic Voltage Coefficient of Capacitance in MIM Capacitors Using $\hbox{Sm}_{2}\hbox{O}_{3}/\hbox{SiO}_{2}$ Dielectric Stack Ieee Electron Device Letters. 30: 460-462. DOI: 10.1109/Led.2009.2015970 |
0.383 |
|
| 2009 |
Zhao H, Kim R, Paul A, Luisier M, Klimeck G, Ma F, Rustagi SC, Samudra GS, Singh N, Lo G, Kwong D. Characterization and Modeling of Subfemtofarad Nanowire Capacitance Using the CBCM Technique Ieee Electron Device Letters. 30: 526-528. DOI: 10.1109/Led.2009.2015588 |
0.335 |
|
| 2009 |
Li J, Yu H, Wong SM, Li X, Zhang G, Lo PG, Kwong D. Design guidelines of periodic Si nanowire arrays for solar cell application Applied Physics Letters. 95: 243113. DOI: 10.1063/1.3275798 |
0.321 |
|
| 2009 |
Li J, Yu H, Wong SM, Zhang G, Sun X, Lo PG, Kwong D. Si nanopillar array optimization on Si thin films for solar energy harvesting Applied Physics Letters. 95: 33102. DOI: 10.1063/1.3186046 |
0.319 |
|
| 2008 |
Lim AE-, Lee RTP, Samudra GS, Kwong D, Yeo Y. Novel Rare-Earth Dielectric Interlayers for Wide NMOS Work-Function Tunability in Ni-FUSI Gates Ieee Transactions On Electron Devices. 55: 2370-2377. DOI: 10.1109/Ted.2008.927391 |
0.393 |
|
| 2008 |
Ang K, Zhu S, Yu M, Lo G, Kwong D. High-Performance Waveguided Ge-on-SOI Metal–Semiconductor–Metal Photodetectors With Novel Silicon–Carbon (Si : C) Schottky Barrier Enhancement Layer Ieee Photonics Technology Letters. 20: 754-756. DOI: 10.1109/Lpt.2008.921092 |
0.413 |
|
| 2008 |
Zang H, Lee S, Yu M, Loh WY, Wang J, Lo G, Kwong D. High-Speed Metal–Germanium–Metal Configured PIN-Like Ge-Photodetector Under Photovoltaic Mode and With Dopant-Segregated Schottky-Contact Engineering Ieee Photonics Technology Letters. 20: 1965-1967. DOI: 10.1109/Lpt.2008.2005586 |
0.371 |
|
| 2008 |
Ang K, Zhu S, Wang J, Chua K, Yu M, Lo G, Kwong D. Novel Silicon-Carbon (Si:C) Schottky Barrier Enhancement Layer for Dark-Current Suppression in Ge-on-SOI MSM Photodetectors Ieee Electron Device Letters. 29: 704-707. DOI: 10.1109/Led.2008.923540 |
0.414 |
|
| 2008 |
Ang K, Yu M, Lo G, Kwong D. Low-Voltage and High-Responsivity Germanium Bipolar Phototransistor for Optical Detections in the Near-Infrared Regime Ieee Electron Device Letters. 29: 1124-1127. DOI: 10.1109/Led.2008.2004469 |
0.361 |
|
| 2008 |
Lim AE, Lee RTP, Samudra GS, Kwong D, Yeo Y. Modification of Molybdenum Gate Electrode Work Function via (La-, Al-Induced) Dipole Effect at High-$k/\hbox{SiO}_{2}$ Interface Ieee Electron Device Letters. 29: 848-851. DOI: 10.1109/Led.2008.2000997 |
0.396 |
|
| 2008 |
Wen HC, Majhi P, Choi K, Park CS, Alshareef HN, Rusty Harris H, Luan H, Niimi H, Park HB, Bersuker G, Lysaght PS, Kwong DL, Song SC, Lee BH, Jammy R. Decoupling the Fermi-level pinning effect and intrinsic limitations on p-type effective work function metal electrodes Microelectronic Engineering. 85: 2-8. DOI: 10.1016/J.Mee.2007.05.006 |
0.583 |
|
| 2007 |
Lim AE, Hwang WS, Wang XP, Lai DMY, Samudra GS, Kwong D, Yeo Y. Metal-Gate Work Function Modulation Using Hafnium Alloys Obtained by the Interdiffusion of Thin Metallic Layers Journal of the Electrochemical Society. 154: H309. DOI: 10.1149/1.2437070 |
0.344 |
|
| 2007 |
Wang XP, Lim AE, Yu HY, Li M, Ren C, Loh W, Zhu CX, Chin A, Trigg AD, Yeo Y, Biesemans S, Lo G, Kwong D. Work Function Tunability of Refractory Metal Nitrides by Lanthanum or Aluminum Doping for Advanced CMOS Devices Ieee Transactions On Electron Devices. 54: 2871-2877. DOI: 10.1109/Ted.2007.907130 |
0.423 |
|
| 2007 |
Liao EB, Li H, Guo LH, Lo G, Kumar R, Balasubramanian N, Kwong D. RF, DC, and Reliability Performance of MIM Capacitors Embedded in Organic Substrates by Wafer-Transfer Technology (WTT) for System-on-Package Applications Ieee Transactions On Electron Devices. 54: 425-432. DOI: 10.1109/Ted.2006.890233 |
0.402 |
|
| 2007 |
Lim AE, Lee RTP, Wang XP, Hwang WS, Tung CH, Samudra GS, Kwong D, Yeo Y. Yttrium- and Terbium-Based Interlayer on $ \hbox{SiO}_{2}$ and $\hbox{HfO}_{2}$ Gate Dielectrics for Work Function Modulation of Nickel Fully Silicided Gate in nMOSFET Ieee Electron Device Letters. 28: 482-485. DOI: 10.1109/Led.2007.896892 |
0.424 |
|
| 2007 |
Bai W, Kwong DL. Charge trapping and TDDB characteristics of ultrathin MOCVD HfO2 gate dielectric on nitrided germanium Ieee Electron Device Letters. 28: 369-372. DOI: 10.1109/Led.2007.894654 |
0.62 |
|
| 2007 |
Wang XP, Yu HY, Li M, Zhu CX, Biesemans S, Chin A, Sun YY, Feng YP, Lim A, Yeo Y, Loh WY, Lo GQ, Kwong D. Wide $V_{\rm fb}$ and $V_{\rm th}$ Tunability for Metal-Gated MOS Devices With HfLaO Gate Dielectrics Ieee Electron Device Letters. 28: 258-260. DOI: 10.1109/Led.2007.891757 |
0.446 |
|
| 2007 |
Yobas L, Ji H, Hui WC, Chen Y, Lim TM, Heng CK, Kwong DL. Nucleic acid extraction, amplification, and detection on si-based microfluidic platforms Ieee Journal of Solid-State Circuits. 42: 1803-1812. DOI: 10.1109/Jssc.2007.900232 |
0.301 |
|
| 2007 |
Whang S, Lee S, Chi D, Yang W, Cho BJ, Liew Y, Kwong D. B-doping of vapour–liquid–solid grown Au-catalysed and Al-catalysed Si nanowires: effects of B2H6 gas during Si nanowire growth and B-doping by a post-synthesis in situ plasma process Nanotechnology. 18: 275302. DOI: 10.1088/0957-4484/18/27/275302 |
0.326 |
|
| 2007 |
Yang X, Husko C, Wong CW, Yu M, Kwong D. Observation of femtojoule optical bistability involving Fano resonances in high-Q∕Vm silicon photonic crystal nanocavities Applied Physics Letters. 91: 051113. DOI: 10.1063/1.2757607 |
0.325 |
|
| 2006 |
Lim AE, Hwang W, Wang X, Kwong D, Yeo Y. Work Function Modulation Using Thin Interdiffused Metal Layers for Dual Metal-Gate Technology The Japan Society of Applied Physics. 2006: 434-435. DOI: 10.7567/Ssdm.2006.P-1-17 |
0.317 |
|
| 2006 |
Loh W, Chen Y, Lee SJ, Bera LK, Yang R, Lo G, Kwong D. Dopant Segregated Pt-Germanide Schottky S/D p-MOSFET with HfO2/TaN gate on Strained Si-SiGe channel The Japan Society of Applied Physics. 2006: 1002-1003. DOI: 10.7567/Ssdm.2006.F-9-1 |
0.301 |
|
| 2006 |
Gao F, Lee S, Li R, Balakumar S, Tung C, Chi D, Kwong D. Schottky Source/Drain Transistor on Thin SiGe on Insulator Integrated with HfO2/TaN Gate Stack Mrs Proceedings. 913. DOI: 10.1557/Proc-0913-D01-04 |
0.39 |
|
| 2006 |
Ling Q, Song Y, Teo EYH, Lim S, Zhu C, Chan DSH, Kwong D, Kang E, Neoh K. WORM-Type Memory Device Based on a Conjugated Copolymer Containing Europium Complex in the Main Chain Electrochemical and Solid-State Letters. 9: G268. DOI: 10.1149/1.2208009 |
0.325 |
|
| 2006 |
Lim AE, Lee RTP, Tung CH, Tripathy S, Kwong D, Yeo Y. Full Silicidation of Silicon Gate Electrodes Using Nickel-Terbium Alloy for MOSFET Applications Journal of the Electrochemical Society. 153: G337. DOI: 10.1149/1.2171827 |
0.388 |
|
| 2006 |
Joo MS, Park CS, Cho BJ, Balasubramanian N, Kwong D. Interface configuration and Fermi-level pinning of fully silicided gate and high-K dielectric stack Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 24: 1341. DOI: 10.1116/1.2198849 |
0.356 |
|
| 2006 |
Shen C, Yang T, Li M, Wang X, Foo CE, Samudra GS, Yeo Y, Kwong D. Fast $V_{\rm th}$ Instability in $\hbox{HfO}_{2}$ Gate Dielectric MOSFETs and Its Impact on Digital Circuits Ieee Transactions On Electron Devices. 53: 3001-3011. DOI: 10.1109/Ted.2006.885680 |
0.317 |
|
| 2006 |
Xiong Y, Yu M, Lo G, Li M, Kwong D. Substrate Effects on Resonant Frequency of Silicon-Based RF On-Chip MIM Capacitor Ieee Transactions On Electron Devices. 53: 2839-2842. DOI: 10.1109/Ted.2006.883677 |
0.376 |
|
| 2006 |
Bai W, Lu N, Ritenour AP, Lee ML, Antoniadis DA, Kwong D. In situ cleaning effect on the electrical properties of Ge MOS devices by Ar gas anneal Ieee Transactions On Electron Devices. 53: 2661-2664. DOI: 10.1109/Ted.2006.882402 |
0.622 |
|
| 2006 |
Bai W, Lu N, Ritenour AP, Lee ML, Antoniadis DA, Kwong D. The electrical properties of HfO/sub 2/ dielectric on germanium and the substrate doping effect Ieee Transactions On Electron Devices. 53: 2551-2558. DOI: 10.1109/Ted.2006.882276 |
0.646 |
|
| 2006 |
Ren C, Chan D, Li M, Loh W, Balakumar S, Tung C, Balasubramanian N, Kwong D. Work Function Tuning and Material Characteristics of Lanthanide-Incorporated Metal Nitride Gate Electrodes for NMOS Device Applications Ieee Transactions On Electron Devices. 53: 1877-1884. DOI: 10.1109/Ted.2006.878017 |
0.381 |
|
| 2006 |
Wang X, Kwong D. A novel high-/spl kappa/ SONOS memory using TaN/Al/sub 2/O/sub 3//Ta/sub 2/O/sub 5//HfO/sub 2//Si structure for fast speed and long retention operation Ieee Transactions On Electron Devices. 53: 78-82. DOI: 10.1109/Ted.2005.860637 |
0.537 |
|
| 2006 |
Wen HC, Harris HR, Young CD, Luan H, Alshareef HN, Choi K, Kwong DL, Majhi P, Bersuker G, Lee BH. On oxygen deficiency and fast transient charge-trapping effects in high-κ dielectrics Ieee Electron Device Letters. 27: 984-987. DOI: 10.1109/Led.2006.886711 |
0.565 |
|
| 2006 |
Wen HC, Choi R, Brown GA, Böscke T, Matthews K, Harris HR, Choi K, Alshareef HN, Luan H, Bersuker G, Majhi P, Kwong DL, Lee BH. Comparison of effective work function extraction methods using capacitance and current measurement techniques Ieee Electron Device Letters. 27: 598-601. DOI: 10.1109/Led.2006.876324 |
0.565 |
|
| 2006 |
Lai Y, Tu C, Kwong D, Chen JS. Charge-transport characteristics in bistable resistive Poly(N-vinylcarbazole) films Ieee Electron Device Letters. 27: 451-453. DOI: 10.1109/Led.2006.874762 |
0.447 |
|
| 2006 |
Tu C, Lai Y, Kwong D. Memory effect in the current-voltage characteristic of 8-hydroquinoline aluminum salt films Ieee Electron Device Letters. 27: 354-356. DOI: 10.1109/Led.2006.872915 |
0.473 |
|
| 2006 |
Wang XP, Li M, Ren C, Yu XF, Shen C, Ma HH, Chin A, Zhu CX, Ning J, Yu MB, Kwong D. Tuning effective metal gate work function by a novel gate dielectric HfLaO for nMOSFETs Ieee Electron Device Letters. 27: 31-33. DOI: 10.1109/Led.2005.859950 |
0.429 |
|
| 2006 |
Tu C, Kwong D, Lai Y. Negative differential resistance and electrical bistability in nanocrystal organic memory devices Applied Physics Letters. 89: 252107. DOI: 10.1063/1.2409366 |
0.493 |
|
| 2006 |
Li H, Price J, Gardner M, Lu N, Kwong D. High permittivity quaternary metal (HfTaTiOx) oxide layer as an alternative high-κ gate dielectric Applied Physics Letters. 89: 103523. DOI: 10.1063/1.2347281 |
0.407 |
|
| 2006 |
Tu C, Lai Y, Kwong D. Electrical switching and transport in the Si/organic monolayer/Au and Si/organic bilayer/Al devices Applied Physics Letters. 89: 62105. DOI: 10.1063/1.2335818 |
0.516 |
|
| 2006 |
Gao F, Lee S, Balakumar S, Du A, Foo Y, Kwong D. Ge diffusion and solid phase epitaxy growth to form Si1−xGex/Si and Ge on insulator structure Thin Solid Films. 504: 69-72. DOI: 10.1016/J.Tsf.2005.09.043 |
0.32 |
|
| 2006 |
Bae SH, Song S, Choi K, Bersuker G, Brown GA, Kwong D, Lee BH. Thickness optimization of the TiN metal gate with polysilicon-capping layer on Hf-based high-k dielectric Microelectronic Engineering. 83: 460-462. DOI: 10.1016/J.Mee.2005.11.010 |
0.392 |
|
| 2005 |
Wen HC, Liu J, Sim JH, Lu JP, Kwong DL. Investigation of dopant effects in CoSi2 and NiSi fully silicided metal gates Electrochemical and Solid-State Letters. 8. DOI: 10.1149/1.1883868 |
0.542 |
|
| 2005 |
Sim JH, Choi R, Lee BH, Young C, Zeitzoff P, Kwong DL, Bersuker G. Trapping/de-trapping gate bias dependence of Hf-silicate dielectrics with poly and TiN gate electrode Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 44: 2420-2423. DOI: 10.1143/Jjap.44.2420 |
0.518 |
|
| 2005 |
Liu J, Wen HC, Lu JP, Kwong DL. The impact of TiN capping layer on NiSi, CoSi2 and CoxNi1-xSi2 FUSI metal gate work function adjustment Ieee Transactions On Electron Devices. 52: 2703-2709. DOI: 10.1109/Ted.2005.859700 |
0.595 |
|
| 2005 |
Low T, Li M, Samudra G, Yeo Y, Zhu C, Chin A, Kwong D. Modeling study of the impact of surface roughness on silicon and Germanium UTB MOSFETs Ieee Transactions On Electron Devices. 52: 2430-2439. DOI: 10.1109/Ted.2005.857188 |
0.348 |
|
| 2005 |
Du G, Liu X, Xia Z, Kang J, Wang Y, Han R, Yu H, Kwong D. Monte Carlo Simulation of p- and n-channel GOI MOSFETs by Solving the Quantum Boltzmann Equation Ieee Transactions On Electron Devices. 52: 2258-2264. DOI: 10.1109/Ted.2005.856806 |
0.336 |
|
| 2005 |
Lee J, Kwong D. Metal Nanocrystal Memory With High-<tex>$kappa$</tex>Tunneling Barrier for Improved Data Retention Ieee Transactions On Electron Devices. 52: 507-511. DOI: 10.1109/Ted.2005.844793 |
0.341 |
|
| 2005 |
Joo MS, Cho BJ, Balasubramanian N, Kwong D. Stoichiometry dependence of Fermi-level pinning in fully silicided (FUSI) NiSi gate on high-K dielectric Ieee Electron Device Letters. 26: 882-884. DOI: 10.1109/Led.2005.859631 |
0.345 |
|
| 2005 |
Kim S, Cho BJ, Yu MB, Li M, Xiong Y, Zhu C, Chin A, Kwong D. Metal-insulator-metal RF bypass capacitor using niobium oxide (Nb/sub 2/O/sub 5/) with HfO/sub 2//Al/sub 2/O/sub 3/ barriers Ieee Electron Device Letters. 26: 625-627. DOI: 10.1109/Led.2005.854378 |
0.338 |
|
| 2005 |
Wang X, Peterson J, Majhi P, Gardner MI, Kwong DL. Impacts of gate electrode materials on threshold voltage (Vth) instability in nMOS HfO2 gate stacks under DC and AC stressing Ieee Electron Device Letters. 26: 553-556. DOI: 10.1109/Led.2005.851819 |
0.544 |
|
| 2005 |
Lai CH, Chin A, Hung BF, Cheng CF, Yoo WJ, Li MF, Zhu C, McAlister SP, Kwong D. A novel program-erasable high-/spl kappa/ AlN-Si MIS capacitor Ieee Electron Device Letters. 26: 148-150. DOI: 10.1109/Led.2004.842100 |
0.391 |
|
| 2005 |
Lu N, Bai W, Ramirez A, Mouli C, Ritenour A, Lee ML, Antoniadis D, Kwong DL. Ge diffusion in Ge metal oxide semiconductor with chemical vapor deposition HfO2 dielectric Applied Physics Letters. 87: 051922. DOI: 10.1063/1.2001757 |
0.572 |
|
| 2005 |
Lee JJ, Harada Y, Pyun JW, Kwong D. Nickel nanocrystal formation on HfO2 dielectric for nonvolatile memory device applications Applied Physics Letters. 86: 103505. DOI: 10.1063/1.1881778 |
0.395 |
|
| 2005 |
Gao F, Lee SJ, Pan JS, Tang LJ, Kwong D. Surface passivation using ultrathin AlNx film for Ge–metal–oxide–semiconductor devices with hafnium oxide gate dielectric Applied Physics Letters. 86: 113501. DOI: 10.1063/1.1875733 |
0.39 |
|
| 2004 |
Yu DS, Cheng CF, Chin A, Zhu C, Li M-, Kwong D. High Performance fully silicided NiSi:Hf gate on LaAlO3/GOI n-MOSFET with Little Fermi-level Pinning The Japan Society of Applied Physics. 2004: 746-747. DOI: 10.7567/Ssdm.2004.B-8-1 |
0.306 |
|
| 2004 |
Yu HY, Ren C, Kang JF, Yeo Y, Chan DSH, Li MF, Kwong D. Thermal Stability of Metal Gate Work Functions The Japan Society of Applied Physics. 2004: 712-713. DOI: 10.7567/Ssdm.2004.A-7-2 |
0.301 |
|
| 2004 |
Wen HC, Sim JH, Lu JP, Kwong DL. Effect of Ni thickness dependence on NiSi FUSI metal gate characteristics Electrochemical and Solid-State Letters. 7. DOI: 10.1149/1.1804983 |
0.548 |
|
| 2004 |
Lee S, Kwong D. Reliability Characteristics of poly Si-gated High Quality Chemical Vapor Deposition Hafnium Oxide Gate Dielectric Japanese Journal of Applied Physics. 43: 427-431. DOI: 10.1143/Jjap.43.427 |
0.403 |
|
| 2004 |
Yu X, Zhu C, Yu M, Kwong D. Improvements on Surface Carrier Mobility and Electrical Stability of MOSFETs Using HfTaO Gate Dielectric Ieee Transactions On Electron Devices. 51: 2154-2160. DOI: 10.1109/Ted.2004.839114 |
0.378 |
|
| 2004 |
Chen JH, Wang YQ, Yoo WJ, Yeo Y, Samudra G, Chan DS, Du AY, Kwong D. Nonvolatile flash memory device using Ge nanocrystals embedded in HfAlO high-/spl kappa/tunneling and control oxides: Device fabrication and electrical performance Ieee Transactions On Electron Devices. 51: 1840-1848. DOI: 10.1109/Ted.2004.837011 |
0.407 |
|
| 2004 |
Hou YT, Li MF, Low T, Kwong DL. Metal gate work function engineering on gate leakage of MOSFETs Ieee Transactions On Electron Devices. 51: 1783-1789. DOI: 10.1109/Ted.2004.836544 |
0.41 |
|
| 2004 |
Wang X, Liu J, Zhu F, Yamada N, Kwong D. A simple approach to fabrication of high-quality HfSiON gate dielectrics with improved nMOSFET performances Ieee Transactions On Electron Devices. 51: 1798-1804. DOI: 10.1109/Ted.2004.836533 |
0.595 |
|
| 2004 |
Ding S, Hu H, Zhu C, Kim SJ, Yu X, Li M, Cho BJ, Chan DSH, Yu MB, Rustagi SC, Chin A, Kwong D. RF, DC, and reliability characteristics of ALD HfO/sub 2/-Al/sub 2/O/sub 3/ laminate MIM capacitors for Si RF IC applications Ieee Transactions On Electron Devices. 51: 886-894. DOI: 10.1109/Ted.2004.827367 |
0.383 |
|
| 2004 |
Yu H, Li M, Kwong D. Thermally robust HfN metal as a promising gate electrode for advanced MOS device applications Ieee Transactions On Electron Devices. 51: 609-615. DOI: 10.1109/Ted.2004.825110 |
0.435 |
|
| 2004 |
Wang X, Liu J, Bai W, Kwong D. A Novel MONOS-Type Nonvolatile Memory Using High-<tex>$kappa$</tex>Dielectrics for Improved Data Retention and Programming Speed Ieee Transactions On Electron Devices. 51: 597-602. DOI: 10.1109/Ted.2004.824684 |
0.702 |
|
| 2004 |
Loh W, Cho BJ, Joo MS, Li M, Chan DSH, Mathew S, Kwong D. Charge trapping and breakdown mechanism in HfAlO/TaN gate stack analyzed using carrier separation Ieee Transactions On Device and Materials Reliability. 4: 696-703. DOI: 10.1109/Tdmr.2004.838416 |
0.342 |
|
| 2004 |
Park C, Cho B, Kwong D. MOS Characteristics of Substituted Al Gate on High-<tex>$kappa$</tex>Dielectric Ieee Electron Device Letters. 25: 725-727. DOI: 10.1109/Led.2004.837537 |
0.383 |
|
| 2004 |
Wang X, Peterson J, Majhi P, Gardner MI, Kwong DL. Threshold voltage (Vth) instability in HfO2 high-κ gate stacks with TiN metal gate: Comparison between NH 3 and O3 interface treatments Ieee Electron Device Letters. 25: 719-721. DOI: 10.1109/Led.2004.836806 |
0.517 |
|
| 2004 |
Joo MS, Cho BJ, Balasubramanian N, Kwong D. Thermal instability of effective work function in metal/high-/spl kappa/ stack and its material dependence Ieee Electron Device Letters. 25: 716-718. DOI: 10.1109/Led.2004.836763 |
0.381 |
|
| 2004 |
Park C, Cho B, Kwong D. MOS Characteristics of Synthesized HfAlON–HfO<tex>$_2$</tex>Stack Using AlN–HfO<tex>$_2$</tex> Ieee Electron Device Letters. 25: 619-621. DOI: 10.1109/Led.2004.834246 |
0.349 |
|
| 2004 |
Kim SJ, Cho BJ, Li M, Ding S, Zhu C, Yu MB, Narayanan B, Chin A, Kwong D. Improvement of voltage linearity in high-/spl kappa/ MIM capacitors using HfO/sub 2/-SiO/sub 2/ stacked dielectric Ieee Electron Device Letters. 25: 538-540. DOI: 10.1109/Led.2004.832785 |
0.365 |
|
| 2004 |
Yu DS, Chiang KC, Cheng CF, Chin A, Zhu C, Li MF, Kwong DL. Fully silicided NiSi:Hf-LaAlO3/SG-GOI n-MOSFETs with high electron mobility Ieee Electron Device Letters. 25: 559-561. DOI: 10.1109/Led.2004.832527 |
0.412 |
|
| 2004 |
Yu X, Zhu C, Li MF, Chin A, Yu MB, Du AY, Kwong D. Mobility enhancement in TaN metal-gate MOSFETs using tantalum incorporated HfO/sub 2/ gate dielectric Ieee Electron Device Letters. 25: 501-503. DOI: 10.1109/Led.2004.831199 |
0.42 |
|
| 2004 |
Park C, Cho B, Kwong D. Thermally Stable Fully Silicided Hf-Silicide Metal-Gate Electrode Ieee Electron Device Letters. 25: 372-374. DOI: 10.1109/Led.2004.829043 |
0.381 |
|
| 2004 |
Yu DS, Huang CH, Chin A, Zhu C, Li MF, Cho BJ, Kwong D. Al/sub 2/O/sub 3/-Ge-on-insulator n- and p-MOSFETs with fully NiSi and NiGe dual gates Ieee Electron Device Letters. 25: 138-140. DOI: 10.1109/Led.2004.824249 |
0.386 |
|
| 2004 |
Yu X, Zhu C, Li MF, Chin A, Du AY, Wang WD, Kwong D. Electrical characteristics and suppressed boron penetration behavior of thermally stable HfTaO gate dielectrics with polycrystalline-silicon gate Applied Physics Letters. 85: 2893-2895. DOI: 10.1063/1.1795369 |
0.404 |
|
| 2004 |
Wang YQ, Chen JH, Yoo WJ, Yeo Y, Kim SJ, Gupta R, Tan ZYL, Kwong D, Du AY, Balasubramanian N. Formation of Ge nanocrystals in HfAlO high-k dielectric and application in memory device Applied Physics Letters. 84: 5407-5409. DOI: 10.1063/1.1767597 |
0.352 |
|
| 2004 |
Gupta R, Yoo WJ, Wang Y, Tan Z, Samudra G, Lee S, Chan DSH, Loh KP, Bera LK, Balasubramanian N, Kwong D. Formation of SiGe nanocrystals in HfO2 using in situ chemical vapor deposition for memory applications Applied Physics Letters. 84: 4331-4333. DOI: 10.1063/1.1758297 |
0.387 |
|
| 2004 |
Park CS, Cho BJ, Balasubramanian N, Kwong D. Feasibility study of using thin aluminum nitride film as a buffer layer for dual metal gate process Thin Solid Films. 462: 15-18. DOI: 10.1016/J.Tsf.2004.05.083 |
0.384 |
|
| 2003 |
Lee S, Kwong D. Dual Poly-Si Gate Metal Oxide Semiconductor Field Effect Transistors Fabricated with High-Quality Chemical Vapor Deposition HfO2Gate Dielectrics Japanese Journal of Applied Physics. 42: 7256-7258. DOI: 10.1143/Jjap.42.7256 |
0.437 |
|
| 2003 |
Chan KT, Chin A, Li M, Kwong D, McAlister SP, Duh DS, Lin WJ, Chang CY. High-performance microwave coplanar bandpass and bandstop filters on Si substrates Ieee Transactions On Microwave Theory and Techniques. 51: 2036-2040. DOI: 10.1109/Tmtt.2003.815890 |
0.304 |
|
| 2003 |
Joo MS, Cho BJ, Yeo CC, Chan DSH, Whoang SJ, Mathew S, Bera LK, Balasubramanian N, Kwong D. Formation of hafnium-aluminum-oxide gate dielectric using single cocktail liquid source in MOCVD process Ieee Transactions On Electron Devices. 50: 2088-2094. DOI: 10.1109/Ted.2003.816920 |
0.343 |
|
| 2003 |
Lee JJ, Wang X, Bai W, Lu N, Kwong D. Theoretical and experimental investigation of Si nanocrystal memory device with HfO/sub 2/ high-k tunneling dielectric Ieee Transactions On Electron Devices. 50: 2067-2072. DOI: 10.1109/Ted.2003.816107 |
0.696 |
|
| 2003 |
Kim D, Prins FE, Kim T, Hwang S, Lee CH, Kwong D, Banerjee SK. Reduction of charge-transport characteristics of SiGe dot floating gate memory device with ZrO/sub 2/ tunneling oxide Ieee Transactions On Electron Devices. 50: 510-513. DOI: 10.1109/Ted.2002.804722 |
0.4 |
|
| 2003 |
Chan KT, Huang CH, Chin A, Li MF, Kwong D, McAlister SP, Duh DS, Lin WJ. Large Q-factor improvement for spiral inductors on silicon using proton implantation Ieee Microwave and Wireless Components Letters. 13: 460-462. DOI: 10.1109/Lmwc.2003.819383 |
0.302 |
|
| 2003 |
Yang MY, Huang CH, Chin A, Zhu C, Cho BJ, Li MF, Kwong D. Very high density RF MIM capacitors (17 fF/μm/sup 2/) using high-/spl kappa/ Al/sub 2/O 3 doped Ta/sub 2/O/sub 5/ dielectrics Ieee Microwave and Wireless Components Letters. 13: 431-433. DOI: 10.1109/Lmwc.2003.818532 |
0.328 |
|
| 2003 |
Ding S, Hu H, Lim HF, Kim SJ, Yu XF, Zhu C, Li MF, Cho BJ, Chan DSH, Rustagi SC, Yu MB, Chin A, Kwong D. High-performance MIM capacitor using ALD high-k HfO 2 -Al 2 O 3 laminate dielectrics Ieee Electron Device Letters. 24: 730-732. DOI: 10.1109/Led.2003.820664 |
0.361 |
|
| 2003 |
Yu DS, Wu CH, Huang CH, Chin A, Chen WJ, Zhu C, Li MF, Kwong D. Fully silicided NiSi and germanided NiGe dual gates on SiO 2 n- and p-MOSFETs Ieee Electron Device Letters. 24: 739-741. DOI: 10.1109/Led.2003.819274 |
0.402 |
|
| 2003 |
Kim SJ, Cho BJ, Li M, Zhu C, Chin A, Kwong D. Lanthanide (Tb)-doped HfO/sub 2/ for high-density MIM capacitors Ieee Electron Device Letters. 24: 442-444. DOI: 10.1109/Led.2003.814024 |
0.372 |
|
| 2003 |
Kim SJ, Cho BJ, Li MF, Yu X, Zhu C, Chin A, Kwong D. PVD HfO 2 for high-precision MIM capacitor applications Ieee Electron Device Letters. 24: 387-389. DOI: 10.1109/Led.2003.813381 |
0.349 |
|
| 2003 |
Yang MY, Huang CH, Chin A, Zhu C, Li MF, Kwong D. High-density MIM capacitors using AlTaO x dielectrics Ieee Electron Device Letters. 24: 306-308. DOI: 10.1109/Led.2003.812572 |
0.337 |
|
| 2003 |
Lin CY, Ma MW, Chin A, Yeo YC, Zhu C, Li MF, Kwong D. Fully silicided NiSi gate on La 2 O 3 MOSFETs Ieee Electron Device Letters. 24: 348-350. DOI: 10.1109/Led.2003.812569 |
0.357 |
|
| 2003 |
Sasaki T, Kuwazawa K, Tanaka K, Kato J, Kwong D. Engineering of nitrogen profile in an ultrathin gate insulator to improve transistor performance and NBTI Ieee Electron Device Letters. 24: 150-152. DOI: 10.1109/Led.2003.809051 |
0.38 |
|
| 2003 |
Yu X, Zhu C, Hu H, Chin A, Li MF, Cho BJ, Kwong D, Foo PD, Yu MB. A high-density MIM capacitor (13 fF/μm/sup 2/) using ALD HfO 2 dielectrics Ieee Electron Device Letters. 24: 63-65. DOI: 10.1109/Led.2002.808159 |
0.378 |
|
| 2002 |
Wang X, Chow LS, Nicholls JM, Kwong DL, Sham JS, Wong YC, Tsao SW. Significance of scheduling on the cytotoxicity of radiation and cisplatin combination treatment in nasopharyngeal carcinoma cells. Anti-Cancer Drugs. 13: 957-64. PMID 12394259 |
0.358 |
|
| 2001 |
Lu Q, Yeo YC, Yang KJ, Lin R, Polishchuk I, King TJ, Hu C, Song SC, Luan HF, Kwong DL, Guo X, Luo Z, Wang X, Tso-Ping M. Two silicon nitride technologies for post-SiO2 MOSFET gate dielectric Ieee Electron Device Letters. 22: 324-326. DOI: 10.1109/55.930679 |
0.39 |
|
| 2001 |
Yeo YC, Lu Q, Ranade P, Takeuchi H, Yang KJ, Polishchuk I, King TJ, Hu C, Song SC, Luan HF, Kwong DL. Dual-metal gate CMOS technology with ultrathin silicon nitride gate dielectric Ieee Electron Device Letters. 22: 227-229. DOI: 10.1109/55.919237 |
0.43 |
|
| 2001 |
Zhong H, Heuss G, Misra V, Luan H, Lee C, Kwong D. Characterization of RuO2 electrodes on Zr silicate and ZrO2 dielectrics Applied Physics Letters. 78: 1134-1136. DOI: 10.1063/1.1347402 |
0.363 |
|
| 2000 |
Wang X, Wang J, Wong SC, Chow LS, Nicholls JM, Wong YC, Liu Y, Kwong DL, Sham JS, Tsa SW. Cytotoxic effect of gossypol on colon carcinoma cells. Life Sciences. 67: 2663-71. PMID 11105982 DOI: 10.1016/S0024-3205(00)00857-2 |
0.361 |
|
| 2000 |
Chow LS, Wang X, Kwong DL, Sham JS, Tsao SW, Nicholls JM. Effect of p16INK4a on chemosensitivity in nasopharyngeal carcinoma cells. International Journal of Oncology. 17: 135-40. PMID 10853030 |
0.364 |
|
| 2000 |
Wang X, Liu Y, Chow LS, Wong SC, Tsao GS, Kwong DL, Sham JS, Nicholls JM. Regulation of telomerase activity by gamma-radiation in nasopharyngeal carcinoma cells. Anticancer Research. 20: 433-7. PMID 10769692 |
0.359 |
|
| 1999 |
Wang X, Liu Y, Chow LS, Wong SC, Tsao SW, Kwong DL, Wang J, Sham JS, Nicholls JM. Cisplatin-induced p53-independent growth arrest and cell death in cancer cells. International Journal of Oncology. 15: 1097-102. PMID 10568814 DOI: 10.3892/ijo.15.6.1097 |
0.355 |
|
| 1998 |
Wang X, Wong SC, Pan J, Tsao SW, Fung KH, Kwong DL, Sham JS, Nicholls JM. Evidence of cisplatin-induced senescent-like growth arrest in nasopharyngeal carcinoma cells. Cancer Research. 58: 5019-22. PMID 9823301 |
0.361 |
|
| 1997 |
Ahn J, Kwong D. Device Performance and Reliability of P-Channel Metal-Oxide-Semiconductor Field Effect Transistors with Chemical-Vapor-Deposited Gate Oxides Japanese Journal of Applied Physics. 36: 4225-4229. DOI: 10.1143/Jjap.36.4225 |
0.399 |
|
| 1995 |
Bhat M, Wristers DJ, Han L, Yan J, Fulford HJ, Kwong D. Electrical properties and reliability of MOSFET's with rapid thermal NO-nitrided SiO/sub 2/ gate dielectrics Ieee Transactions On Electron Devices. 42: 907-914. DOI: 10.1109/16.381987 |
0.398 |
|
| 1994 |
Joshi AB, Kwong DL. Hot Carrier Effects on Analog Performance of N-and P-MOSFET’s With Oxynitride Gate Dielectrics Ieee Transactions On Electron Devices. 41: 1465-1467. DOI: 10.1109/16.297744 |
0.358 |
|
| 1993 |
Joshi AB, Kwong D. Reliability issues in submicron MOSFETs with oxynitride gate dielectrics Microelectronics Reliability. 33: 1845-1866. DOI: 10.1016/0026-2714(93)90090-L |
0.348 |
|
| 1992 |
Mayer RA, Jung KH, Lee WD, Kwong DL, Campbell JC. Thin-film thermo-optic Ge(x)Si(1-x) Mach-Zehnder interferometer. Optics Letters. 17: 1812-4. PMID 19798325 DOI: 10.1364/Ol.17.001812 |
0.342 |
|
| 1991 |
Hwang H, Ting W, Kwong D, Lee J. A physical model for boron penetration through an oxynitride gate dielectric prepared by rapid thermal processing in N2O Applied Physics Letters. 59: 1581-1582. DOI: 10.1063/1.106290 |
0.347 |
|
| 1991 |
Mayer RA, Jung KH, Hsieh TY, Kwong D, Campbell JC. GexSi1−xoptical directional coupler Applied Physics Letters. 58: 2744-2745. DOI: 10.1063/1.104773 |
0.346 |
|
| 1990 |
Batra S, Park K, Banerjee S, Kwong D, Tasch A, Rodder M, Sundaresan R. Rapid thermal hydrogen passivation of polysilicon MOSFETs Ieee Electron Device Letters. 11: 194-196. DOI: 10.1109/55.55247 |
0.328 |
|
| 1989 |
Cheung AW, Lo GQ, Kwong D, Alvi NS, Kermani A. Properties of Thin Inter-Polysilicon Reoxidized Nitrided Oxides Prepared by Rapid Thermal Processing (RTO/RTN/RTO) Mrs Proceedings. 146: 483. DOI: 10.1557/Proc-146-483 |
0.352 |
|
| 1987 |
Alvi NS, Lee SK, Kwong D. Thin polyoxide films grown by rapid thermal processing Ieee Electron Device Letters. 8: 197-199. DOI: 10.1109/Edl.1987.26601 |
0.336 |
|
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