Ning Kong, Ph.D. - Publications
Affiliations: | 2009 | Electrical Engineering | University of Texas at Austin, Austin, Texas, U.S.A. |
Area:
Electronics and Electrical EngineeringYear | Citation | Score | |||
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2009 | Kong N, Kirichenko TA, Hwang GS, Banerjee SK. Arsenic defect complexes at SiO |
0.698 | |||
2009 | Kim Y, Kirichenko TA, Kong N, Henkelman G, Banerjee SK. First-principles studies of small arsenic interstitial complexes in crystalline silicon Physical Review B - Condensed Matter and Materials Physics. 79. DOI: 10.1103/Physrevb.79.075201 | 0.73 | |||
2008 | Kong N, Kirichenko TA, Hwang GS, Banerjee SK. Interstitial-based boron diffusion dynamics in amorphous silicon Applied Physics Letters. 93. DOI: 10.1063/1.2976556 | 0.75 | |||
2008 | Kong N, Kirichenko TA, Kim Y, Foisy MC, Banerjee SK. Physically based kinetic Monte Carlo modeling of arsenic-interstitial interaction and arsenic uphill diffusion during ultrashallow junction formation Journal of Applied Physics. 104. DOI: 10.1063/1.2942398 | 0.736 | |||
2007 | Kong N, Kirichenko TA, Hwang GS, Mark FC, Anderson SGH, Banerjee SK. An Experimental and Simulation Study of Arsenic Diffusion Behavior in Point Defect Engineered Silicon Mrs Proceedings. 994: 307-313. DOI: 10.1557/Proc-0994-F10-02 | 0.728 | |||
2007 | Kong N, Banerjee SK, Kirichenko TA, Anderson SGH, Foisy MC. Enhanced and retarded diffusion of arsenic in silicon by point defect engineering Applied Physics Letters. 90. DOI: 10.1063/1.2450663 | 0.749 | |||
2007 | Kim Y, Kirichenko TA, Kong N, Larson L, Banerjee SK. First-principles studies of di-arsenic interstitial and its implications for arsenic-interstitial diffusion in crystalline silicon Physica B: Condensed Matter. 401: 144-147. DOI: 10.1016/J.Physb.2007.08.132 | 0.746 | |||
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