Year |
Citation |
Score |
2020 |
Noor N, Muneer S, Khan RS, Gorbenko A, Silva H. Amorphized length and variability in phase-change memory line cells. Beilstein Journal of Nanotechnology. 11: 1644-1654. PMID 33178549 DOI: 10.3762/bjnano.11.147 |
0.344 |
|
2020 |
Tripathi S, Kotula P, Singh MK, Ghosh C, Bakan G, Silva H, Carter CB. Role of Oxygen on Chemical Segregation in Uncapped Ge2Sb2Te5 Thin Films on Silicon Nitride Ecs Journal of Solid State Science and Technology. 9: 054007. DOI: 10.1149/2162-8777/Ab9A19 |
0.562 |
|
2020 |
Khan RS, Dirisaglik F, Gokirmak A, Silva H. Resistance drift in Ge2Sb2Te5 phase change memory line cells at low temperatures and its response to photoexcitation Applied Physics Letters. 116: 253501. DOI: 10.1063/1.5144606 |
0.401 |
|
2020 |
Singh M, Ghosh C, Kotula P, Watt J, Silva H, Carter CB. Direct Observation of Phase Transformations in Ge-Sb-Te Materials Microscopy and Microanalysis. 1-5. DOI: 10.1017/S1431927620018036 |
0.323 |
|
2020 |
Cywar A, Woods Z, Kim S, BrightSky M, Sosa N, Zhu Y, Kim HS, Kim HK, Lam C, Gokirmak A, Silva H. Modeling of void formation in phase change memory devices Solid-State Electronics. 164: 107684. DOI: 10.1016/J.Sse.2019.107684 |
0.44 |
|
2019 |
Scoggin J, Woods Z, Silva H, Gokirmak A. Modeling heterogeneous melting in phase change memory devices Applied Physics Letters. 114: 043502. DOI: 10.1063/1.5067397 |
0.416 |
|
2018 |
Akbulut MB, Dirisaglik F, Cywar A, Faraclas A, Pence D, Patel J, Steen S, Nunes RW, Silva H, Gokirmak A. Nanoscale Accumulated Body Si nMOSFETs Ieee Transactions On Electron Devices. 65: 1283-1289. DOI: 10.1109/Ted.2018.2809643 |
0.337 |
|
2018 |
Muneer S, Scoggin J, Dirisaglik F, Adnane L, Cywar A, Bakan G, Cil K, Lam C, Silva H, Gokirmak A. Activation energy of metastable amorphous Ge2Sb2Te5 from room temperature to melt Aip Advances. 8: 065314. DOI: 10.1063/1.5035085 |
0.634 |
|
2018 |
Scoggin J, Khan RS, Silva H, Gokirmak A. Modeling and impacts of the latent heat of phase change and specific heat for phase change materials Applied Physics Letters. 112: 193502. DOI: 10.1063/1.5025331 |
0.432 |
|
2018 |
Tripathi S, Janish M, Dirisaglik F, Cywar A, Zhu Y, Jungjohann K, Silva H, Carter CB. Phase-Change Materials; the Challenges for TEM Microscopy and Microanalysis. 24: 1904-1905. DOI: 10.1017/S1431927618010000 |
0.32 |
|
2017 |
Adnane L, Dirisaglik F, Cywar A, Cil K, Zhu Y, Lam C, Anwar AFM, Gokirmak A, Silva H. High temperature electrical resistivity and Seebeck coefficient of Ge2Sb2Te5 thin films Journal of Applied Physics. 122: 125104. DOI: 10.1063/1.4996218 |
0.48 |
|
2016 |
Deschenes A, Muneer S, Akbulut M, Gokirmak A, Silva H. Analysis of self-heating of thermally assisted spin-transfer torque magnetic random access memory. Beilstein Journal of Nanotechnology. 7: 1676-1683. PMID 28144517 DOI: 10.3762/Bjnano.7.160 |
0.419 |
|
2016 |
Adnane L, Gokirmak A, Silva H. High temperature Hall measurement setup for thin film characterization. The Review of Scientific Instruments. 87: 075117. PMID 27475605 DOI: 10.1063/1.4959222 |
0.383 |
|
2016 |
Kan'an N, Silva H, Gokirmak A. Phase change pipe for nonvolatile routing Ieee Journal of the Electron Devices Society. 4: 72-75. DOI: 10.1109/Jeds.2016.2515026 |
0.389 |
|
2016 |
Dirisaglik F, Bakan G, Muneer S, Williams N, Akbulut M, Silva H, Gokirmak A. Electrical pump-probe characterization technique for phase change materials Device Research Conference - Conference Digest, Drc. 2016. DOI: 10.1109/DRC.2016.7548508 |
0.643 |
|
2016 |
Bakan G, Gerislioglu B, Dirisaglik F, Jurado Z, Sullivan L, Dana A, Lam C, Gokirmak A, Silva H. Extracting the temperature distribution on a phase-change memory cell during crystallization Journal of Applied Physics. 120: 164504. DOI: 10.1063/1.4966168 |
0.675 |
|
2015 |
Noor N, Lucera L, Capuano T, Manthina V, Agrios AG, Silva H, Gokirmak A. Blue and white light emission from zinc oxide nanoforests. Beilstein Journal of Nanotechnology. 6: 2463-9. PMID 26885458 DOI: 10.3762/Bjnano.6.255 |
0.306 |
|
2015 |
Adnane L, Williams N, Silva H, Gokirmak A. High temperature setup for measurements of Seebeck coefficient and electrical resistivity of thin films using inductive heating. The Review of Scientific Instruments. 86: 105119. PMID 26520996 DOI: 10.1063/1.4934577 |
0.429 |
|
2015 |
Dirisaglik F, Bakan G, Jurado Z, Muneer S, Akbulut M, Rarey J, Sullivan L, Wennberg M, King A, Zhang L, Nowak R, Lam C, Silva H, Gokirmak A. High speed, high temperature electrical characterization of phase change materials: metastable phases, crystallization dynamics, and resistance drift. Nanoscale. PMID 26415716 DOI: 10.1039/C5Nr05512A |
0.68 |
|
2015 |
Akbulut MB, Silva H, Gokirmak A. Three-Dimensional Computational Analysis of Accumulated Body MOSFETs Ieee Transactions On Nanotechnology. 14: 847-853. DOI: 10.1109/Tnano.2015.2451153 |
0.354 |
|
2015 |
Muneer S, Gokirmak A, Silva H. Vacuum-Insulated Self-Aligned Nanowire Phase-Change Memory Devices Ieee Transactions On Electron Devices. DOI: 10.1109/Ted.2015.2414716 |
0.467 |
|
2015 |
Noor N, Manthina V, Cil K, Adnane L, Agrios AG, Gokirmak A, Silva H. Atmospheric pressure microplasmas in ZnO nanoforests under high voltage stress Aip Advances. 5. DOI: 10.1063/1.4932037 |
0.386 |
|
2014 |
Dirisaglik F, Bakan G, Faraclas A, Gokirmak A, Silva H. Numerical modeling of thermoelectric thomson effect in phase change memory bridge structures International Journal of High Speed Electronics and Systems. 23. DOI: 10.1142/S0129156414500049 |
0.675 |
|
2014 |
Faraclas A, Bakan G, Adnane L, Dirisaglik F, Williams NE, Gokirmak A, Silva H. Modeling of thermoelectric effects in phase change memory cells Ieee Transactions On Electron Devices. 61: 372-378. DOI: 10.1109/TED.2013.2296305 |
0.645 |
|
2014 |
Bakan G, Gokirmak A, Silva H. Suppression of thermoelectric Thomson effect in silicon microwires under large electrical bias and implications for phase-change memory devices Journal of Applied Physics. 116. DOI: 10.1063/1.4904746 |
0.674 |
|
2014 |
Trombetta M, Williams NE, Fischer S, Gokirmak A, Silva H. Finite element electro-thermal modelling of nanocrystalline phase change elements using mesh-based crystallinity approach Electronics Letters. 50: 100-101. DOI: 10.1049/El.2013.2253 |
0.455 |
|
2013 |
Bakan G, Khan N, Silva H, Gokirmak A. High-temperature thermoelectric transport at small scales: thermal generation, transport and recombination of minority carriers. Scientific Reports. 3: 2724. PMID 24056703 DOI: 10.1038/Srep02724 |
0.634 |
|
2013 |
Kan'an N, Faraclas A, Williams N, Silva H, Gokirmak A. Computational analysis of rupture-oxide phase-change memory cells Ieee Transactions On Electron Devices. 60: 1649-1655. DOI: 10.1109/Ted.2013.2255130 |
0.406 |
|
2013 |
Cil K, Dirisaglik F, Adnane L, Wennberg M, King A, Faraclas A, Akbulut MB, Zhu Y, Lam C, Gokirmak A, Silva H. Electrical resistivity of liquid Ge2Sb2Te5 based on thin-film and nanoscale device measurements Ieee Transactions On Electron Devices. 60: 433-437. DOI: 10.1109/Ted.2012.2228273 |
0.402 |
|
2013 |
Fischer S, Osorio C, Williams NE, Ayas S, Silva H, Gokirmak A. Percolation transport and filament formation in nanocrystalline silicon nanowires Journal of Applied Physics. 113. DOI: 10.1063/1.4803049 |
0.479 |
|
2013 |
Cil K, Zhu Y, Li J, Lam C, Silva H. Assisted cubic to hexagonal phase transition in GeSbTe thin films on silicon nitride Thin Solid Films. 536: 216-219. DOI: 10.1016/J.Tsf.2013.03.087 |
0.425 |
|
2012 |
Cywar A, Li J, Lam C, Silva H. The impact of heater-recess and load matching in phase change memory mushroom cells. Nanotechnology. 23: 225201. PMID 22571918 DOI: 10.1088/0957-4484/23/22/225201 |
0.465 |
|
2012 |
Silva H, Bakan G, Cywar A, Williams N, Dirisaglik F, Henry N, Gokirmak A. Crystallization of silicon microstructures through rapid self-heating for high-performance electronics on arbitrary substrates Nanoscience and Nanotechnology Letters. 4: 970-976. DOI: 10.1166/Nnl.2012.1438 |
0.652 |
|
2012 |
Bakan G, Adnane L, Gokirmak A, Silva H. Extraction of temperature dependent electrical resistivity and thermal conductivity from silicon microwires self-heated to melting temperature Journal of Applied Physics. 112. DOI: 10.1063/1.4754795 |
0.654 |
|
2012 |
Williams NE, Silva H, Gokirmak A. Finite element analysis of scaling of silicon micro-thermoelectric generators to nanowire dimensions Journal of Renewable and Sustainable Energy. 4. DOI: 10.1063/1.4738592 |
0.436 |
|
2012 |
Peng HK, Cil K, Gokirmak A, Bakan G, Zhu Y, Lai CS, Lam CH, Silva H. Thickness dependence of the amorphous-cubic and cubic-hexagonal phase transition temperatures of GeSbTe thin films on silicon nitride Thin Solid Films. 520: 2976-2978. DOI: 10.1016/J.Tsf.2011.11.033 |
0.629 |
|
2012 |
Cywar A, Gokirmak A, Silva H. Finite element modeling of a nanowire-based oscillator achieved through solid-liquid phase switching for GHz operation Solid-State Electronics. 78: 97-101. DOI: 10.1016/J.Sse.2012.05.067 |
0.406 |
|
2011 |
Williams N, Gokirmak A, Silva H. Finite element simulations on scaling effects of 3D SiGe thermoelectric generators Materials Research Society Symposium Proceedings. 1388: 44-49. DOI: 10.1557/Opl.2012.799 |
0.372 |
|
2011 |
Bakan G, Khan N, Cywar A, Cil K, Akbulut M, Gokirmak A, Silva H. Self-heating of silicon microwires: Crystallization and thermoelectric effects Journal of Materials Research. 26: 1061-1071. DOI: 10.1557/Jmr.2011.32 |
0.668 |
|
2011 |
Dirisaglik F, Bakan G, Gokirmak A, Silva H. Modeling of thermoelectric effects in phase change memory cells 2011 International Semiconductor Device Research Symposium, Isdrs 2011. DOI: 10.1109/Ted.2013.2296305 |
0.705 |
|
2011 |
Faraclas A, Williams N, Gokirmak A, Silva H. Modeling of set and reset operations of phase-change memory cells Ieee Electron Device Letters. 32: 1737-1739. DOI: 10.1109/Led.2011.2168374 |
0.491 |
|
2011 |
Cywar A, Dirisaglik F, Akbulut M, Bakan G, Steen S, Silva H, Gokirmak A. Scaling of silicon phase-change oscillators Ieee Electron Device Letters. 32: 1486-1488. DOI: 10.1109/Led.2011.2164511 |
0.654 |
|
2011 |
Faraclas A, Williams N, Gokirmak A, Silva H. Simulation comparison of reset operation for mushroom phase change memory cells with different access device 2011 International Semiconductor Device Research Symposium, Isdrs 2011. DOI: 10.1109/ISDRS.2011.6135190 |
0.329 |
|
2011 |
Cywar A, Bakan G, Gokirmak A, Silva H. Silicon nanowire-based oscillator achieved through solid-liquid phase switching 2011 International Semiconductor Device Research Symposium, Isdrs 2011. DOI: 10.1109/ISDRS.2011.6135170 |
0.651 |
|
2011 |
Bakan G, Khan N, Silva H, Gokirmak A. Thermoelectric effects in current induced crystallization of silicon microstructures Conference Proceedings of the Society For Experimental Mechanics Series. 4: 9-16. |
0.642 |
|
2010 |
Cywar A, Bakan G, Silva H, Gokirmak A. Nanosecond pulse generation in a silicon microwire Ieee Electron Device Letters. 31: 1362-1364. DOI: 10.1109/Led.2010.2072772 |
0.622 |
|
2009 |
Bakan G, Cil K, Cywar A, Silva H, Gokirmak A. Measurements of liquid silicon resistivity on silicon microwires Materials Research Society Symposium Proceedings. 1178: 43-48. DOI: 10.1557/Proc-1178-Aa06-06 |
0.656 |
|
2009 |
Bakan G, Cywar A, Boztug C, Akbulut MB, Silva H, Gokirmak A. Annealing of nanocrystalline silicon micro-bridges with electrical stress Materials Research Society Symposium Proceedings. 1144: 25-29. DOI: 10.1557/Proc-1144-Ll03-25 |
0.646 |
|
2009 |
Bakan G, Cywar A, Cil K, Dirisaglik F, Silva H, Gokirmak A. Phase-change oscillations in silicon wires Device Research Conference - Conference Digest, Drc. 79-80. DOI: 10.1109/DRC.2009.5354897 |
0.631 |
|
2009 |
Bakan G, Cywar A, Silva H, Gokirmak A. Melting and crystallization of nanocrystalline silicon microwires through rapid self-heating Applied Physics Letters. 94. DOI: 10.1063/1.3159877 |
0.664 |
|
2009 |
Cywar A, Bakan G, Boztug C, Silva H, Gokirmak A. Phase-change oscillations in silicon microwires Applied Physics Letters. 94. DOI: 10.1063/1.3083553 |
0.681 |
|
2008 |
Boztug C, Bakan G, Akbulut M, Gokirmak A, Silva H. Numerical modeling of electrothermal effects in silicon nanowires Materials Research Society Symposium Proceedings. 1083: 29-34. DOI: 10.1557/Proc-1083-R04-11 |
0.671 |
|
2008 |
Fan KM, Lai CS, Silva H, Ai CF, Chen CR. Programming Speed Enhancement by NH[sub 3] Plasma Nitridation of Tunneling Oxide for Ge Nanocrystals Memory Journal of the Electrochemical Society. 155: H889. DOI: 10.1149/1.2975837 |
0.327 |
|
2008 |
Lee KJ, LaComb R, Britton B, Shokooh-Saremi M, Silva H, Donkor E, Ding Y, Magnusson R. Silicon-Layer Guided-Mode Resonance Polarizer With 40-nm Bandwidth Ieee Photonics Technology Letters. 20: 1857-1859. DOI: 10.1109/Lpt.2008.2004777 |
0.3 |
|
2006 |
Silva H, Tiwari S. Random telegraph signal in nanoscale back-side charge trapping memories Applied Physics Letters. 88. DOI: 10.1063/1.2182070 |
0.367 |
|
2005 |
Silva H, Tiwari S. Backside storage non-volatile memories: Ultra-thin silicon layer on a complex thin film structure Materials Research Society Symposium Proceedings. 830: 31-35. DOI: 10.1557/Proc-830-D1.4 |
0.381 |
|
2004 |
Silva H, Kim MK, Avci U, Kumar A, Tiwari S. Nonvolatile Silicon Memory at the Nanoscale Mrs Bulletin. 29: 845-851. DOI: 10.1557/Mrs2004.239 |
0.347 |
|
2004 |
Kim MK, Chae SD, Chae HS, Kim JH, Jeong YS, Lee JW, Silva H, Tiwari S, Kim CW. Ultrashort SONOS memories Ieee Transactions On Nanotechnology. 3: 417-424. DOI: 10.1109/Tnano.2004.834161 |
0.369 |
|
2004 |
Silva H, Tiwari S. A nanoscale memory and transistor using backside trapping Ieee Transactions On Nanotechnology. 3: 264-269. DOI: 10.1109/Tnano.2004.828532 |
0.406 |
|
2000 |
Tiwari S, Wahl J, Silva H, Rana F, Welser J. Small silicon memories: confinement, single-electron,. and interface state considerations Applied Physics a: Materials Science & Processing. 71: 403-414. DOI: 10.1007/S003390000553 |
0.356 |
|
1999 |
Chu V, Silva H, Redondo L, Jesus C, Silva M, Soares J, Conde J. Ion implantation of microcrystalline silicon for low process temperature top gate thin film transistors Thin Solid Films. 337: 203-207. DOI: 10.1016/S0040-6090(98)01177-8 |
0.334 |
|
1997 |
Chu V, Jarego J, Silva H, Silva T, Boucinha M, Brogueira P, Conde JP. Amorphous Silicon Thin-Film Transistors with a Hot-Wire Active-Layer Deposited at High Growth Rate Mrs Proceedings. 467. DOI: 10.1557/Proc-467-905 |
0.356 |
|
1997 |
Chu V, Jarego J, Silva H, Silva T, Reissner M, Brogueira P, Conde JP. Improved mobility of amorphous silicon thin-film transistors deposited by hot-wire chemical vapor deposition on glass substrates Applied Physics Letters. 70: 2714-2716. DOI: 10.1063/1.119001 |
0.371 |
|
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