| Year |
Citation |
Score |
| 2008 |
Kwon Y, Jindal A, Augur R, Seok J, Cale TS, Gutmann RJ, Lu JQ. Evaluation of BCB bonded and thinned wafer stacks for three-dimensional integration Journal of the Electrochemical Society. 155. DOI: 10.1149/1.2844449 |
0.609 |
|
| 2008 |
Cale TS, Lu JQ, Gutmann RJ. Three-dimensional integration in microelectronics: Motivation, processing, and thermomechanical modeling Chemical Engineering Communications. 195: 847-888. DOI: 10.1080/00986440801930302 |
0.323 |
|
| 2008 |
Bloomfield MO, Bentz DN, Cale TS. Stress-induced grain boundary migration in polycrystalline copper Journal of Electronic Materials. 37: 249-263. DOI: 10.1007/S11664-007-0354-7 |
0.731 |
|
| 2007 |
Kwon Y, Seok J, Lu JQ, Cale TS, Gutmann RJ. Critical adhesion energy at the interface between benzocyclobutene and silicon nitride layers Journal of the Electrochemical Society. 154. DOI: 10.1149/1.2717504 |
0.634 |
|
| 2007 |
Gobbert MK, Cale TS. Modeling multiscale effects on transients during chemical vapor deposition Surface and Coatings Technology. 201: 8830-8837. DOI: 10.1016/J.Surfcoat.2007.05.005 |
0.388 |
|
| 2007 |
Cale TS, Bloomfield MO, Gobbert MK. Two deterministic approaches to topography evolution Surface and Coatings Technology. 201: 8873-8877. DOI: 10.1016/J.Surfcoat.2007.04.093 |
0.742 |
|
| 2007 |
Bloomfield MO, Bentz DN, Lu JQ, Gutmann RJ, Cale TS. Thermally induced stresses in 3D-IC inter-wafer interconnects: A combined grain-continuum and continuum approach Microelectronic Engineering. 84: 2750-2756. DOI: 10.1016/J.Mee.2007.06.006 |
0.737 |
|
| 2007 |
Gobbert MK, Webster SG, Cale TS. A Galerkin method for the simulation of the transient 2-D/2-D and 3-D/3-D linear Boltzmann equation Journal of Scientific Computing. 30: 237-273. DOI: 10.1007/S10915-005-9069-1 |
0.346 |
|
| 2006 |
Bentz DN, Bloomfield MO, Cale TS. Grain-Focused Microstructure Simulations: Stress-Induced Evolution of Polycrystalline Films Advances in Science and Technology. 45: 1178-1183. DOI: 10.4028/Www.Scientific.Net/Ast.45.1178 |
0.744 |
|
| 2006 |
Gobbert MK, Cale TS. Effect of the Knudsen number on transient times during chemical vapor deposition International Journal For Multiscale Computational Engineering. 4: 319-335. DOI: 10.1615/Intjmultcompeng.V4.I3.30 |
0.407 |
|
| 2006 |
Lee SH, Niklaus F, McMahon JJ, Yu J, Kumar RJ, Li HF, Gutmann RJ, Cale TS, Lu JQ. Fine keyed alignment and bonding for wafer-level 3D ICs Materials Research Society Symposium Proceedings. 914: 433-438. DOI: 10.1557/Proc-0914-F10-05 |
0.313 |
|
| 2006 |
Kwon Y, Seok J, Lu JQ, Cale TS, Gutmann RJ. Critical adhesion energy of benzocyclobutene-bonded wafers Journal of the Electrochemical Society. 153. DOI: 10.1149/1.2172551 |
0.596 |
|
| 2006 |
Niklaus F, Kumar RJ, McMahon JJ, Yu J, Lu JQ, Cale TS, Gutmann RJ. Adhesive wafer bonding using partially cured benzocyclobutene for three-dimensional integration Journal of the Electrochemical Society. 153. DOI: 10.1149/1.2168409 |
0.323 |
|
| 2006 |
Senkevich JJ, Karabacak T, Bae DL, Cale TS. Formation of body-centered-cubic tantalum via sputtering on low- κ dielectrics at low temperatures Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 24: 534-538. DOI: 10.1116/1.2166860 |
0.582 |
|
| 2006 |
Zhang J, Bloomfield MO, Lu JQ, Gutmann RJ, Cale TS. Modeling thermal stresses in 3-D IC interwafer interconnects Ieee Transactions On Semiconductor Manufacturing. 19: 437-448. DOI: 10.1109/Tsm.2006.883587 |
0.729 |
|
| 2006 |
Gobbert MK, Cale TS. A kinetic transport and reaction model and simulator for rarefied gas flow in the transition regime Journal of Computational Physics. 213: 591-612. DOI: 10.1016/J.Jcp.2005.08.026 |
0.328 |
|
| 2006 |
Bentz DN, Bloomfield MO, Lu JQ, Gutmann RJ, Cale TS. Influences of grain structure on thermally induced stresses in 3D IC inter-wafer vias Journal of Computational Electronics. 5: 327-331. DOI: 10.1007/S10825-006-0008-7 |
0.743 |
|
| 2005 |
Kwon Y, Seok J, Lu JQ, Cale TS, Gutmann RJ. Thermal cycling effects on critical adhesion energy and residual stress in benzocyclobutene-bonded wafers Journal of the Electrochemical Society. 152. DOI: 10.1149/1.1869252 |
0.623 |
|
| 2005 |
Jain P, Juneja JS, Bhagwat V, Rymaszewski EJ, Lu TM, Cale TS. Effects of substrate temperature on properties of pulsed dc reactively sputtered tantalum oxide films Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 23: 512-519. DOI: 10.1116/1.1897700 |
0.618 |
|
| 2005 |
Sidhwa A, Spinner C, Gandy T, Goulding M, Brown W, Naseem H, Ulrich R, Ang S, Charlton S, Prasad V, Cale T. Study of the step coverage and contact resistance by using two-step TiN barrier and evolve simulation Ieee Transactions On Semiconductor Manufacturing. 18: 163-173. DOI: 10.1109/Tsm.2004.840524 |
0.379 |
|
| 2005 |
Zhang J, Bloomfield MO, Lu JQ, Gutmann RJ, Cale TS. Thermal stresses in 3D IC inter-wafer interconnects Microelectronic Engineering. 82: 534-547. DOI: 10.1016/J.Mee.2005.07.053 |
0.735 |
|
| 2005 |
Bae DL, Jezewski C, Cale TS, Senkevich JJ. Adhesion of sputter-deposited Ta to porous-methyl silsesquioxane pore sealed with molecular caulk Chemical Vapor Deposition. 11: 191-194. DOI: 10.1002/Cvde.200404198 |
0.562 |
|
| 2004 |
Lu JQ, Rajagopalan G, Gupta M, Cale TS, Gutmann RJ. Planarization issues in wafer-level three-dimensional (3D) integration Materials Research Society Symposium Proceedings. 816: 217-228. DOI: 10.1557/Proc-816-K7.7 |
0.327 |
|
| 2004 |
Kwon Y, Yu J, McMahon JJ, Lu JQ, Cale TS, Gutmann RJ. Evaluation of thin dielectric-glue wafer-bonding for three dimensional integrated circuit-applications Materials Research Society Symposium Proceedings. 812: 321-326. DOI: 10.1557/Proc-812-F6.16 |
0.613 |
|
| 2004 |
Wimplinger M, Lu JQ, Yu J, Kwon Y, Matthias T, Cale TS, Gutmann RJ. Fundamental limits for 3D wafer-to-wafer alignment accuracy Materials Research Society Symposium Proceedings. 812: 309-314. DOI: 10.1557/Proc-812-F6.10 |
0.573 |
|
| 2004 |
Wang J, Huang H, Cale TS. Diffusion barriers on Cu surfaces and near steps Modelling and Simulation in Materials Science and Engineering. 12: 1209-1225. DOI: 10.1088/0965-0393/12/6/014 |
0.301 |
|
| 2004 |
Seok J, Sukam CP, Kim AT, Tichy JA, Cale TS. Material removal model for chemical-mechanical polishing considering wafer flexibility and edge effects Wear. 257: 496-508. DOI: 10.1016/J.Wear.2004.01.011 |
0.346 |
|
| 2004 |
Bloomfield MO, Cale TS. Formation and evolution of grain structures in thin films Microelectronic Engineering. 76: 195-204. DOI: 10.1016/J.Mee.2004.07.054 |
0.748 |
|
| 2004 |
Senkevich JJ, Yang GR, Tang F, Wang GC, Lu TM, Cale TS, Jezewski C, Lanford WA. Substrate-independent sulfur-activated dielectric and barrier-layer surfaces to promote the chemisorption of highly polarizable metallorganics Applied Physics a: Materials Science and Processing. 79: 1789-1796. DOI: 10.1007/S00339-003-2080-1 |
0.341 |
|
| 2003 |
McMahon JJ, Kwon Y, Lu JQ, Cale TS, Gutmann RJ. Bonding characterization of oxidized PDMS thin films Materials Research Society Symposium - Proceedings. 795: 99-104. DOI: 10.1557/Proc-795-U8.3 |
0.604 |
|
| 2003 |
Kim AT, Seok J, Tichy JA, Cale TS. A Multiscale Elastohydrodynamic Contact Model for CMP Journal of the Electrochemical Society. 150. DOI: 10.1149/1.1598215 |
0.351 |
|
| 2003 |
Im YH, Bloomfield MO, Sen S, Cale TS. Modeling pattern density dependent bump formation in copper electrochemical deposition Electrochemical and Solid-State Letters. 6: C42-C46. DOI: 10.1149/1.1541256 |
0.736 |
|
| 2003 |
Bloomfield MO, Im YH, Wang J, Huang H, Cale TS. Development of microstructure in nanostructures and thin films Proceedings of Spie - the International Society For Optical Engineering. 5118: 378-389. DOI: 10.1117/12.499465 |
0.753 |
|
| 2003 |
Kim AT, Seok J, Tichy JA, Cale TS. Soft elastohydrodynamic lubrication with roughness Journal of Tribology. 125: 448-450. DOI: 10.1115/1.1494100 |
0.305 |
|
| 2003 |
Lu JQ, Jindal A, Kwon Y, McMahon JJ, Rasco M, Augur R, Cale TS, Gutmann RJ. Evaluation procedures for wafer bonding and thinning of interconnect test structures for 3D ICs Proceedings of the Ieee 2003 International Interconnect Technology Conference, Iitc 2003. 74-76. DOI: 10.1109/IITC.2003.1219717 |
0.547 |
|
| 2003 |
Bloomfield MO, Richards DF, Cale TS. A computational framework for modelling grain-structure evolution in three dimensions Philosophical Magazine. 83: 3549-3568. DOI: 10.1080/14786430310001599405 |
0.75 |
|
| 2003 |
Jain P, Bhagwat V, Rymaszewski EJ, Lu TM, Berg S, Cale TS. Model relating process variables to film electrical properties for reactively sputtered tantalum oxide thin films Journal of Applied Physics. 93: 3596-3604. DOI: 10.1063/1.1543650 |
0.621 |
|
| 2003 |
Seok J, Kim AT, Sukam CP, Jindal A, Tichy JA, Gutmann RJ, Cale TS. Inverse analysis of material removal data using a multiscale CMP model Microelectronic Engineering. 70: 478-488. DOI: 10.1016/S0167-9317(03)00365-4 |
0.366 |
|
| 2003 |
Seok J, Sukam CP, Kim AT, Tichy JA, Cale TS. Multiscale material removal modeling of chemical mechanical polishing Wear. 254: 307-320. DOI: 10.1016/S0043-1648(03)00022-X |
0.335 |
|
| 2002 |
Kwon Y, Lu JQ, Kraft RP, McDonald JF, Gutmann RJ, Cale TS. Wafer bonding using dielectric polymer thin films in 3D integration Materials Research Society Symposium - Proceedings. 710: 231-236. DOI: 10.1557/Proc-710-Dd12.18.1 |
0.584 |
|
| 2002 |
Gobbert MK, Webster SG, Cale TS. Transient adsorption and desorption in micrometer scale features Journal of the Electrochemical Society. 149. DOI: 10.1149/1.1486452 |
0.314 |
|
| 2002 |
Soukane S, Sen S, Cale TS. Feature superfilling in copper electrochemical deposition Journal of the Electrochemical Society. 149. DOI: 10.1149/1.1426401 |
0.412 |
|
| 2002 |
Gobbert MK, Prasad V, Cale TS. Modeling and simulation of atomic layer deposition at the feature scale Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 20: 1031-1043. DOI: 10.1116/1.1481754 |
0.319 |
|
| 2002 |
Yang D, Hong J, Richards DF, Cale TS. Nucleation and film growth during copper chemical vapor deposition using the precursor Cu(TMVS)(hfac) Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 20: 495-506. DOI: 10.1116/1.1450590 |
0.386 |
|
| 2002 |
Lu JQ, Kwon Y, Rajagopalan G, Gupta M, McMahon J, Lee KW, Kraft RP, McDonald JF, Cale TS, Gutmann RJ, Xu B, Eisenbraun E, Castracane J, Kaloyeros A. A wafer-scale 3D IC technology platform using dielectric bonding glues and copper damascene patterned inter-wafer interconnects Proceedings of the Ieee 2002 International Interconnect Technology Conference, Iitc 2002. 78-80. DOI: 10.1109/IITC.2002.1014893 |
0.549 |
|
| 2002 |
Cale TS, Bloomfield MO, Richards DF, Jansen KE, Gobbert MK. Integrated multiscale process simulation Computational Materials Science. 23: 3-14. DOI: 10.1016/S0927-0256(01)00216-6 |
0.752 |
|
| 2002 |
Prasad V, Bloomfield MO, Richards DF, Liang H, Cale TS. Modeling and simulation of plasma enhanced processing for integrated circuit fabrication Vacuum. 65: 443-455. DOI: 10.1016/S0042-207X(01)00455-9 |
0.744 |
|
| 2002 |
Rogers BR, Cale TS. Plasma processes in microelectronic device manufacturing Vacuum. 65: 267-279. DOI: 10.1016/S0042-207X(01)00431-6 |
0.336 |
|
| 2002 |
Gobbert MK, Prasad V, Cale TS. Predictive modeling of atomic layer deposition on the feature scale Thin Solid Films. 410: 129-141. DOI: 10.1016/S0040-6090(02)00236-5 |
0.351 |
|
| 2001 |
Richards DF, Bloomfield MO, Sen S, Cale TS. Extension velocities for level set based surface profile evolution Journal of Vacuum Science and Technology. 19: 1630-1635. DOI: 10.1116/1.1380230 |
0.726 |
|
| 2000 |
Bloomfield MO, Cale TS. Modeling of ionized magnetron sputtering of copper Materials Research Society Symposium - Proceedings. 616: 147-152. DOI: 10.1557/Proc-616-147 |
0.389 |
|
| 2000 |
Yang D, Hong J, Cale TS. Evolution of surface morphology during Cu(TMVS)(hfac) sourced copper CVD Materials Research Society Symposium - Proceedings. 612. DOI: 10.1557/Proc-612-D9.16.1 |
0.346 |
|
| 2000 |
Yang D, Kristof JJ, Jonnalagadda R, Rogers BR, Hillman JT, Foster RF, Cale TS. Programmed rate chemical vapor deposition protocols Journal of the Electrochemical Society. 147: 723-730. DOI: 10.1149/1.1393259 |
0.411 |
|
| 2000 |
Labun AH, Moffat HK, Cale TS. Mechanistic feature-scale profile simulation of SiO2 low-pressure chemical vapor deposition by tetraethoxysilane pyrolysis Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 18: 267-278. DOI: 10.1116/1.591182 |
0.41 |
|
| 2000 |
Richards DF, Bloomfield MO, Soukane S, Cale TS. Modeling plasma processes in microelectronics Vacuum. 59: 168-178. DOI: 10.1016/S0042-207X(00)00267-0 |
0.737 |
|
| 2000 |
Merchant TP, Gobbert MK, Cale TS, Borucki LJ. Multiple scale integrated modeling of deposition processes Thin Solid Films. 365: 368-375. DOI: 10.1016/S0040-6090(99)01055-X |
0.395 |
|
| 2000 |
Cale TS, Merchant TP, Borucki LJ, Labun AH. Topography simulation for the virtual wafer fab Thin Solid Films. 365: 152-175. DOI: 10.1016/S0040-6090(00)00756-2 |
0.445 |
|
| 1999 |
Jonnalagadda R, Yang D, Rogers BR, Hillman JT, Foster RF, Cale TS. Programmed substrate temperature ramping to increase nucleation density and decrease surface roughness during metalorganic chemical vapor deposition of aluminum Journal of Materials Research. 14: 1982-1989. DOI: 10.1557/Jmr.1999.0267 |
0.382 |
|
| 1999 |
Cale TS, Richards DF, Yang D. Opportunities for materials modeling in microelectronics: Programmed rate chemical vapor deposition Journal of Computer-Aided Materials Design. 6: 283-309. DOI: 10.1023/A:1008762530690 |
0.396 |
|
| 1999 |
Wang D, Zutshi A, Bibby T, Beaudoin SP, Cale TS. Effects of carrier film physical properties on W CMP Thin Solid Films. 345: 278-283. DOI: 10.1016/S0040-6090(98)01486-2 |
0.378 |
|
| 1998 |
Yang D, Jonnalagadda R, Rogers BR, Hillman JT, Foster RF, Cale TS. Study of factor and interaction effects during programmed rate chemical vapor deposition of aluminum Materials Research Society Symposium - Proceedings. 514: 121-126. DOI: 10.1557/Proc-514-121 |
0.381 |
|
| 1998 |
Gobbert MK, Cale TS, Ringhofer CA. The Combination of Equipment Scale and Feature Scale Models for Chemical Vapor Deposition Via a Homogenization Technique Vlsi Design. 6: 399-403. DOI: 10.1155/1998/24073 |
0.378 |
|
| 1998 |
Taylor DS, Jain MK, Cale TS. Deposition rate dependence of step coverage of sputter deposited aluminum-(1.5%) copper films Journal of Vacuum Science and Technology. 16: 3123-3126. DOI: 10.1116/1.581476 |
0.437 |
|
| 1998 |
Cale TS, Rogers BR, Merchant TP, Borucki LJ. Deposition and etch processes: Continuum film evolution in microelectronics Computational Materials Science. 12: 333-353. DOI: 10.1016/S0927-0256(98)00021-4 |
0.475 |
|
| 1998 |
Yang D, Jonnalagadda R, Rogers BR, Hillman JT, Foster RF, Cale TS. Texture and surface roughness of PRCVD aluminum films Thin Solid Films. 332: 312-318. DOI: 10.1016/S0040-6090(98)01034-7 |
0.412 |
|
| 1998 |
Taylor DS, Jain MK, Cale TS. Deposition rate dependence of step coverage of sputter deposited aluminums 1.5% copper films Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 16: 3123-3126. |
0.33 |
|
| 1997 |
Yang D, Jonnalagadda R, Mahadev V, Cale TS, Hillman JT, Foster RF. The Effects of Temperature Ramping on MOCVD Al Film Properties Mrs Proceedings. 472: 337. DOI: 10.1557/Proc-472-337 |
0.391 |
|
| 1997 |
Gobbert MK, Merchant TP, Borucki LJ, Cale TS. A Multiscale Simulator for Low Pressure Chemical Vapor Deposition Journal of the Electrochemical Society. 144: 3945-3951. DOI: 10.1149/1.1838116 |
0.353 |
|
| 1997 |
Wang D, Lee J, Holland K, Bibby T, Beaudoin S, Cale T. Von Mises Stress in Chemical‐Mechanical Polishing Processes Journal of the Electrochemical Society. 144: 1121-1127. DOI: 10.1149/1.1837542 |
0.348 |
|
| 1997 |
Yang D, Jonnalagadda R, Mahadev V, Cale TS, Hillman JT, Foster RF, Rogers BR. Some effects of temperature ramping on metal organic chemical vapor deposited Al film nucleation Thin Solid Films. 308: 615-620. DOI: 10.1016/S0040-6090(97)00436-7 |
0.394 |
|
| 1997 |
Srinivasa-Murthy C, Wang D, Beaudoin SP, Bibby T, Holland K, Cale TS. Stress distribution in chemical mechanical polishing Thin Solid Films. 308: 533-537. DOI: 10.1016/S0040-6090(97)00433-1 |
0.366 |
|
| 1996 |
Challa A, Drucker J, Cale TS. Morphology of Ag islands grown on GaAs (110) at low coverage: Monte Carlo simulations Materials Research Society Symposium - Proceedings. 399: 103-108. DOI: 10.1557/Proc-399-103 |
0.366 |
|
| 1996 |
Cale TS. Conformality and composition of films deposited at low pressures Chemical Engineering Communications. 152: 261-273. DOI: 10.1557/Proc-389-95 |
0.421 |
|
| 1996 |
Gobbert MK, Ringhofer CA, Cale TS. Mesoscopic scale modeling of microloading during low pressure chemical vapor deposition Journal of the Electrochemical Society. 143: 2624-2631. DOI: 10.1149/1.1837059 |
0.364 |
|
| 1996 |
Liao H, Cale TS. Simulations of metal thin film thermal flow processes Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 14: 2615-2622. DOI: 10.1116/1.588995 |
0.435 |
|
| 1996 |
Virmani M, Levedakis DA, Raupp GB, Cale TS. Feature scale simulation studies of TEOS-sourced remote microwave plasma-enhanced chemical vapor deposition of silicon dioxide: Role of oxygen atom recombination Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 14: 977-983. DOI: 10.1116/1.580066 |
0.334 |
|
| 1996 |
Cale TS, Mahadev V. Feature scale transport and reaction during low-pressure deposition processes Thin Films. 22: 175-276. DOI: 10.1016/S1079-4050(96)80006-8 |
0.437 |
|
| 1995 |
Liao H, Stippel H, Reddy K, Geha S, Brown K, Lindorfer P, Saha S, Lin Z, Cale T. The Effects of Collimator Life Time on the Ti and Tin Film Growth Rates and Conformalities in Sputter Deposition Processes: Experiments and Simulations Mrs Proceedings. 387: 113. DOI: 10.1557/Proc-387-113 |
0.407 |
|
| 1995 |
Toprac AJ, Jones BP, Schlueter J, Cale TS. Modeling of collimated titanium nitride physical vapor deposition using a combined specular-diffuse formulation Materials Research Society Symposium - Proceedings. 355: 575-580. DOI: 10.1557/Proc-355-575 |
0.344 |
|
| 1995 |
Thallikar G, Liao H, Cale TS, Myers FR. Experimental and simulation studies of thermal flow of borophosphosilicate and phosphosilicate glasses Journal of Vacuum Science & Technology B. 13: 1875-1878. DOI: 10.1116/1.587827 |
0.401 |
|
| 1995 |
Raupp GB, Levedakis DA, Cale TS. Conformality of SiO2 films from tetraethoxysilane-sourced remote microwave plasma-enhanced chemical vapor deposition Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 13: 676-680. DOI: 10.1116/1.579806 |
0.347 |
|
| 1995 |
Lin Z, Cale TS. Flux distributions and deposition profiles from hexagonal collimators during sputter deposition Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 13: 2183-2188. DOI: 10.1116/1.579540 |
0.355 |
|
| 1995 |
Rajagopalan G, Dreyer ML, Theodore ND, Cale TS. Improving electromigration reliability in Al-alloy lines Thin Solid Films. 270: 439-444. DOI: 10.1016/0040-6090(96)80074-5 |
0.304 |
|
| 1994 |
Toprac AJ, Wang S, Schlueter J, Cale TS. Simulation of Collimated Titanium Nitride Physical Vapor Deposition using EVOLVE Mrs Proceedings. 337. DOI: 10.1557/Proc-337-547 |
0.373 |
|
| 1994 |
Rogers BR, Tracy CJ, Cale TS. Compositional variation in sputtered Ti–W films due to re‐emission Journal of Vacuum Science & Technology B. 12: 2980-2984. DOI: 10.1116/1.587546 |
0.382 |
|
| 1994 |
Liao H, Cale TS. Low-Knudsen-number transport and deposition xGexlayers on Si substrates by rapid thermal chemical vapor deposition Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 12: 1020-1026. DOI: 10.1116/1.579278 |
0.434 |
|
| 1994 |
Myers FR, Peters MW, Ramaswami M, Cale TS. Transport through multicomponent dual frequency plasma sheaths Thin Solid Films. 253: 522-528. DOI: 10.1016/0040-6090(94)90378-6 |
0.326 |
|
| 1994 |
Bammi R, Cale TS, Grivna G. Development of a gate metal etch process for gallium arsenide wafers Thin Solid Films. 253: 501-507. DOI: 10.1016/0040-6090(94)90374-3 |
0.33 |
|
| 1994 |
Liao H, Cale TS. Numerical simulations of thin film thermal flow Thin Solid Films. 253: 419-424. DOI: 10.1016/0040-6090(94)90359-X |
0.408 |
|
| 1993 |
Jain MK, Cale TS, Gandy TH. Comparison of LPCVD Film Conformalities Predicted by Ballistic Transport-Reaction and Continuum Diffusion-Reaction Models Journal of the Electrochemical Society. 140: 242-247. DOI: 10.1149/1.2056096 |
0.408 |
|
| 1993 |
Cale TS, Jain MK, Taylor DS, Duffin RL, Tracy CJ. Model for surface diffusion of aluminum-(1.5%) copper during sputter deposition Journal of Vacuum Science & Technology B. 11: 311-318. DOI: 10.1116/1.586676 |
0.414 |
|
| 1993 |
Zirkle TE, Wilson SR, Sundaram SL, Cale TS, Raupp GB. In Situ Investigation of Temperature and Bias Dependent Effects on the Oxide Growth of Si and Ge in an Electron Cyclotron Resonance Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 11: 905-910. DOI: 10.1116/1.578325 |
0.378 |
|
| 1993 |
Raupp GB, Levedakis DA, Cale TS. Predicting intrawafer film thickness uniformity in an ultralow pressure chemical vapor deposition reactor Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 11: 3053-3061. DOI: 10.1116/1.578296 |
0.428 |
|
| 1993 |
Cale TS, Park JH, Gandy TH, Raupp GB, Jain MK. Step coverage predictions using combined reactor scale and feature scale models for blanket tungsten LPCVD Chemical Engineering Communications. 119: 197-220. DOI: 10.1080/00986449308936116 |
0.364 |
|
| 1993 |
Liao H, Cale TS. Three-dimensional simulation of an isolation trench refill process Thin Solid Films. 236: 352-358. DOI: 10.1016/0040-6090(93)90695-L |
0.424 |
|
| 1993 |
Rogers BR, Cale TS. Spatial composition variation in sputtered TiW films Thin Solid Films. 236: 334-340. DOI: 10.1016/0040-6090(93)90692-I |
0.359 |
|
| 1993 |
Cale TS, Chaara MB, Raupp GB, Raaijmakers IJ. Kinetics and conformality of TiN films from TDEAT and ammonia Thin Solid Films. 236: 294-300. DOI: 10.1016/0040-6090(93)90685-I |
0.402 |
|
| 1993 |
Pillote CL, Shemansky FA, Cale TS, Raupp GB. Characterization of phosphosilicate glass films obtained using plasma-enhanced chemical vapor deposition from tetraethylorthosilicate and trimethylphosphite Thin Solid Films. 236: 287-293. DOI: 10.1016/0040-6090(93)90684-H |
0.375 |
|
| 1992 |
Cale TS, Chaara MB, Hasper A. Estimating Local Deposition Conditions and Kinetic Parameters Using Film Profiles Mrs Proceedings. 260. DOI: 10.1557/Proc-260-393 |
0.417 |
|
| 1992 |
Myers FR, Cale TS. A Dual Frequency Plasma Sheath Model Journal of the Electrochemical Society. 139: 3587-3595. DOI: 10.1149/1.2069127 |
0.343 |
|
| 1992 |
Raupp GB, Cale TS, Hey HPW. The role of oxygen excitation and loss in plasma‐enhanced deposition of silicon dioxide from tetraethylorthosilicate Journal of Vacuum Science & Technology B. 10: 37-45. DOI: 10.1116/1.586361 |
0.375 |
|
| 1992 |
Raupp GB, Shemansky FA, Cale TS. Kinetics and mechanism of silicon dioxide deposition through thermal pyrolysis of tetraethoxysilane Journal of Vacuum Science & Technology B. 10: 2422-2430. DOI: 10.1116/1.586034 |
0.423 |
|
| 1992 |
Cale TS, Raupp GB, Gandy TH. Ballistic transport-reaction prediction of film conformality in tetraethoxysilane 02 plasma enhanced deposition of silicon dioxide Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 10: 1128-1134. DOI: 10.1116/1.578214 |
0.415 |
|
| 1992 |
Cale TS, Raupp GB, Chaara MB, Shemansky FA. Reaction mechanism discrimination using experimental film profiles in features Thin Solid Films. 220: 66-72. DOI: 10.1016/0040-6090(92)90550-U |
0.442 |
|
| 1992 |
Zirkle TE, Drowley CI, Cowden WG, Cale TS. PETEOS simulation using EVOLVE, a deposition simulator Thin Solid Films. 220: 45-49. DOI: 10.1016/0040-6090(92)90546-N |
0.435 |
|
| 1992 |
Chaara MB, Cale TS. A method to estimate local deposition conditions using film profiles in features Thin Solid Films. 220: 19-23. DOI: 10.1016/0040-6090(92)90542-J |
0.404 |
|
| 1991 |
Cale TS, Park J-, Raupp GB, Jain MK. Impacts of Temperature and Reactant Flow Rate Transients on LPCVD Tungsten Silicide Film Properties Mrs Proceedings. 224: 171. DOI: 10.1557/Proc-224-171 |
0.33 |
|
| 1991 |
Rogers BR, Cale TS, Wilson SR. Localized corrosion of aluminum-1.5% copper thin films exposed to photoresist developing solutions Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 9: 1616-1621. DOI: 10.1116/1.577670 |
0.335 |
|
| 1991 |
Cale TS, Gandy TH, Raupp GB. A fundamental feature scale model for low pressure deposition processes Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 9: 524-529. DOI: 10.1116/1.577402 |
0.407 |
|
| 1991 |
Raupp GB, Cale TS. The Role of Step Coverage Modeling in Blanket Tungsten LPCVD Process Development Iete Journal of Research. 37: 206-212. DOI: 10.1080/03772063.1991.11436957 |
0.36 |
|
| 1991 |
Cale TS, Mohamed SA. Fundamental Model of Transport and Reaction in a Cylindrical Catalyst Pore Chemical Engineering Communications. 109: 89-108. DOI: 10.1080/00986449108910975 |
0.302 |
|
| 1991 |
Cale TS, Gandy TH, Raupp GB, Ramaswami M. Model predictions of feature-size-dependent step coverages by PVD aluminum: surface diffusion Thin Solid Films. 206: 54-58. DOI: 10.1016/0040-6090(91)90392-B |
0.383 |
|
| 1990 |
Raupp GB, Cale TS, Peter H, Hey W. Mechanism of Plasma-Enhanced Deposition of Silicon Dioxide from Teos/O 2 Mixtures Mrs Proceedings. 204. DOI: 10.1557/Proc-204-495 |
0.364 |
|
| 1990 |
Cale TS, Raupp GB. Modified Line-of-Sight Model for Deposition of Tungsten Silicide Barrier Layers Mrs Proceedings. 181. DOI: 10.1557/Proc-181-603 |
0.313 |
|
| 1990 |
Cale TS, Raupp GB, Jain MK. Deposition of Tungsten Silicide Barrier Layers and Tungsten in Rectangular Vias Mrs Proceedings. 181: 517. DOI: 10.1557/Proc-181-517 |
0.381 |
|
| 1990 |
Cale TS, Jain MK, Raupp GB. Programmed Rate Processing to Increase Throughput in LPCVD Journal of the Electrochemical Society. 137: 1526-1533. DOI: 10.1149/1.2086706 |
0.364 |
|
| 1990 |
Cale TS, Raupp GB. Free molecular transport and deposition in cylindrical features Journal of Vacuum Science & Technology B. 8: 649-655. DOI: 10.1116/1.584990 |
0.41 |
|
| 1990 |
Cale TS, Raupp GB. A unified line‐of‐sight model of deposition in rectangular trenches Journal of Vacuum Science & Technology B. 8: 1242-1248. DOI: 10.1116/1.584901 |
0.423 |
|
| 1990 |
Cale TS, Raupp GB, Gandy TH. Free molecular transport and deposition in long rectangular trenches Journal of Applied Physics. 68: 3645-3652. DOI: 10.1063/1.346328 |
0.414 |
|
| 1990 |
Raupp GB, Cale TS, Jain MK, Rogers B, Srinivas D. Step coverage of tungsten silicide films deposited bylow pressure dichlorosilane reduction of tungsten hexafluoride Thin Solid Films. 193: 234-243. DOI: 10.1016/S0040-6090(05)80032-X |
0.429 |
|
| 1990 |
Cale TS, Jain MK, Raupp GB. Maximizing step coverage during blanket tungsten low pressure chemical vapor deposition Thin Solid Films. 193: 51-60. DOI: 10.1016/S0040-6090(05)80011-2 |
0.367 |
|
| 1989 |
Shemansky FA, Jain MK, Cale TS, Raupp GB. Implications of Rapid Thermal Processing for Step Coverage in Low Pressure Chemical Vapor Deposition Mrs Proceedings. 146. DOI: 10.1557/Proc-146-173 |
0.358 |
|
| 1989 |
Raupp GB, Cale TS. Step coverage prediction in low-pressure Chemical Vapor Deposition Chemistry of Materials. 1: 207-214. DOI: 10.1021/Cm00002A009 |
0.372 |
|
| 1987 |
Cale TS, Lawson JM, Ludlow DK. Low Re Interphase Nu for Axial Dispersion and Bypassing Reactor Models Chemical Engineering Communications. 56: 169-181. DOI: 10.1080/00986448708911944 |
0.632 |
|
| 1985 |
Cale TS, Lawson JM, Ludlow DK. HEAT TRANSFER IN A CATALYTIC REACTOR American Institute of Chemical Engineers, National Meeting. |
0.589 |
|
| 1984 |
Cale TS, Ludlow DK. Application Of Ac Permeametry To Catalytic Crystallite Thermometry Instrumentation Science &Amp; Technology. 13: 183-192. DOI: 10.1080/10739148408544175 |
0.583 |
|
| 1984 |
Cale TS, Ludlow DK. Magnetic crystallite thermometry Journal of Catalysis. 86: 450-453. DOI: 10.1016/0021-9517(84)90393-2 |
0.592 |
|
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