Year |
Citation |
Score |
2011 |
Goncharova LV, Dalponte M, Feng T, Gustafsson T, Garfunkel E, Lysaght PS, Bersuker G. Diffusion and interface growth in hafnium oxide and silicate ultrathin films on Si(001) Physical Review B - Condensed Matter and Materials Physics. 83. DOI: 10.1103/Physrevb.83.115329 |
0.597 |
|
2011 |
Bansal N, Kim YS, Edrey E, Brahlek M, Horibe Y, Iida K, Tanimura M, Li GH, Feng T, Lee HD, Gustafsson T, Andrei E, Oh S. Epitaxial growth of topological insulator Bi2Se3 film on Si(111) with atomically sharp interface Thin Solid Films. 520: 224-229. DOI: 10.1016/J.Tsf.2011.07.033 |
0.565 |
|
2010 |
Zhu X, Lee HD, Feng T, Ahyi AC, Mastrogiovanni D, Wan A, Garfunkel E, Williams JR, Gustafsson T, Feldman LC. Structure and stoichiometry of (0001) 4H-SiC/oxide interface Applied Physics Letters. 97. DOI: 10.1063/1.3481672 |
0.547 |
|
2010 |
Chambers SA, Engelhard MH, Shutthanandan V, Zhu Z, Droubay TC, Qiao L, Sushko PV, Feng T, Lee HD, Gustafsson T, Garfunkel E, Shah AB, Zuo JM, Ramasse QM. Instability, intermixing and electronic structure at the epitaxial LaAlO3SrTiO3(001) heterojunction Surface Science Reports. 65: 317-352. DOI: 10.1016/J.Surfrep.2010.09.001 |
0.533 |
|
2010 |
Lee HD, Feng T, Yu L, Mastrogiovanni D, Wan A, Garfunkel E, Gustafsson T. ALD growth of Al2O3 on GaAs: Oxide reduction, interface structure and CV performance Physica Status Solidi (C) Current Topics in Solid State Physics. 7: 260-263. DOI: 10.1002/Pssc.200982425 |
0.609 |
|
2009 |
Dalponte M, Adam MC, Boudinov HI, Goncharova LV, Feng T, Garfunkel E, Gustafsson T. Effect of excess vacancy concentration on As and Sb doping in Si Journal of Physics D: Applied Physics. 42. DOI: 10.1088/0022-3727/42/16/165106 |
0.542 |
|
2009 |
Lee HD, Feng T, Yu L, Mastrogiovanni D, Wan A, Gustafsson T, Garfunkel E. Reduction of native oxides on GaAs during atomic layer growth of Al 2O3 Applied Physics Letters. 94. DOI: 10.1063/1.3148723 |
0.59 |
|
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