| Year |
Citation |
Score |
| 2020 |
Li S, Jiang Z, Han J, Xu Z, Wang C, Huang H, Yu C, Lee SJ, Pianetta P, Ohldag H, Qiu J, Lee JS, Lin F, Zhao K, Liu Y. Mutual modulation between surface chemistry and bulk microstructure within secondary particles of nickel-rich layered oxides. Nature Communications. 11: 4433. PMID 32895388 DOI: 10.1038/S41467-020-18278-Y |
0.385 |
|
| 2020 |
Jiang Z, Li S, Xu Z, Nordlund D, Ohldag H, Pianetta P, Lee J, Lin F, Liu Y. Revealing the inhomogeneous surface chemistry on the spherical layered oxide polycrystalline cathode particles Chinese Physics B. 29: 26103. DOI: 10.1088/1674-1056/Ab6585 |
0.311 |
|
| 2020 |
Hong Y, Huang X, Wei C, Wang J, Zhang J, Yan H, Chu YS, Pianetta P, Xiao R, Yu X, Liu Y, Li H. Hierarchical Defect Engineering for LiCoO2 through Low-Solubility Trace Element Doping Chem. DOI: 10.1016/J.Chempr.2020.07.017 |
0.301 |
|
| 2019 |
Schindler P, Riley DC, Bargatin I, Sahasrabuddhe K, Schwede JW, Sun S, Pianetta P, Shen ZX, Howe RT, Melosh NA. Surface Photovoltage-Induced Ultralow Work Function Material for Thermionic Energy Converters. Acs Energy Letters. 4: 2436-2443. PMID 31633034 DOI: 10.1021/Acsenergylett.9B01214 |
0.488 |
|
| 2019 |
Li S, Lee SJ, Wang X, Yang W, Huang H, Swetz DS, Doriese WB, O'Neil GC, Ullom JN, Titus CJ, Irwin KD, Lee HK, Nordlund D, Pianetta PA, Yu C, et al. Surface-to-bulk redox coupling through thermally-driven Li redistribution in Li- and Mn-rich layered cathode materials. Journal of the American Chemical Society. PMID 31287957 DOI: 10.1021/Jacs.9B05349 |
0.318 |
|
| 2018 |
Yu H, Xia S, Wei C, Mao Y, Larsson D, Xiao X, Pianetta P, Yu YS, Liu Y. Automatic projection image registration for nanoscale X-ray tomographic reconstruction. Journal of Synchrotron Radiation. 25: 1819-1826. PMID 30407194 DOI: 10.1107/S1600577518013929 |
0.308 |
|
| 2018 |
Fadley C, Hussain Z, Pianetta P. LBNL/SLAC Conference Looks at New Aspects of Photoemission with Hard X-rays Synchrotron Radiation News. 31: 12-15. DOI: 10.1080/08940886.2018.1409549 |
0.314 |
|
| 2017 |
Singh A, Luening K, Brennan S, Homma T, Kubo N, Nowak SH, Pianetta P. Determination of copper nanoparticle size distributions with total reflection X-ray fluorescence spectroscopy. Journal of Synchrotron Radiation. 24: 283-287. PMID 28009568 DOI: 10.1107/S1600577516015484 |
0.516 |
|
| 2017 |
Yuan H, Riley DC, Shen Z, Pianetta PA, Melosh NA, Howe RT. Back-gated graphene anode for more efficient thermionic energy converters Nano Energy. 32: 67-72. DOI: 10.1016/J.Nanoen.2016.12.027 |
0.423 |
|
| 2016 |
Duan X, Yang F, Antono E, Yang W, Pianetta P, Ermon S, Mehta A, Liu Y. Unsupervised Data Mining in nanoscale X-ray Spectro-Microscopic Study of NdFeB Magnet. Scientific Reports. 6: 34406. PMID 27680388 DOI: 10.1038/Srep34406 |
0.332 |
|
| 2016 |
Zhang L, Guo Y, Hassan VV, Tang K, Foad MA, Woicik JC, Pianetta PA, Robertson J, McIntyre PC. Interface Engineering for Atomic Layer Deposited Alumina Gate Dielectric on SiGe Substrates. Acs Applied Materials & Interfaces. PMID 27345195 DOI: 10.1021/Acsami.6B03331 |
0.611 |
|
| 2016 |
Weiland C, Rumaiz AK, Pianetta P, Woicik JC. Recent applications of hard x-ray photoelectron spectroscopy Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 34. DOI: 10.1116/1.4946046 |
0.695 |
|
| 2016 |
Herrera-Gomez A, Aguirre-Tostado FS, Pianetta P. Formation of Si1+ in the early stages of the oxidation of the Si[001] 2 × 1 surface Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 34. DOI: 10.1116/1.4936336 |
0.403 |
|
| 2016 |
Liu Y, Kiss AM, Larsson DH, Yang F, Pianetta P. To get the most out of high resolution X-ray tomography: A review of the post-reconstruction analysis Spectrochimica Acta - Part B Atomic Spectroscopy. 117: 29-41. DOI: 10.1016/J.Sab.2016.01.002 |
0.317 |
|
| 2015 |
Yuan H, Chang S, Bargatin I, Wang NC, Riley DC, Wang H, Schwede JW, Provine J, Pop E, Shen ZX, Pianetta PA, Melosh NA, Howe RT. Engineering Ultra-Low Work Function of Graphene. Nano Letters. 15: 6475-80. PMID 26401728 DOI: 10.1021/Acs.Nanolett.5B01916 |
0.468 |
|
| 2015 |
Pianetta P, Lindau I. Synchrotron Stories from Stanford—From a Parking Lot to First Beam Synchrotron Radiation News. 28: 24-25. DOI: 10.1080/08940886.2015.1059233 |
0.488 |
|
| 2015 |
Cianchetta I, Trentelman K, Maish J, Saunders D, Foran B, Walton M, Sciau P, Wang T, Pouyet E, Cotte M, Meirer F, Liu Y, Pianetta P, Mehta A. Evidence for an unorthodox firing sequence employed by the Berlin Painter: Deciphering ancient ceramic firing conditions through high-resolution material characterization and replication Journal of Analytical Atomic Spectrometry. 30: 666-676. DOI: 10.1039/C4Ja00376D |
0.362 |
|
| 2014 |
Maldonado JR, Cheng YT, Pianetta P, Pease FW, Hesselink L. A cesium bromide photocathode excited by 405 nm radiation Applied Physics Letters. 105. DOI: 10.1063/1.4890538 |
0.318 |
|
| 2013 |
Geyer SM, Methaapanon R, Shong B, Pianetta PA, Bent SF. In Vacuo Photoemission Studies of Platinum Atomic Layer Deposition Using Synchrotron Radiation. The Journal of Physical Chemistry Letters. 4: 176-9. PMID 26291229 DOI: 10.1021/Jz301475Z |
0.356 |
|
| 2013 |
Liu Y, Cats KH, Weker JN, Andrews JC, Weckhuysen BM, Pianetta P. Data-processing strategies for nano-tomography with elemental specification Proceedings of Spie - the International Society For Optical Engineering. 8851. DOI: 10.1117/12.2026436 |
0.323 |
|
| 2013 |
Liu Y, Nelson J, Holzner C, Andrews JC, Pianetta P. Recent advances in synchrotron-based hard x-ray phase contrast imaging Journal of Physics D: Applied Physics. 46. DOI: 10.1088/0022-3727/46/49/494001 |
0.309 |
|
| 2012 |
Liu Y, Wang J, Hong Y, Wang Z, Zhang K, Williams PA, Zhu P, Andrews JC, Pianetta P, Wu Z. Extended depth of focus for transmission x-ray microscope. Optics Letters. 37: 3708-10. PMID 22940998 DOI: 10.1364/Ol.37.003708 |
0.33 |
|
| 2012 |
Liu Y, Meirer F, Wang J, Requena G, Williams P, Nelson J, Mehta A, Andrews JC, Pianetta P. 3D elemental sensitive imaging using transmission X-ray microscopy. Analytical and Bioanalytical Chemistry. 404: 1297-301. PMID 22349401 DOI: 10.1007/S00216-012-5818-9 |
0.339 |
|
| 2012 |
Liu Y, Meirer F, Williams PA, Wang J, Andrews JC, Pianetta P. TXM-Wizard: a program for advanced data collection and evaluation in full-field transmission X-ray microscopy. Journal of Synchrotron Radiation. 19: 281-7. PMID 22338691 DOI: 10.1107/S0909049511049144 |
0.323 |
|
| 2012 |
Meirer F, Giubertoni D, Demenev E, Vanzetti L, Gennaro S, Fedrizzi M, Pepponi G, Mehta A, Pianetta P, Steinhauser G, Vishwanath V, Foad M, Bersani M. Formation of arsenolite crystals at room temperature after very high dose arsenic implantation in silicon Applied Physics Letters. 101. DOI: 10.1063/1.4769446 |
0.322 |
|
| 2012 |
Clay WA, Maldonado JR, Pianetta P, Dahl JEP, Carlson RMK, Schreiner PR, Fokin AA, Tkachenko BA, Melosh NA, Shen ZX. Photocathode device using diamondoid and cesium bromide films Applied Physics Letters. 101. DOI: 10.1063/1.4769043 |
0.482 |
|
| 2012 |
Meirer F, Demenev E, Giubertoni D, Gennaro S, Vanzetti L, Pepponi G, Bersani M, Sahiner MA, Steinhauser G, Foad MA, Woicik JC, Mehta A, Pianetta P. Formation of arsenic rich silicon oxide under plasma immersion ion implantation and laser annealing Aip Conference Proceedings. 1496: 183-188. DOI: 10.1063/1.4766520 |
0.442 |
|
| 2011 |
Meirer F, Cabana J, Liu Y, Mehta A, Andrews JC, Pianetta P. Three-dimensional imaging of chemical phase transformations at the nanoscale with full-field transmission X-ray microscopy. Journal of Synchrotron Radiation. 18: 773-81. PMID 21862859 DOI: 10.1107/S0909049511019364 |
0.336 |
|
| 2011 |
Liu Y, Andrews JC, Wang J, Meirer F, Zhu P, Wu Z, Pianetta P. Phase retrieval using polychromatic illumination for transmission X-ray microscopy. Optics Express. 19: 540-5. PMID 21263593 DOI: 10.1364/Oe.19.000540 |
0.316 |
|
| 2011 |
Andrews JC, Meirer F, Liu Y, Mester Z, Pianetta P. Transmission X-ray microscopy for full-field nano imaging of biomaterials. Microscopy Research and Technique. 74: 671-81. PMID 20734414 DOI: 10.1002/Jemt.20907 |
0.333 |
|
| 2011 |
Maldonado JR, Pease F, Hitzman CJ, Brodie AD, Petric P, Bevis C, McCord M, Tong WM, Kidwingira F, Pianetta P, Bibee M, Mehta A, Bhatia R. Electron bombardment of films used for reducing spurious charge in electrostatic electron optics Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 29. DOI: 10.1116/1.3663957 |
0.344 |
|
| 2011 |
Kuzum D, Krishnamohan T, Nainani A, Sun Y, Pianetta PA, Wong HSP, Saraswat KC. High-mobility Ge N-MOSFETs and mobility degradation mechanisms Ieee Transactions On Electron Devices. 58: 59-66. DOI: 10.1109/Ted.2010.2088124 |
0.464 |
|
| 2011 |
Swaminathan S, Sun Y, Pianetta P, McIntyre PC. Ultrathin ALD-Al2O3 layers for Ge(001) gate stacks: Local composition evolution and dielectric properties Journal of Applied Physics. 110. DOI: 10.1063/1.3647761 |
0.5 |
|
| 2011 |
Nainani A, Sun Y, Irisawa T, Yuan Z, Kobayashi M, Pianetta P, Bennett BR, Brad Boos J, Saraswat KC. Device quality Sb-based compound semiconductor surface: A comparative study of chemical cleaning Journal of Applied Physics. 109. DOI: 10.1063/1.3590167 |
0.543 |
|
| 2011 |
Yuan Z, Nainani A, Sun Y, Lin JYJ, Pianetta P, Saraswat KC. Schottky barrier height reduction for metal/n-GaSb contact by inserting TiO2 interfacial layer with low tunneling resistance Applied Physics Letters. 98. DOI: 10.1063/1.3584862 |
0.458 |
|
| 2011 |
Nelson GJ, Harris WM, Izzo JR, Grew KN, Chiu WKS, Chu YS, Yi J, Andrews JC, Liu Y, Pianetta P. Three-dimensional mapping of nickel oxidation states using full field x-ray absorption near edge structure nanotomography Applied Physics Letters. 98. DOI: 10.1063/1.3574774 |
0.341 |
|
| 2011 |
Nelson GJ, Harris WM, Lombardo JJ, Izzo JR, Chiu WKS, Tanasini P, Cantoni M, Van Herle J, Comninellis C, Andrews JC, Liu Y, Pianetta P, Chu YS. Comparison of SOFC cathode microstructure quantified using X-ray nanotomography and focused ion beam-scanning electron microscopy Electrochemistry Communications. 13: 586-589. DOI: 10.1016/J.Elecom.2011.03.016 |
0.348 |
|
| 2010 |
Schwede JW, Bargatin I, Riley DC, Hardin BE, Rosenthal SJ, Sun Y, Schmitt F, Pianetta P, Howe RT, Shen ZX, Melosh NA. Photon-enhanced thermionic emission for solar concentrator systems. Nature Materials. 9: 762-7. PMID 20676086 DOI: 10.1038/Nmat2814 |
0.543 |
|
| 2010 |
Ardalan P, Sun Y, Pianetta P, Musgrave CB, Bent SF. Reaction mechanism, bonding, and thermal stability of 1-alkanethiols self-assembled on halogenated Ge surfaces. Langmuir : the Acs Journal of Surfaces and Colloids. 26: 8419-29. PMID 20433151 DOI: 10.1021/La904864C |
0.505 |
|
| 2010 |
Chen J, Yang Y, Zhang X, Andrews JC, Pianetta P, Guan Y, Liu G, Xiong Y, Wu Z, Tian Y. 3D nanoscale imaging of the yeast, Schizosaccharomyces pombe, by full-field transmission X-ray microscopy at 5.4 keV. Analytical and Bioanalytical Chemistry. 397: 2117-21. PMID 20349228 DOI: 10.1007/S00216-010-3617-8 |
0.315 |
|
| 2010 |
Baghaei L, Dai B, Pianetta P, Pease RFW. Nondestructive detection of deviation in integrated circuits Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 28: C6Q25-C6Q27. DOI: 10.1116/1.3518464 |
0.323 |
|
| 2010 |
Dai B, Zhu D, Jaroensri R, Kulalert K, Pianetta P, Pease RFW. Optical and computed evaluation of keyhole diffractive imaging for lensless x-ray microscopy Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 28: C6Q1-C6Q5. DOI: 10.1116/1.3501340 |
0.306 |
|
| 2010 |
Toyoda S, Okabayashi J, Komatsu M, Oshima M, Lee DI, Sun S, Sun Y, Pianetta PA, Kukuruznyak D, Chikyow T. Effects of Al doping and annealing on chemical states and band diagram of Y2 O3 /Si gate stacks studied by photoemission and x-ray absorption spectroscopy Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 28: 16-19. DOI: 10.1116/1.3259869 |
0.681 |
|
| 2010 |
Giubertoni D, Pepponi G, Sahiner MA, Kelty SP, Gennaro S, Bersani M, Kah M, Kirkby KJ, Doherty R, Foad MA, Meirer F, Streli C, Woicik JC, Pianetta P. Deactivation of submelt laser annealed arsenic ultrashallow junctions in silicon during subsequent thermal treatment Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 28: C1B1-C1B5. DOI: 10.1116/1.3242637 |
0.56 |
|
| 2010 |
Sun Y, Liu Z, Pianetta P. The dependence of the oxidation enhancement of InP(100) surface on the coverage of the adsorbed Cs Journal of Applied Physics. 107. DOI: 10.1063/1.3452384 |
0.544 |
|
| 2010 |
Kobayashi M, Thareja G, Sun Y, Goel N, Garner M, Tsai W, Pianetta P, Nishi Y. The effects of wet surface clean and in situ interlayer on In 0.52 Al0.48 As metal-oxide-semiconductor characteristics Applied Physics Letters. 96. DOI: 10.1063/1.3379024 |
0.484 |
|
| 2010 |
Meirer F, Singh A, Pianetta P, Pepponi G, Streli C, Homma T. Synchrotron radiation-induced total reflection X-ray fluorescence analysis Trac - Trends in Analytical Chemistry. 29: 479-496. DOI: 10.1016/J.Trac.2010.04.001 |
0.335 |
|
| 2009 |
Patty C, Barnett B, Mooney B, Kahn A, Levy S, Liu Y, Pianetta P, Andrews JC. Using X-ray microscopy and Hg L3 XANES to study Hg binding in the rhizosphere of Spartina cordgrass. Environmental Science & Technology. 43: 7397-402. PMID 19848152 DOI: 10.1021/Es901076Q |
0.302 |
|
| 2009 |
Ratchford JB, Goldthorpe IA, Sun Y, McIntyre PC, Pianetta PA, Chidsey CE. Gold removal from germanium nanowires. Langmuir : the Acs Journal of Surfaces and Colloids. 25: 9473-9. PMID 19419180 DOI: 10.1021/La900725B |
0.466 |
|
| 2009 |
Clay WA, Liu Z, Yang W, Fabbri JD, Dahl JE, Carlson RM, Sun Y, Schreiner PR, Fokin AA, Tkachenko BA, Fokina NA, Pianetta PA, Melosh N, Shen ZX. Origin of the monochromatic photoemission peak in diamondoid monolayers. Nano Letters. 9: 57-61. PMID 18975993 DOI: 10.1021/Nl802310K |
0.589 |
|
| 2009 |
Meirer F, Streli C, Wobrauschek P, Pepponi G, Giubertoni D, Pianetta P. F-39 Invited —TXRF-XANES and GI-XAS: X-ray Absorption Spectroscopy in Trace Analysis Powder Diffraction. 24: 167-167. DOI: 10.1154/1.3175944 |
0.315 |
|
| 2009 |
Maldonado JR, Sun Y, Tsai R, Pease F, Pianetta P. Apparatus to measure electron reflection Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 27: 2644-2647. DOI: 10.1116/1.3242695 |
0.437 |
|
| 2009 |
Goel N, Gilmer DC, Park H, Diaz V, Sun Y, Price J, Park C, Pianetta P, Kirsch PD, Jammy R. Erase and retention improvements in charge trap flash through engineered charge storage layer Ieee Electron Device Letters. 30: 216-218. DOI: 10.1109/Led.2009.2012397 |
0.431 |
|
| 2009 |
Bersani M, Pepponi G, Giubertoni D, Gennaro S, Sahiner MA, Kelty SP, Kah M, Kirkby KJ, Doherty R, Foad MA, Meirer F, Streli C, Woicik JC, Pianetta P. Characterization of junction activation and deactivation using non-equilibrium annealing: Solid phase epitaxy, spike annealing, laser annealing instructions for Extended Abstracts of the 9th International Workshop On Junction Technology, Iwjt 2009. 64-68. DOI: 10.1109/IWJT.2009.5166221 |
0.448 |
|
| 2009 |
Kuzum D, Krishnamohan T, Nainani A, Sun Y, Pianetta PA, Wong HSP, Saraswat KC. Experimental demonstration of high mobility Ge NMOS Technical Digest - International Electron Devices Meeting, Iedm. 19.1.1-19.1.4. DOI: 10.1109/IEDM.2009.5424322 |
0.325 |
|
| 2009 |
Kobayashi M, Thareja G, Ishibashi M, Sun Y, Griffin P, McVittie J, Pianetta P, Saraswat K, Nishi Y. Radical oxidation of germanium for interface gate dielectric GeO 2 formation in metal-insulator-semiconductor gate stack Journal of Applied Physics. 106. DOI: 10.1063/1.3259407 |
0.471 |
|
| 2009 |
Sun Y, Kirby RE, Maruyama T, Mulhollan GA, Bierman JC, Pianetta P. The surface activation layer of GaAs negative electron affinity photocathode activated by Cs, Li, and NF3 Applied Physics Letters. 95. DOI: 10.1063/1.3257730 |
0.473 |
|
| 2009 |
Toyoda S, Takahashi H, Kumigashira H, Oshima M, Lee DI, Sun S, Liu Z, Sun Y, Pianetta PA, Oshiyama I, Tai K, Fukuda S. Study on mechanism of crystallization in HfO2 films on Si substrates by in-depth profile analysis using photoemission spectroscopy Journal of Applied Physics. 106. DOI: 10.1063/1.3212979 |
0.693 |
|
| 2009 |
Oshima Y, Shandalov M, Sun Y, Pianetta P, McIntyre PC. Hafnium oxide/germanium oxynitride gate stacks on germanium: Capacitance scaling and interface state density Applied Physics Letters. 94. DOI: 10.1063/1.3116624 |
0.497 |
|
| 2009 |
Maldonado JR, Liu Z, Dowell DH, Kirby RE, Sun Y, Pianetta P, Pease F. Electron sources utilizing thin CsBr coatings Microelectronic Engineering. 86: 529-531. DOI: 10.1016/J.Mee.2008.11.063 |
0.508 |
|
| 2008 |
LaRue JL, White JD, Nahler NH, Liu Z, Sun Y, Pianetta PA, Auerbach DJ, Wodtke AM. The work function of submonolayer cesium-covered gold: a photoelectron spectroscopy study. The Journal of Chemical Physics. 129: 024709. PMID 18624554 DOI: 10.1063/1.2953712 |
0.475 |
|
| 2008 |
Bibee M, Mehta A, Brennan S, Pianetta P. S63 X-ray Studies of Strained Silicon on Insulator Powder Diffraction. 23: 188-188. DOI: 10.1154/1.2951831 |
0.323 |
|
| 2008 |
Oshima Y, Sun Y, Kuzum D, Sugawara T, Saraswat KC, Pianetta P, McIntyre PC. Chemical bonding, interfaces, and defects in hafnium oxidegermanium oxynitride gate stacks on Ge(100) Journal of the Electrochemical Society. 155: G304-G309. DOI: 10.1149/1.2995832 |
0.474 |
|
| 2008 |
Kuzum D, Krishnamohan T, Pethe A, Oshima Y, Sun Y, McVittie J, Pianetta PA, McIntyre PC, Saraswat KC. Ge interface passivation techniques and their thermal stability Ecs Transactions. 16: 1025-1029. DOI: 10.1149/1.2986865 |
0.329 |
|
| 2008 |
Maldonado JR, Sun Y, Liu Z, Liu X, Tanimoto S, Pianetta P, Pease F. Evaluation of electron energy spread in CsBr based photocathodes Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 26: 2085-2090. DOI: 10.1116/1.2976572 |
0.512 |
|
| 2008 |
Sun Y, Liu Z, Sun S, Pianetta P. The effectiveness of HCl and HF cleaning of Si0.85Ge 0.15 surface Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 26: 1248-1250. DOI: 10.1116/1.2966428 |
0.669 |
|
| 2008 |
Kuzum D, Krishnamohan T, Pethe AJ, Okyay AK, Oshima Y, Sun Y, McVittie JP, Pianetta PA, McIntyre PC, Saraswat KC. Ge-interface engineering with ozone oxidation for low interface-state density Ieee Electron Device Letters. 29: 328-330. DOI: 10.1109/Led.2008.918272 |
0.479 |
|
| 2008 |
Maldonado JR, Liu Z, Dowell DH, Kirby RE, Sun Y, Pianetta P, Pease F. Robust CsBr/Cu photocathodes for the linac coherent light source Physical Review Special Topics - Accelerators and Beams. 11. DOI: 10.1103/Physrevstab.11.060702 |
0.504 |
|
| 2008 |
Giubertoni D, Pepponi G, Gennaro S, Bersani M, Sahiner MA, Kelty SP, Doherty R, Foad MA, Kah M, Kirkby KJ, Woicik JC, Pianetta P. Correlation of local structure and electrical activation in arsenic ultrashallow junctions in silicon Journal of Applied Physics. 104. DOI: 10.1063/1.3026706 |
0.569 |
|
| 2008 |
Sun Y, Pianetta P, Chen PT, Kobayashi M, Nishi Y, Goel N, Garner M, Tsai W. Arsenic-dominated chemistry in the acid cleaning of InGaAs and InAlAs surfaces Applied Physics Letters. 93. DOI: 10.1063/1.3025852 |
0.497 |
|
| 2008 |
Kobayashi M, Chen PT, Sun Y, Goel N, Majhi P, Garner M, Tsai W, Pianetta P, Nishi Y. Synchrotron radiation photoemission spectroscopic study of band offsets and interface self-cleaning by atomic layer deposited HfO2 on In 0.53Ga0.47 As and In0.52Al0.48 As Applied Physics Letters. 93. DOI: 10.1063/1.3020298 |
0.452 |
|
| 2008 |
Liu Z, Sun Y, Peterson S, Pianetta P. Photoemission study of Cs-NF3 activated GaAs(100) negative electron affinity photocathodes Applied Physics Letters. 92. DOI: 10.1063/1.2945276 |
0.532 |
|
| 2008 |
Chen PT, Sun Y, Kim E, McIntyre PC, Tsai W, Garner M, Pianetta P, Nishi Y, Chui CO. HfO2 gate dielectric on (NH4)2S passivated (100) GaAs grown by atomic layer deposition Journal of Applied Physics. 103. DOI: 10.1063/1.2838471 |
0.508 |
|
| 2007 |
Ha JH, Alshareef H, Chambers J, Sun Y, Pianetta P, McIntyre PC, Colombo L. Oxygen transfer from metal gate to high-k gate dielectric stack: Interface structure & property changes Ecs Transactions. 11: 213-218. DOI: 10.1149/1.2779562 |
0.347 |
|
| 2007 |
Maldonado JR, Liu Z, Sun Y, Schuetter S, Pianetta P, Pease RFW. CsBrGaN heterojunction photoelectron source Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 25: 2266-2270. DOI: 10.1116/1.2779042 |
0.516 |
|
| 2007 |
Sun Y, Liu Z, Pianetta P. Surface dipole formation and lowering of the work function by Cs adsorption on InP(100) surface Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 25: 1351-1356. DOI: 10.1116/1.2753845 |
0.546 |
|
| 2007 |
Kuzum D, Pethe AJ, Krishnamohan T, Oshima Y, Sun Y, McVittie JP, Pianetta PA, McIntyre PC, Saraswat KC. Interface-engineered Ge (100) and (111), N- and P-FETs with high mobility Technical Digest - International Electron Devices Meeting, Iedm. 723-726. DOI: 10.1109/IEDM.2007.4419048 |
0.315 |
|
| 2007 |
Lee DI, Sun Y, Liu Z, Sun S, Pianetta P. Angular dependence of the photoelectron energy distribution of InP(100) and GaAs(100) negative electron affinity photocathodes Applied Physics Letters. 91. DOI: 10.1063/1.2805775 |
0.673 |
|
| 2007 |
Lee DI, Sun Y, Liu Z, Sun S, Peterson S, Pianetta P. The distribution of oxide species in the CsO activation layer on InP(100) negative electron affinity photocathodes Journal of Applied Physics. 102. DOI: 10.1063/1.2786885 |
0.688 |
|
| 2007 |
Sun Y, Liu Z, Pianetta P, Lee DI. Formation of cesium peroxide and cesium superoxide on InP photocathode activated by cesium and oxygen Journal of Applied Physics. 102. DOI: 10.1063/1.2786882 |
0.644 |
|
| 2007 |
Goel N, Tsai W, Garner CM, Sun Y, Pianetta P, Warusawithana M, Schlom DG, Wen H, Gaspe C, Keay JC, Santos MB, Goncharova LV, Garfunkel E, Gustafsson T. Band offsets between amorphous LaAl O3 and In0.53 Ga0.47 As Applied Physics Letters. 91. DOI: 10.1063/1.2783264 |
0.482 |
|
| 2007 |
Liu Z, Sun Y, Pianetta P, Maldonado JR, Pease RFW, Schuetter S. High current density GaN/CsBr heterojunction photocathode with improved photoyield Applied Physics Letters. 90. DOI: 10.1063/1.2746959 |
0.493 |
|
| 2007 |
Witte DJ, Crnogorac F, Pickard DS, Mehta A, Liu Z, Rajendran B, Pianetta P, Pease RFW. Lamellar crystallization of silicon for 3-dimensional integration Microelectronic Engineering. 84: 1186-1189. DOI: 10.1016/J.Mee.2007.01.249 |
0.392 |
|
| 2007 |
Liu Z, Mehta A, Tamura N, Pickard D, Rong B, Zhou T, Pianetta P. Influence of Taoism on the invention of the purple pigment used on the Qin terracotta warriors Journal of Archaeological Science. 34: 1878-1883. DOI: 10.1016/J.Jas.2007.01.005 |
0.342 |
|
| 2006 |
Ignatyev K, Huwig K, Harvey R, Ishii H, Bradley J, Luening K, Brennan S, Pianetta P. XRF microCT study of space objects at SSRL Progress in Biomedical Optics and Imaging - Proceedings of Spie. 6318. DOI: 10.1117/12.681440 |
0.317 |
|
| 2006 |
Maldonado JR, Liu Z, Sun Y, Pianetta PA, Pease FW. Photoelectron emission studies in CsBr at 257 nm Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 24: 2886-2891. DOI: 10.1116/1.2363410 |
0.537 |
|
| 2006 |
Sun S, Sun Y, Liu Z, Lee DI, Pianetta P. Roles of oxygen and water vapor in the oxidation of halogen terminated Ge(111) surfaces Applied Physics Letters. 89. DOI: 10.1063/1.2403908 |
0.697 |
|
| 2006 |
Seo KI, Lee DI, Pianetta P, Kim H, Saraswat KC, McIntyre PC. Chemical states and electrical properties of a high- k metal oxide/silicon interface with oxygen-gettering titanium-metal-overlayer Applied Physics Letters. 89. DOI: 10.1063/1.2358834 |
0.519 |
|
| 2006 |
Liu Z, Maldonado J, Sun Y, Pianetta P, Pease RFW. CsBr photocathode at 257 nm: A rugged high current density electron source Applied Physics Letters. 89. DOI: 10.1063/1.2354029 |
0.529 |
|
| 2006 |
Sun S, Sun Y, Liu Z, Lee DI, Peterson S, Pianetta P. Surface termination and roughness of Ge(100) cleaned by HF and HCl solutions Applied Physics Letters. 88: 1-3. DOI: 10.1063/1.2162699 |
0.717 |
|
| 2005 |
Singh A, Luening K, Brennan S, Homma T, Kubo N, Pianetta P. Nucleation and growth of copper nanoparticles on silicon surfaces Physica Scripta T. 714-716. DOI: 10.1238/Physica.Topical.115A00714 |
0.57 |
|
| 2005 |
Woicik JC, Aguirre-Tostada FS, Herrera-Gomez A, Droopad R, Yu Z, Schlom D, Karapetrova E, Zschack P, Pianetta P. X-ray absorption fine-structure determination of interfacial polarization in SrTiO3 thin films grown on Si(001) Physica Scripta T. 620-622. DOI: 10.1238/Physica.Topical.115A00620 |
0.59 |
|
| 2005 |
Brennan S, Luening K, Pianetta P, Bradley J, Graham G, Westphal A, Snead C, Dominguez G. Near-edge absorption spectroscopy of interplanetary dust particles Physica Scripta T. 261-263. DOI: 10.1238/Physica.Topical.115A00261 |
0.323 |
|
| 2005 |
Liu Z, Sun Y, Pianetta P, Pease RFW. Narrow cone emission from negative electron affinity photocathodes Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 23: 2758-2762. DOI: 10.1116/1.2101726 |
0.507 |
|
| 2005 |
Adhikari H, McIntyre PC, Sun S, Pianetta P, Chidsey CED. Photoemission studies of passivation of germanium nanowires Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2158027 |
0.557 |
|
| 2005 |
Toyoda S, Okabayashi J, Takahashi H, Oshima M, Lee DI, Sun S, Pianetta PA, Ando T, Fukuda S. Nitrogen doping and thermal stability in HfSiO xN y studied by photoemission and x-ray absorption spectroscopy Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2126112 |
0.641 |
|
| 2005 |
Seo KI, McIntyre PC, Sun S, Lee DI, Pianetta P, Saraswat KC. Chemical states and electronic structure of a HfO 2/Ge(001) interface Applied Physics Letters. 87. DOI: 10.1063/1.2006211 |
0.643 |
|
| 2005 |
Lindau I, Pianetta P. William Edward Spicer Physics Today. 58: 86-87. DOI: 10.1063/1.1995762 |
0.386 |
|
| 2005 |
Sun Y, Liu Z, MacHuca F, Pianetta P, Spicer WE. Optimized cleaning method for producing device quality InP(100) surfaces Journal of Applied Physics. 97. DOI: 10.1063/1.1935745 |
0.571 |
|
| 2005 |
Chui CO, Lee DI, Singh AA, Pianetta PA, Saraswat KC. Zirconia-germanium interface photoemission spectroscopy using synchrotron radiation Journal of Applied Physics. 97. DOI: 10.1063/1.1922090 |
0.543 |
|
| 2005 |
Puthenkovilakam R, Lin YS, Choi J, Lu J, Blom HO, Pianetta P, Devine D, Sendler M, Chang JP. Effects of post-deposition annealing on the material characteristics of ultrathin HfO2 films on silicon Journal of Applied Physics. 97. DOI: 10.1063/1.1831543 |
0.356 |
|
| 2004 |
Caputo D, Bacciaglia P, Carpanese C, Polignano ML, Lazzeri P, Bersani M, Vanzetti L, Pianetta P, Moro L. Quantitative evaluation of iron at the silicon surface after wet cleaning treatments Journal of the Electrochemical Society. 151: G289-G296. DOI: 10.1149/1.1668993 |
0.328 |
|
| 2004 |
Machuca F, Liu Z, Maldonado JR, Coyle ST, Pianetta P, Pease RFW. Negative electron affinity group III-nitride photocathode demonstrated as a high performance electron source Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 22: 3565-3569. DOI: 10.1116/1.1813453 |
0.423 |
|
| 2004 |
Aguirre-Tostado FS, Herrera-Gómez A, Woicik JC, Droopad R, Yu Z, Schlom DG, Karapetrova J, Zschack P, Pianetta P. Displacive phase transition in SrTiO 3 thin films grown on Si(001) Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 22: 1356-1360. DOI: 10.1116/1.1765657 |
0.555 |
|
| 2004 |
Aguirre-Tostado FS, Herrera-Gómez A, Woicik JC, Droopad R, Yu Z, Schlom DG, Zschack P, Karapetrova E, Pianetta P, Hellberg CS. Elastic anomaly for SrTiO3 thin films grown on Si(001) Physical Review B - Condensed Matter and Materials Physics. 70: 201403-1-201403-4. DOI: 10.1103/Physrevb.70.201403 |
0.578 |
|
| 2004 |
Liu Z, Machuca F, Pianetta P, Spicer WE, Pease RFW. Electron scattering study within the depletion region of the GaN(0001) and the GaAs(100) surface Applied Physics Letters. 85: 1541-1543. DOI: 10.1063/1.1785865 |
0.461 |
|
| 2004 |
Morse KA, Pianetta P. Room temperature photo-oxidation of NH 4F-prepared H-Si(111)(1×1) and H x-Si(100) Journal of Applied Physics. 96: 6851-6858. DOI: 10.1063/1.1785835 |
0.797 |
|
| 2004 |
Pepponi G, Streli C, Wobrauschek P, Zoeger N, Luening K, Pianetta P, Giubertoni D, Barozzi M, Bersani M. Nondestructive dose determination and depth profiling of arsenic ultrashallow junctions with total reflection X-ray fluorescence analysis compared to dynamic secondary ion mass spectrometry Spectrochimica Acta - Part B Atomic Spectroscopy. 59: 1243-1249. DOI: 10.1016/J.Sab.2004.04.014 |
0.341 |
|
| 2003 |
Schmidt D, Pianetta P. Fabrication and Characterization of Ultra-Small Polycrystalline Silicon Islands for Advanced Multi-Level Silicon-On-Lnsulator Applications Solid State Phenomena. 93: 441-446. DOI: 10.4028/Www.Scientific.Net/Ssp.93.441 |
0.574 |
|
| 2003 |
Liu Z, Sun Y, Machuca F, Pianetta P, Spicer WE, Pease RFW. Optimization and characterization of III-V surface cleaning Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 21: 1953-1958. DOI: 10.1116/1.1593644 |
0.595 |
|
| 2003 |
Machuca F, Liu Z, Sun Y, Pianetta P, Spicer WE, Pease RFW. Oxygen species in Cs/O activated gallium nitride (GaN) negative electron affinity photocathodes Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 21: 1863-1869. DOI: 10.1116/1.1589512 |
0.55 |
|
| 2003 |
Sun Y, Liu Z, Machuca F, Pianetta P, Spicer WE. Preparation of clean InP(100) surfaces studied by synchrotron radiation photoemission Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 21: 219-225. DOI: 10.1116/1.1532738 |
0.595 |
|
| 2003 |
Liu Z, Sun Y, Machuca F, Pianetta P, Spicer WE, Pease RFW. Preparation of clean GaAs(100) studied by synchrotron radiation photoemission Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 21: 212-218. DOI: 10.1116/1.1532737 |
0.585 |
|
| 2003 |
Lin YS, Puthenkovilakam R, Chang JP, Bouldin C, Levin I, Nguyen NV, Ehrstein J, Sun Y, Pianetta P, Conard T, Vandervorst W, Ventura V, Selbrede S. Interfacial properties of ZrO2 on silicon Journal of Applied Physics. 93: 5945-5952. DOI: 10.1063/1.1563844 |
0.386 |
|
| 2003 |
Singh A, Baur K, Brennan S, Homma T, Kubo N, Pianetta P. Detection and characterization of trace element contamination on silicon wafers X‐Ray and Inner‐Shell Processes. 652: 472-480. DOI: 10.1063/1.1536408 |
0.499 |
|
| 2003 |
Sikes HD, Sun Y, Dudek SP, Chidsey CED, Pianetta P. Photoelectron spectroscopy to probe the mechanism of electron transfer through oligo(phenylene vinylene) bridges Journal of Physical Chemistry B. 107: 1170-1173. DOI: 10.1021/Jp026734A |
0.465 |
|
| 2003 |
Streli C, Pepponi G, Wobrauschek P, Zöger N, Pianetta P, Baur K, Pahlke S, Fabry L, Mantler C, Kanngießer B, Malzer W. Analysis of low Z elements on Si wafer surfaces with synchrotron radiation induced total reflection X-ray fluorescence at SSRL, Beamline 3-3: Comparison of droplets with spin coated wafers Spectrochimica Acta - Part B Atomic Spectroscopy. 58: 2105-2112. DOI: 10.1016/S0584-8547(03)00218-0 |
0.379 |
|
| 2003 |
Schmidt DJ, Pianetta PA. Color filtering metallization for optoelectronic 100nm CMOS circuits Technical Digest - International Electron Devices Meeting. 389-392. |
0.462 |
|
| 2002 |
Baur K, Brennan S, Pianetta P, Opila R. Looking at trace impurities on silicon wafers with synchrotron radiation. Analytical Chemistry. 74: 608A-616A. PMID 12498179 DOI: 10.1021/Ac022159V |
0.308 |
|
| 2002 |
Morse KA, Pianetta P. Investigation of light initiated oxidation of hydrogen passivated silicon surfaces: Hx-Si(100) and H-Si(111)(1×1) Materials Research Society Symposium - Proceedings. 716: 279-284. DOI: 10.1557/Proc-716-B6.8 |
0.796 |
|
| 2002 |
Singh A, Baur K, Brennan S, Homma T, Kubo N, Pianetta P. X-ray absorption spectroscopy on copper trace impurities on silicon wafers Materials Research Society Symposium - Proceedings. 716: 23-28. DOI: 10.1557/Proc-716-B1.4 |
0.569 |
|
| 2002 |
Schmidt D, Shi F, Pianetta P. A study of fabrication and characterization of ultra-small polycrystalline silicon islands for advanced display and microsensor applications Materials Research Society Symposium - Proceedings. 715: 707-712. DOI: 10.1557/Proc-715-A3.2 |
0.57 |
|
| 2002 |
Machuca F, Liu Z, Sun Y, Pianetta P, Spicer WE, Pease RFW. Role of oxygen in semiconductor negative electron affinity photocathodes Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 20: 2721-2725. DOI: 10.1116/1.1521742 |
0.55 |
|
| 2002 |
Machuca F, Liu Z, Sun Y, Pianetta P, Spicer WE, Pease RFW. Simple method for cleaning gallium nitride (0001) Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 20: 1784-1786. DOI: 10.1116/1.1503782 |
0.575 |
|
| 2002 |
Nelson EJ, Woicik JC, Pianetta P, Vartanyants IA, Cooper JW. Quadrupole effects in core and valence photoelectron emission from crystalline germanium measured via a spatially modulated x-ray interference field Physical Review B - Condensed Matter and Materials Physics. 65: 1652191-1652199. DOI: 10.1103/Physrevb.65.165219 |
0.678 |
|
| 2002 |
Ramanathan S, McIntyre PC, Luning J, Pianetta P, Muller DA. Structural studies of ultrathin zirconia dielectrics Philosophical Magazine Letters. 82: 519-528. DOI: 10.1080/09500830210157108 |
0.399 |
|
| 2002 |
Niederhauser TL, Lua YY, Sun Y, Jiang G, Strossman GS, Pianetta P, Linford MR. Formation of (functionalized) monolayers and simultaneous surface patterning by scribing silicon in the presence of alkyl halides Chemistry of Materials. 14: 27-29. DOI: 10.1021/Cm0108536 |
0.491 |
|
| 2001 |
Wang JB, Balazs M, Pianetta P, Baur K, Brennan S. Investigation of trace metals analyses of dry residue on silicon wafer surfaces by TXRF and ICP-MS Solid State Phenomena. 76: 75-80. DOI: 10.4028/Www.Scientific.Net/Ssp.76-77.75 |
0.303 |
|
| 2001 |
Lim SW, Mo RT, Pianetta PA, Chidsey CED. Effect of silicon surface termination on copper deposition in deionized water Journal of the Electrochemical Society. 148: C16-C20. DOI: 10.1149/1.1344534 |
0.387 |
|
| 2001 |
Kasnavi R, Sun Y, Mount G, Pianetta P, Griffin PB, Plummer JD. Characterization of profiling techniques for ultralow energy arsenic implants Electrochemical and Solid-State Letters. 4: G1-G3. DOI: 10.1149/1.1344284 |
0.304 |
|
| 2001 |
Kelly MA, Shek ML, Pianetta P, Gür TM, Beasley MR. In situ x-ray photoelectron spectroscopy for thin film synthesis monitoring Journal of Vacuum Science and Technology, Part a: Vacuum, Surfaces and Films. 19: 2127-2133. DOI: 10.1116/1.1374618 |
0.385 |
|
| 2001 |
Woicik JC, Nelson EJ, Heskett D, Warner J, Berman LE, Karlin BA, Vartanyants IA, Hasan MZ, Kendelewicz T, Shen ZX, Pianetta P. X-ray standing-wave investigations of valence electronic structure Physical Review B - Condensed Matter and Materials Physics. 64: 1251151-12511515. DOI: 10.1103/Physrevb.64.125115 |
0.658 |
|
| 2001 |
Woicik JC, Nelson EJ, Kendelewicz T, Pianetta P, Jain M, Kronik L, Chelikowsky JR. Partial density of occupied valence states by x-ray standing waves and high-resolution photoelectron spectroscopy Physical Review B - Condensed Matter and Materials Physics. 63: 414031-414034. DOI: 10.1103/Physrevb.63.041403 |
0.681 |
|
| 2001 |
Herrera-Gómez A, Aguirre-Tostado FS, Sun Y, Pianetta P, Yu Z, Marshall D, Droopad R, Spicer WE. Photoemission from the Sr/Si(001) interface Journal of Applied Physics. 90: 6070-6072. DOI: 10.1063/1.1415758 |
0.401 |
|
| 2001 |
Baur K, Brennan S, Burrow B, Werho D, Pianetta P. Laboratory and synchrotron radiation total-reflection X-ray fluorescence: New perspectives in detection limits and data analysis Spectrochimica Acta - Part B Atomic Spectroscopy. 56: 2049-2056. DOI: 10.1016/S0584-8547(01)00324-X |
0.326 |
|
| 2001 |
Streli C, Wobrauschek P, Kregsamer P, Pepponi G, Pianetta P, Pahlke S, Fabry L. Synchrotron radiation induced total reflection X-ray fluorescence of low Z elements on Si wafer surfaces at SSRL - Comparison of excitation geometries and conditions Spectrochimica Acta - Part B Atomic Spectroscopy. 56: 2085-2094. DOI: 10.1016/S0584-8547(01)00322-6 |
0.41 |
|
| 2001 |
Baur K, Brennan S, Werho D, Moro L, Pianetta P. Recent advances and perspectives in synchrotron radiation TXRF Nuclear Instruments and Methods in Physics Research, Section a: Accelerators, Spectrometers, Detectors and Associated Equipment. 467: 1198-1201. DOI: 10.1016/S0168-9002(01)00569-1 |
0.316 |
|
| 2000 |
Woicik JC, Nelson EJ, Pianetta P. Direct measurement of valence-charge asymmetry by x-ray standing waves. Physical Review Letters. 84: 773-6. PMID 11017369 DOI: 10.1103/Physrevlett.84.773 |
0.667 |
|
| 2000 |
Machuca F, Sun Y, Liu Z, Ioakeimidi K, Pianetta P, Pease RFW. Prospect for high brightness III-nitride electron emitter Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 18: 3042-3046. DOI: 10.1116/1.1321270 |
0.529 |
|
| 2000 |
Holloway BC, Kraft O, Shuh DK, Nix WD, Kelly M, Pianetta P, Hagström S. Role of delocalized nitrogen in determining the local atomic arrangement and mechanical properties of amorphous carbon nitride thin films Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 18: 2964-2971. DOI: 10.1116/1.1308592 |
0.309 |
|
| 2000 |
Kasnavi R, Sun Y, Mo R, Pianetta P, Griffin PB, Plummer JD. Characterization of arsenic dose loss at the Si/SiO2 interface Journal of Applied Physics. 87: 2255-2260. DOI: 10.1063/1.372169 |
0.49 |
|
| 2000 |
Baur K, Kerner J, Brennan S, Singh A, Pianetta P. Aluminum impurities in silicon: Investigation of x-ray Raman scattering in total reflection x-ray fluorescence spectroscopy Journal of Applied Physics. 88: 4642-4647. DOI: 10.1063/1.1312848 |
0.552 |
|
| 2000 |
Pianetta P, Baur K, Singh A, Brennan S, Kerner J, Werho D, Wang J. Application of synchrotron radiation to TXRF analysis of metal contamination on silicon wafer surfaces Thin Solid Films. 373: 222-226. DOI: 10.1016/S0040-6090(00)01139-1 |
0.539 |
|
| 2000 |
Herrera-Gómez A, Pianetta P, Marshall D, Nelson E, Spicer WE. Geometrical structure of the 1/2-ML (2×1) and 1/3-ML (2×3) Ba/Si(001) interfaces Physical Review B - Condensed Matter and Materials Physics. 61: 12988-12991. |
0.484 |
|
| 1999 |
Nelson E, Woicik J, Pianetta P. Direct measurement of valence charge asymmetry in GaAs using X-ray standing waves. Journal of Synchrotron Radiation. 6: 341-3. PMID 15263301 DOI: 10.1107/S0909049598016537 |
0.619 |
|
| 1999 |
Terry J, Linford MR, Wigren C, Cao R, Pianetta P, Chidsey CED. Alkyl-terminated Si(111) surfaces: A high-resolution, core level photoelectron spectroscopy study Journal of Applied Physics. 85: 213-221. DOI: 10.1063/1.369473 |
0.612 |
|
| 1999 |
Jiménez I, Tong WM, Shuh DK, Holloway BC, Kelly MA, Pianetta P, Terminello LJ, Himpsel FJ. Bonding modifications in carbon nitride films induced by thermal annealing: An x-ray absorption near edge study Applied Physics Letters. 74: 2620-2622. DOI: 10.1063/1.123916 |
0.327 |
|
| 1999 |
Holloway BC, Kraft O, Shuh DK, Kelly MA, Nix WD, Pianetta P, Hagström S. Interpretation of X-ray photoelectron spectra of elastic amorphous carbon nitride thin films Applied Physics Letters. 74: 3290-3292. DOI: 10.1063/1.123362 |
0.31 |
|
| 1999 |
Streli C, Kregsamer P, Wobrauschek P, Gatterbauer H, Pianetta P, Pahlke S, Fabry L, Palmetshofer L, Schmeling M. Low Z total reflection X-ray fluorescence analysis - challenges and answers Spectrochimica Acta, Part B: Atomic Spectroscopy. 54: 1433-1441. DOI: 10.1016/S0584-8547(99)00069-5 |
0.37 |
|
| 1999 |
Spicer WE, Herrera-Gômez A, Pianetta P. Can studies of the II-VIs profit from the use of synchrotron radiation and the DOE financial support thereof? Journal of Electronic Materials. 28: 804-809. DOI: 10.1007/S11664-999-0074-2 |
0.339 |
|
| 1999 |
Kregsamer P, Streli C, Wobrauschek P, Gatterbauer H, Pianetta P, Palmetshofer L, Brehm LL. Synchrotron Radiation-excited Glancing Incidence XRF for Depth Profile and Thin-Film Analysis of Light Elements X-Ray Spectrometry. 28: 292-296. DOI: 10.1002/(Sici)1097-4539(199907/08)28:4<292::Aid-Xrs354>3.0.Co;2-A |
0.346 |
|
| 1998 |
Brennan S, Pianetta P, Ghosh S, Takaura N, Wiemer C, Fischer-Colbrie A, Laderman S, Shimazaki A, Waldhauer A, Zaitz MA. Update on synchrotron radiation TXRF: New results Materials Research Society Symposium - Proceedings. 524: 245-249. DOI: 10.1557/Proc-524-245 |
0.331 |
|
| 1997 |
Doniach S, Hodgson K, Lindau I, Pianetta P, Winick H. Early work with synchrotron radiation at stanford. Journal of Synchrotron Radiation. 4: 380-95. PMID 16699252 DOI: 10.1107/S0909049597012235 |
0.488 |
|
| 1997 |
Terry J, Linford MR, Wigren C, Cao R, Pianetta P, Chidsey CED. Determination of the bonding of alkyl monolayers to the Si(111) surface using chemical-shift, scanned-energy photoelectron diffraction Applied Physics Letters. 71: 1056-1058. DOI: 10.1063/1.119726 |
0.611 |
|
| 1997 |
Ma Q, Rosenberg RA, Kim C, Grepstad J, Pianetta P. Microscopic chemical state identification of a silicon-carbide fiber by soft x-ray photoabsorption spectroscopy Applied Physics Letters. 70: 2389-2391. DOI: 10.1063/1.118881 |
0.328 |
|
| 1997 |
Streli C, Wobrauschek P, Bauer V, Kregsamer P, Görgl R, Pianetta P, Ryon R, Pahlke S, Fabry L. Total reflection X-ray fluorescence analysis of light elements with synchrotron radiation and special X-ray tubes Spectrochimica Acta - Part B Atomic Spectroscopy. 52: 861-872. DOI: 10.1016/S0584-8547(96)01663-1 |
0.39 |
|
| 1997 |
Terry J, Mo R, Wigren C, Cao R, Mount G, Pianetta P, Linford MR, Chidsey CED. Reactivity of the HSi (1 1 1) surface Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms. 133: 94-101. DOI: 10.1016/S0168-583X(97)00467-9 |
0.608 |
|
| 1997 |
Nelson EJ, Kendelewicz T, Liu P, Pianetta P. New surface phases for potassium adatoms on cleaved Si(111) Surface Science. 380: 365-376. DOI: 10.1016/S0039-6028(97)00024-1 |
0.582 |
|
| 1996 |
Filipponi A, Di Cicco A, Pianetta P, Kendelewicz T. Evidence for Physical Review. B, Condensed Matter. 53: 15571-15576. PMID 9983389 DOI: 10.1103/Physrevb.53.15571 |
0.366 |
|
| 1996 |
Woicik JC, Kendelewicz T, Yoshikawa SA, Miyano KE, Herman GS, Cowan PL, Pianetta P, Spicer WE. Surface-sensitive x-ray standing-wave study of Si(111) sqrt(3) x sqrt(3) -Ag. Physical Review. B, Condensed Matter. 53: 15425-15428. PMID 9983362 DOI: 10.1103/Physrevb.53.15425 |
0.583 |
|
| 1996 |
Holloway BC, Shuh DK, Kelly MA, Tong W, Carlisle JA, Jimenez I, Sutherland DGJ, Terminello LJ, Pianetta P, Hagstrom S. Synthesis and characterization of amorphous carbon nitride films Thin Solid Films. 290: 94-98. DOI: 10.1016/S0040-6090(96)09203-6 |
0.311 |
|
| 1996 |
Kendelewicz T, Liu P, Brown GE, Nelson EJ, Pianetta P. Photoemission study of Na and Cs adsorption on MgO(100)1 × 1 Surface Science. 352: 451-456. DOI: 10.1016/0039-6028(95)01329-6 |
0.557 |
|
| 1995 |
Laderman SS, Fischer-COLBRIE A, Shimazaki A, Miyazaki K, Brennan S, Takakura N, Pianetta P, Kortright JB. High-sensitivity total reflection X-ray fluorescence spectroscopy of silicon wafers using synchrotron radiation Analytical Sciences. 11: 515-518. DOI: 10.2116/Analsci.11.515 |
0.384 |
|
| 1995 |
Fox CA, Kelly MA, Hagstrom SB, Cao R, Vergara G, Pianetta P, Pan LS, Hsu WL. Photoelectron Emission from the Cesiated Diamond (110) Surface Mrs Proceedings. 416: 449. DOI: 10.1557/Proc-416-449 |
0.413 |
|
| 1995 |
Lu ZH, Tay SP, Cao R, Pianetta P. The effect of rapid thermal N2O nitridation on the oxide/Si(100) interface structure Applied Physics Letters. 67: 2836-2838. DOI: 10.1063/1.114801 |
0.364 |
|
| 1995 |
Pianetta P, Takaura N, Brennan S, Tompkins W, Laderman SS, Fischer-Colbrie A, Shimazaki A, Miyazaki K, Madden M, Wherry DC, Kortright JB. Total reflection x-ray fluorescence spectroscopy using synchrotron radiation for wafer surface trace impurity analysis (invited) Review of Scientific Instruments. 66: 1293-1297. DOI: 10.1063/1.1145957 |
0.388 |
|
| 1994 |
Herrera-Gómez A, Kendelewicz T, Woicik JC, Miyano KE, Pianetta P, Southworth S, Cowan PL, Karlin A, Spicer WE. Geometrical structure of the Bi/GaP (110) interface: An x-ray standing wave triangulation study of a nonideal system Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 12: 2473-2477. DOI: 10.1116/1.579196 |
0.572 |
|
| 1994 |
Green AM, Kim C, Spicer WE, Cao R, Pianetta P. CaF2 overlayers to preserve the ideal termination of Sb/GaAs(110) overlayers to preserve the ideal termination of Sb/GaAs(110) Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 12: 1158-1169. DOI: 10.1116/1.579184 |
0.368 |
|
| 1994 |
Terry J, Cao R, Wigren C, Pianetta P. Photoemission study of Au, Ge, and O2 deposition on NH4F etched Si(111) Journal of Vacuum Science and Technology. 12: 1869-1875. DOI: 10.1116/1.579020 |
0.611 |
|
| 1994 |
Brennan S, Tompkins W, Takaura N, Pianetta P, Laderman SS, Fischer-Colbrie A, Kortright JB, Madden MC, Wherry DC. Wide band-pass approaches to total-reflection X-ray fluorescence using synchrotron radiation Nuclear Inst. and Methods in Physics Research, A. 347: 417-421. DOI: 10.1016/0168-9002(94)91920-8 |
0.382 |
|
| 1994 |
Streli C, Wobrauschek P, Ladisich W, Rieder R, Aiginger H, Ryon RW, Pianetta P. Total reflection X-ray fluorescence analysis of light elements using synchrotron radiation Nuclear Instruments & Methods in Physics Research Section a-Accelerators Spectrometers Detectors and Associated Equipment. 345: 399-403. DOI: 10.1016/0168-9002(94)91019-7 |
0.311 |
|
| 1994 |
Yoshikawa SA, Nogami J, Quate CF, Pianetta P. Behavior of tellurium on silicon (100) Surface Science. 321. DOI: 10.1016/0039-6028(94)90172-4 |
0.394 |
|
| 1993 |
Woicik JC, Kendelewicz T, Herrera-Gomez A, Miyano KE, Cowan PL, Bouldin CE, Pianetta P, Spicer WE. In/Si(111)- sqrt 3 x sqrt 3 interface: An unrelaxed T4 geometry. Physical Review Letters. 71: 1204-1207. PMID 10055476 DOI: 10.1103/Physrevlett.71.1204 |
0.604 |
|
| 1993 |
Miyano KE, Woicik JC, Kendelewicz T, Spicer WE, Richter M, Pianetta P. Surface extended x-ray-absorption fine-structure study of the (1 monolayer Sb)/GaP(110) interface. Physical Review. B, Condensed Matter. 47: 6444-6449. PMID 10004610 DOI: 10.1103/Physrevb.47.6444 |
0.593 |
|
| 1993 |
Yango X, Cao R, Li J, Terry J, Wu J, Pianetta P. THE EPITAXIAL GROWTH OF Ge ON Si(100) USING Te AS A SURFACTANT Mrs Proceedings. 312: 243. DOI: 10.1557/Proc-312-243 |
0.577 |
|
| 1993 |
Madden MC, Wherry DC, Pianetta P, Brennan S. Synchrotron Radiation for Measurement of Contaminants on Silicon Surfaces Mrs Proceedings. 307. DOI: 10.1557/Proc-307-125 |
0.353 |
|
| 1993 |
Kim C, Cao R, Pianetta P. Fermi‐level variation on GaAs(110) surface with Sb overlayer studied with a photoelectron microscope Journal of Vacuum Science & Technology B. 11: 1575-1578. DOI: 10.1116/1.586972 |
0.387 |
|
| 1993 |
Kendelewicz T, Woicik JC, Miyano KE, Herrera‐Gomez A, Cowan PL, Pianetta P, Spicer WE. Structure of Sb monolayers on Ge(111)2×1: A combined study using core‐level photoemission, x‐ray standing waves, and surface extended x‐ray absorption fine structure Journal of Vacuum Science & Technology B. 11: 1449-1454. DOI: 10.1116/1.586958 |
0.597 |
|
| 1993 |
Cao R, Yang X, Pianetta P. Atomic and electronic structure of B/Si(100) Journal of Vacuum Science & Technology B. 11: 1455-1458. DOI: 10.1116/1.586911 |
0.441 |
|
| 1993 |
Wu J, Cao R, Yang X, Pianetta P, Lindau I. Photoemission study of diamond (100) surface Journal of Vacuum Science and Technology. 11: 1048-1051. DOI: 10.1116/1.578439 |
0.559 |
|
| 1993 |
Cao R, Yang X, Pianetta P. Characterization of the B/Si surface electronic structures Journal of Vacuum Science and Technology. 11: 1817-1822. DOI: 10.1116/1.578432 |
0.417 |
|
| 1993 |
Woicik JC, Kendelewicz T, Herrera-Gomez A, Andrews AB, Kim BS, Cowan PL, Miyano KE, Bouldin CE, Karlin BA, Herman GS, Erskine JL, Pianetta P, Spicer WE. Adatom location on the Si(111) 7×7 and Si(111) √3× √3-In surfaces by the x-ray standing wave and photoemission techniques Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 11: 2359-2363. DOI: 10.1116/1.578333 |
0.598 |
|
| 1993 |
Herrera-Gómez A, Kendelewicz T, Woicik JC, Miyano KE, Pianetta P, Southworth S, Cowan PL, Karlin BA, Spicer WE. Determination of the geometrical configuration of Bi on GaAs (110) by x-ray standing wave triangulation Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 11: 2354-2358. DOI: 10.1116/1.578332 |
0.548 |
|
| 1993 |
Kendelewicz T, Woicik JC, Herrera-Gomez A, Miyano KE, Cowan PL, Karlin BA, Pianetta P, Spicer WE. X-ray standing wave study of the Sb/GaAs(110) interface structure Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 11: 2351-2353. DOI: 10.1116/1.578331 |
0.55 |
|
| 1992 |
Woicik JC, Kendelewicz T, Miyano KE, Richter M, Bouldin CE, Pianetta P, Spicer WE. Extended x-ray-absorption fine-structure determination of bond-length conservation at the clean InP(110) surface. Physical Review. B, Condensed Matter. 46: 9869-9872. PMID 10002816 DOI: 10.1103/Physrevb.46.9869 |
0.594 |
|
| 1992 |
Borg A, King PL, Pianetta P, Lindau I, Mitzi DB, Kapitulnik A, Soldatov AV, Della Longa S, Bianconi A. Ca 3d unoccupied states in Bi2Sr2CaCu2O8 investigated by Ca L2,3 x-ray-absorption near-edge structure. Physical Review. B, Condensed Matter. 46: 8487-8495. PMID 10002613 DOI: 10.1103/Physrevb.46.8487 |
0.48 |
|
| 1992 |
Kendelewicz T, Woicik JC, Miyano KE, Herrera-Gomez A, Cowan PL, Karlin BA, Bouldin CE, Pianetta P, Spicer WE. X-ray standing-wave study of monolayers of Sb on GaAs(110). Physical Review. B, Condensed Matter. 46: 7276-7279. PMID 10002452 DOI: 10.1103/Physrevb.46.7276 |
0.582 |
|
| 1992 |
Miyano KE, Kendelewicz T, Woicik JC, Cowan PL, Bouldin CE, Karlin BA, Pianetta P, Spicer WE. Structural characterization of the (1 monolayer Sb)/GaP(110) interface using x-ray standing waves. Physical Review. B, Condensed Matter. 46: 6869-6874. PMID 10002389 DOI: 10.1103/Physrevb.46.6869 |
0.567 |
|
| 1992 |
Cao R, Yang X, Terry J, Pianetta P. Core-level shifts of the Ge(100)-(2 x 1) surface and their origins. Physical Review. B, Condensed Matter. 45: 13749-13752. PMID 10001476 |
0.549 |
|
| 1992 |
Kim C, King PL, Pianetta P. Fermi Level Inhomogeneities on GaAs(110) Surface Imaged with a Photoelectron Microscope Mrs Proceedings. 260: 587. DOI: 10.1557/Proc-260-587 |
0.329 |
|
| 1992 |
Terry J, Liu H, Cao R, Woicik JC, Pianetta P, Yang X, Wu J, Richter M, Maluf N, Pease F, Dillon A, Robinson M, George S. A Photoemission Study of Electrochemically Etched Light Emitting Silicon Mrs Proceedings. 259: 421. DOI: 10.1557/Proc-259-421 |
0.643 |
|
| 1992 |
Yang X, Cao R, Terry J, Pianetta P. Si(100) and Ge(100) core‐level shifts: A reevaluation Journal of Vacuum Science & Technology B. 10: 2013-2017. DOI: 10.1116/1.586177 |
0.602 |
|
| 1992 |
Kim C, King PL, Pianetta P. Fermi‐level inhomogeneities on the GaAs (110) surface imaged with a photoelectron microscope Journal of Vacuum Science & Technology B. 10: 1944-1948. DOI: 10.1116/1.586163 |
0.375 |
|
| 1992 |
Woicik JC, Kendelewicz T, Cowan PL, Richter M, Karlin BA, Bouldin CE, Miyano KE, Pianetta P, Spicer WE. Extended x-ray absorption fine structure and x-ray standing wave study of the clean lnP(110) surface relaxation Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 10: 2041-2045. DOI: 10.1116/1.578021 |
0.594 |
|
| 1992 |
Cao R, Yang X, Terry J, Pianetta P. Microscopic study of the surfactant‐assisted Si, Ge epitaxial growth Applied Physics Letters. 61: 2347-2349. DOI: 10.1063/1.108239 |
0.597 |
|
| 1992 |
Wu J, Shen ZX, Dessau DS, Cao R, Marshall DS, Pianetta P, Lindau I, Yang X, Terry J, King DM, Wells BO, Elloway D, Wendt HR, Brown CA, Hunziker H, et al. Electronic structure of single crystal C60 Physica C: Superconductivity and Its Applications. 197: 251-260. DOI: 10.1016/0921-4534(92)90007-Y |
0.633 |
|
| 1991 |
Woicik JC, Kendelewicz T, Miyano KE, Cowan PL, Bouldin CE, Karlin BA, Pianetta P, Spicer WE. Determination of the Sb/Si(111) interfacial structure by back-reflection x-ray standing waves and surface extended x-ray-absorption fine structure. Physical Review. B, Condensed Matter. 44: 3475-3478. PMID 9999972 DOI: 10.1103/Physrevb.44.3475 |
0.619 |
|
| 1991 |
Woicik JC, Kendelewicz T, Miyano KE, Bouldin CE, Meissner PL, Pianetta P, Spicer WE. Local bonding structure of Sb on Si(111) by surface extended x-ray-absorption fine structure and photoemission. Physical Review. B, Condensed Matter. 43: 4331-4339. PMID 9997786 DOI: 10.1103/Physrevb.43.4331 |
0.623 |
|
| 1991 |
Woicik JC, Bouldin CE, Bell MI, Cross JO, Tweet DJ, Swanson BD, Zhang TM, Sorensen LB, King CA, Hoyt JL, Pianetta P, Gibbons JF. Conservation of bond lengths in strained Ge-Si layers. Physical Review. B, Condensed Matter. 43: 2419-2422. PMID 9997524 DOI: 10.1103/Physrevb.43.2419 |
0.582 |
|
| 1991 |
Barbee TW, Weed JW, Hoover RB, Allen MJ, Lindblom JF, O'Neal RH, Kankelborg CC, DeForest CE, Paris ES, Walker ABC, Willis TD, Gluskin ES, Pianetta PA, Baker PC. Multi-Spectral Solar Telescope Array II: soft x-ray EUV reflectivity of the multilayer mirrors Optical Engineering. 30: 1067-1075. DOI: 10.1117/12.55917 |
0.325 |
|
| 1991 |
Kendelewicz T, Woicik JC, Miyano KE, Cowan PL, Karlin BA, Bouldin CE, Pianetta P, Spicer WE. Synchrotron x-ray standing-wave study of Sb on GaAs(110) and InP(110) Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 9: 2290-2293. DOI: 10.1116/1.585735 |
0.575 |
|
| 1991 |
Richter M, Woicik JC, Pianetta P, Miyano KE, Bouldin CE, Spicer WE, Lindau I, Kendelewicz T. Surface extended x-ray adsorption fine structure studies of the Si(001) 2X1-Sb interface Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 9: 1951-1955. DOI: 10.1116/1.577433 |
0.691 |
|
| 1991 |
Richter M, Woicik JC, Nogami J, Pianetta P, Miyano KE, Baski AA, Kendelewicz T, Bouldin CE, Spicer WE, Quate CF, Lindau I. Erratum: ``Surface extended-x-ray-absorption fine structure and scanning tunneling microscopy of Si(001)2×1-Sb'' [Phys. Rev. Lett. 65, 3417 (1990)] Physical Review Letters. 66: 2836. DOI: 10.1103/Physrevlett.66.2836 |
0.701 |
|
| 1991 |
King PL, Borg A, Kim C, Yoshikawa SA, Pianetta P, Lindau I. Synchrotron-based imaging with a magnetic projection photoelectron microscope Ultramicroscopy. 36: 117-129. DOI: 10.1016/0304-3991(91)90143-T |
0.48 |
|
| 1991 |
Pan LS, Kania DR, Pianetta P, Landstrass M, Landen OL, Plano LS. Photoconductive measurements on microwave-assisted plasma-enhanced chemically vapor deposited diamond films Surface & Coatings Technology. 47: 356-364. DOI: 10.1016/0257-8972(91)90301-C |
0.305 |
|
| 1991 |
Redaelli R, Pianetta P, Rousseaux F, Haghiri-Gosnet AM, Kebabi BK, Madouri A. X-ray induced damage studies in sic X-ray lithography mask membranes Microelectronic Engineering. 13: 263-266. DOI: 10.1016/0167-9317(91)90089-V |
0.351 |
|
| 1990 |
Richter M, Woicik JC, Nogami J, Pianetta P, Miyano KE, Baski AA, Kendelewicz T, Bouldin CE, Spicer WE, Quate CF, Lindau I. Surface extended-x-ray-absorption fine structure and scanning tunneling microscopy of Si(001)2 x 1-Sb. Physical Review Letters. 65: 3417-3420. PMID 10042866 DOI: 10.1103/Physrevlett.65.3417 |
0.703 |
|
| 1990 |
Kendelewicz T, Miyano K, Cao R, Pianetta P, Lindau I, Spicer WE, Woicik JC. Semiconductor surface core level shifts by use of selected overlayers Physica Scripta. 41: 1034-1036. DOI: 10.1088/0031-8949/41/6/072 |
0.659 |
|
| 1990 |
King PL, Borg A, Kim C, Pianetta P, Lindau I, Knapp G, Keenlyside M. Small area photoemission and photoabsorption measurements using a photoelectron microscope Physica Scripta. 41: 413-417. DOI: 10.1088/0031-8949/41/4/007 |
0.486 |
|
| 1990 |
Kania DR, Pan LS, Bell P, Landen OL, Kornblum H, Pianetta P, Perry MD. Absolute x-ray power measurements with subnanosecond time resolution using type IIa diamond photoconductors Journal of Applied Physics. 68: 124-130. DOI: 10.1063/1.347104 |
0.331 |
|
| 1990 |
Kania DR, Pan L, Kornblum H, Bell P, Landen ON, Pianetta P. Soft x-ray detection with diamond photoconductive detectors Review of Scientific Instruments. 61: 2765-2767. DOI: 10.1063/1.1141824 |
0.314 |
|
| 1990 |
Pianetta P, King PL, Borg A, Kim C, Lindau I, Knapp G, Keenlyside M, Browning R. Core level photoelectron microscopy Journal of Electron Spectroscopy and Related Phenomena. 52: 797-810. DOI: 10.1016/0368-2048(90)85065-H |
0.511 |
|
| 1990 |
King PL, Borg A, Kim C, Pianetta P, Lindau I, Knapp GS, Keenlyside M, Browning R. From small-area to imaging photoabsorption spectroscopy Nuclear Instruments & Methods in Physics Research Section a-Accelerators Spectrometers Detectors and Associated Equipment. 291: 19-25. DOI: 10.1016/0168-9002(90)90027-4 |
0.472 |
|
| 1989 |
Woicik JC, Pianetta P, Kendelewicz T. Si(111) 2 x 1 surface core-level shifts investigated by use of Ge overlayer. Physical Review. B, Condensed Matter. 40: 12463-12467. PMID 9991881 DOI: 10.1103/Physrevb.40.12463 |
0.415 |
|
| 1989 |
Woicik JC, Pianetta P, Sorensen SL, Crasemann B. Photon-energy-sensitive Si L2,3VV Auger satellite. Physical Review. B, Condensed Matter. 39: 6048-6051. PMID 9949027 DOI: 10.1103/Physrevb.39.6048 |
0.537 |
|
| 1989 |
Woicik JC, Pate BB, Pianetta P. Silicon (111) 2 x 1 surface states: K-edge transitions and surface-selective L2,3VV Auger line shape. Physical Review. B, Condensed Matter. 39: 8593-8604. PMID 9947572 DOI: 10.1103/Physrevb.39.8593 |
0.631 |
|
| 1989 |
King PL, Browning R, Pianetta P, Lindau I, Keenlyside M, Knapp G. Image processing of multispectral x-ray photoelectron spectroscopy images Journal of Vacuum Science and Technology. 7: 3301-3304. DOI: 10.1116/1.576140 |
0.454 |
|
| 1989 |
Pianetta P, Lindau I, King PL, Keenlyside M, Knapp G, Browning R. Core level photoelectron microscopy with synchrotron radiation (invited) Review of Scientific Instruments. 60: 1686-1689. DOI: 10.1063/1.1141066 |
0.305 |
|
| 1988 |
Hwang J, Pianetta P, Pao Y, Shih CK, Shen Z, Lindberg PA, Chow R. k-resolved alloy bowing in pseudobinary InxGa Physical Review Letters. 61: 877-880. PMID 10039453 DOI: 10.1103/Physrevlett.61.877 |
0.349 |
|
| 1988 |
Kendelewicz T, Soukiassian P, List RS, Woicik JC, Pianetta P, Lindau I, Spicer WE. Bonding at the K/Si(100) 2 x 1 interface: A surface extended x-ray-absorption fine-structure study. Physical Review. B, Condensed Matter. 37: 7115-7117. PMID 9943990 DOI: 10.1103/Physrevb.37.7115 |
0.664 |
|
| 1988 |
Barbee TW, Pianetta P. Multilayer Monochromators for the Soft X-Ray and Extreme Ultraviolet Mrs Proceedings. 143. DOI: 10.1557/Proc-143-299 |
0.322 |
|
| 1988 |
King PL, Pan L, Pianetta P, Shimkunas A, Mauger P, Seligson D. Radiation damage in boron nitride x-ray lithography masks Journal of Vacuum Science & Technology B. 6: 162-166. DOI: 10.1116/1.584036 |
0.348 |
|
| 1988 |
Kendelewicz T, Woicik JC, List RS, Soukiassian P, Pate BB, Pianetta P, Lindau L, Spicer WE. Summary Abstract: Bonding at the K/Si(100)2 x 1 interface: A surface extended x-ray absorption fine-structure study Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 6: 879-880. DOI: 10.1116/1.575063 |
0.61 |
|
| 1988 |
Cicco AD, Bianconi A, Benfatto M, Marcelli A, Natoli CR, Pianetta P, Woicik J. Orientational disorder in amorphous silicon probed by XANES (X-ray Absorption near Edge Structure) Physica Scripta. 38: 408-411. DOI: 10.1088/0031-8949/38/3/011 |
0.569 |
|
| 1988 |
Seligson D, Pan L, King P, Pianetta P. Soft X-ray dosimetry and its application on the lithography beamline at SSRL Nuclear Instruments & Methods in Physics Research Section a-Accelerators Spectrometers Detectors and Associated Equipment. 266: 612-618. DOI: 10.1016/0168-9002(88)90454-8 |
0.351 |
|
| 1988 |
Pan L, King PL, Pianetta P, Seligson D, Barbee TW. Synchrotron-based X-ray lithography at Stanford University Nuclear Instruments & Methods in Physics Research Section a-Accelerators Spectrometers Detectors and Associated Equipment. 266: 287-292. DOI: 10.1016/0168-9002(88)90398-1 |
0.32 |
|
| 1988 |
Bachrach RZ, Bringans RD, Swartz LE, Lindau I, Pate BB, Carr RG, Hower N, Youngman B, Morales H, Pianetta P. Multi-Undulator Beam Line V at SSRL: A progress report Nuclear Inst. and Methods in Physics Research, A. 266: 83-90. DOI: 10.1016/0168-9002(88)90364-6 |
0.438 |
|
| 1988 |
Woicik JC, List RS, Pate BB, Pianetta P. Splitting of the “white line” 1s absorption edge in crystalline Si, SiGe, and dilute SiGe Solid State Communications. 65: 685-688. DOI: 10.1016/0038-1098(88)90364-X |
0.576 |
|
| 1987 |
Bianconi A, Di Cicco A, Pavel NV, Benfatto M, Marcelli A, Natoli CR, Pianetta P, Woicik J. Multiple-scattering effects in the K-edge x-ray-absorption near-edge structure of crystalline and amorphous silicon. Physical Review. B, Condensed Matter. 36: 6426-6433. PMID 9942352 DOI: 10.1103/Physrevb.36.6426 |
0.517 |
|
| 1987 |
Woicik JC, List RS, Pate BB, Pianetta P. Epitaxial Growth and Band Structure Effects at the Si/Ge(111) Interface Mrs Proceedings. 102: 283. DOI: 10.1557/Proc-102-283 |
0.561 |
|
| 1987 |
Barbee TW, Pianetta P, Redaelli R, Tatchyn R. Molybdenum‐silicon multilayer monochromator for the extreme ultraviolet Applied Physics Letters. 50: 1841-1843. DOI: 10.1063/1.97714 |
0.34 |
|
| 1986 |
Mahowald PH, List RS, Spicer WE, Woicik J, Pianetta P. Erratum: Heterojunction band discontinuity at the Si–Ge interface [J. Vac. Sci. Technol. B 3, 1252 (1985)] Journal of Vacuum Science & Technology B. 4: 45-45. DOI: 10.1116/1.583350 |
0.505 |
|
| 1986 |
Woicik JC, List RS, Pate BB, Pianetta P. The Silicon/Germanium (111) Interface : The Onset Of Epitaxy Le Journal De Physique Colloques. 47. DOI: 10.1051/Jphyscol:1986893 |
0.55 |
|
| 1986 |
Hecht MH, Grunthaner FJ, Pate BB, Pianetta P, Engelhardt M, Jansen W, Bryson C. Soft X-ray photoemission with the SSX-100 spectrometer Nuclear Inst. and Methods in Physics Research, A. 246: 806-809. DOI: 10.1016/0168-9002(86)90198-1 |
0.383 |
|
| 1986 |
Pianetta P, Redaelli R, Jaeger R, Barbee TW. X-ray lithography at the Stanford Synchrotron Radiation Laboratory☆ Nuclear Instruments & Methods in Physics Research Section a-Accelerators Spectrometers Detectors and Associated Equipment. 246: 641-643. DOI: 10.1016/0168-9002(86)90166-X |
0.325 |
|
| 1986 |
Kania D, Bartlett R, Pianetta P. Subnanosecond time resolved measurements of synchrotron X-ray pulses using photoconductive detectors Nuclear Instruments and Methods in Physics Research Section a: Accelerators, Spectrometers, Detectors and Associated Equipment. 246: 534-536. DOI: 10.1016/0168-9002(86)90146-4 |
0.319 |
|
| 1986 |
Pianetta P, Barbee TW, Redaelli R. Performance of layered synthetic microstructures in monochromator applications in the soft X-ray region Nuclear Instruments & Methods in Physics Research Section a-Accelerators Spectrometers Detectors and Associated Equipment. 246: 352-355. DOI: 10.1016/0168-9002(86)90105-1 |
0.35 |
|
| 1985 |
Katnani AD, Chiaradia P, Cho Y, Mahowald P, Pianetta P, Bauer aR. Effect of an Al interlayer on the GaAs/Ge(100) heterojunction formation. Physical Review. B, Condensed Matter. 32: 4071-4076. PMID 9937562 DOI: 10.1103/Physrevb.32.4071 |
0.352 |
|
| 1985 |
Mahowald PH, List RS, Spicer WE, Woicik J, Pianetta P. Heterojunction band discontinuity at the Si–Ge(111) interface Journal of Vacuum Science & Technology B. 3: 1252-1255. DOI: 10.1116/1.583050 |
0.588 |
|
| 1984 |
Hecht MH, Grunthaner FJ, Pianetta P, Lindau I, Johansson LI. Electron Escape Depth Variation in thin Si02 Films Measured with Variable Photon Energy Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 2: 584-587. DOI: 10.1116/1.572450 |
0.553 |
|
| 1984 |
Kania DR, Bartlett RJ, Wagner RS, Hammond RB, Pianetta P. Pulsed soft x-ray response of InP:Fe photoconductors Applied Physics Letters. 44: 1059-1061. DOI: 10.1063/1.94642 |
0.319 |
|
| 1984 |
Bachrach RZ, Bringans RD, Hower N, Lindau I, Pate BB, Pianetta P, Swartz LE, Tatchyn R. Design process and modeling studies of SSRL beam line wunder Nuclear Instruments and Methods in Physics Research. 222: 70-79. DOI: 10.1016/0167-5087(84)90506-4 |
0.459 |
|
| 1983 |
Ling DT, Miller JN, Weissman DL, Pianetta P, Stefan PM, Lindau I, Spicer WE. An angle-resolved photoemission study of the chemisorption of chalcogens on Cu(100) III. Cu(100) + p(2 x 2)S Surface Science. 124: 175-187. DOI: 10.1016/0039-6028(83)90343-6 |
0.534 |
|
| 1982 |
Ling DT, Miller JN, Pianetta P, Weissman DL, Lindau I, Spicer WE. Angle‐resolved photoemission studies of oxide formation on Cu(100) Journal of Vacuum Science and Technology. 21: 47-49. DOI: 10.1116/1.571734 |
0.489 |
|
| 1980 |
Ling DT, Miller JN, Weissman DL, Pianetta P, Johansson LI, Lindau I, Spicer WE. An angle-resolved photoemission study of the chemisorption of chalcogens on Cu(100): I. The clean surface Surface Science Letters. 92: 350-364. DOI: 10.1016/0167-2584(80)90079-1 |
0.549 |
|
| 1980 |
Ling DT, Miller JN, Weissman DL, Pianetta P, Stefan PM, Lindau I, Spicer WE. An angle-resolved photoemission study of the chemisorption of chalcogens on Cu(100) Surface Science Letters. 92: 350-364. DOI: 10.1016/0039-6028(80)90130-2 |
0.43 |
|
| 1979 |
Skeath P, Su CY, Chye PW, Pianetta P, Lindau I, Spicer WE. Comparative studies of oxygen adsorption on GaAs(110) surfaces with ultrathin aluminum and cesium overlayers Journal of Vacuum Science and Technology. 16: 1439-1442. DOI: 10.1116/1.570217 |
0.575 |
|
| 1979 |
Stöhr J, Johansson LI, Lindau I, Pianetta P. EXAFS studies of the bonding geometry of oxygen on Si(111) using electron yield detection Journal of Vacuum Science and Technology. 16: 1221-1224. DOI: 10.1116/1.570195 |
0.578 |
|
| 1979 |
Stöhr J, Johansson L, Lindau I, Pianetta P. Extended-x-ray-absorption-fine-structure studies of low- Z atoms in solids and on surfaces: Studies of Si 3 N 4 , Si O 2 , and oxygen on Si(111) Physical Review B. 20: 664-680. DOI: 10.1103/Physrevb.20.664 |
0.581 |
|
| 1979 |
Garner CM, Lindau I, Su CY, Pianetta P, Spicer WE. Electron-spectroscopic studies of the early stages of the oxidation of Si Physical Review B. 19: 3944-3956. DOI: 10.1103/Physrevb.19.3944 |
0.587 |
|
| 1979 |
Lindau I, Spicer WE, Pianetta P, Chye PW, Garner CM. Ad-atom interactions with III-V semiconductor surfaces Journal of Electron Spectroscopy and Related Phenomena. 15: 197-200. DOI: 10.1016/0368-2048(79)87032-2 |
0.57 |
|
| 1979 |
Skeath P, Lindau I, Pianetta P, Chye PW, Su CY, Spicer WE. Photoemission study of the interaction of Al with a GaAs (110) surface Journal of Electron Spectroscopy and Related Phenomena. 17: 259-265. DOI: 10.1016/0368-2048(79)80016-X |
0.52 |
|
| 1979 |
Spicer WE, Lindau I, Pianetta P, Chye PW, Garner CM. Fundamental studies of III-V surfaces and the (III-V)-oxide interface Thin Solid Films. 56: 1-18. DOI: 10.1016/0040-6090(79)90048-8 |
0.558 |
|
| 1979 |
Su CY, Chye PW, Pianetta P, Lindau I, Spicer WE. Oxygen adsorption on Cs covered GaAs(110) surfaces Surface Science. 86: 894-899. DOI: 10.1016/0039-6028(79)90472-2 |
0.547 |
|
| 1979 |
Spicer WE, Chye PW, Garner CM, Lindau I, Pianetta P. The surface electronic structure of 3-5 compounds and the mechanism of Fermi level pinning by oxygen (passivation) and metals (Schottky barriers) Surface Science. 86: 763-788. DOI: 10.1016/0039-6028(79)90458-8 |
0.572 |
|
| 1979 |
Chye PW, Su CY, Lindau I, Garner CM, Pianetta P, Spicer WE. Photoemission studies of the initial stages of oxidation of GaSb and InP Surface Science. 88: 439-460. DOI: 10.1016/0039-6028(79)90085-2 |
0.534 |
|
| 1978 |
Pianetta P, Lindau I, Spicer WE. The Use of Soft X-Ray Photoemission Spectroscopy to Study the Adsorption of Oxygen on the (110) Surface of Gallium Arsenide and Gallium Antimonide Astm Special Technical Publications. 105-123. DOI: 10.1520/Stp25603S |
0.6 |
|
| 1978 |
Lindau I, Chye PW, Garner CM, Pianetta P, Su CY, Spicer WE. New phenomena in Schottky barrier formation on III–V compounds Journal of Vacuum Science and Technology. 15: 1332-1339. DOI: 10.1116/1.569761 |
0.561 |
|
| 1978 |
Garner CM, Lindau I, Su CY, Pianetta P, Spicer WE. Abstract: Bonding states of oxygen on silicon Journal of Vacuum Science and Technology. 15: 1290-1291. DOI: 10.1116/1.569755 |
0.49 |
|
| 1978 |
Skeath P, Saperstein WA, Pianetta P, Lindau I, Spicer WE, Mark P. UPS and LEED studies of GaAs (110) and (111) As surfaces Journal of Vacuum Science and Technology. 15: 1219-1222. DOI: 10.1116/1.569696 |
0.55 |
|
| 1978 |
Ling DT, Miller JN, Pianetta PA, Weissman DL, Lindau I, Spicer WE. Abstract: Adsorption of oxygen on Cu(100)−A study by angularly resolved ultraviolet photoemission spectroscopy (ARUPS) Journal of Vacuum Science and Technology. 15: 495-496. DOI: 10.1116/1.569605 |
0.469 |
|
| 1978 |
Garner CM, Lindau I, Su CY, Pianetta P, Miller JN, Spicer WE. New phenomenon in the absorption of oxygen on silicon Physical Review Letters. 40: 403-406. DOI: 10.1103/Physrevlett.40.403 |
0.554 |
|
| 1978 |
Chye PW, Lindau I, Pianetta P, Garner CM, Su CY, Spicer WE. Photoemission study of Au Schottky-barrier formation on GaSb, GaAs, and InP using synchrotron radiation Physical Review B. 18: 5545-5559. DOI: 10.1103/Physrevb.18.5545 |
0.54 |
|
| 1978 |
Pianetta P, Lindau I, Garner CM, Spicer WE. Chemisorption and oxidation studies of the (110) surfaces of GaAs, GaSb, and InP Physical Review B. 18: 2792-2806. DOI: 10.1103/Physrevb.18.2792 |
0.567 |
|
| 1978 |
Chye PW, Lindau I, Pianetta P, Garner CM, Spicer WE. Evidence for a new type of metal-semiconductor interaction on GaSb Physical Review B. 17: 2682-2684. DOI: 10.1103/Physrevb.17.2682 |
0.533 |
|
| 1978 |
Spicer WE, Lindau I, Su CY, Chye PW, Pianetta P. Core-level photoemission of the Cs-O adlayer of NEA GaAs cathodes Applied Physics Letters. 33: 934-935. DOI: 10.1063/1.90223 |
0.523 |
|
| 1978 |
Lindau I, Pianetta P, Spicer WE, Gregory PE, Garner CM, Chye PW. Oxygen adsorption and the surface electronic structure of GaAs (110) Journal of Electron Spectroscopy and Related Phenomena. 13: 155-160. DOI: 10.1016/0368-2048(78)85023-3 |
0.548 |
|
| 1978 |
Pianetta P, Lindau I, Gregory PE, Garner CM, Spicer WE. Valence band studies of clean and oxygen exposed GaAs(100) surfaces Surface Science. 72: 298-320. DOI: 10.1016/0039-6028(78)90297-2 |
0.554 |
|
| 1978 |
Pianetta P, Lindau I. Phase space analysis applied to x-ray optics Nuclear Instruments and Methods. 152: 155-159. DOI: 10.1016/0029-554X(78)90256-2 |
0.512 |
|
| 1977 |
Chye PW, Pianetta P, Lindau I, Spicer WE. Oxygen sorption and excitonic effects on GaAs surfaces Journal of Vacuum Science and Technology. 14: 917-919. DOI: 10.1116/1.569328 |
0.552 |
|
| 1977 |
Spicer WE, Pianetta P, Lindau I, Chye PW. Surface and interface states on GaAs(110): Effects of atomic and electronic rearrangements Journal of Vacuum Science and Technology. 14: 885-893. DOI: 10.1116/1.569323 |
0.588 |
|
| 1977 |
Garner CM, Lindau I, Miller JN, Pianetta P, Spicer WE. Photoemission studies of the surface states and oxidation of group IV semiconductors Journal of Vacuum Science and Technology. 14: 372-375. DOI: 10.1116/1.569210 |
0.583 |
|
| 1977 |
Pianetta P, Lindau I, Garner CM, Spicer WE. Reply to "oxidation properties of GaAs (110) surfaces" by R. Ludeke Physical Review B. 16: 5600-5602. DOI: 10.1103/Physrevb.16.5600 |
0.561 |
|
| 1977 |
Spicer WE, Lindau I, Miller JN, Ling DT, Pianetta P, Chye PW, Garner CM. Studies of surface electronic structure and surface chemistry using synchrotron radiation Physica Scripta. 16: 388-397. DOI: 10.1088/0031-8949/16/5-6/037 |
0.576 |
|
| 1977 |
Chye PW, Lindau I, Pianetta P, Garner CM, Spicer WE. Do the Au 5d-bands narrow at the surface: Comparison with Au alloys Physics Letters A. 63: 387-389. DOI: 10.1016/0375-9601(77)90941-0 |
0.519 |
|
| 1977 |
Pianetta P, Lindau I. High resolution X-ray spectroscopy using synchrotron radiation: Source characteristics and optical systems Journal of Electron Spectroscopy and Related Phenomena. 11: 13-38. DOI: 10.1016/0368-2048(77)85046-9 |
0.494 |
|
| 1977 |
Lindau I, Pianetta P, Garner CM, Chye PW, Gregory PE, Spicer WE. Photoemission studies of the electronic structure of III-V semiconductor surfaces Surface Science. 63: 45-55. DOI: 10.1016/0039-6028(77)90325-9 |
0.588 |
|
| 1977 |
Mark P, Pianetta P, Lindau I, Spicer WE. A comparison of LEED intensity data from chemically polished and cleaved GaAs(110) surfaces Surface Science. 69: 735-740. DOI: 10.1016/0039-6028(77)90151-0 |
0.522 |
|
| 1976 |
Spicer WE, Lindau I, Gregory PE, Garner CM, Pianetta P, Chye PW. Synchrotron radiation studies of electronic structure and surface chemistry of GaAs, GaSb, and InP Journal of Vacuum Science and Technology. 13: 780-785. DOI: 10.1116/1.568989 |
0.567 |
|
| 1976 |
Yu KY, Spicer WE, Lindau I, Pianetta P, Lin SF. Relationship of heat of chemisorption to π‐ and σ‐level shifts as measured by photoemission Journal of Vacuum Science and Technology. 13: 277-279. DOI: 10.1116/1.568869 |
0.465 |
|
| 1976 |
Lindau I, Pianetta P, Yu KY, Spicer WE. Photoemission from some metals and semiconductors in the energy range 5–350 eV Journal of Vacuum Science and Technology. 13: 269-272. DOI: 10.1116/1.568866 |
0.538 |
|
| 1976 |
Pianetta P, Lindau I, Garner CM, Spicer WE. Oxidation properties of GaAs (110) surfaces Physical Review Letters. 37: 1166-1169. DOI: 10.1103/Physrevlett.37.1166 |
0.548 |
|
| 1976 |
Lindau I, Pianetta P, Yu KY, Spicer WE. Photoemission of gold in the energy range 30-300 eV using synchrotron radiation Physical Review B. 13: 492-495. DOI: 10.1103/Physrevb.13.492 |
0.51 |
|
| 1976 |
Lindau I, Pianetta P, Spicer WE. The energy dependence of the 4d photoionization cross-section of In and Sb Physics Letters A. 57: 225-226. DOI: 10.1016/0375-9601(76)90044-X |
0.464 |
|
| 1976 |
Lindau I, Pianetta P, Yu KY, Spicer WE. Determination of the escape depth of photoemitted electrons in gold in the energy range 25–75 eV by use of synchrotron radiation Journal of Electron Spectroscopy and Related Phenomena. 8: 487-491. DOI: 10.1016/0368-2048(76)80036-9 |
0.496 |
|
| 1976 |
Yu KY, Spicer WE, Lindau I, Pianetta P, Lin SF. UPS studies of the bonding of H2, O2, CO, C2H4 and C2H2 on Fe and Cu☆ Surface Science. 57: 157-183. DOI: 10.1016/0039-6028(76)90175-8 |
0.476 |
|
| 1975 |
Pianetta P, Lindau I, Garner C, Spicer WE. Determination of the Oxygen Binding Site on GaAs(110) Using Soft-X-Ray-Photoemission Spectroscopy Physical Review Letters. 35: 1356-1359. DOI: 10.1103/Physrevlett.35.1356 |
0.55 |
|
| 1975 |
Lindau I, Pianetta P, Yu K, Spicer WE. The intrinsic linewidth of the 4f levels in gold as determined by photoemission Physics Letters A. 54: 47-48. DOI: 10.1016/0375-9601(75)90601-5 |
0.495 |
|
| 1974 |
Lindau I, Pianetta P, Doniach S, Spicer WE. X-ray photoemission spectroscopy Nature. 250: 214-215. DOI: 10.1038/250214A0 |
0.529 |
|
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