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Cheng Liu - Publications

Affiliations: 
2012- Engineering Physics University of Wisconsin, Madison, Madison, WI 
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11 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2020 Wang X, Zhang H, Baba T, Jiang H, Liu C, Guan Y, Elleuch O, Kuech T, Morgan D, Idrobo JC, Voyles PM, Szlufarska I. Radiation-induced segregation in a ceramic. Nature Materials. PMID 32451511 DOI: 10.1038/S41563-020-0683-Y  0.714
2020 Xi J, Liu C, Morgan D, Szlufarska I. An Unexpected Role of H During SiC Corrosion in Water The Journal of Physical Chemistry C. 124: 9394-9400. DOI: 10.1021/Acs.Jpcc.0C02027  0.715
2020 Xi J, Liu C, Szlufarska I. Effects of point defects on oxidation of 3C–SiC Journal of Nuclear Materials. 538: 152308. DOI: 10.1016/J.Jnucmat.2020.152308  0.736
2019 Liu C, Xi J, Szlufarska I. Sensitivity of SiC Grain Boundaries to Oxidation The Journal of Physical Chemistry C. 123: 11546-11554. DOI: 10.1021/Acs.Jpcc.9B00068  0.723
2019 Xi J, Jiang H, Liu C, Morgan D, Szlufarska I. Corrosion of Si, C, and SiC in molten salt Corrosion Science. 146: 1-9. DOI: 10.1016/J.Corsci.2018.10.027  0.71
2018 Liu C, Szlufarska I. Distribution of defect clusters in the primary damage of ion irradiated 3C-SiC Journal of Nuclear Materials. 509: 392-400. DOI: 10.1016/J.Jnucmat.2018.07.010  0.582
2017 Liu C, He L, Zhai Y, Tyburska-Püschel B, Voyles P, Sridharan K, Morgan D, Szlufarska I. Evolution of small defect clusters in ion-irradiated 3C-SiC: Combined cluster dynamics modeling and experimental study Acta Materialia. 125: 377-389. DOI: 10.1016/J.Actamat.2016.12.020  0.571
2016 Tyburska-Püschel B, Zhai Y, He L, Liu C, Boulle A, Voyles PM, Szlufarska I, Sridharan K. Size distribution of black spot defects and their contribution to swelling in irradiated SiC Journal of Nuclear Materials. 476: 132-139. DOI: 10.1016/J.Jnucmat.2016.04.044  0.591
2015 He L, Jiang H, Zhai Y, Liu C, Szlufarska I, Tyburska-Puschel B, Sridharan K, Voyles P. Atomic Resolution Imaging of Black Spot Defects in Ion Irradiated Silicon Carbide Microscopy and Microanalysis. 21: 1337-1338. DOI: 10.1017/S1431927615007473  0.619
2015 Liu C, Swaminathan N, Morgan D, Szlufarska I. Corrigendum to “Ab initio based rate theory model of radiation induced amorphization in β-SiC” [J. Nucl. Mater. 414 (2011) 431–439] Journal of Nuclear Materials. 457: 369. DOI: 10.1016/J.Jnucmat.2014.12.091  0.546
2014 He L, Zhai Y, Liu C, Jiang C, Szlufarska I, Tyburska-Puschel B, Sridharan K, Voyles P. High-Resolution Scanning Transmission Electron Microscopy Study of Black Spot Defects in Ion Irradiated Silicon Carbide Microscopy and Microanalysis. 20: 1824-1825. DOI: 10.1017/S143192761401085X  0.582
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