Year |
Citation |
Score |
2020 |
Cheng J, Wang C, Freeze C, Shoron O, Combs N, Yang H, Kalarickal NK, Xia Z, Stemmer S, Rajan S, Lu W. High-Current Perovskite Oxide BaTiO 3 /BaSnO 3 Heterostructure Field Effect Transistors Ieee Electron Device Letters. 41: 621-624. DOI: 10.1109/Led.2020.2976456 |
0.656 |
|
2020 |
Kumar N, Vaca D, Joishi C, Xia Z, Rajan S, Kumar S. Ultrafast Thermoreflectance Imaging and Electrothermal Modeling of β-Ga2O3 MESFETs Ieee Electron Device Letters. 41: 641-644. DOI: 10.1109/Led.2020.2975038 |
0.384 |
|
2020 |
Kalarickal NK, Xia Z, McGlone JF, Liu Y, Moore W, Arehart AR, Ringel SA, Rajan S. High electron density β-(Al0.17Ga0.83)2O3/Ga2O3 modulation doping using an ultra-thin (1 nm) spacer layer Journal of Applied Physics. 127: 215706. DOI: 10.1063/5.0005531 |
0.657 |
|
2020 |
Razzak T, Chandrasekar H, Hussain K, Lee CH, Mamun A, Xue H, Xia Z, Sohel SH, Rahman MW, Bajaj S, Wang C, Lu W, Khan A, Rajan S. BaTiO3/Al0.58Ga0.42N lateral heterojunction diodes with breakdown field exceeding 8 MV/cm Applied Physics Letters. 116: 23507. DOI: 10.1063/1.5130590 |
0.645 |
|
2020 |
Xue H, Hwang S, Razzak T, Lee C, Calderon Ortiz G, Xia Z, Hasan Sohel S, Hwang J, Rajan S, Khan A, Lu W. All MOCVD grown Al0.7Ga0.3N/Al0.5Ga0.5N HFET: An approach to make ohmic contacts to Al-rich AlGaN channel transistors Solid-State Electronics. 164: 107696. DOI: 10.1016/J.Sse.2019.107696 |
0.641 |
|
2020 |
Lee H, Kalarickal NK, Rahman MW, Xia Z, Moore W, Wang C, Rajan S. High-permittivity dielectric edge termination for vertical high voltage devices Journal of Computational Electronics. 1-8. DOI: 10.1007/S10825-020-01553-Y |
0.618 |
|
2020 |
Feng Z, Bhuiyan AFMAU, Xia Z, Moore W, Chen Z, McGlone JF, Daughton DR, Arehart AR, Ringel SA, Rajan S, Zhao H. Probing Charge Transport and Background Doping in Metal‐Organic Chemical Vapor Deposition‐Grown (010) β‐Ga 2 O 3 Physica Status Solidi-Rapid Research Letters. 14: 2000145. DOI: 10.1002/Pssr.202000145 |
0.542 |
|
2019 |
Xue H, Lee CH, Hussian K, Razzak T, Abdullah M, Xia Z, Sohel SH, Khan A, Rajan S, Lu W. Al0.75Ga0.25N/Al0.6Ga0.4N heterojunction field effect transistor with fT of 40 GHz Applied Physics Express. 12: 66502. DOI: 10.7567/1882-0786/Ab1Cf9 |
0.618 |
|
2019 |
Kumar N, Joishi C, Xia Z, Rajan S, Kumar S. Electrothermal Characteristics of Delta-Doped $\beta$ -Ga2O3 Metal–Semiconductor Field-Effect Transistors Ieee Transactions On Electron Devices. 66: 5360-5366. DOI: 10.1109/Ted.2019.2944628 |
0.449 |
|
2019 |
Zhang Y, Xia Z, Mcglone J, Sun W, Joishi C, Arehart AR, Ringel SA, Rajan S. Evaluation of Low-Temperature Saturation Velocity in
$\beta$
-(AlxGa1–x)2O3/Ga2O3 Modulation-Doped Field-Effect Transistors Ieee Transactions On Electron Devices. 66: 1574-1578. DOI: 10.1109/Ted.2018.2889573 |
0.642 |
|
2019 |
Xia Z, Wang C, Kalarickal NK, Stemmer S, Rajan S. Design of Transistors Using High-Permittivity Materials Ieee Transactions On Electron Devices. 66: 896-900. DOI: 10.1109/Ted.2018.2888834 |
0.607 |
|
2019 |
Joishi C, Zhang Y, Xia Z, Sun W, Arehart AR, Ringel S, Lodha S, Rajan S. Breakdown Characteristics of $\beta$ -(Al 0.22 Ga 0.78 ) 2 O 3 /Ga 2 O 3 Field-Plated Modulation-Doped Field-Effect Transistors Ieee Electron Device Letters. 40: 1241-1244. DOI: 10.1109/Led.2019.2921116 |
0.658 |
|
2019 |
Xia Z, Xue H, Joishi C, Mcglone J, Kalarickal NK, Sohel SH, Brenner M, Arehart A, Ringel S, Lodha S, Lu W, Rajan S. $\beta$ -Ga2O3 Delta-Doped Field-Effect Transistors With Current Gain Cutoff Frequency of 27 GHz Ieee Electron Device Letters. 40: 1052-1055. DOI: 10.1109/Led.2019.2920366 |
0.647 |
|
2019 |
Xia Z, Chandrasekar H, Moore W, Wang C, Lee AJ, McGlone J, Kalarickal NK, Arehart A, Ringel S, Yang F, Rajan S. Metal/BaTiO3/β-Ga2O3 dielectric heterojunction diode with 5.7 MV/cm breakdown field Applied Physics Letters. 115: 252104. DOI: 10.1063/1.5130669 |
0.668 |
|
2019 |
Kalarickal NK, Xia Z, McGlone J, Krishnamoorthy S, Moore W, Brenner M, Arehart AR, Ringel SA, Rajan S. Mechanism of Si doping in plasma assisted MBE growth of β-Ga2O3 Applied Physics Letters. 115: 152106. DOI: 10.1063/1.5123149 |
0.665 |
|
2019 |
McGlone JF, Xia Z, Joishi C, Lodha S, Rajan S, Ringel S, Arehart AR. Identification of critical buffer traps in Si δ-doped β-Ga2O3 MESFETs Applied Physics Letters. 115: 153501. DOI: 10.1063/1.5118250 |
0.637 |
|
2019 |
Chandrasekar H, Cheng J, Wang T, Xia Z, Combs NG, Freeze CR, Marshall PB, McGlone J, Arehart A, Ringel S, Janotti A, Stemmer S, Lu W, Rajan S. Velocity saturation in La-doped BaSnO3 thin films Applied Physics Letters. 115: 92102. DOI: 10.1063/1.5097791 |
0.623 |
|
2018 |
Pratiyush AS, Krishnamoorthy S, Kumar S, Xia Z, Muralidharan R, Rajan S, Nath DN. Demonstration of zero bias responsivity in MBE grown β-Ga2O3 lateral deep-UV photodetector Japanese Journal of Applied Physics. 57: 60313. DOI: 10.7567/Jjap.57.060313 |
0.702 |
|
2018 |
Joishi C, Rafique S, Xia Z, Han L, Krishnamoorthy S, Zhang Y, Lodha S, Zhao H, Rajan S. Low-pressure CVD-grown β-Ga2O3 bevel-field-plated Schottky barrier diodes Applied Physics Express. 11: 31101. DOI: 10.7567/Apex.11.031101 |
0.718 |
|
2018 |
Pratiyush AS, Xia Z, Kumar S, Zhang Y, Joishi C, Muralidharan R, Rajan S, Nath DN. MBE-Grown
$\beta$
-Ga2O3-Based Schottky UV-C Photodetectors With Rectification Ratio ~107 Ieee Photonics Technology Letters. 30: 2025-2028. DOI: 10.1109/Lpt.2018.2874725 |
0.631 |
|
2018 |
Mcglone JF, Xia Z, Zhang Y, Joishi C, Lodha S, Rajan S, Ringel SA, Arehart AR. Trapping Effects in Si -Doped -Ga2O3 MESFETs on an Fe-Doped -Ga2O3 Substrate Ieee Electron Device Letters. 39: 1042-1045. DOI: 10.1109/Led.2018.2843344 |
0.593 |
|
2018 |
Xia Z, Joishi C, Krishnamoorthy S, Bajaj S, Zhang Y, Brenner M, Lodha S, Rajan S. Delta Doped $\beta$ -Ga2O3 Field Effect Transistors With Regrown Ohmic Contacts Ieee Electron Device Letters. 39: 568-571. DOI: 10.1109/Led.2018.2805785 |
0.725 |
|
2018 |
Joishi C, Xia Z, McGlone J, Zhang Y, Arehart AR, Ringel S, Lodha S, Rajan S. Effect of buffer iron doping on delta-doped β-Ga2O3 metal semiconductor field effect transistors Applied Physics Letters. 113: 123501. DOI: 10.1063/1.5039502 |
0.616 |
|
2018 |
Zhang Y, Joishi C, Xia Z, Brenner M, Lodha S, Rajan S. Demonstration of β-(AlxGa1-x)2O3/Ga2O3 double heterostructure field effect transistors Applied Physics Letters. 112: 233503. DOI: 10.1063/1.5037095 |
0.644 |
|
2018 |
Zhang Y, Neal A, Xia Z, Joishi C, Johnson JM, Zheng Y, Bajaj S, Brenner M, Dorsey D, Chabak K, Jessen G, Hwang J, Mou S, Heremans JP, Rajan S. Demonstration of high mobility and quantum transport in modulation-doped β-(AlxGa1-x)2O3/Ga2O3 heterostructures Applied Physics Letters. 112: 173502. DOI: 10.1063/1.5025704 |
0.633 |
|
2017 |
Krishnamoorthy S, Xia Z, Bajaj S, Brenner M, Rajan S. Delta-doped β-gallium oxide field-effect transistor Applied Physics Express. 10: 51102. DOI: 10.7567/Apex.10.051102 |
0.722 |
|
2017 |
Krishnamoorthy S, Xia Z, Joishi C, Zhang Y, McGlone J, Johnson J, Brenner M, Arehart AR, Hwang J, Lodha S, Rajan S. Modulation-doped β-(Al0.2Ga0.8)2O3/Ga2O3 field-effect transistor Applied Physics Letters. 111: 023502. DOI: 10.1063/1.4993569 |
0.733 |
|
2017 |
Pratiyush AS, Krishnamoorthy S, Solanke SV, Xia Z, Muralidharan R, Rajan S, Nath DN. High responsivity in molecular beam epitaxy grown beta-Ga2O3 metal semiconductor metal solar blind deep-UV photodetector Applied Physics Letters. 110: 221107. DOI: 10.1063/1.4984904 |
0.691 |
|
Show low-probability matches. |