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Gerald T. Thaler - Publications

Affiliations: 
2004 University of Florida, Gainesville, Gainesville, FL, United States 
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60 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2008 Hite JK, Allums KK, Thaler GT, Abernathy CR, Pearton SJ, Frazier RM, Dwivedi R, Wilkins R, Zavada JM. Effects of proton irradiation on the magnetic properties of GaGdN and GaCrN New Journal of Physics. 10: 055005. DOI: 10.1088/1367-2630/10/5/055005  0.765
2007 Voss LF, Stafford L, Thaler GT, Abernathy CR, Pearton SJ, Chen JJ, Ren F. Annealing and measurement temperature dependence of W 2B- and W 2B 5-based rectifying contacts to p-GaN Journal of Electronic Materials. 36: 384-390. DOI: 10.1007/S11664-006-0054-8  0.523
2007 Hite JK, Frazier RM, Davies RP, Thaler GT, Abernathy CR, Pearton SJ, Zavada JM, Brown E, Hömmerich U. Effect of Si Co Doping on Ferromagnetic Properties of GaGdN Journal of Electronic Materials. 36: 391-396. DOI: 10.1007/S11664-006-0040-1  0.835
2006 Hite J, Thaler GT, Park JH, Steckl AJ, Abernathy CR, Zavada JM, Pearton S. Magnetic and Optical Properties of Eu-doped GaN Mrs Proceedings. 955. DOI: 10.1557/Proc-0955-I15-01  0.766
2006 Zavada JM, Nepal N, Lin J, Kim KH, Jiang HX, Hite J, Thaler GT, Frazier RM, Abernathy CR, Pearton SJ. Photoluminescence from Gd-implanted AlN and GaN epilayers Materials Research Society Symposium Proceedings. 955: 400-403. DOI: 10.1557/Proc-0955-I10-02  0.756
2006 Hite JK, Davies RP, Frazier RM, Thaler GT, Abernathy CR, Pearton SJ, Zavada JM. Properties of Ferromagnetic GaGdN Mrs Proceedings. 955. DOI: 10.1557/Proc-0955-I01-04  0.829
2006 Hite J, Thaler GT, Khanna R, Abernathy CR, Pearton SJ, Park JH, Steckl AJ, Zavada JM. Optical and magnetic properties of Eu-doped GaN Applied Physics Letters. 89: 132119. DOI: 10.1063/1.2358293  0.771
2006 Zavada JM, Nepal N, Lin JY, Jiang HX, Brown E, Hömmerich U, Hite J, Thaler GT, Abernathy CR, Pearton SJ, Gwilliam R. Ultraviolet photoluminescence from Gd-implanted AlN epilayers Applied Physics Letters. 89. DOI: 10.1063/1.2357552  0.69
2006 Hite JK, Frazier RM, Davies R, Thaler GT, Abernathy CR, Pearton SJ, Zavada JM. Effect of growth conditions on the magnetic characteristics of GaGdN Applied Physics Letters. 89: 092119. DOI: 10.1063/1.2337082  0.834
2006 Han SY, Hite J, Thaler GT, Frazier RM, Abernathy CR, Pearton SJ, Choi HK, Lee WO, Park YD, Zavada JM, Gwilliam R. Effect of Gd implantation on the structural and magnetic properties of GaN and AlN Applied Physics Letters. 88: 042102. DOI: 10.1063/1.2167790  0.822
2006 Ip K, Thaler G, Yang H, Youn Han S, Li Y, Norton D, Pearton S, Jang S, Ren F. Contacts to ZnO Journal of Crystal Growth. 287: 149-156. DOI: 10.1016/J.Jcrysgro.2005.10.059  0.343
2005 Thaler G, Frazier R, Gila B, Stapleton J, Davies R, Abernathy CR, Pearton SJ. Effect of oxygen co-doping on the electronic and magnetic properties of Ga(1-x)MnxN Electrochemical and Solid-State Letters. 8: G20-G22. DOI: 10.1149/1.1830394  0.821
2005 Polyakov AY, Smirnov NB, Govorkov AV, Thaler GT, Frazier RM, Abernathy CR, Pearton SJ. Electrical and optical properties of GaCrN films grown by molecular beam epitaxy Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 23: 1. DOI: 10.1116/1.1829059  0.734
2005 Chen WM, Buyanova IA, Nishibayashi K, Kayanuma K, Seo K, Murayama A, Oka Y, Thaler G, Frazier R, Abernathy CR, Ren F, Pearton SJ, Pan C, Chen G, Chyi J. Efficient spin relaxation in InGaN∕GaN and InGaN∕GaMnN quantum wells: An obstacle to spin detection Applied Physics Letters. 87: 192107. DOI: 10.1063/1.2125125  0.673
2005 Gila BP, Hlad M, Onstine AH, Frazier R, Thaler GT, Herrero A, Lambers E, Abernathy CR, Pearton SJ, Anderson T, Jang S, Ren F, Moser N, Fitch RC, Freund M. Improved oxide passivation of AlGaNGaN high electron mobility transistors Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2105987  0.735
2005 Thaler GT, Frazier RM, Abernathy CR, Pearton SJ. Growth and thermal stability of Ga(1-X) CrXN films Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1895479  0.776
2005 Frazier RM, Thaler GT, Leifer JY, Hite JK, Gila BP, Abernathy CR, Pearton SJ. Role of growth conditions on magnetic properties of AlCrN grown by molecular beam epitaxy Applied Physics Letters. 86: 052101. DOI: 10.1063/1.1857074  0.83
2005 Frazier RM, Thaler GT, Gila BP, Stapleton J, Overberg ME, Abernathy CR, Pearton SJ, Ren F, Zavada JM. AIN-based dilute magnetic semiconductors Journal of Electronic Materials. 34: 365-369. DOI: 10.1007/S11664-005-0112-7  0.832
2004 Pearton SJ, Abernathy CR, Thaler GT, Frazier RM, Heo YH, Ivill M, Norton DP, Park YD. Progress in Wide Bandgap Ferromagnetic Semiconductors and Semiconducting Oxides Defect and Diffusion Forum. 17-46. DOI: 10.4028/Www.Scientific.Net/Ddf.230-232.17  0.646
2004 Overberg ME, Thaler GT, Frazier RM, Abernathy CR, Pearton SJ, Rairigh R, Kelly J, Theodoropoulou NA, Hebard AF, Wilson RG, Zavada JM. Ferromagnetic AlGaCrP Films by Ion Implantation Electrochemical and Solid-State Letters. 7. DOI: 10.1149/1.1640491  0.827
2004 Thaler GT, Frazier RM, Stapleton J, Abernathy CR, Pearton SJ, Kelly J, Rairigh R, Hebard AF, Zavada JM. Properties of (Ga, Mn)N With and Without Detectable Second Phases Electrochemical and Solid-State Letters. 7: G34-G36. DOI: 10.1149/1.1635771  0.767
2004 Polyakov AY, Smirnov NB, Govorkov AV, Frazier RM, Liefer JY, Thaler GT, Abernathy CR, Pearton SJ, Zavada JM. Optical and electrical properties of AlCrN films grown by molecular beam epitaxy Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 22: 2758. DOI: 10.1116/1.1819927  0.753
2004 Buyanova IA, Bergman JP, Chen WM, Thaler G, Frazier R, Abernathy CR, Pearton SJ, Kim J, Ren F, Kyrychenko FV, Stanton CJ, Pan C, Chen G, Chyi J, Zavada JM. Optical study of spin injection dynamics in InGaN∕GaN quantum wells with GaMnN injection layers Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 22: 2668. DOI: 10.1116/1.1819897  0.701
2004 Pearton SJ, Abernathy CR, Thaler GT, Frazier RM, Norton DP, Ren F, Park YD, Zavada JM, Buyanova IA, Chen WM, Hebard AF. Wide bandgap GaN-based semiconductors for spintronics Journal of Physics Condensed Matter. 16. DOI: 10.1088/0953-8984/16/7/R03  0.764
2004 Polyakov AY, Smirnov NB, Govorkov AV, Pearton SJ, Frazier RM, Thaler GT, Abernathy CR, Zavada JM. High-dose Mn and Cr implantation into p-AlGaN films Semiconductor Science and Technology. 19: 1169-1173. DOI: 10.1088/0268-1242/19/10/001  0.754
2004 Polyakov AY, Smirnov NB, Govorkov AV, Frazier RM, Liefer JY, Thaler GT, Abernathy CR, Pearton SJ, Zavada JM. Properties of highly Cr-doped AlN Applied Physics Letters. 85: 4067-4069. DOI: 10.1063/1.1812845  0.754
2004 Thaler G, Frazier R, Gila B, Stapleton J, Davidson M, Abernathy CR, Pearton SJ, Segre C. Effect of nucleation layer on the magnetic properties of GaMnN Applied Physics Letters. 84: 2578-2580. DOI: 10.1063/1.1695207  0.819
2004 Buyanova IA, Izadifard M, Chen WM, Kim J, Ren F, Thaler G, Abernathy CR, Pearton SJ, Pan C, Chen G, Chyi J, Zavada JM. On the origin of spin loss in GaMnN/InGaN light-emitting diodes Applied Physics Letters. 84: 2599-2601. DOI: 10.1063/1.1695100  0.452
2004 Thaler G, Frazier R, Gila B, Stapleton J, Davidson M, Abernathy CR, Pearton SJ, Segre C. Effect of Mn concentration on the structural, optical, and magnetic properties of GaMnN Applied Physics Letters. 84: 1314-1316. DOI: 10.1063/1.1649819  0.812
2004 Buyanova IA, Izadifard M, Storasta L, Chen WM, Kim J, Ren F, Thaler G, Abernathy CR, Pearton SJ, Pan C-, Chen G-, Chyi J-, Zavada JM. Optical and electrical characterization of (Ga,Mn)N/InGaN multiquantum well light-emitting diodes Journal of Electronic Materials. 33: 467-471. DOI: 10.1007/S11664-004-0204-9  0.53
2004 Polyakov AY, Smirnov NB, Govorkov AV, Frazier RM, Thaler GT, Abernathy CR, Pearton SJ, Zavada JM, Wilson RG. Optical and electrical properties of AlGaN films implanted with Mn, Co, or Cr Journal of Electronic Materials. 33: 384-388. DOI: 10.1007/S11664-004-0188-5  0.754
2004 Polyakov AY, Smirnov NB, Govorkov AV, Kim J, Ren F, Thaler GT, Frazier RM, Gila BP, Abernathy CR, Pearton SJ, Buyanova IA, Rudko GY, Chen WM, Pan C-, Chen G-, et al. Electrical and luminescent properties and the spectra of deep centers in GaMnN/InGaN light-emitting diodes Journal of Electronic Materials. 33: 241-247. DOI: 10.1007/S11664-004-0186-7  0.786
2003 Pearton SJ, Abernathy CR, Thaler GT, Frazier R, Norton DP, Kelly J, Rairigh R, Hebard AF, Park YD, Zavada JM. Wide bandgap materials for semiconductor spintronics Materials Research Society Symposium - Proceedings. 799: 287-298. DOI: 10.1557/Proc-799-Z9.6  0.759
2003 Overberg ME, Baik KH, Thaler GT, Abernathy CR, Pearton SJ, Kelly J, Rairigh R, Hebard AF, Tang W, Stavola M, Zavada JM. Hydrogenation Effects on Magnetic Properties of GaMnP Electrochemical and Solid-State Letters. 6. DOI: 10.1149/1.1612725  0.755
2003 Overberg ME, Thaler GT, Frazier RM, Abernathy CR, Pearton SJ, Rairigh R, Kelly J, Theodoropoulou NA, Hebard AF, Wilson RG, Zavada JM. Magnetic properties of Mn-implanted AlGaP alloys Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 21: 2093-2097. DOI: 10.1116/1.1609473  0.835
2003 Baik KH, Frazier RM, Thaler GT, Abernathy CR, Pearton SJ, Kelly J, Rairigh R, Hebard AF, Tang W, Stavola M, Zavada JM. Effects of hydrogen incorporation in GaMnN Applied Physics Letters. 83: 5458-5460. DOI: 10.1063/1.1637151  0.728
2003 Frazier RM, Thaler GT, Abernathy CR, Pearton SJ, Nakarmi ML, Nam KB, Lin JY, Jiang HX, Kelly J, Rairigh R, Hebard AF, Zavada JM, Wilson RG. Transition metal ion implantation into AlGaN Journal of Applied Physics. 94: 4956-4960. DOI: 10.1063/1.1613375  0.725
2003 Frazier R, Thaler G, Overberg M, Gila B, Abernathy CR, Pearton SJ. Indication of hysteresis in AlMnN Applied Physics Letters. 83: 1758-1760. DOI: 10.1063/1.1604465  0.831
2003 Seo SSA, Kim MW, Lee YS, Noh TW, Park YD, Thaler GT, Overberg ME, Abernathy CR, Pearton SJ. Observation of sphere resonance peak in ferromagnetic GaN:Mn Applied Physics Letters. 82: 4749-4751. DOI: 10.1063/1.1588741  0.752
2003 Frazier RM, Stapleton J, Thaler GT, Abernathy CR, Pearton SJ, Rairigh R, Kelly J, Hebard AF, Nakarmi ML, Nam KB, Lin JY, Jiang HX, Zavada JM, Wilson RG. Properties of Co-, Cr-, or Mn-implanted AlN Journal of Applied Physics. 94: 1592-1596. DOI: 10.1063/1.1586987  0.742
2003 Kim J, Ren F, Thaler GT, Frazier R, Abernathy CR, Pearton SJ, Zavada JM, Wilson RG. Vertical and lateral mobilities in n-(Ga, Mn)N Applied Physics Letters. 82: 1565-1567. DOI: 10.1063/1.1559442  0.722
2003 Overberg ME, Thaler GT, Frazier RM, Abernathy CR, Pearton SJ, Rairigh R, Kelly J, Theodoropoulou NA, Hebard AF, Wilson RG, Zavada JM. Ferromagnetic semiconductors based upon AlGaP Journal of Applied Physics. 93: 7861-7863. DOI: 10.1063/1.1556247  0.818
2003 Pearton SJ, Abernathy CR, Overberg ME, Thaler GT, Norton DP, Theodoropoulou N, Hebard AF, Park YD, Ren F, Kim J, Boatner LA. Wide band gap ferromagnetic semiconductors and oxides Journal of Applied Physics. 93: 1-13. DOI: 10.1063/1.1517164  0.771
2003 Overberg ME, Thaler GT, Frazier RM, Rairigh R, Kelly J, Abernathy CR, Pearton SJ, Hebard AF, Wilson RG, Zavada JM. Ferromagnetism in Mn- and Cr-implanted AlGaP Solid-State Electronics. 47: 1549-1552. DOI: 10.1016/S0038-1101(03)00098-4  0.826
2003 Polyakov A, Smirnov N, Govorkov A, Kim J, Ren F, Thaler G, Overberg M, Frazier R, Abernathy C, Pearton S, Lee C, Chyi J, Wilson R, Zavada J. Comparison of the electrical and luminescent properties of p-layer-up and n-layer-up GaN/InGaN light emitting diodes and the effects of Mn doping of the upper n-layer Solid-State Electronics. 47: 981-987. DOI: 10.1016/S0038-1101(02)00472-0  0.781
2003 Polyakov A, Smirnov N, Govorkov A, Kim J, Ren F, Overberg M, Thaler G, Abernathy C, Pearton S, Lee C, Chyi J, Wilson R, Zavada J. Electrical and electroluminescent properties of GaN light emitting diodes with the contact layer implanted with Mn Solid-State Electronics. 47: 963-968. DOI: 10.1016/S0038-1101(02)00463-X  0.721
2003 Pearton SJ, Park YD, Abernathy CR, Overberg ME, Thaler GT, Kim JH, Ren F, Zavada JM, Wilson RG. Ferromagnetism in GaN and SiC doped with transition metals Thin Solid Films. 447: 493-501. DOI: 10.1016/J.Tsf.2003.07.012  0.724
2003 Pearton SJ, Abernathy CR, Thaler GT, Frazier R, Ren F, Hebard AF, Park YD, Norton DP, Tang W, Stavola M, Zavada JM, Wilson RG. Effects of defects and doping on wide band gap ferromagnetic semiconductors Physica B: Condensed Matter. 340: 39-47. DOI: 10.1016/J.Physb.2003.09.003  0.774
2003 Overberg ME, Thaler GT, Abernathy CR, Theodoropoulou NA, McCarthy KT, Arnason SB, Lee JS, Lim JD, Shim SB, Suh KS, Khim ZG, Park YD, Pearton SJ, Hebard AF. Growth of the dilute magnetic semiconductor GaMnN by molecular-beam epitaxy Journal of Electronic Materials. 32: 298-306. DOI: 10.1007/S11664-003-0148-5  0.746
2003 Pearton SJ, Park YD, Abernathy CR, Overberg ME, Thaler GT, Kim J, Ren F. GaN and other materials for semiconductor spintronics Journal of Electronic Materials. 32: 288-297. DOI: 10.1007/S11664-003-0147-6  0.742
2003 Pearton SJ, Overberg ME, Thaler GT, Abernathy CR, Kim J, Ren F, Theodoropoulou N, Hebard AF, Park YD. Room temperature ferromagnetism in GaMnN and GaMnP Physica Status Solidi (a) Applied Research. 195: 222-227. DOI: 10.1002/Pssa.200306283  0.752
2002 Overberg ME, Thaler GT, Frazier RM, Gila BP, Abernathy CR, Pearton SJ, Theodoropoulou NA, Arnason SB, Hebard AF, Park YD. Ferromagnetic and paramagnetic semiconductors based upon GaN, AlGaN, and GaP Materials Research Society Symposium - Proceedings. 690: 9-14. DOI: 10.1557/Proc-690-F1.5  0.834
2002 Kim J, Ren F, Polyakov AY, Smirnov NB, Govorkov AV, Pashova NY, Thaler GT, Overberg ME, Abernathy CR, Pearton SJ. Optical Absorption and Temperature-Dependent Resistivity of GaMnN Grown by Molecular Beam Epitaxy Electrochemical and Solid-State Letters. 5: G103. DOI: 10.1149/1.1511343  0.738
2002 Overberg ME, Gila BP, Thaler GT, Abernathy CR, Pearton SJ, Theodoropoulou NA, McCarthy KT, Arnason SB, Hebard AF, Chu SNG, Wilson RG, Zavada JM, Park YD. Room temperature magnetism in GaMnP produced by both ion implantation and molecular-beam epitaxy Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 20: 969-973. DOI: 10.1116/1.1477424  0.809
2002 Pearton SJ, Overberg ME, Thaler G, Abernathy CR, Theodoropoulou N, Hebard AF, Chu SNG, Wilson RG, Zavada JM, Polyakov AY, Osinsky AV, Norris PE, Chow PP, Wowchack AM, Van Hove JM, et al. Characterization of high dose Mn, Fe, and Ni implantation into p-GaN Journal of Vacuum Science and Technology, Part a: Vacuum, Surfaces and Films. 20: 721-724. DOI: 10.1116/1.1465449  0.746
2002 Polyakov AY, Govorkov AV, Smirnov NB, Pashkova NY, Thaler GT, Overberg ME, Frazier R, Abernathy CR, Pearton SJ, Kim J, Ren F. Optical and electrical properties of GaMnN films grown by molecular-beam epitaxy Journal of Applied Physics. 92: 4989-4993. DOI: 10.1063/1.1510597  0.798
2002 Polyakov AY, Smirnov NB, Govorkov AV, Pashkova NY, Kim J, Ren F, Overberg ME, Thaler GT, Abernathy CR, Pearton SJ, Wilson RG. Electrical and optical properties of GaN films implanted with Mn and Co Journal of Applied Physics. 92: 3130-3136. DOI: 10.1063/1.1499977  0.732
2002 Kim J, Ren F, Thaler GT, Overberg ME, Abernathy CR, Pearton SJ, Wilson RG. Pt Schottky contacts to n-(Ga,Mn)N Applied Physics Letters. 81: 658-660. DOI: 10.1063/1.1496130  0.705
2002 Thaler GT, Overberg ME, Gila B, Frazier R, Abernathy CR, Pearton SJ, Lee JS, Lee SY, Park YD, Khim ZG, Kim J, Ren F. Magnetic properties of n-GaMnN thin films Applied Physics Letters. 80: 3964-3966. DOI: 10.1063/1.1481533  0.836
2002 Pearton S, Abernathy C, Overberg M, Thaler G, Onstine A, Gila B, Ren F, Lou B, Kim J. New applications advisable for gallium nitride Materials Today. 5: 24-31. DOI: 10.1016/S1369-7021(02)00636-3  0.731
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