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Erin Patrick, Ph.D. - Publications

Affiliations: 
2010 University of Florida, Gainesville, Gainesville, FL, United States 
Area:
Electronics and Electrical Engineering, Biomedical Engineering
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11 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2018 Yang J, Fares C, Ren F, Sharma R, Patrick E, Law ME, Pearton SJ, Kuramata A. Effects of fluorine incorporation into β-Ga2O3 Journal of Applied Physics. 123: 165706. DOI: 10.1063/1.5031001  0.35
2016 Pearton SJ, Ren F, Patrick E, Law ME, Polyakov AY. Review - Ionizing radiation damage effects on GaN devices Ecs Journal of Solid State Science and Technology. 5: Q35-Q60. DOI: 10.1149/2.0251602Jss  0.371
2016 Ahn S, Ren F, Patrick E, Law ME, Pearton SJ, Kuramata A. Deuterium incorporation and diffusivity in plasma-exposed bulk Ga2O3 Applied Physics Letters. 109: 242108. DOI: 10.1063/1.4972265  0.311
2015 Kang TS, Ren F, Gila BP, Pearton SJ, Patrick E, Cheney DJ, Law M, Zhang ML. Investigation of traps in AlGaN/GaN high electron mobility transistors by sub-bandgap optical pumping Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. 33. DOI: 10.1116/1.4931790  0.321
2015 Ahn S, Dong C, Zhu W, Kim BJ, Hwang YH, Ren F, Pearton SJ, Yang G, Kim J, Patrick E, Tracy B, Smith DJ, Kravchenko II. Effect of proton irradiation energy on AlGaN/GaN metal-oxide semiconductor high electron mobility transistors Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. 33. DOI: 10.1116/1.4928730  0.381
2014 Li S, Hwang Y, Hsieh Y, Ren F, Pearton SJ, Patrick E, Law ME. Enhancement of AlGaN/GaN High Electron Mobility Transistor Off-State Drain Breakdown Voltage via Backside Proton Irradiation Ecs Transactions. 61: 117-126. DOI: 10.1116/1.4864070  0.379
2014 Xi Y, Hsieh YL, Hwang YH, Li S, Ren F, Pearton SJ, Patrick E, Law ME, Yang G, Kim HY, Kim J, Baca AG, Allerman AA, Sanchez CA. Effect of 5 MeV proton radiation on DC performance and reliability of circular-shaped AlGaN/GaN high electron mobility transistors Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 32. DOI: 10.1116/1.4836577  0.358
2014 Hwang Y, Li S, Hsieh Y, Ren F, Pearton SJ, Patrick E, Law ME, Smith DJ. Effect of proton irradiation on AlGaN/GaN high electron mobility transistor off-state drain breakdown voltage Applied Physics Letters. 104: 082106. DOI: 10.1063/1.4866858  0.386
2013 Patrick E, Law ME, Liu L, Velez Cuervo C, Xi Y, Ren F, Pearton SJ. Modeling Proton Irradiation in AlGaN/GaN HEMTs: Understanding the Increase of Critical Voltage Ieee Transactions On Nuclear Science. 60: 4103-4108. DOI: 10.1109/Tns.2013.2286115  0.347
2013 Holzworth MR, Rudawski NG, Whiting PG, Pearton SJ, Jones KS, Lu L, Kang TS, Ren F, Patrick E, Law ME. Field-induced defect morphology in Ni-gate AlGaN/GaN high electron mobility transistors Applied Physics Letters. 103. DOI: 10.1063/1.4813535  0.344
2011 Patrick E, Orazem ME, Sanchez JC, Nishida T. Corrosion of tungsten microelectrodes used in neural recording applications. Journal of Neuroscience Methods. 198: 158-71. PMID 21470563 DOI: 10.1016/J.Jneumeth.2011.03.012  0.419
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