☰

Xianfeng Ni, Ph.D. - Publications

Affiliations: 
2010 Engineering Virginia Commonwealth University, Richmond, VA, United States 
Area:
Electronics and Electrical Engineering
Tree Info Similar researchers PubMed Report error

62 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2011 Matulionis A, Liberis J, Matulionienė I, Šermukšnis E, Leach JH, Wu M, Ni X, Morkoç H. Signature of Hot Phonons in Reliability of Nitride Transistors and Signal Delay Acta Physica Polonica A. 119: 225-227. DOI: 10.12693/Aphyspola.119.225  0.676
2011 Gao H, Lee J, Ni X, Leach J, Özgür Ü, Morkoç H. Deep inductively coupled plasma etching of ELO-GaN grown with high fill factor Proceedings of Spie. 7939: 793920. DOI: 10.1117/12.876870  0.658
2011 Foussekis M, Ni X, Morkoç H, Reshchikov MA, Baski AA. Kelvin probe measurements of p-type GaN Proceedings of Spie. 7939. DOI: 10.1117/12.876166  0.462
2011 Leach JH, Biswas N, Paskova T, Preble EA, Evans KR, Wu M, Ni X, Li X, Özgür U, Morkoç H. Effect of substrate offcut on AlGaN/GaN HFET structures on bulk GaN substrates Proceedings of Spie - the International Society For Optical Engineering. 7939. DOI: 10.1117/12.875755  0.681
2011 Liu HY, Li X, Liu S, Ni X, Avrutin V, Izyumskaya N, Özgür Ü, Yankovich AB, Kvit AV, Voyles PM, Reshchikov MA, Morkoç H. Optimization of ZnO:Ga properties for application as a transparent conducting oxide in InGaN-based light-emitting diodes Proceedings of Spie. 7939. DOI: 10.1117/12.875515  0.528
2011 Li X, Ni X, Liu HY, Zhang F, Liu S, Lee J, Avrutin V, Özgür U, Paskova T, Mulholland G, Evans KR, Morkoç H. On the reduction of efficiency loss in polar c -plane and non-polar m -plane InGaN light emitting diodes Physica Status Solidi (C) Current Topics in Solid State Physics. 8: 1560-1563. DOI: 10.1002/Pssc.201000893  0.557
2011 Liu HY, Li X, Liu S, Ni X, Wu M, Avrutin V, Izyumskaya N, Özgür Ü, Yankovich AB, Kvit AV, Voyles PM, Morkoç H. InGaN based light emitting diodes utilizing Ga doped ZnO as a highly transparent contact to p-GaN Physica Status Solidi (C). 8: 1548-1551. DOI: 10.1002/Pssc.201000860  0.66
2011 Monemar B, Paskov P, Pozina G, Hemmingsson C, Bergman P, Lindgren D, Samuelson L, Ni X, Morkoç H, Paskova T, Bi Z, Ohlsson J. Photoluminescence of Mg-doped m-plane GaN grown by MOCVD on bulk GaN substrates Physica Status Solidi a-Applications and Materials Science. 208: 1532-1534. DOI: 10.1002/Pssa.201001036  0.5
2010 Wu M, Leach JH, Ni X, Li X, Xie J, Doǧan S, Özgür U, Morkoç H, Paskova T, Preble E, Evans KR, Lu CZ. InAlN/GaN heterostructure field-effect transistors on Fe-doped semi-insulating GaN substrates Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 28: 908-911. DOI: 10.1116/1.3481138  0.698
2010 Özgür Ü, Ni X, Li X, Lee J, Liu S, Okur S, Avrutin V, Matulionis A, Morkoç H. Ballistic transport in InGaN-based LEDs: impact on efficiency Semiconductor Science and Technology. 26: 014022. DOI: 10.1088/0268-1242/26/1/014022  0.516
2010 Ni X, Li X, Lee J, Liu S, Avrutin V, Özgür U, Morko̧ H, Matulionis A, Paskova T, Mulholland G, Evans KR. InGaN staircase electron injector for reduction of electron overflow in InGaN light emitting diodes Applied Physics Letters. 97. DOI: 10.1063/1.3465658  0.412
2010 Ni X, Li X, Lee J, Liu S, Avrutin V, Özgür Ü, Morkoç H, Matulionis A. Hot electron effects on efficiency degradation in InGaN light emitting diodes and designs to mitigate them Journal of Applied Physics. 108: 033112. DOI: 10.1063/1.3460271  0.507
2010 Leach JH, Zhu CY, Wu M, Ni X, Li X, Xie J, Özgür U, Morko̧ H, Liberis J, Šermukšnis E, Matulionis A, Paskova T, Preble E, Evans KR. Effect of hot phonon lifetime on electron velocity in InAlN/AlN/GaN heterostructure field effect transistors on bulk GaN substrates Applied Physics Letters. 96. DOI: 10.1063/1.3358392  0.661
2010 Leach JH, Wu M, Ni X, Li X, Xie J, Özgür U, Morko̧ H, Paskova T, Preble E, Evans KR, Lu CZ. Carrier velocity in InAlN/AlN/GaN heterostructure field effect transistors on Fe-doped bulk GaN substrates Applied Physics Letters. 96. DOI: 10.1063/1.3358192  0.653
2010 Leach JH, Ni X, Li X, Wu M, Özgür U, Morko̧ H, Zhou L, Cullen DA, Smith DJ, Cheng H, Kurdak C, Meyer JR, Vurgaftman I. Bias dependent two-channel conduction in InAlN/AlN/GaN structures Journal of Applied Physics. 107. DOI: 10.1063/1.3330627  0.648
2010 Zhou L, Leach JH, Ni X, Morko̧ H, Smith DJ. Ti/Al/Ni/Au Ohmic contacts for AlInN/AlN/GaN-based heterojunction field-effect transistors Journal of Applied Physics. 107. DOI: 10.1063/1.3275241  0.67
2010 Zhou L, Cullen D, Leach J, Ni X, Morkoç H, Smith D, McCartney M. Field Mapping and Ohmic Contacts for AlGaN- or AlInN-Based Heterojunction Field Effect Transistors Microscopy and Microanalysis. 16: 570-571. DOI: 10.1017/S1431927610058629  0.615
2010 Ni X, Li X, Lee J, Liu S, Avrutin V, Matulionis A, Özgür Ü, Morkoç H. Pivotal role of ballistic and quasi-ballistic electrons on LED efficiency Superlattices and Microstructures. 48: 133-153. DOI: 10.1016/J.Spmi.2010.05.009  0.527
2010 Li X, Liu H, Ni X, Özgür Ü, Morkoç H. Effect of carrier spillover and Auger recombination on the efficiency droop in InGaN-based blue LEDs Superlattices and Microstructures. 47: 118-122. DOI: 10.1016/J.Spmi.2009.07.022  0.608
2010 Alivov YI, Fan Q, Ni X, Chevtchenko S, Bhat IB, Morko H. N-Al0.15Ga0.85 N/p-6H-SiC heterostructure and based bipolar transistor Microelectronics Reliability. 50: 2090-2092. DOI: 10.1016/J.Microrel.2010.06.016  0.348
2010 Ni X, Li X, Lee J, Liu S, Avrutin V, Özgür U, Morkoç H, Matulionis A, Paskova T, Mulholland G, Evans KR. The effect of ballistic and quasi-ballistic electrons on the efficiency droop of InGaN light emitting diodes Physica Status Solidi - Rapid Research Letters. 4: 194-196. DOI: 10.1002/Pssr.201004147  0.56
2010 Leach JH, Ni X, Lee J, Özgür Ü, Matulionis A, Morkoç H. Inside Back Cover (Phys. Status Solidi A 5/2010) Physica Status Solidi (a). 207: n/a-n/a. DOI: 10.1002/Pssa.201090012  0.564
2010 Li X, Liu HY, Liu S, Ni X, Wu M, Avrutin V, Izyumskaya N, Özgür Ü, Morkoç H. InGaN based light emitting diodes with Ga doped ZnO as transparent conducting oxide Physica Status Solidi (a). 207: 1993-1996. DOI: 10.1002/Pssa.201026053  0.654
2010 Leach JH, Wu M, Ni X, Li X, Özgür U, Morkoç H, Liberis J, Šermukšnis E, Matulionis A, Cheng H, Kurdak C, Moon YT. Stress test measurements of lattice-matched InAlN/AlN/GaN HFET structures applications and materials Physica Status Solidi (a) Applications and Materials Science. 207: 1345-1347. DOI: 10.1002/Pssa.200983556  0.691
2010 Leach JH, Ni X, Lee J, ÖZgür U, Matulionis A, Morkoç H. New twists in LEDs and HFETs based on nitride semiconductors Physica Status Solidi (a) Applications and Materials Science. 207: 1091-1100. DOI: 10.1002/Pssa.200983107  0.686
2010 Leach JH, Wu M, Ni X, Li X, Özgür U, Morkoç H. Effect of lattice mismatch on gate lag in high quality InAlN/AlN/GaN HFET structures Physica Status Solidi (a) Applications and Materials Science. 207: 211-216. DOI: 10.1002/Pssa.200925362  0.68
2009 Ni X, Li X, Liu H, Izyumskaya N, Avrutin V, Özgür Ü, Morkoç H, Paskova T, Mullholland G, Evans KR. On the Light Emission in GaN Based Heterostructures at High Injection Mrs Proceedings. 1202. DOI: 10.1557/Proc-1202-I02-06  0.673
2009 Leach JH, Zhu CY, Wu M, Ni X, Li X, Xie J, Özgür U, Morko̧ H, Liberis J, Šermukšnis E, Matulionis A, Cheng H, Kurdak C. Degradation in InAlN/GaN-based heterostructure field effect transistors: Role of hot phonons Applied Physics Letters. 95. DOI: 10.1063/1.3271183  0.727
2009 Lee J, Li X, Ni X, Özgür U, Morko̧ H, Paskova T, Mulholland G, Evans KR. On carrier spillover in c- and m-plane InGaN light emitting diodes Applied Physics Letters. 95. DOI: 10.1063/1.3266833  0.409
2009 Matulionis A, Liberis J, Matulionien I, Ramonas M, Šermukšnis E, Leach JH, Wu M, Ni X, Li X, Morko̧ H. Plasmon-enhanced heat dissipation in GaN-based two-dimensional channels Applied Physics Letters. 95. DOI: 10.1063/1.3261748  0.624
2009 Li X, Ni X, Lee J, Wu M, Özgür U, Morko̧ H, Paskova T, Mulholland G, Evans KR. Efficiency retention at high current injection levels in m -plane InGaN light emitting diodes Applied Physics Letters. 95. DOI: 10.1063/1.3236538  0.396
2009 Ni X, Wu M, Lee J, Li X, Baski AA, Özgür Ü, Morkoç H. Nonpolar m-plane GaN on patterned Si(112) substrates by metalorganic chemical vapor deposition Applied Physics Letters. 95: 111102. DOI: 10.1063/1.3225157  0.487
2009 Ni X, Lee J, Wu M, Li X, Shimada R, Özgür U, Baski AA, Morko̧ H, Paskova T, Mulholland G, Evans KR. Internal quantum efficiency of c -plane InGaN and m -plane InGaN on Si and GaN Applied Physics Letters. 95. DOI: 10.1063/1.3224192  0.365
2009 Zhou L, Ni X, Özgür Ü, Morkoç H, Smith DJ. High-resolution imaging of 1:1 [0001] ordered a-plane Al0.3Ga0.7N Journal of Crystal Growth. 311: 4162-4166. DOI: 10.1016/J.Jcrysgro.2009.07.016  0.542
2009 Zhou L, Ni X, Özgür Ü, Morkoç H, Devaty R, Choyke W, Smith DJ. Atomic structure of the m-plane AlN/SiC interface Journal of Crystal Growth. 311: 1456-1459. DOI: 10.1016/J.Jcrysgro.2008.12.047  0.499
2009 Ni X, Shimada R, Kang TD, Leach JH, Özgür U, Morkoç H. GaN-based vertical cavities with crack-free high-reflectivity patterned AlGaN/GaN distributed Bragg reflectors Physica Status Solidi (a) Applications and Materials Science. 206: 367-370. DOI: 10.1002/Pssa.200824377  0.644
2008 Ni X, Özgür Ü, Chevtchenko S, Nie J, Morkoç H, Devaty RP, Choyke WJ. Epitaxial Lateral Overgrowth of (1-100) m-Plane GaN on m-Plane 6H-SiC by Metalorganic Chemical Vapor Deposition Materials Science Forum. 1273-1276. DOI: 10.4028/Www.Scientific.Net/Msf.600-603.1273  0.521
2008 Ni X, Fan Q, Shimada R, Özgür Ü, Morkoç H. Reduction of efficiency droop in InGaN light emitting diodes by coupled quantum wells Applied Physics Letters. 93: 171113. DOI: 10.1063/1.3012388  0.533
2008 Xie J, Ni X, Fan Q, Shimada R, Özgür Ü, Morkoç H. On the efficiency droop in InGaN multiple quantum well blue light emitting diodes and its reduction with p-doped quantum well barriers Applied Physics Letters. 93: 121107. DOI: 10.1063/1.2988324  0.684
2008 Steinke IP, Ruden PP, Ni X, Morko̧ H, Son KA. Current versus voltage characteristics of GaNAlGaNGaN double heterostructures with varying AlGaN thickness and composition under hydrostatic pressure Journal of Applied Physics. 103. DOI: 10.1063/1.2844484  0.396
2007 Steinke I, Kauser MZ, Ruden PP, Ni X, Morkoc H, Son K. Hydrostatic Pressure Studies of GaN/AlGaN/GaN Heterostructure Devices with Varying AlGaN Thickness and Composition Mrs Proceedings. 994. DOI: 10.1557/Proc-0994-F11-19  0.519
2007 Xie J, Leach JH, Ni X, Wu M, Shimada R, Özgür U, Morko̧ H. Electron mobility in InGaN channel heterostructure field effect transistor structures with different barriers Applied Physics Letters. 91. DOI: 10.1063/1.2824461  0.645
2007 Xie J, Ni X, Wu M, Leach JH, Özgür U, Morko̧ H. High electron mobility in nearly lattice-matched AlInNAlNGaN heterostructure field effect transistors Applied Physics Letters. 91. DOI: 10.1063/1.2794419  0.723
2007 Ni X, Özgür Ü, Morkoç H, Liliental-Weber Z, Everitt HO. Epitaxial lateral overgrowth of a-plane GaN by metalorganic chemical vapor deposition Journal of Applied Physics. 102: 053506. DOI: 10.1063/1.2773692  0.52
2007 Biyikli N, Ni X, Fu Y, Xie J, Morkoç H, Cheng H, Kurdak Ç, Vurgaftman I, Meyer J. Magnetotransport properties of AlxGa1−xN∕AlN∕GaN heterostructures grown on epitaxial lateral overgrown GaN templates Journal of Applied Physics. 101: 113710. DOI: 10.1063/1.2745253  0.579
2007 Chevtchenko SA, Reshchikov MA, Fan Q, Ni X, Moon YT, Baski AA, Morkoç H. Study of SiNx and SiO2 passivation of GaN surfaces Journal of Applied Physics. 101: 113709. DOI: 10.1063/1.2740324  0.528
2007 Ni X, Özgür Ü, Baski AA, Morkoç H, Zhou L, Smith DJ, Tran CA. Epitaxial lateral overgrowth of (112¯2) semipolar GaN on (11¯00) m-plane sapphire by metalorganic chemical vapor deposition Applied Physics Letters. 90: 182109. DOI: 10.1063/1.2735558  0.523
2007 Xie J, Özgür U, Fu Y, Ni X, Morko̧ H, Inoki CK, Kuan TS, Foreman JV, Everitt HO. Low dislocation densities and long carrier lifetimes in GaN thin films grown on a Si Nx nanonetwork Applied Physics Letters. 90. DOI: 10.1063/1.2433754  0.44
2007 Moore JC, Kasliwal V, Baski AA, Ni X, Özgür Ü, Morkoç H. Local electronic and optical behaviors of a-plane GaN grown via epitaxial lateral overgrowth Applied Physics Letters. 90: 011913. DOI: 10.1063/1.2429901  0.515
2007 Liliental-Weber Z, Ni X, Morkoc H. Structural perfection of laterally overgrown GaN layers grown in polar- and non-polar directions Journal of Materials Science: Materials in Electronics. 19: 815-820. DOI: 10.1007/S10854-007-9472-5  0.489
2006 Liliental-Weber Z, Ni X, Morkoc H. Structural Defects in Laterally Overgrown GaN Layers Grown on Non-polar Substrates Mrs Proceedings. 955. DOI: 10.1557/Proc-0955-I11-04  0.526
2006 Ni X, Özgür Ü, Fu Y, Biyikli N, Morkoç H, Liliental-Weber Z. Defect reduction in (11-20) a-plane GaN by two-step epitaxial lateral overgrowth Mrs Proceedings. 955. DOI: 10.1557/Proc-0955-I07-51  0.537
2006 Chevtchenko SA, Xie J, Fu Y, Ni X, Morkoç H. Deep centers in GaN layers grown on epitaxial lateral overgrowth templates by metalorganic chemical vapor deposition Mrs Proceedings. 955. DOI: 10.1557/Proc-0955-I07-48  0.532
2006 Fan Q, Chevtchenko S, Ni X, Cho S, Yun F, Morkoç H. Reactive ion etch damage on GaN and its recovery Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 24: 1197. DOI: 10.1116/1.2192542  0.473
2006 Özgür Ü, Ni X, Fu Y, Morkoç H, Everitt HO. Near-field scanning optical microscopy and time-resolved optical characterization of epitaxial lateral overgrown c-plane and a-plane GaN Applied Physics Letters. 89: 262117. DOI: 10.1063/1.2424677  0.513
2006 Ni X, Özgür Ü, Fu Y, Biyikli N, Xie J, Baski AA, Morkoç H, Liliental-Weber Z. Defect reduction in (112¯0) a-plane GaN by two-stage epitaxial lateral overgrowth Applied Physics Letters. 89: 262105. DOI: 10.1063/1.2423328  0.522
2006 Biyikli N, Özgür Ü, Ni X, Fu Y, Morkoç H, Kurdak Ç. Illumination and annealing characteristics of two-dimensional electron gas systems in metal-organic vapor-phase epitaxy grown AlxGa1−xN∕AlN∕GaN heterostructures Journal of Applied Physics. 100: 103702. DOI: 10.1063/1.2386950  0.52
2006 Xie J, Fu Y, Ni X, Chevtchenko S, Morkoç H. I-V characteristics of Au∕Ni Schottky diodes on GaN with SiNx nanonetwork Applied Physics Letters. 89: 152108. DOI: 10.1063/1.2359294  0.665
2006 Moon YT, Liu C, Xie J, Ni X, Fu Y, Morkoç H, Zhou L, Smith DJ. In situ pendeoepitaxy of GaN using heteroepitaxial AlGaN∕GaN cracks Applied Physics Letters. 89: 024103. DOI: 10.1063/1.2219093  0.486
2006 Chevtchenko S, Ni X, Fan Q, Baski AA, Morkoç H. Surface band bending of a-plane GaN studied by scanning Kelvin probe microscopy Applied Physics Letters. 88: 122104. DOI: 10.1063/1.2188589  0.47
2006 Moon Y, Xie J, Liu C, Fu Y, Ni X, Biyikli N, Zhu K, Yun F, Morkoç H, Sagar A, Feenstra R. A study of the morphology of GaN seed layers on in situ deposited SixNy and its effect on properties of overgrown GaN epilayers Journal of Crystal Growth. 291: 301-308. DOI: 10.1016/J.Jcrysgro.2006.03.010  0.554
2006 Ni X, Fu Y, Moon Y, Biyikli N, Morkoç H. Optimization of a-plane GaN growth by MOCVD on r-plane sapphire Journal of Crystal Growth. 290: 166-170. DOI: 10.1016/J.Jcrysgro.2006.01.008  0.513
Show low-probability matches.