Year |
Citation |
Score |
2011 |
Matulionis A, Liberis J, Matulionienė I, Šermukšnis E, Leach JH, Wu M, Ni X, Morkoç H. Signature of Hot Phonons in Reliability of Nitride Transistors and Signal Delay Acta Physica Polonica A. 119: 225-227. DOI: 10.12693/Aphyspola.119.225 |
0.676 |
|
2011 |
Gao H, Lee J, Ni X, Leach J, Özgür Ü, Morkoç H. Deep inductively coupled plasma etching of ELO-GaN grown with high fill factor Proceedings of Spie. 7939: 793920. DOI: 10.1117/12.876870 |
0.658 |
|
2011 |
Foussekis M, Ni X, Morkoç H, Reshchikov MA, Baski AA. Kelvin probe measurements of p-type GaN Proceedings of Spie. 7939. DOI: 10.1117/12.876166 |
0.462 |
|
2011 |
Leach JH, Biswas N, Paskova T, Preble EA, Evans KR, Wu M, Ni X, Li X, Özgür U, Morkoç H. Effect of substrate offcut on AlGaN/GaN HFET structures on bulk GaN substrates Proceedings of Spie - the International Society For Optical Engineering. 7939. DOI: 10.1117/12.875755 |
0.681 |
|
2011 |
Liu HY, Li X, Liu S, Ni X, Avrutin V, Izyumskaya N, Özgür Ü, Yankovich AB, Kvit AV, Voyles PM, Reshchikov MA, Morkoç H. Optimization of ZnO:Ga properties for application as a transparent conducting oxide in InGaN-based light-emitting diodes Proceedings of Spie. 7939. DOI: 10.1117/12.875515 |
0.528 |
|
2011 |
Li X, Ni X, Liu HY, Zhang F, Liu S, Lee J, Avrutin V, Özgür U, Paskova T, Mulholland G, Evans KR, Morkoç H. On the reduction of efficiency loss in polar c -plane and non-polar m -plane InGaN light emitting diodes Physica Status Solidi (C) Current Topics in Solid State Physics. 8: 1560-1563. DOI: 10.1002/Pssc.201000893 |
0.557 |
|
2011 |
Liu HY, Li X, Liu S, Ni X, Wu M, Avrutin V, Izyumskaya N, Özgür Ü, Yankovich AB, Kvit AV, Voyles PM, Morkoç H. InGaN based light emitting diodes utilizing Ga doped ZnO as a highly transparent contact to p-GaN Physica Status Solidi (C). 8: 1548-1551. DOI: 10.1002/Pssc.201000860 |
0.66 |
|
2011 |
Monemar B, Paskov P, Pozina G, Hemmingsson C, Bergman P, Lindgren D, Samuelson L, Ni X, Morkoç H, Paskova T, Bi Z, Ohlsson J. Photoluminescence of Mg-doped m-plane GaN grown by MOCVD on bulk GaN substrates Physica Status Solidi a-Applications and Materials Science. 208: 1532-1534. DOI: 10.1002/Pssa.201001036 |
0.5 |
|
2010 |
Wu M, Leach JH, Ni X, Li X, Xie J, Doǧan S, Özgür U, Morkoç H, Paskova T, Preble E, Evans KR, Lu CZ. InAlN/GaN heterostructure field-effect transistors on Fe-doped semi-insulating GaN substrates Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 28: 908-911. DOI: 10.1116/1.3481138 |
0.698 |
|
2010 |
Özgür Ü, Ni X, Li X, Lee J, Liu S, Okur S, Avrutin V, Matulionis A, Morkoç H. Ballistic transport in InGaN-based LEDs: impact on efficiency Semiconductor Science and Technology. 26: 014022. DOI: 10.1088/0268-1242/26/1/014022 |
0.516 |
|
2010 |
Ni X, Li X, Lee J, Liu S, Avrutin V, Özgür U, Morko̧ H, Matulionis A, Paskova T, Mulholland G, Evans KR. InGaN staircase electron injector for reduction of electron overflow in InGaN light emitting diodes Applied Physics Letters. 97. DOI: 10.1063/1.3465658 |
0.412 |
|
2010 |
Ni X, Li X, Lee J, Liu S, Avrutin V, Özgür Ü, Morkoç H, Matulionis A. Hot electron effects on efficiency degradation in InGaN light emitting diodes and designs to mitigate them Journal of Applied Physics. 108: 033112. DOI: 10.1063/1.3460271 |
0.507 |
|
2010 |
Leach JH, Zhu CY, Wu M, Ni X, Li X, Xie J, Özgür U, Morko̧ H, Liberis J, Šermukšnis E, Matulionis A, Paskova T, Preble E, Evans KR. Effect of hot phonon lifetime on electron velocity in InAlN/AlN/GaN heterostructure field effect transistors on bulk GaN substrates Applied Physics Letters. 96. DOI: 10.1063/1.3358392 |
0.661 |
|
2010 |
Leach JH, Wu M, Ni X, Li X, Xie J, Özgür U, Morko̧ H, Paskova T, Preble E, Evans KR, Lu CZ. Carrier velocity in InAlN/AlN/GaN heterostructure field effect transistors on Fe-doped bulk GaN substrates Applied Physics Letters. 96. DOI: 10.1063/1.3358192 |
0.653 |
|
2010 |
Leach JH, Ni X, Li X, Wu M, Özgür U, Morko̧ H, Zhou L, Cullen DA, Smith DJ, Cheng H, Kurdak C, Meyer JR, Vurgaftman I. Bias dependent two-channel conduction in InAlN/AlN/GaN structures Journal of Applied Physics. 107. DOI: 10.1063/1.3330627 |
0.648 |
|
2010 |
Zhou L, Leach JH, Ni X, Morko̧ H, Smith DJ. Ti/Al/Ni/Au Ohmic contacts for AlInN/AlN/GaN-based heterojunction field-effect transistors Journal of Applied Physics. 107. DOI: 10.1063/1.3275241 |
0.67 |
|
2010 |
Zhou L, Cullen D, Leach J, Ni X, Morkoç H, Smith D, McCartney M. Field Mapping and Ohmic Contacts for AlGaN- or AlInN-Based Heterojunction Field Effect Transistors Microscopy and Microanalysis. 16: 570-571. DOI: 10.1017/S1431927610058629 |
0.615 |
|
2010 |
Ni X, Li X, Lee J, Liu S, Avrutin V, Matulionis A, Özgür Ü, Morkoç H. Pivotal role of ballistic and quasi-ballistic electrons on LED efficiency Superlattices and Microstructures. 48: 133-153. DOI: 10.1016/J.Spmi.2010.05.009 |
0.527 |
|
2010 |
Li X, Liu H, Ni X, Özgür Ü, Morkoç H. Effect of carrier spillover and Auger recombination on the efficiency droop in InGaN-based blue LEDs Superlattices and Microstructures. 47: 118-122. DOI: 10.1016/J.Spmi.2009.07.022 |
0.608 |
|
2010 |
Alivov YI, Fan Q, Ni X, Chevtchenko S, Bhat IB, Morko H. N-Al0.15Ga0.85 N/p-6H-SiC heterostructure and based bipolar transistor Microelectronics Reliability. 50: 2090-2092. DOI: 10.1016/J.Microrel.2010.06.016 |
0.348 |
|
2010 |
Ni X, Li X, Lee J, Liu S, Avrutin V, Özgür U, Morkoç H, Matulionis A, Paskova T, Mulholland G, Evans KR. The effect of ballistic and quasi-ballistic electrons on the efficiency droop of InGaN light emitting diodes Physica Status Solidi - Rapid Research Letters. 4: 194-196. DOI: 10.1002/Pssr.201004147 |
0.56 |
|
2010 |
Leach JH, Ni X, Lee J, Özgür Ü, Matulionis A, Morkoç H. Inside Back Cover (Phys. Status Solidi A 5/2010) Physica Status Solidi (a). 207: n/a-n/a. DOI: 10.1002/Pssa.201090012 |
0.564 |
|
2010 |
Li X, Liu HY, Liu S, Ni X, Wu M, Avrutin V, Izyumskaya N, Özgür Ü, Morkoç H. InGaN based light emitting diodes with Ga doped ZnO as transparent conducting oxide Physica Status Solidi (a). 207: 1993-1996. DOI: 10.1002/Pssa.201026053 |
0.654 |
|
2010 |
Leach JH, Wu M, Ni X, Li X, Özgür U, Morkoç H, Liberis J, Šermukšnis E, Matulionis A, Cheng H, Kurdak C, Moon YT. Stress test measurements of lattice-matched InAlN/AlN/GaN HFET structures applications and materials Physica Status Solidi (a) Applications and Materials Science. 207: 1345-1347. DOI: 10.1002/Pssa.200983556 |
0.691 |
|
2010 |
Leach JH, Ni X, Lee J, ÖZgür U, Matulionis A, Morkoç H. New twists in LEDs and HFETs based on nitride semiconductors Physica Status Solidi (a) Applications and Materials Science. 207: 1091-1100. DOI: 10.1002/Pssa.200983107 |
0.686 |
|
2010 |
Leach JH, Wu M, Ni X, Li X, Özgür U, Morkoç H. Effect of lattice mismatch on gate lag in high quality InAlN/AlN/GaN HFET structures Physica Status Solidi (a) Applications and Materials Science. 207: 211-216. DOI: 10.1002/Pssa.200925362 |
0.68 |
|
2009 |
Ni X, Li X, Liu H, Izyumskaya N, Avrutin V, Özgür Ü, Morkoç H, Paskova T, Mullholland G, Evans KR. On the Light Emission in GaN Based Heterostructures at High Injection Mrs Proceedings. 1202. DOI: 10.1557/Proc-1202-I02-06 |
0.673 |
|
2009 |
Leach JH, Zhu CY, Wu M, Ni X, Li X, Xie J, Özgür U, Morko̧ H, Liberis J, Šermukšnis E, Matulionis A, Cheng H, Kurdak C. Degradation in InAlN/GaN-based heterostructure field effect transistors: Role of hot phonons Applied Physics Letters. 95. DOI: 10.1063/1.3271183 |
0.727 |
|
2009 |
Lee J, Li X, Ni X, Özgür U, Morko̧ H, Paskova T, Mulholland G, Evans KR. On carrier spillover in c- and m-plane InGaN light emitting diodes Applied Physics Letters. 95. DOI: 10.1063/1.3266833 |
0.409 |
|
2009 |
Matulionis A, Liberis J, Matulionien I, Ramonas M, Šermukšnis E, Leach JH, Wu M, Ni X, Li X, Morko̧ H. Plasmon-enhanced heat dissipation in GaN-based two-dimensional channels Applied Physics Letters. 95. DOI: 10.1063/1.3261748 |
0.624 |
|
2009 |
Li X, Ni X, Lee J, Wu M, Özgür U, Morko̧ H, Paskova T, Mulholland G, Evans KR. Efficiency retention at high current injection levels in m -plane InGaN light emitting diodes Applied Physics Letters. 95. DOI: 10.1063/1.3236538 |
0.396 |
|
2009 |
Ni X, Wu M, Lee J, Li X, Baski AA, Özgür Ü, Morkoç H. Nonpolar m-plane GaN on patterned Si(112) substrates by metalorganic chemical vapor deposition Applied Physics Letters. 95: 111102. DOI: 10.1063/1.3225157 |
0.487 |
|
2009 |
Ni X, Lee J, Wu M, Li X, Shimada R, Özgür U, Baski AA, Morko̧ H, Paskova T, Mulholland G, Evans KR. Internal quantum efficiency of c -plane InGaN and m -plane InGaN on Si and GaN Applied Physics Letters. 95. DOI: 10.1063/1.3224192 |
0.365 |
|
2009 |
Zhou L, Ni X, Özgür Ü, Morkoç H, Smith DJ. High-resolution imaging of 1:1 [0001] ordered a-plane Al0.3Ga0.7N Journal of Crystal Growth. 311: 4162-4166. DOI: 10.1016/J.Jcrysgro.2009.07.016 |
0.542 |
|
2009 |
Zhou L, Ni X, Özgür Ü, Morkoç H, Devaty R, Choyke W, Smith DJ. Atomic structure of the m-plane AlN/SiC interface Journal of Crystal Growth. 311: 1456-1459. DOI: 10.1016/J.Jcrysgro.2008.12.047 |
0.499 |
|
2009 |
Ni X, Shimada R, Kang TD, Leach JH, Özgür U, Morkoç H. GaN-based vertical cavities with crack-free high-reflectivity patterned AlGaN/GaN distributed Bragg reflectors Physica Status Solidi (a) Applications and Materials Science. 206: 367-370. DOI: 10.1002/Pssa.200824377 |
0.644 |
|
2008 |
Ni X, Özgür Ü, Chevtchenko S, Nie J, Morkoç H, Devaty RP, Choyke WJ. Epitaxial Lateral Overgrowth of (1-100) m-Plane GaN on m-Plane 6H-SiC by Metalorganic Chemical Vapor Deposition Materials Science Forum. 1273-1276. DOI: 10.4028/Www.Scientific.Net/Msf.600-603.1273 |
0.521 |
|
2008 |
Ni X, Fan Q, Shimada R, Özgür Ü, Morkoç H. Reduction of efficiency droop in InGaN light emitting diodes by coupled quantum wells Applied Physics Letters. 93: 171113. DOI: 10.1063/1.3012388 |
0.533 |
|
2008 |
Xie J, Ni X, Fan Q, Shimada R, Özgür Ü, Morkoç H. On the efficiency droop in InGaN multiple quantum well blue light emitting diodes and its reduction with p-doped quantum well barriers Applied Physics Letters. 93: 121107. DOI: 10.1063/1.2988324 |
0.684 |
|
2008 |
Steinke IP, Ruden PP, Ni X, Morko̧ H, Son KA. Current versus voltage characteristics of GaNAlGaNGaN double heterostructures with varying AlGaN thickness and composition under hydrostatic pressure Journal of Applied Physics. 103. DOI: 10.1063/1.2844484 |
0.396 |
|
2007 |
Steinke I, Kauser MZ, Ruden PP, Ni X, Morkoc H, Son K. Hydrostatic Pressure Studies of GaN/AlGaN/GaN Heterostructure Devices with Varying AlGaN Thickness and Composition Mrs Proceedings. 994. DOI: 10.1557/Proc-0994-F11-19 |
0.519 |
|
2007 |
Xie J, Leach JH, Ni X, Wu M, Shimada R, Özgür U, Morko̧ H. Electron mobility in InGaN channel heterostructure field effect transistor structures with different barriers Applied Physics Letters. 91. DOI: 10.1063/1.2824461 |
0.645 |
|
2007 |
Xie J, Ni X, Wu M, Leach JH, Özgür U, Morko̧ H. High electron mobility in nearly lattice-matched AlInNAlNGaN heterostructure field effect transistors Applied Physics Letters. 91. DOI: 10.1063/1.2794419 |
0.723 |
|
2007 |
Ni X, Özgür Ü, Morkoç H, Liliental-Weber Z, Everitt HO. Epitaxial lateral overgrowth of a-plane GaN by metalorganic chemical vapor deposition Journal of Applied Physics. 102: 053506. DOI: 10.1063/1.2773692 |
0.52 |
|
2007 |
Biyikli N, Ni X, Fu Y, Xie J, Morkoç H, Cheng H, Kurdak Ç, Vurgaftman I, Meyer J. Magnetotransport properties of AlxGa1−xN∕AlN∕GaN heterostructures grown on epitaxial lateral overgrown GaN templates Journal of Applied Physics. 101: 113710. DOI: 10.1063/1.2745253 |
0.579 |
|
2007 |
Chevtchenko SA, Reshchikov MA, Fan Q, Ni X, Moon YT, Baski AA, Morkoç H. Study of SiNx and SiO2 passivation of GaN surfaces Journal of Applied Physics. 101: 113709. DOI: 10.1063/1.2740324 |
0.528 |
|
2007 |
Ni X, Özgür Ü, Baski AA, Morkoç H, Zhou L, Smith DJ, Tran CA. Epitaxial lateral overgrowth of (112¯2) semipolar GaN on (11¯00) m-plane sapphire by metalorganic chemical vapor deposition Applied Physics Letters. 90: 182109. DOI: 10.1063/1.2735558 |
0.523 |
|
2007 |
Xie J, Özgür U, Fu Y, Ni X, Morko̧ H, Inoki CK, Kuan TS, Foreman JV, Everitt HO. Low dislocation densities and long carrier lifetimes in GaN thin films grown on a Si Nx nanonetwork Applied Physics Letters. 90. DOI: 10.1063/1.2433754 |
0.44 |
|
2007 |
Moore JC, Kasliwal V, Baski AA, Ni X, Özgür Ü, Morkoç H. Local electronic and optical behaviors of a-plane GaN grown via epitaxial lateral overgrowth Applied Physics Letters. 90: 011913. DOI: 10.1063/1.2429901 |
0.515 |
|
2007 |
Liliental-Weber Z, Ni X, Morkoc H. Structural perfection of laterally overgrown GaN layers grown in polar- and non-polar directions Journal of Materials Science: Materials in Electronics. 19: 815-820. DOI: 10.1007/S10854-007-9472-5 |
0.489 |
|
2006 |
Liliental-Weber Z, Ni X, Morkoc H. Structural Defects in Laterally Overgrown GaN Layers Grown on Non-polar Substrates Mrs Proceedings. 955. DOI: 10.1557/Proc-0955-I11-04 |
0.526 |
|
2006 |
Ni X, Özgür Ü, Fu Y, Biyikli N, Morkoç H, Liliental-Weber Z. Defect reduction in (11-20) a-plane GaN by two-step epitaxial lateral overgrowth Mrs Proceedings. 955. DOI: 10.1557/Proc-0955-I07-51 |
0.537 |
|
2006 |
Chevtchenko SA, Xie J, Fu Y, Ni X, Morkoç H. Deep centers in GaN layers grown on epitaxial lateral overgrowth templates by metalorganic chemical vapor deposition Mrs Proceedings. 955. DOI: 10.1557/Proc-0955-I07-48 |
0.532 |
|
2006 |
Fan Q, Chevtchenko S, Ni X, Cho S, Yun F, Morkoç H. Reactive ion etch damage on GaN and its recovery Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 24: 1197. DOI: 10.1116/1.2192542 |
0.473 |
|
2006 |
Özgür Ü, Ni X, Fu Y, Morkoç H, Everitt HO. Near-field scanning optical microscopy and time-resolved optical characterization of epitaxial lateral overgrown c-plane and a-plane GaN Applied Physics Letters. 89: 262117. DOI: 10.1063/1.2424677 |
0.513 |
|
2006 |
Ni X, Özgür Ü, Fu Y, Biyikli N, Xie J, Baski AA, Morkoç H, Liliental-Weber Z. Defect reduction in (112¯0) a-plane GaN by two-stage epitaxial lateral overgrowth Applied Physics Letters. 89: 262105. DOI: 10.1063/1.2423328 |
0.522 |
|
2006 |
Biyikli N, Özgür Ü, Ni X, Fu Y, Morkoç H, Kurdak Ç. Illumination and annealing characteristics of two-dimensional electron gas systems in metal-organic vapor-phase epitaxy grown AlxGa1−xN∕AlN∕GaN heterostructures Journal of Applied Physics. 100: 103702. DOI: 10.1063/1.2386950 |
0.52 |
|
2006 |
Xie J, Fu Y, Ni X, Chevtchenko S, Morkoç H. I-V characteristics of Au∕Ni Schottky diodes on GaN with SiNx nanonetwork Applied Physics Letters. 89: 152108. DOI: 10.1063/1.2359294 |
0.665 |
|
2006 |
Moon YT, Liu C, Xie J, Ni X, Fu Y, Morkoç H, Zhou L, Smith DJ. In situ pendeoepitaxy of GaN using heteroepitaxial AlGaN∕GaN cracks Applied Physics Letters. 89: 024103. DOI: 10.1063/1.2219093 |
0.486 |
|
2006 |
Chevtchenko S, Ni X, Fan Q, Baski AA, Morkoç H. Surface band bending of a-plane GaN studied by scanning Kelvin probe microscopy Applied Physics Letters. 88: 122104. DOI: 10.1063/1.2188589 |
0.47 |
|
2006 |
Moon Y, Xie J, Liu C, Fu Y, Ni X, Biyikli N, Zhu K, Yun F, Morkoç H, Sagar A, Feenstra R. A study of the morphology of GaN seed layers on in situ deposited SixNy and its effect on properties of overgrown GaN epilayers Journal of Crystal Growth. 291: 301-308. DOI: 10.1016/J.Jcrysgro.2006.03.010 |
0.554 |
|
2006 |
Ni X, Fu Y, Moon Y, Biyikli N, Morkoç H. Optimization of a-plane GaN growth by MOCVD on r-plane sapphire Journal of Crystal Growth. 290: 166-170. DOI: 10.1016/J.Jcrysgro.2006.01.008 |
0.513 |
|
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