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Yong Chen, Ph.D. - Publications

Affiliations: 
1996 Materials Science Division, Lawrence Berkeley Laboratory University of California, Berkeley, Berkeley, CA, United States 
 1996-2005 Hewlett-Packard Laboratories 
 2005- Biomedical Engineering Inter-departmental Program and Department of Mechanical and Aerospace Engineering University of California, Los Angeles, Los Angeles, CA 
Website:
http://chen.seas.ucla.edu/index.html
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10 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2008 Lai Q, Li Z, Zhang L, Li X, Stickle WF, Zhu Z, Gu Z, Kamins TI, Williams RS, Chen Y. An organic/Si nanowire hybrid field configurable transistor. Nano Letters. 8: 876-80. PMID 18266332 DOI: 10.1021/Nl073112Y  0.308
2002 Chen Y, Ohlberg DAA, Williams RS. Nanowires of four epitaxial hexagonal silicides grown on Si(001) Journal of Applied Physics. 91: 3213-3218. DOI: 10.1063/1.1428807  0.301
2001 Chen Y, Ohlberg DA, Stanley Williams R. Epitaxial growth of erbium silicide nanowires on silicon(001) Materials Science and Engineering: B. 87: 222-226. DOI: 10.1016/S0921-5107(01)00734-6  0.314
2000 Chen Y, Ohlberg DAA, Medeiros-Ribeiro G, Chang YA, Williams RS. Self-assembled growth of epitaxial erbium disilicide nanowires on silicon (001) Applied Physics Letters. 76: 4004-4006. DOI: 10.1063/1.126848  0.302
1997 Liliental-Weber Z, Chen Y, Ruvimov S, Washburn J. Formation mechanism of nanotubes in GaN Physical Review Letters. 79: 2835-2838. DOI: 10.1103/Physrevlett.79.2835  0.483
1996 Chen Y, Washburn J. Structural Transition in Large-Lattice-Mismatch Heteroepitaxy Physical Review Letters. 77: 4046-4049. PMID 10062374 DOI: 10.1103/Physrevlett.77.4046  0.481
1996 Liliental-Weber Z, Ruvimov S, Suski T, Ager JW, Swider W, Chen Y, Kisielowski C, Washburn J, Akasaki I, Amano H, Kuo C, Imler W. Effect of Si Doping on The Structure of Gan Mrs Proceedings. 423: 487. DOI: 10.1557/Proc-423-487  0.495
1996 Liliental-Weber Z, Kisielowski C, Ruvimov S, Chen Y, Washburn J, Grzegory I, Bockowski M, Jun J, Porowski S. Structural characterization of bulk GaN crystals grown under high hydrostatic pressure Journal of Electronic Materials. 25: 1545-1550. DOI: 10.1007/Bf02655397  0.514
1995 Liliental-Weber Z, Ruvimov S, Kisielowski C, Chen Y, Swider W, Washburn J, Newman N, Gassmann A, Liu X, Schloss L, Weber E, Grzegory I, Bockowski M, Jun J, Suski T, et al. Structural Defects in Heteroepitaxial and Homoepitaxial GaN Mrs Proceedings. 395. DOI: 10.1557/Proc-395-351  0.524
1993 Chen Y, Zakharov ND, Werner P, Liliental‐Weber Z, Washburn J, Klem JF, Tsao JY. Structure and location of misfit dislocations in InGaAs epilayers grown on vicinal GaAs(001) substrates Applied Physics Letters. 62: 1536-1538. DOI: 10.1063/1.108632  0.492
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