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Tiezhong Ma, Ph.D. - Publications

Affiliations: 
2001 University of Minnesota, Twin Cities, Minneapolis, MN 
Area:
Inorganic Chemistry; Materials Chemistry
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6 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2015 Sun Z, Luo B, Liu Z, Huang L, Liu B, Ma T, Gao B, Liu ZH, Chen YF, Huang JH, Luo Z. Effect of perfluorotributylamine-enriched alginate on nucleus pulposus cell: Implications for intervertebral disc regeneration. Biomaterials. 82: 34-47. PMID 26741882 DOI: 10.1016/j.biomaterials.2015.12.013  0.319
2001 Campbell SA, Hoilien N, Ma T, Chen F, Smith R, Gladfelter W. Transistors built with ZrO2 and HfO2 deposited from nitratos Materials Research Society Symposium - Proceedings. 670: K421-K426. DOI: 10.1557/Proc-670-K4.2  0.506
2001 Ma T, Campbell SA, Smith R, Hoilien N, He B, Gladfelter WL, Hobbs C, Buchanan D, Taylor C, Gribelyuk M, Tiner M, Coppel M, Lee JJ. Group IVB metal oxides high permittivity gate insulators deposited from anhydrous metal nitrates Ieee Transactions On Electron Devices. 48: 2348-2356. DOI: 10.1109/16.954476  0.507
2000 Smith RC, Hoilien N, Taylor CJ, Ma T, Campbell SA, Roberts JT, Copel M, Buchanan DA, Gribelyuk M, Gladfelter WL. Low temperature chemical vapor deposition of ZrO2 on Si(100) using anhydrous zirconium(IV) nitrate Journal of the Electrochemical Society. 147: 3472-3476. DOI: 10.1149/1.1393922  0.529
2000 Smith RC, Ma T, Hoilien N, Tsung LY, Bevan MJ, Colombo L, Roberts J, Campbell SA, Gladfelter WL. Chemical vapour deposition of the oxides of titanium, zirconium and hafnium for use as high-k materials in microelectronic devices. A carbon-free precursor for the synthesis of hafnium dioxide Advanced Functional Materials. 10: 105-114. DOI: 10.1002/1099-0712(200005/10)10:3/5<105::Aid-Amo402>3.0.Co;2-J  0.522
1999 Campbell SA, Kim HS, Gilmer DC, He B, Ma T, Gladfelter WL. Titanium dioxide (TiO2)-based gate insulators Ibm Journal of Research and Development. 43: 383-392. DOI: 10.1147/Rd.433.0383  0.507
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