Year |
Citation |
Score |
2019 |
Kim HS. Optical and Electrical Study of InAs/GaSb Type II Strained Layer Superlattice for Mid-wave Infrared Detector Journal of the Korean Physical Society. 74: 358-362. DOI: 10.3938/Jkps.74.358 |
0.525 |
|
2018 |
Kim HS. White Light Emission from a Highly Flexible ZnS Composite Mixed with Polymer Composites Under the AC Electric Field Journal of the Korean Physical Society. 72: 551-554. DOI: 10.3938/Jkps.72.551 |
0.323 |
|
2016 |
Lee B, Kwak HM, Kim HS. Transmittance of long-wavelength infrared surface plasmon by hexagonal periodic metal hole arrays Proceedings of Spie. 9742. DOI: 10.1117/12.2213855 |
0.379 |
|
2015 |
Kim HS, Myers S, Klein B, Kazemi A, Krishna S, Kim JO, Lee SJ. Dark current improvement of the type-II InAs / GaSb superlattice photodetectors by using a gate bias control Journal of the Korean Physical Society. 66: 535-538. DOI: 10.3938/Jkps.66.535 |
0.76 |
|
2015 |
Hwang J, Jeon J, Yoon S, Kang BS, Kim DK, Kim HS, Kang SW, Kim JO, Jang WY, Urbas A, Ku Z, Lee SJ. Surface plasmon resonant splitting and merging due to infrared incidence through thermal imaging lens Electronics Letters. 51: 1170-1172. DOI: 10.1049/El.2015.0481 |
0.658 |
|
2014 |
Tian ZB, Godoy SE, Kim HS, Schuler-Sandy T, Montoya J, Krishna S. Mid-wave infrared interband cascade photodetectors and focal plane arrays Proceedings of Spie - the International Society For Optical Engineering. 9070. DOI: 10.1117/12.2049988 |
0.601 |
|
2014 |
Tian ZB, Godoy SE, Kim HS, Schuler-Sandy T, Montoya JA, Krishna S. High operating temperature interband cascade focal plane arrays Applied Physics Letters. 105. DOI: 10.1063/1.4892634 |
0.579 |
|
2013 |
Tian ZB, Schuler-Sandy T, Godoy SE, Kim HS, Krishna S. High-operating-temperature MWIR detectors using type II superlattices Proceedings of Spie - the International Society For Optical Engineering. 8867. DOI: 10.1117/12.2024587 |
0.601 |
|
2013 |
Tian ZB, Schuler-Sandy T, Godoy SE, Kim HS, Montoya J, Myers S, Klein B, Plis E, Krishna S. Quantum-engineered mid-infrared type-II InAs/GaSb superlattice photodetectors for high temperature operations Proceedings of Spie - the International Society For Optical Engineering. 8704. DOI: 10.1117/12.2016125 |
0.767 |
|
2013 |
Cellek OO, He Z, Lin Z, Kim HS, Liu S, Zhang Y. InAs/InAsSb type-II superlattice infrared nBn photodetectors and their potential for operation at high temperatures Proceedings of Spie. 8631. DOI: 10.1117/12.2007612 |
0.464 |
|
2013 |
Gautam N, Myers S, Barve AV, Klein B, Smith EP, Rhiger DR, Kim HS, Tian ZB, Krishna S. Barrier engineered infrared photodetectors based on type-ii inas/gasb strained layer superlattices Ieee Journal of Quantum Electronics. 49: 211-217. DOI: 10.1109/Jqe.2012.2236643 |
0.829 |
|
2012 |
Takei K, Madsen M, Fang H, Kapadia R, Chuang S, Kim HS, Liu CH, Plis E, Nah J, Krishna S, Chueh YL, Guo J, Javey A. Nanoscale InGaSb heterostructure membranes on Si substrates for high hole mobility transistors. Nano Letters. 12: 2060-6. PMID 22409386 DOI: 10.1021/Nl300228B |
0.572 |
|
2012 |
Cellek OO, Li H, Shen X, Lin Z, Steenbergen EH, Ding D, Liu S, Zhang Q, Kim HS, Fan J, DiNezza MJ, Dettlaff WHG, Webster PT, He Z, Li J, et al. InAs/InAsSb Type-II superlattice: a promising material for mid-wavelength and long-wavelength infrared applications Proceedings of Spie. 8353. DOI: 10.1117/12.925076 |
0.433 |
|
2012 |
Fang H, Chuang S, Takei K, Kim HS, Plis E, Liu CH, Krishna S, Chueh YL, Javey A. Ultrathin-body high-mobility InAsSb-on-insulator field-effect transistors Ieee Electron Device Letters. 33: 504-506. DOI: 10.1109/Led.2012.2185477 |
0.571 |
|
2012 |
Kim HS, Cellek OO, Lin ZY, He ZY, Zhao XH, Liu S, Li H, Zhang Y. Long-wave infrared nBn photodetectors based on InAs/InAsSb type-II superlattices Applied Physics Letters. 101: 161114. DOI: 10.1063/1.4760260 |
0.55 |
|
2011 |
Takei K, Fang H, Kumar SB, Kapadia R, Gao Q, Madsen M, Kim HS, Liu CH, Chueh YL, Plis E, Krishna S, Bechtel HA, Guo J, Javey A. Quantum confinement effects in nanoscale-thickness InAs membranes. Nano Letters. 11: 5008-12. PMID 22007924 DOI: 10.1021/Nl2030322 |
0.532 |
|
2011 |
Ford AC, Yeung CW, Chuang S, Kim HS, Plis E, Krishna S, Hu C, Javey A. Ultrathin body InAs tunneling field-effect transistors on Si substrates Applied Physics Letters. 98: 113105. DOI: 10.1063/1.3567021 |
0.571 |
|
2011 |
Fang H, Madsen M, Carraro C, Takei K, Kim HS, Plis E, Chen SY, Krishna S, Chueh YL, Maboudian R, Javey A. Strain engineering of epitaxially transferred, ultrathin layers of III-V semiconductor on insulator Applied Physics Letters. 98. DOI: 10.1063/1.3537963 |
0.545 |
|
2011 |
Gautam N, Kim H, Myers S, Plis E, Kutty M, Naydenkov M, Klein B, Dawson L, Krishna S. Heterojunction bandgap engineered photodetector based on type-II InAs/GaSb superlattice for single color and bicolor infrared detection Infrared Physics & Technology. 54: 273-277. DOI: 10.1016/J.Infrared.2010.12.028 |
0.81 |
|
2011 |
Plis E, Kutty M, Myers S, Kim H, Gautam N, Dawson L, Krishna S. Passivation of long-wave infrared InAs/GaSb strained layer superlattice detectors Infrared Physics & Technology. 54: 252-257. DOI: 10.1016/J.Infrared.2010.12.024 |
0.753 |
|
2010 |
Ko H, Takei K, Kapadia R, Chuang S, Fang H, Leu PW, Ganapathi K, Plis E, Kim HS, Chen SY, Madsen M, Ford AC, Chueh YL, Krishna S, Salahuddin S, et al. Ultrathin compound semiconductor on insulator layers for high-performance nanoscale transistors. Nature. 468: 286-9. PMID 21068839 DOI: 10.1038/Nature09541 |
0.583 |
|
2010 |
Myers SA, Khoshakhlagh A, Mailfert J, Wanninkhof P, Plis E, Kutty MN, Kim HS, Gautam N, Klein B, Smith EPG, Krishna S. Performance of InAsSb-based infrared detectors with nBn design Proceedings of Spie. 7808: 780805. DOI: 10.1117/12.862295 |
0.779 |
|
2010 |
Wong AF, Nelson MJ, Plis EA, Skrutskie MF, Yao L, Vandervelde T, Krishna S, Kim H, Khoshakhlagh A, Myers SA. Characterization of multicolor type-II InAs/GaSb strained-layer superlattice photodetectors for use in astronomical observation Proceedings of Spie - the International Society For Optical Engineering. 7742. DOI: 10.1117/12.857786 |
0.801 |
|
2010 |
Khoshakhlagh A, Myers S, Plis E, Kutty MN, Klein B, Gautam N, Kim H, Smith EPG, Rhiger D, Johnson SM, Krishna S. Mid-wavelength InAsSb detectors based on nBn design Proceedings of Spie. 7660. DOI: 10.1117/12.850428 |
0.791 |
|
2010 |
Montoya J, Barve A, Shenoi R, Naydenkov M, Kim H, Ku Z, Brueck SRJ, Krishna S, Lee SJ, Noh SK. Backside illuminated infrared detectors with plasmonic resonators Proceedings of Spie - the International Society For Optical Engineering. 7660. DOI: 10.1117/12.850382 |
0.78 |
|
2010 |
Kim HS, Plis E, Gautam N, Khoshakhlagh A, Myers S, Kutty MN, Sharma Y, Dawson LR, Krishna S. SU-8 passivation of type-II InAs/GaSb strained layer superlattice detectors Proceedings of Spie. 7660. DOI: 10.1117/12.850284 |
0.829 |
|
2010 |
Gautam N, Plis E, Kim HS, Kutty MN, Myers S, Khoshakhlagh A, Dawson LR, Krishna S. Heterostructure band engineering of type-II InAs/GaSb superlattice based longwave infrared photodiodes using unipolar current blocking barriers Proceedings of Spie. 7660. DOI: 10.1117/12.849889 |
0.816 |
|
2010 |
Plis E, Khoshakhlagh A, Myers S, Kim HS, Gautam N, Sharma YD, Krishna S, Lee SJ, Noh SK. Molecular beam epitaxy growth and characterization of type-II InAs/GaSb strained layer superlattices for long-wave infrared detection Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 28: C3G13-C3G18. DOI: 10.1116/1.3276429 |
0.819 |
|
2010 |
Khoshakhlagh A, Myers S, Kim H, Plis E, Gautam N, Lee SJ, Noh SK, Dawson LR, Krishna S. Long-Wave InAs/GaSb Superlattice Detectors Based on nBn and Pin Designs Ieee Journal of Quantum Electronics. 46: 959-964. DOI: 10.1109/Jqe.2010.2041635 |
0.835 |
|
2010 |
Plis E, Rodriguez JB, Balakrishnan G, Sharma YD, Kim HS, Rotter T, Krishna S. Mid-infrared InAs/GaSb strained layer superlattice detectors with nBn design grown on a GaAs substrate Semiconductor Science and Technology. 25: 085010. DOI: 10.1088/0268-1242/25/8/085010 |
0.676 |
|
2010 |
Gautam N, Kim HS, Kutty MN, Plis E, Dawson LR, Krishna S. Performance improvement of longwave infrared photodetector based on type-II InAs/GaSb superlattices using unipolar current blocking layers Applied Physics Letters. 96: 231107. DOI: 10.1063/1.3446967 |
0.787 |
|
2010 |
Myers S, Plis E, Kim HS, Khoshakhlagh A, Gautam N, Lee SJ, Noh SK, Krishna S. Heterostructure engineering in Type II InAs/GaSb strained layer superlattices Physica Status Solidi (C). 7: 2506-2509. DOI: 10.1002/Pssc.200983869 |
0.817 |
|
2009 |
Kim HS, Plis E, Myers S, Khoshakhlagh A, Gautam N, Kutty MN, Sharma YD, Dawson LR, Krishna S. Improved performance of InAs/GaSb strained layer superlattice detectors with SU-8 passivation Proceedings of Spie. 7467. DOI: 10.1117/12.826775 |
0.823 |
|
2009 |
Khoshakhlagh A, Kim HS, Myers S, Gautam N, Lee SJ, Plis E, Noh SK, Dawson LR, Krishna S. Long wavelength InAs/GaSb superlattice detectors based on nBn and pin design Proceedings of Spie. 7298. DOI: 10.1117/12.818419 |
0.819 |
|
2009 |
Myers S, Plis E, Khoshakhlagh A, Kim HS, Sharma Y, Dawson R, Krishna S, Gin A. The effect of absorber doping on electrical and optical properties of nBn based type-II InAs/GaSb strained layer superlattice infrared detectors Applied Physics Letters. 95: 121110. DOI: 10.1063/1.3230069 |
0.829 |
|
2009 |
Plis E, Myers S, Khoshakhlagh A, Kim HS, Sharma Y, Gautam N, Dawson R, Krishna S. InAs/GaSb strained layer superlattice detectors with nBn design Infrared Physics & Technology. 52: 335-339. DOI: 10.1016/J.Infrared.2009.09.008 |
0.84 |
|
2008 |
Bishop G, Plis E, Rodriguez JB, Sharma YD, Kim HS, Dawson LR, Krishna S. nBn detectors based on InAs∕GaSb type-II strain layer superlattice Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 26: 1145. DOI: 10.1116/1.2830627 |
0.694 |
|
2008 |
Plis E, Kim HS, Bishop G, Krishna S, Banerjee K, Ghosh S. Lateral diffusion of minority carriers in nBn based type-II InAs/GaSb strained layer superlattice detectors Applied Physics Letters. 93. DOI: 10.1063/1.2990049 |
0.578 |
|
2008 |
Kim HS, Plis E, Rodriguez JB, Bishop GD, Sharma YD, Dawson LR, Krishna S, Bundas J, Cook R, Burrows D, Dennis R, Patnaude K, Reisinger A, Sundaram M. Mid-IR focal plane array based on type-II InAs∕GaSb strain layer superlattice detector with nBn design Applied Physics Letters. 92: 183502. DOI: 10.1063/1.2920764 |
0.674 |
|
2008 |
Kim HS, Plis E, Rodriguez JB, Bishop G, Sharma YD, Krishna S. N-type ohmic contact on type-II InAs/GaSb strained layer superlattices Electronics Letters. 44: 881-882. DOI: 10.1049/El:20081294 |
0.502 |
|
2007 |
Khoshakhlagh A, Rodriguez JB, Plis E, Bishop GD, Sharma YD, Kim HS, Dawson LR, Krishna S. Bias dependent dual band response from InAs∕Ga(In)Sb type II strain layer superlattice detectors Applied Physics Letters. 91: 263504. DOI: 10.1063/1.2824819 |
0.795 |
|
2007 |
Plis E, Rodriguez JB, Kim HS, Bishop G, Sharma YD, Dawson LR, Krishna S, Lee SJ, Jones CE, Gopal V. Type II InAs∕GaSb strain layer superlattice detectors with p-on-n polarity Applied Physics Letters. 91: 133512. DOI: 10.1063/1.2790078 |
0.613 |
|
2007 |
Rodriguez JB, Plis E, Bishop G, Sharma YD, Kim H, Dawson LR, Krishna S. nBn structure based on InAs∕GaSb type-II strained layer superlattices Applied Physics Letters. 91: 043514. DOI: 10.1063/1.2760153 |
0.651 |
|
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